CN110580861B - Display device - Google Patents
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- CN110580861B CN110580861B CN201810585109.4A CN201810585109A CN110580861B CN 110580861 B CN110580861 B CN 110580861B CN 201810585109 A CN201810585109 A CN 201810585109A CN 110580861 B CN110580861 B CN 110580861B
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- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
Abstract
The invention provides a display device, which comprises a driving substrate and a plurality of micro light-emitting elements. The driving substrate has a plurality of pixel regions. The micro light-emitting element is arranged in the pixel area of the driving substrate and is electrically connected with the driving substrate. A plurality of micro light-emitting elements are arranged in each pixel area. The forward projection area of the micro light-emitting elements in each pixel area on the driving substrate is the same. At least two micro light-emitting elements in each pixel region have different effective light-emitting areas.
Description
Technical Field
The present invention relates to a display device, and more particularly, to a display device having micro light-emitting elements as display pixels.
Background
With the progress of optoelectronic technology, the volume of many optoelectronic devices is gradually reduced. In recent years, due to the breakthrough in the manufacturing size of Light-Emitting diodes (LEDs), micro-LED displays manufactured by arranging LEDs in an array are gaining increasing attention in the market. However, the micro light emitting diode is unstable in both electrical performance and light emitting wavelength, and thus tends to have a larger leakage problem. In addition, in order to balance the influence of human eyes on color perception and improve display quality, the light emitting diodes of different colors in each pixel region have different sizes. However, the leds with different sizes are also troublesome in the process of transferring from the carrier substrate to the receiving substrate, which tends to increase the manufacturing cost.
Disclosure of Invention
The invention provides a display device which has better electrical reliability and lower manufacturing cost.
The display device of the invention comprises a driving substrate and a plurality of micro light-emitting elements. The driving substrate has a plurality of pixel regions. The micro light-emitting element is arranged in the pixel area of the driving substrate and is electrically connected with the driving substrate. A plurality of micro light-emitting elements are arranged in each pixel area. The forward projection area of the micro light-emitting elements in each pixel area on the driving substrate is the same. At least two micro light-emitting elements in each pixel region have different effective light-emitting areas.
In an embodiment of the invention, the at least two micro light emitting devices in each pixel region include a first micro light emitting device emitting red light and a second micro light emitting device emitting blue light. The effective light-emitting area of the first micro light-emitting element is larger than that of the second micro light-emitting element.
In an embodiment of the invention, in each pixel region, an orthogonal projection length of the first micro light emitting device on the driving substrate is equal to an orthogonal projection length of the second micro light emitting device on the driving substrate.
In an embodiment of the invention, each of the micro light emitting devices includes a first type semiconductor layer, an active layer, a second type semiconductor layer, and a via. The through hole penetrates through the second semiconductor layer, the active layer and a part of the first type semiconductor layer in sequence. In each pixel region, the aperture of the through hole of the first micro light-emitting element is smaller than that of the through hole of the second micro light-emitting element.
In an embodiment of the invention, an area of an active layer of the first micro light emitting device is larger than an area of an active layer of the second micro light emitting device.
In an embodiment of the invention, each of the micro light emitting devices includes a first type semiconductor layer, an active layer and a second type semiconductor layer. The active layer has a low resistance region and a high resistance region surrounding the low resistance region. In each pixel region, the area of the high resistance region of the active layer of the first micro light-emitting element is smaller than that of the high resistance region of the active layer of the second micro light-emitting element.
In an embodiment of the invention, each of the micro light emitting devices includes a first type semiconductor layer, an active layer and a second type semiconductor layer. In each pixel region, the edge of the first type semiconductor layer, the edge of the active layer and the edge of the second type semiconductor layer of the first micro light-emitting element are aligned, and the length of the second micro light-emitting element is gradually reduced from the first type semiconductor layer to the second type semiconductor layer.
