CN110635778A - Monolithic integrated duplexer - Google Patents
Monolithic integrated duplexer Download PDFInfo
- Publication number
- CN110635778A CN110635778A CN201910875873.XA CN201910875873A CN110635778A CN 110635778 A CN110635778 A CN 110635778A CN 201910875873 A CN201910875873 A CN 201910875873A CN 110635778 A CN110635778 A CN 110635778A
- Authority
- CN
- China
- Prior art keywords
- lamb wave
- wave resonator
- duplexer
- piezoelectric layer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 235000019687 Lamb Nutrition 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 10
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 238000010295 mobile communication Methods 0.000 abstract description 9
- 230000008878 coupling Effects 0.000 abstract description 7
- 238000010168 coupling process Methods 0.000 abstract description 7
- 238000005859 coupling reaction Methods 0.000 abstract description 7
- 238000009966 trimming Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 15
- 238000004891 communication Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000010897 surface acoustic wave method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The present disclosure relates to a monolithically integrated duplexer including a receiving-side bandpass filter and a transmitting-side bandpass filter fabricated on a wafer, the receiving-side bandpass filter and the transmitting-side bandpass filter including one or more lamb wave resonators and one or more FBARs. The electrode at the bottom of the piezoelectric layer of the lamb wave resonator and the closed cavity structure improve the mechanical stability and the electromechanical coupling coefficient of the whole structure. In addition, the piezoelectric layer of the lamb wave resonator is partially etched with grooves, so that the electromechanical coupling coefficient of the lamb wave resonator is improved, the bandwidths of the receiving end filter and the transmitting end filter of the duplexer are increased, the number of the duplexers can be reduced in the same frequency band, and the mobile communication equipment can be more miniaturized. In addition, through the load layers on the lamb wave resonator and the FBAR and the trimming of the thicknesses of the piezoelectric layers of the lamb wave resonator and the FBAR, the lamb wave resonator and the FBAR are easier to perform resonant frequency matching, and therefore the duplexer is more conveniently built.
Description
Technical Field
The present disclosure belongs to the field of radio frequency filters in mobile communication devices, and relates to a monolithic integrated duplexer based on a bulk acoustic wave resonator and lamb wave resonator hybrid filter.
Background
In mobile communication equipment, a filter is a component which is most important for communication. With the arrival of the 5G era, the mobile communication system is continuously developing towards the target of higher frequency and wider frequency band, and the intelligent communication equipment is developing towards miniaturization and lightness. However, as the frequency band for data communication and transmission is higher and higher, the mobile communication device is required to cover a larger frequency range, which means that more filters are required to select and transmit data to meet the communication requirement of the full frequency band, and the miniaturization of the mobile communication device is hindered. Therefore, more and more duplexers are used in mobile communication devices to realize broadband communication functions while keeping the mobile communication devices light, thin and small.
The duplexer is used for sharing the transmission and reception of signals through one antenna in a frequency division communication system, and performing processing such as filtering selection of signals through an internal transmitting end filter (Tx) and a receiving end filter (Rx). A conventional duplexer is based on a Film Bulk Acoustic Resonator (FBAR) and a Surface Acoustic Wave (SAW) Resonator, and is constructed by using an FBAR filter and a SAW filter, respectively. However, with the increasing communication frequency, the SAW filter has a central frequency of only about 2GHz due to the limitation of its own structure and the property of the surface acoustic wave, and cannot meet the communication frequency requirement of 5G. The FBAR filter center frequency can reach the 5G frequency band, but because FBAR filter frequency modulation needs to deposit one deck load layer on the electrode surface, when traditional FBAR found the duplexer, can't deposit the load layer of different thickness on a slice wafer, need make receiving terminal filter and transmitting terminal filter respectively on two slices, increased technology cost. Lamb wave resonators adjust resonance frequency through the spacing between interdigital electrodes, and a plurality of filters with different center frequencies can be realized on one wafer. By utilizing the characteristic that the lamb wave resonator is easy to tune, the manufacture of the single-chip integrated duplexer can be realized by forming filters with different center frequencies on one wafer by the lamb wave resonator and the FBAR.
