CN110568636A - Display device based on phase-change material - Google Patents
Display device based on phase-change material Download PDFInfo
- Publication number
- CN110568636A CN110568636A CN201910816529.3A CN201910816529A CN110568636A CN 110568636 A CN110568636 A CN 110568636A CN 201910816529 A CN201910816529 A CN 201910816529A CN 110568636 A CN110568636 A CN 110568636A
- Authority
- CN
- China
- Prior art keywords
- change material
- quantum dot
- layer
- light
- phase change
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
- G02F1/0105—Illuminating devices
Abstract
The invention discloses a display device based on a phase-change material, which comprises a quantum dot light-emitting component, an isolating layer and a filtering component which are sequentially arranged from bottom to top, wherein the quantum dot light-emitting component comprises a first wavelength light-emitting component and a quantum dot film; the filtering component comprises a conducting layer, a phase change material layer and a covering layer which are sequentially arranged from bottom to top, wherein the conducting layer and the covering layer are respectively used as an upper electrode and a lower electrode of the phase change material layer so as to apply voltage on the phase change material layer, and the adjustment of the intensity of monochromatic light emitted by the quantum dot film is realized through the transmissivity change of the phase change material layer when the phase change material layer is mutually converted between an amorphous state and a crystalline state, so that the color display is realized. The filtering component provided by the invention can at least transmit monochromatic light with a certain wavelength of more than 15%, and the utilization efficiency of the quantum dot light-emitting component is greatly improved.
Description
Technical Field
The invention belongs to the technical field of phase-change materials, and particularly relates to a display device based on a phase-change material.
Background
In the traditional liquid crystal display technology, an LED white backlight source is adopted for emitting light, the lower polarizer can convert unpolarized light emitted by an LED into polarized light, 50% of light is absorbed, and the light transmission proportion of the upper polarizer and the lower polarizer is about 95% due to the light absorption of materials; the light transmission proportion of the thin film transistor, the color filter film substrate glass and the liquid crystal is about 95 percent; the color filter film layer is generally coated with one of red, green and blue primary colors, only light waves of the color can pass through the color filter film layer, only one of the three primary colors can pass through the red, green and blue primary colors, so only one third of light can penetrate through the color filter film layer, the color filter film layer absorbs the light due to the material of the color filter film layer, the monochromatic light only has the transmittance of about 85%, and the light transmittance of the color filter film layer is about 28%. By combining the influences of the above various factors, only about 11% of light passing from the LED backlight source to the liquid crystal module can penetrate through the panel, meanwhile, about 50% of light can be lost due to the influence of the aperture opening ratio of the panel sub-pixels, and the efficiency is low because only about 5% of light is finally transmitted.
on the other hand, in order to reduce power consumption, a reflective phase change display has been proposed. In reflective displays, a mirror placed under the phase change material reflects ambient light incident on the display back, effectively passing through the layer of phase change material twice, adjusting the characteristics of the reflected light by modulating the state of the phase change material. However, in weak ambient light, reflective displays are low in brightness and cannot be used. Therefore, a half-reflection half-transmission phase change display and a full-transmission phase change display technology are provided, white light emitted by the provided LED backlight source still has a wider bandwidth after passing through a phase change material, the color purity is not high, and the display effect is not good due to poor contrast.
Disclosure of Invention
aiming at the defects or improvement requirements of the prior art, the invention provides a display device based on a phase-change material, wherein filter components based on the phase-change material respectively have different transmittances under different crystallization degrees, the transmission of different wavelengths is realized through an optimized structure, the modulation of the intensity of three primary colors emitted by a backlight source is realized, the filter components provided by the invention can at least transmit visible light with a certain wavelength of more than 15%, and the utilization efficiency of a light source is greatly improved.
To achieve the above object, according to one aspect of the present invention, there is provided a phase change material-based display device, comprising a quantum dot light-emitting element, an isolation layer, and a filter element, which are sequentially disposed from bottom to top,
the quantum dot light-emitting component comprises a first wavelength light-emitting component and a quantum dot film, the quantum dot film is arranged on the first wavelength light-emitting component, and light with a first wavelength emitted by the first wavelength light-emitting component excites the quantum dot film to emit monochromatic light with a wavelength different from the first wavelength;
The isolation layer is arranged on the quantum dot film;
The filtering component comprises a conducting layer, a phase change material layer and a covering layer which are sequentially arranged from bottom to top, wherein the conducting layer is arranged on the isolating layer, the conducting layer and the covering layer are respectively used as an upper electrode and a lower electrode of the phase change material layer to be used for applying voltage on the phase change material layer to enable the phase change material layer to be mutually converted between an amorphous state and a crystalline state, and the transmission rate of the phase change material layer is changed when the phase change material layer is mutually converted between the amorphous state and the crystalline state to adjust the intensity of monochromatic light emitted by the quantum dot film, so that the color display is realized.