In an embodiment of the invention, each of the micro light emitting devices includes a first type semiconductor layer, an active layer, a second type semiconductor layer, and a current distribution layer. In each pixel region, the edge of the first type semiconductor layer, the edge of the active layer and the edge of the second type semiconductor layer are aligned with each other. The edge of the current distribution layer of the first micro light-emitting element is cut to be flush with the edge of the second type semiconductor layer. The current distribution layer of the second micro light-emitting device exposes a portion of the second type semiconductor layer. The contact area between the current distribution layer of the second micro light-emitting element and the second type semiconductor layer is smaller than that between the current distribution layer of the first micro light-emitting element and the second type semiconductor layer.
In an embodiment of the invention, each of the micro light emitting devices includes a first type semiconductor layer, an active layer and a second type semiconductor layer. In each pixel region, the edge of the first type semiconductor layer, the edge of the active layer and the edge of the second type semiconductor layer of the first micro light-emitting element are aligned with each other. The active layer of the second micro light-emitting device exposes a portion of the first type semiconductor layer, and the edge of the second type semiconductor layer of the second micro light-emitting device is aligned with the edge of the active layer.
In an embodiment of the invention, a ratio of an effective light emitting area of the first micro light emitting device to an effective light emitting area of the second micro light emitting device is between 1.5 and 5.
In an embodiment of the invention, each of the pixel regions includes a first micro light emitting device emitting red light, a second micro light emitting device emitting blue light, and a third micro light emitting device emitting green light. The effective light-emitting area of the first micro light-emitting element is larger than that of the second micro light-emitting element, and the effective light-emitting area of the second micro light-emitting element is larger than that of the third micro light-emitting element.
In an embodiment of the invention, each of the pixel regions includes a first micro light emitting device emitting red light, a second micro light emitting device emitting blue light, and a third micro light emitting device emitting green light. The effective light-emitting area of the first micro light-emitting element is larger than that of the second micro light-emitting element or the third micro light-emitting element.
In view of the above, in the display device of the present invention, the forward projection areas of the micro light emitting devices in each pixel region on the driving substrate are the same, and at least two micro light emitting devices in each pixel region have different effective light emitting areas. That is, the micro light emitting devices in each pixel region have the same size, and at least two micro light emitting devices have different effective light emitting areas. The design balances the influence of human eyes on color perception and improves display quality, and meanwhile, the display device has better electrical reliability and lower manufacturing cost.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
Fig. 1A is a schematic top view of a display device according to an embodiment of the invention.
Fig. 1B and fig. 1C are schematic cross-sectional views of the first micro light-emitting device and the second micro light-emitting device in fig. 1A, respectively.
Fig. 2A and fig. 2B are schematic cross-sectional views illustrating a first micro light-emitting device and a second micro light-emitting device of a display device according to another embodiment of the invention.
Fig. 3A and fig. 3B are schematic cross-sectional views illustrating a first micro light-emitting device and a second micro light-emitting device of a display device according to another embodiment of the invention.
Fig. 3C and fig. 3D are schematic cross-sectional views illustrating a first micro light-emitting device and a second micro light-emitting device of a display device according to another embodiment of the invention.
Fig. 4A and 4B are schematic cross-sectional views illustrating a first micro light-emitting device and a second micro light-emitting device of a display device according to another embodiment of the invention.
Fig. 5A and 5B are schematic cross-sectional views illustrating a first micro light-emitting device and a second micro light-emitting device of a display device according to another embodiment of the invention.
Fig. 6 is a schematic top view of a display device according to another embodiment of the present invention.
