CN110542476A - Ultrasonic module, preparation method thereof and ultrasonic sensor - Google Patents
Ultrasonic module, preparation method thereof and ultrasonic sensor Download PDFInfo
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- CN110542476A CN110542476A CN201910904746.8A CN201910904746A CN110542476A CN 110542476 A CN110542476 A CN 110542476A CN 201910904746 A CN201910904746 A CN 201910904746A CN 110542476 A CN110542476 A CN 110542476A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 230000005284 excitation Effects 0.000 claims abstract description 146
- 239000010409 thin film Substances 0.000 claims abstract description 130
- 239000010408 film Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- 238000002604 ultrasonography Methods 0.000 claims description 2
- 230000009286 beneficial effect Effects 0.000 abstract description 5
- 230000008859 change Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 258
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000002033 PVDF binder Substances 0.000 description 8
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 3
- 238000012216 screening Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- ZGEYCCHDTIDZAE-BYPYZUCNSA-N L-glutamic acid 5-methyl ester Chemical compound COC(=O)CC[C@H](N)C(O)=O ZGEYCCHDTIDZAE-BYPYZUCNSA-N 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 229920000131 polyvinylidene Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
- G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
- G01H11/08—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means using piezoelectric devices
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Abstract
The invention provides an ultrasonic module and a preparation method thereof, and the ultrasonic module prepared by the ultrasonic module preparation method can change the mode that an excitation layer needs to be firstly electrically connected with a wire and then connected to a PIN through the wire in the prior art, so that the contact resistance generated by electrical switching can be reduced, and the ultrasonic emission efficiency can be improved. Furthermore, by separating the Tx PIN from the Rx PIN and respectively adopting different electric connection modes, the connection strength between the PIN on the electric connection piece and the PIN on the thin film transistor layer can be enhanced, so that the problems of easy occurrence of fracture and the like under the condition that the thickness of the piezoelectric thin film layer is larger can be avoided. The ultrasonic sensor with the ultrasonic module also has the beneficial effects of low contact resistance and higher connection strength.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the field of ultrasonic sensing, in particular to an ultrasonic module, a preparation method thereof and an ultrasonic sensor.
[ background of the invention ]
the existing ultrasonic sensor can be widely applied to a plurality of fields such as mobile terminals, smart homes, crime fighting and the like. Brings great convenience and safety to the life of people. The existing ultrasonic sensor includes a Thin Film Transistor (TFT) layer, as shown in fig. 1, a pin 910 for electrical connection is disposed on the Thin Film Transistor layer 91, and the pin 910 is connected to a pin 961 corresponding to a Flexible Circuit board 96 (FPC) through a conductive structure 95, so as to achieve electrical connection. In order to realize the functions of the ultrasonic sensor, an ITO conductive structure 92 and a piezoelectric film layer 93 are further formed on the thin film transistor layer 91, an excitation layer 94 is arranged on one side, away from the thin film transistor layer 91, of the piezoelectric film layer 93, the excitation layer 94 covers the piezoelectric film layer 93 and is electrically connected with the ITO conductive structure 92, the ITO conductive structure 92 is connected to a pin foot 910 through an internal routing of the thin film transistor 91, and the pin foot 910 is connected to the flexible circuit board 96 through the conductive structure 95.
Due to the existence of various electric connection conversion structures, the conventional connection method forms a plurality of contact surfaces, so that the contact resistance is large, and the contact resistance of the conventional connection method is 15 ohms or even more than 20 ohms.
[ summary of the invention ]
In order to solve the problem that the contact resistance of the conventional ultrasonic sensor is large, the invention provides an ultrasonic module, a preparation method thereof and an ultrasonic sensor.
The present invention provides a method for manufacturing an ultrasonic module, which comprises: tx PIN, Rx PIN and piezoelectric film layer formed on a thin film transistor layer respectively; forming an excitation layer to cover one surface of the piezoelectric thin film layer far away from the thin film transistor layer and at least partially cover one surface of the Tx PIN far away from the thin film transistor layer; and providing an electrical connector which is electrically connected with the Rx PIN of the excitation layer and the Rx PIN of the thin film transistor layer respectively.
Preferably, the electrical connection element electrically connected to the excitation layer specifically includes: fully covering the Tx PIN with the excitation layer and making an electrical connection, further electrically connecting the electrical connection to the excitation layer.
Preferably, the electrical connection element electrically connected to the excitation layer specifically includes: covering the excitation layer part on the Tx PIN, wherein the Tx PIN can be divided into an exposed part and a covered part, the exposed part is electrically connected with the electric connecting piece through a conductive structure, and the covered part is directly and electrically connected with the excitation layer, so that the electric connecting piece is indirectly and electrically connected with the excitation layer.
