CN110534621A - Drum-type three primary colours Micro-LED chip transfer method - Google Patents

Drum-type three primary colours Micro-LED chip transfer method Download PDF

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Publication number
CN110534621A
CN110534621A CN201910790328.0A CN201910790328A CN110534621A CN 110534621 A CN110534621 A CN 110534621A CN 201910790328 A CN201910790328 A CN 201910790328A CN 110534621 A CN110534621 A CN 110534621A
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micro
led chip
roller
substrate
primary colours
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周圣军
雷宇
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Wuhan University WHU
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Wuhan University WHU
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention relates to a kind of drum-type three primary colours Micro-LED chip transfer methods, belong to field of display technology, comprising: provide the monochromatic Micro-LED chip array donor substrate for having functional layer;Roller with shape-memory polymer micro-structure is pre-processed;Using pretreated roller roll donor substrate, while use laser irradiation decomposition function layer, pickup Micro-LED chip;It provides and is integrated with the receptor substrate of driving circuit, roll receptor substrate with the roller for having picked up Micro-LED chip, while with laser irradiation shape-memory polymer micro-structure, Micro-LED chip is transferred to receptor substrate;It repeats the above steps, red, green, blue Micro-LED chip is transferred to receptor substrate in batches, realizes three primary colours Micro-LED integrated chip.Micro-LED chip extensive, high efficiency and can be accurately transferred on rigid substrates or flexible base board by the present invention, realize the integrated of three primary colours Micro-LED chip, pickup in transfer process of the present invention and place relatively controllable, enormously simplify operating process.

Description

Drum-type three primary colours Micro-LED chip transfer method
Technical field
The present invention relates to field of display technology, and in particular to a kind of drum-type three primary colours Micro-LED chip transfer method.
Background technique
Micro-LED is display technology of new generation, refers to and integrates high density LED (Light in microsize Emitting Diode, light emitting diode) array technology, LED size is reduced to less than 50 μm, display equipment is then integrated in Bottom plate on, each Micro-LED is equivalent to a pixel, can addressing, individually light.Skill is shown with tradition such as LCD, OLED Art is compared, and Micro-LED has that low-power consumption, high brightness, high efficiency, the response time is short, the service life is long, ultrahigh resolution and color are full The advantages that with spending.Micro-LED has fairly obvious advantage, and there is huge application prospect in future.
Micro-LED chip is also faced with some technological challenges in realizing industrialization process at present, and wherein flood tide transfers skill Art is one of main bottleneck.How the Micro-LED chip of a large amount of miniature scales is transferred to big ruler by flood tide transfer technique It is the important technology of Micro-LED product mass production on very little substrate.When Micro-LED chip size is constantly contracted to tens Micron, the precision and efficiency of existing single pickup transfer equipment will be no longer applicable in.In addition, the transfer of PDMS seal is rate correlation , operating process complicated difficult control.How the flood tide transfer of high efficiency and low cost be at present main research the technical issues of is realized.
Summary of the invention
The purpose of the present invention is to provide a kind of drum-type three primary colours Micro-LED chip transfer method, this method can be incited somebody to action Micro-LED chip is extensive, high efficiency and is accurately transferred on rigid substrates or flexible base board, realizes Micro-LED core Piece integrates.
The present invention solves scheme used by above-mentioned technical problem:
A kind of drum-type three primary colours Micro-LED chip transfer method, includes the following steps:
S1: taking donor substrate, and the donor substrate includes functional layer and the feux rouges being arranged in the functional layer or green Light or blue light Micro-LED chip array, wherein the functional layer occurs to divide after the laser energy for absorbing predetermined wavelength range Solution;
S2: roller is taken, the outer surface of the roller is covered with the microstructured layers formed by shape-memory polymer, described micro- There are multiple protrusions on the surface of structure sheaf, the roller is handled so that multiple protrusions on the microstructured layers are pressure Level state;
S3: with treated, the roller rolls the donor substrate, while laser being irradiated from the lower section of donor substrate The functional layer is to decompose the functional layer, the function that the roller will be decomposed during rolling on the donor substrate Micro-LED chip at ergosphere is picked up from donor substrate onto the roller;
S4: taking the receptor substrate for being integrated with driving circuit, by the Micro-LED chip attached on the roller with it is described The roller is rolled on the receptor substrate after the driving circuit exactitude position on receptor substrate surface, while using laser spoke According to the microstructured layers so that the microstructured layers restore to original shape, the roller in the rolling process will thereon Micro-LED chip is transferred on the receptor substrate and guarantees that the Micro-LED chip and the driving circuit are accurately right Position;
S5: step S1~S4 is repeated, by feux rouges, green light, three kinds of blue light monochromatic Micro-LED chips in batches from described It is transferred on donor substrate on the receptor substrate, completes the integrated of three primary colours Micro-LED chip.