Description of the reference numerals
100. 100': display device
110: driving substrate
112: pixel region
120a, 120b, 120 c', 120d, 120e, 120 f: first micro light-emitting element
122a, 122b, 122 c', 122d, 122e, 132a, 132b, 132c, 132d, 132 e: first type semiconductor layer
124a, 124b, 124 c', 124d, 124e, 134a, 134b, 134c, 134d, 134 e: active layer
126a, 126b, 126 c', 126d, 126e, 136a, 136b, 136c, 136d, 136 e: second type semiconductor layer
128a, 128f, 138a, 138f, 148 f: through hole
129d, 139 d: current distribution layer
130a, 130b, 130c, 130d, 130e, 130 f: second micro light-emitting element
140a, 140 f: third micro light emitting element
E. E': micro light-emitting device
H1, H2: pore diameter
L1, L2: length of orthographic projection
R11, R21: low resistance region
R12, R22: high resistance region
Detailed Description
Fig. 1A is a schematic top view of a display device according to an embodiment of the invention. Fig. 1B and fig. 1C are schematic cross-sectional views of the first micro light-emitting device and the second micro light-emitting device in fig. 1A, respectively. Referring to fig. 1A, fig. 1B and fig. 1C, in the present embodiment, the display device 100 includes a driving substrate 110 and a plurality of micro light emitting elements E. The driving substrate 110 has a plurality of pixel regions 112, and each pixel region 112 is provided with three micro light emitting devices E. The micro light emitting device E is disposed in the pixel region 112 of the driving substrate 110 and electrically connected to the driving substrate 110. In particular, the forward projection areas of the micro light emitting devices E in each pixel region 112 on the driving substrate 110 are the same, and at least two micro light emitting devices E in each pixel region 112 have different effective light emitting areas.
Here, the Display device 100 is, for example, a Micro light emitting diode Display (Micro LED Display). Micro light emitting diode displays typically also include other components, such as: a central control processor, a touch device, a battery, etc. The micro light emitting diode display is, for example: a television, a tablet computer, a telephone, a notebook computer, a computer screen, a digital camera, a handheld game device, a multimedia display, a vehicle display, or a large-area electronic billboard, but the invention is not limited thereto. In addition, "micro" light-emitting element E as used herein is a light-emitting element having a length dimension of 1 μm to 100 μm. In some embodiments, the micro light-emitting elements E may have a maximum length of 30 μm, or 15 μm. In some embodiments, the micro light-emitting elements E may have a height of less than 10 μm, or even 5 μm. It should be understood, however, that embodiments of the present invention are not necessarily limited thereto, and that aspects of certain embodiments may be applied to larger and perhaps smaller dimensions. The driving substrate 110 is, for example, a Complementary Metal Oxide Semiconductor (CMOS) substrate, a Liquid Crystal On Silicon (LCOS) substrate, a Thin Film Transistor (TFT) substrate, or other substrates having an operating circuit, and is not limited thereto.
In detail, the three micro light emitting elements E in each pixel region 112 include a first micro light emitting element 120a, a second micro light emitting element 130a and a third micro light emitting element 140a with different colors, wherein an effective light emitting area of the first micro light emitting element 120a is different from an effective light emitting area of the second micro light emitting element 130 a. Preferably, the effective light-emitting area of the first micro light-emitting device 120a is larger than that of the second micro light-emitting device 130a, and the effective light-emitting area of the first micro light-emitting device 120a is larger than that of the third micro light-emitting device 140 a. In each pixel region 112, the orthogonal projection length L1 of the first micro light-emitting device 120a on the driving substrate 110 is substantially equal to the orthogonal projection length L2 of the second micro light-emitting device 130a on the driving substrate 110, and the orthogonal projection width of the first micro light-emitting device 120a is substantially the same as the orthogonal projection width (not shown) of the second micro light-emitting device 130 a. That is, the first micro light emitting elements 120a and the second micro light emitting elements 130a have the same size. The orthographic projection length is illustrated in a cross-sectional structure, but is not limited to the cross-section and direction as shown in the figure.
As shown in fig. 1B and fig. 1C, in each pixel region 112, the first micro light emitting device 120a sequentially includes a first type semiconductor layer 122a, an active layer 124a, a second type semiconductor layer 126a and a via 128a, wherein the via 128a penetrates through the second type semiconductor layer 126a, the active layer 124a and a portion of the first type semiconductor layer 122 a. The second micro light emitting device 130a sequentially includes a first type semiconductor layer 132a, an active layer 134a, a second type semiconductor layer 136a and a via 138a, wherein the via 138a penetrates through the second type semiconductor layer 136a, the active layer 134a and a portion of the first type semiconductor layer 132 a. In particular, the aperture H1 of the via 128a of the first micro light emitting device 120a is smaller than the aperture H2 of the via 138a of the second micro light emitting device 130a, such that the length of the active layer 124a of the first micro light emitting device 120a is greater than the length of the active layer 134a of the second micro light emitting device 130 a. Therefore, the effective light emitting area of the first micro light emitting device 120a is larger than the effective light emitting area of the second micro light emitting device 130 a. It should be noted that the effective light-emitting area described herein depends on the area of the active layers 124a and 134a participating in light emission. Preferably, the ratio of the effective light-emitting area of the first micro light-emitting device 120a to the effective light-emitting area of the second micro light-emitting device 130a is between 1.5 and 5.