Preferably, the quantum dot thin films are provided in plurality, monochromatic light emitted by the first wavelength light-emitting component passes through all the quantum dot thin films so as to excite each quantum dot thin film to emit monochromatic light with a set wavelength, the monochromatic light emitted by the first wavelength light-emitting component is blue light or violet light, the monochromatic light emitted by some quantum dot thin films after excitation is red light, and the monochromatic light emitted by other quantum dot thin films after excitation is green light.
Preferably, each quantum dot thin film is formed of the same material and has a different quantum dot size, and the material of the quantum dot thin film is selected from one or more of CdSe, CdS, CdTe, ZnS, ZnSe, CuInS, ZnCuInS.
Preferably, when the phase-change material layer is converted between the crystalline state and the amorphous state, the refractive index n and the extinction coefficient k of the phase-change material layer also change.
Preferably, the material of the isolation layer may be SiO2、HfO、Al2O3、ZnO、In2O3、TiO2、Si3N4Or MgF2The thickness of the isolation layer is 100nm-1000 nm.
Preferably, the phase change material of the phase change material layer is GeTe, SbTe, BiTe, InSb, InSe, GeSb, SbSe, GaSb, GeSbTe, AgInSbTe, InSbTe or AgSbTe.
Preferably, the thickness of the phase change material layer is less than 100 nm.
According to another aspect of the present invention, there is also provided a phase-change material-based display device, comprising a quantum dot light-emitting component, an isolation layer, a refraction layer and a filter component, which are sequentially arranged from bottom to top,
the quantum dot light-emitting component comprises a first wavelength light-emitting component and a quantum dot film, the quantum dot film is arranged on the first wavelength light-emitting component, and light with a first wavelength emitted by the first wavelength light-emitting component excites the quantum dot film to emit monochromatic light with a wavelength different from the first wavelength;
The isolation layer is arranged on the quantum dot film, and the refraction layer is arranged on the isolation layer
The filtering component comprises a conducting layer, a phase change material layer and a covering layer which are sequentially arranged from bottom to top, wherein the conducting layer is arranged on the refraction layer, the conducting layer and the covering layer are respectively used as an upper electrode and a lower electrode of the phase change material layer to apply voltage on the phase change material layer, and the adjustment of the intensity of monochromatic light emitted by the quantum dot film is realized through the transmissivity change of the phase change material layer when the phase change material layer is mutually converted between an amorphous state and a crystalline state, so that the color display is realized.
preferably, the material of the refractive layer is selected from TiO2、SiO2、HfO2、Al2O3、ZnO、In2O3、SiN、MgF2One or more of (a).
According to another aspect of the present invention, there is also provided a phase change material-based display device, comprising a quantum dot light-emitting component, an isolation layer and a filter component, which are sequentially arranged from bottom to top,
The quantum dot light-emitting component comprises a first wavelength light-emitting component and a quantum dot film, the quantum dot film is arranged on the first wavelength light-emitting component, and light with a first wavelength emitted by the first wavelength light-emitting component excites the quantum dot film to emit monochromatic light with a wavelength different from the first wavelength;
the isolation layer is arranged on the quantum dot film;
The filter component comprises a phase change material layer, wherein the phase change material layer is arranged on the isolation layer, the phase change material layer is mutually converted between the amorphous state and the crystalline state by irradiating laser on the phase change material layer, and the monochromatic light intensity emitted by the quantum dot film is adjusted by the transmissivity change of the phase change material layer when the phase change material layer is mutually converted between the amorphous state and the crystalline state, so that the color display is realized.
In general, compared with the prior art, the above technical solution contemplated by the present invention can achieve the following beneficial effects:
1) The invention utilizes the advantages of high purity, wide color gamut and stable luminous performance of the quantum dot film, and utilizes the filter component to replace the traditional multilayer devices such as a polarizer, an optical filter, liquid crystal and the like, so that the transmission efficiency of the quantum dot film is greatly improved, and the transmission rate of the phase change material layer is changed when the phase change material layer is mutually converted between the amorphous state and the crystalline state, so that monochromatic light of three primary colors with required wavelength and intensity can be selected to transmit, thereby being combined to form various colors.
