CN110533149A - A kind of method that silicon chip back side damaging layer counts automatically - Google Patents
A kind of method that silicon chip back side damaging layer counts automatically Download PDFInfo
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- CN110533149A CN110533149A CN201910655466.8A CN201910655466A CN110533149A CN 110533149 A CN110533149 A CN 110533149A CN 201910655466 A CN201910655466 A CN 201910655466A CN 110533149 A CN110533149 A CN 110533149A
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- back side
- silicon chip
- chip back
- damaging layer
- silicon
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06M—COUNTING MECHANISMS; COUNTING OF OBJECTS NOT OTHERWISE PROVIDED FOR
- G06M11/00—Counting of objects distributed at random, e.g. on a surface
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/10—Image acquisition modality
- G06T2207/10056—Microscopic image
- G06T2207/10061—Microscopic image from scanning electron microscope
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30242—Counting objects in image
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
The present invention provides a kind of method that silicon chip back side damaging layer counts automatically, includes the steps that constructing the step of silicon wafer injury of back enumeration data library carries out linear fit and detects and corrects silicon wafer, be specifically included in installation charge-coupled device camera lens on microscope；Shoot silicon chip back side damaging layer picture；Image processing software counts the silicon chip back side damage number of shooting picture；The image processing software of silicon chip back side damage number is counted and is associated storage with the artificial accurate metering of image processing software of silicon chip back side damage number；Repetition handles multiple silicon chip back side damaging layers, establishes silicon wafer injury of back enumeration data library；It is handled using the silicon wafer injury of back enumeration data library of linear fit pair, obtains the regression analysis update equation of image processing software counting；Silicon chip back side damaging layer to be measured is shot, is counted, and count results are modified by regression analysis update equation.The present invention improves the counting efficiency of silicon chip back side damaging layer.
Description
Technical field
The invention belongs to semi-conductor silicon chip production fields, and in particular to a kind of side that silicon chip back side damaging layer counts automatically
Method.
Background technique
(SBD) is damaged at the back side, is one of process flow in electronic-grade silicon polished silicon wafer preparation process.It specifically refers in silicon wafer
It is to form metal gettering center that the back side, which carries out mechanical damage,.When silicon wafer reaches certain temperature, such as Fe, Ni, the meeting such as Cr, Zn
The metallic atom for reducing carrier lifetime will move in silicon body.When these atoms encounter impaired loci in silicon chip back side, they
It will be entrapped and be moved to impaired loci from inside by the light of nature.Injury of back is introduced by impact or the artificial manufacture silicon wafer of abrasion
Back side damage.For example, impact method sand-blast, abrasion are then rubbed with brush in silicon chip surface.Some other damage side
Method is also: one layer of polysilicon of deposit and generating a chemically grown layer.
Reach ideal gettering effect, the density and uniformity of injury of back must reach certain level, therefore, in day
It is an essential testing process to injury of back density and uniformity monitoring often in production.Current SBD monitoring piece is adopted
With P<111>silicon wafer is gently mixed, this piece and production piece use identical oxidation, etching process.Macroscopic Evaluation is carried out after corroding and is shown
Micro mirror counts.The surface SBD fault number is counted under 1000 power microscopes.But since SBD density is very big (see figure
1), therefore, the accuracy of artificial counting method is not high, and one point of number needs the time longer, and working efficiency is low, in particular with
Production capacity is continuously increased, if can not ensure smoothly completing for detection work without improving.
Summary of the invention
To solve the above problems, the present invention provides a kind of method that silicon chip back side damaging layer counts automatically, silicon wafer back is improved
The accuracy of surface damage, while improving the counting efficiency of silicon chip back side damaging layer.
To achieve the goals above, the technical solution adopted by the present invention are as follows:
A kind of method that silicon chip back side damaging layer counts automatically, it is characterised in that: specific steps are as follows:
Step 1: installing charge-coupled device camera lens additional on microscope；
Step 2: shooting using microscopical charge-coupled device camera lens to silicon chip back side damaging layer, silicon chip back side is obtained
Damaging layer damage field and zone of intact are in the shooting picture of different colors in micro-image；
Step 3: being counted using silicon chip back side damage number of the image processing software to shooting picture；
Step 4: the image processing software of silicon chip back side damage number is counted soft with the image procossing of silicon chip back side damage number
The artificial accurate metering of part is associated storage；
It is handled Step 5: repeating step 1 and carrying out analysis one by one to multiple silicon chip back side damaging layers to the method for step 4, thus
Establish silicon wafer injury of back enumeration data library；
Step 6: handling using linear fit the silicon wafer injury of back enumeration data library in step 5, image procossing is obtained
The regression analysis update equation that software counts；
Step 7: being shot using microscopical charge-coupled device camera lens to silicon chip back side damaging layer to be measured；
Step 8: being counted using back side damage number of the image processing software to silicon chip back side damaging layer to be measured shooting picture
Number；
Step 9: the regression analysis update equation obtained using step 5 obtains the count information of back side damage number to step 8
It is modified, to obtain the automatic counting of silicon chip back side damage number.
