CN110610984B - 一种突触晶体管及其制备方法 - Google Patents
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Abstract
本发明提供一种突触晶体管及其制备方法，该突触晶体管包括绝缘衬底以及位于衬底上的沟道材料、源电极、栅电极和漏电极，构成平面三端型结构，沟道材料为非晶碳膜，在沟道区域与部分栅电极区域覆盖有固态电解质，该固态电解质包含对电子绝缘的有机物载体和可移动的离子。该突触晶体管具有高稳定性、低功耗等优点，有利于实现神经形态器件应用。并且，本发明采用在衬底上直接制备非晶碳膜而形成沟道，降低了制备难度，简化了制备工艺，可实现大规模集成突触晶体管，具有良好的应用价值。
Description
技术领域
本发明涉及半导体器件领域，特别涉及一种突触晶体管及其制备方法。
背景技术
在大数据时代，传统冯·诺依曼架构的计算机难以处理日益增长的数据信息，如何提高存储和运算的效率成为人类不得不解决的难题。人脑具有极高运算效率、低运算功耗和处理复杂过程的优势，同时在生理学研究中发现大脑的学习和记忆功能的完成与突触密不可分。因此，研制具有神经突触功能的新型电子器件，对于实现神经形态计算和满足信息处理需求具有重大意义。
生物体内的突触是两个相邻神经元细胞(突触前神经元和突触后神经元)之间发生信息交换的关键，信息通过突触前神经元向突触后神经元发送神经递质而在神经元之间相互传递。近年来，以忆阻器为代表的两端型人工突触器件备受关注，能够实现生物体突触的部分功能，例如短程突触可塑性(STP)、长程突触可塑性(LTP)等，为进一步实现神经网络计算提供可能。但是，最新研究表明，鉴于其本征非线性转变特性，忆阻器难以同时实现丰富的突触可塑性模拟和良好的线性度与对称性。同时，在神经突触的学习过程中，信息的传递和学习是同时发生的，但忆阻器的两端型结构严重限制了信息传递和突触学习的同时进行。因此，探索基于新原理、新材料和新结构的新型神经形态器件受到了人们越来越多的关注。
不同于两端型忆阻器，在包含沟道材料、源电极、栅电极和漏电极的三端型突触晶体管中，信息可以通过源-漏间的沟道来传递，反馈信息可以通过栅极对突触权重进行调节，即信息的传递和突触学习是分离的，因而可以同时进行，且具有可逆性好、功耗低和近线性模拟切换等优点。三端型突触晶体管中沟道材料的选取与突触器件的性能紧密相关。在先前相关研究中，沟道材料的选择主要包括氧化物材料、二维半导体材料和有机材料。氧化物材料的阻值调控主要发生在沟道表面，因而为实现有效电阻调控需使沟道材料厚度较薄，这就对材料生长工艺提出了较高要求。同时，常用的电解质为离子液体，不利于器件的稳定性和后续集成。
二维半导体材料目前主要通过机械剥离制备，该制备工艺复杂且可控性差，不利于大规模集成应用，并且需要将制得的二维半导体材料转移至衬底表面，一方面增加了工艺步骤，另一方面转移过程中易引入杂质并且容易导致半导体材料结构发生变化，更加大了大规模集成难度。
有机沟道材料的物理和化学性质不稳定，并且与现有半导体工艺不兼容。
因此，探索基于新材料的高稳定且易于大规模集成的三端型突触晶体管是电子器件技术领域的重要技术攻关之一。
发明内容
针对上述技术现状，本发明旨在提供一种三端型突触晶体管，其性能稳定，并且易于大规模生产。
为了实现上述技术目的，本发明采用非晶碳膜作为三端型突触晶体管的沟道材料。
非晶碳膜是一种亚稳态无定型碳材料，主要由金刚石相(sp3C键)以及石墨相(sp2C键)组成。根据膜中碳原子的键合方式(C-H，C-C，C＝C)以及键合方式的比例，非晶碳膜可以分为以下几类：(1)薄膜中sp2C键含量偏高的类石墨非晶碳膜(Glc)；(2)薄膜中含有氢的类石墨非晶碳膜(Glc:H)；(3)主要含sp3键碳原子(sp3键碳原子超过60％)的四面体非晶碳膜(Tac)；(4)薄膜中含氢的四面体非晶碳膜(Tac:H)。
非晶碳膜中sp2C具有形成稳定离域π键环状结构特性，因此容易以芳香环的形式形成很小的sp2C平面团簇，因此非晶碳膜结构可以看成石墨状的sp2C团簇分布在三维的sp3C基质中。其中，sp2C决定薄膜的带隙和光学性能，sp3C决定薄膜的力学性能。非晶碳膜的团簇结构使其具有优异的可逆电致电阻性能，通过改变sp2C团簇的大小和含量可调控非晶碳膜电学和光学性质。同时非晶薄膜作为一种非晶半导体材料，其电学特性介于准金属和绝缘体之间，电阻率可在102～106Ω·cm范围内变化，介电强度在105～107V/cm之间，介电常数在5～11之间。