2) The invention gives consideration to the color saturation and brightness of the display device, and has the advantages of high color purity and strong contrast compared with a reflective phase-change display technology and a semi-reflective semi-transparent phase-change display technology.
3) The filtering component provided by the invention can at least transmit monochromatic light with a certain wavelength of more than 15%, and the utilization efficiency of the quantum dot light-emitting component is greatly improved.
Drawings
Fig. 1 and 2 are schematic structural views of display devices according to embodiments 1 and 2 of the present invention, respectively;
fig. 3, 4 and 5 are transmission spectra of RGB three primary colors respectively displayed under the quantum dot light emitting assembly in embodiment 2, wherein fig. 3 is a transmission spectrum under red quantum dots of the quantum dot film excited by a blue LED, fig. 4 is a transmission spectrum under green quantum dots of the quantum dot film excited by a blue LED, and fig. 5 is a transmission spectrum of blue light emitted by a blue LED.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1
Referring to fig. 1, a phase-change material-based display device includes a quantum dot light emitting element 1, an isolation layer 2, and a filter element 3, which are sequentially disposed from bottom to top, wherein,
The quantum dot light-emitting component 1 is used as a backlight source of a display device and comprises a first wavelength light-emitting component 1.1 and a quantum dot film, wherein the first wavelength light-emitting component 1.1 can select a blue light LED or a purple light LED, the quantum dot film is arranged on the first wavelength light-emitting component 1.1, and light with a first wavelength emitted by the first wavelength light-emitting component 1.1 excites the quantum dot film to emit monochromatic light with a wavelength different from the first wavelength;
the isolation layer 2 is arranged on the quantum dot film;
filter component 3 includes conducting layer 3.1, phase change material layer 3.2 and the overburden 3.3 that sets gradually from supreme down, conducting layer 3.1 sets up on the isolation layer 2, conducting layer 3.1 and overburden 3.3 are as phase change material layer 3.2's upper and lower electrode respectively for be used for exerting voltage on phase change material layer 3.2 and make phase change material layer 3.2 interconversion between amorphous state and crystalline state, through phase change material layer 3.2 transmissivity changes when interconversion between amorphous state and crystalline state realizes the regulation to the monochromatic light intensity that the quantum dot film sent, and then realizes the demonstration of color. Preferably, the quantum dot thin films are provided in plurality, and monochromatic light emitted by the first wavelength light emitting component 1.1 passes through all the quantum dot thin films so as to excite each quantum dot thin film to emit monochromatic light with a set wavelength, if the first wavelength light emitting component 1.1 is a blue light LED or a violet light LED, the emitted monochromatic light is blue light or violet light, some quantum dot thin films emit monochromatic light after being excited, and other quantum dot thin films emit monochromatic light after being excited, the emitted monochromatic light is green light.
Fig. 1 shows two quantum dot films, which may actually be further expanded into more quantum dot films, and these two quantum dot films may emit visible light of the second wavelength and visible light of the third wavelength respectively under excitation of the first wavelength light emitting component 1.1, and the first wavelength, the second wavelength, and the third wavelength are different from each other; for example, if the first wavelength light emitting element 1.1 is a blue LED and emits blue light, one of the quantum dot films may be a quantum dot film excited by the blue LED to emit red monochromatic light, which is denoted as a red quantum dot film 1.2, and the other quantum dot film may be a quantum dot film excited by the blue LED to emit green light, which is denoted as a green quantum dot film 1.3; the phase change material layer 3.2 can realize reversible transition between crystalline states and amorphous states of different degrees under the drive of different voltages or different power lasers, so as to adjust the transmission intensity of the first wavelength visible light emitted by the first wavelength visible light emitting component, the second wavelength visible light emitted by the red light quantum dot film 1.2, and the third wavelength visible light emitted by the green light quantum dot film 1.3.
Further, one red quantum dot film 1.2 corresponds to one red sub-pixel (R sub-pixel, excited to emit red light), one green quantum dot film 1.3 corresponds to one green sub-pixel (G sub-pixel, excited to emit green light), one area of the blue LED corresponds to one blue sub-pixel (B sub-pixel, emitting blue light), each pixel area of the display device includes a red sub-pixel, a green sub-pixel and a blue sub-pixel, and the red sub-pixel, the green sub-pixel and the blue sub-pixel can be combined to form different colors.