Further, it in step 3, counts and is also counted using five-spot.
Further, five-spot count five positions include silicon wafer central point, the diameter two parallel with the plane of reference/
Two points at two points and the diameter half radius vertical with the plane of reference at Radius, pass through charge-coupled device mirror
Head shoots five positions of silicon chip back side damage field respectively, is then averaged to the count results of five positions,
Number is damaged as the silicon chip back side in one windows area of the monitoring piece, obtained silicon chip back side damage number is again divided by micro-
Mirror windows area obtains the silicon chip back side damage density value of the monitoring piece.
Further, in step 2 and step 7, different silicon chip back side damaging layers are micro- during microscope photographing
Mirror brightness is all the same.
Further, in step 5, multiple silicon chip back side damaging layers of selection are different densities silicon chip back side damaging layer.
Further, different densities silicon chip back side damage layer number is 110 groups.
The invention has the benefit that a kind of method that silicon chip back side damaging layer counts automatically of the invention, detects silicon wafer
The time that damaging layer (SBD) single-point in the back side counts was shortened within 20 seconds by original 5 minutes, substantially increased counting efficiency.
Meanwhile it is more more accurate than artificial counting using the method that computer counts automatically, it more can objectively reflect the close of SBD monitoring piece
Degree is horizontal.SBD monitoring piece increases to daily 18 (90 points) by daily 6 (30 points) before, if artificial before
The method of counting, each gate time is at least 5 minutes, if it is the situation that density is larger, is all difficult within 5 minutes to count up to one
Point is got off in this way, after yield increase, daily only SBD count this work must or so 8 hours, and to detection
For employee, be engaged in for a long time this work be it is unaffordable, after being counted automatically using computer, after timely yield increase,
The Counts of 18 daily (90 points), which can shorten within 20 minutes, to be completed.
Detailed description of the invention
Fig. 1 is 1000 power microscope lower silicon slice back side damaging layer schematic diagrames；
Fig. 2 is that the silicon chip back side damaging layer under charge-coupled device camera lens shoots picture.
Specific embodiment
In order to which those skilled in the art better understood when technical solution provided by the present invention, below with reference to specific
Embodiment is illustrated.
A kind of method that silicon chip back side damaging layer counts automatically of the invention, from the aobvious of silicon chip back side damaging layer surface fault
From the point of view of micro- image, damage location and non-damage location show two kinds of completely different forms, and single layer under the microscope
Wrong size and form is almost the same, accordingly feature, obtain it is a kind of in such a way that computer counts automatically come to SBD injury of back number
Amount is counted, to improve working efficiency, while can also be improved the accuracy of SBD counting, be reduced labour cost.
Specific steps to silicon wafer injury of back enumeration data library include:
Step S1: installing dedicated charge-coupled device (CCD) camera lens additional on microscope, at the same be equipped with it is dedicated medically
Counting software, such as Digital-Camera 6.0.
Step S2: the basic principle counted automatically is to be captured using CCD camera lens to SBD micro-image, according to damage
Region shows different colors from zone of intact in micro-image, is divided using image processing software micro-image
Analysis, therefore, the bright-dark degree of microscope light directly affects the effect of taking pictures of CCD, and adjusts in microscope and draws on brightness knob
Graduation mark is fixed out, it is desirable that when progress SBD counting is taken pictures, microscope brightness is uniformly adjusted to the position of graduation mark calibration,
Brightness can be unified when guaranteeing that each employee takes pictures.
Step S3: the SBD injury of back monitoring piece of certain amount (totally 110 groups of data) different densities is chosen, dedicated CCD is utilized
It takes pictures to SBD situation, accurate artificial counting is carried out to SBD number density in photographic region.
Step S4: the SBD density in photo is counted automatically with Digital-Camera6.0 dedicated Counting software again
Number.
