CN110634639A - Method for regulating magnetic property of diluted magnetic semiconductor and its product - Google Patents
Method for regulating magnetic property of diluted magnetic semiconductor and its product Download PDFInfo
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- CN110634639A CN110634639A CN201910803368.4A CN201910803368A CN110634639A CN 110634639 A CN110634639 A CN 110634639A CN 201910803368 A CN201910803368 A CN 201910803368A CN 110634639 A CN110634639 A CN 110634639A
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- magnetic semiconductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
- H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
- H01F1/404—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of III-V type, e.g. In1-x Mnx As
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
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Abstract
The invention discloses a method for adjusting the magnetic property of a diluted magnetic semiconductor and a product thereof, the adjusting method is simple and easy to realize, the diluted magnetic semiconductor material is bombarded by He ion beams, and the Fermi level of the material is adjusted and controlled by generating electronic defects in the diluted magnetic semiconductor material by the ion beams, so that the magnetic moment strength and the Curie temperature of the material are changed. By continuously changing the injection flux of the He ion beam, the electron defect density in the material can be freely controlled, so that the expected target of continuously regulating and controlling magnetism and Curie temperature is achieved, the regulated Curie temperature and magnetic moment strength range is wide, the regulation change is obvious, and the method is suitable for large-scale industrial application. The diluted magnetic semiconductor product obtained by the method for adjusting the magnetic property of the diluted magnetic semiconductor can keep a good single crystal epitaxial structure, has no second phase and amorphous structure generated by strip decomposition, can continuously control the Curie temperature and the magnetic strength, has good comprehensive performance, and is beneficial to wide popularization and application.
Description
Technical Field
The invention belongs to the technical field of materials, and particularly relates to a method for adjusting the magnetic properties of (In, Mn) As and (Ga, Mn) P diluted magnetic semiconductors and a product thereof.
Background
The diluted magnetic semiconductor is a novel magnetic functional material, and is a semiconductor material which realizes the coupling of magnetoelectric properties by utilizing the coupling of hole carriers and localized magnetic moments in the semiconductor material. When the conventional semiconductor material is subjected to substitutional doping by a small amount of magnetic elements, hole carriers in a valence band in the semiconductor and the doped magnetic elements are subjected to exchange coupling, so that the material is ferromagnetic. The diluted magnetic semiconductor material thus exhibits the dual properties of both magnetic and semiconductor materials, i.e., is selected as one of the key materials for spin quantum devices. The material has the advantages of non-volatile storage, controllability and matching with the prior semiconductor technology, so that the material is widely concerned. According to the physical characteristics of carrier coupling ferromagnetism in the diluted magnetic semiconductor, the ferromagnetic performance of the diluted magnetic semiconductor can be changed through the regulation and control of carrier concentration, such as grid bias regulation, low-temperature long-time annealing to reduce defect compensation, acceptor element doping and the like. The method in which the acceptor element is doped is limited by the growth conditions of the sample, and the thickness of the sample required for gate bias control is limited to less than 10 nm. Therefore, the search for a regulating and controlling means for freely regulating the magnetic performance of the diluted magnetic semiconductor has become a key research direction in the field.
The key to find the technology for adjusting the magnetic performance of the diluted magnetic semiconductor is to find a technology which can adjust and control the carrier concentration in the semiconductor and can keep the single crystal epitaxial structure of the material. Firstly, the method needs to have the characteristic of strong carrier concentration adjusting capability, and can adjust and control the material in a wider carrier concentration range. And the conditioning process needs to ensure as much as possible the single crystal epitaxial structural properties of the semiconductor material without destroying its structure, for example, at relatively low temperatures (room temperature) to prevent the rare magnetic semiconductor material from compositional segregation due to thermal effects. Therefore, a method for adjusting the magnetic performance of the diluted magnetic semiconductor, which is suitable for large-scale industrial application, has wide Curie temperature and magnetic moment intensity range and obvious adjustment change, is needed in the world.
Disclosure of Invention
In view of the above-mentioned shortcomings, it is an object of the present invention to provide a method for adjusting the magnetic performance of a diluted magnetic semiconductor. The Curie temperature and the magnetic moment strength adjusted by the method have wide range and obvious adjustment change, and are suitable for large-scale industrial application.
