CN110600290A - Silicon-based metal contact self-locking MEMS switch - Google Patents
Silicon-based metal contact self-locking MEMS switch Download PDFInfo
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- CN110600290A CN110600290A CN201910930557.8A CN201910930557A CN110600290A CN 110600290 A CN110600290 A CN 110600290A CN 201910930557 A CN201910930557 A CN 201910930557A CN 110600290 A CN110600290 A CN 110600290A
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- movable contact
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- contact
- shaped groove
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0042—Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet
- H01H2001/0047—Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet operable only by mechanical latching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0084—Switches making use of microelectromechanical systems [MEMS] with perpendicular movement of the movable contact relative to the substrate
Abstract
A silicon-based metal contact self-locking MEMS switch comprises a substrate provided with three drivers, wherein a second actuator and a third driver are arranged vertically to a first actuator and are symmetrically distributed corresponding to the first actuator, the first actuator drives a first movable contact to act, the second actuator and the third actuator drive a first limiting rod and a second limiting rod to act, the first limiting rod and the second limiting rod are matched with tooth-shaped grooves on two sides of a connecting seat of the first movable contact, and the front of the first movable contact is matched with the second movable contact and the third movable contact; the movable contact is a composite structure of silicon and metal formed by an upper layer and a lower layer, the lower layer is a silicon structure layer, a structure with a wide upper part and a narrow lower part is obtained by utilizing the lateral erosion phenomenon of dry etching, and the movable contact is actually the contact of the metal surface of the upper layer when in contact; the switch circuit is disconnected when the movable contact is not contacted, and the switch circuit is conducted when the movable contact is contacted; the invention has the characteristics of high reliability, low contact resistance and the like.
Description
Technical Field
The invention belongs to the technical field of micro mechanical electronic MEMS switches, and particularly relates to a silicon-based metal contact self-locking MEMS switch.
Background
The switch is a key component in an automatic control circuit, the main functions of the switch in the circuit are automatic adjustment, safety protection, circuit conversion and the like, and the MEMS switch combines an electromechanical switching mechanism and a micro-processing technology, so that a wide development space is provided for miniaturization, integration and low-power-consumption design, and an effective scheme is provided for the development of a high-performance circuit system. In application occasions such as national defense weapons, aerospace and the like, the MEMS switch is generally required to have high reliability, small contact impedance, low power consumption, small volume, light weight, quick response and the like.
The thermal drive MEMS actuator is manufactured according to the thermal expansion effect of a solid material, the structure types of the thermal drive MEMS actuator comprise a linear expansion structure, a double-variant structure, a V-shaped beam structure and the like, common structure layers of the switches are divided into a metal structure and a silicon structure, wherein the metal structure has a lower resistance value, the drive voltage is small, but the processing is difficult, and the cost is high; the silicon structure belongs to a semiconductor, has higher resistance value and can be used as a heater, but the contact resistance of the contact is large, and the driving current is small.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a silicon-based metal contact self-locking MEMS switch, which combines a silicon structure and a metal contact, adopts a bistable mechanism to realize the self-locking of a switch state, and has the characteristics of high reliability, low contact resistance, low power consumption, low cost and the like.
In order to achieve the purpose, the invention adopts the technical scheme that:
a silicon-based metal contact self-locking MEMS switch comprises a substrate 10, wherein a first actuator 20, a second actuator 30 and a third driver 40 are manufactured on the substrate 10, the second actuator 30 and the third driver 40 are vertically arranged with the first actuator 20, the second actuator 30 and the third driver 40 are symmetrically distributed corresponding to the first actuator 20, the first actuator 20 drives a first movable contact 21 of the switch to move, the second actuator 30 and the third driver 40 drive a first limiting rod 31 and a second limiting rod 41 to move, the first limiting rod 31 and the second limiting rod 41 are matched with two sides of a connecting seat of the first movable contact 21, the front of the first movable contact 21 is matched with the second movable contact 50 and the third movable contact 60, and the second movable contact 50 and the third movable contact 60 are manufactured on the substrate 10.