The invention also provides an ultrasonic module for solving the technical problems, which comprises a thin film transistor layer, a piezoelectric thin film layer arranged on the thin film transistor layer, at least one Tx PIN and a plurality of Rx PINs, wherein the thin film layer is formed by a plurality of thin film transistors; the ultrasonic module further comprises an excitation layer and an electric connector, wherein the excitation layer covers one surface of the piezoelectric thin film layer, which is far away from the thin film transistor layer, and the excitation layer at least partially covers one surface of the Tx PIN, which is far away from the thin film transistor layer; the electric connecting pieces are respectively and electrically connected to the Rx PIN of the excitation layer and the Rx PIN of the thin film transistor layer.
Preferably, the excitation layer comprises a first excitation layer covering the thin-film transistor layer and a second excitation layer at least partially covering the Tx PIN, and the first excitation layer is thicker than the second excitation layer.
Preferably, the number of Tx PINs is one or more, and the number of Rx PINs is more.
preferably, the excitation layer covers the Tx PIN completely and realizes electrical connection, and a conductive structure is disposed between the electrical connection member and the excitation layer to electrically connect the electrical connection member and the excitation layer.
Preferably, the excitation layer partially covers the Tx PIN and realizes electrical connection, the Tx PIN of the thin film transistor layer includes an exposed portion and a covered portion, the exposed portion is electrically connected with the electrical connector through a conductive structure, and the covered portion is directly electrically connected with the excitation layer, so that the electrical connector is indirectly electrically connected with the excitation layer.
Preferably, the electric connector comprises a plurality of PINs, and a conductive structure is arranged between the PIN and the Rx PIN of the thin film transistor layer so as to enable the PIN to be electrically connected with the Rx PIN.
The present invention further provides an ultrasonic sensor including the ultrasonic module described above for solving the above technical problems.
Compared with the prior art, the ultrasonic module, the preparation method thereof and the ultrasonic sensor provided by the invention have the following beneficial effects:
The ultrasonic module preparation method provided by the invention can change the mode that the excitation layer needs to be electrically connected with the wiring arranged in the thin film transistor layer firstly and then connected to the PIN through the wiring in the prior art, thereby reducing the contact resistance generated by electric switching and improving the ultrasonic emission efficiency. The preparation method of the ultrasonic module provided by the invention can reduce the contact resistance to be below 2 ohms, even lower than 1 ohm. Furthermore, in the invention, by separating the Tx PIN from the Rx PIN and respectively adopting different electrical connection modes, the connection strength between the PIN on the electrical connection member and the PIN on the thin film transistor layer can be enhanced, so that the problems of easy occurrence of fracture and the like under the condition of larger thickness of the piezoelectric thin film layer can be avoided.
In the ultrasonic module manufacturing method, the excitation layer may cover the Tx PIN fully or partially and realize electrical connection. When the excitation layer covers the Tx PIN completely, the Tx PIN has no exposed part, and the electrical connector can be electrically connected to the excitation layer directly, and since the heights of the excitation layer and the Rx PIN exposed out of the thin film transistor layer are not consistent, in this case, the electrical connector can be divided into two times of binding (binding) on the corresponding excitation layer and Rx PIN.
when the excitation layer is partially covered on the Tx PIN, the exposed part of the Tx PIN is electrically connected with the electric connecting piece through a conductive structure, and the covered part of the Tx PIN is electrically connected with the excitation layer, so that the electric connecting piece is indirectly electrically connected with the excitation layer. In this case, the electronic connection may be bound on the corresponding excitation layer and the Rx PIN at one time. Based on the two setting modes, the requirements of multiple uses can be met, and therefore the application scenes of the ultrasonic wave module can be widened.
The invention also provides an ultrasonic module, which comprises a piezoelectric film layer, an excitation layer, a thin film transistor layer, a piezoelectric layer and a thin film transistor layer, wherein the excitation layer covers one surface of the piezoelectric film layer, which is far away from the thin film transistor layer, and at least part of the excitation layer covers one surface of the Tx PIN, which is far away from the thin film transistor layer; the electric connecting pieces are respectively and electrically connected to the Rx PIN of the excitation layer and the Rx PIN of the thin film transistor layer. The mode that the excitation layer needs to be electrically connected with the wiring firstly and then connected to the PIN through the wiring in the prior art can be changed, so that the contact resistance generated by electrical switching can be reduced, and the ultrasonic emission efficiency can be improved. The ultrasonic module provided by the invention can reduce the contact resistance to be below 2 ohms, even lower than 1 ohm. Furthermore, by separating the Tx PIN from the Rx PIN and respectively adopting different electric connection modes, the connection strength between the PIN on the electric connection piece and the PIN on the thin film transistor layer can be enhanced, so that the problems of easy occurrence of fracture and the like under the condition that the thickness of the piezoelectric thin film layer is larger can be avoided.
