CN110620329A - Terahertz saturable absorption device for quantum cascade laser - Google Patents
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- CN110620329A CN110620329A CN201910994604.5A CN201910994604A CN110620329A CN 110620329 A CN110620329 A CN 110620329A CN 201910994604 A CN201910994604 A CN 201910994604A CN 110620329 A CN110620329 A CN 110620329A
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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Abstract
The invention relates to the technical field of ultrafast optical application, in particular to a terahertz saturable absorption device for a quantum cascade laser, which comprises a substrate chip, a substrate layer and a GST film layer plated on the surface of the substrate layer, wherein the substrate chip comprises the substrate layer; the GST film layer forms a GST saturable absorption part on the surface of the substrate layer; and the driving source part is electrically connected with the basal layer and used for outputting directional voltage to drive the carrier migration in the basal layer so as to change the absorptivity of the GST saturable absorption part on the terahertz waves, so that the GST saturable absorption part can enhance the absorptivity of the low-energy terahertz waves, weaken the absorptivity of the high-energy terahertz waves and saturably absorb the terahertz waves. The terahertz saturable absorber can be better matched with a quantum cascade laser, can perform saturable absorption on terahertz, can assist the quantum cascade laser to realize narrowing of output terahertz radiation pulses, and can improve the absorption effect of terahertz waves.
Description
Technical Field
The invention relates to the technical field of ultrafast optical application, in particular to a terahertz saturable absorption device for a quantum cascade laser.
Background
The terahertz wave has a spectrum range between microwave and infrared, a wavelength range between 0.03mm and 3mm, a corresponding frequency range between 0.1THz and 10THz, and a frequency spectrum between the microwave and the infrared wave which are deeply researched. Terahertz has unique properties, because terahertz can penetrate common dielectric materials such as paper, leather, plastics, fabrics and the like, the terahertz has applications in the aspects of materials science, information science, physics, biology, medicine, military and the like. Among a plurality of terahertz radiation generation modes, a semiconductor-based terahertz Quantum Cascade Laser (QCL) becomes an important radiation source device in the field due to the characteristics of small volume, portability, high power, easiness in integration and the like.
At present, after research on terahertz wave absorption devices is lagged, the realized terahertz saturable absorber based on graphene materials and the terahertz absorber based on metamaterial (metamaterial) structures are separate devices, and the used materials are different from terahertz quantum cascade lasers greatly, so that the terahertz saturable absorber cannot be used in an on-chip integrated system based on terahertz quantum cascade laser materials.
In order to solve the above problems, chinese patent publication No. CN105703216B discloses a terahertz quantum cascade laser integrated with an absorption waveguide and a method for manufacturing the same, the quantum cascade laser including: a semi-insulating GaAs substrate; the GaAs buffer layer is positioned on the upper surface of the semi-insulating GaAs substrate; the n-type heavily doped lower contact layer is positioned on the surface of the GaAs buffer layer; the active region is positioned on the surface of the n-type heavily doped lower contact layer; the n-type heavily doped upper contact layer is positioned on the surface of the active region; the first upper electrode metal layer and the second upper electrode metal layer are positioned on the surface of the n-type heavily doped upper contact layer and are spaced by a distance L, wherein the second upper electrode metal layer is an upper electrode metal layer which can form high waveguide loss after annealing; and the lower electrode metal layers are positioned on the surface of the n-type heavily doped lower contact layer and on two sides of the active region.
In the above prior art, an electrode metal layer is added on a base material (a semi-insulating GaAs substrate) of the terahertz absorber, thereby improving the absorption efficiency of the terahertz wave. However, the terahertz absorber in the existing scheme adopts the same absorption rate to absorb terahertz of different energies (low energy and high energy), that is, either a higher absorption rate is maintained or a lower absorption rate is maintained, so that the terahertz absorber is difficult to realize saturable absorption, and the absorption effect of the terahertz absorber on terahertz waves is poor; in addition, due to the fact that the terahertz absorber is difficult to achieve saturable absorption, output pulses of the quantum cascade laser are wide, and the effect of matching with the quantum cascade laser is poor.
