CN110676350B - Method for judging stability of black silicon texturing process and manufacturing method of solar cell - Google Patents
Method for judging stability of black silicon texturing process and manufacturing method of solar cell Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 103
- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 87
- 230000008569 process Effects 0.000 title claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000003672 processing method Methods 0.000 title description 2
- 238000002310 reflectometry Methods 0.000 claims abstract description 46
- 235000012431 wafers Nutrition 0.000 claims abstract description 33
- 239000011248 coating agent Substances 0.000 claims abstract description 20
- 238000000576 coating method Methods 0.000 claims abstract description 20
- 238000012360 testing method Methods 0.000 claims abstract description 16
- 238000004458 analytical method Methods 0.000 claims abstract description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 239000007888 film coating Substances 0.000 claims description 4
- 238000009501 film coating Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052710 silicon Inorganic materials 0.000 abstract description 13
- 239000010703 silicon Substances 0.000 abstract description 13
- 230000008439 repair process Effects 0.000 abstract description 3
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
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- 238000001020 plasma etching Methods 0.000 description 3
- 239000003086 colorant Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(I) nitrate Inorganic materials [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
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- 230000003197 catalytic effect Effects 0.000 description 1
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- 238000012544 monitoring process Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
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Abstract
The invention relates to the technical field of solar cells, and particularly discloses a method for judging the stability of a black silicon texturing process and a manufacturing method of a solar cell. The method comprises the following steps: taking black silicon sample wafers which are subjected to texturing at different time points, and testing the reflectivity; judging whether the reflectivity is within the range of the preset reflectivity, if so, entering the next step, otherwise, adjusting the texturing process and then entering the previous step; selecting a black silicon sample wafer with the reflectivity difference value within a preset reflectivity difference value range, and coating; and performing color difference analysis, if the color difference is within a preset color difference range, judging that the texturing process is stable between different time points, and if not, adjusting the texturing process and then entering the step of testing the reflectivity. The method provided by the invention has the advantages of simple process, convenience and rapidness, can quickly reflect the change of the texture surface on the surface of the silicon wafer, timely adjusts the texturing process, effectively reduces the color difference reject ratio of the component product, reduces the repair rate of the component, and saves the production cost.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a method for judging the stability of a black silicon texturing process and a manufacturing method of a solar cell.
Background
The black silicon is a novel electronic material which can greatly improve the photoelectric conversion efficiency and is widely applied to the manufacture of solar cells. The preparation method of the black silicon is mainly divided into a dry method and a wet method. The dry black silicon technology, namely the Reactive Ion Etching (RIE), can significantly reduce the reflectivity and improve the surface optical characteristics, but the RIE still has the problems of poor safety, complex process, high upgrading cost and the like in the production and application process. Therefore, the wet black silicon technology based on the metal catalytic chemical corrosion technology is more widely applied to the solar industrial production.
The wet black silicon technology is to utilize AgNO3Medium Ag/Ag+The system energy is far lower than the valence band of silicon, so that Ag in the solution+Obtaining valence band electrons of silicon, reducing the electrons obtained from Si-Si bonds on the surface of the silicon to form silver simple substance particles, and depositing the silver simple substance particles on the surface of the silicon wafer. Then, using H2O2the/HF corrosion system accelerates the reaction with silicon around Ag, and as the reaction proceeds, the silicon under the silver particles is continuously corroded, and the silver particles continuously move downwards to finally form nanowires with certain lengths. The nanowires and the embedded silver particles cannot meet the requirements of preparing the black silicon battery, and the surface effect of the nanowires and the silver metal particles can cause strong recombination, so that the silver particles need to be removed and certain surface etching modification needs to be carried out on the nanowire structure in the wet black silicon preparation process so as to reduce the recombination and improve the battery efficiency.
The wet black silicon technology uses chemical liquid medicine and additives, the reaction process is complex, the liquid medicine has a reaction period, the process is easy to fluctuate, the texture of the textured silicon wafer after texturing is easily affected, the appearance and the size of the texture are not easy to control, and the efficiency and the appearance of the battery are affected. Therefore, under the condition of monitoring the reflectivity, the surface structure of the silicon wafer still needs to be monitored and the technological process needs to be adjusted, so that the problems that the types of produced solar cell color difference pieces are increased and the color difference reject ratio of subsequent component products is increased are solved, and the production cost is reduced. Although the microstructure of the texture surface of the silicon wafer can be observed by a Scanning Electron Microscope (SEM) testing method, the method needs to send a sampled sample to a special detection department, and the sample is sampled and measured by professional personnel, so that the method has the disadvantages of long time consumption, complex process and incapability of timely reflecting the process fluctuation condition in the black silicon texture surface making process.
