CN110534509A - Semiconductor power device - Google Patents

Semiconductor power device Download PDF

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Publication number
CN110534509A
CN110534509A CN201810506071.7A CN201810506071A CN110534509A CN 110534509 A CN110534509 A CN 110534509A CN 201810506071 A CN201810506071 A CN 201810506071A CN 110534509 A CN110534509 A CN 110534509A
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CN
China
Prior art keywords
power device
device chip
igbt
mosfet
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810506071.7A
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Chinese (zh)
Inventor
刘伟
刘磊
袁愿林
毛振东
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Dongwei Semiconductor Co Ltd
Suzhou Oriental Semiconductor Co Ltd
Original Assignee
Suzhou Dongwei Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Dongwei Semiconductor Co Ltd filed Critical Suzhou Dongwei Semiconductor Co Ltd
Priority to CN201810506071.7A priority Critical patent/CN110534509A/en
Priority to PCT/CN2019/083884 priority patent/WO2019223481A1/en
Priority to TW108114782A priority patent/TWI731328B/en
Publication of CN110534509A publication Critical patent/CN110534509A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H01L2224/48096—Kinked the kinked part being in proximity to the bonding area on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The invention belongs to semiconductor power device technology fields, specifically disclose a kind of semiconductor power device, including MOSFET power device chip and IGBT power device chip；The MOSFET power device chip and the IGBT power device chip are encapsulated in the same packaging body, in which: the emitter of the source electrode of the MOSFET power device chip and the IGBT power device chip connects the source lead of the packaging body；The drain electrode of the MOSFET power device chip and the collector of the IGBT power device chip connect the drain lead of the packaging body；The grid of the grid of the MOSFET power device chip and the IGBT power device chip connects the gate lead of the packaging body.Semiconductor power device provided by the invention can reduce the on-state loss of semiconductor power device, improve system effectiveness.

