CN110545028B

CN110545028B - Driver and converter

Info

Publication number: CN110545028B
Application number: CN201810533545.7A
Authority: CN
Inventors: 马龙昌; 魏海山; 朱武; 李彦涌; 谢舜蒙; 杨涛; 杨乐乐; 欧阳柳; 唐威; 田伟
Original assignee: CRRC Zhuzhou Institute Co Ltd
Current assignee: CRRC Zhuzhou Institute Co Ltd
Priority date: 2018-05-29
Filing date: 2018-05-29
Publication date: 2020-10-09
Anticipated expiration: 2038-05-29
Also published as: CN110545028A

Abstract

The invention provides a driver and a converter, which comprise a circuit board, a high voltage area and a low voltage area, wherein the circuit board is provided with a high voltage side and a low voltage side arranged adjacent to the high voltage side, the high voltage area is integrated on the high voltage side of the circuit board, the low voltage area is integrated on the low voltage side of the circuit board, and the high voltage area is in communication connection with the low voltage area. The driver and the converter provided by the invention can improve the anti-interference capability of the driver, and are simple in structure and high in reliability.

Description

Driver and converter

Technical Field

The invention relates to the technical field of energy power supply, in particular to a driver and a converter.

Background

At present, companies for designing the converter mainly include siemens, pombodi, mitsubishi and the like, products designed by the companies are developed based on discrete power semiconductor devices, pulse control, semiconductor device driving and power semiconductor devices are designed independently, and then the pulse control, the semiconductor device driving and the power semiconductor devices are installed in the converter in a unified mode.

In the prior art, a driver is often designed separately from a corresponding semiconductor power device, so that the converter is complex in design structure and low in anti-interference capability, and the operation state of the power semiconductor device is difficult to track and record in time due to the discrete design and installation mode, thereby affecting the operation reliability of the power semiconductor device.

In response to the above problems, those skilled in the art have sought solutions.

Disclosure of Invention

In view of this, the present invention provides a driver and a converter, which can improve the anti-interference capability of the driver, and have a simple structure and high reliability.

The invention provides a driver, which comprises a circuit board, a high-voltage area and a low-voltage area, wherein the circuit board is provided with a high-voltage side and a low-voltage side arranged adjacent to the high-voltage side, the high-voltage area is integrated on the high-voltage side of the circuit board, the low-voltage area is integrated on the low-voltage side of the circuit board, and the high-voltage area is in communication connection with the low-voltage area.

Further, the number of the high-voltage regions is two, wherein the two high-voltage regions are a first high-voltage region and a second high-voltage region, the structures of the first high-voltage region and the second high-voltage region are the same, the high-voltage region comprises a high-voltage side controller and an operation state monitoring circuit, and the high-voltage side controller is electrically connected with the operation state monitoring circuit.

Further, the low-voltage area comprises a sensor sampling circuit, a low-voltage side controller and a communication circuit, wherein the low-voltage side controller is electrically connected with the sensor sampling circuit and the communication circuit respectively.

Further, the low-voltage side controller comprises a cache module and a processor, and the cache module is electrically connected with the processor.

Furthermore, the sensor sampling circuit comprises a controller single-board voltage module and an A/D converter, the controller single-board voltage module is electrically connected with the A/D converter, and the A/D converter is also connected with the processor.

Further, the driver further comprises a current sensor and a temperature sensor, and the current sensor and the temperature sensor are both electrically connected with the A/D converter.

Further, the driver also comprises controller humidity sensors, and the controller humidity sensors are connected with the processor.

Furthermore, the communication circuit comprises a communication module and an IGBT pulse distribution and operation state processing module, the communication module and the IGBT pulse distribution and operation state processing module are electrically connected with the processor, and the IGBT pulse distribution and operation state processing module is also in communication connection with the high-voltage area.

The invention also provides a converter, which comprises the driver.

Further, the converter further comprises a variable current controller and an IGBT assembly, the driver is integrated inside the IGBT assembly, the low-voltage area is in communication connection with the variable current controller, and the high-voltage area is electrically connected with the IGBT assembly.

Therefore, according to the driver and the converter provided by the embodiment of the invention, the high-voltage area and the low-voltage area of the driver are integrated on the circuit board, so that the anti-interference capability of the driver is improved, the structure is simple, and the reliability is high.