Disclosure of Invention
Aiming at the defects of the prior art, the technical problems to be solved by the invention are as follows: how to provide a cooperation quantum cascade laser instrument that can be better, and can carry out terahertz saturable absorption's terahertz saturable absorber to terahertz to supplementary quantum cascade laser instrument realizes that output terahertz radiation pulse narrows, and compromise and promote terahertz wave's absorption effect.
In order to solve the technical problems, the invention adopts the following technical scheme:
a terahertz saturable absorption device for a quantum cascade laser, comprising:
the substrate chip comprises a substrate layer and a GST film layer plated on the surface of the substrate layer; the GST film layer forms a GST saturable absorption part on the surface of the substrate layer;
and the driving source part is electrically connected with the basal layer and used for outputting directional voltage to drive the carrier migration in the basal layer so as to change the absorptivity of the GST saturable absorption part on the terahertz waves, so that the GST saturable absorption part can enhance the absorptivity of the low-energy terahertz waves, weaken the absorptivity of the high-energy terahertz waves and saturably absorb the terahertz waves.
In the scheme, the basal layer of the basal chip is used as a terahertz wave propagation medium, the directional voltage input by the driving source part is used as the energy for absorbing the terahertz wave, so that carriers in the basal layer are rapidly exchanged to reduce the inter-valley scattering time, the absorption rate of the GST saturable absorption part to the terahertz wave can be changed, the absorption rate of the GST saturable absorption part to the low-energy terahertz wave can be enhanced, and the terahertz wave can be saturably absorbed. In the scheme, the GST film layer (GST saturable absorption part) arranged on the surface of the substrate layer can be suitable for the quantum cascade laser, so that the terahertz saturable absorber can be better matched with the quantum cascade laser, and the narrowing of terahertz radiation pulses output by the quantum cascade laser can be realized; in addition, the GST saturable absorption part can enhance the absorption rate of low-energy terahertz waves, weaken the absorption rate of high-energy terahertz waves, and saturable absorb terahertz waves, so that the absorption effect of terahertz waves is improved. Therefore, the terahertz saturable absorber in the scheme can be better matched with the quantum cascade laser, can perform saturable absorption on terahertz, can assist the quantum cascade laser to realize the narrowing of terahertz radiation pulse output, and can improve the absorption effect of terahertz waves.
Preferably, the GST film layer is plated on a surface of the cleavage plane of the base layer to form a GST saturable absorber on the surface of the cleavage plane of the base layer.
Like this, can utilize parallel stratum basale cleavage plane to establish intracavity resonance, promote monochromatic energy density, realize stimulated emission, the photon that stimulated emission produced is transmitted in the resonant cavity and is obtained the gain, this is favorable to promoting the absorption effect to terahertz wave.
Preferably, the surface of the substrate layer has a ridge-and-groove arrangement perpendicular to the substrate layer cleavage plane, and a cascaded waveguide layer arranged perpendicular to the substrate layer cleavage plane.
Therefore, the cleavage surfaces of the basal layer are arranged at the two ends of the ridge groove, so that the two cleavage surfaces which are parallel to each other form the reflecting surface of the resonant cavity, and the cascade amplification of the terahertz waves can be realized by combining the cascade waveguide layer, thereby being beneficial to improving the absorption effect of the terahertz waves.
Preferably, the driving source unit includes a driving power source, and a positive terminal of the driving power source is electrically connected to the ground layer and a negative terminal thereof is connected to the cascade waveguide layer.
Therefore, the positive electrode of the driving power supply is electrically connected with the substrate layer, and the negative electrode of the driving power supply is connected with the cascaded waveguide layer, so that the driving power supply can output directional voltage to drive the carrier migration in the substrate layer, the change of the absorptivity of the GST saturable absorption part to the terahertz wave is facilitated, and the absorption effect of the terahertz wave is improved.
Preferably, the terahertz saturable absorption device further comprises a feedback signal acquisition part for acquiring a terahertz wave absorption result of the GST saturable absorption part;
the driving source part further comprises a feedback control circuit connected with the output end of the feedback signal acquisition part and used for generating modulation information according to the terahertz wave absorption result of the GST saturable absorption part and controlling the driving power supply to output the directional voltage with corresponding intensity through the modulation information.