The first movable contact 21 is composed of a first upper layer 21a and a first lower layer 21b, wherein the first lower layer 21b is a silicon structure layer, a structure with a wide upper part and a narrow lower part is obtained by utilizing a lateral erosion phenomenon of dry etching, and the first upper layer 21a of metal is electroformed on the first lower layer 21b to form a composite structure of silicon and metal; the second movable contact 50 and the third movable contact 60 have the same structure as the first movable contact 21, and are composed of a second upper layer 60a and a second lower layer 60b, the second lower layer 60b has a wide upper portion and a narrow lower portion, which are obtained by utilizing a lateral erosion phenomenon of dry etching, and the second upper layer 60a of metal is electroformed on the second lower layer 60b, thereby forming a composite structure of silicon and metal. When the first movable contact 21 is in contact with the second movable contact 50 and the third movable contact 60, the metal surfaces of the first upper layer 21a and the second upper layer 60a are actually in contact, and when the first movable contact 21 is not in contact with the second movable contact 50 and the third movable contact 60, the switching circuit is opened, and when the first movable contact is in contact with the second movable contact 50 and the third movable contact 60, the switching circuit is turned on.
The substrate 10 is square and made of SOI material, the side length is within 6000 μm, four back cavities are formed in the substrate layer 11 of the substrate 10, wherein a first back cavity 11a is located below the first actuator 20, a second back cavity 11b is located below the second actuator 30, a third back cavity 11c is located below the third actuator 40, and a fourth back cavity 11d is located below the first movable contact 21, the second movable contact 50, and the third movable contact 60.
The first actuator 20 is in a V-shaped beam array structure, the front end of the first actuator 20 is connected with the first movable contact 21 through a connecting seat, two sides of the connecting seat are provided with a first tooth-shaped groove 24a, a second tooth-shaped groove 24b, a third tooth-shaped groove 24c and a fourth tooth-shaped groove 24d, the first tooth-shaped groove 24a and the fourth tooth-shaped groove 24d are positioned on the same side, the third tooth-shaped groove 24c and the second tooth-shaped groove 24b are positioned on the same side, the first tooth-shaped groove 24a and the second tooth-shaped groove 24b are symmetrical, and the third tooth-shaped groove 24c and the fourth tooth-shaped groove 24d are symmetrical; and two ends of the V-shaped beam array structure are respectively connected with the second anchor point 12b and the third anchor point 12 c.
The second actuator 30 and the third actuator 40 are in a V-shaped beam array structure with the same shape and size as the first actuator 20, and are symmetrically distributed in a face-to-face mode; the front end of the second actuator 30 is a first limiting rod 31, the front end of the third actuator 40 is a second limiting rod 41, the two ends of the second actuator 30 are respectively connected with the first anchor point 12a and the second anchor point 12b, and the two ends of the third actuator 40 are respectively connected with the third anchor point 12c and the fourth anchor point 12 d.
The second movable contact 50 and the third movable contact 60 are supported at the fifth anchor point 13a and the sixth anchor point 13b by the first flexible beam 51 and the second flexible beam 61, respectively.
The first toothed groove 24a, the second toothed groove 24b, the third toothed groove 24c and the fourth toothed groove 24d are respectively matched with the first limiting rod 31 and the second limiting rod 41 to realize the self-locking of the switch: the switch is reliably turned off when the first and second toothed grooves 24a, 24b are engaged with the first and second position limiting rods 31, 41, and is reliably turned on when the third and fourth toothed grooves 24c, 24d are engaged with the first and second position limiting rods 31, 41.
The first lower layer 21b is electroformed with 30-40 μm of metallic nickel as the first upper layer 21a, and the second lower layer 60b is electroformed with 30-40 μm of metallic nickel as the second upper layer 60 a.
Compared with the traditional mechanical switch, the invention has the advantages that:
the upper layers of the first movable contact 21, the second movable contact 50 and the third movable contact 60 are electroformed with 30-40 μm of metal nickel, which is the contact of the surfaces of the metal contacts when the switch is closed, and the contact resistance is small, so that the current signal is obvious when the switch is closed.
The first toothed groove 24a, the second toothed groove 24b, the third toothed groove 24c and the fourth toothed groove 24d are respectively matched with the first limiting rod 31 and the second limiting rod 41 to realize self-locking of the on-off state of the switch, so that the switch circuit can be reliably switched off and on, and the switch has a simple structure and large contact force. Meanwhile, the switch structure based on the bistable principle greatly reduces the power consumption of the system.
The thermoelectric effect is combined with the MEMS switching technology, the driving displacement is large, and the size and the weight of the device are effectively reduced.
Drawings
Fig. 1 is a schematic perspective view of the present invention.
FIG. 2 is a schematic top view of the structure of the present invention.
Fig. 3 is an enlarged view of a part of the sectional view of fig. 2, in which (a) is a schematic view showing that the first movable contact 21 and the second and third movable contacts 50 and 60 are not in contact with each other, and (b) is a schematic view showing that the first movable contact 21 and the second and third movable contacts 50 and 60 are in contact with each other.