In the ultrasonic module, the excitation layer is divided into the first excitation layer and the second excitation layer with different thicknesses, so that the relation between the excitation layer and the piezoelectric thin film layer and the relation between the excitation layer and the Rx PIN can be realized, and the connection stability can be further improved.
In the ultrasonic module, the excitation layer may cover the Tx PIN entirely or partially and realize electrical connection. When the excitation layer completely covers the Tx PIN, the Tx PIN has no exposed part, the electric connecting piece can be directly contacted and electrically connected to the excitation layer, and the heights of the excitation layer and the Rx PIN exposed out of the thin film transistor layer are not consistent, so that in this case, the electric connecting piece can be bound on the corresponding excitation layer and the Rx PIN in two times.
When the excitation layer is partially covered on the Tx PIN, the exposed part of the Tx PIN is electrically connected with the electric connecting piece through a conductive structure, and the covered part of the Tx PIN is directly contacted and electrically connected with the excitation layer, so that the electric connecting piece is indirectly electrically connected with the excitation layer. In this case, the electronic connection may be bound on the corresponding excitation layer and the Rx PIN at one time. Based on the two setting modes, the requirements of multiple uses can be met, and therefore the application scenes of the ultrasonic wave module can be widened.
The invention also provides an ultrasonic sensor which comprises the ultrasonic module, so that the ultrasonic sensor also has the corresponding beneficial effects of the ultrasonic module.
[ description of the drawings ]
FIG. 1 is a schematic cross-sectional view of an ultrasonic module in the prior art.
Fig. 2 is a schematic flow chart illustrating a process of manufacturing an ultrasonic module according to a first embodiment of the present invention.
Fig. 3 is one of the schematic structural diagrams corresponding to step S1 in the ultrasonic module manufacturing method in fig. 2.
Fig. 4 is a second schematic structural diagram corresponding to step S1 in the ultrasonic module manufacturing method in fig. 2.
Fig. 5 is a schematic structural diagram corresponding to step S2 in the ultrasonic module manufacturing method in fig. 2.
Fig. 6 is one of the schematic structural diagrams corresponding to step S3 in the ultrasonic module manufacturing method in fig. 2.
Fig. 7 is a second schematic structural diagram corresponding to step S3 in the ultrasonic module manufacturing method in fig. 2.
Fig. 8 is a schematic sectional view taken along line i-i in fig. 7.
Fig. 9 is a schematic sectional view taken along the direction ii-ii shown in fig. 7.
Fig. 10 is a flowchart illustrating a method for manufacturing an ultrasonic module according to a second embodiment of the present invention.
Fig. 11 is a schematic structural view corresponding to step S2 in the ultrasonic module manufacturing method shown in fig. 10.
Fig. 12 is one of the schematic structural diagrams corresponding to step S3 in the ultrasonic module manufacturing method in fig. 10.
Fig. 13 is a second schematic structural diagram corresponding to step S3 in the ultrasonic module manufacturing method shown in fig. 10.
Fig. 14 is a schematic sectional view in the iii-iii direction shown in fig. 13.
FIG. 15 is a schematic cross-sectional view taken along line IV-IV shown in FIG. 13.
Fig. 16 is a schematic structural view illustrating an electrical connection member in an ultrasonic module according to a third embodiment of the present invention in a separated state.
FIG. 17 is a schematic view of the electrical connector of the ultrasound module of FIG. 16 in an assembled state.
Fig. 18 is a schematic sectional view taken along the direction v-v shown in fig. 13.
Fig. 19 is a schematic sectional view taken along vi-vi in fig. 13.
Fig. 20 is a schematic structural view of an ultrasonic module according to a fourth embodiment of the present invention, in which the electrical connection members are separated.
FIG. 21 is a schematic view of the ultrasonic module of FIG. 20 with the electrical connector in an assembled state.
FIG. 22 is a schematic view in section along the VII-VII direction shown in FIG. 21.