Description

Semiconductor power device
Technical field
The invention belongs to semiconductor power device technology fields, more particularly to a kind of partly leading for low resistance-temperature coefficient Body power device.
Background technique
With the continuous development of new energy and energy-efficient industry, the requirement to the MOSFET power device of low-power consumption is more next Higher, the requirement to the current handling capability of single MOSFET power device chip is also increasing, and MOSFET power device The manageable current density of chip is relatively small.Meanwhile MOSFET power device has bigger resistance-temperature coefficient, The conducting resistance of MOSFET power device increases rapidly as the temperature increases, this significantly increases MOSFET power device On-state loss, reduce system effectiveness.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of semiconductor power device, it is in the prior art to solve The problem of on-state loss of MOSFET power device is high and further promotes MOSFET power device accessible current density.
To reach above-mentioned purpose of the invention, the present invention provides a kind of semiconductor power devices, comprising:
MOSFET power device chip and IGBT power device chip；
The MOSFET power device chip and the IGBT power device chip are encapsulated in the same packaging body, In:
The emitter of the source electrode of the MOSFET power device chip and the IGBT power device chip connects the envelope Fill the source lead of body；
The drain electrode of the MOSFET power device chip and the collector of the IGBT power device chip connect the envelope Fill the drain lead of body；
The grid of the grid of the MOSFET power device chip and the IGBT power device chip connects the encapsulation The gate lead of body.
Optionally, the IGBT power device chip is the IGBT power transistor of trench gate structure.
Optionally, the IGBT power device chip is the IGBT power transistor of planar gate structure.
Optionally, the IGBT power device chip has negative resistance-temperature coefficient.
Optionally, the MOSFET power device chip is vertical double diffused metal-oxide semiconductor field effect crystal Pipe.
Optionally, the MOSFET power device chip is the power transistor of super-junction structures.
A kind of semiconductor power device provided by the invention is by MOSFET power device chip and IGBT power device chip Post package in parallel is in the same packaging body, so that the resistance-temperature coefficient that the resistance of semiconductor power device rises with temperature It is low, it can reduce the on-state loss of semiconductor power device, improve system effectiveness, particularly suitable for high current, high-power And the system under high temperature.
Detailed description of the invention
In order to more clearly illustrate the technical scheme of the exemplary embodiment of the present invention, below to required in description embodiment The attached drawing to be used does a simple introduction.Obviously, the attached drawing introduced is present invention a part of the embodiment to be described Attached drawing, rather than whole attached drawings without creative efforts, may be used also for those of ordinary skill in the art To obtain other attached drawings according to these attached drawings.
Fig. 1 is MOSFET power device chip and IGBT power device in a kind of semiconductor power device provided by the invention Part chip package is in the same intracorporal schematic diagram of internal structure of encapsulation；
Fig. 2 is a kind of schematic equivalent circuit of semiconductor power device provided by the invention；
Fig. 3 is a kind of output characteristic curve figure of MOSFET power device of the prior art；
Fig. 4 is a kind of output characteristic curve figure of IGBT power device of the prior art；
Fig. 5 is a kind of output characteristic curve figure of semiconductor power device provided by the invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below with reference to attached in the embodiment of the present invention Figure, by concrete mode, is fully described by technical solution of the present invention.Obviously, described embodiment is of the invention one Divide embodiment, instead of all the embodiments, based on the embodiment of the present invention, those of ordinary skill in the art are not making wound The every other embodiment that the property made obtains under the premise of working, falls within the scope of protection of the present invention.
It should be appreciated that the terms such as " having " used in the present invention, "comprising" and " comprising " do not allot one Or the presence or addition of a number of other elements or combinations thereof.Figure of description is schematically, to should not limit the scope of the present invention.
Fig. 1 is MOSFET power device chip and IGBT power device in a kind of semiconductor power device provided by the invention Part chip package is merely exemplary in the intracorporal schematic diagram of internal structure of the same encapsulation, Fig. 1 to show MOSFET power device Part chip 50 and IGBT power device chip 60 are encapsulated in the same intracorporal wire bond structure schematic diagram of encapsulation, as shown in Figure 1, this It invents in a kind of semiconductor power device provided: source electrode (pad layers of source electrode) 51 and IGBT of MOSFET power device chip 50 The emitter (pad layers of emitter) 61 of power device chip 60 connects the source lead of packaging body by source metal conducting wire 71 81；The drain electrode of MOSFET power device chip 50 and the collector of IGBT power device chip 60 connect the drain lead of packaging body 82 (drain metal layer of MOSFET power device chip 50 and the collector electrode metal layer of IGBT power device chip 60 are located at The back side of its chip, so that drain lead 82 is directly contacted with the metal framework in packaging body, without routing)； The grid (pad layers of grid) 53 of MOSFET power device chip 50 and the grid (pad layers of grid) of IGBT power device chip 60 63 connect the gate lead 83 of packaging body by gate metal conducting wire 73.
It should be noted that the MOSFET power device chip 50 and IGBT power device chip 60 in Fig. 1 are only examples The structure of property, according to different design requirements, MOSFET power device chip 50 and IGBT power device chip 60 can have Different chip sizes and pressure resistance can also have different pad layer shape or structure.In addition, MOSFET power device chip 50 and IGBT power device chip 60 also can built-in grid resistance.
MOSFET power device chip in a kind of semiconductor power device of the invention can be the function of super-junction structures Rate transistor is also possible to vertical double diffused metal-oxide semiconductor field effect transistor.IGBT power device chip can be with It is the IGBT power transistor of trench gate structure, is also possible to the IGBT power transistor of planar gate structure.The present invention couple The type and structure of MOSFET power device chip and IGBT power device chip are with no restriction.
Fig. 2 is a kind of schematic equivalent circuit of semiconductor power device provided by the invention, as shown in Fig. 2, of the invention The equivalent circuit of semiconductor power device a kind of include MOSFET power device 202 and IGBT power device 101, in which: The source electrode 21 of MOSFET power device 202 connect with the emitter 11 of IGBT power device 101 and accesses source voltage 31； The drain electrode 22 of MOSFET power device 202 connect with the collector 12 of IGBT power device 101 and accesses drain voltage 32； The grid 23 of MOSFET power device 202 connect with the grid 13 of IGBT power device 101 and accesses grid voltage 33.
Optionally, the IGBT power device chip in a kind of semiconductor power device of the invention has negative resistance-temperature It spends coefficient and further decreases semiconductor function to offset the positive resistance-temperature coefficient of MOSFET power device chip as much as possible The on-state loss of rate device at high temperature.
MOSFET power device chip and IGBT power device chip category in a kind of semiconductor power device of the invention In structure in parallel, since IGBT power device chip has lesser even negative resistance-temperature coefficient, this can be reduced Or the positive resistance-temperature coefficient of MOSFET power device chip is offset, so that semiconductor power device of the invention It with low resistance-temperature coefficient, and then can reduce the on-state loss of semiconductor power device at high temperature, improve system effect Rate, particularly suitable for the system under high current, high-power and high temperature.
A kind of semiconductor power device of the invention, when drain-source voltage Vds is smaller, the electric current master of semiconductor power device It to be flowed through from MOSFET power device chip, when drain-source voltage Vds increases, flow through the electric current of IGBT power device chip It will increase, continue to increase with drain-source voltage Vds, the electric current for flowing through IGBT power device chip can be equal to or more than stream Cross the electric current of MOSFET power device chip.Since the electric current of semiconductor power device of the invention is by flowing through MOSFET power The electric current composition of the electric current and IGBT power device chip of device chip, and the manageable electric current of IGBT power device chip Density is commonly greater than the manageable current density of MOSFET power device chip, therefore, semiconductor power proposed by the present invention The manageable current density of device is greater than the manageable current density of conventional MOS FET power device.Meanwhile MOSFET function Rate device chip can realize the more conducting resistances smaller than IGBT power device chip in lower drain-source voltage Vds, Therefore, the saturation conduction pressure more much smaller than traditional IGBT power device may be implemented in semiconductor power device proposed by the present invention Drop.
Fig. 3 is a kind of output characteristic curve figure of MOSFET power device of the prior art, and Fig. 4 is one kind of the prior art The output characteristic curve figure of IGBT power device, Fig. 5 are that a kind of output characteristics of semiconductor power device provided by the invention is bent Line chart.Illustratively, what the MOSFET power device in Fig. 3 was selected is Suzhou Dongwei Semiconductor Co., Ltd OSG60R074HSZ product is tested to obtain output characteristic curve figure, and what the IGBT power device in Fig. 4 was selected is Infineon The output characteristic curve figure that the IGW60N60H product of Co., Ltd is tested, Fig. 5 be by OSG60R074HSZ product and The output characteristic curve figure tested after IGW60N60H product is in parallel.By Fig. 3, Fig. 4 and Fig. 5 it is found that by MOSFET function Semiconductor power device after rate device chip and IGBT power device chip are in parallel, manageable current density are greater than The manageable current density of MOSFET power device, and its saturation conduction pressure drop is less than the saturation conduction pressure of IGBT power device Drop.In addition, MOSFET power device chip and IGBT power device chip are encapsulated in the same packaging body, it can simplify and answer With the design of circuit board.
The above specific embodiment and embodiment are to a kind of technical idea of semiconductor power device proposed by the present invention Specific support, this does not limit the scope of protection of the present invention, it is all according to the technical idea provided by the invention, in this technology Any equivalent variations or equivalent change done on the basis of scheme still fall within the range of technical solution of the present invention protection.
Although the embodiments of the present invention have been disclosed as above, but its is not only in the description and the implementation listed With it can be fully applied to various fields suitable for the present invention, for those skilled in the art, can be easily Realize other modification, therefore without departing from the general concept defined in the claims and the equivalent scope, the present invention is simultaneously unlimited In specific details and legend shown and described herein.