Fig. 4 is a schematic diagram of switching states of the switch of the present invention, in which (a) is a diagram showing a state where the first movable contact 21 is not in contact with the second movable contact 50 and the third movable contact 60, fig. (b) is a diagram showing outward movement of the stopper rod 31 and the stopper rod 41, fig. (c) is a diagram showing forward movement of the first movable contact 21, fig. (d) is a diagram showing inward deformation recovery of the stopper rod 31 and the stopper rod 41, and fig. (e) is a diagram showing backward deformation recovery of the first movable contact 21.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and examples.
Referring to fig. 1, a silicon-based metal contact self-locking MEMS switch includes a substrate 10, a first actuator 20, a second actuator 30, and a third actuator 40 are fabricated on the substrate 10, the second actuator 30 and the third actuator 40 are disposed perpendicular to the first actuator 20, the second actuator 30 and the third actuator 40 are symmetrically distributed corresponding to the first actuator 20, the first actuator 20 drives a first movable contact 21 of the switch to move, the second actuator 30 and the third actuator 40 drive a first limiting rod 31 and a second limiting rod 41 to move, the first limiting rod 31 and the second limiting rod 41 are engaged with two sides of a connection seat of the first movable contact 21, a front of the first movable contact 21 is engaged with the second movable contact 50 and the third movable contact 60, and the second movable contact 50 and the third movable contact 60 are fabricated on the substrate 10.
The substrate 10 is square and made of SOI material, the side length is within 6000 μm, four back cavities are formed in the substrate layer 11 of the substrate 10, wherein a first back cavity 11a is located below the first actuator 20, a second back cavity 11b is located below the second actuator 30, a third back cavity 11c is located below the third actuator 40, and a fourth back cavity 11d is located below the first movable contact 21, the second movable contact 50, and the third movable contact 60.
Referring to fig. 2, the first actuator 20 is a V-beam array structure, the front end of the first actuator 20 is connected to the first movable contact 21 through a connecting base, two sides of the connecting base are provided with a first toothed groove 24a, a second toothed groove 24b, a third toothed groove 24c and a fourth toothed groove 24d, the first toothed groove 24a and the fourth toothed groove 24d are located on the same side, the third toothed groove 24c and the second toothed groove 24b are located on the same side, the first toothed groove 24a and the second toothed groove 24b are symmetrical, and the third toothed groove 24c and the fourth toothed groove 24d are symmetrical; the end parts of the V-shaped beams of the V-shaped beam array structure are respectively connected with the second anchor point 12b and the third anchor point 12c, and when a driving voltage U1 is applied between the second anchor point 12b and the third anchor point 12c, the first V-shaped actuator 20 drives the first movable contact 21 to generate a forward output displacement.
The second actuator 30 and the third actuator 40 are in a V-shaped beam array structure with the same shape and size as the first actuator 20, and are symmetrically distributed in a face-to-face mode; the front end of the second actuator 30 is a first limiting rod 31, the front end of the third actuator 40 is a second limiting rod 41, the two ends of the second actuator 30 are respectively connected with the first anchor point 12a and the second anchor point 12b, and the two ends of the third actuator 40 are respectively connected with the third anchor point 12c and the fourth anchor point 12 d; when two paths of driving voltage U2 and three paths of driving voltage U3 are simultaneously applied between the first anchor point 12a and the second anchor point 12b and between the third anchor point 12c and the fourth anchor point 12d, the second actuator 30 and the third actuator 40 respectively drive the first limiting rod 31 and the second limiting rod 41 to generate output displacements deviating from each other.
The second movable contact 50 and the third movable contact 60 are supported at the fifth anchor point 13a and the sixth anchor point 13b by the first flexible beam 51 and the second flexible beam 61, respectively.
Referring to fig. 3(a), the first movable contact 21 is composed of a first upper layer 21a and a first lower layer 21b, wherein the first lower layer 21b is a silicon structure layer, and since the silicon structure has a thickness of 50 μm, there is a lateral erosion phenomenon during etching, so that the side wall has a slope, and a first lower layer 21b with a wide top and a narrow bottom is obtained, and by utilizing the characteristic of dry etching, 30-40 μm of metal nickel is electroformed on the first lower layer 21b as the first upper layer 21a, so as to form a composite structure of silicon and metal; the second movable contact 50 and the third movable contact 60 have the same structure as the first movable contact 21 and are composed of a second upper layer 60a and a second lower layer 60b, the second lower layer 60b is a structure which is wide at the top and narrow at the bottom and is obtained by utilizing the lateral erosion phenomenon of dry etching, and 30-40 mu m of metal nickel is electroformed on the second lower layer 60b as the second upper layer 60a to form a composite structure of silicon and metal; referring to fig. 3(b), when the first movable contact 21 is in contact with the second movable contact 50 and the third movable contact 60, the metal surfaces of the first upper layer 21a and the second upper layer 60a are actually in contact, which effectively reduces the contact resistance; the first contact 21, the second movable contact 50, and the third movable contact 60 are disconnected in the switching circuit when not in contact, and are connected in the switching circuit when in contact.