In order to make the aforementioned and other objects, features and advantages of the invention comprehensible, preferred embodiments accompanied with figures are described in detail below.

Drawings

Fig. 1 and fig. 2 are block diagrams of a driver according to a first embodiment of the present invention.

Fig. 3 is a schematic diagram of the circuit topology of the low voltage region of fig. 2.

Fig. 4 is a schematic diagram of the circuit connection between the high voltage region and the low voltage region in fig. 2.

Fig. 5 is a schematic circuit topology diagram of a current transformer according to a second embodiment of the present invention.

Detailed Description

To further clarify the technical solutions and effects of the present invention adopted to achieve the intended purpose, the following detailed description is given of specific embodiments, structures, features and effects according to the present invention with reference to the accompanying drawings and preferred embodiments.

Fig. 1 and fig. 2 are block diagrams of a driver 100 according to a first embodiment of the present invention. The driver 100 provided in this embodiment is used for driving a converter, and is integrated in an Insulated Gate Bipolar Transistor (IGBT) component of the converter, and is consistent with the shape and size of the IGBT, so as to completely attach to the IGBT, as shown in fig. 1 to 2, the driver 100 provided in this embodiment at least includes a circuit board 10, a high voltage region 20, and a low voltage region 30. Specifically, in the present embodiment, the circuit board 10 is provided with a high-voltage side 12 and a low-voltage side 14 disposed adjacent to the high-voltage side 12, and specifically, the high-voltage side 12 and the low-voltage side 14 of the circuit board 10 are located on the same end surface of the circuit board 10. Specifically, in one embodiment, the high voltage region 20 is integrated on the high voltage side 12 of the circuit board 10, the low voltage region 30 is integrated on the low voltage side 14 of the circuit board 10, and the high voltage region 20 is communicatively coupled to the low voltage region 30.

Specifically, in one embodiment, the number of the high voltage regions 20 may be, but is not limited to, two, for example, in other embodiments, the number of the high voltage regions 20 is the same as the number of IGBTs of the driver 100 integrated in the corresponding IGBT component, for example, when three IGBTs are included in the IGBT component, the number of the high voltage regions 20 on the driver 100 is three. Specifically, in the present embodiment, the two high-pressure regions 20 are a first high-pressure region 22 and a second high-pressure region 24, and the first high-pressure region 22 and the second high-pressure region 24 have the same structure. Specifically, the high voltage section 20 includes a high voltage side controller 222,242 and operating condition monitoring circuits 224,244, and a high voltage side controller 222,242 electrically connected to the operating

condition monitoring circuits

224, 244. Specifically, in one embodiment, the high side controller 222,242 may be, but is not limited to, an SMD field programmable gate array for logic processing. For example, the model number of the high-voltage side controller 222,242 is a Max10 series programmable logic chip such as 10M25DAF484I7G, but is not limited thereto.

Specifically, in the present embodiment, the first high voltage region 22 includes a high voltage side controller 222 and an operation state monitoring circuit 224. The second high-voltage region 24 includes a high-voltage side controller 242 and an operation state monitoring circuit 244. Specifically, in one embodiment, the operation

status monitoring circuits

224 and 244 are configured to monitor the operation status of the power components and the converter and collect the operation status data information of the power components and the converter, so as to send the collected operation status data information to the high-side controller 222,242. The high-voltage side controller 222,242 is used for obtaining a control signal according to the processing of the running state data information, and transmitting the control signal to the IGBT component, so as to realize the fine control of the power element and the whole-course tracking record of the running state, provide effective data support for the fault processing of the converter and the health management of the power element, and further realize the intelligent management and control of the converter.

Specifically, in one embodiment, the high-side controller 222 of the first high-voltage region 22 is connected to the busbar 42 and to an IGBT in the IGBT assembly via a cable. The high-voltage side controller 242 of the second high-voltage region 24 is connected to the busbar 42 and to another IGBT in the IGBT assembly via a cable.

Specifically, in one embodiment, the low voltage region 30 includes a sensor sampling circuit 32, a low side controller 34, and a communication circuit 36. Specifically, the low-side controller 34 is electrically connected to the sensor sampling circuit 32 and the communication circuit 36, respectively.