It is another object of the present invention to provide a diluted magnetic semiconductor product obtained by the method for adjusting the magnetic properties of diluted magnetic semiconductor, which can maintain a good single crystal epitaxial structure and whose curie temperature and magnetic strength can be continuously controlled.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
a method for regulating the magnetic performance of a diluted magnetic semiconductor utilizes He ion beams to bombard the diluted magnetic semiconductor material, the Curie temperature and the magnetic strength of the diluted magnetic semiconductor material are gradually changed along with the increase of the dosage of the He ion beams, and the injection dosage of the He ion beams is continuously controlled to control the density of electronic defects generated in the diluted magnetic semiconductor material, so that the aim of continuously regulating and controlling the magnetism and the Curie temperature is achieved, meanwhile, the regulated diluted magnetic semiconductor material is ensured to keep a good epitaxial single crystal structure, and a second phase and an amorphous structure thereof generated by strip decomposition are avoided.
As a preferable scheme of the invention, the method specifically comprises the following steps:
(1) soaking the diluted magnetic semiconductor material in acetone for cleaning, and then taking out and drying;
(2) fixing the soft-dry diluted magnetic semiconductor material on an aluminum substrate by using a conductive adhesive tape;
(3) placing the diluted magnetic semiconductor material fixed on the substrate in a target chamber of an accelerator for vacuumizing, adjusting an ion source to He, setting the acceleration voltage to be 1-100 keV, and setting the temperature to be room temperature;
(4) and (4) taking out the diluted magnetic semiconductor material after the step (3), and cleaning the conductive adhesive tape by using acetone to obtain the diluted magnetic semiconductor product.
Preferably, the ultrasonic cleaning is adopted in the step (1) for 8-15 minutes, and then the product is taken out and dried by nitrogen.
As a preferred aspect of the present inventionThe ion source injection flux in the step (3) is preferably adjusted to be 0-5 x 1013/cm2In the meantime.
In a preferred embodiment of the present invention, the diluted magnetic semiconductor material is any one of (In, Mn) As and (Ga, Mn) P. The concentration of Mn in the diluted magnetic semiconductor material is 1-10%.
In a preferred embodiment of the present invention, the diluted magnetic semiconductor material is a diluted magnetic semiconductor thin film.
A diluted magnetic semiconductor product obtained by adopting the method for adjusting the magnetic property of the diluted magnetic semiconductor.
The invention has the beneficial effects that: the adjusting method is simple and easy to realize, the dilute magnetic semiconductor material is bombarded by the He ion beam, and the Fermi level of the material is adjusted and controlled by generating electronic defects in the dilute magnetic semiconductor material by the ion beam, so that the strength of the magnetic moment of the material and the Curie temperature of the material are changed. By continuously changing the injection flux of the He ion beam, the electron defect density in the material can be freely controlled, so that the expected target of continuously regulating and controlling magnetism and Curie temperature is achieved, the regulated Curie temperature and magnetic moment strength range is wide, the regulation change is obvious, and the method is suitable for large-scale industrial application. The diluted magnetic semiconductor product obtained by the method for adjusting the magnetic property of the diluted magnetic semiconductor can keep a good single crystal epitaxial structure, has no second phase and amorphous structure generated by strip decomposition, can continuously control the Curie temperature and the magnetic strength, has good comprehensive performance, and is beneficial to wide popularization and application.
The present invention will be further described with reference to the following examples.
Detailed Description
Example 1:
in this embodiment, the diluted magnetic semiconductor material is (In, Mn) As. The curie temperature of (In, Mn) As was adjusted from 70K to 60K and a good single crystal epitaxial structure was maintained. Specifically, the method for adjusting the magnetic property of the diluted magnetic semiconductor comprises the following steps:
(1) soaking the (In, Mn) As diluted magnetic semiconductor film sample In acetone, ultrasonically cleaning for 8 minutes, taking out, and drying by using nitrogen;
(2) fixing the blow-dried (In, Mn) As diluted magnetic semiconductor thin film sample on an aluminum substrate by using a conductive adhesive tape;
(3) placing (In, Mn) As diluted magnetic semiconductor thin film sample fixed on substrate In target chamber of accelerator, vacuumizing, adjusting ion source to He, setting acceleration voltage to 17keV, and regulating injection flux to 5.0 × 1012/cm2The temperature is room temperature;
(4) taking out the injected (In, Mn) As diluted magnetic semiconductor film sample, cleaning the conductive adhesive tape with acetone, and taking down the sample;
the Curie temperature of the (In, Mn) As diluted magnetic semiconductor thin film sample which is adjusted to 60K from 70K, and a good single crystal epitaxial structure can be kept.