Further, the donor substrate further includes temporary substrates, and the functional layer is arranged on the temporary substrates, institute Temporary substrates are stated to be made of translucent material.
Further, the temporary substrates are by sapphire, SiO2、Si3N4, glass, any one system in transparent resin At.
Further, in the pick process of step S3, using laser from the lower section of the donor substrate selectively spoke According to the functional layer selectively to be decomposed to the functional layer, the Micro- is selectively picked up in the roller realization LED chip.
Further, the roller includes transparent hollow stack shell, and the microstructured layers are covered on outside the hollow stack shell On surface, the bored roll both ends are connect to drive the drum movement with driving device, and in step s 4, described hollow Laser beam splitter is additionally provided with inside stack shell.
Further, the microstructured layers include multiple grid cells, and the grid cell includes bottom surface and multiple convex For the prismatic side wall of the bottom surface, the prismatic side wall forms the protrusion on the bottom surface.
Further, the donor substrate is fixed on first processing platform, is used on first processing platform Place the donor substrate region be transparent region, first processing platform it is fixed in the pick process of step S3 and The roller rolls the donor substrate in the form of pure rolling.
Further, in step s3, by adjusting the height of first processing platform to realize to alms giver's base The adjusting of amount of force between plate and the roller.
Further, in step s 4, the receptor substrate is fixed on second processing platform, in the roller During rolling, second processing platform remains a constant speed translation, and the roller is using axle center as center of circle uniform rotation and its line Speed and the translational velocity of the second processing platform are consistent, and the roller rolls the receptor substrate in the form of pure rolling.
Further, the receptor substrate is flexible material or resistant to bending rigid material.
Compared with prior art, the present invention at least has the advantages that
1) present invention proposes a kind of drum-type Micro-LED chip transfer method, and this method absorbs laser using functional layer The effect to fail after energy completes the separation of Micro-LED chip and donor substrate to realize roller to Micro-LED chip Pickup;In addition, the present invention realizes roller by selectively decomposition function layer to Micro-LED chip selectivity It picks up;The present invention also completes Micro-LED core using the micro-structure that laser processing fuel factor changes shape memory polymer surface The placement of piece;Micro-LED chip extensive, high efficiency and can be quickly and accurately transferred to rigid substrates or flexibility by the present invention On substrate, three primary colours Micro-LED integrated chip is realized;In transfer process, pass through real-time monitoring and control roller and acceptor The relative velocity and interaction force of substrate improve the precision and yield of transfer, furthermore it is possible to turned simultaneously by multiple rollers The efficiency of transfer can be improved in the form of print.
2) present invention is picked up Micro-LED chip using with the shape-memory polymers of microstructured layers, into Microstructured layers are subjected to temperature-pressure pretreatment before the pickup of row Micro-LED chip, make to become state of applanation at the top of microstructured layers, Increase the contact area between Micro-LED chip, to increase adhesive force;When placing Micro-LED chip, using sharp Light irradiated heat shape-memory polymer, makes it restore to original shape, and the structure of surface bulge is by Micro-LED chip top It rises, the way of contact becomes line contact from face contact, reduces adhesive force;The deformation twice of the microstructured layers can cause adhesive force size High degree occurs to change, further increases the reliability of transfer process, and the micro-structure deformation initial time can be by swashing Light radiation parameter is regulated and controled, and compared to conventional PDMS seal transfer method, avoids quickly removing and stripping process at a slow speed Uncontrollable defect, enormously simplifies operating process, solves the problems, such as " rate is related " in the transfer of PDMS seal.
