CN110676160A - Solar cell and manufacturing method thereof - Google Patents
Solar cell and manufacturing method thereof Download PDFInfo
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- CN110676160A CN110676160A CN201910959310.9A CN201910959310A CN110676160A CN 110676160 A CN110676160 A CN 110676160A CN 201910959310 A CN201910959310 A CN 201910959310A CN 110676160 A CN110676160 A CN 110676160A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 194
- 238000000034 method Methods 0.000 claims abstract description 84
- 238000004093 laser heating Methods 0.000 claims abstract description 19
- 229920005591 polysilicon Polymers 0.000 claims description 101
- 239000000758 substrate Substances 0.000 claims description 62
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 61
- 229910052710 silicon Inorganic materials 0.000 claims description 61
- 239000010703 silicon Substances 0.000 claims description 61
- 238000002161 passivation Methods 0.000 claims description 49
- 238000009792 diffusion process Methods 0.000 claims description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 230000003667 anti-reflective effect Effects 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 15
- 125000006850 spacer group Chemical group 0.000 abstract description 9
- 238000000059 patterning Methods 0.000 abstract description 7
- 239000002019 doping agent Substances 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000005388 borosilicate glass Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- Y02E10/546—Polycrystalline silicon PV cells
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- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The application discloses a solar cell manufacturing method, when a second polycrystalline silicon layer with a polycrystalline silicon spacer region, a first doped polycrystalline silicon region and a second doped polycrystalline silicon region with opposite polarities is formed, the first doped polycrystalline silicon region and the second doped polycrystalline silicon region are formed in a laser heating mode, the step of patterning any layer is not needed in the whole manufacturing process, an extra high-temperature treatment process is not needed, the solar cell manufacturing process is simplified, and therefore the production efficiency of a solar cell is improved. In addition, the application also provides a solar cell with the advantages.
Description
Technical Field
The present disclosure relates to the field of solar cell technology, and more particularly, to a solar cell and a method for manufacturing the same.
Background
The front side of the back contact solar cell using the passivation contact technology is free of metal grid lines, so that current loss caused by shielding of the metal grid lines can be avoided, and the problem that slurry of the metal grid lines is burnt through a passivation layer to be contacted with a silicon substrate to generate surface recombination to cause low on-off voltage of the solar cell when the metal grid lines are sintered can be avoided, so that the back contact solar cell becomes a research hotspot.
The back contact solar cell containing the polycrystalline silicon layer combined by the N-type polycrystalline silicon and the P-type polycrystalline silicon reduces the surface recombination of the contact area of the metal grid line and the silicon substrate to the maximum extent, and improves the open voltage. An insulating region is required to be arranged between the N-type polycrystalline silicon and the P-type polycrystalline silicon, and the insulating region can be a channel or undoped polycrystalline silicon with resistance raised by an oxygen ion implantation method. When the insulation region is a channel, a process of patterning the doping layer is required when forming the N-type polycrystalline silicon and the P-type polycrystalline silicon, which is very complicated; when the insulation region is undoped polysilicon after resistance is improved, an ion implantation method is needed, a mask material is needed in the process, a resistor spacer region is formed by a specific pattern, an additional mask layer and a patterning step needed by the mask layer are also introduced, and in addition, the ion implantation method needs a high-temperature treatment process, so that the existing back contact solar cell preparation process is very complex and tedious, and the production efficiency of the solar cell is low.
Therefore, how to simplify the manufacturing process of the solar cell is a technical problem to be solved urgently by those skilled in the art.
Disclosure of Invention
The present application provides a solar cell and a method for fabricating the same, so as to simplify a process for fabricating the solar cell.