The attached drawings indicate the following:
91. A thin film transistor layer; 92. an ITO conductive structure; 93. a piezoelectric thin film layer; 94. an excitation layer; 910. a pin; 95. a conductive structure; 96. a flexible circuit board;
11. A thin film transistor layer; 110. a PIN PIN; 111. a Tx PIN; 112. rx PIN; 13. a piezoelectric thin film layer; 14. an excitation layer; 15. a conductive structure; 16. an electrical connection; 161. PIN;
21. a thin film transistor layer; 211. a Tx PIN; 2111. an exposed portion; 2112. a covering portion; 212. rx PIN; 23. a piezoelectric thin film layer; 24. an excitation layer; 25. a conductive structure; 26. an electrical connection; 261. PIN;
30. An ultrasonic module; 31. a thin film transistor layer; 311. a Tx PIN; 312. rx PIN; 33. a piezoelectric thin film layer; 34. an excitation layer; 341. a first excitation layer; 342. a second excitation layer; 35. a conductive structure; 36. an electrical connection; 361. PIN;
41. A thin film transistor layer; 411. a Tx PIN; 4111. an exposed portion; 4112. a covering portion; 412. rx PIN; 43. a piezoelectric thin film layer; 44. an excitation layer; 441. a first excitation layer; 442. a second excitation layer; 45. a conductive structure; 46. an electrical connection; 461. PIN;
[ detailed description ] embodiments
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 2, a first embodiment of the present invention provides an ultrasonic module preparation method S10, which includes the following steps:
Step S1, forming Tx PIN, Rx PIN and piezoelectric film layer on a thin film transistor layer;
step S2, forming an excitation layer to cover one surface of the piezoelectric thin film layer far away from the thin film transistor layer and one surface of the Tx PIN far away from the thin film transistor layer; and
Step S3, providing an electrical connector and electrically connecting the electrical connector to the excitation layer and the thin film transistor layer on the Rx PIN.
Wherein, the electric connector is used for being connected with an external circuit.
Referring to fig. 3, a thin film transistor layer 11 is provided, where the thin film transistor layer 11 includes a plurality of thin film transistors (not shown), and the plurality of thin film transistors are generally distributed in an array, that is, corresponding to a plurality of pixels, for respectively sensing electrical signals at various positions.
a PIN pad 110 is formed on the thin-film transistor layer 11. Further, the thin-film transistor layer 11 may be divided into three regions, wherein two regions correspond to Tx PIN 111 and Rx PIN 112, which may be separately disposed.
As shown in fig. 4, a piezoelectric thin film layer 13 is formed in a third region of the thin film transistor layer 11. As shown in the figure, the piezoelectric thin film layer 13, the Tx PIN 111 and the Rx PIN 112 are independently disposed on the surface of the thin film transistor layer 11. The number of the Tx PINs 111 may be one or more, and the number of the Rx PINs 112 may be more.
When the number of the Tx PINs 111 or the Rx PINs 112 is plural, the Tx PINs 111 or the Rx PINs may be arranged in a row or may be arranged in a distributed manner, and the number may be specifically adjusted based on the actual number to be arranged and the distribution requirement of the whole structure.
The piezoelectric thin film layer 13 mentioned here and below is an in-situ polarized piezoelectric film, that is, the piezoelectric thin film layer 13 is formed by polarization in an in-situ polarization manner. Specifically, the material of the piezoelectric thin film layer 13 can be selected from, but is not limited to: polyvinylidene fluoride, polyvinyl chloride, poly-gamma-methyl-L-glutamate, polycarbonate and polyvinylidene fluoride copolymer or a combination of a plurality of the polyvinylidene fluoride, the polyvinyl chloride, the poly-gamma-methyl-L-glutamate, the polycarbonate and the polyvinylidene fluoride copolymer.
In the prior art, the piezoelectric thin film layer 13 is usually polarized by purchasing the existing product and adhering the product on the substrate through an adhesive layer, and the thickness of the piezoelectric thin film layer 13 formed by this method is usually more than 30 μm.
In some embodiments of the present invention, the material of the piezoelectric thin film layer 13 may further select a polyvinylidene fluoride copolymer as polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE) copolymer, and in order to obtain the piezoelectric thin film layer 13 with better piezoelectric effect, the mass ratio of the polyvinylidene fluoride to the trifluoroethylene is (60-95): (5-30), preferably, the mass ratio is (75-86): (15-25), further preferably, the mass ratio is 80: 20, compared with the polyvinylidene fluoride selected independently, the polyvinylidene fluoride and trifluoroethylene copolymer can reduce the cost and has better piezoelectric effect.
