CN110645735A

CN110645735A - Heat exchanger component, water heater, air conditioner and thermoelectric generation device

Info

Publication number: CN110645735A
Application number: CN201911074345.0A
Authority: CN
Inventors: 刘小江; 向立平
Original assignee: Individual
Current assignee: Huang Guohe
Priority date: 2019-11-06
Filing date: 2019-11-06
Publication date: 2020-01-03

Abstract

The invention provides a heat exchanger assembly, a water heater, an air conditioner and a temperature difference power generation device. The heat exchanger assembly comprises a first heat exchanger, a second heat exchanger, a plurality of fins and a plurality of semiconductor elements; the first heat exchanger and the second heat exchanger respectively pass through two streams of fluid which have temperature difference and flow directions which are opposite; the electric arm at the first end and the electric arm at the second end of the semiconductor element are both connected with a direct current power supply device so as to realize heat transfer between the first end face and the second end face of the semiconductor element; or the electric arm at the first end of one semiconductor element and the electric arm at the second end of the other semiconductor element are respectively connected with an electric load so as to realize thermoelectric power generation among different semiconductor elements. The heat exchanger assembly provided by the invention can be used for efficiently refrigerating and heating, can realize temperature difference to generate electricity, and can be widely applied to the fields of air conditioners, refrigerators and freezers, drying, heating, distributed generation, waste heat utilization and the like.

Description

Heat exchanger component, water heater, air conditioner and thermoelectric generation device

Technical Field

The invention relates to the technical field of semiconductor thermoelectricity, in particular to a heat exchanger assembly, a water heater, an air conditioner and a thermoelectric power generation device.

Background

With the development of economy, the energy consumption of fossil minerals is increased sharply, so that not only can energy resources be endangered, but also global greenhouse effect can be caused by excessive dependence on fossil energy resources, and the sea level of glaciers is increased, so that energy conservation and emission reduction are particularly important, the energy consumption is reduced, sustainable development is realized, and the research and development of novel environment-friendly technologies are indispensable requirements. Semiconductor refrigeration has appeared as early as 50 years in the 20 th century, and is favored by household electrical appliance manufacturers due to simple structure and rapid power-on refrigeration.

However, it was not commonly used due to the lack of performance of the material elements limited at the time. In recent years, scientific technology is rapidly developed, various technical problems of semiconductor refrigeration devices are gradually overcome, semiconductor refrigeration and heating and thermoelectric power generation materials are broken through, the figure of merit of the semiconductor refrigeration and heating materials is greatly improved, the advantage of semiconductor refrigeration is reappeared, and the semiconductor refrigeration and thermoelectric power generation materials are widely applied to various fields such as military, aerospace, agriculture and industry.

According to relevant literature data, theoretical research of semiconductor refrigeration technology is basically mature. With the development of semiconductor physics, the flying academy of semiconductor research of the former Soviet institute of science and technology finds that the doped semiconductor material has good power generation and refrigeration properties. The high attention of the scholars to the thermoelectric phenomenon is brought forward, thereby opening a new chapter of semiconductor materials, and related technologists in many countries have a lot of enthusiasm for the purpose of the high attention, and are dedicated to searching for new semiconductor material alternatives, including related technologies of preparation processes. In 2001, Venkatasubramanian et al produced the highest level of semiconductor material coefficient of 2.4 in the world today. The factors influencing the figure of merit of the semiconductor material are analyzed in great detail by spring, Wangweiyan and the like. The analytical research shows that the figure of merit of the semiconductor material is not only related to the electrode material, but also related to the cross section and the length of the electrode, the electrodes with different resistivity and thermal conductivity should have different geometric dimensions corresponding to the electrode material, and the semiconductor refrigeration device with the maximum figure of merit can be obtained only if the electrodes meet the optimal dimensions. The semiconductor refrigeration core component is a thermocouple stack, the thermoelectric conversion efficiency of the semiconductor refrigeration material of the thermocouple stack is not high at present, and is the most main reason of low efficiency of the current semiconductor refrigeration air conditioner, namely the peltier coefficient is low, the thermoelectric generation efficiency reflected by the reverse peltier seebeck effect is not high, the power generation efficiency of the currently applied related semiconductor material is generally 3% -8% under the temperature difference condition of 50 ℃, the use value of the semiconductor material is not very high, and the semiconductor refrigeration material is only suitable for being applied in a certain specific field. Therefore, the figure of merit Z for determining the quality of the thermoelectric material is particularly important. There is a distance for the semiconductor refrigeration efficiency to reach the level of mechanical refrigeration efficiency.

The discovery of the Seebeck effect and the Peltier effect of the thermoelectric material has been over 100 years old, and numerous scientists have conducted intensive and fruitful research and exploration on the Seebeck effect and the Peltier effect, and have achieved brilliant results. With the continuous and deep research, the performance of the thermoelectric material is believed to be further improved, and the thermoelectric material is certainly a new hot spot in the field of new material research in China. In the future research work of thermoelectric materials, the research focus should be on the following aspects:

(1) the method is characterized in that the Seebeck coefficient, the electric conductivity and the thermal conductivity of materials with different crystal structures are calculated by utilizing the traditional semiconductor energy band theory and the modern quantum theory, so that a novel thermoelectric material with a higher thermoelectric figure of merit ZT is searched in a wider range.

(2) The influence of the microstructure, the preparation process and the like of the material on the thermoelectric performance of the material is researched theoretically and experimentally, and particularly the research on a superlattice thermoelectric material, a nanometer thermoelectric material and a thermoelectric material film is carried out to further improve the thermoelectric performance of the material.

(3) The discovered high-performance material is researched theoretically and experimentally, so that the high-performance material achieves stable high thermoelectric performance.

(4) The preparation process research of the device is enhanced to realize the industrialization of the thermoelectric material.

From the comparison result of the refrigeration coefficients of the semiconductor refrigeration and the mechanical refrigeration, the refrigeration energy efficiency ratio of the compressor type can reach 3.8, and the refrigeration energy efficiency ratio of the semiconductor type is generally about 0.6. Analytical studies have shown that: the heat dissipation effect of the hot end of the thermopile is an important factor influencing the performance of the thermopile, and conversely, the speed of taking away the cold energy is also an important factor influencing the heating of the thermopile. In fact, it is said that pursuing an excessive temperature difference will also consume more energy, whereas its efficiency will increase. The semiconductor refrigerating device is always kept working by continuous heat exchange between the heat exchanger and the cold and heat sources.