Detailed description of the invention
Fig. 1 is drum-type three primary colours Micro-LED chip transfer method flow chart provided in an embodiment of the present invention;
Fig. 2 is donor substrate structural schematic diagram provided in an embodiment of the present invention;
Fig. 3 is roller frame schematic diagram provided in an embodiment of the present invention;
Fig. 4 is shape-memory polymer micro-structure schematic diagram provided in an embodiment of the present invention;
Fig. 5 is three primary colours Micro-LED chip pick-up process schematic diagram provided in an embodiment of the present invention;
Fig. 6 is three primary colours Micro-LED chip pick-up process stereoscopic schematic diagram provided in an embodiment of the present invention;
Fig. 7 is three primary colours Micro-LED chip placement process schematic diagram provided in an embodiment of the present invention;
Fig. 8 is three primary colours Micro-LED chip placement process stereoscopic schematic diagram provided in an embodiment of the present invention.
Description of symbols:
100- donor substrate 101- temporary substrates
102- functional layer 103- red/green/blue Micro-LED chip array
The transparent stack shell of 200- roller 201-
The bottom surface 202- shape memory polymer layer 203-
204- triangular prism shape side wall 300- receptor substrate
400- the first processing platform the second processing platform of 500-
600- monitoring device 700- laser beam splitter
800- laser
Specific embodiment
For a better understanding of the present invention, the following examples are to further explanation of the invention, but the contents of the present invention It is not limited solely to the following examples.
It is constantly reduced in view of Micro-LED chip size, the low efficiency of flood tide transfer, the present invention provides a kind of drum-type Three primary colours Micro-LED chip transfer method, as shown in Figure 1, including the following steps:
S1: the donor substrate 100 with feux rouges or green light or blue light Micro-LED chip array is taken, sees Fig. 2, the alms giver Substrate 100 includes temporary substrates 101, the functional layer 102 being arranged on temporary substrates 101 and is arranged in functional layer 102 Feux rouges or green light or blue light Micro-LED chip array 103, wherein functional layer 102 is in the laser energy for absorbing predetermined band range It can decompose after amount, in the present embodiment, functional layer 102 uses forbidden bandwidth to be made of 5eV material below, and it can be inhaled Receive the laser energy of 248nm and decomposition.
For the ease of the transmission of laser, temporary substrates 101 are then by sapphire, SiO2、Si3N4, glass, transparent resin it is contour Any one in light transmittance material is made.And feux rouges or green light or blue light Micro-LED chip array 103 can also be horizontal type Any one in structure, vertical type structure and flip chip type structure.
S2: taking roller 200, see Fig. 3, which includes transparent hollow cylinder 201 and be covered on hollow cylinder 201 surfaces and the microstructured layers 202 formed by shape-memory polymer.In subsequent placement process, in the hollow cylinder 201 Portion is additionally provided with laser beam splitter 700, for the ease of in the irradiation to microstructured layers 202 of laser light hollow cylinder 201, this is hollow Cylinder 201 is also made of high-transmission rate material.
Microstructured layers 202 on roller are made of shape-memory polymer, which, which refers to, to pass through Temperature controls the polymer material of change in shape, i.e. thermotropic high molecule deformable material, and styrene butadiene copolymers can be used Any of them such as object, shape memory polyurethane and polynorbornene are made.As shown in figure 4, microstructured layers 202 include multiple Rectangular mesh unit, each grid cell include bottom surface 203 and multiple protrude from bottom surface 203 and successively end to end trigone Cylindrical side wall 204, triangular prism shape side wall 204 form protrusion on bottom surface 203.In the present embodiment, grid cell is having a size of 10 × 10~20 × 20 μm, the angle between the lateral surface and bottom surface of prism-shaped side wall 204 is 45~60 °, triangular prism shape side wall bottom Side length is 6~12 μm.The inventors discovered that setting 150~200mm for the diameter of 200 working region of roller, width is set as 200~300mm, wall thickness are set as 15-20mm, and the thickness of microstructured layers be set as 50~75 μm it is more appropriate.For the ease of Roller 200 is driven to roll, the end of hollow cylinder 201 is connect with driving device provides power with the rolling for roller 200.
Temperature-pressure processing is carried out to the microstructured layers 202 on above-mentioned 200 surface of roller, makes the rib on its microstructured layers 202 The protrusion that cylindrical side wall 204 is formed becomes state of applanation, to increase roller with 103 contact area of Micro-LED chip to increase Adhesive force of the swift to Micro-LED chip.