In an actual manufacturing process, the piezoelectric thin film layer 13 may also be formed on the thin film transistor layer 11 by using chemical vapor deposition, physical vapor deposition, plasma sputtering, coating, or the like. At this time, the thickness of the piezoelectric thin film layer 13 is less than 30 μm, and may be further less than 9 μm, and may be further 1.5 μm to 7.4 μm, 1.9 μm to 7.2 μm, 2.2 μm to 8.6 μm, 2.8 μm to 8.4 μm, or 3.6 μm to 6.6 μm, and may be further specifically 1.8 μm, 2.4 μm, 2.6 μm, 3.7 μm, 3.9 μm, 4.2 μm, 4.6 μm, 5.6 μm, 5.8 μm, 6.7 μm, 8.6 μm, 8.7 μm.
Further in step S2, as shown in fig. 5, an excitation layer 14 is formed to cover the side of the piezoelectric thin film layer 13 away from the thin film transistor layer 11, and further, the excitation layer fully covers the Tx PIN 111, which further electrically connects the electrical connector 16 to the excitation layer 14. The excitation layer 14 may be formed by silk-screening or sputtering. The excitation layer 14 may comprise, for example, a silver layer.
Further, before performing step S3, forming conductive structures 15 on a side of the active layer 14 away from the thin-film transistor layer 11 and a side of the Rx PIN 112 away from the thin-film transistor layer 11, where a specific distribution manner of the conductive structures 15 may be determined based on requirements of an actual connection structure, and is not limited herein. The Conductive structure 15 includes, but is not limited to, a Conductive Adhesive, a Conductive medium, and the like, wherein, taking the Conductive Adhesive as an example, the Conductive Adhesive may specifically include ACF (Anisotropic Conductive Film), ACA (Anisotropic Conductive Adhesive), ICAs (Isotropic Conductive Adhesive). The conductive paste may include a resin matrix, conductive particles, and dispersion additives, auxiliaries, and the like, distinguished from the composition of the conductive paste.
as shown in fig. 6, in combination with step S3, an electrical connector 16 having PIN 161 is provided, wherein the PIN 161 on the electrical connector 16 is specifically arranged in the same manner as the corresponding Tx PIN and Rx PIN in the thin-film transistor layer 11.
As shown in fig. 7, the electrical connection members 16 are moved above the thin-film transistor layer 11, so that the electrical connection members 16 are electrically connected to the devices disposed above the thin-film transistor layer 11. In the present embodiment, the electrical connector 16 may include a Flexible Circuit Board (FPC), a PCB (Printed Circuit Board), or a direct connection through a lead (wire).
when the electrical connector 16 is a flexible circuit board or a PCB, a plurality of PINs 161 are disposed on the electrical connector 16, which correspond to the Tx PIN 111 or the Rx PIN 112, respectively. As shown in the figure, the PINs 161 on the electrical connector 16 are moved to connect with the corresponding conductive structures 15 on the Tx PIN 111 or Rx PIN 112 to achieve electrical conduction.
As the Tx PIN 111 is covered with the active layer 14 as shown in fig. 7, the PIN 161 on the electrical connection piece 16 can be directly connected to the active layer 14 through the conductive structure 15 (as shown in fig. 8), and further, the PIN 161 on the electrical connection piece 16 can be directly connected to the Rx PIN 112 of the thin film transistor layer 11 through the conductive structure 15 (as shown in fig. 9).
In the above process, binding (binding) needs to be performed in two steps:
Firstly, binding the PIN 161 on the electric connector 16 on the excitation layer 14;
In a second step, the PIN 161 on the electrical connector 16 is bonded to the Rx PIN 112 of the thin-film transistor layer 11.
When the electrical connection 16 is made up of a plurality of wires, the wires may be directly electrically connected to the Rx PIN 112 or the active layer 14.
Referring to fig. 10, a second embodiment of the present invention provides another ultrasonic module preparation method P10, which includes the following steps:
Step P1, forming Tx PIN, Rx PIN and piezoelectric film layer on a thin film transistor layer;
Step P2, forming an excitation layer to cover one surface of the piezoelectric thin film layer far away from the thin film transistor layer and partially cover one surface of the Tx PIN far away from the thin film transistor layer; and
Step P3, providing an electrical connection having Tx PIN and Rx PIN, and electrically connecting the electrical connection to the thin-film transistor layer above Tx PIN and Rx PIN.
The ultrasonic module preparation method P10 is different from the ultrasonic module preparation method S10 in that:
As shown in fig. 11, excitation layer 24 disposed on thin-film-transistor layer 21 partially covers Tx PIN 211 of thin-film-transistor layer 21 to expose Rx PIN 212 disposed on thin-film-transistor layer 21. The Tx PIN 211 can be divided into an exposed portion 2111 and a covered portion 2112, the exposed portion 2111 and the electrical connector 26 are electrically connected through a conductive structure 25, and the covered portion 2112 is directly contacted with the excitation layer 24 to achieve electrical connection, so that the electrical connector 26 and the excitation layer 24 are indirectly electrically connected.