Here, the first Micro light emitting element 120a and the second Micro light emitting element 130a may be, for example, a Vertical Micro light emitting diode (Vertical Type Micro LED) or a Flip-Chip Micro light emitting diode (Flip-Chip Type Micro LED), and the maximum width thereof may be between 1 micron and 100 microns, preferably between 3 microns and 50 microns. The height of the first type semiconductor layers 122a, 132a on the vertical cross section may be between 1 micron and 5 microns, the height of the active layers 124a, 134a on the vertical cross section may be between 0.1 micron and 1 micron, and the height of the second type semiconductor layers 126a, 136a on the vertical cross section may be between 0.1 micron and 1 micron, so that the overall thickness of the first micro light emitting device 120a and the second micro light emitting device 130a may be controlled between 1 micron and 6 microns to ensure the yield of the subsequent process and the characteristics of the end product.
More specifically, referring to fig. 1A, the micro light emitting device E of the present embodiment includes a plurality of first micro light emitting devices 120a, a plurality of second micro light emitting devices 130a, and a plurality of third micro light emitting devices 140a, wherein the first micro light emitting devices 120a, the second micro light emitting devices 130a, and the third micro light emitting devices 140a emit different color lights, respectively, thereby providing the display apparatus 100 for displaying full color images. The forward projection areas of the first micro light-emitting device 120a, the second micro light-emitting device 130a and the third micro light-emitting device 140a on the driving substrate 110 are the same, that is, the first micro light-emitting device 120a, the second micro light-emitting device 130a and the third micro light-emitting device 140a have the same size. For example, the first micro light-emitting device 120a is a red micro light-emitting device, the second micro light-emitting device 130a is a blue micro light-emitting device, and the third micro light-emitting device 140a is a green micro light-emitting device. As shown in fig. 1A, the present embodiment only schematically illustrates three micro light emitting devices E in each pixel region 112, namely, a first micro light emitting device 120a, a second micro light emitting device 130a and a third micro light emitting device 140a, but the invention is not limited thereto, and those skilled in the art can change the number of the micro light emitting devices E according to actual requirements after considering the present invention. In addition, the structural features of the third micro light emitting device 140a are completely the same as those of the second micro light emitting device 130a, and are not described herein again.
In short, in the display device 100 of the present embodiment, the forward projection areas of the micro light emitting elements E in each pixel region 112 on the driving substrate 110 are the same. The design that the aperture H1 of the via 128a of the first micro light emitting device 120a is smaller than the aperture H2 of the via 138a of the second micro light emitting device 130a allows the area of the active layer 124a of the first micro light emitting device 120a to be larger than the area of the active layer 134a of the second micro light emitting device 130 a. In this way, the effective light emitting area of the first micro light emitting device 120a is larger than the effective light emitting area of the second micro light emitting device 130 a. That is, the micro light-emitting devices E in each pixel region 112 have the same size, but at least two micro light-emitting devices E with different light-emitting colors have different effective light-emitting areas. The design balances the influence of human eyes on color perception and improves display quality, and meanwhile, the display device 100 of the embodiment has better electrical reliability, manufacturing yield and lower manufacturing cost.