Disclosure of Invention
Aiming at the problems in the existing wet black silicon technology, the invention provides a method for judging the stability of a black silicon texturing process and a manufacturing method of a solar cell.
In order to achieve the purpose of the invention, the embodiment of the invention adopts the following technical scheme:
the method for judging the stability of the black silicon texturing process comprises the following steps:
s1: taking black silicon sample wafers which are subjected to texturing at different time points under the same texturing process, and carrying out reflectivity test;
s2: judging whether the reflectivity is within a preset reflectivity range, if so, entering step S3, otherwise, adjusting the texturing process and then entering step S1;
s3: selecting a black silicon sample wafer with the reflectivity difference value within a preset reflectivity difference value range, and performing film coating treatment;
s4: and performing color difference analysis on the coated black silicon sample, if the color difference is within a preset color difference range, judging that the texturing process is stable between different time points, and if not, adjusting the texturing process and then entering the step S1.
Compared with the prior art, the method for judging the stability of the black silicon texturing process provided by the invention has the advantages of simple process, convenient operation and short time consumption, a plurality of silicon wafers which are subjected to texturing at different time points in the service cycle of the same batch of liquid medicine under the same texturing process are taken as reserved black silicon sample wafers, whether the process is stable or not is monitored through a reflectivity test, then the black silicon sample wafers with the reflectivity difference value within the range of the preset reflectivity difference value are selected, film coating treatment is directly carried out, whether the colors of the coated black silicon sample wafers are different or not is observed, microscopic changes of the black silicon texturing surface are directly detected from the appearance, the selection of different time points can be known according to experience about the service life (initial stage, middle stage and later stage) of a certain liquid medicine, the black silicon sample wafers can be respectively selected at the initial stage and the middle stage of use, so as to judge the stability from the initial stage to the middle stage, and if the process is stable, the black, stability from the middle to the end was judged.
The black silicon texturing process is adjusted in time to reduce the problems that the color sorting is complicated, errors are prone to occurring and the like due to the fact that the types of the produced solar cell color difference pieces are increased, so that the color difference reject ratio of subsequent component products is reduced, and further the production cost is reduced.
Furthermore, the preset reflectivity is 15-19%, the optical characteristics of the battery are improved, and the light absorption capacity of the battery is ensured.
Further, in step S3, the preset reflectivity difference is 0-1%, so that the reflectivity difference of different silicon wafers is reduced, and the accuracy of the chromatic aberration analysis is improved.
Further, in step S4, the preset color difference is 0-1.5NBS, so as to ensure that small color differences exist in different batches of black silicon sample wafers, facilitate control of the appearance and size of the black silicon texture, and ensure the appearance and efficiency of the battery.
Further, the coating treatment adopts a Plasma Enhanced Chemical Vapor Deposition (PECVD) method to form a coating on the surface of the black silicon sample wafer.
Further, the coating film is a silicon nitride coating film.
The invention also provides a manufacturing method of the black silicon solar cell, which comprises the method for judging the stability of the black silicon texturing process and also comprises the step of selecting the black silicon sheet prepared under the stable process condition for manufacturing the solar cell.
According to the manufacturing method of the black silicon solar cell, the texturing surface of the black silicon is inspected, the texturing process is adjusted in time, the appearance and the size of the black silicon texturing surface are controlled, the increase of the types of the solar cell color difference pieces is reduced, the color difference reject ratio of a component product is effectively reduced, the component repair rate caused by color difference is reduced, and therefore the production cost is reduced.
