CN110532677B - Gold belt interconnection structure key parameter value interval determination method facing electromagnetic transmission - Google Patents
Gold belt interconnection structure key parameter value interval determination method facing electromagnetic transmission Download PDFInfo
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Abstract
The invention discloses a gold belt interconnection structure key parameter value interval determining method facing electromagnetic transmission, which comprises the steps of determining a gold belt interconnection structure geometric parameter, a physical property parameter and an electromagnetic transmission parameter; carrying out parametric representation on the gold strip interconnection structure considering process variation, and establishing a gold strip interconnection structure-electromagnetic analysis model; designing an orthogonal test of the process variation parameters and the electrical performance indexes of the gold belt interconnection structure, and carrying out horizontal optimization on the variation parameters; orthogonal tests of interactive gold strip interconnection structure process variation parameters and electrical performance indexes, key parameter identification and key degree calculation are designed and considered, and key parameter value intervals of the gold strip interconnection structure are determined. The method can guide the design and optimization of the high-performance microwave assembly in consideration of the process and the manufacturing conditions, and improve the development quality of the high-performance microwave product.
Description
Technical Field
The invention belongs to the technical field of microwave radio frequency circuits, and particularly relates to a method for determining key parameter value intervals of a gold-band interconnection structure for electromagnetic transmission, which can be used for guiding module interconnection design and electromagnetic transmission performance regulation in a microwave assembly.
Background
Modern electronic and information technology is rapidly developed, and in the aspect of basic research, radio frequency microwave components and circuits are widely applied to high-tech fields such as internet of things communication, target identification and tracking, space navigation and detection and other aerospace fields. With the progress of science and technology, the development of microwave electronic equipment has the characteristics of high integration level, high reliability, high information transmission rate and small size, a microwave component is used as a core component of the microwave electronic equipment, and the development level of the microwave component becomes a key factor for improving the overall performance of the microwave electronic equipment.
In a high-frequency active microwave component, the interconnection structure and structural change between module circuits can affect the signal transmission performance, and the influence degree is sharply increased along with the increase of the transmission frequency, even the circuit and the component are failed. The interconnection structure in the microwave module not only maintains high-quality transmission signals, but also ensures the reliability of circuit connection under the action of environmental load, so that the interconnection structure is required to perform certain structural parameter process changes under the condition of meeting basic electrical performance indexes so as to improve the mechanical reliability. Similarly, for an interconnection structure with the electrical property reaching the standard, process adjustment is often required for parameters of the interconnection structure in the face of different working condition requirements, the change of an interconnection process and a manufacturing method can cause the parameter change of the interconnection structure, and process disturbance in the process manufacturing process can also cause the parameter error of the interconnection structure. Therefore, it is necessary to deeply research a method for determining a value interval of a key parameter of a gold strip interconnection structure facing electromagnetic transmission.
At present, the determination of the value range of the key parameter of the interconnection structure in the microwave component is rarely seen in theoretical and technical research. In engineering, research mostly stays on artificial experience and simulation of a large number of structural electromagnetic software, and the method is high in working cost, low in efficiency and poor in effect. Therefore, the method for determining the key parameter value interval of the gold-strip interconnection structure facing electromagnetic transmission is deeply researched for typical coaxial and microstrip interconnection structures in a microwave assembly, the gold-strip interconnection structure is parameterized, quantitatively and accurately characterized, an interconnection structure-electromagnetic analysis model considering process variation is established, key identification and key degree calculation of the interconnection structure are broken through, and the key parameter value interval of the interconnection structure is given. The method provides theoretical guidance for engineering designers in the aspects of design optimization and transmission performance regulation and control of the microwave assembly in consideration of process and manufacturing conditions, and improves the development level of high-frequency active microwave products.
Disclosure of Invention
In order to solve the problems, the invention provides a gold strap interconnection structure key parameter value interval determination method facing electromagnetic transmission, so as to quickly and accurately determine a gold strap interconnection structure key parameter process variable interval meeting the electrical performance index requirements, and provide theoretical guidance for design and optimization of a high-performance microwave assembly considering process and manufacturing conditions and regulation and control of electrical performance in a complex environment.