In order to solve the above technical problem, the present application provides a method for manufacturing a solar cell, including:
forming a diffusion layer on the front surface of the silicon substrate;
forming a dielectric layer on the back of the silicon substrate;
forming a polysilicon layer on the lower surface of the dielectric layer;
forming a first type doping layer on the lower surface of the polycrystalline silicon layer;
heating a first preset region of the first type doping layer by adopting a laser heating mode, so that a region corresponding to the polycrystalline silicon layer and the first preset region forms a first doped polycrystalline silicon region, and a first polycrystalline silicon layer is obtained;
removing the first type doping layer;
forming a second-type doping layer on the lower surface of the first polycrystalline silicon layer, wherein the polarity of the second-type doping layer is opposite to that of the first-type doping layer;
heating a second preset region of the second type doping layer by adopting a laser heating mode, so that a second doping polycrystalline silicon region is formed in a region corresponding to the first polycrystalline silicon layer and the second preset region, and a second polycrystalline silicon layer is obtained, wherein the second polycrystalline silicon layer is provided with a polycrystalline silicon interval region positioned between the first doping polycrystalline silicon region and the second doping polycrystalline silicon region;
removing the second-type doped layer;
forming a first passivation layer on the lower surface of the second polysilicon layer;
forming an antireflective layer on an upper surface of the diffusion layer;
and forming a metal electrode on the lower surface of the first passivation layer.
Optionally, forming a first type doping layer on the lower surface of the polysilicon layer includes:
and forming the first type doping layer on the lower surface of the polycrystalline silicon layer by adopting any one method of an atmospheric pressure chemical vapor deposition method, a screen printing method, an ink-jet method and a spin-coating method.
Optionally, the forming a diffusion layer on the front surface of the silicon substrate includes:
and forming the diffusion layer on the front surface of the silicon substrate by adopting a thermal diffusion method or an ion implantation method.
Optionally, the forming a dielectric layer on the back side of the silicon substrate includes:
and forming the dielectric layer on the back surface of the silicon substrate by adopting any one of a chemical vapor deposition method, a high-temperature thermal oxidation method and a nitric acid oxidation method.
Optionally, before forming the polysilicon layer on the back side of the silicon substrate, the method further includes:
and texturing the silicon substrate.
Optionally, before forming the antireflection layer on the upper surface of the diffusion layer, the method further includes:
forming a second passivation layer on an upper surface of the diffusion layer;
accordingly, forming an antireflective layer on the upper surface of the diffusion layer comprises:
and forming the antireflection layer on the upper surface of the second passivation layer.
The present application also provides a solar cell, including:
a silicon substrate;
a dielectric layer located on the back of the silicon substrate;
the second polycrystalline silicon layer is positioned on the lower surface of the dielectric layer and comprises a first doped polycrystalline silicon region, a second doped polycrystalline silicon region and a polycrystalline silicon spacing region positioned between the first doped polycrystalline silicon region and the second doped polycrystalline silicon region, wherein the polarities of the first doped polycrystalline silicon region and the second doped polycrystalline silicon region are opposite, and the first doped polycrystalline silicon region and the second doped polycrystalline silicon region are obtained by a laser heating mode;
a first passivation layer on the lower surface of the second polysilicon layer;
the metal electrode is positioned on the lower surface of the first passivation layer;
the diffusion layer is positioned on the front surface of the silicon substrate;
an antireflective layer on an upper surface of the diffusion layer.
Optionally, the dielectric layer is any one of the following:
silicon dioxide dielectric layer, silicon nitride dielectric layer, aluminum oxide dielectric layer and hafnium oxide dielectric layer.
Optionally, the thickness of the dielectric layer ranges from 1 nm to 4 nm, inclusive.
Optionally, the method further includes:
a second passivation layer between the diffusion layer and the anti-reflection layer.