Further, as shown in fig. 12, the conductive structure 15 is disposed on the Tx PIN 211 and the Rx PIN 212 for connecting the Tx PIN 211, the Rx PIN 212 to the PIN 261 of the electrical connector 26.
It is understood that, in the present embodiment, the number of Tx PINs 211 may be one or more, and the number of Rx PINs 212 may be more.
as shown in fig. 13, a plurality of PINs 261 disposed on the electrical connections 26 may correspond to the Tx PINs 211 or the Rx PINs 212, respectively, when the electrical connections 26 are partially stacked on top of the thin-film-transistor layer 21. As shown in the figure, the PINs 261 on the electrical connection members 26 are moved to be connected with the corresponding conductive structures 15 on the Tx PIN 211 or the Rx PIN 212 to achieve electrical conduction.
since the Tx PIN 211 is partially covered with the excitation layer and partially exposed as described in fig. 13, the outer portion may be provided with the conductive structure 25. PIN 261 on electrical connection 26 is connected directly to Tx PIN 211 via conductive structure 25 (as shown in fig. 14), and further PIN 261 on electrical connection 26 is connected directly to Rx PIN 212 of thin-film-transistor layer 21 (as shown in fig. 15).
in the above process, the electrical connection may be completed by one-time bonding, that is, the PIN 261 on the electrical connector 26 may be bonded on the Tx PIN 211 and the Rx PIN 212 corresponding to the thin film transistor layer 21.
Referring to fig. 16, a third embodiment of the present invention provides an ultrasonic module 30, wherein the ultrasonic module 30 is prepared based on the ultrasonic module preparation method S10 provided in the first embodiment, the ultrasonic module 30 includes a thin film transistor layer 31, and the thin film transistor layer 31 is correspondingly provided with a Tx PIN 311 and a plurality of Rx PINs 312. Here, as shown in fig. 16, the Tx PIN 311 is a large-sized PIN structure, so that contact resistance can be further reduced.
Further, the ultrasonic module 3 further includes an excitation layer 34 and an electrical connector 36 connected to an external circuit, the excitation layer 34 covers a surface of the piezoelectric film layer 33 away from the thin film transistor layer 31, and the excitation layer 34 at least partially covers a surface of the Tx PIN 311 away from the thin film transistor layer 31; it is understood that, here, the excitation layer 34 is in direct contact with and electrically connected to the side of the piezoelectric thin film layer 33 away from the thin film transistor layer 31, and the excitation layer 34 is at least partially in direct contact with and electrically connected to the side of the Tx PIN 311 away from the thin film transistor layer 31. The electrical connections 36 are electrically connected to the Rx PIN 312 of the active layer 34 and the thin-film transistor layer 31, respectively.
Wherein the number of the Tx PINs 311 is one or more, and the number of the Rx PINs 312 is more. The thin film transistor layer 31 further includes a piezoelectric thin film layer 33, and an excitation layer 34 is further disposed on the piezoelectric thin film layer 33. Referring to fig. 16 and 17, the excitation layer 34 may include a first excitation layer 341 and a second excitation layer 342, wherein the first excitation layer 341 covers the piezoelectric thin film layer 33. The second excitation layer 342 may at least partially overlie the Tx PIN 311. It is understood that the second excitation layer 342 completely covers the Tx PIN 311, or the second excitation layer 342 partially covers the Tx PIN 311, so that a portion of the Tx PIN 311 is exposed. In this embodiment, as shown in fig. 16, the second excitation layer 342 completely covers the Tx PIN 311.
As shown in the figure, the first excitation layer 341 is in direct contact with and electrically connected to the piezoelectric thin film layer 33, and the second excitation layer 342 is in direct contact with and electrically connected to the Tx PIN 311.
Specifically, the first excitation layer 341 may be formed on the piezoelectric thin film layer 33 by silk-screening or sputtering, and the second excitation layer 342 may also be formed by silk-screening or sputtering. The first excitation layer 341 and the second excitation layer 342 may be integrally formed, or may be formed in different regions by providing a mask (mask) and then integrally joined together.
In the present invention, the first excitation layer 341 has a thickness greater than that of the second excitation layer 342. The thickness of the first excitation layer 341 is greater than 9 μm, and may be, for example, 9 μm to 18 μm, 10 μm to 20 μm, 19 μm to 35 μm, or the like, and specifically may be 15 μm, 18 μm, 24 μm, 26 μm, 37 μm, 39 μm, or the like. The thickness is selected to satisfy the requirement of electrical connection between the first excitation light 341 and the piezoelectric thin film layer 33, so that the ultrasonic module 30 can obtain an optimal working state.
