CN110600562A - Zirconium disulfide-germanium nano pyramid heterojunction, preparation method and application thereof - Google Patents

Zirconium disulfide-germanium nano pyramid heterojunction, preparation method and application thereof Download PDF

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Publication number
CN110600562A
CN110600562A CN201910997350.2A CN201910997350A CN110600562A CN 110600562 A CN110600562 A CN 110600562A CN 201910997350 A CN201910997350 A CN 201910997350A CN 110600562 A CN110600562 A CN 110600562A
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germanium
heterojunction
zirconium disulfide
zirconium
nano pyramid
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张希威
孟丹
汤振杰
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Anyang Normal University
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Anyang Normal University
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
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    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract

The invention discloses a zirconium disulfide-germanium nano pyramid heterojunction, a preparation method and application thereof. The single-side polishing single crystal germanium wafer comprises a single-side polishing single crystal germanium wafer with a nano pyramid structure on the surface, and a uniform and continuous zirconium disulfide film is arranged on the single crystal germanium wafer. The invention relates to a heterojunction preparation method, which is used for preparing zirconium disulfide by anisotropic etching and atomic layer deposition processes on the surface of a germanium-containing sheet. The heterojunction is formed by combining a novel two-dimensional semiconductor zirconium disulfide and a germanium substrate with a three-dimensional nanostructure on the surface, so that the advantages of a novel two-dimensional material can be exerted, and the effects of regulating and controlling light absorption wavelength and enhancing light absorption can be achieved; and the atomic layer deposition process can enable the zirconium disulfide film to be completely paved on the surface of the germanium substrate and the side wall of the nano pyramid, so that comprehensive contact is realized, the area of the prepared heterojunction junction region is large, and the photoelectric conversion efficiency of the photoelectronic device is improved.