The solar cell manufacturing method comprises the steps of forming a diffusion layer on the front side of a silicon substrate; forming a dielectric layer on the back of the silicon substrate; forming a polysilicon layer on the lower surface of the dielectric layer; forming a first type doping layer on the lower surface of the polycrystalline silicon layer; heating a first preset region of the first type doping layer by adopting a laser heating mode, so that a region corresponding to the polycrystalline silicon layer and the first preset region forms a first doped polycrystalline silicon region, and a first polycrystalline silicon layer is obtained; removing the first type doping layer; forming a second-type doping layer on the lower surface of the first polycrystalline silicon layer, wherein the polarity of the second-type doping layer is opposite to that of the first-type doping layer; heating a second preset region of the second type doping layer by adopting a laser heating mode, so that a second doping polycrystalline silicon region is formed in a region corresponding to the first polycrystalline silicon layer and the second preset region, and a second polycrystalline silicon layer is obtained, wherein the second polycrystalline silicon layer is provided with a polycrystalline silicon interval region positioned between the first doping polycrystalline silicon region and the second doping polycrystalline silicon region; removing the second-type doped layer; forming a first passivation layer on the lower surface of the second polysilicon layer; forming an antireflective layer on an upper surface of the diffusion layer; and forming a metal electrode on the lower surface of the first passivation layer.
Therefore, when the second polycrystalline silicon layer with the polycrystalline silicon spacer region, the first doped polycrystalline silicon region and the second doped polycrystalline silicon region with opposite polarities is formed, the first doped polycrystalline silicon region and the second doped polycrystalline silicon region are formed in a laser heating mode, the step of patterning any layer is not needed in the whole manufacturing process, an extra high-temperature processing process is not needed, the manufacturing process of the solar cell is simplified, and therefore the production efficiency of the solar cell is improved. In addition, the application also provides a solar cell with the advantages.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing a solar cell according to an embodiment of the present disclosure;
fig. 2 to 11 are process flow diagrams of a method for manufacturing a solar cell according to an embodiment of the present disclosure;
fig. 12 is a flowchart of a method for manufacturing a solar cell according to an embodiment of the present disclosure;
fig. 13 is a schematic structural diagram of a solar cell according to an embodiment of the present disclosure;
fig. 14 is a schematic structural diagram of another solar cell provided in the embodiment of the present application.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background art, when a back contact solar cell including a polysilicon layer in which N-type polysilicon and P-type polysilicon are combined is manufactured, an insulating region needs to be formed between the N-type polysilicon and the P-type polysilicon, and patterning is required for both the insulating region and the undoped polysilicon after resistance increase, which is very complicated, and even requires a high temperature process, so that the complexity is further increased, and the production efficiency of the solar cell is low.
In view of the above, the present application provides a method for manufacturing a solar cell, please refer to fig. 1, where fig. 1 is a flowchart of a method for manufacturing a solar cell according to an embodiment of the present application, and the method includes:
step S101: a diffusion layer is formed on the front surface of the silicon substrate.
Referring to fig. 2, a diffusion layer 2 is formed on the front surface of a silicon substrate 1.
The front surface of the silicon substrate is a surface facing the sun, and the back surface is a surface facing away from the sun.
It should be noted that, in the present embodiment, a method for forming the diffusion layer is not particularly limited, and may be determined as appropriate. For example, a thermal diffusion method, or an ion implantation method, or a laser doping method, or the like can be used.
Specifically, when a thermal diffusion method is adopted, diffusion layers are formed on the front surface and the back surface of the silicon substrate, and then an etching process is carried out to etch away the diffusion layer on the back surface and phosphorosilicate glass or borosilicate glass on the front surface; when an ion implantation method or a laser doping method is adopted, a diffusion layer is formed only on the front surface of the silicon substrate, and then an etching process is carried out to etch away phosphorosilicate glass or borosilicate glass on the front surface.
Optionally, wet etching may be used for the etching process, and a mixed acid solution of nitric acid and hydrofluoric acid, or a potassium hydroxide solution, or a sodium hydroxide solution may be used.
Step S102: and forming a dielectric layer on the back surface of the silicon substrate.
Referring to fig. 3, a dielectric layer 3 is formed on the back surface of the silicon substrate 1.