It should be noted that the following embodiments follow the reference numerals and parts of the contents of the foregoing embodiments, wherein the same reference numerals are used to indicate the same or similar elements, and the description of the same technical contents is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
Fig. 2A and fig. 2B are schematic cross-sectional views illustrating a first micro light-emitting device and a second micro light-emitting device of a display device according to another embodiment of the invention. Referring to fig. 1B, fig. 1C, fig. 2A and fig. 2B, the first micro light-emitting device 120B and the second micro light-emitting device 130B of the present embodiment are similar to the first micro light-emitting device 120a and the second micro light-emitting device 130a of fig. 1B and fig. 1C, respectively, and the difference therebetween is: in the present embodiment, in each pixel region 112 (see fig. 1A), the first micro light emitting device 120b sequentially includes a first type semiconductor layer 122b, an active layer 124b and a second type semiconductor layer 126b, wherein the active layer 124b has a low resistance region R11 and a high resistance region R12 surrounding the low resistance region R11. The second micro light emitting device 130b sequentially includes a first type semiconductor layer 132b, an active layer 134b and a second type semiconductor layer 136b, wherein the active layer 134b has a low resistance region R21 and a high resistance region R22 surrounding the low resistance region R21. In particular, the high resistance region R12 of the active layer 124b of the first micro-light emitting device 120b is smaller than the high resistance region R22 of the active layer 134b of the second micro-light emitting device 130b, so that the effective light emitting area of the first micro-light emitting device 120b is larger than that of the second micro-light emitting device 130b under the driving of a current, thereby balancing the influence of human eyes on color perception and improving display quality. Similar to the embodiment shown in fig. 1B and 1C, the forward projection areas of the first micro light-emitting device 120B and the second micro light-emitting device 130B on the driving substrate 110 are the same, that is, the first micro light-emitting device 120B and the second micro light-emitting device 130B have substantially the same area size. Here, the high-resistance regions R12 and R22 are formed by, for example, high-energy lattice destruction or impurity doping, but not limited thereto.
Fig. 3A and fig. 3B are schematic cross-sectional views illustrating a first micro light-emitting device and a second micro light-emitting device of a display device according to another embodiment of the invention. Referring to fig. 1B, fig. 1C, fig. 3A and fig. 3B, the first micro light-emitting device 120C and the second micro light-emitting device 130C of the present embodiment are similar to the first micro light-emitting device 120a and the second micro light-emitting device 130a of fig. 1B and fig. 1C, respectively, and the difference therebetween is: in each pixel region 112 (see fig. 1A), the first micro light emitting device 120c sequentially includes a first type semiconductor layer 122c, an active layer 124c and a second type semiconductor layer 126c, and the second micro light emitting device 130c sequentially includes a first type semiconductor layer 132c, an active layer 134c and a second type semiconductor layer 136 c. In particular, the edge of the first type semiconductor layer 122c, the edge of the active layer 124c, and the edge of the second type semiconductor layer 126c of the first micro light emitting device 120c are aligned, and the length of the second micro light emitting device 130c gradually decreases from the first type semiconductor layer 132c to the second type semiconductor layer 136 c. That is, the cross-sectional shape of the first micro light-emitting element 120c in the vertical direction is rectangular, and the cross-sectional shape of the second micro light-emitting element 130c in the vertical direction is trapezoidal. Through the structural design of the first micro light emitting device 120c and the second micro light emitting device 130c, the length of the active layer 124c of the first micro light emitting device 120c is greater than the length of the active layer 134c of the second micro light emitting device 130 c. In this way, when the orthographic projection length L1 of the first micro light-emitting device 120c on the driving substrate 110 (see fig. 1A) is substantially equal to the orthographic projection length L2 of the second micro light-emitting device 130c on the driving substrate 110, that is, the first micro light-emitting device 120c and the second micro light-emitting device 130c have the same size, the effective light-emitting area of the first micro light-emitting device 120c is still larger than that of the second micro light-emitting device 130c, so as to balance the influence of human eyes on color perception and improve display quality.
