CN110601684A - Driving circuit - Google Patents
Driving circuit Download PDFInfo
- Publication number
- CN110601684A CN110601684A CN201910828700.2A CN201910828700A CN110601684A CN 110601684 A CN110601684 A CN 110601684A CN 201910828700 A CN201910828700 A CN 201910828700A CN 110601684 A CN110601684 A CN 110601684A
- Authority
- CN
- China
- Prior art keywords
- capacitor
- zener diode
- voltage source
- resistor
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 34
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 9
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 9
- 230000005669 field effect Effects 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
Landscapes
- Electronic Switches (AREA)
Abstract
The present application relates to a driving circuit, comprising: a metal oxide semiconductor field effect transistor; and a voltage source, first to fourth capacitors, a fast diode, first to third resistors, and first to third Zener diodes. The drive circuit can effectively restrain crosstalk caused by negative movement of grid voltage, is simple in structure, does not need special negative voltage source and voltage feedback, and can be achieved only by using a passive device.
Description
Technical Field
The present application relates to a driving circuit.
Background
The use of power devices has a crucial influence on switching converters, and conventional power devices made of silicon (Si) based materials are limited in use, such as low voltage class and weak high temperature resistance, and the presence of silicon carbide (SiC) materials makes the solution of the problem no longer limited to changing the device structure.
Silicon carbide (SiC) is applied in gate drive circuits of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) to achieve high switching speeds with parasitic resonance damping, gate overvoltage protection and crosstalk suppression. The crosstalk phenomenon in the half-bridge configuration refers to stray triggering of the low-side SiC MOSFET during power-on switching of the high-side SiC MOSFET and vice versa. As the voltage of the device increases in the off state, the charging current flows through its parasitic gate-drain capacitance and produces a positive spike in its gate voltage. If the voltage is above the gate threshold voltage, this voltage spike may falsely trigger the high side MOSFET, which may result in increased switching power loss and may even result in crowbar current.
For example, in the literature "l.abbatelli, c.brusca, and g.catalisano, Applicationnote: the How to fine tune your SiC MOSFET gate driver to minimum losses, STMicroelectronics co, pp.1-17, "proposes a gate drive circuit using a negatively biased gate voltage that shifts the level of the positive voltage spike and speeds the turn-off of the SiCMOSFET. The negative turn-off voltage is usually provided by an additional negative voltage source, and a phase shift circuit using a resistive element to cancel the negative voltage source is disclosed in the documents "j.wangandh.s.h.chung, a novel RCD level shift for excitation of the radial turn-on in the bridge-g configuration, ieee trans.power electron, vol.30, No.2, pp.976-984, 2015".
However, both of the above solutions are not suitable for volume optimized and cost sensitive converters due to the increased circuit complexity.
Disclosure of Invention
It is an object of the present application to provide a drive circuit to solve or mitigate at least one of the problems of the background art.
The technical scheme of the application is as follows: a driver circuit, characterized in that the driver circuit comprises:
a metal oxide semiconductor field effect transistor; and a voltage source, first to fourth capacitors, a fast diode, first to third resistors, and first to third Zener diodes, wherein an anode of the first capacitor and a cathode of the first Zener diode are connected to an anode of the voltage source, a cathode of the first capacitor and one end of the second resistor are connected to an anode of the first Zener diode, the other end of the second resistor is connected to a cathode of the fast diode, an anode of the first Zener diode is connected to one end of the first resistor, the other end of the first resistor is connected to an anode of the fast diode, the second Zener diode and the third Zener diode are connected in series in reverse, a cathode of the second Zener diode is connected to an anode of the fast diode, a cathode of the third Zener diode and a cathode of the voltage source are connected to a source of the transistor, one end of the third resistor is connected to an anode of the fast diode, the other end of the third resistor and an anode of the third capacitor are connected to a gate of the transistor, the negative electrode of the third capacitor is connected with the negative electrode of the voltage source, the positive electrode of the second capacitor and the positive electrode of the fourth capacitor are connected with the drain electrode of the transistor, and the negative electrode of the fourth capacitor and the negative electrode of the third capacitor are connected with the negative electrode of the voltage source.
In the present application, the metal-oxide in the mosfet is silicon carbide SiC.
In the present application, the mosfet is one of an N-type or a P-type.
The drive circuit can effectively restrain crosstalk caused by negative movement of grid voltage, is simple in structure, does not need special negative voltage source and voltage feedback, and can be achieved only by using a passive device.