Example 2:
in this embodiment, the diluted magnetic semiconductor material is (In, Mn) As. The curie temperature of (In, Mn) As was adjusted from 70K to 32K and a good single crystal epitaxial structure was maintained. Specifically, the method for adjusting the magnetic property of the diluted magnetic semiconductor comprises the following steps:
(1) soaking the (In, Mn) As diluted magnetic semiconductor film sample In acetone, ultrasonically cleaning for 10 minutes, taking out, and drying by using nitrogen;
(2) fixing the blow-dried (In, Mn) As diluted magnetic semiconductor thin film sample on an aluminum substrate by using a conductive adhesive tape;
(3) placing (In, Mn) As diluted magnetic semiconductor thin film sample fixed on substrate In target chamber of accelerator, vacuumizing, adjusting ion source to He, setting acceleration voltage to 17keV, and regulating injection flux to 1.8 × 1013/cm2The temperature is room temperature;
(4) taking out the injected (In, Mn) As diluted magnetic semiconductor film sample, cleaning the conductive adhesive tape with acetone, and taking down the sample;
the Curie temperature of the (In, Mn) As diluted magnetic semiconductor thin film sample which is adjusted to 32K from 70K, and a good single crystal epitaxial structure can be kept.
Example 3:
in this embodiment, the diluted magnetic semiconductor material is (Ga, Mn) P. The Curie temperature of (Ga, Mn) P is adjusted from 50K to 30K, and a good single crystal epitaxial structure is maintained. Specifically, the method for adjusting the magnetic property of the diluted magnetic semiconductor comprises the following steps:
(1) soaking the (Ga, Mn) P diluted magnetic semiconductor film sample in acetone, ultrasonically cleaning for 15 minutes, taking out, and drying by using nitrogen;
(2) fixing the blow-dried (Ga, Mn) P diluted magnetic semiconductor thin film sample on an aluminum substrate by using a conductive adhesive tape;
(3) placing a (Ga, Mn) P diluted magnetic semiconductor film sample fixed on a substrate in a target chamber of an accelerator for vacuumizing, adjusting an ion source to He, setting an acceleration voltage to 6keV, and adjusting an injection flux to 2.0 multiplied by 1013/cm2The temperature is room temperature;
(4) taking out the injected (Ga, Mn) P diluted magnetic semiconductor film sample, cleaning the conductive adhesive tape by acetone, and taking down the sample;
the Curie temperature of the (Ga, Mn) P diluted magnetic semiconductor thin film sample which is subjected to regulation is regulated to 30K from 50K, and a good single crystal epitaxial structure can be maintained.
The above description is only a preferred embodiment of the present invention, and does not limit the technical scope of the present invention. Therefore, any modifications, equivalent changes and modifications made to the above embodiments according to the technical spirit of the present invention are within the scope of the technical solution of the present invention.
Claims (8)
1. A method for adjusting the magnetic property of a diluted magnetic semiconductor is characterized in that: the method comprises the steps of bombarding a diluted magnetic semiconductor material by using a He ion beam, gradually changing the Curie temperature and the magnetic strength of the diluted magnetic semiconductor material along with the increase of the dosage of the He ion beam, and continuously controlling the injection dosage of the He ion beam to control the density of electronic defects generated in the diluted magnetic semiconductor material, so that the purpose of continuously regulating and controlling the magnetism and the Curie temperature is achieved, and meanwhile, the regulated diluted magnetic semiconductor material is ensured to keep a good epitaxial single crystal structure, and a second phase and an amorphous structure thereof generated by swath decomposition do not appear.