The thickness of the second excitation layer 342 is 10 μm or less, and may be, for example, 2 μm to 8 μm, 4 μm to 8 μm, 5 μm to 9 μm, or the like, and specifically may be 1 μm, 3 μm, 5 μm, 7 μm, or 8 μm, or the like. The above definition of the thickness of the second active layer 342 can ensure the convenience of the bonding between the second active layer 342 and the electrical connector 36 before the electrical conductivity is satisfied. When the thickness of the second active layer 342 is less than 8 μm, the electrical connection member 36 can be electrically connected by one bonding.
Specifically, as shown in fig. 18, the first excitation layer 341 is directly disposed on the Tx PIN 311, so that the contact area between the first excitation layer 341 and the Tx PIN 311 can be increased.
The electrical connector includes a plurality of PINs 361, and in order to make the side of the second active layer 342 away from the thin-film transistor layer 31 more stable in connection with the PINs 361 disposed on the electrical connector 36, a conductive structure 35 may be formed on the second active layer 342. The conductive structure 35 can electrically connect the second excitation layer 342 and the PIN 361, so that the ultrasonic module 3 can be electrically conducted and normally operated.
The definition of the conductive structure 35 is the same as that of the conductive structure 15 in the first embodiment, and is not repeated here.
As further shown in fig. 19, PIN 361 on the electrical connection 36 is also electrically connected to Rx PIN 312 via the conductive structure 35. The conductive structure arranged between the PIN 361 and the Rx PIN 312 comprises anisotropic conductive adhesive.
Referring to fig. 20-22, a fourth embodiment of the present invention provides an ultrasonic module 40, wherein the ultrasonic module 30 is prepared based on the ultrasonic sensing preparation method P10 provided in the second embodiment. The ultrasonic module 40 also includes an excitation layer 44, and the excitation layer 44 further includes a first excitation layer 441 and a second excitation layer 442. The ultrasonic module 40 is different from the ultrasonic module 30 provided in the third embodiment in that: the second active layer 442 partially covers the Tx PIN 411 and is electrically connected to the Tx PIN 411, such that a portion of the Tx PIN 411 is exposed.
specifically, the Tx PIN 411 of the thin film transistor layer 41 may further include an exposed portion 4111 and a covered portion 4112, as shown in fig. 20 and fig. 22, a conductive structure 45 may be disposed on the exposed portion 4111, the exposed portion 4111 and the electrical connector 46 are electrically connected through the conductive structure 45, the covered portion 4112 and the excitation layer 44 are electrically connected directly, and since the exposed portion 4111 and the covered portion 4112 are integrally disposed, the electrical connector 46 and the excitation layer 44 may be electrically connected indirectly, and the contact resistance of the electrical connector may be reduced.
As shown in fig. 22, the first excitation layer 441 and the second excitation layer 442 are integrally disposed, a portion of the second excitation layer 442 contacts the Tx PIN 411, and the exposed portion 4111 of the Tx PIN 411 is further connected to the PIN 461 of the electrical connector 46 through the conductive structure 45.
it should be noted that the descriptions related to the thin film transistor layer, the excitation layer, the conductive structure, the PIN and the electrical connection member in the first embodiment and the second embodiment are also applicable to the ultrasonic module 30 provided in the third embodiment and the ultrasonic module 40 provided in the fourth embodiment.
A fifth embodiment of the present invention provides an ultrasonic sensor, which includes any one of the ultrasonic modules and a driving module, wherein the driving module provides driving energy for the ultrasonic module. The ultrasonic sensor can be used for sending out corresponding ultrasonic signals and can be used in the fields of fingerprint identification, security monitoring, game control, medical detection, distance detection and the like.
The ultrasonic sensor provided by the invention has the characteristics of small contact resistance, stable connection and the like.
Compared with the prior art, the ultrasonic module, the preparation method thereof and the ultrasonic sensor provided by the invention have the following beneficial effects:
the ultrasonic module preparation method provided by the invention can change the mode that the excitation layer needs to be electrically connected with the wires firstly and then connected to the PIN through the wires in the prior art, thereby reducing the contact resistance generated by electric switching and improving the ultrasonic emission efficiency. The preparation method of the ultrasonic module provided by the invention can reduce the contact resistance to be below 2 ohms, even to be lower than 1 ohm. Furthermore, by separating the Tx PIN from the Rx PIN and respectively adopting different electric connection modes, the connection strength between the PIN on the electric connection piece and the PIN on the thin film transistor layer can be enhanced, so that the problems of easy occurrence of fracture and the like under the condition that the thickness of the piezoelectric thin film layer is larger can be avoided.