Step S103: and forming a polysilicon layer on the lower surface of the dielectric layer.
Referring to fig. 4, a polysilicon layer 4 is formed on the lower surface of the dielectric layer 3.
Specifically, a polysilicon layer is prepared by a plasma enhanced chemical vapor deposition method or a physical vapor deposition method, and high-temperature annealing is performed within a range of 700 ℃ to 1000 ℃.
It is understood that the polysilicon layer is an undoped polysilicon layer.
Step S104: and forming a first type doping layer on the lower surface of the polycrystalline silicon layer.
Referring to fig. 5, a first type doping layer 5 is formed on the lower surface of the polysilicon layer 5.
It should be noted that, in this embodiment, the polarity of the first type doped layer is not particularly limited, and may be an N type doped layer or a P type doped layer. For example, the first type of doped layer may be silicon dioxide doped with a dopant, or borosilicate glass, or phosphosilicate glass, or a liquid phase dopant source containing a dopant, wherein the dopant may be phosphorus or boron.
Step S105: and heating a first preset region of the first type doping layer by adopting a laser heating mode, so that a region corresponding to the polycrystalline silicon layer and the first preset region forms a first doped polycrystalline silicon region, and a first polycrystalline silicon layer is obtained.
It will be appreciated that the first predetermined region is a localized region of the first-type doped layer and is not the entire region of the first-type doped layer. Similarly, the polarity of the first doped polysilicon region is the same as the polarity of the first type doped layer. The first polycrystalline silicon layer is composed of a first doped polycrystalline silicon region and a polycrystalline silicon region.
Referring to fig. 6, a first preset region of the first type doping layer 5 is heated by a laser heating method, so that a phosphorus or boron dopant in the first type doping layer 5 enters the polysilicon layer 4, and a first doped polysilicon region is formed in a region of the polysilicon layer corresponding to the first preset region, thereby obtaining a first polysilicon layer 6.
Step S106: and removing the first type doping layer.
Specifically, when the first type doped layer is silicon dioxide doped with a dopant, or borosilicate glass, or phosphosilicate glass, the first type doped layer can be removed by using a hydrofluoric acid solution.
Step S107: and forming a second-type doping layer on the lower surface of the first polycrystalline silicon layer, wherein the polarity of the second-type doping layer is opposite to that of the first-type doping layer.
Referring to fig. 7, a second-type doping layer 7 is formed on the lower surface of the first polysilicon layer 6.
It is to be noted that the polarity of the second-type doped layer is not particularly limited in this embodiment as long as the polarity is opposite to that of the first-type doped layer. For example, the first type of doped layer may be silicon dioxide doped with a dopant, or borosilicate glass, or phosphosilicate glass, or a liquid phase dopant source containing a dopant, wherein the dopant may be phosphorus or boron.
Step S108: and heating a second preset region of the second type doped layer by adopting a laser heating mode, so that a second doped polysilicon region is formed in a region corresponding to the first polysilicon layer and the second preset region, and a second polysilicon layer is obtained, wherein the second polysilicon layer is provided with a polysilicon spacer region positioned between the first doped polysilicon region and the second doped polysilicon region.
Referring to fig. 8, a second preset region of the second-type doping layer 7 is heated by laser heating, so that the phosphorus or boron dopant in the second-type doping layer 7 enters the first polysilicon layer 6, and a second doped polysilicon region is formed in a region of the first polysilicon layer 6 corresponding to the second preset region, thereby obtaining a second polysilicon layer 8.
It can be understood that the second predetermined region is a local region of the second-type doped layer, and a gap is left between the second doped polysilicon region and the first doped polysilicon region, where the gap is a polysilicon spacer, and the polysilicon spacer is undoped polysilicon. The second polysilicon layer is composed of a first doped polysilicon region, a second doped polysilicon region and a polysilicon region.