S3: as shown in Figure 5 and Figure 6, donor substrate 100 is fixed on the first processing platform 400, receptor substrate herein 300 can be used flexible material or resistant to bending rigid material is made, for placing donor substrate 100 on the first processing platform 400 Region be transparent region, which is made of high transparency material, convenient for the transmission of laser.The roller that takes that treated 200 are placed on donor substrate 100, at this time can be by adjusting the height of the first processing platform 400 to adjust roller 200 and apply Amount of force between main substrate 100 can effectively pick up Micro-LED chip to guarantee that roller 200 is subsequent, at this In the pick process of step, amount of force is that 8N is more appropriate between the two for holding.
The driving device being connected with roller 200 is opened, driving device driving roller 200 rolls on donor substrate 100, In During rolling, the first processing platform 400 is remained stationary, and roller 200 is then in a manner of pure rolling on donor substrate 100 Movement, the speed that roller 200 rolls are 2mm/s, while using laser 800 by multiple laser under the first processing platform 400 Side's selectivity irradiates the functional layer 102 on donor substrate 100 so that the functional layer 102 on donor substrate 100 is selected It is decomposed to selecting property, the Micro-LED chip at 102 place of being decomposed of functional layer is also just separated with donor substrate 100, since shape is remembered Polymer is recalled with stickiness, and such roller 200 can be by the Micro-LED core after separation when rolling on donor substrate 100 Piece is attached on roller 200, and this method for selectively irradiating functional layer 102 is able to achieve roller 200 to Micro-LED chip Carry out selective pickup.In the pick process, 400 upper surface of 200 axial line of strict guarantee roller and the first processing platform In parallel, it avoids leading to isolated with donor substrate 100 part in pick process since inclination generates discontinuity Micro-LED chip is not picked to roller 200 in the rolling process.
S4: being shown in Fig. 7 and Fig. 8, takes the receptor substrate 300 for being integrated with driving circuit, and receptor substrate 300 is fixed on second and is added On work platform 500, roller 200 is placed on receptor substrate 300, and is calibrated using monitoring device 600 so as to attach to rolling The Micro-LED chip on 200 surfaces of cylinder and the driving circuit exactitude position on 300 surface of receptor substrate.Driving device is opened later Work is so that roller 200 is rolled in 300 upper surface of receptor substrate, and in the rolling process, the second processing platform 500 is at the uniform velocity translatable, Roller 200 is using axle center as center of circle uniform rotation and its linear velocity is consistent with 500 translational velocity of the second processing platform, and speed is 0.5mm/s makes roller 200 and receptor substrate 300 keep opposing stationary in contact area, and roller 200 is then in a manner of pure rolling It is moved on receptor substrate 300.At the same time, the laser 800 positioned at 200 side of roller irradiates high-power single beam laser On laser beam splitter 700 inside to roller 200, high-power single beam laser is divided into multi beam low-power by laser beam splitter 700 Light beam, adjust in advance multi beam low power laser make its from the parallel irradiation to roller 200 in the inside of roller 200 with receptor substrate 300 On the microstructured layers 202 of contact area, the shape-memory polymer temperature at the microstructured layers after being illuminated is more than its vitrifying Conversion temperature, microstructured layers 202 restore from state of applanation to original shape, and the prism-shaped side wall 204 of grid cell is in recovery Micro-LED chip is jacked up in the process, and microstructured layers 202 and the way of contact of Micro-LED chip is made to become line from face contact Contact, to reduce adhesive force, Micro-LED chip falls off from roller 200 under gravity and van der Waals interaction, is transferred to On receptor substrate 300 at corresponding position, on the red green blue light monochrome Micro-LED chip and receptor substrate 300 after transfer Driving circuit exactitude position.During placement Micro-LED chip, can using multiple rollers 200 simultaneously by It is transferred on main substrate 300, to improve transfer efficiency.
In addition, also wanting the axial line and second of strict guarantee roller 200 during above-mentioned placement Micro-LED chip 500 upper surface of processing platform is parallel, avoids causing part Micro-LED chip accurately right with driving circuit due to inclination Position.In this step, can also by adjusting the height of 200 axial line of roller to control roller 200 and receptor substrate 300 it Between amount of force, the inventors discovered that keeping amount of force between the two in transfer process is that 1N is appropriate.Separately Outside, entirely place Micro-LED chip during, need using 600 real-time monitoring Micro-LED chip of monitoring device with The alignment situation of driving circuit then needs to recalibrate positioning when error between the two is larger.