Compare traditional compressor refrigeration efficiency semiconductor refrigeration efficiency far away from each other, if when semiconductor refrigeration material was good enough, its efficiency can be infinitely close card if the circulation efficiency. Therefore, the search for new semiconductor materials and the improvement of the thermoelectric property of the existing materials are the hot spots of the current research. If the semiconductor refrigeration performance is to reach the level of mechanical refrigeration. The dimensionless parameter ZT must reach more than 3.0, and the basic principle of optimization is to improve the electric conductivity and the Seebeck coefficient and reduce the thermal conductivity. There are three types of thermoelectric materials with excellent performance that have been found so far: the semiconductor material with the highest Z value at normal temperature is a P-type quaternary alloy, and ZT at 300K at normal temperature is 1.71. But its preparation is very difficult. In the temperature range of 200-300K, ternary solid solution alloy is applied mostly. The ZT is 2.4 at 300K, which is the first material of semiconductor refrigerator manufacturers in various countries at present. However, when the temperature is reduced to 20-200K, the thermoelectric performance of the semiconductor material is rapidly reduced, the best material in the temperature range is an N-type alloy, but the performance of the semiconductor material is fundamentally influenced by the characteristic parameters of the semiconductor material. The reduction of material dimensions and the research of organic thermoelectric materials and superlattice materials become mainstream directions for future development.

Although the semiconductor refrigeration technology develops rapidly in recent years, the defects of low refrigeration and thermoelectric generation efficiency, high operation cost, complex material manufacturing process and the like still exist, the application of the related field of the technology is greatly limited, and at present, the research on the semiconductor refrigeration and thermoelectric generation at home and abroad is mainly focused on three aspects: the research of semiconductor materials, structural design, a galvanic couple stack combination mode and a cold and hot end heat dissipation mode.

Besides the influence of the figure of merit Z of the semiconductor material, the structure of the semiconductor refrigerator greatly influences the refrigeration performance, the development of the semiconductor refrigeration is greatly limited due to the complex processing technology of the structure, and the influence factors of the structure on the semiconductor refrigeration include: the area and thickness of the refrigerating device, the thermal resistance of the welding surface, the geometric dimension of the thermoelectric arm, the flow guide resistance and the like. More and more researches are carried out to consider the contact resistance and the thermal resistance into a thermocouple model, under the condition of determining the working condition and the material, the optimal refrigerating capacity is greatly influenced by a size factor G (the ratio of the cross section area to the length of a single thermoelectric arm) of a refrigerating element, and the refrigerating effect is obvious when the G value is 0.06-0.15 cm. When the current is small (0-2A), the refrigerating capacity is reduced along with the increase of the G value, the COP under the same refrigerating capacity is reduced along with the increase of the G value, in the design of the thermoelectric module, the larger refrigerating capacity of a semiconductor can be obtained by increasing the G value, but if the G value is increased, the current value corresponding to the maximum refrigerating capacity is larger, and the efficiency of the refrigerator is poor. Structural factors such as contact thermoelectric resistance of the thermoelectric element, size of a thermoelectric arm and the like are improved, and the method is a very potential way for the performance of the existing refrigerator.

The effective ways of improving the semiconductor heating and refrigerating and the thermoelectric power generation mainly have two major factors, and the current low refrigerating efficiency becomes the greatest defect of the semiconductor refrigerating, so that the popularization and the application of the semiconductor refrigerating are limited. In order to improve the efficiency of semiconductor refrigeration, effective solutions are to be found out based on the following two influencing factors.

(1) Searching for a semiconductor material with a high figure of merit Z: research on functional heterogeneous materials, research on skutterudite and research on superlattice with quantum holes.

(2) The semiconductor refrigeration hot end heat dissipation system is optimally designed to ensure that the heat dissipation of the hot end and the cold end is in a good state.

From the history of development of semiconductor refrigeration, three stages are roughly passed: 1. in the beginning of the last century, a thermoelectric current phenomenon and a temperature abnormal phenomenon are discovered in sequence by Seker and Peltier, and researches on thermoelectric power generation and thermoelectric refrigeration are carried out, but at the moment, because the thermoelectric performance of a used metal material is poor, the efficiency of energy conversion is very low, and the thermoelectric effect is not substantially applied; 2. in the early 60 s of the last century, the semiconductor material is widely applied, so that the semiconductor material has good thermoelectric performance, and the efficiency of thermoelectric effect is greatly improved, so that thermoelectric power generation and thermoelectric refrigeration enter engineering practice; 3. after the 80 s of the last century, efforts have been made to improve the thermoelectric cooling performance of semiconductors and further develop the application field of thermoelectric cooling.

The working principle of semiconductor refrigeration is based on the peltier effect. The semiconductor thermocouple is composed of an N-type semiconductor and a P-type semiconductor. The N-type semiconductor has excess electrons and a negative temperature difference potential. The P-type semiconductor has insufficient electrons and has positive temperature difference potential; when electrons travel from the P-type to the N-type through the junction, the temperature of the junction decreases, the energy thereof necessarily increases, and the increased energy corresponds to the energy consumed by the junction. Conversely, as electrons flow from the N-type to the P-type material, the temperature of the junction increases.

Semiconductor refrigeration and heating and thermoelectric generation prospect: with the rapid development of low-temperature electronics, semiconductor refrigeration has a unique role in cooling various components and devices. The semiconductor refrigeration technology is adopted to cool the electronic element, so that the stability of the parameters of the electronic element can be effectively improved, or the signal to noise ratio is improved, and the sensitivity and the accuracy of the amplification and measurement device are improved. Semiconductor refrigerators can cool electronic devices and equipment in both direct and indirect refrigeration modes.

In order to solve the problem of lack of petroleum resources, part of vehicles use natural gas and ethanol as fuels, but compared with gasoline, the operation of an automobile air conditioner is difficult. The semiconductor refrigeration air conditioner integrates cold and heat, operates independently, can directly utilize a vehicle direct current power supply, has simple system and good compatibility with vehicles, and has better development prospect in the field of automobiles.

