CN110571311B - Multi-quantum well structure, photoelectric device epitaxial wafer and photoelectric device - Google Patents
Multi-quantum well structure, photoelectric device epitaxial wafer and photoelectric device Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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Abstract
A multi-quantum well structure, a photoelectric device epitaxial wafer and a photoelectric device are provided, wherein the multi-quantum well structure is composed of quantum well layers and quantum barrier layers which are alternately grown, and each quantum well layer and each quantum barrier layer are of uneven structures. The quantum well layer and the quantum barrier layer of the multi-quantum well structure are arranged to be of structures with uneven components and uneven structures, so that the optical recombination efficiency, the internal quantum efficiency and the luminous efficiency of a current carrier are improved, and the quantum well layer and the quantum barrier layer are applied to an epitaxial wafer and a photoelectric device of the photoelectric device, so that the preparation of a high-power light-emitting diode, a high-power light-emitting laser and a high-power light-emitting detector is realized.
Description
Technical Field
The present disclosure relates to the field of semiconductor technologies, and in particular, to a multiple quantum well structure, an epitaxial wafer of a photoelectric device, and a photoelectric device.
Background
Ultraviolet Light Emitting diodes (UVLEDs) are mostly made of third-generation semiconductor materials, indium aluminum gallium nitride (InAlGaN) or boron aluminum gallium nitride (BAlGaN) materials have the characteristics of forbidden bandwidth, direct band gap and the like, and InAlGaN or BAlGaN-based UVLEDs have wide application prospects in the fields of sterilization, disinfection, medical treatment, non-line-of-sight optical communication and the like. The AlGaN-based UVLED can realize continuous adjustability of the light-emitting wavelength within the range of 200nm-360nm, and can realize large-scale production on cheap silicon, sapphire, gallium nitride, aluminum nitride and silicon carbide substrates by a heteroepitaxy method.
The existing AlGaN-based UVLED usually adopts a multi-quantum well structure with uniform components and a smooth structure as an active region (namely a light emitting region or an electron hole recombination region) of a device, and the photon recombination efficiency of a current carrier in the two-dimensional quantum well structure is lower, so that the internal quantum efficiency, the external quantum efficiency and the luminous efficiency of the device are lower, and the electro-optic conversion efficiency of a light emitting diode is lower. Like the light emitting diode, other optoelectronic devices such as light emitting lasers and light emitting detectors have problems of low internal quantum efficiency, external quantum efficiency, light emitting rate and electro-optical conversion efficiency.
Disclosure of Invention
Technical problem to be solved
The present disclosure provides a multiple quantum well structure, a photoelectric device epitaxial wafer and a photoelectric device, which solve the above technical problems.
(II) technical scheme
The disclosure provides a multi-quantum well structure, which consists of quantum well layers and quantum barrier layers which are alternately grown, wherein each of the quantum well layers and the quantum barrier layers is of an uneven structure.
Optionally, an included angle between the quantum well layer and the quantum barrier layer and a horizontal plane perpendicular to the growth direction of the quantum well layer and the quantum barrier layer is 1 ° to 10 °.
Optionally, the quantum well layer is BxAlyGa1-x-yN quantum well or InxAlyGa1-x-yX is more than or equal to 0 and less than 1, y is more than or equal to 0 and less than or equal to 1 in the N quantum well, and the quantum barrier layer is BmAlnGa1-m-nN quantum barrier or InmAlnGa1-m-nM is more than or equal to 0 and less than 1, and N is more than or equal to 0 and less than or equal to 1.
Optionally, B isxAlyGa1-x-yN quantum well and BmAlnGa1-m-nIn the N quantum barrier, the B component, the Al component and the Ga component are not uniformly distributed, and the InxAlyGa1-x-yN quantum well and InmAlnGa1-m-nIn the N quantum barrier, the In component, the Al component, and the Ga component are not uniformly distributed.
Optionally, the uneven structure comprises a wavy structure with the same thickness, an asymmetric triangular wavy structure and a structure with different thicknesses.
The present disclosure also provides an epitaxial wafer of a photoelectric device, including the above multiple quantum well structure.
Optionally, the epitaxial wafer further includes a substrate, one surface of the substrate is an inclined surface or a surface etched with a predetermined pattern, or the surface is a surface having a chamfer angle of 1 ° to 15 °, and the other structures of the epitaxial wafer and the multiple quantum well structure are sequentially grown on the surface.
The present disclosure also provides a photoelectric device including the above photoelectric device epitaxial wafer.