Fig. 3C and fig. 3D are schematic cross-sectional views illustrating a first micro light-emitting device and a second micro light-emitting device of a display device according to another embodiment of the invention. Referring to fig. 3A, fig. 3B, fig. 3C and fig. 3D, the first micro light-emitting device 120C' and the second micro light-emitting device 130C of the present embodiment are similar to the first micro light-emitting device 120C and the second micro light-emitting device 130C of fig. 3A and fig. 3B, respectively, and the difference therebetween is: the cross-sectional shape of the first micro light emitting device 120c ' of the present embodiment is trapezoidal, that is, the length of the first micro light emitting device 120c ' gradually decreases from the first type semiconductor layer 122c ' to the active layer 124c ' and the second type semiconductor layer 126c '. Here, the rate of the trapezoidal sectional length taper of the first micro light emitting element 120 c' is different from the rate of the trapezoidal sectional length taper of the second micro light emitting element 130 c. When the orthogonal projection length L1 of the first micro light-emitting device 120c ' on the driving substrate 110 (see fig. 1A) is substantially equal to the orthogonal projection length L2 of the second micro light-emitting device 130c on the driving substrate 110, that is, the first micro light-emitting device 120c ' and the second micro light-emitting device 130 have the same size, the effective light-emitting area of the first micro light-emitting device 120c ' is still larger than that of the second micro light-emitting device 130 c.
Fig. 4A and 4B are schematic cross-sectional views illustrating a first micro light-emitting device and a second micro light-emitting device of a display device according to another embodiment of the invention. Referring to fig. 3A and fig. 3B, the first micro light-emitting device 120d and the second micro light-emitting device 130d of the present embodiment are similar to the first micro light-emitting device 120c and the second micro light-emitting device 130c of fig. 3A and fig. 3B, respectively, and the difference therebetween is: in each pixel region 112 (see fig. 1A), the first micro light emitting device 120d sequentially includes a first type semiconductor layer 122d, an active layer 124d, a second type semiconductor layer 126d, and a current distribution layer 129d, wherein the length of the first micro light emitting device 120d gradually decreases from the edge of the first type semiconductor layer 122d to the edge of the active layer 124d and the edge of the second type semiconductor layer 126 d. The second micro light emitting device 130d sequentially includes a first type semiconductor layer 132d, an active layer 134d, a second type semiconductor layer 136d, and a current distribution layer 139d, wherein the length of the second micro light emitting device 130d gradually decreases from the edge of the first type semiconductor layer 132d to the edge of the active layer 134d and the edge of the second type semiconductor layer 136 d. That is, the cross-sectional shapes of the first micro light-emitting element 120d and the second micro light-emitting element 130d in the vertical direction are similar trapezoids. However, the contact area between the current distribution layer 139d of the second micro light emitting device 130d and the second type semiconductor layer 136d is smaller than the contact area between the current distribution layer 129d of the first micro light emitting device 120d and the second type semiconductor layer 126 d. The first micro light-emitting device 120d and the second micro light-emitting device 130d can control the position and the area of the current gathering region through the current distribution layer 129d and 139d, respectively, so as to improve the light-emitting efficiency and the overall display quality of the first micro light-emitting device 120d and the second micro light-emitting device 130 d.
In particular, in the present embodiment, the edge of the current distribution layer 129d of the first micro light emitting device 120d is aligned with the edge of the second type semiconductor layer 126d, and the current distribution layer 139d of the second micro light emitting device 130d exposes a portion of the second type semiconductor layer 136 d. Through the structural design of the first micro light emitting device 120d and the second micro light emitting device 130d, the length of the current distribution layer 129d of the first micro light emitting device 120d is greater than the length of the current distribution layer 139d of the second micro light emitting device 130 d. In this way, when driven by a current, the effective light-emitting area of the first micro light-emitting device 120d is larger than that of the second micro light-emitting device 130d, so as to balance the influence of human eyes on color perception and improve display quality.