At present, the cost of the semiconductor refrigeration air conditioner above kilowatt level is much higher than that of the compression refrigeration air conditioner in view of the performance of the used semiconductor refrigeration material. But the cost of the hectowatt-level small air conditioner is not much different from that of a compression refrigeration air conditioner, and the small air conditioner has the characteristics of no refrigerant, convenient regulation and control, no noise and the like, and is very convenient for being used in some special small spaces; the ten-watt-level micro air conditioner has the advantages that the cost is far lower than that of a compression refrigerating device, the compression refrigerating device cannot replace the compression refrigerating device in the aspects of electronic equipment cooling and local microenvironment temperature control, the medium and small semiconductor refrigeration air conditioner can enter the civil field, and the thermoelectric power generation becomes distributed electric power production.

In the application of the semiconductor refrigeration technology, the performance of unique functions is designed according to different use requirements according to local conditions so as to expand the application field of the technology, and the field portable thermoelectric generation can bring much convenience to people, including mobile phone charging, and the thermoelectric generation can be utilized to realize the mobile phone charging. It is believed that semiconductor refrigeration technology will develop better and wider in the future.

The semiconductor refrigeration technology is widely concerned due to the characteristics of a refrigeration mode with simple structure, small volume, rapid refrigeration, long service life, zero emission, no pollution, simple maintenance, no vibration and the like, and has great development potential in the aspects of military, medical treatment, biopharmaceutical and the like.

Disclosure of Invention

The invention aims to provide a heat exchanger assembly to solve the technical problems that a semiconductor cannot efficiently refrigerate or is lack of a technical design of thermoelectric power generation in the prior art.

In order to solve the technical problem, the heat exchanger assembly provided by the invention comprises a first heat exchanger, a second heat exchanger, a plurality of fins and a plurality of semiconductor elements, wherein the fins are arranged on the first heat exchanger and the second heat exchanger, the semiconductor elements are positioned between the first heat exchanger and the second heat exchanger, and the first end surface and the second end surface of each semiconductor element are respectively attached to the fins on the first heat exchanger and the fins on the second heat exchanger; the first heat exchanger and the second heat exchanger respectively pass through two streams of fluid which have temperature difference and flow directions which are opposite;

the electric arm at the first end and the electric arm at the second end of the semiconductor element are both connected with a direct current power supply device so as to realize heat transfer between the first end face and the second end face of the semiconductor element;

or the electric arm at the first end of one semiconductor element and the electric arm at the second end of the other semiconductor element are respectively connected with an electric load so as to realize thermoelectric power generation among different semiconductor elements.

Preferably, the heat exchanger assembly further comprises a heat conducting material disposed between two adjacent fins;

the heat exchanger assembly further comprises an insulating and heat-insulating piece, wherein the insulating and heat-insulating piece is filled between two adjacent semiconductor elements and between the fins of the first heat exchanger and the second heat exchanger, and the semiconductor elements are not arranged, so that the heat conduction materials are prevented from being leaked.

Preferably, the number of the first heat exchanger and the second heat exchanger is multiple and equal;

in two adjacent first heat exchangers, the first ends of the two first heat exchangers are communicated, and the second ends of the two first heat exchangers are communicated, so that a parallel connection mode is formed, and large-scale refrigeration and heating can be realized in the parallel connection mode;

or, among three adjacent first heat exchangers, the first end of the middle first heat exchanger is communicated with the first end of one first heat exchanger through a connecting pipe, and the second end of the middle first heat exchanger is communicated with the second end of the other first heat exchanger through a connecting pipe, so as to form a series connection form, wherein the series connection structure has the advantages that the thermoelectric generation efficiency can be maximized, and the refrigeration temperature can be lower;

or the first heat exchangers are divided into two groups, and the two groups of first heat exchangers are respectively provided with one first heat exchanger used for being communicated with each other; in two adjacent first heat exchangers in the group of first heat exchangers, the first ends of the two first heat exchangers are communicated, and the second ends of the two first heat exchangers are communicated; in another group of the first heat exchangers, among three adjacent first heat exchangers, the first end of the middle first heat exchanger is communicated with the first end of one first heat exchanger through a connecting pipe, and the second end of the middle first heat exchanger is communicated with the second end of the other first heat exchanger through a connecting pipe, so that a connection form of mixing series connection and parallel connection is formed, and the advantages of the series connection and the parallel connection can be complemented;

wherein the connection form of the second heat exchanger is the same as that of the first heat exchanger.

Preferably, the first heat exchanger and the second heat exchanger are both round tube type fin heat exchangers, or flat tube type fin heat exchangers, or square tube type fin heat exchangers, or microchannel heat exchangers;

when the first heat exchanger and the heat exchanger are both round tube type heat exchangers;

the first heat exchanger and the second heat exchanger are both parallel round tube type fin heat exchangers;

or both the first heat exchanger and the second heat exchanger are coiled tube type round tube type fin heat exchangers.

In order to solve the above technical problem, the present invention further provides a water heater, including a third heat exchanger, a fluid circulation pump and the heat exchanger assembly, wherein an electrical arm at a first end and an electrical arm at a second end of one semiconductor element are both connected to a dc power supply device;

the first end of the third heat exchanger is communicated with the second end of the second heat exchanger, and the second end of the third heat exchanger is communicated with the first end of the second heat exchanger through the fluid circulating pump;

the third heat exchanger is used for collecting external heat so as to heat fluid in the third heat exchanger, and the fluid circulating pump is used for pumping the fluid in the third heat exchanger back to the third heat exchanger after the fluid passes through the second heat exchanger;

when the water heater is used, tap water is sprayed out from the spray head after passing through the first heat exchanger.

In order to solve the technical problem, the invention further provides an air conditioner, which comprises a first circulating pump, a second circulating pump, a heat exchange device and the heat exchanger assembly, wherein an electric arm at the first end and an electric arm at the second end of one semiconductor element are both connected with a direct current power supply device;

a first end of the heat exchange device is communicated with a first end of the second heat exchanger through a first circulating pump, and a second end of the heat exchange device is communicated with a second end of the second heat exchanger;

the first circulating pump is used for pumping a fluid passing through the second heat exchanger back to the second heat exchanger after the fluid is input into the heat exchange device;

the heat exchange device is used for heating or refrigerating the inflowing fluid according to actual conditions;

and the second circulating pump is used for pumping the other fluid passing through the first heat exchanger back to the first heat exchanger after being input to the end of a user.