In recent years, there has been a patent in which a transmitting terminal and a receiving terminal are simultaneously fabricated on the same wafer, and patent No. CN201310066933.6 by engagai et al discloses a duplexer constructed on one wafer by using a lamb wave filter and an FBAR filter. However, because the Lamb Wave resonator has only an electrode on the upper surface and no lower surface electrode, Jie zuo and c.slam et al compare the performance of the bottom electrode Lamb Wave resonator and the bottom electrode Lamb Wave resonator in the Eletrode Design of AlN Lamb Wave Resonators, and find that the effective electromechanical coupling coefficient of the bottom electrode-free Lamb Wave resonator is not high enough, which results in a narrower bandwidth of the filter formed by the bottom electrode-free Lamb Wave resonator and even a failure to build the filter. In addition, the piezoelectric layers of the resonators in the patent of Entian Yangtze et al have the same thickness and no mass loading layer, which makes it inconvenient to adjust the resonant frequency. Therefore, a structure combining an improved lamb wave resonator and an improved FBAR is required to achieve the objective of manufacturing a duplexer on a wafer and reducing the process cost.
Disclosure of Invention
The purpose of this disclosure is to provide a duplexer built with a filter based on an improved lamb wave resonator and an FBAR. The duplexer can be manufactured on a wafer, and the process cost is greatly reduced. By adding the electrode at the bottom of the piezoelectric layer of the lamb wave resonator and adopting a closed cavity structure, the mechanical stability and the electromechanical coupling coefficient of the whole structure are improved. In addition, a groove is etched on the piezoelectric layer of the lamb wave resonator, the electromechanical coupling coefficient of the lamb wave resonator is further improved, the bandwidths of a receiving end filter and a transmitting end filter of the duplexer are increased, the number of the duplexers can be reduced in the same frequency band, and therefore the mobile communication equipment can be miniaturized. The load layer is additionally arranged on the top electrode layer of the lamb wave resonator, so that the resonant frequency of the lamb wave resonator can be adjusted, the FBAR has different piezoelectric layer thicknesses through a trimming method to realize different resonant frequencies, the FBAR and the lamb wave resonator are matched with the resonant frequency more easily, and the duplexer is built more conveniently.
According to an aspect of the embodiments of the present disclosure, a monolithically integrated duplexer includes a receiving-end bandpass filter and a transmitting-end bandpass filter on the same substrate, where the receiving-end bandpass filter and the transmitting-end bandpass filter include one or more lamb wave resonators and one or more bulk acoustic wave thin-film resonators; the bulk acoustic wave thin film resonator comprises a first cavity arranged on the substrate, and a first bottom electrode, a first piezoelectric layer and a first top electrode which are sequentially arranged above the first cavity from bottom to top, wherein the first cavity is communicated with the outside through a first release hole penetrating through the first bottom electrode, the first piezoelectric layer and the first top electrode; the lamb wave resonator comprises a second cavity arranged on the substrate, and a second bottom electrode, a second piezoelectric layer and a second top electrode which are sequentially arranged above the second cavity from bottom to top, wherein the second cavity is communicated with the outside through a second release hole penetrating through the second bottom electrode, the second piezoelectric layer and the second top electrode.
In the above monolithically integrated duplexer, a mass loading layer is provided on a part of the first top electrodes of the bulk acoustic wave thin film resonators and/or a part of the second top electrodes of the lamb wave resonators.
In the above monolithically integrated duplexer, the second piezoelectric layer of the lamb wave resonator has a plurality of grooves thereon.
In the above monolithically integrated duplexer, the cross-sectional shape of the trench is circular arc, rectangular, or trapezoidal.
In the above monolithically integrated duplexer, the thicknesses of the first piezoelectric layers of the different bulk acoustic wave thin film resonators are different.
In the above monolithically integrated duplexer, the first bottom electrode, the second bottom electrode, the first top electrode, and the second top electrode are flat electrodes or interdigital electrodes.
