CN110676344B - Double-response GaN ultraviolet detector and preparation method thereof - Google Patents

Double-response GaN ultraviolet detector and preparation method thereof Download PDF

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CN110676344B
CN110676344B CN201910869396.6A CN201910869396A CN110676344B CN 110676344 B CN110676344 B CN 110676344B CN 201910869396 A CN201910869396 A CN 201910869396A CN 110676344 B CN110676344 B CN 110676344B
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CN110676344A (en
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仇志军
叶怀宇
张国旗
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Southwest University of Science and Technology
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Shenzhen Third Generation Semiconductor Research Institute
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
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Abstract

The invention discloses a double-response GaN ultraviolet detectionA device and a method for making the same, comprising: 1) sequentially growing a GaN buffer layer and an n-type doped GaN layer on the substrate; 2) growing m layers of intrinsic doped In with different In components on the n-type doped GaN layerxGa1‑xN structure, wherein m is more than or equal to 3; 3) the m layers of different In components are doped with InxGa1‑xGrowing a p-type doped GaN layer on the N structure; 4) etching the p-type doped GaN layer and the m layer of intrinsic doped In with different In componentsxGa1‑xN layers; 5) depositing a passivation layer; 6) and etching the passivation layer and depositing a metal electrode. The GaN detector is a PIN structure detector, and can realize rapid, accurate and high-sensitivity ultraviolet detection; secondly, the detector of the invention can emit white light indicating signals while outputting photoelectric signals, thereby realizing detection prompt visible to human eyes and optical signal measurement.