It will also be appreciated that since the second type doped layer is of opposite polarity to the first type doped layer, the second doped polysilicon region is of opposite polarity to the first doped polysilicon region.
Step S109: and removing the second-type doped layer.
Specifically, when the second-type doped layer is silicon dioxide doped with a dopant, or borosilicate glass, or phosphosilicate glass, the second-type doped layer can be removed by using a hydrofluoric acid solution.
Step S110: and forming a first passivation layer on the lower surface of the second polysilicon layer.
Referring to fig. 9, a first passivation layer 9 is formed on the lower surface of the second polysilicon layer 8.
Specifically, the first passivation layer may be deposited using a plasma chemical vapor deposition method.
Step S111: and forming an antireflection layer on the upper surface of the diffusion layer.
Referring to fig. 10, an antireflection layer 10 is formed on the upper surface of the diffusion layer 2.
Specifically, the anti-reflection layer can be deposited by plasma chemical vapor deposition, but other methods, such as organic chemical vapor deposition, can also be used, and the anti-reflection layer has the dual functions of anti-reflection and passivation.
Step S112: and forming a metal electrode on the lower surface of the first passivation layer.
Referring to fig. 11, a metal electrode 11 is formed on the lower surface of the first passivation layer 9.
Specifically, a metal electrode is prepared by a screen printing method and is sintered, so that the metal electrode is burnt through the first passivation layer to be in contact with the second polysilicon layer.
On the basis of any one of the above embodiments, in an embodiment of the present application, the forming of the first type doping layer on the lower surface of the polysilicon layer includes:
and forming the first type doping layer on the lower surface of the polycrystalline silicon layer by adopting any one method of an atmospheric pressure chemical vapor deposition method, a screen printing method, an ink-jet method and a spin-coating method.
On the basis of any one of the above embodiments, in an embodiment of the present application, the forming a dielectric layer on the back surface of the silicon substrate includes:
and forming the dielectric layer on the back surface of the silicon substrate by adopting any one of a chemical vapor deposition method, a high-temperature thermal oxidation method and a nitric acid oxidation method.
In the solar cell manufacturing method in the embodiment, when the second polysilicon layer having the polysilicon spacer region, the first doped polysilicon region and the second doped polysilicon region with opposite polarities is formed, the first doped polysilicon region and the second doped polysilicon region are formed in a laser heating manner, and no patterning step is required in any layer in the whole manufacturing process, and no extra high-temperature treatment process is required, so that the solar cell manufacturing process is simplified, and the solar cell production efficiency is improved.
Referring to fig. 12, fig. 12 is a flowchart of another method for manufacturing a solar cell according to an embodiment of the present disclosure, the method including:
step S201: and texturing the silicon substrate.
It should be noted that, the silicon substrate may be subjected to texturing by, but not limited to, a wet texturing process, where the silicon substrate is monocrystalline silicon, the texturing is performed by using an alkaline solution, such as a potassium hydroxide solution, and where the silicon substrate is polycrystalline silicon, the texturing is performed by using an acidic solution, such as a hydrofluoric acid solution.
In this embodiment, the surface of the silicon substrate has a texture structure during texturing, so that a light trapping effect is generated, the light absorption quantity of the solar cell is increased, and the efficiency of the solar cell is improved.
Preferably, the silicon substrate is cleaned prior to texturing to remove metallic and organic contaminants from the surface.
Step S202: a diffusion layer is formed on the front surface of the silicon substrate.
Preferably, when the diffusion layer is formed on the front surface of the silicon substrate by using an ion implantation method or a laser doping method, the back surface of the silicon substrate is etched to be flat during an etching process, so as to improve the current of the solar cell.
Step S203: and forming a dielectric layer on the back surface of the silicon substrate.
Step S204: and forming a polysilicon layer on the lower surface of the dielectric layer.
Step S205: and forming a first type doping layer on the lower surface of the polycrystalline silicon layer.