The first toothed groove 24a, the second toothed groove 24b, the third toothed groove 24c and the fourth toothed groove 24d are respectively matched with the first limiting rod 31 and the second limiting rod 41 to realize the self-locking of the switch: the switch is reliably turned off when the first and second toothed grooves 24a, 24b are engaged with the first and second position limiting rods 31, 41, and is reliably turned on when the third and fourth toothed grooves 24c, 24d are engaged with the first and second position limiting rods 31, 41.
The working principle of the invention is as follows:
referring to fig. 4(a), the first movable contact 21, the second movable contact 50 and the third movable contact 60 are not yet in contact, and the switch is in a normally open state; referring to fig. 4(b), the two-way driving voltage U2 and the three-way driving voltage U3 become high level, and drive the first limiting rod 31 and the second limiting rod 41 to move away from each other; referring to fig. 4(c), the two-way driving voltage U2 and the three-way driving voltage U3 remain unchanged, and the one-way driving voltage U1 goes high, driving the first movable contact 21 to move forward by a displacement greater than the gaps with the second movable contact 50 and the third movable contact 60, so that the first movable contact 21 pushes the flexible beam 51 and the second movable contact 50 and the third movable contact 60 on the flexible beam 61 to move forward together, and the switch is closed; referring to fig. 4(d), the two-way driving voltage U2 and the three-way driving voltage U3 become low level, the two limiting rods return to the initial position, and the one-way driving voltage U1 remains unchanged; referring to fig. 4(e), when the one-way driving voltage U1 becomes low level, the first movable contact 21 returns to be deformed backward, the second movable contact 50 and the third movable contact 60 follow the first movable contact 21 to rebound for a part, and are not completely restored to the initial positions due to the blocking of the limiting rod 31 and the limiting rod 41, and a large contact force is maintained between the first movable contact 21 and the second movable contact 50 and the third movable contact 60, thereby completing the switch from the normally open state to the normally closed state.
The electrothermal drive MEMS switch is different from the traditional switch structure, and has the following characteristics: the upper layers of the first movable contact 21, the second movable contact 50 and the third movable contact 60 are electroformed with 30-40 μm of metal nickel, when the switch is closed, the metal contacts are in contact, the contact resistance is small, and therefore, current signals are obvious when the switch is closed; the switch structure based on the bistable principle can realize the self-locking of the on-off state, greatly reduces the power consumption of the system, and has high reliability of contact; and thirdly, the thermoelectric effect is combined with the MEMS switch technology, and the SOI is used as the substrate, so that the processing and integration are easy, and the volume and the weight of the device are effectively reduced.
Claims (7)
1. A silicon-based metal contact self-locking MEMS switch comprising a substrate (10), characterized in that: a first actuator (20), a second actuator (30) and a third driver (40) are manufactured on the substrate (10), the second actuator (30) and the third driver (40) are perpendicular to the first actuator (20), the second actuator (30) and the third actuator (40) are symmetrically distributed corresponding to the first actuator (20), the first actuator (20) drives the first movable contact (21) of the switch to act, the second actuator (30) and the third actuator (40) drive the first limiting rod (31) and the second limiting rod (41) to act, the first limiting rod (31) and the second limiting rod (41) are matched with two sides of a connecting seat of the first movable contact (21), the front of the first movable contact (21) is matched with the second movable contact (50) and the third movable contact (60), and the second movable contact (50) and the third movable contact (60) are manufactured on the substrate (10);
the first movable contact (21) is composed of a first upper layer (21a) and a first lower layer (21b), the first lower layer (21b) is a silicon structure layer, a structure with a wide upper part and a narrow lower part is obtained by utilizing a lateral erosion phenomenon of dry etching, and the first upper layer (21a) of metal is electroformed on the first lower layer (21b) to form a composite structure of silicon and metal; the second movable contact (50) and the third movable contact (60) have the same structure as the first movable contact (21) and are composed of a second upper layer (60a) and a second lower layer (60b), the second lower layer (60b) is a structure which is wide at the top and narrow at the bottom and is obtained by utilizing the lateral erosion phenomenon of dry etching, and the second upper layer (60a) of metal is electroformed on the second lower layer (60b) to form a composite structure of silicon and metal; when the first movable contact (21) is in contact with the second movable contact (50) and the third movable contact (60), the metal surfaces of the first upper layer (21a) and the second upper layer (60a) are actually in contact, and when the first movable contact (21) is not in contact with the second movable contact (50) and the third movable contact (60), the switching circuit is disconnected, and when the first movable contact is in contact with the second movable contact (50), the switching circuit is conducted.