Like this, gather the terahertz wave absorption result of GST saturable absorption portion through feedback signal acquisition portion, and transmit and the feedback control circuit of driving source portion, feedback control circuit generates the modulation information according to terahertz wave absorption result, the directional voltage of the intensity that control drive power supply output corresponds, make drive power supply can the dynamic adjustment drive current of output, thereby change GST saturable absorption portion to terahertz wave's absorptivity, in order to realize the reinforcing to low energy terahertz wave's absorptivity, weaken the effect to high energy terahertz wave's absorptivity, be favorable to assisting the base chip to realize the saturable absorption to terahertz wave, can promote the absorption effect to terahertz wave.
Preferably, the feedback signal acquisition part comprises an amplifier and a voltage stabilizing resistor connected with the cathode end of the amplifier; the positive terminal of the amplifier is electrically connected with the GST saturable absorption part, and the output terminal is electrically connected with the input terminal of the feedback control circuit.
Like this, gather the terahertz wave absorption result of GST saturable absorption portion through the amplifier, terahertz wave absorption result is a voltage signal in fact, then transmits feedback control circuit's input after enlargiing this voltage signal, is favorable to feedback control circuit control drive power supply work to be favorable to promoting the absorption effect to terahertz wave.
Preferably, the substrate layer is a gallium arsenide chip, high-resistance silicon, silicon nitride or graphene.
Therefore, the gallium arsenide chip, the high-resistance silicon, the silicon nitride and the graphene are high-damage materials, so that the terahertz wave can be better absorbed, and the absorption effect of the terahertz wave can be improved in an auxiliary mode.
Preferably, the GST film layer is a Ge-Sb-Te material plated on the surface of the substrate layer.
Therefore, the Ge-Sb-Te material has higher expandability and is beneficial to better plating on the surface of the substrate layer; in addition, the Ge-Sb-Te material is low in power consumption and low in energy consumption, and is beneficial to assisting the terahertz wave absorber to absorb terahertz waves better.
Preferably, the GST film layer is plated on the surface of the substrate layer by magnetron sputtering.
Thus, the GST film layer is plated on the base layer by the magnetron sputtering technology, and the magnetron sputtering method has the advantages of high film forming rate and good film adhesion.
Preferably, the thickness of the GST film layer is 10nm-10 μm.
Therefore, the thickness of 10nm-10 mu m can well assist the substrate layer to realize saturable absorption of terahertz waves on the premise of saving Ge-Sb-Te materials.
Drawings
For purposes of promoting a better understanding of the objects, aspects and advantages of the invention, reference will now be made in detail to the present invention as illustrated in the accompanying drawings, in which:
FIG. 1 is a logic block diagram of a terahertz saturable absorption device in an embodiment;
FIG. 2 is a schematic structural diagram of an exemplary terahertz saturable absorber device;
FIG. 3 is a schematic diagram of the terahertz pulse time domain in an embodiment;
FIG. 4 is a schematic diagram of a terahertz pulse frequency domain in an embodiment;
FIG. 5 is a schematic diagram of a saturation absorption curve of a terahertz wave band in an embodiment;
FIG. 6 is a schematic diagram of a surface microstructure of GST material in an embodiment.
Reference numerals in the drawings of the specification include: the optical waveguide substrate comprises a substrate chip 1, a ridge stripe groove 11, a waveguide layer 12, a GST saturable absorption part 2, a driving source part 3 and a feedback signal acquisition part 4.
Detailed Description
The following is further detailed by the specific embodiments:
example (b):
the embodiment discloses a terahertz saturable absorption device for a quantum cascade laser.
As shown in fig. 1 and 2: a terahertz saturable absorption device for a quantum cascade laser, comprising:
the substrate chip 1 comprises a substrate layer and a GST film layer arranged on the surface of the substrate layer, wherein the GST film layer is plated on the surface of the cleavage plane of the substrate layer so as to form a GST saturable absorption part 2 on the surface of the cleavage plane of the substrate layer; the GST saturable absorption portion 2 can enhance the absorption rate of the low-energy terahertz wave, weaken the absorption rate of the high-energy terahertz wave, and saturably absorb the terahertz wave.