The improved lamb wave resonator with the bottom electrode and the piezoelectric layer etched with the groove and the FBAR with the higher electromechanical coupling coefficient are used for jointly building the filter, and the duplexer constructed on one wafer is realized. The lamb wave resonator also has a loading layer, so that the resonance frequency can be adjusted under the condition of not changing the inter-digital electrode distance, and the matching with the resonance frequency of the FBAR is easier. Compared with the existing duplexer simply using an FBAR structure, the duplexer does not need two wafers, and the process cost is greatly reduced.
Drawings
The present disclosure is described in further detail below with reference to the attached drawings and the detailed description.
Fig. 1 shows a block diagram of a duplexer according to one embodiment of the present disclosure.
Figure 2 illustrates a cross-sectional view of a duplexer, according to one embodiment of the present disclosure.
Figure 3 illustrates the topology of a duplexer transmit (receive) side bandpass filter according to one embodiment of the present disclosure.
Figure 4 illustrates a top view of a duplexer transmit (receive) end bandpass filter, according to one embodiment of the present disclosure.
Figure 5 shows a cross-sectional view of the band-pass filter shown in figure 4 along the direction a-a'.
Fig. 6 shows a cross-sectional view of a duplexer transmit side (receive side) bandpass filter, according to another embodiment of the present disclosure.
FIG. 7 illustrates a cross-sectional view of a lamb wave resonator according to one embodiment of the present disclosure.
Description of reference numerals:
11-antenna 13-duplexer
12-phase shifter 14-transmitting end band-pass filter
15-receive side band pass filter 108-first release hole
21-series resonator 202-second cavity
22-parallel resonator 204-second bottom electrode
101, 201-substrate 205-second piezoelectric layer
102-first cavity 206-second top electrode
104-first bottom electrode 207-second loading layer
105-first piezoelectric layer 208-second release hole
106-first top electrode 209-trench
107-first load layer
Detailed Description
Fig. 1 shows a block diagram of a duplexer 13 according to one embodiment of the present disclosure. Fig. 2 shows a cross-sectional view of a duplexer 13 according to one embodiment of the present disclosure. As shown in fig. 1 and 2, the duplexer 13 includes an antenna 11, a phase shifter 12, and a receiving-end bandpass filter 14 and a transmitting-end bandpass filter 15 on the same substrate. The receiving-end band-pass filter 14 and the transmitting-end band-pass filter 15 each include one or more lamb wave resonators and one or more bulk acoustic wave thin-film resonators (FBARs). In one possible embodiment, as shown in fig. 3, a plurality of lamb wave resonators are connected in series to form a series resonator 21, and a plurality of FBARs are connected in parallel to form a parallel resonator 22. Alternatively, a plurality of FBARs may be connected in series and a plurality of lamb wave resonators may be connected in parallel.
Figure 4 illustrates a top view of a duplexer transmit (receive) end bandpass filter, according to one embodiment of the present disclosure. Figure 5 shows a cross-sectional view of the band-pass filter shown in figure 4 along the direction a-a'. As shown in fig. 4 and 5, the FBAR includes a first cavity 102 disposed on a substrate 101, and a first bottom electrode 104, a first piezoelectric layer 105 and a first top electrode 106 disposed above the first cavity 102 in this order from bottom to top, and the first cavity 102 communicates with the outside through a first release hole 108 penetrating the first bottom electrode 104, the first piezoelectric layer 105 and the first top electrode 106. The first bottom electrode 104 and the first top electrode 106 may be flat plate electrodes or interdigital electrodes.
The lamb wave resonator includes a second cavity 202 provided on the substrate 201, and a second bottom electrode 204, a second piezoelectric layer 205, and a second top electrode 206 provided in this order from bottom to top above the second cavity 202, and the second cavity 202 communicates with the outside through a second release hole 208 that penetrates through the second bottom electrode 204, the second piezoelectric layer 205, and the second top electrode 206. The second bottom electrode 204 and the second top electrode 206 are flat plate electrodes or interdigital electrodes. The substrate 101 and the substrate 201 are the same wafer.
Further, the first loading layer 107 may be provided on the first top electrode 106 of a part of the FBAR, and the second loading layer 207 may be provided on the second top electrode 206 of a part of the lamb wave resonator. The first and second loading layers 107 and 207 function to adjust the resonance frequencies of the FBAR and lamb wave resonators, respectively, so that the resonance frequencies are more easily matched, and thus the resonance frequency of the series resonator 21 is higher than the resonance frequency of the parallel resonator 22.