Description

Double-response GaN ultraviolet detector and preparation method thereof
Technical Field
The invention relates to the field of semiconductor photoelectric devices, in particular to a double-response GaN ultraviolet detector and a preparation method thereof.
Background
The traditional ultraviolet detector has the working principle that after photoelectric materials absorb external ultraviolet light, photo-generated electron pairs are generated in the materials, and photo-generated voltage or photo-current signals are output under the action of built-in potential or scanning bias voltage, but the photo-generated signals can be read out by professional semiconductor analysis equipment or a signal processing circuit at the rear end, and then information such as ultraviolet radiation intensity and the like can be finally obtained. However, with the development of demand and the popularization of detectors, for many simple tests, only the external ultraviolet light intensity needs to be known schematically, and complicated circuit structures or devices are not needed for optical signal detection. Therefore, ultraviolet detectors with novel structures are required to meet the requirements of accurate, rapid and high-sensitivity optical signal detection and simple qualitative tests, and the strength information of optical signals of people can be indicated through some information visible to the naked eyes.
Disclosure of Invention
Based on the development requirements, the invention innovatively provides the double-response GaN ultraviolet detector and the preparation method thereof, which not only can meet the requirement of accurate, rapid and high-sensitivity ultraviolet detection, but also can simply and conveniently realize the intensity display of optical signals visible to human eyes.
The method comprises the following steps:
1) sequentially growing a GaN buffer layer and an n-type doped GaN layer on the substrate;
2) growing m layers of intrinsic doped In with different In components on the n-type doped GaN layerxGa1-xN structure, wherein m is more than or equal to 3, InxGa1-xIn the N structure, the In component x is 0.38-0.4, 0.27-0.3 and 0.07-0.1 In sequence;
3) the m layers of different In components are doped with InxGa1-xGrowing a p-type doped GaN layer on the N structure;
4) etching the p-type doped GaN layer and the m layer of intrinsic doped In with different In componentsxGa1-xN layers; (ii) a
5) Depositing a passivation layer;
6) and etching the passivation layer and depositing a metal electrode.
Preferably, the thickness of the GaN buffer layer in the step 1) is 0.2-4 μm.
Preferably, the thickness of the n-type doped GaN layer in the step 1) is 0.25-1 μm, and the doping concentration is 1 × 1018cm-3～5×1018cm-3The doping element is silicon.
Preferably, the m layers In 2) are doped with different In componentsxGa1-xThe thickness of the N structure is 0.1-1 μm.
Preferably, in 2), m is 3; the 3 layers of InxGa1-xIn the N structure, the In component x is 0.38-0.4, 0.27-0.3 and 0.07-0.1 In sequence, and the thickness of each layer is 30-300 nm.
Preferably, the thickness of the p-type doped GaN layer in the step 3) is 0.5-2.5 μm.
Preferably, the p-type doping concentration in the 3) is 1 × 1018cm-3～5×1018cm-3The doping element is magnesium.
Preferably, the thickness of the passivation layer in the step 5) is 20nm to 200 nm; the passivation layer is made of aluminum oxide.
The GaN-based light-emitting device prepared by the method is a double-response GaN ultraviolet detector.
When the p-type GaN layer absorbs ultraviolet photons, a large number of photo-generated electron pairs are formed In vivo, the photo-generated carrier pairs are separated under the action of an internal electric field, and then a large number of photo-generated carriers are injected into InxGa1-xN layer, and part of the injected photon-generated carriers are InxGa1-xThe N layers are subjected to transition recombination directly, and photons are emitted simultaneously. Because of the different In composition InxGa1-xThe N layers have different forbidden band widths and emit different lights, especially when the In component is 0.38-0.4, 0.27-0.3, and 0.07-0.1 In sequencexGa1-xPhotons emitted by direct transition in the N material are respectively red light (-630 nm), green light (-520 nm) and blue light (-400 nm), and when the light of the three colors is output simultaneously, the light can be converged into natural white light, so that the light can be used as a dual-response GaN ultraviolet detector. The traditional PN structure detector only measures an electric signal, and the detector can emit visible light except the electric signal, namely, the detector also has optical signal response except the electric signal response, so that the detector is a double-response ultraviolet detector. In addition, the detector is structurally a PIN structure, photogenerated carriers can be rapidly separated and accumulated at the two ends of P, N, a photogenerated voltage effect is generated, and the wide bandgap material has low dark current, so that the detector can achieve rapid and high-sensitivity light detection.
The invention has the advantages that:
A. the invention adopts a multilayer structure with different In components to obtain composite light which can be used for ultraviolet ray detection.
B. The specific In component multilayer structure of the invention respectively obtains red light, green light and blue light, and white light formed by compounding is enhanced along with the enhancement of the intensity of the blue light.
C. The double-response ultraviolet detector can simplify measuring equipment or a reading circuit, and simply and portably realizes visible ultraviolet detection for human eyes.
D. The ultraviolet detector is structurally a PIN photovoltaic detector, so that the ultraviolet detector has the characteristics of rapidness, accuracy and high sensitivity in photoelectric response.
E. The ultraviolet detector of the invention can simplify the measuring equipment in the field of qualitative measurement or detection, is convenient to use and is beneficial to the miniaturization of a system.
Drawings
In order to make the object, technical scheme and beneficial effect of the invention more clear, the invention provides the following drawings for explanation:
fig. 1 is a schematic diagram of the physical energy band structure of the present invention.
Fig. 2 is a schematic diagram of a two-dimensional cross-sectional structure according to the present invention.
Fig. 3, 4 and 5 are flow charts of the preparation process of the invention.
In FIG. 1, VBE-the valence band energy level, CBE-the conduction band energy level.