并且，非晶碳膜的制备工艺简单可控、成本低、设备简单、容易获得较大面积的薄膜。例如，可用沉积法在基底表面直接沉积得到非晶碳膜。
即，本发明所采用的技术方案为：一种突触晶体管，包括绝缘衬底以及位于衬底上的沟道材料、源电极、栅电极和漏电极，构成平面三端型突触晶体管，在沟道区域与部分栅电极区域覆盖有固态电解质，该固态电解质包含对电子绝缘的有机物载体和可移动的离子；其特征是：所述沟道材料为非晶碳膜。
所述衬底为绝缘材料，包括但不限于硅、二氧化硅等材料。作为优选，所述衬底是表面具有二氧化硅层的硅衬底。
所述非晶碳膜包括但不限于类石墨非晶碳膜(Glc)、含氢的类石墨非晶碳膜(Glc:H)、四面体非晶碳膜(Tac)以及含氢的四面体非晶碳膜(Tac：H)。
所述平面三端型结构是指源电极、漏电极与栅电极位于衬底同侧。
作为优选，所述非晶碳膜的厚度为5nm-50nm。
所述源电极、漏电极以及栅电极材料不限，可采用多种金属材料组合，如Pt/Ti、Au/Ti、Au/Cr等。其中上层金属厚度在20nm-100nm，下层金属厚度在5nm-20nm。
作为一种实现方式，所述固态电解质包含有机物载体与金属盐。所属有机物载体优选为有机高分子聚合物，例如聚乙烯醇、聚环氧乙烷等。所述金属盐包括但不限于高氯酸锂、高氯酸钠和硫酸镁等。
作为一种实现方式，源漏电极分别位于沟道材料的两端，与沟道材料形成欧姆接触。
本发明还提供了一种制备上述突触晶体管的方法，其特征是：包括在衬底上直接制备非晶碳膜，形成沟道的步骤。
作为一种实现方式，在衬底上制备沟道的步骤如下：
(1)在衬底上光刻定义沟道图形；
(2)沉积非晶碳膜，去除光刻胶，剥离得到沟道。
所述步骤(2)中，沉积方法不限，包括通过过滤阴极真空电弧(FCVA)沉积，或者通过磁控溅射沉积。
与现有技术相比，本发明具有如下有益效果：
(1)本发明采用非晶碳膜作为沟道材料。非晶碳膜作为一种碳基材料，具有高介电常数、高稳定性、高金属离子扩散性。因此，本发明的突触晶体管具有高稳定性等优点。
(2)非晶碳膜制备工艺简单，成本低，易大规模生产。本发明采用在衬底上直接制备非晶碳膜而形成沟道，因此大大降低了制备难度，简化了制备工艺，可大规模制备，并且可与传统CMOS工艺兼容，因此可实现大规模集成突触晶体管，具有良好的应用价值。
(3)本发明的突触晶体管结构中，通过源漏电极施加固定的电压读取沟道材料电阻值的变化，通过栅极施加脉冲电压驱动离子对沟道材料进行可逆的离子调控。本发明的突触晶体管主要利用离子的吸附和嵌入机制，使器件表现出生物突触所具有的短程突触可塑性、长程突触可塑性和双峰脉冲异化等现象，并且器件的突触可塑性可随着栅极信号的调整发生短程向长程的改变，因此可实现多种神经突触功能。同时，由于器件具备高电阻率，沟道材料非晶碳膜的阻值能够达到1010～1011Ω，大幅降低器件的工作电流，使得器件具有较低的整体功耗，有利于实现神经形态器件应用和大规模集成。
(4)本发明中，沟道材料主要由金刚石相和石墨相组成，可通过施加电场和光场改变sp2C团簇的大小和含量，从而可调控非晶碳膜的电学和光学性质，实现器件对光脉冲和电脉冲刺激的共同响应，从而能够实现联想学习等多种突触功能。
附图说明
图1是本发明实施例中三端型突触晶体管的结构示意图。
图2是本发明实施例中三端型突触晶体管的短程突触可塑性(STP)曲线。
图3是本发明实施例中三端型突触晶体管的长程突触可塑性(LTP)曲线。
图4是图3中虚线框处的放大图。
图1中的附图标记为：衬底1、沟道材料2、源电极3、漏电极4、栅电极5、固态电解质6。
具体实施方式
下面结合实施例对本发明作进一步详细描述，需要指出的是，以下所述实施例旨在便于对本发明的理解，而对其不起任何限定作用。
实施例1：
本实施例中，器件结构如图1所示，包括绝缘衬底1以及位于衬底1上的沟道材料2、源电极3、漏电极4和栅电极5，构成平面三端型突触晶体管。源电极3与漏电极4分别位于沟道材料2的两端，与沟道材料2形成欧姆接触。在沟道区域与部分栅电极区域上覆盖有固态电解质6，该固态电解质6包含对电子绝缘的有机物载体和可移动的离子。