Step S5: statistics is carried out with image processing software count results to artificial accurate metering result respectively and is compared, is gone forward side by side
Row correlation analysis makes the corresponding relationship of two kinds of count results, will be at image by adjusting dedicated Counting software inner parameter
Reason software count results are adjusted to accurate SBD numerical value.
A regression analysis update equation as the embodiment silicon wafer injury of back enumeration data library are as follows: artificial precise art
=image processing software counts * 0.3011218+1.0364089.The relative coefficient of the result is that 0.98747, R Square is
0.975096, Adjusted R Square is 0.974866, and regression fit effect is good.
Silicon chip back side damaging layer to be measured is detected on the basis of regression analysis update equation, specifically utilizes microscope
Charge-coupled device camera lens silicon chip back side damaging layer to be measured is shot, later recycle image processing software to silicon to be measured
The back side damage number of piece back side damaging layer shooting picture is counted, the regression analysis amendment side finally obtained using step 5
The count information that journey obtains back side damage number to step 8 is modified, thus the silicon chip back side damage counted automatically
Number.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
The present invention will not be limited to the embodiments shown herein, and is to fit to special with principles disclosed herein and novelty
The consistent widest scope of point.
Claims (6)
1. a kind of method that silicon chip back side damaging layer counts automatically, it is characterised in that: specific steps are as follows:
Step 1: installing charge-coupled device camera lens additional on microscope；
Step 2: shooting using microscopical charge-coupled device camera lens to silicon chip back side damaging layer, silicon chip back side is obtained
Damaging layer damage field and zone of intact are in the shooting picture of different colors in micro-image；
Step 3: being counted using silicon chip back side damage number of the image processing software to shooting picture；
Step 4: the image processing software of silicon chip back side damage number is counted soft with the image procossing of silicon chip back side damage number
The artificial accurate metering of part is associated storage；
It is handled Step 5: repeating step 1 and carrying out analysis one by one to multiple silicon chip back side damaging layers to the method for step 4, thus
Establish silicon wafer injury of back enumeration data library；
Step 6: handling using linear fit the silicon wafer injury of back enumeration data library in step 5, image procossing is obtained
The regression analysis update equation that software counts；
Step 7: being shot using microscopical charge-coupled device camera lens to silicon chip back side damaging layer to be measured；
Step 8: being counted using back side damage number of the image processing software to silicon chip back side damaging layer to be measured shooting picture
Number；
Step 9: the regression analysis update equation obtained using step 5 obtains the count information of back side damage number to step 8
It is modified, thus the silicon chip back side damage number counted automatically.
2. a kind of method that silicon chip back side damaging layer counts automatically according to claim 1, it is characterised in that: step 3
In, it counts and is also counted using five-spot.
3. a kind of method that silicon chip back side damaging layer counts automatically according to claim 2, it is characterised in that: five-spot meter
Five several positions include silicon wafer central point, two points and and the plane of reference at the diameter half radius parallel with the plane of reference
Two points at vertical diameter half radius, by charge-coupled device camera lens to five of silicon chip back side damage field
Position is shot respectively, is then averaged to the count results of five positions, as in one windows area of the monitoring piece
Silicon chip back side damage number, obtain silicon chip back side damage number again divided by microscope windows area, obtain the monitoring piece
Silicon chip back side damages density value.
4. a kind of method that silicon chip back side damaging layer counts automatically according to claim 1, it is characterised in that: step 2 and
In step 7, microscope brightness of different silicon chip back side damaging layers during microscope photographing is all the same.
5. a kind of method that silicon chip back side damaging layer counts automatically according to claim 1, it is characterised in that: step 5
In, multiple silicon chip back side damaging layers of selection are different densities silicon chip back side damaging layer.
6. a kind of method that silicon chip back side damaging layer counts automatically according to claim 5, it is characterised in that: different densities
It is 110 groups that silicon chip back side, which damages layer number,.
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| CN201910655466.8A CN110533149B (en) | 2019-07-19 | 2019-07-19 | Method for automatically counting damaged layers on back of silicon wafer |
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| CN201910655466.8A CN110533149B (en) | 2019-07-19 | 2019-07-19 | Method for automatically counting damaged layers on back of silicon wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116958714A (en) * | 2023-09-20 | 2023-10-27 | 信熙缘(江苏)智能科技有限公司 | Automatic identification method for wafer back damage defect |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110533149B (en) | 2021-08-06 |
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