Optionally, the optoelectronic device is one of a light emitting diode, a light emitting laser, and a light emitting detector.
(III) advantageous effects
The multi-quantum well structure, the photoelectric device epitaxial wafer and the photoelectric device have the following beneficial effects:
(1) the multi-quantum well structure is set to be an AlGaN quantum well structure with uneven components, potential energy in the quantum well is non-uniform due to non-uniform distribution of Al and Ga components in the quantum well, the localization effect of carriers is enhanced, the movement of the carriers in the quantum well is effectively limited, and the constraint of the carriers on a three-dimensional scale is realized;
(2) the optical recombination efficiency in the quantum well of the photoelectric device is improved, the internal quantum efficiency, the external quantum efficiency and the optical output power of the device are greatly improved, and the preparation of high-power light-emitting diodes, high-power light-emitting lasers and high-power light-emitting detector devices is realized.
Drawings
Fig. 1 schematically illustrates a structural schematic diagram of a multiple quantum well structure provided by an embodiment of the present disclosure;
FIG. 2A schematically shows a transmission electron microscope image of a multiple quantum well structure in a prior art optoelectronic device;
fig. 2B schematically illustrates a transmission electron microscope view of a multiple quantum well structure provided by an embodiment of the present disclosure;
fig. 3 schematically shows a structural schematic diagram of a light emitting diode epitaxial wafer provided by an embodiment of the present disclosure.
Description of reference numerals:
1-a substrate; a 2-N type conductive layer; 3-a multi-quantum well layer; a 4-P-type electron blocking layer; 5-P type conductive layer.
Detailed Description
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
Fig. 1 schematically shows a structural schematic diagram of a multiple quantum well structure provided by an embodiment of the present disclosure. Referring to fig. 1, a multi-quantum well structure of the present disclosure is described in detail with reference to fig. 2A and 2B.
The multiple quantum well structure consists of quantum well layers and quantum barrier layers which are alternately grown, and each quantum well layer and each quantum barrier layer are of uneven structures. The uneven structure is, for example, a wavy structure with the same thickness, or is, for example, another structure with different thicknesses, or is, for example, an asymmetric triangular wavy structure.
Preferably, an included angle between the quantum well layer and the quantum barrier layer of the uneven structure and a horizontal plane perpendicular to the growth direction of the quantum well layer and the quantum barrier layer is 1-10 degrees, and in the included angle range, the larger the ripple of the uneven structure is, that is, the larger the included angle is, the higher the optical recombination efficiency, the internal quantum efficiency and the light emitting efficiency of the photoelectric device formed based on the multiple quantum well structure are.
The material of the quantum well layer and the quantum barrier layer In the multiple quantum well structure includes, for example, aluminum (Al), gallium (Ga), and nitrogen (N), and may further include other elements such as boron (B) or indium (In), and the like, and the quantum well layer is BxAlyGa1-x-yN quantum well or InxAlyGa1-x-yOne of N quantum wells, x is more than or equal to 0 and less than 1, y is more than or equal to 0 and less than or equal to 1, and the quantum barrier layer is BmAlnGa1-m-nN quantum barrier or InmAlnGa1-m-nM is more than or equal to 0 and less than 1, and N is more than or equal to 0 and less than or equal to 1. The multiple quantum well structure may be BxAlyGa1-x-yN quantum well and BmAlnGa1-m-nAn alternating structure of N quantum barriers, or BxAlyGa1-x-yN quantum well and InmAlnGa1-m-nAlternating structure of N quantum barriers, or InxAlyGa1-x-yN quantum well and BmAlnGa1-m-nAlternating structure of N quantum barriers, or InxAlyGa1-x- yN quantum well and InmAlnGa1-m-nAn alternating structure of N quantum barriers.
The value ranges of x, y, m and n show that the quantum well layer and the quantum barrier layer can be binary alloy, such as GaN or AlN; or ternary alloys such as AlGaN, BGaN, InGaN, BALN, InAlN; quaternary alloys such as BAlGaN, InAlGaN are also possible. In the embodiment of the present disclosure, the quantum well layer and the quantum barrier layer may be any combination of the binary alloy, the ternary alloy, and the quaternary alloy, for example, the quantum well layer is binary alloy GaN, and the quantum barrier layer is quaternary alloy InAlGaN. The sum of the proportions of positive ions in the binary alloy, the ternary alloy and the quaternary alloy is 100 percent.