本实施例中，衬底采用表面二氧化硅层的硅片，二氧化硅层的厚度为300nm。沟道材料为四面体非晶碳(Tac)。源电极3、漏电极4以及栅电极5均采用Pt/Ti。固态电解质包含聚环氧乙烷和高氯酸锂，聚环氧乙烷和高氯酸锂的质量比为9:1。
上述三端型突触晶体管的制备方法如下：
(1)将衬底依次放入适量的丙酮、酒精、去离子水超声清洗10分钟，取出后用氮气吹干。
(2)在衬底表面旋涂光刻胶，通过紫外光刻机曝光定义沟道图形，曝光完成后显影、烘干。
(3)利用过滤阴极真空电弧(FCVA)镀膜技术，调整仪器生长参数，在衬底表面蒸镀约10nm的四面体非晶碳膜。将蒸镀完成后的衬底置于丙酮中去胶，最后剥离，得到非晶碳膜构成的沟道。
(4)在步骤(3)处理后的衬底表面旋涂光刻胶，采用套刻工艺在沟道两端定义源漏电极图形，在同一平面不与沟道材料接触处定义栅电极图形；然后，利用电子束蒸发镀膜的方式，分别蒸镀5nm的Ti和40nm的Pt，通过去胶，剥离得到源、漏、栅电极。
(5)配置电解质液：取聚环氧乙烷1.0g、高氯酸锂0.3g、无水甲醇取15～20mL，将三者混合置于50℃恒温水浴中加热24h。利用铂丝或者探针将固态电解质液滴涂在指定的沟道区域以及栅电极区域，滴加完毕后将器件置于70℃的热板上加热3分钟，以去除电解质中的甲醇溶剂和水，得到固态电解质。
使用Keithley 4200半导体参数测量仪对上述制得的突触晶体管器件进行操作，对栅电极施加脉冲，源漏电极施加固定的电压读取沟道材料的电阻，两者同步进行。
如图2所示，在施加单个脉冲的过程中，器件沟道电流呈现突然增加的趋势；随着外加的脉冲电压消失后，沟道电流不断降低，最终回复到与初始电流相同的水平，该现象对应生物体中的短程突触可塑性(STP)。随着正向脉冲数量的增加，器件会表现出长程突触可塑性，如图3、4所示，其中图4是图3中虚线框处的放大图，从图4中可以明显看出，随着脉冲数量的增加，在栅极电压撤去之后，源漏间的电流没有回复到初始的状态，并且其电流大小是初始状态的两倍左右。同时从图2、3、4中可以看出器件的工作电流处于pA数量级，器件的整体运算功耗达到了一个极低的水平，有望用于神经网络计算。
以上所述的实施例对本发明的技术方案进行了详细说明，应理解的是以上所述仅为本发明的具体实施例，并不用于限制本发明，凡在本发明的原则范围内所做的任何修改、补充或类似方式替代等，均应包含在本发明的保护范围之内。
Claims (10)
1.一种突触晶体管，包括绝缘衬底以及位于衬底上的沟道材料、源电极、栅电极和漏电极，构成平面三端型突触晶体管，在沟道区域与部分栅电极区域覆盖有固态电解质，该固态电解质包含对电子绝缘的有机物载体和可移动的离子；其特征是：所述沟道材料为非晶碳膜。
2.如权利要求1所述的突触晶体管，其特征是：所述非晶碳膜包括类石墨非晶碳膜（Glc）、含氢的类石墨非晶碳膜（Glc:H）、四面体非晶碳（Tac）、含氢的四面体非晶碳（Tac:H）。
3.如权利要求1所述的突触晶体管，其特征是：所述非晶碳膜的厚度为5-30nm。
4.如权利要求1所述的突触晶体管，其特征是：所述固态电解质包含有机物载体与金属盐。
5.如权利要求1所述的突触晶体管，其特征是：所述有机物载体为有机高分子聚合物。
6.如权利要求5所述的突触晶体管，其特征是：所述有机高分子聚合物为聚乙烯醇、聚环氧乙烷。
7.如权利要求4所述的突触晶体管，其特征是：所述金属盐包括高氯酸锂、高氯酸钠和硫酸镁。
8.如权利要求1至7中任一权利要求所述的突触晶体管的制备方法，其特征是：包括在衬底上直接制备非晶碳膜，形成沟道的过程。
9.如权利要求8所述的突触晶体管的制备方法，其特征是：在衬底上制备沟道包括如下步骤：
（1）在衬底上光刻定义沟道图形；
（2）沉积非晶碳膜，去除光刻胶，剥离得到沟道。
10.如权利要求9所述的突触晶体管的制备方法，其特征是：所述步骤（2）中，沉积方法包括通过过滤阴极真空电弧（FCVA）沉积，或者通过磁控溅射沉积。
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