CN110661515B - Gate driver of silicon carbide MOSFET - Google Patents

Gate driver of silicon carbide MOSFET Download PDF

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Publication number
CN110661515B
CN110661515B CN201910802107.0A CN201910802107A CN110661515B CN 110661515 B CN110661515 B CN 110661515B CN 201910802107 A CN201910802107 A CN 201910802107A CN 110661515 B CN110661515 B CN 110661515B
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driving
voltage
silicon carbide
carbide mosfet
gate
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CN110661515A (en
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赵文祥
黄林森
杜育轩
邱先群
晋世博
王恒
吉敬华
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Jiangsu University
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Jiangsu University
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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Abstract

The invention provides a grid driver of a silicon carbide MOSFET, which comprises a driving logic control circuit, a short circuit fault detection circuit, a driving module 1, a driving module 2, a driving module 3 and a driving module 4. According to the invention, through integrating 4 driving modules, the grid voltage changes at different moments of the silicon carbide MOSFET are respectively controlled, the ways of changing the on grid level, changing the off grid level and changing the soft off grid level are configurable, the control of the width of the conducting channel of the silicon carbide MOSFET is realized, the short-circuit current of short-circuit faults at the moment of opening is reduced, and the working reliability of the silicon carbide MOSFET is improved.

Description

Gate driver of silicon carbide MOSFET
Technical Field
The invention belongs to the technical field of power electronic technology full-control MOSFET and IGBT power semiconductor grid drive, and particularly relates to a grid driver of a silicon carbide MOSFET.
Background
The silicon carbide material has the characteristics of high breakdown field strength, wide forbidden band, high thermal conductivity, high electron saturation speed and the like, so that the silicon carbide power device has higher working frequency, lower on-resistance and higher working temperature compared with a silicon power device. The use of wide bandgap semiconductor silicon carbide devices, particularly silicon carbide MOSFETs, has further driven the development of power electronic converters to high frequency and high power densities.
Silicon carbide MOSFETs benefit from high breakdown field strength, and the thickness and area of the wafer are made smaller, so that the characteristic of low on-resistance is realized. However, smaller wafer area and thickness affect its resistance to short circuit currents, on the one hand, low on-resistance and shorter conduction channels result in a faster rise in short circuit current, and on the other hand, smaller wafer area and thickness result in a faster rise in junction temperature of the silicon carbide MOSFET at short circuit. In addition, silicon carbide MOSFETs have lower on threshold voltages and more on gate voltages, requiring longer off times to reduce the gate voltage below the threshold voltage during shorting operations. Thus, the occurrence of a short circuit at the moment of turn-on of a silicon carbide MOSFET will be more susceptible to damage than IGBTs and MOSFETs of silicon devices. The traditional IGBT and MOSFET gate driver for the silicon power device are directly applied to the silicon carbide MOSFET driving, and the risk that the short circuit cannot be timely protected exists due to the characteristic of low short circuit tolerance of the silicon carbide MOSFET.
Current gate drive solutions for silicon power devices IGBTs and MOSFETs apply a positive voltage at the gate when the IGBTs and MOSFETs need to be turned on, causing the IGBTs and MOSFETs to turn on quickly. Applying a 0 or negative voltage at the gate causes the IGBT and MOSFET to turn off quickly when they need to turn off. And when a short circuit fault occurs, adopting a soft turn-off scheme and a two-level turn-off scheme. In the bridge circuit most commonly used, when one switching tube device in the same bridge arm is damaged, the other switching tube can have a short circuit when being opened. If the grid voltage of the power device is too high at the moment, the saturated current at the moment of short-circuiting the IGBT and the MOSFET is too large, so that the short-circuit tolerance time of the IGBT and the MOSFET is reduced. In most of the current common driving schemes, a single level is used to rapidly raise the gate voltage to be on. The IGBT and MOSFET have large current gain and large saturation current. When a short circuit condition occurs, the IGBT and the MOSFET are damaged before the short circuit protection action is completed, so that the short circuit fault cannot be prevented, and a more serious short circuit accident is caused. In addition, the switching-on mode, the switching-off mode and the switching-off level change mode of the short circuit moment of the existing gate driver are relatively fixed, and cannot be flexibly configured according to actual requirements.