Description

Zirconium disulfide-germanium nano pyramid heterojunction, preparation method and application thereof
The technical field is as follows:
the invention relates to the field of two-dimensional material heterojunction, in particular to a zirconium disulfide-germanium nano pyramid heterojunction, a preparation method and application thereof.
Background art:
in recent years, the development and application of new two-dimensional materials has attracted considerable attention. The two-dimensional family of materials is voluminous and their properties vary. Heterojunctions based on two-dimensional materials are composed of a variety of two-dimensional materials or non-two-dimensional material contacts having different physical properties. The heterojunction based on the two-dimensional material integrates the advantages of various materials, makes up for the disadvantages, overcomes the defects of a single material, even exerts novel characteristics which are not possessed by the original material due to a unique coupling mechanism among the materials, and is expected to obtain a larger breakthrough in the field of optoelectronic devices. Due to the characteristics of the material structure and the limitation of the preparation means, the heterojunction based on the two-dimensional material is mainly of a planar structure at present, which greatly limits the absorption of the heterojunction to light and the photoelectric conversion efficiency. Instead of a plane, one can make an array of three-dimensional structures on the surface of the material, such as: the pyramid array, the nanowire array, the hole array and other structures are used for reducing the reflection of the surface of the material to light, and further enhancing the light absorption capacity so as to achieve the purpose of improving the photoelectric conversion efficiency. In the current solar cell technology, the pyramid matte structure can enable incident light to form secondary reflection on the side face of the pyramid matte, so that the light absorption rate is greatly improved. Therefore, the novel two-dimensional material and the germanium substrate with the surface having the nano pyramid structure are combined to construct the nano heterojunction with the three-dimensional shape, so that the advantages of the novel two-dimensional material can be exerted, and the effects of enhancing light absorption and improving photoelectric conversion efficiency can be achieved. However, the current two-dimensional material heterojunction is mainly prepared by dry transfer, chemical vapor deposition and the like, and the method is difficult to prepare the two-dimensional material nano heterojunction with a three-dimensional shape.
The invention content is as follows:
the invention provides a zirconium disulfide-germanium nano pyramid heterojunction, a preparation method and application thereof, aiming at overcoming the problems of insufficient light absorption and low photoelectric conversion efficiency of the existing heterojunction based on a two-dimensional material in the application process of a photoelectronic device and widening the structure and variety of the heterojunction based on the two-dimensional material.
In order to achieve the purpose, the invention provides a zirconium disulfide-germanium nano pyramid heterojunction, a preparation method and application thereof, and the preparation method is characterized in that: the germanium-doped silicon germanium substrate comprises a germanium substrate (1), wherein zirconium disulfide (2) is arranged on the germanium substrate (1).
Preferably, the method is characterized in that: the germanium substrate (1) is 1 × 1cm2-2×2cm2Single-side polished single-crystal germanium chips of (1); the thickness of the germanium substrate (1) is 150-200 μm.
Preferably, the method is characterized in that: the conduction type of the germanium substrate (1) is n-type doping, and the resistivity is 0.05-0.25 omega cm.
Preferably, the method is characterized in that: the germanium substrate (1) is a germanium substrate with a polished surface having a nano pyramid structure; the base of the germanium substrate surface nano pyramid is a quadrangle, and the side length of the quadrangle of the base is 0.5-5 microns; the height of the nano pyramid on the surface of the germanium substrate is 0.5-5 microns; the density of the germanium substrate surface nano pyramid is 4 multiplied by 106-4×108cm-2。
Preferably, the method is characterized in that: the zirconium disulfide (2) is a continuous film, and the thickness of the zirconium disulfide film is 5nm-60 nm; and the zirconium disulfide (2) film is uniformly paved on the surface of the germanium substrate and the side wall of the nano pyramid.
Preferably, the preparation method of the zirconium disulfide-germanium nano pyramid heterojunction comprises the following steps:
1) ultrasonically cleaning the cut n-type monocrystalline germanium fragments by using alcohol, acetone and deionized water;
2) processing the cleaned monocrystalline germanium fragments by an anisotropic etching method to obtain a nano pyramid structure on the surface of the monocrystalline germanium fragments;
3) removing the oxide layer on the surface of the monocrystalline germanium fragment by using a 5% hydrofluoric acid solution;
4) and uniformly depositing continuous zirconium disulfide films on the surface of the germanium sheet and the side wall of the nano pyramid by utilizing an atomic layer deposition process.
The application of the zirconium disulfide-germanium nano pyramid heterojunction in the field of photoelectric detectors.
The application of the zirconium disulfide-germanium nano pyramid heterojunction in the field of solar cells.
Compared with the prior art, the invention has the following beneficial results:
1. according to the invention, a novel layered two-dimensional semiconductor material zirconium disulfide is combined with a germanium sheet with a nano pyramid structure on the surface to construct a nano heterojunction with a three-dimensional structure, so that light absorption can be effectively regulated and controlled, incident light is reflected for multiple times in a nano pyramid array, the light absorption rate is improved, wide-angle absorption is realized, the defect of high reflectivity of a planar heterojunction is greatly improved, and the photoelectric conversion efficiency can be effectively improved in the application fields of photoelectric detectors, solar cells and the like.
2. According to the invention, the large-area uniform controllable zirconium disulfide continuous film is prepared on the germanium sheet with the nano pyramid structure on the surface by the atomic layer deposition process, and the atomic layer deposition process has the characteristic of shape retention, so that the zirconium disulfide film can completely cover the surface of the germanium sheet and the side wall of the nano pyramid, the comprehensive contact is realized, the area of the prepared heterojunction junction region is large, and the photoelectric conversion efficiency can be effectively improved in the application fields of photoelectric detectors, solar cells and the like.
Description of the drawings:
fig. 1 is a schematic cross-sectional structure of the present invention.
The specific implementation mode is as follows:
example 1:
referring to fig. 1, the present invention includes a germanium substrate having a zirconium disulfide film disposed thereon. In this embodiment, the germanium substrate is 1 × 1cm with a thickness of 150 μm2The single-side polished single crystal germanium sheet has the conductivity type of n and the resistivity of 0.05 omega cm; the polished surface of the germanium substrate is etched into a pyramid structure with a quadrilateral base by adopting an anisotropic etching method, the side length of the quadrilateral base is 0.5 mu m, the height of the pyramid structure is 0.5 mu m, and the density of the nano pyramid on the surface of the germanium sheet is 4 multiplied by 108cm-2. In this embodiment, the surface of the germanium substrate and the side walls of the nano pyramids are uniformly covered with the zirconium disulfide film, and the thickness of the zirconium disulfide film is 12 nm.
The heterojunction in this example was prepared as follows:
1) ultrasonically cleaning the cut n-type monocrystalline germanium fragments by using alcohol, acetone and deionized water;
2) processing the cleaned monocrystalline germanium fragments by an anisotropic etching method to obtain a nano pyramid structure on the surface of the monocrystalline germanium fragments;
3) removing the oxide layer on the surface of the monocrystalline germanium fragment by using a 5% hydrofluoric acid solution;
4) and uniformly depositing continuous zirconium disulfide films on the surface of the germanium sheet and the side wall of the nano pyramid by utilizing an atomic layer deposition process.
The zirconium disulfide-germanium nano pyramid heterojunction in the embodiment is used in the field of photoelectric detectors.
Example 2:
referring to fig. 1, the present invention includes a germanium substrate having a zirconium disulfide film disposed thereon. In this embodiment, the germanium substrate is 2 × 1cm with a thickness of 150 μm2The single-side polished single crystal germanium sheet has the conductivity type of n and the resistivity of 0.2 omega cm; the polished surface of the germanium substrate is etched into a pyramid structure with a quadrilateral base by adopting an anisotropic etching method, the side length of the quadrilateral base is 2 mu m, the height of the pyramid structure is 2 mu m, and the density of the nano pyramid on the surface of the germanium sheet is 4 multiplied by 107cm-2. In this embodiment, the surface of the germanium substrate and the side walls of the nano pyramids are uniformly covered with the zirconium disulfide film, and the thickness of the zirconium disulfide film is 48 nm.
The heterojunction in this example was prepared as follows:
1) ultrasonically cleaning the cut n-type monocrystalline germanium fragments by using alcohol, acetone and deionized water;
2) processing the cleaned monocrystalline germanium fragments by an anisotropic etching method to obtain a nano pyramid structure on the surface of the monocrystalline germanium fragments;
3) removing the oxide layer on the surface of the monocrystalline germanium fragment by using a 5% hydrofluoric acid solution;
4) and uniformly depositing continuous zirconium disulfide films on the surface of the germanium sheet and the side wall of the nano pyramid by utilizing an atomic layer deposition process.
The zirconium disulfide-germanium nano pyramid heterojunction in the embodiment is used in the field of solar cells.
Example 3:
referring to fig. 1, the present invention includes a germanium substrate having a zirconium disulfide film disposed thereon. In this embodiment, the germanium substrate is 2 × 2cm with a thickness of 200 μm2The single-side polished single crystal germanium sheet has the conductivity type of n and the resistivity of 0.25 omega cm; the polished surface of the germanium substrate is etched into a pyramid structure with a quadrilateral base by adopting an anisotropic etching method, the side length of the quadrilateral base is 5 mu m, the height of the pyramid structure is 5 mu m, and the density of the nano pyramid on the surface of the germanium sheet is 4 multiplied by 106cm-2. In this embodiment, the surface of the germanium substrate and the side walls of the nano pyramids are uniformly covered with the zirconium disulfide film, and the thickness of the zirconium disulfide film is 60 nm.
The heterojunction in this example was prepared as follows:
1) ultrasonically cleaning the cut n-type monocrystalline germanium fragments by using alcohol, acetone and deionized water;
2) processing the cleaned monocrystalline germanium fragments by an anisotropic etching method to obtain a nano pyramid structure on the surface of the monocrystalline germanium fragments;
3) removing the oxide layer on the surface of the monocrystalline germanium fragment by using a 5% hydrofluoric acid solution;
4) and uniformly depositing continuous zirconium disulfide films on the surface of the germanium sheet and the side wall of the nano pyramid by utilizing an atomic layer deposition process.
The zirconium disulfide-germanium nano pyramid heterojunction in the embodiment is used in the field of photoelectric detectors.