The invention also provides an ultrasonic module, which comprises a piezoelectric film layer, an excitation layer, a thin film transistor layer, a piezoelectric layer and a thin film transistor layer, wherein the excitation layer covers one surface of the piezoelectric film layer, which is far away from the thin film transistor layer, and at least part of the excitation layer covers one surface of the Tx PIN, which is far away from the thin film transistor layer; the electric connecting pieces are respectively and electrically connected to the Rx PIN of the excitation layer and the Rx PIN of the thin film transistor layer. The mode that the excitation layer needs to be electrically connected with the wiring firstly and then connected to the PIN through the wiring in the prior art can be changed, so that the contact resistance generated by electrical switching can be reduced, and the ultrasonic emission efficiency can be improved. The ultrasonic module provided by the invention can reduce the contact resistance to be below 2 ohms, even lower than 1 ohm. Furthermore, by separating the Tx PIN from the Rx PIN and respectively adopting different electric connection modes, the connection strength between the PIN on the electric connection piece and the PIN on the thin film transistor layer can be enhanced, so that the problems of easy occurrence of fracture and the like under the condition that the thickness of the piezoelectric thin film layer is larger can be avoided.
The invention also provides an ultrasonic sensor which comprises the ultrasonic module, so that the ultrasonic sensor also has the corresponding beneficial effects of the ultrasonic module.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A preparation method of an ultrasonic module is characterized by comprising the following steps: it includes: t x PIN, Rx PIN and piezoelectric film layer formed on a thin film transistor layer; forming an excitation layer to cover one surface of the piezoelectric thin film layer far away from the thin film transistor layer and at least partially cover one surface of the T x PIN far away from the thin film transistor layer; and providing an electrical connector which is electrically connected with the Rx PIN of the excitation layer and the Rx PIN of the thin film transistor layer respectively.
2. The method for preparing an ultrasonic module as set forth in claim 1, wherein: the electrical connection member electrically connected to the excitation layer specifically includes: and fully covering the T x PIN with the excitation layer and realizing electric connection, and further electrically connecting the electric connecting piece to the excitation layer.
3. The method for preparing an ultrasonic module as set forth in claim 1, wherein: the electrical connection member electrically connected to the excitation layer specifically includes: covering the excitation layer on the T x PIN, wherein the T x PIN can be divided into an exposed part and a covered part, the exposed part is electrically connected with the electric connecting piece through a conductive structure, and the covered part is directly and electrically connected with the excitation layer, so that the electric connecting piece is indirectly and electrically connected with the excitation layer.
4. An ultrasonic wave module, its characterized in that: the thin film transistor array comprises a thin film transistor layer, a piezoelectric thin film layer arranged on the thin film transistor layer, at least one T x PIN and a plurality of Rx PINs; the ultrasonic module further comprises an excitation layer and an electric connector, wherein the excitation layer covers one surface of the piezoelectric thin film layer, which is far away from the thin film transistor layer, and at least part of the excitation layer covers one surface of the T x PIN, which is far away from the thin film transistor layer; the electric connecting pieces are respectively and electrically connected to the Rx PIN of the excitation layer and the Rx PIN of the thin film transistor layer.
5. the ultrasonic module of claim 4, wherein: the excitation layer comprises a first excitation layer covering the thin film transistor layer and a second excitation layer at least partially covering the T x PIN, and the thickness of the first excitation layer is larger than that of the second excitation layer.
6. The ultrasonic module of claim 4, wherein: the number of the T x PIN is one or more, and the number of the Rx PIN is more.
7. The ultrasonic module of claim 4, wherein: the excitation layer covers the T x PIN completely and realizes electric connection, and a conductive structure is arranged between the electric connecting piece and the excitation layer so that the electric connecting piece is electrically connected with the excitation layer.
8. the ultrasonic module of claim 4, wherein: the excitation layer is partially covered on the T x PIN and is electrically connected with the T x PIN, the T x PIN of the thin film transistor layer comprises an exposed part and a covered part, the exposed part is electrically connected with the electric connecting piece through a conductive structure, and the covered part is directly and electrically connected with the excitation layer, so that the electric connecting piece is indirectly and electrically connected with the excitation layer.
9. An ultrasound module as claimed in claim 7 or 8, wherein: the electric connector comprises a plurality of PINs, and a conductive structure is arranged between the PINs and the Rx PIN of the thin film transistor layer so as to enable the PINs to be electrically connected with the Rx PIN.
10. An ultrasonic sensor, characterized in that it comprises an ultrasonic module according to any one of claims 4-8.
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