As in fig. 6, no mass loading layer may be provided on the lamb wave resonator. With continued reference to fig. 2 and 6, the thickness of the second piezoelectric layer 205 of the lamb wave resonator can be made smaller than the thickness of the first piezoelectric layer 105 of the FBAR by trimming, so that the resonant frequency can be easily adjusted when the filter is constructed, achieving the frequency matching required to construct the filter. Furthermore, if the transmitting (receiving) band pass filter has a plurality of FBARs, the thicknesses of the first piezoelectric layer 105 of the different FBARs may be different, thereby enabling the construction of filters having different center frequencies on a single wafer.
Referring to fig. 2, 5-7, the piezoelectric layer 205 of the lamb wave resonator is provided with a groove 209, which can greatly improve the electromechanical coupling coefficient of the lamb wave resonator, thereby increasing the passband bandwidth of the filter. The cross-sectional shape of the trench 209 is circular arc, rectangular, trapezoidal, etc.
The manufacturing method of the duplexer of the present disclosure is as follows:
step 1, etching a first cavity 102 and a second cavity 202 on the same wafer, where the wafer material may be Si.
Step 2, depositing a sacrificial layer on the etched cavity side of the wafer to fill the first cavity 102 and the second cavity 202, wherein the sacrificial layer may be SiO2。
Step 3, polishing to remove the sacrificial layer outside the cavities 102, 202 on the wafer.
Step 4, depositing the first bottom electrode 104 on the filled side of the first cavity 102, and depositing the second bottom electrode 204 on the filled side of the second cavity 202, wherein the material of the bottom electrodes 104, 204 may be Mo.
And 5, depositing a first piezoelectric layer 105 on the first bottom electrode 104, and depositing a second piezoelectric layer 205 on the second bottom electrode 204, wherein the material of the piezoelectric layers 105 and 205 can be an AlN thin film.
Step 6, depositing a first top electrode 106 on the first piezoelectric layer 105, and depositing a second top electrode 206 on the second piezoelectric layer 205, wherein the material of the top electrodes 106 and 206 can be Mo.
Step 7, a first loading layer 107 may be deposited on the first top electrode 106, a second loading layer 207 may be deposited on the second top electrode 206, and the material of the loading layers 107, 207 may be Al2O3。
In step 8, the second loading layer 207 and the second top electrode 206 may be etched together, so that the trenches 209 are formed on the second piezoelectric layer 205, and the second top electrode 206 and the second loading layer 207 are interdigitated.
In step 8, release holes 108, 208 are etched in the first top electrode 106 and the second top electrode 206, respectively.
Step 9, the sacrificial layer in the cavities 102, 202 is etched through the release holes 108, 208 to form the band pass filter.
According to the process, two band-pass filters are constructed and connected to be used as a transmitting end filter and a receiving end filter respectively to form the duplexer.
In the above process, if the band pass filter has a plurality of FBARs, the thicknesses of the piezoelectric layers of the different FBARs can be made different by trimming in step 5.
Claims (7)
1. A monolithic integrated duplexer is characterized by comprising a receiving end band-pass filter and a transmitting end band-pass filter which are positioned on the same substrate, wherein the receiving end band-pass filter and the transmitting end band-pass filter comprise one or more lamb wave resonators and one or more bulk acoustic wave thin-film resonators; the bulk acoustic wave thin film resonator comprises a first cavity arranged on the substrate, and a first bottom electrode, a first piezoelectric layer and a first top electrode which are sequentially arranged above the first cavity from bottom to top, wherein the first cavity is communicated with the outside through a first release hole penetrating through the first bottom electrode, the first piezoelectric layer and the first top electrode; the lamb wave resonator comprises a second cavity arranged on the substrate, and a second bottom electrode, a second piezoelectric layer and a second top electrode which are sequentially arranged above the second cavity from bottom to top, wherein the second cavity is communicated with the outside through a second release hole penetrating through the second bottom electrode, the second piezoelectric layer and the second top electrode.