BxAlyGa1-x-yN quantum well and BmAlnGa1-m-nIn the N quantum barrier, the B component, the Al component and the Ga component are not uniformly distributed, or InxAlyGa1-x-yN quantum well and InmAlnGa1-m-nIn the N quantum barrier, In component, Al component, and Ga component are unevenly distributed, so that the quantum barrier is uneven.
Taking the multi-quantum well structure as an example of an alternating structure formed by an AlGaN quantum well layer and an AlGaN quantum barrier layer, referring to fig. 2A, fig. 2A shows a transmission electron microscope image of the multi-quantum well structure in the existing photoelectric device, it can be obviously observed that Al and Ga elements are uniformly distributed in the flat multi-quantum well structure, and the thicknesses of the same quantum well layer and the quantum barrier layer are kept consistent in the horizontal direction.
Referring to fig. 2B, fig. 2B shows a transmission electron microscope image of a multiple quantum well structure in a photoelectric device according to an embodiment of the present disclosure, it can be obviously observed that in the multiple quantum well structure which is not flat, the multiple quantum well structure has ripples and is not uniform in structure, and thicknesses of the same quantum well layer and the same quantum barrier layer are not uniform in a horizontal direction. The multi-quantum well structure with uneven components and structure can better realize the localization effect and the confinement effect of carriers, thereby improving the optical recombination efficiency of the carriers in the quantum well, improving the internal quantum efficiency and the luminous efficiency of photoelectric devices (such as ultraviolet light emitting diodes, photoelectric detectors, photoelectric lasers and the like), and realizing the preparation of high-power photoelectric devices.
The embodiment of the disclosure also discloses an epitaxial wafer of an optoelectronic device, which comprises the multi-quantum well structure in the embodiment shown in fig. 1.
In the embodiment of the present disclosure, the optoelectronic device epitaxial wafer further includes a substrate, where the substrate is a sapphire substrate, a silicon substrate, a metal substrate, silicon carbide, gallium nitride, aluminum nitride, and the like, and no limitation is imposed on the material of the substrate. One surface of the substrate is an inclined surface with a chamfer angle, or a surface etched with a preset pattern, or a surface with a chamfer angle of 1-15 degrees (the surface may not be a flat surface), other structures of the optoelectronic device epitaxial wafer are sequentially grown on the surface, and a multi-quantum well structure sequentially grown on the surface of the inclined substrate or the surface of the substrate etched with the preset pattern or the surface with the chamfer angle is an uneven structure, and the preset pattern is not limited in the embodiment of the disclosure.
It can be understood that other structures of the epitaxial wafer of the optoelectronic device besides the uneven multi-quantum well structure are conventional structures, and are not described in detail in the embodiments of the present disclosure.
Only taking a photoelectric device epitaxial wafer as an example of the light emitting diode epitaxial wafer shown in fig. 3, the light emitting diode epitaxial wafer sequentially comprises a substrate 1, an N-type conducting layer 2, a multiple quantum well layer 3, a P-type electron blocking layer 4 and a P-type conducting layer 5 from bottom to top, and the multiple quantum well 3 is a multiple quantum well structure provided by the embodiment of the disclosure. The N-type conducting layer 2 is epitaxially grown on the substrate 1, the multiple quantum well layer 3 is epitaxially grown on the N-type conducting layer 2, the P-type electron blocking layer 4 is grown on the multiple quantum well layer 3, and the P-type conducting layer 5 is grown on the P-type electron blocking layer 4. In addition, the structures of the N-type conductive layer, the P-type electron blocking layer, and the P-type conductive layer of the conventional led epitaxial wafer are all applicable to the structures of the N-type conductive layer 2, the P-type electron blocking layer 4, and the P-type conductive layer 5 in the embodiments of the present disclosure.
The embodiment of the present disclosure also shows a photoelectric device, including the epitaxial wafer of the photoelectric device in the above embodiment.
In the embodiment of the present disclosure, the optoelectronic device is, for example, one of a light emitting diode, a light emitting laser, and a light emitting detector. The optoelectronic device epitaxial wafer in the above embodiments can be applied in an optoelectronic device, for example, an electrode is prepared on a light emitting diode epitaxial wafer to form a light emitting diode chip in a packaging manner. The multi-quantum well layer with the uneven structure in the photoelectric device has higher optical recombination efficiency, internal quantum efficiency and external quantum efficiency, so that the formed photoelectric device is a high-power photoelectric device and has higher luminous efficiency.