Disclosure of Invention
The invention aims to overcome the defects of the existing silicon IGBT and silicon MOSFET grid driving circuit when the existing silicon IGBT and silicon MOSFET grid driving circuit is directly applied to a silicon carbide MOSFET, solve the problems that the silicon carbide MOSFET is short-circuited at the moment of switching on, the short-circuit current is overlarge, the short-circuit tolerance time of the silicon carbide MOSFET is insufficient, and the short-circuit protection circuit is damaged when the silicon carbide MOSFET does not act yet, and solve the problems that a grid switching-on level change mode, a switching-off level mode and a soft switching-off level change mode cannot be flexibly configured.
The invention aims to achieve the configurable change modes of the grid level, the switch-off level and the soft switch-off level by the following measures; and the short-circuit current at the turn-on time is limited, the tolerance time of the short circuit of the silicon carbide MOSFET is prolonged, and the reliability of the silicon carbide MOSFET is improved.
The technical scheme of the invention is as follows: the grid driver of the silicon carbide MOSFET comprises a driving logic control circuit, a short-circuit fault detection circuit, a driving module 1, a driving module 2, a driving module 3 and a driving module 4;
one end of the driving logic control circuit receives the PWM driving signal and outputs the working state of the driver, and the other end of the driving logic control circuit is respectively connected with the short-circuit fault detection circuit, the driving module 1, the driving module 2, the driving module 3 and the driving module 4. The driving logic control circuit controls the driving module 1, the driving module 2, the driving module 3 and the driving module 4 according to the PWM driving signal and the signal of the short-circuit fault detection circuit;
the short circuit fault detection circuit is also respectively connected with the silicon carbide MOSFET and the driving logic control circuit and is used for detecting the short circuit and the overcurrent signals of the silicon carbide MOSFET and transmitting the short circuit or the overcurrent signals to the driving logic control circuit.
Further, the driving module 1 comprises a driving voltage source u1, a driving resistor R1 and a switching device SW1; the driving module 1 opens or closes the switching device SW1 according to a control instruction of the driving logic control circuit, and adds the voltage of the voltage source u1 to the grid electrode of the MOSFET through the driving resistor or cuts off the connection between the voltage source u1 and the grid electrode of the MOSFET;
the driving module 2 comprises a driving voltage source u2, a driving resistor R2 and a switching device 2; the driving module 2 opens or closes the switching device SW2 according to a control instruction of the driving logic control circuit, and adds the voltage of the voltage source u2 to the grid electrode of the MOSFET through the driving resistor or cuts off the connection between the voltage source u2 and the grid electrode of the MOSFET;
the driving module 3 comprises a driving voltage source u3, a driving resistor R3 and a switching device SW3; the driving module 1 opens or closes the switching device SW3 according to a control instruction of the driving logic control circuit, and adds the voltage of the voltage source u3 to the grid electrode of the MOSFET through the driving resistor or cuts off the connection between the voltage source u3 and the grid electrode of the MOSFET;
the driving module 4 comprises a driving voltage source u4, a driving resistor R4 and a switching device SW4; the driving module 4 is connected with the grid electrode and the source electrode of the silicon carbide MOSFET after being connected in series, the driving module 4 opens or closes the switching device SW4 according to a control instruction of the driving logic control circuit, and the voltage of the voltage source u4 is added to the grid electrode of the MOSFET through the driving resistor or the connection between the voltage source u4 and the grid electrode of the MOSFET is cut off.
Further, each driving module sets the voltage of the voltage source and the resistance of the driving resistor in the driving module according to the requirement.
Further, the driving modules 1, 2, 3 and 4 are used for controlling the voltages of the grid electrodes of the silicon carbide MOSFET, any one of the driving modules is configured for controlling the first on-state grid voltage U1, any one of the driving modules is configured for controlling the second on-state grid voltage U2, any one of the driving modules is configured for controlling the turn-off time grid voltage U3, and any one of the driving modules is configured for controlling the short-circuit time soft-turn-off grid voltage U4.
Further, a driving module configured to control the first on-state gate voltage U1,
for controlling the switching of the silicon carbide MOSFET gate from the gate voltage U3 at the turn-off time to the first on-state gate voltage U1 and maintaining the first on-state gate voltage U1;
the control circuit can also be used for switching from the second conduction state grid voltage U2 to the first conduction state grid voltage U1 after the control grid is short-circuited;
the voltage of the driving module is lower than the voltage of the second conduction state grid voltage U2 driving module, so that the first conduction state short-circuit current is smaller than the second conduction state short-circuit current.