In order to solve the above technical problem, the present invention further provides a thermoelectric power generation device, including the first circulation pump, the second circulation pump, the heat source device, the cold source device and the heat exchanger assembly, wherein an electric arm at a first end of one of the semiconductor elements and an electric arm at a second end of another one of the semiconductor elements are respectively connected to an electric load;

the first circulating pump is used for pumping a fluid passing through the second heat exchanger back to the second heat exchanger after inputting the fluid into the cold source device;

the second circulating pump is used for pumping the other fluid passing through the first heat exchanger back to the first heat exchanger after being input into the heat source device;

the cold source device is used for refrigerating the fluid flowing in from the second heat exchanger, and the heat source device is used for heating the fluid flowing in from the first heat exchanger.

In order to solve the technical problem, the invention further provides a thermoelectric power generation device, which comprises a compressor, a throttling device, an air heat exchanger device and the heat exchanger assembly, wherein an electric arm at the first end of one semiconductor element and an electric arm at the second end of the other semiconductor element are respectively connected with an electric appliance load;

the first end of the air heat exchanger device is communicated with the first end of the second heat exchanger through the compressor, and the second end of the air heat exchanger device is communicated with the second end of the first heat exchanger;

a first end of the throttling device is communicated with a first end of the first heat exchanger, and a second end of the throttling device is communicated with a second end of the second heat exchanger;

wherein the compressor is used for outputting a flow (refrigerant) passing through the second heat exchanger to the first heat exchanger after inputting the flow into the air heat exchanger device;

the throttling device is used for outputting a flow of fluid (refrigerant) passing through the first heat exchanger to the second heat exchanger after being extracted from the first heat exchanger;

the air heat exchanger device is used for absorbing heat from the outside so as to heat inflowing fluid.

In order to solve the technical problem, the invention further provides a thermoelectric power generation device, which comprises a heat source tower, an evaporator, a condenser, a first compressor, a first throttling device, a condenser circulating pump, an evaporator circulating pump and the heat exchanger assembly, wherein an electric arm at the first end of one semiconductor element and an electric arm at the second end of the other semiconductor element are respectively connected with an electric appliance load;

the two ends of the first compressor and the first throttling device are respectively communicated with the evaporator and the condenser;

the first end of the condenser is communicated with the first end of the first heat exchanger, and the second end of the condenser is communicated with the second end of the first heat exchanger through a condenser circulating pump;

the first end of the evaporator is communicated with the first end of the second heat exchanger, and the second end of the evaporator, the evaporator circulating pump, the heat source tower and the second end of the second heat exchanger are communicated in sequence;

the evaporator circulating pump is used for sequentially inputting a fluid passing through the second heat exchanger into the heat source tower and the evaporator and then pumping the fluid back to the second heat exchanger;

the condenser circulating pump is used for pumping the other fluid passing through the first heat exchanger back to the first heat exchanger after inputting the other fluid into the condenser;

the heat source tower is used for absorbing external heat so as to heat the inflow fluid.

Preferably, the thermoelectric power generation device further comprises a second compressor, an evaporative condenser and a second throttling device, the evaporator is communicated with the first compressor, the evaporative condenser is communicated with the second compressor, and the evaporator is communicated with the evaporative condenser, the second throttling device and the condenser in sequence.

In the heat exchanger assembly provided by the invention, the electric arm at the first end and the electric arm at the second end of the semiconductor element are both connected with the direct current power supply device so as to realize heat transfer between the first end face and the second end face of the semiconductor element; therefore, the semiconductor element is utilized between the fins of the two heat exchangers, high-efficiency heat transfer is realized, and high-efficiency refrigeration and heating are realized.

Or the electric arm at the first end of one semiconductor element and the electric arm at the second end of the other semiconductor element are respectively connected with an electric load so as to realize thermoelectric power generation among the semiconductor elements; therefore, the temperature difference between two end faces of the semiconductor is innovatively utilized to carry out temperature difference power generation, and the utilization rate of energy is greatly improved.

Drawings

FIG. 1 is a schematic diagram of a first embodiment of a heat exchanger assembly according to the present invention;

FIG. 2 is a schematic view of a first heat exchanger of the heat exchanger assembly shown in FIG. 1;

FIG. 3 is another design schematic of the first embodiment of the heat exchanger assembly provided by the present invention;

FIG. 4 is a schematic diagram of a second heat exchanger of the heat exchanger assembly shown in FIG. 3;

FIG. 5 is a schematic design diagram of a second embodiment of a heat exchanger assembly provided by the present invention;

FIG. 6 is a schematic design diagram of a third embodiment of a heat exchanger assembly provided by the present invention;

FIG. 7 is a schematic design diagram of a preferred embodiment of a water heater provided by the present invention;

FIG. 8 is a schematic diagram of the design of a preferred embodiment of the air conditioner of the present invention;

FIG. 9 is a schematic design diagram of a second embodiment of a thermoelectric power generation device according to the present invention;

FIG. 10 is a schematic design diagram of a thermoelectric power generation device according to a third embodiment of the present invention;

FIG. 11 is a schematic diagram showing the design of a thermoelectric power generation device according to a fourth embodiment of the present invention.

The reference numbers illustrate:

3-first heat exchanger, 4-second heat exchanger, 2-fin, 1-semiconductor element, 12-connecting pipe;

21/30-electric load, DC power supply (not shown), 6-positive pole, 7-negative pole;

a thermally conductive material (not shown), an insulating member (not shown);

9-axial fan, 10-third heat exchanger, 11-fluid circulating pump, 5-tap water, 8-spray header;

13-user end, 16-first circulation pump, 15-heat exchange device, 14-second circulation pump, 17/29-unit component;

18-compressor, 19-throttling device, 20-air heat exchanger device;

23-heat source tower, 26-evaporator, 28-condenser, 24-first compressor, 27-first throttling device, 22-condenser circulating pump, 25-evaporator circulating pump, 31-second compressor, 32-evaporative condenser and 33-second throttling device.

The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.

The invention provides a heat exchanger assembly.