In a specific implementation process, the substrate layer is one of a gallium arsenide chip, high-resistance silicon, silicon nitride or graphene, and in this embodiment, the substrate layer is the gallium arsenide chip; the surface of the gallium arsenide chip has a ridge-stripe trench 11 arranged perpendicular to the base layer cleavage plane, and the surface of the gallium arsenide chip also has a cascaded waveguide layer 12.
The GST film layer is formed by plating germanium antimony tellurium sulfide (Ge-Sb-Te) materials on the surface of the gallium arsenide chip, and the phase change alloy materials based on Ge-Sb-Te are mainly as follows: ge1Sb4Te7, Ge1Sb2Te4, Ge2Sb2Te3 and Ge2Sb2Te5, in this example Ge2Sb2Te 5; the GST film layer is plated on the surface of the gallium arsenide chip by a magnetron sputtering method, and the thickness of the GST film layer is 10nm-10 mu m.
And the driving source part 3 is electrically connected with the basal layer of the basal chip 1 and used for outputting directional voltage to drive the carrier migration in the basal layer so as to change the absorption rate of the GST saturable absorption part 2 on the terahertz waves, so that the GST saturable absorption part 2 can enhance the absorption rate on the low-energy terahertz waves, weaken the absorption rate on the high-energy terahertz waves and saturably absorb the terahertz waves.
In a specific implementation process, the driving source part 3 comprises a driving power supply and a feedback control circuit, wherein the positive end of the driving power supply is electrically connected with the substrate layer, and the negative end of the driving power supply is connected with the cascade waveguide layer; the feedback control circuit is used for generating modulation information according to the terahertz wave absorption result of the GST saturable absorption part 2, and controlling the drive power supply to output directional voltage with corresponding intensity through the modulation information.
And a feedback signal acquisition unit 4 connected to the GST saturable absorption unit 2 and configured to acquire a terahertz wave absorption result of the GST saturable absorption unit 2.
In the specific implementation process, the feedback signal acquisition part 4 comprises an amplifier and a voltage stabilizing resistor connected with the cathode end of the amplifier, the anode end of the amplifier is electrically connected with the GST saturable absorption part, and the output end of the amplifier is electrically connected with the input end of the feedback control circuit and used for transmitting the terahertz wave absorption result of the acquired GST saturable absorption part to the feedback control circuit.
In this embodiment, the terahertz saturable absorption device is tested through experiments.
In the experiment, the quantum cascade laser is matched with the terahertz saturable absorption device in the scheme, and the time domain and the frequency domain of the terahertz pulse obtained by the quantum cascade laser are shown in fig. 3 and fig. 4. In the experiment, a 50nm GST film layer is plated on the surface of a cleavage surface of gallium arsenide, terahertz radiation with a spectrum width of 3 THz is obtained, and meanwhile, the GST film layer also inhibits a low-order resonance mode in a quantum cascade laser, so that narrower terahertz pulse output is realized.
In order to further analyze a specific physical image, in this embodiment, a saturation absorption curve of the GST material in the terahertz wave band is determined. Specifically, the method comprises the following steps: the method comprises the steps that a pure high-resistance silicon wafer and the same silicon wafer plated with 50nmGST materials move back and forth in a space focus of a terahertz light beam, the terahertz intensity transmitted by the silicon wafer at the moment is recorded at each space position in the moving process, when the silicon wafer approaches the space focus of the terahertz wave, due to electric field enhancement, the absorption of the pure high-resistance silicon wafer to the terahertz wave is enhanced (transmission is reduced), and the terahertz intensity corresponds to a recess of a curve 1 in the vicinity of z =0 in fig. 5, while for the same high-resistance silicon wafer plated with 50nmGST materials, due to the fact that saturation absorption exists, the transmittance is improved at a high-power position in the front and at the back of the focus, and.
Through experiments, the cause of saturable absorption generated by the GST material is analyzed: 1) due to the addition of the phase change material GST, carriers in the material are rapidly exchanged after terahertz radiation so as to reduce the inter-valley scattering time, and the effects of increasing the absorption of low-energy terahertz radiation and reducing the absorption of high-energy terahertz radiation are generated; 2) terahertz causes reversible phase change of the GST material, a classic Moth-eye structure (as shown in fig. 6) is induced, the stronger the electric field at the near focus, the more the Moth-eye structure is generated, the destructive interference of terahertz waves, namely transmission enhancement, can be realized on the upper and lower surfaces of the Moth-eye structure, and the saturable absorption is finally realized.