Further, the material of the isolation layer 2 may be SiO2、HfO、Al2O3、ZnO、In2O3、TiO2、Si3N4or MgF2The atomic percentage in the chemical formulas is adjustable; the thickness of the spacer layer 2 is preferably 100nm to 1000nm, and the more preferred thickness of the spacer layer 2 is 100 nm.
The red, green and blue light (RGB three primary colors) can modulate the intensity of transmitted light in the filter component 3 through the isolation layer 2, the phase change material layer 3.2 changes the crystallization state under the stimulation of electrical stimulation or laser, so that the transmissivity of the three primary colors light changes, if the crystallization state of the phase change material layer 3.2 is operated by applying voltage, a long voltage with medium intensity can be applied to the phase change material layer 3.2, the temperature of the phase change material layer 3.2 is increased to a temperature range which is higher than the crystallization temperature and lower than the melting temperature, and is kept for a certain time, crystal lattices are orderly arranged at this time to form a crystal state, and the transformation from an amorphous state to the crystal state is realized; or a short and strong voltage or laser pulse is applied to the phase-change material, so that the temperature of the phase-change material is raised to be higher than the melting temperature, the long-range order of the crystalline state is damaged, the falling edge of the pulse is very short, the phase-change material is rapidly cooled to be lower than the crystallization temperature, the phase-change material is fixed in the amorphous state, and the crystalline state is converted into the amorphous state. During the transition, the transmissivity of the phase change material layer 3.2 also changes, so that the intensity of the transmitted light can be adjusted. Of course, the switching mechanism is not limited to the application of current pulses to induce heating, but any other electromagnetic field induced heating is possible.
Or, laser may be irradiated on the phase change material layer 3.2 (at this time, the covering layer 3.3 and the conductive layer 3.1 may be removed from the filter component 3), so that the phase change material layer 3.2 is converted between the amorphous state and the crystalline state, and the intensity of monochromatic light emitted from the quantum dot film is adjusted by the transmittance change of the phase change material layer 3.2 when the amorphous state and the crystalline state are converted with each other, thereby displaying colors.
The phase change material layer 3.2 comprises the following chalcogenide compounds and alloys thereof, including but not limited tolimited to: GeTe, SbTe, BiTe, InSb, InSe, GeSb, SbSe, GaSb, GeSbTe, AgInSbTe, InSbTe, AgSbTe, Ag2In4Sb76Te17(AIST), the atomic percentages of each of the above formulas may vary. The phase change material may further comprise at least one dopant, including but not limited to: C. and N is added. Preferably, the phase change material may be Sb2Te3because of Sb at the same thickness2Te3The transmittance change occurring before and after the phase transition is the largest, and Sb2Te3The phase change temperature is low, the amplitude of voltage or laser required by conversion is low, the pulse width is narrow, the energy consumption of the whole display device is reduced, and the response speed of the phase change material is improved, so that the image refresh rate of the display device is improved, and a better animation display effect is shown. Preferably, the thickness of the phase-change material is less than 100nm, since the increase of the thickness of the phase-change material will reduce the transmittance of visible light, and the temperature required for crystallization of the phase-change material is higher, preferably 35nm, when the thickness is too low, even in the crystallization state, the transmittance is still high, which is not favorable for the full black display of the display device.
both the conductive layer 3.1 and the cover layer 3.3 may transmit light and should be as transparent as possible, in this embodiment the conductive layer 3.1 and the cover layer 3.3 may also act as electrodes for applying a voltage over the phase change material layer 3.2. The conductive layer 3.1 and the cover layer 3.3 should have transparent conductive properties, such as carbon nanotubes, Indium Tin Oxide (ITO) or very thin metal layers (10nm to 50nm thickness), preferably indium tin oxide. The thickness of the conductive layer 3.1 and the covering layer 3.3 are both 10nm to 100nm, the thickness of the covering layer 3.3 is preferably 20nm, and the thickness of the conductive layer 3.1 is preferably 40 nm.
The transmittance of a phase change material varies greatly when it is transformed between crystalline and amorphous states. The phase change material is stable in both states, which means that when the display is in a stable state (non-switching), either the voltage or the laser can be removed, so the power consumption of the display device is low; the phase change material also switches between the crystalline and amorphous states at a fast speed, less than 100ns, several times faster than what can be perceived by the human eye.