First embodiment

Referring to fig. 1-4, the heat exchanger assembly includes a first heat exchanger 3, a second heat exchanger 4, a plurality of fins 2, and a plurality of semiconductor elements 1, the fins 2 are disposed on both the first heat exchanger 3 and the second heat exchanger 4, the semiconductor elements 1 are located between the first heat exchanger 3 and the second heat exchanger 4, and a first end surface and a second end surface of the semiconductor elements 1 are respectively in contact with the fins 2 on the first heat exchanger 3 and the fins 2 on the second heat exchanger 4; the first heat exchanger 3 and the second heat exchanger 4 respectively pass through two streams of fluid which have temperature difference and flow directions which are opposite;

an electric arm at the first end and an electric arm at the second end of the semiconductor element 1 are both connected with a direct current power supply device, so that heat transfer between the first end face and the second end face of the semiconductor element 1 is realized;

or, the electric arm of the first end of one semiconductor element 1 and the electric arm of the second end of the other semiconductor element 1 are respectively connected with an electric load 21, so as to realize temperature difference power generation between different semiconductor elements 1.

The principle of heat transfer of the semiconductor element 1 of the heat exchanger assembly provided by the present invention is as follows:

in this embodiment, the semiconductor element 1 is a semiconductor wafer, and the semiconductor wafer is composed of a plurality of series galvanic couple stacks and parallel galvanic couple stacks, which have the same basic structural form as the existing semiconductor refrigerating sheet.

In principle, a semiconductor cooling plate is a means of heat transfer. When a thermocouple formed by connecting an N-type semiconductor material and a P-type semiconductor material passes through a current, heat transfer can be generated between the two ends, and the heat can be transferred from one end face to the other end face, so that temperature difference is generated to form a cold end and a hot end.

When the temperature of the fluid passing through the first heat exchanger 3 is higher than the temperature of the fluid passing through the second heat exchanger 4, the first end surface and the second end surface of the semiconductor element 1 are the hot end and the cold end formed by the temperature difference.

When the temperature of the fluid passing through the first heat exchanger 3 is lower than that of the fluid passing through the second heat exchanger 4, the first end surface and the second end surface of the semiconductor element 1 are the cold end and the hot end formed by the temperature difference.

The principle of thermoelectric generation of the semiconductor element 1 of the heat exchanger assembly provided by the present invention is as follows:

seebeck effect

One eighty-two-year german seebeck found that when two different conductors are connected, if the two connections maintain different temperature differentials, a thermoelectromotive force is generated in the conductors: ES · Δ T formula: ES is a thermoelectromotive force; s is a thermoelectric power (seebeck coefficient); Δ T is the temperature difference between the junctions.

Referring to fig. 9, when the electrical arm of the first end of one semiconductor device 1 and the electrical arm of the second end of the other semiconductor device 1 are connected to an electrical load 21, respectively, based on the seebeck effect principle, an electrical potential is generated between the semiconductor devices 1 and provides a voltage and a current to the electrical load 21.

The heat exchanger assembly further comprises a heat conducting material, and the heat conducting material is arranged between two adjacent fins 2;

the heat exchanger assembly further comprises an insulating and heat-insulating piece, wherein the insulating and heat-insulating piece is filled in a space between two adjacent semiconductor elements 1 and between the fins of the first heat exchanger and the second heat exchanger, wherein the semiconductor elements are not arranged, so that the heat conduction materials are prevented from being leaked.

In this embodiment, the cross leakage between the heat conducting materials means that the heat conducting material between the two fins 2 of the first heat exchanger 3 enters between the two fins 2 of the second heat exchanger 4; alternatively, the heat conductive material between the two fins 2 of the second heat exchanger 4 enters between the two fins 2 of the first heat exchanger 3. Through preventing each the cluster between the heat conduction material leaks, can avoid the heat conduction material to leak each other, influence refrigeration and heating or thermoelectric generation's efficiency.

In this embodiment, the number of the first heat exchanger 3 and the second heat exchanger 4 may be one.

The first heat exchanger 3 and the second heat exchanger 4 can be both round tube type fin 2 heat exchangers, or flat tube type fin heat exchangers, or square tube type fin heat exchangers, or microchannel heat exchangers;

referring to fig. 2 again, as a preferred mode of the present embodiment, when the first heat exchanger 3 and the heat exchanger are both round tube type heat exchangers; the first heat exchanger 3 and the second heat exchanger 4 can be both parallel round tube type fin heat exchangers;

referring to fig. 4 again, as another preferred mode of the present embodiment, when the first heat exchanger 3 and the heat exchanger are both round tube type heat exchangers; the first heat exchanger 3 and the second heat exchanger 4 can also be both serpentine tube type round tube type fin heat exchangers.

In this embodiment, the heat conducting material between the fins of the first heat exchanger 3 and the second heat exchanger may be heat conducting oil or heat conducting grease.

Second embodiment

Referring to fig. 5, based on the heat exchanger assembly provided in the first embodiment of the present invention, the second embodiment of the present invention provides another heat exchanger assembly, which is different in that:

the number of the first heat exchanger 3 and the number of the second heat exchanger 4 are both multiple and equal;

in two adjacent first heat exchangers 3, the first ends of the two first heat exchangers 3 are communicated, and the second ends of the two first heat exchangers 3 are communicated, so that a parallel connection mode is formed, and large-scale refrigeration and heating can be realized in the parallel connection mode.

Wherein the second heat exchanger 4 is connected in the same manner as the first heat exchanger 3.

In this embodiment, one of the first heat exchangers 3 and one of the second heat exchangers 4 are defined to constitute one unit assembly 29.

Third embodiment

Referring to fig. 6, a heat exchanger assembly according to a first embodiment of the present invention is different from the heat exchanger assembly according to a third embodiment of the present invention in that:

in adjacent three first heat exchangers 3, a first end of the middle first heat exchanger 3 is communicated with a first end of one first heat exchanger 3 through a connecting pipe 12, and a second end of the middle first heat exchanger 3 is communicated with a second end of the other first heat exchanger 3 through a connecting pipe 12, so as to form a series connection form; the series connection mode can maximize the utilization of temperature difference for power generation, and can also efficiently realize low-temperature refrigeration.

In this embodiment, one of the first heat exchangers 3 and one of the second heat exchangers 4 are defined to constitute one unit assembly 17.