Further, a driving module for controlling the second on-state gate voltage U2, for controlling the transition of the silicon carbide MOSFET gate from the first on-state gate voltage U1 to the second on-state gate voltage U2 and maintaining the gate voltage at the second on-state time;
may also be used to control the transition of the silicon carbide MOSFET gate from the off-time gate voltage U3 to the second on-state gate voltage U2 and maintain the second on-state gate voltage U2.
Further, the driving module for controlling the turn-off gate voltage U3 is configured to control the change of the silicon carbide MOSFET gate from the first turn-on state gate voltage U1 to the turn-off time gate voltage U3, and maintain the turn-off time gate voltage U3;
the method can also be used for controlling the change of the grid electrode of the silicon carbide MOSFET from the second on-state grid voltage U2 to the grid voltage U3 at the turn-off moment, and controlling the change of the grid electrode of the silicon carbide MOSFET from the soft turn-off grid voltage at the short circuit moment to the grid voltage U3 at the turn-off moment and maintaining the grid voltage U3 at the turn-off moment.
Further, a driving module configured for the short time soft-off gate voltage U4 is used to convert the level of the gate of the silicon carbide MOSFET to the short time soft-off gate voltage U4 in the event of a short circuit.
Further, the driving module of the first on-state gate voltage U1 applies U1 to the gate of the silicon carbide MOSFET through the driving resistor R1 by closing the switch SW1 therein, to drive the silicon carbide MOSFET to be turned on, and controls the conduction channel of the silicon carbide MOSFET to be smaller than that of the second on-state, so as to limit the short-circuit current of the silicon carbide MOSFET when the first on-state gate voltage U1 is short-circuited.
Further, the driving module of the second on-state gate voltage U2 maintains the silicon carbide MOSFET on by closing the internal switching device SW2 to apply U2 to the gate of the silicon carbide MOSFET through the internal driving resistor R2. The conducting channel of the silicon carbide MOSFET is controlled to be larger than the conducting channel in the first conducting state, so that the conducting resistance is reduced;
the on-state grid of the silicon carbide MOSFET comprises two levels, namely a first on-state grid voltage U1 and a second on-state grid voltage U2; the gate driver of the silicon carbide MOSFET enters a first conduction state during the turn-on process, and then enters a second conduction state after being maintained for a period of time or confirming that no short circuit fault exists.
Compared with the prior art, the invention has the advantages that:
the grid driver of the silicon carbide MOSFET comprises a driving module 1, a driving module 2, a driving module 3 and a driving module 4. Any one of the modules is configured to control the first on-state gate voltage U1, any one of the modules is configured to control the second on-state gate voltage U2, any one of the modules is configured to control the off-time gate voltage U3, and any one of the modules is configured to control the short-circuit time soft-off gate voltage U4. The level of each driving module can be set according to the parameters of the silicon carbide MOSFET, and the driving logic control circuit controls each driving module to work, so that various on-off and short-circuit action modes can be realized
The driving resistance values of the grid driver driving modules 1, 2, 3 and 4 of the silicon carbide MOSFET can be set according to design requirements, and the gradient of the grid voltage change in different states can be controlled.
According to the grid driver of the silicon carbide MOSFET, the silicon carbide MOSFET can work in different on states, namely a first on state and a second on state. The gate voltage of the first conductive state is lower than the gate voltage of the second conductive state. The conduction channel of the first conduction state silicon carbide MOSFET is smaller than the conduction channel of the second conduction stage. The configuration is conducted and enters the first conduction state firstly, so that the silicon carbide MOSFET is in the first conduction state when the silicon carbide MOSFET is in short circuit at the moment of conducting, short circuit saturation current is limited, and short circuit tolerance time of the silicon carbide MOSFET is prolonged. The probability of damage to the silicon carbide MOSFET before the short-circuit protection action is completed is reduced.
The grid driver of the silicon carbide MOSFET can be used for not only the silicon carbide MOSFET, but also the driving of the silicon MOSFET and the IGBT.