Step S206: and removing the first type doping layer.
Step S207: and heating a first preset region of the first type doping layer by adopting a laser heating mode, so that a region corresponding to the polycrystalline silicon layer and the first preset region forms a first doped polycrystalline silicon region, and a first polycrystalline silicon layer is obtained.
Step S208: and forming a second-type doping layer on the lower surface of the first polycrystalline silicon layer, wherein the polarity of the second-type doping layer is opposite to that of the first-type doping layer.
Step S209: and heating a second preset region of the second type doped layer by adopting a laser heating mode, so that a second doped polysilicon region is formed in a region corresponding to the first polysilicon layer and the second preset region, and a second polysilicon layer is obtained, wherein the second polysilicon layer is provided with a polysilicon spacer region positioned between the first doped polysilicon region and the second doped polysilicon region.
Step S210: and removing the second-type doped layer.
Step S211: and forming a first passivation layer on the lower surface of the second polysilicon layer.
Step S212: and forming a second passivation layer on the upper surface of the diffusion layer.
Step S213: and forming an antireflection layer on the upper surface of the second passivation layer.
Note that, in this embodiment, a method of forming the second passivation layer is not particularly limited and may be determined as appropriate. For example, a plasma chemical vapor deposition method or an organic chemical vapor deposition method can be employed.
The second passivation layer is formed in this embodiment to form a passivation film layer stacked with the antireflective layer, so that the photoelectric conversion efficiency of the solar cell is improved.
Step S214: and forming a metal electrode on the lower surface of the first passivation layer.
It should be noted that, the order of steps for manufacturing the solar cell is not particularly limited, and may be adjusted according to the actual production process.
Referring to fig. 13, fig. 13 is a schematic structural diagram of a solar cell according to an embodiment of the present disclosure, where the solar cell includes:
a silicon substrate 1;
a dielectric layer 3 positioned on the back surface of the silicon substrate 1;
a second polysilicon layer 8 located on the lower surface of the dielectric layer 3, wherein the second polysilicon layer 8 includes a first doped polysilicon region, a second doped polysilicon region, and a polysilicon spacer located between the first doped polysilicon region and the second doped polysilicon region, wherein the first doped polysilicon region and the second doped polysilicon region have opposite polarities, and the first doped polysilicon region and the second doped polysilicon region are both obtained by laser heating;
a first passivation layer 9 on the lower surface of the second polysilicon layer 8;
a metal electrode 11 on the lower surface of the first passivation layer 9;
a diffusion layer 2 located on the front surface of the silicon substrate 1;
and an antireflection layer 10 located on the upper surface of the diffusion layer 2.
Optionally, in an embodiment of the present application, the silicon substrate 1 is an N-type silicon substrate, but the present application is not particularly limited thereto, and in other embodiments of the present application, the silicon substrate 1 is a P-type silicon substrate. Wherein, the thickness of the silicon substrate 1 is between 100 μm and 250 μm, and when the silicon substrate 1 is a textured substrate, the etching thickness of the front surface and the back surface of the silicon substrate 1 is between 5 μm and 20 μm.
In an embodiment of the present application, the diffusion layer 2 is an N-type diffusion layer 2, but the present application is not limited thereto specifically, and the diffusion layer 2 may also be a P-type diffusion layer 2 in other embodiments of the present application.
Note that, in the present embodiment, the kind of the dielectric layer 3 is not particularly limited, and may be determined as appropriate. For example, the dielectric layer 3 is any one of: a silicon dioxide dielectric layer 3, a silicon nitride dielectric layer 3, an aluminum oxide dielectric layer 3 and a hafnium oxide dielectric layer 3.
It should be noted that, in this embodiment, the polarities of the first doped polysilicon region and the second doped polysilicon region are not specifically limited, as long as the polarities of the first doped polysilicon region and the second doped polysilicon region are opposite to each other. For example, when the first doped polysilicon region is an N-type doped region, the second doped polysilicon region is a P-type doped region; when the first doped polysilicon region is a P-type doped region, the second doped polysilicon region is an N-type doped region.