Referring to fig. 3, fig. 3 is a circuit topology diagram of the low voltage region 30 in fig. 2. As shown in fig. 1 to fig. 3, in one embodiment, the low-side controller 34 includes a buffer module 341 and a processor 343, and the buffer module 341 is electrically connected to the processor 343. Specifically, in the present embodiment, the cache module 341 is configured to implement a large-scale data cache, so that the drive 100 can upload data information at a high speed and process the corresponding data information. The processor 343 is configured to process analog data information such as the acquired voltage, current, temperature, humidity, and the like to obtain a corresponding control signal, so as to perform pulse processing on the IGBT component, and implement a joint driving function, thereby implementing a function of multi-level protection on the IGBT component. In particular, in an embodiment, the processor 343 may be, but is not limited to, an SMD field programmable gate array for logic processing. For example, but not limited to, a Max10 series programmable logic chip such as processor 343 model 10M25DAF484I 7G.

Specifically, in one embodiment, the sensor sampling circuit 32 includes a controller board voltage module 321 and an a/D converter 323, the controller board voltage module 321 is electrically connected to the a/D converter 323, and the a/D converter 323 is further connected to the processor 343. Specifically, in this embodiment, the sensor sampling circuit 32 is configured to process analog data information collected by each sensor and transmit the processed analog data information to the processor 343, and transmit a voltage signal collected by the controller board voltage module 321 to the processor. Specifically, the a/D converter 323 is configured to perform data conversion on the analog quantity data information to obtain data quantity data information, and transmit the data quantity data information to the processor 343. Specifically, in one embodiment, the a/D converter 323 may be, but is not limited to, AD7606BSTZ for real-time processing of current and temperature information, etc., but is not limited thereto.

Specifically, in one embodiment, the driver 100 further includes a current sensor 51 and a temperature sensor 53, and both the current sensor 51 and the temperature sensor 53 are electrically connected to the a/D converter 323. Specifically, in the present embodiment, the current sensor 51 is used for acquiring a current signal when the power element and the converter are in an operating state, and transmitting the current signal to the a/D converter 323 for data conversion. The temperature sensor 53 is used for acquiring temperature information of the power element and the converter in the operating state, and transmitting the temperature information to the a/D converter 323 for data conversion. Specifically, in one embodiment, the type of the temperature sensor may be, but is not limited to, HDC1808, for example, in other embodiments, the temperature sensor may be provided in other types.

Specifically, in one embodiment, a notch 142 is formed on the lower end of the low voltage side 14 of the circuit board 10, and the sensor interface 44 is disposed on the end of the notch 142 close to the high voltage side 12. Specifically, in the present embodiment, the temperature sensor 53 is disposed in the notch 142 and is electrically connected to the a/D converter 323 via the sensor interface 44.

Specifically, in one embodiment, the drive 100 further includes controller humidity sensors 55, each controller humidity sensor 55 being coupled to the processor 343. Specifically, in the present embodiment, the controller humidity sensor 55 is used for collecting the humidity information of the controller (the low-side controller 34 or the high-side controller 222,242) and transmitting the humidity information to the processor 343.

Specifically, in one embodiment, the communication circuit 36 includes a communication module 361 and an IGBT pulse allocation and operation state processing module 363. The communication module 361 and the IGBT pulse distribution and operation state processing module 363 are both electrically connected to the processor 343, and the IGBT pulse distribution and operation state processing module 363 is also communicatively connected to the high voltage zone 20. Specifically, in this embodiment, the communication module 361 is used for implementing high-speed communication with an external controller, for example, connected to the variable current controller 60 through an optical fiber, so as to implement optical fiber communication between the driver 100 and the variable current controller 60, and implement high-speed communication. The IGBT pulse distribution and operation state processing module 363 is configured to implement high-speed communication between the internal high-voltage region 20 and the low-voltage region 30, for example, the low-voltage region 30 is connected to the high-voltage region 20 through an optical fiber, so as to implement optical fiber communication between the high-voltage region 20 and the low-voltage region 30, and implement high-speed communication. Specifically, in one embodiment, the variable flow controller 60 may be, but is not limited to, an SMD field programmable gate array for logic processing. For example, but not limited to, a Max10 series programmable logic chip model 10M25DAF484I7G for the variable current controller 60.