Drawings
FIG. 1 is an external view of a black silicon-like wafer before coating in an embodiment of the present invention;
FIG. 2 is an external view of a coated black silicon wafer according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1
A method for judging the stability of a black silicon texturing process comprises the following steps:
s1: taking reserved black silicon sample wafers which are subjected to texturing in different time points in the middle and later periods of the use period of the liquid medicine under the same texturing process, and carrying out reflectivity test;
s2: screening two groups of black silicon sample wafers (shown in figure 1) with the reflectivity within a preset reflectivity range, wherein the reflectivity is respectively 15% and 16%, and carrying out silicon nitride coating by adopting PECVD (plasma enhanced chemical vapor deposition);
s3: and (3) performing color difference analysis on the coated black silicon sample, wherein the result is shown in fig. 2, the color of the black silicon sample is different after the silicon nitride coating, the color difference is more than 1.5NBS, the fluctuation of the black silicon texturing process is rapidly judged, the texturing process is timely adjusted (the liquid medicine is supplemented or replaced or the reaction time is adjusted), and the steps are repeated until the process is stable.
A manufacturing method of a black silicon solar cell is characterized in that a black silicon sheet prepared under a stable process condition is used for manufacturing the solar cell, and the solar cell is prepared through diffusion, wet etching, PECVD, printing test and color sorting processes.
Example 2
A method for judging the stability of a black silicon texturing process comprises the following steps:
s1: taking reserved black silicon sample wafers which are subjected to texturing in different time points in the middle and later periods of the use period of the liquid medicine under the same texturing process, and carrying out reflectivity test;
s2: screening three groups of black silicon sample wafers with the reflectivity within a preset reflectivity range, wherein the reflectivities are respectively 18%, 19% and 18%, and carrying out silicon nitride coating by adopting PECVD (plasma enhanced chemical vapor deposition);
s3: and performing color difference analysis on the coated black silicon sample, wherein the color of the black silicon sample is basically consistent after the coating of the silicon nitride, and the color difference is 0.5NBS, which indicates that the texturing process is stable in different time periods.
A manufacturing method of a black silicon solar cell is characterized in that a black silicon sheet prepared under a stable process condition is used for manufacturing the solar cell, and the solar cell is prepared through diffusion, wet etching, PECVD, printing test and color sorting processes.
Example 3
A method for judging the stability of a black silicon texturing process comprises the following steps:
s1: taking reserved black silicon sample wafers which are subjected to texturing in different time points in the middle and later periods of the use period of the liquid medicine under the same texturing process, and carrying out reflectivity test;
s2: screening three groups of black silicon sample wafers with the reflectivity within a preset reflectivity range, wherein the reflectivities are respectively 17%, 18% and 17%, and carrying out silicon nitride coating by adopting PECVD (plasma enhanced chemical vapor deposition);
s3: and performing color difference analysis on the coated black silicon sample, wherein the color of the black silicon sample is basically consistent after the coating of the silicon nitride, and the color difference is 0.3NBS, which indicates that the texturing process is stable in different time periods.
A manufacturing method of a black silicon solar cell is characterized in that a black silicon sheet prepared under a stable process condition is used for manufacturing the solar cell, and the solar cell is prepared through diffusion, wet etching, PECVD, printing test and color sorting processes.
Example 4
A method for judging the stability of a black silicon texturing process comprises the following steps:
s1: taking reserved black silicon sample wafers which are subjected to the texturing at different time points in the early stage, the middle stage and the later stage of the use period of the liquid medicine under the same texturing process, and carrying out reflectivity test;
s2: screening three groups of black silicon sample wafers with the reflectivity within the preset reflectivity range in different periods, wherein the reflectivity is respectively 19%, 19% and 18%, and carrying out silicon nitride coating by adopting PECVD (plasma enhanced chemical vapor deposition);
s3: and performing color difference analysis on the coated black silicon sample, wherein the color of the black silicon sample is basically consistent after the coating of the silicon nitride, and the color difference is 1.5NBS, which indicates that the texturing process is stable in different periods.
A manufacturing method of a black silicon solar cell is characterized in that a black silicon sheet prepared under a stable process condition is used for manufacturing the solar cell, and the solar cell is prepared through diffusion, wet etching, PECVD, printing test and color sorting processes.
Example 5
A method for judging the stability of a black silicon texturing process comprises the following steps:
s1: taking reserved black silicon sample wafers which are subjected to texturing in different time points in the middle and later periods of the use period of the liquid medicine under the same texturing process, and carrying out reflectivity test;
s2: screening three groups of black silicon sample wafers with the reflectivity within a preset reflectivity range, wherein the reflectivities are respectively 18%, 18% and 19%, and performing silicon nitride coating by adopting PECVD (plasma enhanced chemical vapor deposition);
s3: and performing color difference analysis on the coated black silicon sample, wherein the color of the black silicon sample is basically consistent after the coating of the silicon nitride, and the color difference is 1.0NBS, which indicates that the texturing process is stable in different periods.