In an embodiment of the present application, the first passivation layer 9 is a silicon nitride layer, but the present application is not limited thereto specifically, and in other embodiments of the present application, the first passivation layer 9 may also be a stack of a silicon dioxide layer and a silicon nitride layer. Wherein the thickness of the silicon nitride layer ranges from 40 nm to 150 nm, inclusive, to produce a good passivation effect on the silicon substrate 1; the thickness of the silicon dioxide layer ranges from 1 nm to 25 nm, inclusive, to produce a good passivation effect on the silicon substrate 1.
The anti-reflection layer 10 is provided to reduce the reflection of light and increase the amount of light absorbed by the solar cell, and to achieve a passivation effect, thereby improving the efficiency of the solar cell. Specifically, the antireflective layer 10 is a silicon nitride layer.
Optionally, the thickness of the antireflective layer 10 ranges from 40 nm to 150 nm, inclusive, to produce good passivation and antireflective effects.
In the solar cell in this embodiment, the first doped polysilicon region and the second doped polysilicon region with opposite polarities in the second polysilicon layer 8 are both obtained by a laser heating method, and no patterning step or extra high-temperature treatment process is required, so that the manufacturing process of the solar cell is simpler, and the production efficiency of the solar cell is improved.
Preferably, in an embodiment of the present application, the thickness of the dielectric layer 3 ranges from 1 nm to 4 nm, inclusive. The dielectric layer 3 not only has a passivation effect on the surface of the silicon substrate 1, but also needs to enable carriers to tunnel through, and when the thickness of the dielectric layer 3 is less than 1 nanometer, the passivation effect cannot be achieved; and carriers cannot tunnel efficiently when the thickness of the dielectric layer 3 is greater than 4 nm.
Preferably, in an embodiment of the present application, the thickness of the second polysilicon layer 8 ranges from 50 nm to 300 nm, inclusive, if the thickness of the second polysilicon layer 8 is too small, the passivation effect of the stack of the second polysilicon layer 8 and the dielectric layer 3 on the surface of the silicon substrate 1 is poor, and the metal electrode 11 slurry is easily burnt through the second polysilicon layer 8 to contact the silicon substrate 1; if the thickness of the second polysilicon layer 8 is too large, a large recombination loss occurs when carriers are transported in the second polysilicon layer 8, thereby causing a reduction in the performance of the solar cell.
On the basis of any of the above embodiments, in an embodiment of the present application, please refer to fig. 14, the solar cell further includes:
a second passivation layer 12 located between the diffusion layer 2 and the antireflective layer 10.
The second passivation layer 12 is provided to form a passivation stack with the antireflective layer 10, thereby improving the efficiency of the solar cell. In particular, the second passivation layer 12 may be a silicon dioxide layer.
Optionally, the thickness of the second passivation layer 12 ranges from 1 nm to 25 nm, inclusive, to produce a good passivation effect on the silicon substrate 1.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The solar cell and the method for manufacturing the same provided by the present application are described in detail above. The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.
Claims (10)
1. A method for manufacturing a solar cell is characterized by comprising the following steps:
forming a diffusion layer on the front surface of the silicon substrate;
forming a dielectric layer on the back of the silicon substrate;
forming a polysilicon layer on the lower surface of the dielectric layer;
forming a first type doping layer on the lower surface of the polycrystalline silicon layer;
heating a first preset region of the first type doping layer by adopting a laser heating mode, so that a region corresponding to the polycrystalline silicon layer and the first preset region forms a first doped polycrystalline silicon region, and a first polycrystalline silicon layer is obtained;
removing the first type doping layer;
forming a second-type doping layer on the lower surface of the first polycrystalline silicon layer, wherein the polarity of the second-type doping layer is opposite to that of the first-type doping layer;
heating a second preset region of the second type doping layer by adopting a laser heating mode, so that a second doping polycrystalline silicon region is formed in a region corresponding to the first polycrystalline silicon layer and the second preset region, and a second polycrystalline silicon layer is obtained, wherein the second polycrystalline silicon layer is provided with a polycrystalline silicon interval region positioned between the first doping polycrystalline silicon region and the second doping polycrystalline silicon region;
removing the second-type doped layer;
forming a first passivation layer on the lower surface of the second polysilicon layer;
forming an antireflective layer on an upper surface of the diffusion layer;
and forming a metal electrode on the lower surface of the first passivation layer.