S5: the step of repeating S1 to S4, by feux rouges Micro-LED chip, green light Micro-LED chip, blue light Micro- LED chip is transferred to receptor substrate in batches, realizes three primary colours Micro-LED integrated chip.
The above is a preferred embodiment of the present invention, cannot limit the right model of the present invention with this certainly It encloses, it is noted that for those skilled in the art, without departing from the principle of the present invention, may be used also To make several improvement and variation, these, which improve and change, is also considered as protection scope of the present invention.

Claims (10)

1. a kind of drum-type three primary colours Micro-LED chip transfer method, which comprises the steps of:
S1: taking donor substrate, the donor substrate include functional layer and the feux rouges or green light that are arranged in the functional layer or Blue light Micro-LED chip array, wherein the functional layer is decomposed after the laser energy for absorbing predetermined wavelength range;
S2: taking roller, and the outer surface of the roller is covered with the microstructured layers formed by shape-memory polymer, the micro-structure There are multiple protrusions on the surface of layer, the roller is handled so that multiple protrusions on the microstructured layers are pressing shape State;
S3: with treated, the roller rolls the donor substrate, while by laser from described in the irradiation of the lower section of donor substrate Functional layer is to decompose the functional layer, the functional layer that the roller will be decomposed during rolling on the donor substrate The Micro-LED chip at place is picked up from the donor substrate onto the roller;
S4: taking the receptor substrate for being integrated with driving circuit, by the Micro-LED chip attached on the roller and the acceptor The roller is rolled on the receptor substrate after the driving circuit exactitude position of substrate surface, while using laser irradiation institute Microstructured layers are stated so that the microstructured layers restore to original shape, the roller is in the rolling process by Micro- thereon LED chip is transferred on the receptor substrate and guarantees the Micro-LED chip and the driving circuit exactitude position;
S5: step S1~S4 is repeated, by feux rouges, green light, three kinds of blue light monochromatic Micro-LED chips in batches from the alms giver It is transferred on substrate on the receptor substrate, completes the integrated of three primary colours Micro-LED chip.
2. drum-type three primary colours Micro-LED chip transfer method as described in claim 1, which is characterized in that the alms giver Substrate further includes temporary substrates, and the functional layer is arranged on the temporary substrates, and the temporary substrates are made of translucent material.
3. drum-type three primary colours Micro-LED chip transfer method as claimed in claim 2, which is characterized in that described interim Substrate is by sapphire, SiO2、Si3N4, glass, any one in transparent resin be made.
4. drum-type three primary colours Micro-LED chip transfer method as described in claim 1, which is characterized in that in step S3 Pick process in, use laser selectively to irradiate the functional layer to the functional layer from the lower section of the donor substrate It is selectively decomposed, the Micro-LED chip is selectively picked up in the roller realization.
5. drum-type three primary colours Micro-LED chip transfer method as described in claim 1, which is characterized in that the roller Including transparent hollow stack shell, the microstructured layers are covered on the hollow stack shell outer surface, the bored roll both ends with Driving device is connected to drive the drum movement, and in step s 4, is additionally provided with laser beam splitter inside the hollow stack shell Device.
6. drum-type three primary colours Micro-LED chip transfer method as described in claim 1, which is characterized in that micro- knot Structure layer includes multiple grid cells, and the grid cell includes bottom surface and multiple prismatic side walls for protruding from the bottom surface, institute It states prismatic side wall and forms the protrusion on the bottom surface.
7. drum-type three primary colours Micro-LED chip transfer method as described in claim 1, which is characterized in that the alms giver Substrate is fixed on first processing platform, and the region on first processing platform for placing the donor substrate is Area pellucida domain, in the pick process of step S3, the fixed and described roller is rolled first processing platform in the form of pure rolling The donor substrate.
8. drum-type three primary colours Micro-LED chip transfer method as claimed in claim 7, which is characterized in that in step S3 In, by adjusting the height of first processing platform to realize to amount of force between the donor substrate and the roller Adjusting.
9. drum-type three primary colours Micro-LED chip transfer method as described in claim 1, which is characterized in that in step S4 In, the receptor substrate is fixed on second processing platform, during roller rolling, second processing Platform remains a constant speed translation, and the roller is using axle center as the translation of center of circle uniform rotation and its linear velocity and the second processing platform speed Degree is consistent, and the roller rolls the receptor substrate in the form of pure rolling.