Example 2
In order to avoid crosstalk between pixels in the display device with different wavelengths, the structure of embodiment 1 may be optimized to enable visible light with wavelengths of RGB three primary color light to pass through the refraction layer 4 and then reach the phase change material layer 3.2, and the transmittance of the three primary color light is adjusted through optical change of the phase change material. Because independent transmission of RGB three primary color light is difficult to realize by means of interference of the phase-change material and the transparent electrode, a row of photonic crystals are formed by adding the multilayer refraction layer 4 between the filter component 3 and the isolation layer 2 to adjust emergent wavelength. The photonic crystal refers to an artificial periodic dielectric structure with Photonic Band Gap (PBG) characteristics, in which a wave in a certain frequency range cannot propagate, that is, the structure itself has a "forbidden band", and a specific embodiment is to cyclically stack materials with low absorption of incident waves with different refractive indexes.
Referring to fig. 2, which is an enhanced embodiment of embodiment 1, in embodiment 2, a material with different refractive index levels and low absorption to incident waves is added as a refraction layer 4, and the wavelength range of outgoing waves is adjusted by changing the thicknesses of a high refractive index material and a low refractive index material, which is different from embodiment 1 in that the refraction layer 4 is provided between a conductive layer 3.1 and a spacer 2 of embodiment 1 (other structures are the same).
The material of the refraction layer 4 is a material with low absorption to incident waves, and the material with low absorption to the incident waves comprises but is not limited to SiO2、HfO、Al2O3、ZnO、In2O3、TiO2、Si3N4、MgF2wherein the atomic percentage in each formula is adjustable. Preferably, the refractive layer 4 is formed by alternately stacking a high refractive index material layer and a low refractive index material layer, the high refractive index material layer being TiO2Layer of low refractive index material layer of SiO2Layer of, wherein TiO2Has a refractive index of about 2.50, SiO2Has a refractive index of about 1.45, TiO2The thickness of the layer is preferably 10nm to 200nm, SiO2The thickness of the layer is also preferably from 10nm to 200nm, the combination of the thicknesses of which depends on the central wavelength of the visible light to be transmitted,The total thickness of the refractive layer 4 differs for different colors of light.
fig. 3, 4 and 5 are transmittance of different lights in the present embodiment. Fig. 3, 4 and 5 show the transmission of the phase change material based filter component 3 in the crystalline and amorphous states in the visible range at a given thickness of the refractive layer 4. Referring to fig. 3, for red light, the center wavelength thereof is 648nm, the transmittance in an amorphous state is 32%, and the transmittance in a crystallized state is less than 8%; referring to fig. 4, for green light, the center wavelength thereof is 548nm, the transmittance in an amorphous state is 23%, and the transmittance in a crystallized state is less than 7%; referring to fig. 5, for blue light, the center wavelength is 480nm, the transmittance in an amorphous state is 19%, and the transmittance in a crystallized state is less than 7%. The intensity of the transmitted light is selected by applying different voltages or adjusting the laser power to crystallize the phase-change material layer 3.2 from amorphous to partially to fully crystallized (different degrees of crystallization). The partial crystallization can be selected from 20% crystallization, 40% crystallization, etc., and mixed phase can be obtained. Partial crystallization can be achieved simply by limiting the maximum value of the current or the laser power during the switching process. Typically between 16 and 64 mixed phases are available, and more phases, such as 1024, are available under appropriate control.
A series of pixels in fig. 2 arranged in an array are combined into a display device, wherein sub-pixels (quantum dot films) in each pixel can be individually controlled by pixel addressing, and the full-color display is finally realized by changing the transmittance of the filter assembly 3 and further adjusting different ratios of the three primary color light intensities.
it will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. a display device based on phase-change material is characterized by comprising a quantum dot light-emitting component, an isolating layer and a filtering component which are arranged in sequence from bottom to top,
The quantum dot light-emitting component comprises a first wavelength light-emitting component and a quantum dot film, the quantum dot film is arranged on the first wavelength light-emitting component, and light with a first wavelength emitted by the first wavelength light-emitting component excites the quantum dot film to emit monochromatic light with a wavelength different from the first wavelength;
The isolation layer is arranged on the quantum dot film;
the filtering component comprises a conducting layer, a phase change material layer and a covering layer which are sequentially arranged from bottom to top, wherein the conducting layer is arranged on the isolating layer, the conducting layer and the covering layer are respectively used as an upper electrode and a lower electrode of the phase change material layer to be used for applying voltage on the phase change material layer to enable the phase change material layer to be mutually converted between an amorphous state and a crystalline state, and the transmission rate of the phase change material layer is changed when the phase change material layer is mutually converted between the amorphous state and the crystalline state to adjust the intensity of monochromatic light emitted by the quantum dot film, so that color display is achieved.