2. The method of claim 1, wherein forming a first type doping layer on a lower surface of the polysilicon layer comprises:
and forming the first type doping layer on the lower surface of the polycrystalline silicon layer by adopting any one method of an atmospheric pressure chemical vapor deposition method, a screen printing method, an ink-jet method and a spin-coating method.
3. The method of claim 1, wherein forming a diffusion layer on the front side of the silicon substrate comprises:
and forming the diffusion layer on the front surface of the silicon substrate by adopting a thermal diffusion method or an ion implantation method.
4. The method of claim 1, wherein the forming the dielectric layer on the back side of the silicon substrate comprises:
and forming the dielectric layer on the back surface of the silicon substrate by adopting any one of a chemical vapor deposition method, a high-temperature thermal oxidation method and a nitric acid oxidation method.
5. The method of claim 1, further comprising, before forming the polysilicon layer on the backside of the silicon substrate:
and texturing the silicon substrate.
6. The method of fabricating a solar cell according to any one of claims 1 to 5, further comprising, before forming an antireflective layer on the upper surface of the diffusion layer:
forming a second passivation layer on an upper surface of the diffusion layer;
accordingly, forming an antireflective layer on the upper surface of the diffusion layer comprises: and forming the antireflection layer on the upper surface of the second passivation layer.
7. A solar cell, comprising:
a silicon substrate;
a dielectric layer located on the back of the silicon substrate;
the second polycrystalline silicon layer is positioned on the lower surface of the dielectric layer and comprises a first doped polycrystalline silicon region, a second doped polycrystalline silicon region and a polycrystalline silicon spacing region positioned between the first doped polycrystalline silicon region and the second doped polycrystalline silicon region, wherein the polarities of the first doped polycrystalline silicon region and the second doped polycrystalline silicon region are opposite, and the first doped polycrystalline silicon region and the second doped polycrystalline silicon region are obtained by a laser heating mode;
a first passivation layer on the lower surface of the second polysilicon layer;
the metal electrode is positioned on the lower surface of the first passivation layer;
the diffusion layer is positioned on the front surface of the silicon substrate;
an antireflective layer on an upper surface of the diffusion layer.
8. The solar cell of claim 7, wherein the dielectric layer is any one of:
silicon dioxide dielectric layer, silicon nitride dielectric layer, aluminum oxide dielectric layer and hafnium oxide dielectric layer.
9. The solar cell of claim 8, wherein the dielectric layer has a thickness ranging from 1 nanometer to 4 nanometers, inclusive.
10. The solar cell of any of claims 7 to 9, further comprising:
a second passivation layer between the diffusion layer and the anti-reflection layer.
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| CN114464687B (en) * | 2021-12-28 | 2024-05-10 | 浙江爱旭太阳能科技有限公司 | Local double-sided tunneling passivation contact structure battery and preparation method thereof |
| CN114597288A (en) * | 2022-03-30 | 2022-06-07 | 浙江求是半导体设备有限公司 | Preparation method of back contact type double-sided battery |
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| US20160351737A1 (en) * | 2015-05-28 | 2016-12-01 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
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| US20160351737A1 (en) * | 2015-05-28 | 2016-12-01 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
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Application publication date: 20200110 |