Claims (8)

1. A zirconium disulfide-germanium nanometer pyramid heterojunction is characterized in that: the germanium-doped silicon germanium substrate comprises a germanium substrate (1), wherein zirconium disulfide (2) is arranged on the germanium substrate (1).
2. The zirconium disulfide-germanium nanopyramid heterojunction of claim 1, wherein: the germanium substrate (1) is 1 × 1cm2-2×2cm2Single-side polished single-crystal germanium chips of (1); the thickness of the germanium substrate (1) is 150-200 μm.
3. The zirconium disulfide-germanium nanopyramid heterojunction of claim 1, wherein: the conduction type of the germanium substrate (1) is n-type doping, and the resistivity is 0.05-0.25 omega cm.
4. The zirconium disulfide-germanium nanopyramid heterojunction of claim 1, wherein: the germanium substrate (1) is a germanium substrate with a polished surface having a nano pyramid structure; the base of the germanium substrate surface nano pyramid is a quadrangle, and the side length of the quadrangle of the base is 0.5-5 mu m; the height of the nano pyramid on the surface of the germanium substrate is 0.5-5 mu m; the density of the germanium substrate surface nano pyramid is 4 multiplied by 106-4×108cm-2。
5. The zirconium disulfide-germanium nanopyramid heterojunction of claim 1, wherein: the zirconium disulfide (2) is a continuous film, and the thickness of the zirconium disulfide film is 5nm-60 nm; and the zirconium disulfide (2) film is uniformly paved on the surface of the germanium substrate and the side wall of the nano pyramid.
6. A preparation method of a zirconium disulfide-germanium nano pyramid heterojunction comprises the following steps:
1) ultrasonically cleaning the cut n-type monocrystalline germanium fragments by using alcohol, acetone and deionized water;
2) processing the cleaned monocrystalline germanium fragments by an anisotropic etching method to obtain a nano pyramid structure on the surface of the monocrystalline germanium fragments;
3) removing the oxide layer on the surface of the monocrystalline germanium fragment by using a 5% hydrofluoric acid solution;
4) and uniformly depositing continuous zirconium disulfide films on the surface of the germanium sheet and the side wall of the nano pyramid by utilizing an atomic layer deposition process.
7. The use of the zirconium disulfide-germanium nanopyramid heterojunction of claim 1 in the field of photodetectors.
8. The use of the zirconium disulfide-germanium nanopyramid heterojunction of claim 1 in the field of solar cells.
CN201910997350.2A 2019-10-08 2019-10-08 Zirconium disulfide-germanium nano pyramid heterojunction, preparation method and application thereof Pending CN110600562A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111262133A (en) * 2020-01-16 2020-06-09 北京理工大学 Method for improving single-layer two-dimensional semiconductor light-emitting brightness

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111262133A (en) * 2020-01-16 2020-06-09 北京理工大学 Method for improving single-layer two-dimensional semiconductor light-emitting brightness

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