It is understood that in other embodiments, the first heat exchangers 3 may be divided into two groups, and one first heat exchanger 3 for communicating with each other is disposed in each of the two groups of first heat exchangers 3; in two adjacent first heat exchangers 3 in a group of the first heat exchangers 3, first ends of the two first heat exchangers 3 are communicated, and second ends of the two first heat exchangers 3 are communicated; in another group of the first heat exchangers 3, among three adjacent first heat exchangers 3, the first end of the middle first heat exchanger 3 is communicated with the first end of one first heat exchanger 3 through a connecting pipe 12, and the second end of the middle first heat exchanger 3 is communicated with the second end of the other first heat exchanger 3 through a connecting pipe 12, so as to form a connection form of mixing series connection and parallel connection;

The invention also provides a water heater

Referring to fig. 7, the water heater includes a third heat exchanger 10, a fluid circulating pump 11 and the heat exchanger assembly, wherein an electrical arm at a first end and an electrical arm at a second end of the semiconductor device 1 are both connected to a dc power supply;

a first end of the third heat exchanger 10 is communicated with a second end of the second heat exchanger 4, and the second end of the third heat exchanger 10 is communicated with the first end of the second heat exchanger 4 through the fluid circulating pump 11;

the third heat exchanger 10 is used for collecting external heat to heat the fluid in the third heat exchanger 10, and the fluid circulation pump 11 is used for pumping the fluid in the third heat exchanger 10 back to the third heat exchanger 10 after passing through the second heat exchanger 4;

when the water heater is used, tap water 5 passes through the first heat exchanger 3 and then is sprayed out from the spray header 8.

In this embodiment, the water heater may further include an axial fan 9, and the axial fan 9 is disposed toward the third heat exchanger 10.

The embodiment is a semiconductor water heater capable of recycling water vapor energy, and an electric arm at a first end and an electric arm at a second end of the semiconductor assembly are respectively connected with a positive electrode 6 and a negative electrode 7 of a direct current power supply device.

When the water heater has obtained direct current, the semiconductor element 1 will transfer the heat of the fluid inside the first heat exchanger 3 to the tap water 5 passing through the second heat exchanger 4. The tap water 5 obtains heat and then flows out from the spray header 8 to provide hot water with proper temperature for a bather.

At this time, the temperature of the fluid after transferring heat is lowered, and the fluid is pumped into the third heat exchanger 10 by the fluid circulation pump 11 to exchange heat with the water vapor outside the third heat exchanger 10.

The axial flow fan 9 is used for collecting the latent heat of water vapor, and can pump the water vapor in the bathroom into the third heat exchanger 10 to exchange heat with the fluid inside the heat exchanger.

Latent heat of water vapor is released and then condensed into liquid water to flow into a trench of a bathroom, and the cold fluid which obtains the latent heat of the water vapor enters the first heat exchanger 3 again to transfer heat to the semiconductor element 1 after the temperature of the cold fluid is increased; causing the tap water 5 to heat up.

The invention also provides an air conditioner

Referring to fig. 8, the air conditioner includes a first circulation pump 16, a second circulation pump 14, a heat exchange device 15 and the heat exchanger assembly, wherein an electrical arm at a first end and an electrical arm at a second end of the semiconductor device 1 are both connected to a dc power supply device;

a first end of the heat exchange device 15 is communicated with a first end of the second heat exchanger 4 through a first circulating pump 16, and a second end of the heat exchange device 15 is communicated with a second end of the second heat exchanger 4;

the first circulating pump 16 is used for pumping a fluid passing through the second heat exchanger 4 back to the second heat exchanger 4 after inputting a fluid into the heat exchanging device 15;

the heat exchange device 15 is used for heating or refrigerating the inflowing fluid according to actual conditions;

the second circulation pump 14 is used for pumping back the first heat exchanger 3 after inputting another fluid passing through the first heat exchanger 3 to the user end 13.

In winter, the dc power supply device supplies dc power to the semiconductor element 1 through the positive electrode 6 and the negative electrode 7; the electrically driven heat transfers the fluid heat in the first heat exchanger 3 to the fluid in the second heat exchanger 4 by the semiconductor element 1, and the semiconductor element 1 performs a heat pumping function, which is an electronic heat pumping function.

The fluid passing through the first heat exchanger 3 is driven by the second circulating pump 14 to the user terminal 13 for heat dissipation and heating, and the fluid in the second heat exchanger 4 is driven by the first circulating pump 16 to the heat exchanging device 15 for obtaining sensible heat in the air and latent heat of water vapor in the air.

In summer, the power polarity of the direct current power supply device can be changed to realize the refrigeration air conditioner.

The invention also provides a temperature difference power generation device

First embodiment

Referring to fig. 8 again, in the present embodiment, the design structure is similar to the design structure of the air conditioner.

The thermoelectric power generation device comprises the first circulating pump 16, the second circulating pump 14, a heat source device, a cold source device and the heat exchanger assembly, wherein an electric arm at a first end of one semiconductor element 1 and an electric arm at a second end of the other semiconductor element 1 are respectively connected with an electric appliance load 21;

the first circulating pump 16 is used for pumping a fluid passing through the second heat exchanger 4 back to the second heat exchanger 4 after inputting a fluid into the cold source device;

the second circulation pump 14 is used for pumping back the first heat exchanger 3 after inputting another fluid passing through the first heat exchanger 3 into the heat source device;

the cold source device is used for refrigerating the fluid flowing in from the second heat exchanger 4, and the hot source device is used for heating the fluid flowing in from the first heat exchanger 3.

In this embodiment, in fig. 8, the user terminal 13 can be regarded as a heat source device, and the heat exchanging device 15 can be regarded as a cold source device. In this embodiment, the dc power supply device is not present, and the electrical arm at the first end of one semiconductor device 1 and the electrical arm at the second end of the other semiconductor device 1 are connected to an electrical load 21, respectively.

At this time, the positive electrode 6 and the negative electrode 7 are not the direct current positive and negative electrodes for inputting electric energy, but the positive and negative electrodes for outputting electric energy. The heat source device may adopt a heat pump, and an external heat source of the heat pump includes: waste heat, ground source heat, water source heat, solar irradiance heat, nuclear fuel heat, and the calorific value of fossil energy combustion. The cold source device can use the environment as a cold source, and the cold source can be an air cooling heat dissipation device, or a cooling tower, or a device through which river water flows, and the like.

Second embodiment

Referring to fig. 9, the present invention further provides another thermoelectric power generation device.