The foregoing is merely an example of the present invention, and common general knowledge in the field of known specific structures and characteristics is not described herein in any greater extent than that known in the art at the filing date or prior to the priority date of the application, so that those skilled in the art can now appreciate that all of the above-described techniques in this field and have the ability to apply routine experimentation before this date can be combined with one or more of the present teachings to complete and implement the present invention, and that certain typical known structures or known methods do not pose any impediments to the implementation of the present invention by those skilled in the art. It should be noted that, for those skilled in the art, without departing from the structure of the present invention, several changes and modifications can be made, which should also be regarded as the protection scope of the present invention, and these will not affect the effect of the implementation of the present invention and the practicability of the patent. The scope of the claims of the present application shall be determined by the contents of the claims, and the description of the embodiments and the like in the specification shall be used to explain the contents of the claims.
Claims (10)
1. A terahertz saturable absorption device for quantum cascade laser, characterized by, includes:
the substrate chip comprises a substrate layer and a GST film layer plated on the surface of the substrate layer; the GST film layer forms a GST saturable absorption part on the surface of the substrate layer;
and the driving source part is electrically connected with the basal layer and used for outputting directional voltage to drive the carrier migration in the basal layer so as to change the absorptivity of the GST saturable absorption part on the terahertz waves, so that the GST saturable absorption part can enhance the absorptivity of the low-energy terahertz waves, weaken the absorptivity of the high-energy terahertz waves and saturably absorb the terahertz waves.
2. The terahertz saturable absorption device for a quantum cascade laser as claimed in claim 1, wherein: the GST film layer is plated on the surface of the basal layer cleavage plane to form a GST saturable absorber on the surface of the basal layer cleavage plane.
3. The terahertz saturable absorption device for a quantum cascade laser as claimed in claim 1, wherein: the surface of the base layer has a ridge and groove arrangement perpendicular to the base layer cleavage plane, and a cascaded waveguide layer arrangement perpendicular to the base layer cleavage plane.
4. The terahertz saturable absorption device for a quantum cascade laser according to claim 3, wherein: the driving source part comprises a driving power supply, the positive end of the driving power supply is electrically connected with the basal layer, and the negative end of the driving power supply is connected with the cascade waveguide layer.
5. The terahertz saturable absorption device for a quantum cascade laser according to claim 4, wherein: the feedback signal acquisition part is used for acquiring a terahertz wave absorption result of the GST saturable absorption part;
the driving source part further comprises a feedback control circuit connected with the output end of the feedback signal acquisition part and used for generating modulation information according to the terahertz wave absorption result of the GST saturable absorption part and controlling the driving power supply to output the directional voltage with corresponding intensity through the modulation information.
6. The terahertz saturable absorption device for a quantum cascade laser according to claim 5, wherein: the feedback signal acquisition part comprises an amplifier and a voltage stabilizing resistor connected with the cathode end of the amplifier; the positive terminal of the amplifier is electrically connected with the GST saturable absorption part, and the output terminal is electrically connected with the input terminal of the feedback control circuit.
7. The terahertz saturable absorption device for a quantum cascade laser as claimed in claim 1, wherein: the substrate layer is a gallium arsenide chip, high-resistance silicon, silicon nitride or graphene.
8. The terahertz saturable absorption device for a quantum cascade laser as claimed in claim 1, wherein: the GST film layer is a Ge-Sb-Te material plated on the surface of the substrate layer.
9. The terahertz saturable absorption device for a quantum cascade laser according to claim 8, wherein: and the GST film layer is plated on the surface of the substrate layer in a magnetron sputtering mode.
10. The terahertz saturable absorption device for a quantum cascade laser as claimed in claim 8, wherein: the thickness of the GST film layer is 10nm-10 μm.
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| CN114300941A (en) * | 2021-12-30 | 2022-04-08 | 北京工业大学 | Spontaneous pulse type photon cascade semiconductor laser |
| CN116031743A (en) * | 2022-11-30 | 2023-04-28 | 深圳大学 | Broadband saturable absorber and multi-soliton laser |
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