Fig. 5A and 5B are schematic cross-sectional views illustrating a first micro light-emitting device and a second micro light-emitting device of a display device according to another embodiment of the invention. Referring to fig. 1B, fig. 1C, fig. 3A and fig. 3B, the first micro light-emitting device 120e and the second micro light-emitting device 130e of the present embodiment are similar to the first micro light-emitting device 120a and the second micro light-emitting device 130a of fig. 1B and fig. 1C, respectively, and the difference therebetween is: in each pixel region 112 (see fig. 1A), the first micro light emitting device 120e sequentially includes a first type semiconductor layer 122e, an active layer 124e and a second type semiconductor layer 126e, and the second micro light emitting device 130e sequentially includes a first type semiconductor layer 132e, an active layer 134e and a second type semiconductor layer 136 e. In particular, the edge of the first type semiconductor layer 122e, the edge of the active layer 124e and the edge of the second type semiconductor layer 126e of the first micro light emitting device 120e are aligned, the active layer 134e of the second micro light emitting device 130e exposes a portion of the first type semiconductor layer 132e, and the edge of the second type semiconductor layer 136e of the second micro light emitting device 130e is aligned with the edge of the active layer 134 e. In other words, the embodiment shown in fig. 5A and 5B does not change the area of the active layers 124e and 134e by the size of the via hole, but reduces the area of the entire active layers 124e and 134e and the second- type semiconductor layers 126e and 136e by the edge. The problem of edge leakage can be further improved, and the light emitting efficiency of the micro light emitting devices 120e and 130e can be improved. Through the structural design of the first micro light emitting device 120e and the second micro light emitting device 130e, the length of the active layer 124e of the first micro light emitting device 120e is greater than the length of the active layer 134e of the second micro light emitting device 130e, that is, the area of the active layer 124e of the first micro light emitting device 120e is greater than the area of the active layer 134e of the second micro light emitting device 130 e. In this way, the effective light-emitting area of the first micro light-emitting device 120e is larger than that of the second micro light-emitting device 130e, so as to balance the influence of human eyes on color perception and improve display quality.
Fig. 6 is a schematic top view of a display device according to another embodiment of the present invention. Referring to fig. 1A and fig. 6, the display device 100' of the present embodiment is similar to the display device 100 of fig. 1A, and the difference between the two is: the effective light emitting area of the first micro light emitting device 120f emitting red light is larger than that of the third micro light emitting device 140f emitting green light, and the effective light emitting area of the third micro light emitting device 140f emitting green light is larger than that of the second micro light emitting device 130f emitting blue light. Here, the through hole 128f of the first micro light emitting device 120f is smaller than the through hole 148f of the third micro light emitting device 140f, and the through hole 148f of the third micro light emitting device 140f is smaller than the through hole 138f of the second micro light emitting device 130f, so that the micro light emitting devices E' have different effective light emitting areas while maintaining similar dimensions. In one embodiment, the area ratio of the active layers of the first micro light emitting device 120f and the second micro light emitting device 130f is 1.5 to 5, and the area ratio of the active layers of the first micro light emitting device 120f and the third micro light emitting device 140f is 1 to 3.
In summary, in the display device of the present invention, the forward projection areas of the micro light-emitting devices in each pixel region on the driving substrate are the same, and at least two micro light-emitting devices in each pixel region have different effective light-emitting areas. That is, the micro light emitting devices in each pixel region have the same size, and at least two micro light emitting devices have different effective light emitting areas. The design balances the influence of human eyes on color perception and improves display quality, and meanwhile, the display device has better electrical reliability and lower manufacturing cost.
Although the present invention has been described with reference to the above embodiments, it should be understood that the invention is not limited to the embodiments, and various changes and modifications can be made by those skilled in the art without departing from the spirit and scope of the invention.
Claims (12)
1. A display device, comprising:
a driving substrate having a plurality of pixel regions; and
a plurality of micro light emitting devices disposed in the plurality of pixel regions of the driving substrate and electrically connected to the driving substrate, each of the plurality of micro light emitting devices including a first type semiconductor layer, an active layer and a second type semiconductor layer, wherein each of the plurality of pixel regions has a plurality of micro light emitting devices disposed therein, the plurality of micro light emitting devices in each of the plurality of pixel regions have the same orthographic projection area on the driving substrate, and the active layers of at least two of the plurality of micro light emitting devices in each of the plurality of pixel regions have different effective light emitting areas.