Specifically, in one embodiment, circuit board 10 extends outward at an end of low voltage side 14 to form a protrusion 144, and socket 46 and interface are disposed on the end of protrusion 144 away from low voltage side 14, specifically, socket 46 is used for supplying power to low voltage region 30 and is capable of connecting high voltage region 20 with a controller of low voltage region 30 to achieve external communication between high voltage region 20 and the controller of low voltage region 30. Specifically, in the present embodiment, the communication module 361 is disposed in the receptacle 46, and two optical fibers on the receptacle 46 are connected to the variable current controller 60, so as to implement high-speed communication between the driver 100 and the variable current controller 60.

Referring to fig. 4, fig. 4 is a schematic diagram illustrating a circuit connection between the high-voltage region 20 and the low-voltage region 30 in fig. 2. Fig. 4 only shows a schematic of the topological connection of the switching power supply between the first high-voltage region 22 or the second high-voltage region 24 in the high-voltage region 20 and the low-voltage region 30, and in the following embodiments, the topological connection of the switching power supply between the first high-voltage region 22 in the high-voltage region 20 and the low-voltage region 30 is taken as an example, but not limited thereto, and for example, the topological connection of the switching power supply between the second high-voltage region 24 in the high-voltage region 20 and the low-voltage region 30 can also be taken as an example. Specifically, a first end of a first inductor (not shown) of the first high-voltage region 22 is connected to the output terminal 26 to supply power to the high-voltage side controller 222 and the operation state monitoring circuit 224 of the first high-voltage region. The second end of the first inductor of the first high voltage region 22 is electrically connected to the first end of a switching element (not shown). The control end of the switching element is connected with the selling generator to receive the pulse control signal and control the first inductor to work or close. The second terminal of the switching element is grounded. In particular, a first terminal of a second inductor (not shown) of the low-voltage region 30 is connected to a first terminal of a third inductor (not shown) of the low-voltage region 30, and a second terminal of the third inductor is connected to the output terminal 38, so as to provide a stable power supply to the low-voltage region 30, in particular, the output terminal 38 of the low-voltage region 30 is also connected to a socket 46. The second terminal of the third sensor is also connected to a first terminal of a first capacitor (not shown) of the low voltage region 30, a second terminal of the first capacitor is grounded, and a second terminal of the second inductor is grounded. Specifically, in the present embodiment, the first inductor of the first high voltage region 22 and the second inductor of the low voltage region 30 together form a transformer (not shown). Specifically, in one embodiment, the switching element may be a triode, a field effect transistor, or the like.

Specifically, in one embodiment, the IGBT pulse distribution and operation state processing module 363 of the low voltage region 30 is respectively connected to the optical fiber receiving end 41 and the optical fiber transmitting end 43 of the low voltage region 30, the optical fiber receiving end 41 of the low voltage region 30 is connected to the optical fiber transmitting end 45 of the first high voltage region 22 through an optical fiber, the optical fiber transmitting end 43 of the low voltage region 30 is connected to the optical fiber receiving end 47 of the first high voltage region 22 through an optical fiber, and thus the low voltage region 30 and the optical fiber of the first high voltage region 22 are implemented, so that the pulses and data are transmitted from the low voltage side 14 to the high voltage side 12 in the forward direction and from the high voltage side 12 to the low voltage side 14 in the reverse direction, and the high-speed communication. Specifically, in one embodiment, the fiber receiving ends 41,47 may be, but are not limited to, DC-50M fiber optic receivers, for example, the fiber receiving ends 41,47 may be fiber optic receivers of model AFBR-2529Z. The

fiber launch end

43,45 may be, but is not limited to, a DC-50M fiber optic transmitter, for example, the

fiber launch end

43,45 may be a fiber optic transmitter model AFBR-1629Z.

Referring to fig. 5, fig. 5 is a schematic circuit topology diagram of a current transformer 200 according to a second embodiment of the present invention. As shown in fig. 5, the current transformer 200 provided by the present embodiment at least includes the driver 100. Specifically, please refer to the description of the embodiment corresponding to fig. 1 to 4 for the description of the specific structure of the driver 100, which is not repeated herein.