Drawings
In order to more clearly illustrate the technical solutions provided by the present application, the following briefly introduces the accompanying drawings. It is to be expressly understood that the drawings described below are only illustrative of some embodiments of the invention.
Fig. 1 is a structural diagram of a driving circuit of the present application.
Fig. 2 is an equivalent circuit during the turn-on process of the driving circuit of the present application.
Fig. 3 is an equivalent circuit during the shutdown process of the driving circuit of the present application.
Detailed Description
In order to make the implementation objects, technical solutions and advantages of the present application clearer, the technical solutions in the embodiments of the present application will be described in more detail below with reference to the drawings in the embodiments of the present application.
In order to inhibit the crosstalk phenomenon caused by negative movement of the grid voltage, the driving circuit is provided, a special negative voltage source and voltage feedback are not needed, and the driving circuit can be realized only by using a passive device.
As shown in FIG. 1It is shown that the driver circuit of the present application is primarily intended for use in a metal-oxide semiconductor field effect transistor MOSFET (hereinafter MOSFET or transistor), in particular for use with silicon carbide SiC as the metal-oxide, and further comprises a voltage source vGLA first capacitor CZLA second capacitor CDGLA third capacitor CGSLA fourth capacitor CDSLFast diode DOFLA first resistor R1LA second resistor R2LA third RGL(in)And a first Zener diode DZLA second Zener diode DZPLAnd a third Zener diode DZNL. Zener diodes are also known as zener diodes.
For convenience of understanding, a connection intersection is set in the electronic component connection relationship in the following embodiments, and the connection intersection will be described.
In the drive circuit of the present application, the first capacitor CZLAnd a first zener diode DZLIs connected to the intersection point 1, a first capacitor CZLNegative pole and second resistance R2LIs connected to the intersection point 3, a second resistor R2LAnother terminal of (1) and a fast diode DOFLIs connected to a voltage source vGLAnd a first zener diode DZLIs connected to the intersection point 1, a first zener diode DZLPositive electrode and first resistor R1LIs connected to the intersection point 2, a first resistor R1LAnother end of (D) and a fast diode DOFLIs connected to the intersection point 4. Second Zener diode DZPLAnd a third Zener diode DZNLReverse series, and a second Zener diode DZPLIs connected to the intersection point 4, a third zener diode DZNLNegative pole of (2) and voltage source VGLIs connected to the intersection point 8. Third resistor RGL(in)Is connected to the intersection point 4, and a third resistor RGL(in)The other end and a third capacitor CGSLIs connected to the intersection point 5, and a third capacitor CGSLAnd a voltage source VGLIs connected to the intersection point 7, and a second capacitor CDGLPositive pole of and fourth capacitor CDSLIs connected to the intersection point 6, and a fourth capacitor CDSLNegative pole of (2) and third capacitor CGSLIs connected to the intersection point 7. The crossing point 1 is a voltage source vGLThe positive pole of (1), the intersection point 7 and the intersection point 8 are all voltage sources vGLIs simultaneously the source of the transistor, the intersection 6 is the drain of the transistor and the intersection 5 is the gate of the transistor.
The operation of the present drive circuit is described in detail below with respect to the turning on and off of the drive circuit of the present application.
1) The equivalent circuit diagram of the present driving circuit when it is turned on is shown in FIG. 2, where the voltage source v isGLRises from 0 to V within time t0GGate current iGPLThe path is formed by a first capacitor CZLA first resistor R1LA second resistor RGL(in)And a third capacitance CGSLAnd (4) forming. First Zener diode DZLThe voltage at both ends gradually rises and flows through the first Zener diode DZLCurrent i ofZLRaise and regulate vNIs equal to the voltage V across the zener diodeZ. This indicates the gate current iPGLIs equal to the first capacitance CZLCurrent i ofCLAnd through a first Zener diode DZLCurrent i ofZLThe algebraic sum of (c).
And the current i can be obtained by the following formulaGPIAnd voltage VGPIThe size of (2):
wherein t is1Is a first capacitor CZLVoltage rises to VZTime required, τaAnd τbIs a time constant, havinga＝(CZL+CGSL)(R1L+RGL(in) τb＝CGSL(R1L+RGL(in))
2) As shown in the equivalent circuit diagram of fig. 3 when the driving circuit is turned off, when the voltage V isGL＝VGTime, fast diode DOFLForward conduction of gate drive current iGNLProviding a low impedance path.