2. The monolithically integrated duplexer of claim 1, wherein a portion of the first top electrodes of the bulk acoustic wave thin film resonators and/or a portion of the second top electrodes of the lamb wave resonators have a mass loading layer thereon.
3. The monolithically integrated duplexer of claim 2, wherein the second piezoelectric layer of the lamb wave resonator has a plurality of trenches thereon.
4. The monolithically integrated duplexer of claim 3, wherein the cross-sectional shape of the trench is a circular arc, or a rectangle, or a trapezoid.
5. The monolithically integrated duplexer of claim 1, wherein the second piezoelectric layer of the lamb wave resonator has a plurality of trenches thereon.
6. The monolithically integrated duplexer of claim 1, wherein the first bottom electrode, the second bottom electrode, the first top electrode, and the second top electrode are flat plate electrodes or interdigital electrodes.
7. The monolithically integrated duplexer of any one of claims 1 to 6, wherein the thicknesses of the first piezoelectric layers of different bulk acoustic wave thin film resonators are different.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910875873.XA CN110635778A (en) | 2019-09-17 | 2019-09-17 | Monolithic integrated duplexer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910875873.XA CN110635778A (en) | 2019-09-17 | 2019-09-17 | Monolithic integrated duplexer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110635778A true CN110635778A (en) | 2019-12-31 |
Family
ID=68972742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910875873.XA Pending CN110635778A (en) | 2019-09-17 | 2019-09-17 | Monolithic integrated duplexer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110635778A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112187210A (en) * | 2020-09-30 | 2021-01-05 | 诺思(天津)微***有限责任公司 | Filter packaging structure, multiplexer and communication equipment |
| CN112260656A (en) * | 2020-10-19 | 2021-01-22 | 广东广纳芯科技有限公司 | Lamb wave resonator and method for manufacturing the same |
| CN112332797A (en) * | 2020-10-29 | 2021-02-05 | 广东广纳芯科技有限公司 | Lamb wave resonator and method for manufacturing the same |
| CN112422101A (en) * | 2021-01-21 | 2021-02-26 | 中芯集成电路制造(绍兴)有限公司 | Electronic device and forming method thereof |
| CN112532206A (en) * | 2020-12-16 | 2021-03-19 | 武汉大学 | Duplexer |
| CN113037246A (en) * | 2021-02-08 | 2021-06-25 | 苏州汉天下电子有限公司 | Duplexer, manufacturing method thereof and multiplexer |
| CN113810014A (en) * | 2021-09-23 | 2021-12-17 | 武汉敏声新技术有限公司 | Interdigital bulk acoustic wave resonator and filter |
| CN116248072A (en) * | 2022-12-29 | 2023-06-09 | 上海馨欧集成微电有限公司 | Acoustic wave filter and signal processing circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4353046A (en) * | 1980-11-04 | 1982-10-05 | R F Monolithics, Inc. | Surface acoustic wave device with reflectors |
| US20130271238A1 (en) * | 2012-04-13 | 2013-10-17 | Taiyo Yuden Co., Ltd. | Filter device, manufacturing method for filter device, and duplexer |
| CN108540105A (en) * | 2018-04-11 | 2018-09-14 | 武汉大学 | Rf-resonator structure |
-
2019
- 2019-09-17 CN CN201910875873.XA patent/CN110635778A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4353046A (en) * | 1980-11-04 | 1982-10-05 | R F Monolithics, Inc. | Surface acoustic wave device with reflectors |
| US20130271238A1 (en) * | 2012-04-13 | 2013-10-17 | Taiyo Yuden Co., Ltd. | Filter device, manufacturing method for filter device, and duplexer |
| CN108540105A (en) * | 2018-04-11 | 2018-09-14 | 武汉大学 | Rf-resonator structure |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112187210A (en) * | 2020-09-30 | 2021-01-05 | 诺思(天津)微***有限责任公司 | Filter packaging structure, multiplexer and communication equipment |