2. The display device according to claim 1, wherein at least two of the plurality of micro light-emitting elements in each of the plurality of pixel regions include a first micro light-emitting element emitting red light and a second micro light-emitting element emitting blue light, and an effective light-emitting area of the first micro light-emitting element is larger than an effective light-emitting area of the second micro light-emitting element.
3. The display device according to claim 2, wherein in each of the plurality of pixel regions, an orthogonal projection length of the first micro light-emitting element on the driving substrate is equal to an orthogonal projection length of the second micro light-emitting element on the driving substrate.
4. The display device according to claim 2, wherein each of the plurality of micro light-emitting elements comprises a first type semiconductor layer, an active layer, a second type semiconductor layer, and a via hole, and the via hole sequentially penetrates through the second type semiconductor layer, the active layer, and a portion of the first type semiconductor layer, and an aperture of the via hole of the first micro light-emitting element is smaller than an aperture of the via hole of the second micro light-emitting element in each of the plurality of pixel regions.
5. The display device according to claim 4, wherein the active layer area of the first micro light-emitting elements is larger than the active layer area of the second micro light-emitting elements.
6. The display device according to claim 2, wherein each of the plurality of micro light-emitting elements comprises a first type semiconductor layer, an active layer and a second type semiconductor layer, the active layer has a low resistance region and a high resistance region surrounding the low resistance region, and the area of the high resistance region of the active layer of the first micro light-emitting element is smaller than the area of the high resistance region of the active layer of the second micro light-emitting element in each of the plurality of pixel regions.
7. The display device according to claim 2, wherein each of the plurality of micro light emitting elements comprises a first type semiconductor layer, an active layer, and a second type semiconductor layer, an edge of the first type semiconductor layer, an edge of the active layer, and an edge of the second type semiconductor layer of the first micro light emitting element are aligned with each other in each of the plurality of pixel regions, and a length of the second micro light emitting element is gradually decreased from the first type semiconductor layer toward the second type semiconductor layer.
8. The display device according to claim 2, wherein each of the plurality of micro light-emitting elements comprises a first type semiconductor layer, an active layer, a second type semiconductor layer, and a current distribution layer, in each of the plurality of pixel regions, an edge of the first type semiconductor layer, an edge of the active layer, and an edge of the second type semiconductor layer are aligned with each other, and the edge of the current distribution layer of the first micro light-emitting element is cut to be flush with the edge of the second type semiconductor layer, and the current distribution layer of the second micro light emitting device exposes a portion of the second type semiconductor layer, and the contact area of the current distribution layer of the second micro light-emitting element and the second type semiconductor layer is smaller than that of the current distribution layer of the first micro light-emitting element and the second type semiconductor layer.
9. The display device according to claim 2, wherein each of the plurality of micro light-emitting elements comprises a first type semiconductor layer, an active layer, and a second type semiconductor layer, an edge of the first type semiconductor layer, an edge of the active layer, and an edge of the second type semiconductor layer of the first micro light-emitting element are aligned with each other in each of the plurality of pixel regions, the active layer of the second micro light-emitting element exposes a portion of the first type semiconductor layer, and an edge of the second type semiconductor layer of the second micro light-emitting element is aligned with an edge of the active layer.
10. The display device according to claim 2, wherein a ratio of an effective light emitting area of the first micro light-emitting elements to an effective light emitting area of the second micro light-emitting elements is between 1.5 and 5.
11. The display device according to claim 1, wherein each of the plurality of pixel regions includes a first micro light-emitting element emitting red light, a second micro light-emitting element emitting blue light, and a third micro light-emitting element emitting green light, and an effective light-emitting area of the first micro light-emitting element is larger than that of the second micro light-emitting element, and an effective light-emitting area of the second micro light-emitting element is larger than that of the third micro light-emitting element.
12. The display device according to claim 1, wherein each of the plurality of pixel regions includes therein a first micro light-emitting element that emits red light, a second micro light-emitting element that emits blue light, and a third micro light-emitting element that emits green light, and an effective light-emitting area of the first micro light-emitting element is larger than an effective light-emitting area of the second micro light-emitting element or the third micro light-emitting element.
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