Drawings
FIG. 1 is a schematic diagram of a gate driver for a silicon carbide MOSFET in accordance with the present invention
FIG. 2 is a schematic diagram of a gate driver for a silicon carbide MOSFET in accordance with the present invention
FIG. 3 is a drive timing diagram of a gate driver for a silicon carbide MOSFET in accordance with the present invention
FIG. 4 is a drive timing diagram of a gate driver for a silicon carbide MOSFET in accordance with the present invention
FIG. 5 is a timing diagram of a gate driver for a silicon carbide MOSFET in accordance with the present invention
FIG. 6 is a drive timing diagram of a gate driver for a silicon carbide MOSFET in accordance with the present invention
FIG. 7 is a timing diagram of a gate driver for a silicon carbide MOSFET in accordance with the present invention
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
As shown in fig. 1, the driving logic control circuit is mainly composed of a microprocessor MCU and a digital circuit. The short-circuit fault detection circuit is composed of a current detection circuit and an overcurrent and short-circuit current value setting circuit. The overcurrent and short-circuit current value setting circuit is a common circuit.
As shown in fig. 2, u1, SW1 and R1 constitute a driving module 1, u1 represents a voltage source of one level, SW1 represents a switching device for driving control, R1 represents a driving resistor, and in this embodiment, the driving module 1 is used to control the first on-state gate voltage. The three parts u1, SW1 and R1 are connected in series and then connected with the grid electrode and the drain electrode of the silicon carbide MOSFET.
As shown in fig. 2, u2, SW2 and R2 constitute a driving module 2, u2 represents a voltage source of one level, SW2 represents a switching device for driving control, R2 represents a driving resistance, and in this embodiment the driving module 2 is used for controlling the second on-state gate voltage. The u2, SW2 and R2 parts are connected in series and then connected with the grid electrode and the drain electrode of the silicon carbide MOSFET.
As shown in fig. 2, u3, SW3 and R3 form a voltage source for the drive module 3, u3 representing a voltage source of one level, SW3 representing a switching device for the drive control, R3 representing a drive resistor, in which embodiment the drive module 3 is used in this embodiment to control the gate voltage at the moment of switching off. The u3, SW3 and R3 parts are connected in series and then connected with the grid electrode and the drain electrode of the silicon carbide MOSFET.
As shown in fig. 2, u4, SW4 and R4 form a voltage source for the drive module 1, u4 representing a voltage level, SW4 representing a switching device for the drive control, R4 representing a driving resistor, in which embodiment the drive module 1 is used for controlling the soft-off gate voltage u4 at the moment of the short circuit. The u4, SW4 and R4 parts are connected in series and then connected with the grid electrode and the drain electrode of the silicon carbide MOSFET.
Fig. 3 illustrates a driving mode of the gate driver of the silicon carbide MOSFET of the present invention. At time t0, the PWM drive signal is high, the circuit has no short circuit fault, the drive module 1 closes SW1 and applies u1 voltage to the gate of the silicon carbide MOSFET through the drive resistor R1. The gate voltage of the silicon carbide MOSFET rises to U1. At time t1, the PWM drive signal is high and the circuit has no short circuit fault, SW1 of the drive module 1 is opened, SW2 of the drive module 2 is closed, and u2 voltage is applied to the gate of the silicon carbide MOSFET through the drive resistor R2. The gate voltage of the silicon carbide MOSFET rises from U1 to U2. At time t2, the PWM driving signal becomes low level, the circuit has no short circuit fault, SW2 of the driving module 2 is opened, SW3 is closed by the driving module 3, the driving voltage is applied to the gate through the driving electron R3, and the gate voltage is changed from U2 to U3. the time t0 to t1 is set according to the parameters and time application of the silicon carbide MOSFET. t0 to t1 are the first conductive states described in the invention, and t1 to t2 are the second conductive states described in the invention.