The thermoelectric power generation device comprises a compressor 18, a throttling device 19, an air heat exchanger device 20 and the heat exchanger assembly, wherein an electric arm at a first end of one semiconductor element 1 and an electric arm at a second end of the other semiconductor element 1 are respectively connected with an electric appliance load 21;

a first end of the air heat exchanger device 20 is communicated with a first end of the second heat exchanger 4 through the compressor 18, and a second end of the air heat exchanger device 20 is communicated with a second end of the first heat exchanger 3;

a first end of the throttling device 19 is communicated with a first end of the first heat exchanger 3, and a second end of the throttling device 19 is communicated with a second end of the second heat exchanger 4;

wherein, the compressor 18 is used for outputting a flow passing through the second heat exchanger 4 to the first heat exchanger 3 after inputting the flow into the air heat exchanger device 20;

the throttling device 19 is used for extracting a flow of fluid passing through the first heat exchanger 3 from the first heat exchanger 3 and outputting the flow of fluid to the second heat exchanger 4;

the air heat exchanger device 20 is used to absorb heat from the outside to heat the incoming fluid.

In this embodiment, the fluid delivered by the compressor 18 is a refrigerant.

The refrigerant is pressed into the first heat exchanger 3 by the compressor 18 to form high-temperature and high-pressure refrigerant, the high-efficiency electrons of the semiconductor element 1 acquire molecular kinetic energy to form high-level potential, and the other side of the semiconductor element 1 forms low-level potential due to the cold surface, so that electric potential energy is generated and voltage and current are supplied to the electric load 21.

The high-temperature refrigerant transfers the kinetic energy of the high-temperature refrigerant to electrons, and the high-temperature refrigerant flows through the first heat exchangers 3 one by one after being condensed and cooled and then enters the second heat exchanger 4 through the throttling device 19 to obtain the energy of the electrons in the wafer to realize evaporation.

The enthalpy of the evaporated refrigerant is still low, because part of the heat energy is converted into electric energy, the sensible heat in the air and the latent heat of the water vapor in the air need to be continuously acquired to realize the energy input.

The refrigerant flows out of the second heat exchanger 4 and re-enters the air heat exchanger device 20 through the pipeline to obtain sensible heat in the air and latent heat of water vapor in the air so as to increase the enthalpy value of the refrigerant.

Third embodiment

Referring to fig. 10, another thermoelectric power generation device is provided in the present invention.

The thermoelectric power generation device comprises a heat source tower 23, an evaporator 26, a condenser 28, a first compressor 24, a first throttling device 27, a condenser circulating pump 22, an evaporator circulating pump 25 and the heat exchanger assembly as claimed in any one of claims 1 to 4, wherein an electric arm at a first end of one semiconductor element 1 and an electric arm at a second end of the other semiconductor element 1 are respectively connected with an electric load 21;

the first compressor 24 and the first throttling device 27 are communicated with the evaporator 26 and the condenser 28 respectively at two ends;

a first end of the condenser 28 is communicated with a first end of the first heat exchanger 3, and a second end of the condenser 28 is communicated with a second end of the first heat exchanger 3 through a condenser circulating pump 22;

a first end of the evaporator 26 is communicated with a first end of the second heat exchanger 4, and a second end of the evaporator 26, the evaporator circulating pump 25, the heat source tower 23 and a second end of the second heat exchanger 4 are communicated in sequence;

wherein, the evaporator circulating pump 25 is used for inputting a flow passing through the second heat exchanger 4 into the heat source tower 23 and the evaporator 26 in sequence, and then pumping back to the second heat exchanger 4;

the condenser circulating pump 22 is used for pumping another fluid passing through the first heat exchanger 3 back to the first heat exchanger 3 after inputting the other fluid into the condenser 28;

the heat source tower 23 is used to absorb heat from the outside to heat the incoming fluid.

In this embodiment, one of the first heat exchangers 3 and one of the second heat exchangers 4 are defined to constitute one unit assembly 29. The fluid delivered by the compressor 18 is a refrigerant.

When the heat source tower 23 receives external heat, the temperature of the entering fluid is raised, and the fluid is pumped into the evaporator 26 through the evaporator circulating pump 25 to release latent heat to the refrigerant on the other side of the evaporator 26, and then the fluid enters the second heat exchanger 4 of the unit assembly 29 to be used as a heat sink of the semiconductor element 1.

Then, the cold fluid flows into the heat source tower 23 to be sprayed to obtain external heat (the heat source tower 23 can also be used as a closed heat source tower 23, so that spraying is not needed, the external heat can be from air, or river water, or waste heat, etc.), and thus, circulation of the cold fluid is completed, and the cold fluid can be water, antifreeze, or heat conduction oil. Wherein, the antifreeze is adopted under the condition of low ambient temperature.

The refrigerant cycle is to suck the refrigerant in the evaporator 26 through the compressor 18, the refrigerant has acquired the latent heat of the cold fluid on the other side of the evaporator 26 to evaporate in the evaporator 26, and is pressed into the condenser 28 by the compressor 18 to release the latent heat to the hot fluid on the other side of the condenser 28 to be condensed into the liquid refrigerant, and the liquid refrigerant passes through the throttling device 19 and reenters the evaporator 26 to realize the circulation of the refrigerant.

The thermal fluid may be water, and after obtaining latent heat of the refrigerant in the condenser 28, the thermal fluid is driven into the plurality of unit assemblies 17 by the condenser circulation pump 22 to provide energy to the electrons of the semiconductor elements 1 in the thermal fluid fins 2.

The hot fluid in the finned tube loses part of the heat to the electrons in the semiconductor element 1 to be converted into potential energy, and then flows out of the first heat exchanger 3 of the unit assembly 17 to enter the condenser 28 again to obtain latent heat of the refrigerant on the other side of the condenser 28 to be heated, so that the hot fluid circulation process is completed.

Fourth embodiment

Referring to fig. 11, based on the third embodiment of the thermoelectric power generation device of the present invention, the present invention provides a fourth embodiment of the thermoelectric power generation device, which is different in that:

the thermoelectric power generation device further comprises a second compressor 31, an evaporative condenser 32 and a second throttling device 33, the evaporator 26 is connected with the first compressor 24, the evaporative condenser 32 is connected with the second compressor 31, the condenser 28 is sequentially connected, the evaporator 26 is connected with the first throttling device 27, the evaporative condenser 32 is connected with the second throttling device 33, and the condenser 28 is sequentially connected.