In FIG. 2, a sapphire substrate 1, a GaN buffer layer 2, an n-type doped GaN layer 3, and intrinsic doped InxGa1-xN layers 4, 5 and 6, a p-type doped GaN layer 7, an aluminum oxide passivation layer 8, a first metal electrode 9 and a second metal electrode 10.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
The embodiment provides a method for manufacturing a dual-response GaN ultraviolet detector, as shown in fig. 3, including:
1) the sapphire substrate was sampled and its surface was pretreated with a concentrated phosphoric acid solution.
2) Epitaxially growing a 2 μm GaN buffer layer 2 with a doping concentration of 1 × 10 and a 0.25 μm layer on the sapphire substrate18cm-3The n-type GaN layer 3,0.3 μm intrinsically doped In with an In composition of 0.38xGa1-xN layer 4, 0.3 μm intrinsic doped In with In composition of 0.27xGa1-xN layer 5, 0.3 μm intrinsic doped In with In composition of 0.07xGa1-xN layer 6 with 1 μm doping concentration of 1 × 1018cm-3P-type GaN layer 7;
3) and selectively etching the epitaxial material by using an Inductively Coupled Plasma (ICP) etching device and combining an etching mask to form an etching step and a mesa, wherein the etching depth of the step reaches the n-type doped GaN layer 3.
4) Depositing 20nm thick aluminum oxide (Al) on clean etch steps and mesas using Atomic Layer Deposition (ALD) equipment2O3) Layer 8.
5) And etching an upper electrode hole and a lower electrode hole in the aluminum oxide dielectric layer 8 by photoetching and selective etching processes.
6) And depositing a metal electrode by utilizing photoetching and metal evaporation technology, and ensuring that the first metal electrode 9 forms good ohmic contact with the p-type GaN layer 7 and the second metal electrode 10 forms good ohmic contact with the n-type GaN layer 3 by proper annealing process and metal material selection.
The energy band structure schematic diagram of the prepared detector is shown in fig. 1, the forbidden band width of the p-type GaN layer is 3.4eV, and the p-type GaN layer can absorb ultraviolet light with the wavelength shorter than 280 nm.
The present embodiment also provides a dual-response GaN ultraviolet detector, the cross-section of which is shown In FIG. 2, and the detector comprises a sapphire substrate 1, a GaN buffer layer 2, an n-type doped GaN layer 3, and intrinsic doped InxGa1-xN layers 4, 5 and 6, a p-type doped GaN layer 7, an aluminum oxide passivation layer 8, a first metal electrode 9 and a second metal electrode 10.
Example 2
The embodiment provides another method for manufacturing a dual-response GaN ultraviolet detector, as shown in fig. 4, including:
1) the sapphire substrate was sampled and its surface was pretreated with a concentrated phosphoric acid solution.
2) Epitaxially growing a 3 μm GaN buffer layer 2 with a doping concentration of 2.5 × 10 and a 0.5 μm on the sapphire substrate18cm-3N-type GaN layer 3, 0.45 μm In composition of 0.39 intrinsic doped InxGa1-xN layer 4, 0.45 μm intrinsic doped In with In composition of 0.28xGa1-xN layer 5, 0.45 μm intrinsic doped In with In composition of 0.08xGa1-xN layer 6, 1.25 μm doping concentration 1.5 × 1018cm-3P-type GaN layer 7;
3) and selectively etching the epitaxial material by using an Inductively Coupled Plasma (ICP) etching device and combining an etching mask to form an etching step and a mesa, wherein the etching depth of the step reaches the n-type doped GaN layer 3.
4) Depositing 40nm thick aluminum oxide (Al) on clean etch steps and mesas using Atomic Layer Deposition (ALD) equipment2O3) Layer 8.
5) And etching an upper electrode hole and a lower electrode hole in the aluminum oxide dielectric layer 8 by photoetching and selective etching processes.
6) And depositing a metal electrode by utilizing photoetching and metal evaporation technology, and ensuring that the first metal electrode 9 forms good ohmic contact with the p-type GaN layer 7 and the second metal electrode 10 forms good ohmic contact with the n-type GaN layer 3 by proper annealing process and metal material selection.
Example 3
The embodiment provides another method for manufacturing a dual-response GaN ultraviolet detector, as shown in fig. 5, including:
1) the sapphire substrate was sampled and its surface was pretreated with a concentrated phosphoric acid solution.
2) Epitaxially growing a 4 μm GaN buffer layer 2 with a doping concentration of 5 × 10 and a doping concentration of 0.75 μm on a sapphire substrate18cm-3N-type GaN layer 3, 0.6 μm In composition of 0.4 intrinsic doped InxGa1-xN layer 4, 0.6 μm In composition 0.3 intrinsic doped InxGa1-xN layer 5, 0.6 μm In composition 0.1 intrinsic doped InxGa1-xN layer 6, 1.5 μm doping concentration of 2 × 1018cm-3P-type GaN layer 7;
3) and selectively etching the epitaxial material by using an Inductively Coupled Plasma (ICP) etching device and combining an etching mask to form an etching step and a mesa, wherein the etching depth of the step reaches the n-type doped GaN layer 3.
4) Depositing 80nm thick aluminum oxide (Al) on clean etch steps and mesas using Atomic Layer Deposition (ALD) equipment2O3) Layer 8.
5) And etching an upper electrode hole and a lower electrode hole in the aluminum oxide dielectric layer 8 by photoetching and selective etching processes.
6) And depositing a metal electrode by utilizing photoetching and metal evaporation technology, and ensuring that the first metal electrode 9 forms good ohmic contact with the p-type GaN layer 7 and the second metal electrode 10 forms good ohmic contact with the n-type GaN layer 3 by proper annealing process and metal material selection.
Examples 1-3 were carried out by inserting three layers of In of different compositions In the middle of the junction based on the conventional GaN PN junctionxGa1-xAn N intrinsic material. In is caused due to the addition of InxGa1-xThe forbidden bandwidth of the N material is narrowed. By selecting the appropriate In composition, red, green and blue light emissions can be achieved, resulting In a visible white light. Therefore, under the condition of ultraviolet irradiation, the device structure can provide a photovoltage or photocurrent signal for measurement and can emit visible light for prompting, and particularly under the condition of insufficient illumination or at night, the ultraviolet source can be obviously known.
Finally, it is noted that the above-mentioned preferred embodiments illustrate rather than limit the invention, and that, although the invention has been described in detail with reference to the above-mentioned preferred embodiments, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the invention as defined by the appended claims.