Fig. 3 illustrates a driving mode of the gate driver of the silicon carbide MOSFET of the present invention. the short circuit signal appears at time t4, the SW2 of the driving module 2 is opened, the driving module 4 closes the SW4 to apply the voltage U4 to the grid electrode of the silicon carbide MOSFET through the driving resistor R4, in order to realize that the resistance value of the soft-off resistor R4 is larger, the voltage of the grid electrode is changed into U4 at time t5 when the U2 drops to be slower than the normal turn-off of the U4, at the moment, the SW4 of the driving module 4 is opened, and the SW3 of the driving module 3 is closed to apply the U3 voltage to the grid electrode of the silicon carbide MOSFET through the R3. The silicon carbide MOSFET gate will maintain the level of U3 until the fault signal is removed. the time from t4 to t5 is set according to the parameters and practical application of the silicon carbide MOSFET.
As shown in fig. 4, in a driving mode of the gate driver of the silicon carbide MOSFET according to the present invention, at time t0, the PWM driving signal is at high level, the circuit has no short circuit fault, SW1 of the driving module 1 is closed to apply u1 voltage to the gate of the silicon carbide MOSFET through the driving resistor R1. The gate voltage of the silicon carbide MOSFET rises to U1. At time t1, the PWM drive signal is high and the circuit has no short circuit fault, SW1 of the drive module 1 is opened, SW2 of the drive module 2 is closed, and u2 voltage is applied to the gate of the silicon carbide MOSFET through the drive resistor R2. The gate voltage of the silicon carbide MOSFET rises from U1 to U2. At time t2, the PWM driving signal becomes low level, the circuit has no short circuit fault, SW2 of the driving module 2 is opened, SW3 of the driving module 3 is closed, the driving voltage is applied to the gate through the driving electron R3, and the gate voltage is changed from U2 to U3. the time t0 to t1 is set according to the parameters and time application of the silicon carbide MOSFET. t0 to t1 are the first conductive states described in the invention, and t1 to t2 are the second conductive states described in the invention.
As shown in fig. 4, in a driving mode of the gate driver of the silicon carbide MOSFET according to the present invention, a short circuit signal appears at time t4, SW2 of the driving module 2 is opened, SW1 of the driving module 1 is closed, a voltage U1 is applied to the gate of the silicon carbide MOSFET through the driving resistor R1, the voltage of the gate rapidly drops to U1, at this time, SW1 of the driving module 1 is opened, and SW4 of the driving module 4 applies U4 to the gate of the silicon carbide MOSFET through the driving resistor R4. In order to realize that the resistance value of the soft-off resistor R4 is larger, the voltage of the grid electrode is changed into U4 at the moment t5 when U1 is reduced to be slower than the normal turn-off of U4, at this moment, the SW4 of the driving module 4 is disconnected, and the SW3 of the driving module 3 adds the U3 voltage to the grid electrode of the silicon carbide MOSFET through R3. The silicon carbide MOSFET gate will maintain the level of U3 until the fault signal is removed. the time from t4 to t5 is set according to the parameters and time application of the silicon carbide MOSFET.
The difference between fig. 3 and fig. 4 is that after the occurrence of the short circuit t4, fig. 3 directly realizes the short soft shutdown by the driving module 4, while fig. 4 is firstly operated by the driving module 1 and then switched to the driving module 4 for operation.
As shown in fig. 5, in a driving mode of the gate driver of the silicon carbide MOSFET according to the present invention, at time t0, the PWM driving signal is high and the circuit has no short circuit fault, and SW1 of the driving module 1 applies u1 voltage to the gate of the silicon carbide MOSFET through the driving resistor R1. The gate voltage of the silicon carbide MOSFET rises to U1. At time t1 the PWM drive signal goes low and the circuit has no short circuit fault, SW1 of drive module 1 is open, SW2 of drive module 2 is closed, and u2 voltage is applied to the gate of the silicon carbide MOSFET through drive resistor R2. The gate voltage of the silicon carbide MOSFET rises from U1 to U2. At time t2, the PWM driving signal is at low level, the circuit has no short circuit fault, SW2 of the driving module 2 is opened, SW3 of the driving module 3 is closed, driving voltage is applied to the gate through the driving electron R3, and the gate voltage is changed from U2 to U3. the time t0 to t1 is set according to the parameters and time application of the silicon carbide MOSFET. t0 to t1 are the first conductive states described in the invention, and t1 to t2 are the second conductive states described in the invention.