2. The phase-change material-based display device as claimed in claim 1, wherein the quantum dot films are provided in plurality, and monochromatic light emitted from the first wavelength light-emitting element passes through all the quantum dot films to excite each quantum dot film to emit monochromatic light of a set wavelength, the monochromatic light emitted from the first wavelength light-emitting element is blue light or violet light, some quantum dot films emit monochromatic light after excitation as red light, and other quantum dot films emit monochromatic light after excitation as green light.
3. A phase change material based display device according to claim 2, wherein each quantum dot thin film is formed of the same material and has a different quantum dot size, the material of the quantum dot thin film being selected from one or more of CdSe, CdS, CdTe, ZnS, ZnSe, CuInS, ZnCuInS.
4. A phase change material based display device as claimed in claim 1, wherein the phase change material layer has a refractive index n and an extinction coefficient k which vary when transformed between the crystalline and amorphous states.
5. A phase change material based display device as claimed in claim 1, characterized in that the material of the spacer layer may be SiO2、HfO、Al2O3、ZnO、In2O3、TiO2、Si3N4or MgF2The thickness of the isolation layer is 100nm-1000 nm.
6. The phase change material based display device of claim 1, wherein the phase change material of the phase change material layer is GeTe, SbTe, BiTe, InSb, InSe, GeSb, SbSe, GaSb, GeSbTe, AgInSbTe, InSbTe or AgSbTe.
7. A phase change material based display device according to claim 1, wherein the phase change material layer has a thickness of less than 100 nm.
8. A display device based on phase-change material is characterized by comprising a quantum dot light-emitting component, an isolating layer, a refraction layer and a filtering component which are arranged in sequence from bottom to top,
The quantum dot light-emitting component comprises a first wavelength light-emitting component and a quantum dot film, the quantum dot film is arranged on the first wavelength light-emitting component, and light with a first wavelength emitted by the first wavelength light-emitting component excites the quantum dot film to emit monochromatic light with a wavelength different from the first wavelength;
The isolation layer is arranged on the quantum dot film, and the refraction layer is arranged on the isolation layer
The filtering component comprises a conducting layer, a phase change material layer and a covering layer which are sequentially arranged from bottom to top, wherein the conducting layer is arranged on the refraction layer, the conducting layer and the covering layer are respectively used as an upper electrode and a lower electrode of the phase change material layer to apply voltage on the phase change material layer, and the adjustment of the intensity of monochromatic light emitted by the quantum dot film is realized through the transmissivity change of the phase change material layer when the phase change material layer is mutually converted between an amorphous state and a crystalline state, so that the color display is realized.
9. A phase change material based display device according to claim 8, wherein the material of the refractive layer is selected from TiO2、SiO2、HfO2、Al2O3、ZnO、In2O3、SiN、MgF2one or more of (a).