Claims (9)

1. A preparation method of a double-response GaN ultraviolet detector is characterized by comprising the following steps: comprises that
1) Sequentially growing a GaN buffer layer and an n-type doped GaN layer on the substrate;
2) growing m layers of intrinsic doped In with different In components on the n-type doped GaN layerxGa1-xN structure, wherein m is more than or equal to 3, InxGa1-xIn the N structure, the In component x is 0.38-0.4, 0.27-0.3 and 0.07-0.1 In sequence;
3) the m layers of different In components are doped with InxGa1-xGrowing a p-type doped GaN layer on the N structure;
4) etching the p-type doped GaN layer and the m layer of intrinsic doped In with different In componentsxGa1-xN layers;
5) depositing a passivation layer;
6) and etching the passivation layer and depositing a metal electrode.
2. The method of claim 1, wherein: the thickness of the GaN buffer layer in the step 1) is 0.2 mm-4 mm.
3. The method of claim 1, wherein: the thickness of the n-type doped GaN layer in the step 1) is 0.25 mm-1 mm, and the doping concentration is 1 multiplied by 1018 cm-3 ~ 5×1018 cm-3The doping element is silicon.
4. The method of claim 1, wherein: the m layers of different In compositions In 2) are doped with InxGa1-xThe thickness of the N structure is 0.1 mm-1 mm.
5. The method of claim 1, wherein: in the 2), m is 3; the 3 layers of InxGa1-xThe thickness of each layer of the N structure is the same and is 30 nm-300 nm.
6. The method for preparing a dual-response GaN ultraviolet detector as recited in claim 1, wherein: the thickness of the p-type doped GaN layer in the step 3) is 0.5 mm-2.5 mm.
7. Root of Kentucky BetulaeThe preparation method of the double-response GaN ultraviolet detector in the claim 1 is characterized by comprising the following steps: the p-type doping concentration in the step 3) is 1 multiplied by 1018 cm-3 ~ 5×1018 cm-3The doping element is magnesium.
8. The method for preparing a dual-response GaN ultraviolet detector as recited in claim 1, wherein: the thickness of the passivation layer in the step 5) is 20 nm-200 nm; the passivation layer is made of aluminum oxide.
9. A dual response GaN ultraviolet detector made according to the method of any of claims 1-8.
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CN102386269A (en) * 2011-11-30 2012-03-21 清华大学 GaN-based ultraviolet detector with p-i-p-i-n structure and preparation method thereof
CN102593233A (en) * 2012-03-19 2012-07-18 中国科学院上海技术物理研究所 Gallium nitride (GaN) based personal identification number (PIN) detector based on imaging sapphire substrate and preparation method
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CN100454585C (en) * 2004-09-10 2009-01-21 中国科学院半导体研究所 Gallium nitride-base ultraviolet detector with PIN structure and production thereof
TW200642101A (en) * 2005-05-18 2006-12-01 Univ Southern Taiwan Tech Photodetector
CN101335308B (en) * 2008-07-30 2012-03-21 中国科学院上海技术物理研究所 Ultraviolet detector having internal gain and preparing method
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CN102386269A (en) * 2011-11-30 2012-03-21 清华大学 GaN-based ultraviolet detector with p-i-p-i-n structure and preparation method thereof
CN102593233A (en) * 2012-03-19 2012-07-18 中国科学院上海技术物理研究所 Gallium nitride (GaN) based personal identification number (PIN) detector based on imaging sapphire substrate and preparation method
CN103915517A (en) * 2012-12-28 2014-07-09 首尔伟傲世有限公司 Light detection device

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