As shown in fig. 5, in a driving mode of the gate driver of the silicon carbide MOSFET according to the present invention, a short circuit signal appears at time t4, SW2 of the driving module 2 is opened, SW1 of the driving module 1 is closed to apply a voltage U1 to the gate of the silicon carbide MOSFET through the driving resistor R1, the voltage of the gate is rapidly reduced to U1, the driving control maintains the time from U1 to t5, at this time, SW1 of the driving module 1 is opened, SW3 of the driving module 3 is closed to apply a voltage U3 to the gate of the silicon carbide MOSFET through R3. The silicon carbide MOSFET gate will maintain the level of U3 until the fault signal is removed. the time from t4 to t5 is set according to the parameters and time application of the silicon carbide MOSFET.
As shown in fig. 6, in a driving mode of the gate driver of the silicon carbide MOSFET according to the present invention, at time t0, the PWM driving signal is high and the circuit has no short circuit fault, SW1 of the driving module 1 is closed to apply u1 voltage to the gate of the silicon carbide MOSFET through the driving resistor R1. The gate voltage of the silicon carbide MOSFET rises to U1. The silicon carbide MOSFET is operated in a first on state and a short circuit occurs at time t1, SW1 of the drive module 1 is opened, SW4 of the drive module 4 is closed and U4 is applied to the gate through the drive resistor R4. In order to realize that the soft off resistor R4 has a larger resistance value, the voltage of the gate electrode is changed to U4 at the time t2 when U1 falls to be slower than the normal off of U4, the SW4 of the driving module 4 is disconnected at the time t2, and the SW3 of the driving module 3 applies U3 to the gate electrode of the silicon carbide MOSFET through the driving resistor R3.
Fig. 7 shows a driving mode of the gate driver of the silicon carbide MOSFET according to the present invention, in which the PWM driving signal is high at time t0 and the circuit has no short circuit fault, SW1 of the driving module 1 is closed to apply u1 voltage to the gate of the silicon carbide MOSFET through the driving resistor R1. The gate voltage of the silicon carbide MOSFET rises to U1. The silicon carbide MOSFET works in a first on state, and a short circuit occurs at the time t1, the SW1 of the driving module 1 is opened, the SW3 of the driving module 3 is closed, U3 is added to the grid through the driving resistor R3, and the grid voltage is rapidly reduced to U3.
In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.

Claims (7)

1. The grid driver of the silicon carbide MOSFET is characterized by comprising a driving logic control circuit, a short-circuit fault detection circuit, a driving module 1, a driving module 2, a driving module 3 and a driving module 4;
one end of the driving logic control circuit receives the PWM driving signal and outputs the working state of the driver, and the other end of the driving logic control circuit is respectively connected with the short-circuit fault detection circuit, the driving module 1, the driving module 2, the driving module 3 and the driving module 4, and the driving logic control circuit controls the driving module 1, the driving module 2, the driving module 3 and the driving module 4 according to the PWM driving signal and the signals of the short-circuit fault detection circuit;
the short circuit fault detection circuit is also connected with the silicon carbide MOSFET and the driving logic control circuit respectively and is used for detecting short circuit and overcurrent signals of the silicon carbide MOSFET and transmitting the short circuit or overcurrent signals to the driving logic control circuit;
the driving module 1 comprises a driving voltage source u1, a driving resistor R1 and a switching device SW1; the driving module 1 opens or closes the switching device SW1 according to a control instruction of the driving logic control circuit, and adds the voltage of the voltage source u1 to the grid electrode of the MOSFET through the driving resistor or cuts off the connection between the voltage source u1 and the grid electrode of the MOSFET;
the driving module 2 comprises a driving voltage source u2, a driving resistor R2 and a switching device 2; the driving module 2 opens or closes the switching device SW2 according to a control instruction of the driving logic control circuit, and adds the voltage of the voltage source u2 to the grid electrode of the MOSFET through the driving resistor or cuts off the connection between the voltage source u2 and the grid electrode of the MOSFET;
the driving module 3 comprises a driving voltage source u3, a driving resistor R3 and a switching device SW3; the driving module 1 opens or closes the switching device SW3 according to a control instruction of the driving logic control circuit, and adds the voltage of the voltage source u3 to the grid electrode of the MOSFET through the driving resistor or cuts off the connection between the voltage source u3 and the grid electrode of the MOSFET;
the driving module 4 comprises a driving voltage source u4, a driving resistor R4 and a switching device SW4; the driving module 4 opens or closes the switching device SW4 according to a control instruction of the driving logic control circuit, and adds the voltage of the voltage source u4 to the grid electrode of the MOSFET through the driving resistor or cuts off the connection between the voltage source u4 and the grid electrode of the MOSFET;
each driving module sets the voltage of a voltage source and the resistance value of a driving resistor in the driving module according to the requirement;
the driving module 1, the driving module 2, the driving module 3 and the driving module 4 are used for controlling the voltage of the grid electrode of the silicon carbide MOSFET, any one of the driving modules is configured for controlling the grid electrode voltage U1 in the first on state, any one of the driving modules is configured for controlling the grid electrode voltage U2 in the second on state, any one of the driving modules is configured for controlling the grid electrode voltage U3 at the turn-off moment, and any one of the driving modules is configured for controlling the soft turn-off grid electrode voltage U4 at the short circuit moment.