The medium temperature refrigerant cycle is composed of a second compressor 31, a condenser 28, an evaporative condenser 32 and a corresponding second throttling device 33.

The evaporative condenser 32 serves as the condenser 28 during the low temperature refrigerant cycle and as the evaporator 26 during the medium temperature refrigerant cycle for the purpose of efficiently drawing off the external heat source.

The invention relates to a semiconductor wafer heat dissipation system, which has the innovative content unrelated to semiconductor materials and performance, aims to better utilize a semiconductor wafer to realize a high-efficiency refrigeration air conditioner, realize clean heating, realize distributed production power by utilizing thermoelectric generation and have economic feasibility, better optimize a heat exchange process to improve the refrigeration and heating efficiency of the semiconductor wafer, optimally design a semiconductor cold and hot end heat dissipation system to ensure that the heat dissipation of a hot end is in a good state, further push the thermoelectric generation of the semiconductor wafer to a practical stage, and utilize the semiconductor material with a figure of merit Z as much as possible to realize the extension of various products. The conversion and transfer of low-grade heat energy to high-grade energy are realized, and the method can be widely applied to the fields of air conditioners, refrigerators and freezers, drying, heating, distributed power generation, waste heat utilization and the like.

The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims

1. A heat exchanger assembly is characterized by comprising a first heat exchanger, a second heat exchanger, a plurality of fins and a plurality of semiconductor elements, wherein the fins are arranged on the first heat exchanger and the second heat exchanger, the semiconductor elements are positioned between the first heat exchanger and the second heat exchanger, and the first end surface and the second end surface of each semiconductor element are respectively contacted with the fins on the first heat exchanger and the fins on the second heat exchanger; the first heat exchanger and the second heat exchanger respectively pass through two streams of fluid which have temperature difference and flow directions which are opposite;

2. The heat exchanger assembly of claim 1, further comprising a thermally conductive material disposed between two adjacent fins;

the heat exchanger assembly further comprises an insulating and heat-insulating piece, and the insulating and heat-insulating piece is filled in a space between two adjacent semiconductor elements and between the fins of the first heat exchanger and the second heat exchanger, wherein the semiconductor elements are not arranged, so that mutual leakage among the heat conduction materials is prevented.

3. The heat exchanger assembly of claim 1, wherein the first heat exchanger and the second heat exchanger are each present in a plurality and are equal in number;

in two adjacent first heat exchangers, the first ends of the two first heat exchangers are communicated, and the second ends of the two first heat exchangers are communicated, so that a parallel connection mode is formed;

or, in three adjacent first heat exchangers, the first end of the middle first heat exchanger is communicated with the first end of the previous first heat exchanger through a connecting pipe, and the second end of the middle first heat exchanger is communicated with the second end of the other first heat exchanger through a connecting pipe, so as to form a series connection form;

or the first heat exchangers are divided into two groups, and the two groups of first heat exchangers are respectively provided with one first heat exchanger used for being communicated with each other; in two adjacent first heat exchangers in the group of first heat exchangers, the first ends of the two first heat exchangers are communicated, and the second ends of the two first heat exchangers are communicated; in another group of the first heat exchangers, among three adjacent first heat exchangers, the first end of the middle first heat exchanger is communicated with the first end of one first heat exchanger through a connecting pipe, and the second end of the middle first heat exchanger is communicated with the second end of the other first heat exchanger through a connecting pipe, so that a connection form of mixing series connection and parallel connection is formed;

4. The heat exchanger assembly of claim 1, wherein the first heat exchanger and the second heat exchanger are both round tube fin heat exchangers, or flat tube fin heat exchangers, or square tube fin heat exchangers, or microchannel heat exchangers;

5. A water heater comprising a third heat exchanger, a fluid circulation pump and a heat exchanger assembly as claimed in any one of claims 1 to 4, wherein the electrical arm of the first end and the electrical arm of the second end of a said semiconductor element are both connected to a DC supply;

6. An air conditioner, characterized in that, the heat exchanger component of any one of claims 1-4 comprises a first circulating pump, a second circulating pump, a heat exchange device and a semiconductor element, wherein, an electric arm at a first end and an electric arm at a second end of the semiconductor element are connected with a direct current supply device;

7. A thermoelectric power generation device, comprising a first circulating pump, a second circulating pump, a heat source device, a heat sink device and the heat exchanger assembly as claimed in any one of claims 1 to 4, wherein an electric arm at a first end of one of the semiconductor elements and an electric arm at a second end of the other semiconductor element are respectively connected with an electric load;

8. A thermoelectric power generation device comprising a compressor, a throttling device, an air heat exchanger device and a heat exchanger assembly as claimed in any one of claims 1 to 4, wherein an electrical arm at a first end of one of said semiconductor elements and an electrical arm at a second end of another of said semiconductor elements are connected to an electrical load, respectively;

a first end of the air heat exchanger device is communicated with a first end of the second heat exchanger through the compressor, and a second end of the air heat exchanger device is communicated with a second end of the first heat exchanger;

the compressor is used for outputting a flow of fluid passing through the second heat exchanger to the first heat exchanger after being input into the air heat exchanger device;

the throttling device is used for pumping a fluid passing through the first heat exchanger out of the first heat exchanger and outputting the fluid to the second heat exchanger;

9. A thermoelectric power generation device, comprising a heat source tower, an evaporator, a condenser, a first compressor, a first throttling device, a condenser circulating pump, an evaporator circulating pump, and the heat exchanger assembly as claimed in any one of claims 1 to 4, wherein an electric arm at a first end of one of the semiconductor elements and an electric arm at a second end of the other of the semiconductor elements are connected to an electric load, respectively;

a first end of the evaporator is communicated with a first end of the second heat exchanger, and a second end of the evaporator, the evaporator circulating pump, the heat source tower and a second end of the second heat exchanger are communicated in sequence;

10. The thermoelectric power generation device according to claim 9, further comprising a second compressor, an evaporative condenser, and a second throttling device, wherein the evaporator, the first compressor, the evaporative condenser, the second compressor, and the condenser are sequentially communicated, and the evaporator, the first throttling device, the evaporative condenser, the second throttling device, and the condenser are sequentially communicated.