| CN112187210B (en) * | 2020-09-30 | 2021-12-28 | 诺思(天津)微***有限责任公司 | Filter packaging structure, multiplexer and communication equipment |
| CN112260656A (en) * | 2020-10-19 | 2021-01-22 | 广东广纳芯科技有限公司 | Lamb wave resonator and method for manufacturing the same |
| CN112332797A (en) * | 2020-10-29 | 2021-02-05 | 广东广纳芯科技有限公司 | Lamb wave resonator and method for manufacturing the same |
| CN112332797B (en) * | 2020-10-29 | 2024-02-02 | 广东广纳芯科技有限公司 | Lamb wave resonator and method of manufacturing the same |
| CN112532206A (en) * | 2020-12-16 | 2021-03-19 | 武汉大学 | Duplexer |
| CN112422101A (en) * | 2021-01-21 | 2021-02-26 | 中芯集成电路制造(绍兴)有限公司 | Electronic device and forming method thereof |
| CN112422101B (en) * | 2021-01-21 | 2021-04-30 | 中芯集成电路制造(绍兴)有限公司 | Electronic device and forming method thereof |
| CN113037246A (en) * | 2021-02-08 | 2021-06-25 | 苏州汉天下电子有限公司 | Duplexer, manufacturing method thereof and multiplexer |
| CN113810014A (en) * | 2021-09-23 | 2021-12-17 | 武汉敏声新技术有限公司 | Interdigital bulk acoustic wave resonator and filter |
| CN116248072A (en) * | 2022-12-29 | 2023-06-09 | 上海馨欧集成微电有限公司 | Acoustic wave filter and signal processing circuit |
| CN116248072B (en) * | 2022-12-29 | 2024-04-02 | 上海馨欧集成微电有限公司 | Acoustic wave filter and signal processing circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110635778A (en) | Monolithic integrated duplexer | |
| EP1726093B1 (en) | Coupled baw resonator based duplexers | |
| US7616079B2 (en) | Bulk acoustic wave resonator and circuit comprising same | |
| US9831851B2 (en) | BAW component, lamination for a BAW component, and method for manufacturing a BAW component | |
| US7106148B2 (en) | Branching filter and communication device | |
| CN104253592B (en) | Duplexer | |
| US8164398B2 (en) | Resonator, filter and electronic device | |
| EP1253713A2 (en) | Controlled effective coupling coefficients for film bulk acoustic resonators | |
| US8941450B2 (en) | Acoustic wave device having a frequency control film | |
| CN103138032A (en) | Duplexer | |
| WO2005076473A1 (en) | Surface acoustic wave filter and antenna common unit employing it | |
| US9866201B2 (en) | All-acoustic duplexers using directional couplers | |
| US20220407494A1 (en) | Acoustic wave device and method of manufacturing the same | |
| CN110995199B (en) | Duplexer | |
| CN114884480B (en) | Method for forming surface acoustic wave resonator | |
| CN112532206A (en) | Duplexer | |
| KR20050044283A (en) | Piezoelectric device, antenna duplexer, and method of manufacturing piezoelectric resonators used therefor | |
| JP2004015079A (en) | Piezoelectric filter and electronic component having same | |
| CN112042119A (en) | Electroacoustic filter, multiplexer and method for manufacturing electroacoustic filter | |
| Schmidhammer et al. | Design flow and methodology on the design of BAW components | |
| US11984875B2 (en) | Radio frequency multiplexer | |
| JP2005160056A (en) | Piezoelectric device, antenna duplexer and method of manufacturing piezoelectric resonators used therefor | |
| Heinze et al. | 3.8/spl times/3.8 mm/sup 2/PCS-CDMA duplexer incorporating thin film resonator technology | |
| KR100446724B1 (en) | Thinfilm bulk acoustic resonator and bandpass filter/duplexer using the thinfilm bulk acoustic resonator | |
| CN217721148U (en) | Bulk acoustic wave duplexer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20201222 Address after: No.01, 4th floor, building D7, phase 3, Wuhan Software New Town, No.9 Huacheng Avenue, Donghu New Technology Development Zone, Wuhan City, Hubei Province, 430000 Applicant after: Wuhan Minsheng New Technology Co.,Ltd. Address before: 430072 Hubei Province, Wuhan city Wuchang District of Wuhan University Luojiashan Applicant before: WUHAN University |
|
| TA01 | Transfer of patent application right |