A manufacturing method of a black silicon solar cell is characterized in that a black silicon sheet prepared under a stable process condition is used for manufacturing the solar cell, and the solar cell is prepared through diffusion, wet etching, PECVD, printing test and color sorting processes.
In order to better illustrate the characteristics of the method for judging the stability of the black silicon texturing process, data statistics is carried out on the dominant color system ratio, the chromatic aberration component ratio and the battery efficiency of the solar battery prepared by adopting the method: the dominant color system accounts for 65 percent, which is improved by 15 percent compared with the method before the method is used; the color difference component accounts for 0.2 percent, is reduced by 0.1 percent compared with the method before the method is used, the photoelectric conversion efficiency of the battery is 18 to 20 percent, is improved by 0.05 percent compared with the method before the method is used, and the efficiency is more concentrated.
According to the embodiment, the method for judging the stability of the black silicon texturing process provided by the invention does not need to invest extra funds to purchase scanning electron microscope equipment, saves the funds, is convenient and quick, can quickly reflect the change of the texture surface on the surface of the silicon wafer, avoids various colors of the appearance of the finished battery, reduces the color sorting difficulty and the component repair rate caused by chromatic aberration, saves the production cost, ensures the appearance of the battery and improves the battery efficiency.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents or improvements made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (4)
1. The method for judging the stability of the black silicon texturing process is characterized by comprising the following steps of: the method comprises the following steps:
s1: taking black silicon sample wafers which are subjected to texturing at different time points under the same texturing process, and carrying out reflectivity test;
s2: judging whether the reflectivity is within a preset reflectivity range, if so, entering a step S3, otherwise, adjusting a texturing process and then entering a step S1, wherein the preset reflectivity is 15-19%;
s3: selecting a black silicon sample with a reflectivity difference value within a preset reflectivity difference value range, and performing film coating treatment under the same film coating condition, wherein the preset reflectivity difference value is 0-1%;
s4: and performing color difference analysis on the coated black silicon sample, if the color difference is within a preset color difference range, judging that the texturing process is stable between different time points, otherwise, adjusting the texturing process and then entering the step S1, wherein the preset color difference is 0-1.5 NBS.
2. The method of determining the stability of the black silicon texturing process as claimed in claim 1, wherein: and the coating treatment adopts a plasma enhanced chemical vapor deposition method to form a coating on the surface of the black silicon sample.
3. The method of determining the stability of the black silicon texturing process as claimed in claim 2, wherein: the coating film is a silicon nitride coating film.
4. The manufacturing method of the black silicon solar cell is characterized by comprising the following steps: the method for judging the stability of the black silicon texturing process according to any one of claims 1 to 3, under which black silicon wafers are prepared, the texturing process conditions under which the texturing process is stable are obtained, the black silicon wafers being used for manufacturing solar cells.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2101358A2 (en) * | 2008-03-13 | 2009-09-16 | Samsung Electronics Co., Ltd. | Method of maunfacturing photoelectric device |
| JP2014187165A (en) * | 2013-03-22 | 2014-10-02 | Mitsubishi Electric Corp | Method and device for manufacturing solar cell |
| CN106683981A (en) * | 2016-12-30 | 2017-05-17 | 中建材浚鑫科技股份有限公司 | Cleaning method for texturing of poly-silicon wafer |
| CN108470695A (en) * | 2018-03-16 | 2018-08-31 | 英利能源（中国）有限公司 | A method of making black silicon solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2101358A2 (en) * | 2008-03-13 | 2009-09-16 | Samsung Electronics Co., Ltd. | Method of maunfacturing photoelectric device |
| JP2014187165A (en) * | 2013-03-22 | 2014-10-02 | Mitsubishi Electric Corp | Method and device for manufacturing solar cell |
| CN106683981A (en) * | 2016-12-30 | 2017-05-17 | 中建材浚鑫科技股份有限公司 | Cleaning method for texturing of poly-silicon wafer |
| CN108470695A (en) * | 2018-03-16 | 2018-08-31 | 英利能源（中国）有限公司 | A method of making black silicon solar cell |
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