The embodiment of the present disclosure shows a method for manufacturing an epitaxial wafer of a photoelectric device, which takes the preparation of an epitaxial wafer including a multiple quantum well structure in the embodiment of the present disclosure, and also takes the preparation of an epitaxial wafer of a light emitting diode as an example, and mainly includes the following operations:
s1, an N-type conductive layer 2 is prepared on the substrate 1.
S2, a multiple quantum well layer 3 is prepared on the N-type conductive layer 2, the multiple quantum well layer 3 being a multiple quantum well structure in the embodiment shown in fig. 1.
S3, preparing the P-type electron blocking layer 4 on the multiple quantum well layer 3.
S4, a P-type conductive layer 5 is prepared on the P-type electron blocking layer 4.
In the embodiment of the present disclosure, a predetermined pattern is etched on one surface of the cleaned substrate 1, or the surface is etched to be an inclined surface having a certain chamfer angle, or the surface is polished to be a surface having a chamfer angle of 1 ° to 15 °. Then, an N-type conducting layer 2, a multi-quantum well layer 3, a P-type electron blocking layer 4 and a P-type conducting layer 5 can be sequentially prepared on the substrate 1 by using a molecular beam epitaxy or metal organic chemical deposition growth method, and the molecular beam epitaxy or metal organic chemical deposition growth method has the advantages of easy growth control, large-scale growth and the like. The molecular beam epitaxy or metal organic chemical deposition growth method in the embodiments of the disclosure is the same as the conventional molecular beam epitaxy or metal organic chemical deposition growth method, and is not described herein again.
So far, the disclosed multi-quantum well structure, the photoelectric device epitaxial wafer and the photoelectric device are explained in detail, the multi-quantum well structure is set to be a structure with uneven components and uneven structure, and the uneven multi-quantum well structure is applied to the photoelectric device epitaxial wafer and the photoelectric device, so that the optical recombination efficiency, the internal quantum efficiency and the like of a carrier in the epitaxial wafer are improved, and the preparation of a high-power photoelectric device is realized.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. A multi-quantum well structure is composed of quantum well layers and quantum barrier layers which are alternately grown, wherein each quantum well layer and each quantum barrier layer are of continuous wave-shaped uneven structures;
the multi-quantum well structure is obtained by extending the quantum well layer and the quantum barrier layer on a substrate with a chamfer angle of 1-15 degrees.
2. The multiple quantum well structure of claim 1, wherein the quantum well layer and the quantum barrier layer have an angle of 1 ° to 10 ° with respect to a horizontal plane perpendicular to the growth direction thereof.
3. The multiple quantum well structure of claim 1, wherein the quantum well layer is BxAlyGa1-x-yN quantum well or InxAlyGa1-x-yX is more than or equal to 0 and less than 1, y is more than or equal to 0 and less than or equal to 1 in the N quantum well, and the quantum barrier layer is BmAlnGa1-m-nN quantum barrier or InmAlnGa1-m-nM is more than or equal to 0 and less than 1, and N is more than or equal to 0 and less than or equal to 1.
4. The multiple quantum well structure of claim 3, wherein said BxAlyGa1-x-yN quantum well and BmAlnGa1-m-nIn the N quantum barrier, the B component, the Al component and the Ga component are not uniformly distributed, and the InxAlyGa1-x-yN quantum well and InmAlnGa1-m-nIn the N quantum barrier, the In component, the Al component, and the Ga component are not uniformly distributed.
5. The multi-quantum well structure of claim 1, wherein said continuous waved irregularities are waved structures of equal thickness, asymmetric triangular waved structures, or structures of different thickness.
6. An optoelectronic device epitaxial wafer comprising a multiple quantum well structure according to any one of claims 1 to 5.
7. The photoelectric device epitaxial wafer of claim 6, further comprising a substrate, wherein one surface of the substrate is an inclined surface or a surface etched with a predetermined pattern, or the surface is a surface having a chamfer angle of 1 ° to 15 °, and the other structures of the epitaxial wafer and the multiple quantum well structure are sequentially grown on the surface.
8. An optoelectronic device comprising an optoelectronic device epitaxial wafer as claimed in any one of claims 6 to 7.
9. The optoelectronic device of claim 8, wherein the optoelectronic device is one of a light emitting diode, a light emitting laser, a light emitting detector.