2. The method for adjusting the magnetic properties of a diluted magnetic semiconductor according to claim 1, wherein: the method specifically comprises the following steps:
(1) soaking the diluted magnetic semiconductor material in acetone for cleaning, and then taking out and drying;
(2) fixing the soft-dry diluted magnetic semiconductor material on an aluminum substrate by using a conductive adhesive tape;
(3) placing the diluted magnetic semiconductor material fixed on the substrate in a target chamber of an accelerator for vacuumizing, adjusting an ion source to He, setting the acceleration voltage to be 1-100 keV, and setting the temperature to be room temperature;
(4) and (4) taking out the diluted magnetic semiconductor material after the step (3), and cleaning the conductive adhesive tape by using acetone to obtain the diluted magnetic semiconductor product.
3. The method of adjusting the magnetic properties of a diluted magnetic semiconductor of claim 1, wherein: and (2) ultrasonically cleaning for 8-15 minutes in the step (1), taking out, and then drying by using nitrogen.
4. The method of adjusting the magnetic properties of a diluted magnetic semiconductor of claim 1, wherein: the ion source injection flux in the step (3) is adjusted to be 0-5 x 1013/cm2In the meantime.
5. The method for regulating the magnetic properties of a diluted magnetic semiconductor according to any one of claims 1 to 4, wherein: the diluted magnetic semiconductor material is any one of (In, Mn) As and (Ga, Mn) P.
6. The method of adjusting the magnetic properties of a diluted magnetic semiconductor of claim 5, wherein: the concentration of Mn in the diluted magnetic semiconductor material is 1-10%.
7. The method of adjusting the magnetic properties of a diluted magnetic semiconductor of claim 5, wherein: the diluted magnetic semiconductor material is a diluted magnetic semiconductor film.
8. A diluted magnetic semiconductor product obtained by the method for regulating the magnetic property of the diluted magnetic semiconductor according to any one of claims 1 to 6.
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| CN201910803368.4A CN110634639A (en) | 2019-08-28 | 2019-08-28 | Method for regulating magnetic property of diluted magnetic semiconductor and its product |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113421821A (en) * | 2021-06-21 | 2021-09-21 | 广东省科学院半导体研究所 | Perovskite oxide thin film with determined magnetism and preparation method thereof with adjustable magnetism |
Citations (4)
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| CN1347138A (en) * | 2000-10-08 | 2002-05-01 | 中国科学院半导体研究所 | Heterogeneous liquid-phase epitaxial growth process of magnetic semiconductor/semiconductor |
| CN1985359A (en) * | 2004-05-18 | 2007-06-20 | Nm斯平特罗尼克公司 | Manganese doped magnetic semiconductors |
| CN101325112A (en) * | 2008-04-22 | 2008-12-17 | 南京大学 | Cadmium oxide base room-temperature rare magnetic semiconductor nano material doped with nickel ion and preparation method thereof |
| CN107523879A (en) * | 2016-06-20 | 2017-12-29 | 北京师范大学 | A kind of room-temperature ferromagnetic ZnO monocrystal thin films preparation methods of ion implanting defect induction |
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2019
- 2019-08-28 CN CN201910803368.4A patent/CN110634639A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1347138A (en) * | 2000-10-08 | 2002-05-01 | 中国科学院半导体研究所 | Heterogeneous liquid-phase epitaxial growth process of magnetic semiconductor/semiconductor |
| CN1985359A (en) * | 2004-05-18 | 2007-06-20 | Nm斯平特罗尼克公司 | Manganese doped magnetic semiconductors |
| CN101325112A (en) * | 2008-04-22 | 2008-12-17 | 南京大学 | Cadmium oxide base room-temperature rare magnetic semiconductor nano material doped with nickel ion and preparation method thereof |
| CN107523879A (en) * | 2016-06-20 | 2017-12-29 | 北京师范大学 | A kind of room-temperature ferromagnetic ZnO monocrystal thin films preparation methods of ion implanting defect induction |
Non-Patent Citations (1)
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| LIN LI等: "Tailoring the magnetism of GaMnAs films by iron irradiation", 《J.PHYS.D: APPL. PHYS.》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113421821A (en) * | 2021-06-21 | 2021-09-21 | 广东省科学院半导体研究所 | Perovskite oxide thin film with determined magnetism and preparation method thereof with adjustable magnetism |
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