The gate drive current i at this time can be obtained by the following formulaGNLAnd voltage VGSLValue of (A)
Wherein tau iscIs a constant of time, and is,
a first capacitor CZLPre-charged to VZThe voltage, as an energy storage unit, provides a negative gate voltage when the gate drive circuit is turned off, without using a dedicated negative voltage source. To maintain the negative gate voltage in the off-state, CZLMust satisfy the following conditions
Wherein D ismIs the desired maximum duty cycle, TSIs one switching cycle.
The drive circuit can restrain the crosstalk phenomenon caused by negative movement of grid voltage, is simple in structure, does not need special negative voltage source and voltage feedback, and can be achieved only by using a passive device.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (3)
1. A driving circuit, characterized in that the driving circuit comprises
A metal oxide semiconductor field effect transistor; and a voltage source, first to fourth capacitors, a fast diode, first to third resistors, and first to third Zener diodes, wherein an anode of the first capacitor and a cathode of the first Zener diode are connected to an anode of the voltage source, a cathode of the first capacitor and one end of the second resistor are connected to an anode of the first Zener diode, the other end of the second resistor is connected to a cathode of the fast diode, an anode of the first Zener diode is connected to one end of the first resistor, the other end of the first resistor is connected to an anode of the fast diode, the second Zener diode and the third Zener diode are connected in series in reverse, a cathode of the second Zener diode is connected to an anode of the fast diode, a cathode of the third Zener diode and a cathode of the voltage source are connected to a source of the transistor, one end of the third resistor is connected to an anode of the fast diode, the other end of the third resistor and an anode of the third capacitor are connected to a gate of the transistor, the negative electrode of the third capacitor is connected with the negative electrode of the voltage source, the positive electrode of the second capacitor and the positive electrode of the fourth capacitor are connected with the drain electrode of the transistor, and the negative electrode of the fourth capacitor and the negative electrode of the third capacitor are connected with the negative electrode of the voltage source.
2. The driving circuit of claim 1, wherein the metal-oxide of the metal-oxide field effect transistor is silicon carbide (SiC).
3. The driving circuit of claim 1 or 2, wherein the MOSFET is one of N-type or P-type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910828700.2A CN110601684A (en) | 2019-09-03 | 2019-09-03 | Driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910828700.2A CN110601684A (en) | 2019-09-03 | 2019-09-03 | Driving circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110601684A true CN110601684A (en) | 2019-12-20 |
Family
ID=68857090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910828700.2A Pending CN110601684A (en) | 2019-09-03 | 2019-09-03 | Driving circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110601684A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113965055A (en) * | 2021-11-29 | 2022-01-21 | 西安科技大学 | Resonant gate drive circuit with crosstalk suppression and drive method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120249210A1 (en) * | 2011-03-30 | 2012-10-04 | Hitachi, Ltd. | Switch circuit and semiconductor circuit |
| CN109067228A (en) * | 2018-08-06 | 2018-12-21 | 西北工业大学 | A kind of driver and printed circuit layout based on gallium nitride power device |
| CN110048698A (en) * | 2019-04-17 | 2019-07-23 | 西安电子科技大学 | Inhibit the driving circuit of SiC MOSFET grid crosstalk |
-
2019
- 2019-09-03 CN CN201910828700.2A patent/CN110601684A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120249210A1 (en) * | 2011-03-30 | 2012-10-04 | Hitachi, Ltd. | Switch circuit and semiconductor circuit |
| CN109067228A (en) * | 2018-08-06 | 2018-12-21 | 西北工业大学 | A kind of driver and printed circuit layout based on gallium nitride power device |
| CN110048698A (en) * | 2019-04-17 | 2019-07-23 | 西安电子科技大学 | Inhibit the driving circuit of SiC MOSFET grid crosstalk |
Non-Patent Citations (1)
| Title |
|---|
| HAIDER ZAMAN等: ""Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter"", 《ENERGIES》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113965055A (en) * | 2021-11-29 | 2022-01-21 | 西安科技大学 | Resonant gate drive circuit with crosstalk suppression and drive method thereof |
| CN113965055B (en) * | 2021-11-29 | 2024-02-23 | 西安科技大学 | Resonant gate driving circuit with crosstalk suppression and driving method thereof |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191220 |
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| RJ01 | Rejection of invention patent application after publication |