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| CN113054063B (en) * | 2021-02-04 | 2023-03-14 | 中国科学院宁波材料技术与工程研究所 | Ultraviolet light emitting diode, ultraviolet LED epitaxial layer structure and preparation method thereof |
| CN115360277B (en) * | 2022-10-21 | 2023-02-03 | 江西兆驰半导体有限公司 | Deep ultraviolet light-emitting diode epitaxial wafer, preparation method and LED |
| CN116314504B (en) * | 2023-05-24 | 2023-08-15 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
| CN116682916B (en) * | 2023-08-03 | 2023-11-21 | 江西兆驰半导体有限公司 | Multi-quantum well layer, preparation method thereof, epitaxial wafer and light-emitting diode |
| CN117476829B (en) * | 2023-12-28 | 2024-03-29 | 江西兆驰半导体有限公司 | Ultraviolet light-emitting diode epitaxial wafer, preparation method thereof and ultraviolet light-emitting diode |
| CN117894897A (en) * | 2024-03-15 | 2024-04-16 | 江西兆驰半导体有限公司 | LED epitaxial wafer, preparation method thereof and LED chip |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102332515A (en) * | 2011-09-16 | 2012-01-25 | 协鑫光电科技（张家港）有限公司 | LED (light-emitting diode) and manufacturing method thereof |
| CN103824915A (en) * | 2014-03-13 | 2014-05-28 | 华延芯光（北京）科技有限公司 | Gallium nitride-based light-emitting diode and preparation method thereof |
| CN104393136A (en) * | 2014-10-31 | 2015-03-04 | 厦门乾照光电股份有限公司 | Preparation method of GaN-based LED epitaxial wafer enhancing luminescence efficiency |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1894771B (en) * | 2003-04-15 | 2012-07-04 | 加利福尼亚大学董事会 | Non-polarity (Al, B, Inc, Ga) N Quantum pit |
| JP2005093682A (en) * | 2003-09-17 | 2005-04-07 | Toyoda Gosei Co Ltd | GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS MANUFACTURING METHOD |
| JP5229270B2 (en) * | 2010-05-14 | 2013-07-03 | 豊田合成株式会社 | Group III nitride semiconductor light emitting device manufacturing method |
| CN102299223A (en) * | 2011-09-19 | 2011-12-28 | 厦门乾照光电股份有限公司 | Epitaxial structure of light-emitting diode and manufacturing method thereof |
| CN102842659B (en) * | 2012-08-17 | 2015-12-09 | 圆融光电科技有限公司 | A kind of manufacture method of gallium nitride based light emitting semiconductor device epitaxial wafer |
| CN103413876A (en) * | 2013-08-09 | 2013-11-27 | 西安神光皓瑞光电科技有限公司 | Luminescent device and preparation method thereof |
| CN104638068B (en) * | 2013-11-07 | 2018-08-24 | 上海蓝光科技有限公司 | A kind of substrat structure and preparation method thereof being used for the growth of III-V group-III nitride |
| CN105304770A (en) * | 2015-09-21 | 2016-02-03 | 东莞市中镓半导体科技有限公司 | Preparation method for near ultraviolet (NUV) LED containing Al component and thickness stepwise gradient type quantum barrier structure |
-
2019
- 2019-07-30 CN CN201910699756.2A patent/CN110571311B/en active Active
- 2019-09-27 WO PCT/CN2019/108691 patent/WO2021017145A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102332515A (en) * | 2011-09-16 | 2012-01-25 | 协鑫光电科技（张家港）有限公司 | LED (light-emitting diode) and manufacturing method thereof |
| CN103824915A (en) * | 2014-03-13 | 2014-05-28 | 华延芯光（北京）科技有限公司 | Gallium nitride-based light-emitting diode and preparation method thereof |
| CN104393136A (en) * | 2014-10-31 | 2015-03-04 | 厦门乾照光电股份有限公司 | Preparation method of GaN-based LED epitaxial wafer enhancing luminescence efficiency |
Non-Patent Citations (2)
| Title |
|---|
| "Deep-ultraviolet polychromatic emission from three-dimensionally structured AlGaN quantum wells";Kataoka, K, et al.,;《 APPLIED PHYSICS EXPRESS》;20170131;第10卷(第3期);论文摘要、031001-1页右栏第3段~031001-3页右栏第1段，附图1-4 * |
| "Secrets of GaN substrate properties for high luminousity of InGaN quantum wells";Leszczynski, M., et al.,;《 Proceedings of SPIE》;20080124;第 0196卷;论文摘要、69100G-7页第3段~69100G-10页第1段，附图9-10 * |
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