Specifically, in the present embodiment, the converter 200 further includes a variable current controller 60 and an IGBT assembly 70, the driver 100 is integrated inside the IGBT assembly 70, the low voltage region 30 is communicatively connected to the variable current controller 60, and the high voltage region 20 is electrically connected to the IGBT assembly.

Specifically, in the present embodiment, the variable current controller 60 is connected to the low voltage region 30 of the drive 100 through an optical fiber, so that high-speed communication between the drive 100 and the variable current controller 60 is realized. The first high voltage region 22 of the driver 100 is connected to the control terminal of the insulated gate bipolar transistor IGBT1 in the IGBT assembly 70 and the second high voltage region 24 of the driver 100 is connected to the control terminal of the insulated gate bipolar transistor IGBT2 in the IGBT assembly. The source of the insulated gate bipolar transistor IGBT1 in the IGBT assembly is connected to the drain of the insulated gate bipolar transistor IGBT 2. Specifically, in the converter provided by this embodiment, the driver 100 is integrated inside the power semiconductor device IGBT component 70, and the driver 100 has functions of pulse logic processing, power element driving and protection, and running state acquisition and storage, so that the conventional IGBT component 70 can be upgraded to an intelligent device, and fine control of the power semiconductor device and full-range tracking and recording of the running state can be realized.

According to the driver 100 and the converter provided by the embodiment of the invention, the high-voltage area and the low-voltage area of the driver are integrated on the circuit board, so that the anti-interference capability of the driver is improved, the structure is simple, and the reliability is high. And an operating state monitoring circuit is arranged in the high-voltage area, so that the driver can monitor the operating states of the power element and the converter, and data support is provided for fault processing and health management of the power element.

Although the present invention has been described with reference to the preferred embodiments, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims

1. A driver, comprising a circuit board having a high voltage side and a low voltage side disposed adjacent to the high voltage side, a high voltage region integrated on the high voltage side of the circuit board, and a low voltage region integrated on the low voltage side of the circuit board, the high voltage region communicatively coupled to the low voltage region;

the high-voltage area comprises a high-voltage side controller and an operating state monitoring circuit, and the high-voltage side controller is electrically connected with the operating state monitoring circuit; wherein,

the running state monitoring circuit is used for monitoring the running states of the power element and the converter, collecting the running state data information of the power element and the converter and sending the collected running state data information to the high-voltage side controller;

and the high-voltage side controller is used for processing the running state data information to obtain a control signal and transmitting the control signal to the IGBT assembly.

2. The drive of claim 1, wherein the number of high voltage regions is two, wherein the two high voltage regions are a first high voltage region and a second high voltage region, and the first high voltage region and the second high voltage region are identical in structure.

3. The driver of claim 1, wherein the low voltage region includes a sensor sampling circuit, a low side controller, and a communication circuit, the low side controller being electrically connected to the sensor sampling circuit and the communication circuit, respectively.

4. The driver of claim 3, wherein the low side controller comprises a cache module and a processor, the cache module electrically connected to the processor.

5. The driver of claim 4, wherein the sensor sampling circuit comprises a controller single board voltage module and an A/D converter, the controller single board voltage module being electrically connected to the A/D converter, the A/D converter being further connected to the processor.

6. The driver of claim 5, further comprising a current sensor and a temperature sensor, both electrically connected to the A/D converter.

7. The actuator of claim 4, further comprising controller humidity sensors, each connected to the processor.

8. The driver of claim 4, wherein the communication circuit comprises a communication module and an IGBT pulse distribution and operation status processing module, the communication module and the IGBT pulse distribution and operation status processing module are electrically connected to the processor, and the IGBT pulse distribution and operation status processing module is further communicatively connected to the high voltage region.

9. A power converter, characterized in that it comprises a driver according to any of claims 1 to 8.

10. The power converter of claim 9, further comprising a converter controller and an IGBT assembly, wherein the driver is integrated within the IGBT assembly, wherein the low voltage region is communicatively coupled to the converter controller, and wherein the high voltage region is electrically coupled to the IGBT assembly.