10. drum-type three primary colours Micro-LED chip transfer method as described in claim 1, which is characterized in that the acceptor Substrate is flexible material or resistant to bending rigid material.
CN201910790328.0A 2019-08-26 2019-08-26 Drum-type three primary colours Micro-LED chip transfer method Pending CN110534621A (en)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111462648A (en) * 2020-04-23 2020-07-28 厦门乾照半导体科技有限公司 Micro-L ED display device, display panel and manufacturing method thereof
CN111584703A (en) * 2020-05-18 2020-08-25 长春希达电子技术有限公司 Preparation method of printed LED template
CN111584697A (en) * 2020-05-18 2020-08-25 长春希达电子技术有限公司 Preparation method of segmented printing type LED display template
CN113437195A (en) * 2021-06-04 2021-09-24 季华实验室 Micro device transfer device and method
CN113540309A (en) * 2020-04-22 2021-10-22 重庆康佳光电技术研究院有限公司 Mass transfer method of Micro LED
CN113782475A (en) * 2020-06-10 2021-12-10 佛山市国星光电股份有限公司 LED chip transfer structure, manufacturing method thereof and chip transfer method
TWI761895B (en) * 2020-07-24 2022-04-21 錼創顯示科技股份有限公司 Micro-electron element transfer apparatus and micro-electron element transfer method
CN114695168A (en) * 2020-12-30 2022-07-01 深圳Tcl新技术有限公司 Chip transfer method and device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103811390A (en) * 2012-11-15 2014-05-21 隆达电子股份有限公司 Die positioning device, die positioning system and die positioning method
CN107658371A (en) * 2017-09-15 2018-02-02 武汉大学 The manufacture method of Micro LED based on laser direct-writing
TW201838142A (en) * 2017-04-06 2018-10-16 優顯科技股份有限公司 Method of batch transferring micro semiconductor structures which can effectively and efficiently pick up a batch of or a large amount of micro structures and transfer them to a target substrate
CN109599463A (en) * 2018-12-07 2019-04-09 广东工业大学 A kind of pick-up structure and transfer method for the transfer of Micro-LED flood tide
CN109808319A (en) * 2017-11-20 2019-05-28 Tcl集团股份有限公司 A kind of seal and preparation method thereof and quantum dot transfer method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103811390A (en) * 2012-11-15 2014-05-21 隆达电子股份有限公司 Die positioning device, die positioning system and die positioning method
TW201838142A (en) * 2017-04-06 2018-10-16 優顯科技股份有限公司 Method of batch transferring micro semiconductor structures which can effectively and efficiently pick up a batch of or a large amount of micro structures and transfer them to a target substrate
CN107658371A (en) * 2017-09-15 2018-02-02 武汉大学 The manufacture method of Micro LED based on laser direct-writing
CN109808319A (en) * 2017-11-20 2019-05-28 Tcl集团股份有限公司 A kind of seal and preparation method thereof and quantum dot transfer method
CN109599463A (en) * 2018-12-07 2019-04-09 广东工业大学 A kind of pick-up structure and transfer method for the transfer of Micro-LED flood tide

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113540309A (en) * 2020-04-22 2021-10-22 重庆康佳光电技术研究院有限公司 Mass transfer method of Micro LED
CN111462648A (en) * 2020-04-23 2020-07-28 厦门乾照半导体科技有限公司 Micro-L ED display device, display panel and manufacturing method thereof
CN111584703A (en) * 2020-05-18 2020-08-25 长春希达电子技术有限公司 Preparation method of printed LED template
CN111584697A (en) * 2020-05-18 2020-08-25 长春希达电子技术有限公司 Preparation method of segmented printing type LED display template
CN113782475A (en) * 2020-06-10 2021-12-10 佛山市国星光电股份有限公司 LED chip transfer structure, manufacturing method thereof and chip transfer method
TWI761895B (en) * 2020-07-24 2022-04-21 錼創顯示科技股份有限公司 Micro-electron element transfer apparatus and micro-electron element transfer method
US11799052B2 (en) 2020-07-24 2023-10-24 PlayNitride Display Co., Ltd. Micro-electronic element transfer apparatus and micro-electronic element transfer method
CN114695168A (en) * 2020-12-30 2022-07-01 深圳Tcl新技术有限公司 Chip transfer method and device
CN113437195A (en) * 2021-06-04 2021-09-24 季华实验室 Micro device transfer device and method

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