10. A display device based on phase-change material is characterized by comprising a quantum dot light-emitting component, an isolating layer and a filtering component which are arranged in sequence from bottom to top,
the quantum dot light-emitting component comprises a first wavelength light-emitting component and a quantum dot film, the quantum dot film is arranged on the first wavelength light-emitting component, and light with a first wavelength emitted by the first wavelength light-emitting component excites the quantum dot film to emit monochromatic light with a wavelength different from the first wavelength;
the isolation layer is arranged on the quantum dot film;
The filter component comprises a phase change material layer, wherein the phase change material layer is arranged on the isolation layer, the phase change material layer is mutually converted between the amorphous state and the crystalline state by irradiating laser on the phase change material layer, and the monochromatic light intensity emitted by the quantum dot film is adjusted by the transmissivity change of the phase change material layer when the phase change material layer is mutually converted between the amorphous state and the crystalline state, so that the color display is realized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910816529.3A CN110568636A (en) | 2019-08-30 | 2019-08-30 | Display device based on phase-change material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910816529.3A CN110568636A (en) | 2019-08-30 | 2019-08-30 | Display device based on phase-change material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110568636A true CN110568636A (en) | 2019-12-13 |
Family
ID=68777062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910816529.3A Pending CN110568636A (en) | 2019-08-30 | 2019-08-30 | Display device based on phase-change material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110568636A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021096323A (en) * | 2019-12-16 | 2021-06-24 | Dic株式会社 | Color filter ink composition, light conversion layer, and color filter |
| CN113556494A (en) * | 2021-07-14 | 2021-10-26 | 北京理工大学重庆创新中心 | Image storage method based on phase change material phase structure ultrafast laser cooperative modulation |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105849626A (en) * | 2013-12-23 | 2016-08-10 | 埃西斯创新有限公司 | Display device based on phase-change materials |
| CN105938261A (en) * | 2016-06-16 | 2016-09-14 | 华中科技大学 | Display device based on phase-change material |
| CN205899180U (en) * | 2016-06-16 | 2017-01-18 | 华中科技大学 | Display device based on phase change material |
| CN107112350A (en) * | 2014-12-24 | 2017-08-29 | Lg电子株式会社 | Display device |
| EP3333618A1 (en) * | 2016-12-12 | 2018-06-13 | Bodle Technologies Limited | Transflective, pcm-based display device |
| US20190088830A1 (en) * | 2015-12-02 | 2019-03-21 | Nanosys, Inc. | Quantum Dot Based Color Conversion Layer in Display Devices |
| CN109791313A (en) * | 2016-09-23 | 2019-05-21 | 博德科技有限公司 | The display equipment based on phase-change material with resistive switch element |
-
2019
- 2019-08-30 CN CN201910816529.3A patent/CN110568636A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105849626A (en) * | 2013-12-23 | 2016-08-10 | 埃西斯创新有限公司 | Display device based on phase-change materials |
| CN107112350A (en) * | 2014-12-24 | 2017-08-29 | Lg电子株式会社 | Display device |
| US20190088830A1 (en) * | 2015-12-02 | 2019-03-21 | Nanosys, Inc. | Quantum Dot Based Color Conversion Layer in Display Devices |
| CN105938261A (en) * | 2016-06-16 | 2016-09-14 | 华中科技大学 | Display device based on phase-change material |
| CN205899180U (en) * | 2016-06-16 | 2017-01-18 | 华中科技大学 | Display device based on phase change material |
| CN109791313A (en) * | 2016-09-23 | 2019-05-21 | 博德科技有限公司 | The display equipment based on phase-change material with resistive switch element |
| EP3333618A1 (en) * | 2016-12-12 | 2018-06-13 | Bodle Technologies Limited | Transflective, pcm-based display device |
| WO2018108385A1 (en) * | 2016-12-12 | 2018-06-21 | Bodle Technologies Limited | Transflective, pcm-based display device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021096323A (en) * | 2019-12-16 | 2021-06-24 | Dic株式会社 | Color filter ink composition, light conversion layer, and color filter |
| CN113556494A (en) * | 2021-07-14 | 2021-10-26 | 北京理工大学重庆创新中心 | Image storage method based on phase change material phase structure ultrafast laser cooperative modulation |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110568692B (en) | Display device based on phase-change material and quantum dots | |
| US11573472B2 (en) | Optical device | |
| WO2017215363A1 (en) | Display device based on phase change material | |
| KR102054041B1 (en) | Display device based on phase-change materials | |
| US10825966B2 (en) | Display panel, display device and display method | |
| KR101955332B1 (en) | Plasmonic modulator and optical apparatus employing the same | |
| US11740493B2 (en) | Transflective, PCM-based display device | |
| KR20180107443A (en) | Photoluminescence device, method of manufacturing the same and display apparatus having the same | |
| KR20180114979A (en) | Display apparatus and method of manufacturing the same | |
| CN110568636A (en) | Display device based on phase-change material | |
| WO2023057760A1 (en) | Display device and projection device | |
| US20220085290A1 (en) | Display material | |
| Cui et al. | Nonvolatile Displays Based on Phase Change Materials | |
| CN117784449A (en) | Filtering structure based on phase change material | |
| CN117784450A (en) | Virtual reality display device based on phase change material | |
| CN116449629A (en) | Pixel structure and display driving method thereof | |
| CN117742010A (en) | Laser display device based on phase change material | |
| CN118056156A (en) | Display device and projection device | |
| CN117806058A (en) | Spatial light modulator based on phase change material | |
| CN115917407A (en) | Display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191213 |
|
| RJ01 | Rejection of invention patent application after publication |