2. A gate driver for a silicon carbide MOSFET according to claim 1 wherein the drive module is configured to control the first on-state gate voltage U1,
for controlling the switching of the silicon carbide MOSFET gate from the gate voltage U3 at the turn-off time to the first on-state gate voltage U1 and maintaining the first on-state gate voltage U1;
the control circuit can also be used for switching from the second conduction state grid voltage U2 to the first conduction state grid voltage U1 after the control grid is short-circuited;
the voltage of the driving module is lower than the voltage of the second conduction state grid voltage U2 driving module, so that the first conduction state short-circuit current is smaller than the second conduction state short-circuit current.
3. The gate driver of a silicon carbide MOSFET of claim 1 wherein the drive module for controlling the second on-state gate voltage U2 is configured to control the switching of the silicon carbide MOSFET gate from the first on-state gate voltage U1 to the second on-state gate voltage U2 and to maintain the gate voltage at the second on-state time;
may also be used to control the transition of the silicon carbide MOSFET gate from the off-time gate voltage U3 to the second on-state gate voltage U2 and maintain the second on-state gate voltage U2.
4. A gate driver for a silicon carbide MOSFET according to claim 1 wherein said drive module for controlling the off gate voltage U3 is adapted to control the change of the silicon carbide MOSFET gate from the first on state gate voltage U1 to the off time gate voltage U3 and to maintain the off time gate voltage U3;
the method can also be used for controlling the change of the grid electrode of the silicon carbide MOSFET from the second on-state grid voltage U2 to the grid voltage U3 at the turn-off moment, and controlling the change of the grid electrode of the silicon carbide MOSFET from the soft turn-off grid voltage at the short circuit moment to the grid voltage U3 at the turn-off moment and maintaining the grid voltage U3 at the turn-off moment.
5. A gate driver for a silicon carbide MOSFET according to claim 1 wherein the drive module configured for short-time soft-off gate voltage U4 is configured to switch the level of the gate of the silicon carbide MOSFET to short-time soft-off gate voltage U4 in the event of a short circuit.
6. A silicon carbide MOSFET gate driver according to claim 1, wherein the drive module for the first on-state gate voltage U1 is configured to drive the silicon carbide MOSFET on by closing its internal switch SW1 and applying U1 to the gate of the silicon carbide MOSFET via the drive resistor R1 to control the conduction channel of the silicon carbide MOSFET to be less than the conduction channel of the second on-state to limit the short-circuit current at which the silicon carbide MOSFET fails short-circuit at the time of the first on-state gate voltage U1.
7. A gate driver for a silicon carbide MOSFET according to claim 1 wherein the drive module for the second on-state gate voltage U2 maintains the silicon carbide MOSFET on by closing the internal switching device SW2 to apply U2 to the gate of the silicon carbide MOSFET through the internal drive resistor R2 to control the conduction channel of the silicon carbide MOSFET to be greater than the conduction channel of the first on-state to reduce the on-resistance;
the on-state grid of the silicon carbide MOSFET comprises two levels, namely a first on-state grid voltage U1 and a second on-state grid voltage U2; the gate driver of the silicon carbide MOSFET enters a first conduction state during the turn-on process, and then enters a second conduction state after being maintained for a period of time or confirming that no short circuit fault exists.
CN201910802107.0A 2019-08-28 2019-08-28 Gate driver of silicon carbide MOSFET Active CN110661515B (en)

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