Claims (6)

1. a kind of semiconductor power device characterized by comprising
MOSFET power device chip and IGBT power device chip；
The MOSFET power device chip and the IGBT power device chip are encapsulated in the same packaging body, in which:
The emitter of the source electrode of the MOSFET power device chip and the IGBT power device chip connects the packaging body Source lead；
The drain electrode of the MOSFET power device chip and the collector of the IGBT power device chip connect the packaging body Drain lead；
The grid of the grid of the MOSFET power device chip and the IGBT power device chip connects the packaging body Gate lead.
2. a kind of semiconductor power device as described in claim 1, which is characterized in that the IGBT power device chip is ditch The IGBT power transistor of slot grid structure.
3. a kind of semiconductor power device as described in claim 1, which is characterized in that the IGBT power device chip is flat The IGBT power transistor of face grid structure.
4. a kind of semiconductor power device as described in claim 1, which is characterized in that the IGBT power device chip has Negative resistance-temperature coefficient.
5. a kind of semiconductor power device as described in claim 1, which is characterized in that the MOSFET power device chip is Vertical double diffused metal-oxide semiconductor field effect transistor.
6. a kind of semiconductor power device as described in claim 1, which is characterized in that the MOSFET power device chip is The power transistor of super-junction structures.
CN201810506071.7A 2018-05-24 2018-05-24 Semiconductor power device Pending CN110534509A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201810506071.7A CN110534509A (en) 2018-05-24 2018-05-24 Semiconductor power device
PCT/CN2019/083884 WO2019223481A1 (en) 2018-05-24 2019-04-23 Semiconductor power device
TW108114782A TWI731328B (en) 2018-05-24 2019-04-26 Semiconductor power device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810506071.7A CN110534509A (en) 2018-05-24 2018-05-24 Semiconductor power device

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WO (1) WO2019223481A1 (en)

Citations (3)

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US20120299108A1 (en) * 2010-01-29 2012-11-29 Fuji Electric Co., Ltd. Semiconductor device
CN103703566A (en) * 2011-08-02 2014-04-02 罗姆股份有限公司 Semiconductor device, and manufacturing method for same
CN106252320A (en) * 2015-06-12 2016-12-21 富士电机株式会社 Semiconductor device

Family Cites Families (4)

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Publication number Priority date Publication date Assignee Title
US6104149A (en) * 1997-02-28 2000-08-15 International Rectifier Corp. Circuit and method for improving short-circuit capability of IGBTs
US7960997B2 (en) * 2007-08-08 2011-06-14 Advanced Analogic Technologies, Inc. Cascode current sensor for discrete power semiconductor devices
JP6402591B2 (en) * 2014-10-31 2018-10-10 富士電機株式会社 Semiconductor device
DE102015223470A1 (en) * 2015-11-26 2017-06-01 Robert Bosch Gmbh Semiconductor device having a substrate and a first temperature measuring element and method for determining a current flowing through a semiconductor device and current control device for a vehicle

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US20120299108A1 (en) * 2010-01-29 2012-11-29 Fuji Electric Co., Ltd. Semiconductor device
CN103703566A (en) * 2011-08-02 2014-04-02 罗姆股份有限公司 Semiconductor device, and manufacturing method for same
CN106252320A (en) * 2015-06-12 2016-12-21 富士电机株式会社 Semiconductor device

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TWI731328B (en) 2021-06-21
WO2019223481A1 (en) 2019-11-28
TW202005017A (en) 2020-01-16

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Application publication date: 20191203