2. The self-locking MEMS switch of claim 1 wherein: the substrate (10) is square and made of SOI materials, the side length is within 6000 mu m, four back cavities are formed in a substrate layer (11) of the substrate (10), a first back cavity (11a) is located below a first actuator (20), a second back cavity (11b) is located below a second actuator (30), a third back cavity (11c) is located below a third actuator (40), and a fourth back cavity (11d) is located below a first movable contact (21), a second movable contact (50) and a third movable contact (60).
3. The self-locking MEMS switch of claim 1 wherein: the first actuator (20) is of a V-shaped beam array structure, the front end of the first actuator (20) is connected with the first movable contact (21) through a connecting seat, a first tooth-shaped groove (24a), a second tooth-shaped groove (24b), a third tooth-shaped groove (24c) and a fourth tooth-shaped groove (24d) are formed in two sides of the connecting seat, the first tooth-shaped groove (24a) and the fourth tooth-shaped groove (24d) are located on the same side, the third tooth-shaped groove (24c) and the second tooth-shaped groove (24b) are located on the same side, the first tooth-shaped groove (24a) and the second tooth-shaped groove (24b) are symmetrical, and the third tooth-shaped groove (24c) and the fourth tooth-shaped groove (24 d; and two ends of the V-shaped beam array structure are respectively connected with a second anchor point (12b) and a third anchor point (12 c).
4. The self-locking MEMS switch of claim 3 wherein: the second actuator (30) and the third actuator (40) are in a V-shaped beam array structure with the same shape and size as the first actuator (20), and are symmetrically distributed in a face-to-face mode; the front end of the second actuator (30) is a first limiting rod (31), the front end of the third actuator (40) is a second limiting rod (41), the two ends of the second actuator (30) are respectively connected with the first anchor point (12a) and the second anchor point (12b), and the two ends of the third actuator (40) are respectively connected with the third anchor point (12c) and the fourth anchor point (12 d).
5. The self-locking MEMS switch of claim 1 wherein: the second movable contact (50) and the third movable contact (60) are supported on a fifth anchor point (13a) and a sixth anchor point (13b) through a first flexible beam (51) and a second flexible beam (61) respectively.
6. The self-locking MEMS switch of claim 3 wherein: first tooth-shaped groove (24a), second tooth-shaped groove (24b), third tooth-shaped groove (24c), fourth tooth-shaped groove (24d) cooperate with first gag lever post (31) and second gag lever post (41) respectively and realize the state self-locking of switch: when the first toothed groove (24a) and the second toothed groove (24b) are matched with the first limiting rod (31) and the second limiting rod (41), the switch is kept off, and when the third toothed groove (24c) and the fourth toothed groove (24d) are matched with the first limiting rod (31) and the second limiting rod (41), the switch is kept on.
7. The self-locking MEMS switch of claim 1 wherein: the first lower layer (21b) is electroformed with 30-40 μm of metallic nickel as the first upper layer (21a), and the second lower layer (60b) is electroformed with 30-40 μm of metallic nickel as the second upper layer (60 a).
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| CN201910930557.8A CN110600290B (en) | 2019-09-29 | 2019-09-29 | Silicon-based metal contact self-locking MEMS switch |
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| CN201910930557.8A CN110600290B (en) | 2019-09-29 | 2019-09-29 | Silicon-based metal contact self-locking MEMS switch |
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| CN110600290A true CN110600290A (en) | 2019-12-20 |
| CN110600290B CN110600290B (en) | 2020-07-10 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112259413A (en) * | 2020-09-18 | 2021-01-22 | 西安交通大学 | Physical latching MEMS switch based on liquid metal |
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| US6661084B1 (en) * | 2000-05-16 | 2003-12-09 | Sandia Corporation | Single level microelectronic device package with an integral window |
| CN203941342U (en) * | 2014-05-05 | 2014-11-12 | 深圳市盛喜路科技有限公司 | A kind of mems optical switch |
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