The technical solution for achieving the object of the present invention is a method for determining a key parameter value range of a gold-strip interconnection structure facing electromagnetic transmission, comprising the following steps:
(1) determining geometric parameters and physical parameters of a gold strip interconnection structure according to the specific requirements of interconnection in the high-frequency microwave assembly;
(2) determining gold strip interconnection electromagnetic transmission parameters in the microwave assembly according to interconnection working conditions and performance indexes in the microwave assembly;
(3) according to the actual research of the interconnection structure engineering in the microwave assembly, carrying out parameterized representation on the gold strip interconnection structure considering process variation;
(4) establishing a gold belt interconnection structure-electromagnetic analysis model with process variation as a parameter variable according to the determined geometric parameters, physical parameters and structural parametric representation of the gold belt interconnection structure in the microwave assembly;
(5) determining factors, levels and indexes according to gold ribbon interconnection structure parameters and electrical performance evaluation indexes in the microwave assembly, and designing an orthogonal test of gold ribbon interconnection structure process variation parameters and electrical performance indexes;
(6) according to the orthogonal test range analysis result, carrying out horizontal optimization on the process variation parameters of the gold strip interconnection structure;
(7) designing an orthogonal test considering the process variation parameters and the electrical performance indexes of the gold belt interconnection structure with interaction according to the optimized parameter level;
(8) identifying key parameters of the process variation of the gold-strip interconnection structure and calculating the key degree according to the results of the analysis of variance and the range of the orthogonal test considering the interaction;
(9) and determining a key parameter value interval of the gold belt interconnection structure according to the determined key parameters and the corresponding key degree of the gold belt interconnection structure.
Further, in the step (1), determining parameters of a gold strip interconnection structure in the microwave assembly, which comprises the following steps:
determining the geometric parameter includes: width B of gold belt, thickness T of gold belt and length L of horizontal section of gold belt1Gold belt half span P, gold belt micro-strip bonding length b4The coaxial bonding angle theta of the gold strip, the distance b from the gold strip to the end of the dielectric substrate2Inner conductor diameter d1Distance b from the end of the inner conductor to the gold strip3Head difference g and diameter d of insulating medium2Width W of the conductor stripmThickness H of the conductor strip1Dielectric substrate thickness h2And a module gap S.
Determining the physical property parameter includes: dielectric constant epsilon of dielectric substratesDielectric substrate loss tangent thetasDielectric constant ε of glassgAnd glass dielectric loss tangent thetag。
Determining electromagnetic transmission parameters of a gold strip interconnection structure in a microwave assembly comprises the following steps: signal transmission frequency f, return loss S11And insertion loss S21And the like.
Further, in the step (3), the parameterized representation of the gold strip interconnection structure considering the process variation is performed according to the following steps:
(3a) according to the actual research of engineering, 6 main parameters of the gold strip interconnection structure considering process variation are determined as follows: drop g + deltag, distance b from gold strip to end of dielectric substrate2+δb2Distance b from the end of the inner conductor to the gold strip3+δb3Gold strip microstrip bonding length b4+δb4Module gap S + delta S and gold belt half span P + delta P;
(3b) according to the actual engineering investigation, setting the process variation parameter as delta X and the process variation intervalIs composed of
WhereinδXIn order to vary the lower bound of the range,
and if the variation is the upper bound, determining that the variation corresponding to 6 process variation parameters of the gold strip interconnection structure is respectively as follows: drop height variation
Gold band to dielectric substrate end distance variation
Variation of distance from end of inner conductor to gold strip
Gold strip microstrip bond length variation
Module gap variation
Half span variation of gold belt
(3c) According to the characteristic analysis of the gold belt interconnection structure, the interconnection structure is divided into four regions, which are respectively: the gold strip coaxial bonding region, the gold strip micro-strip bonding region, the left non-bonding region and the right non-bonding region. And because the gold strip interconnection has a symmetrical structure, the left half is selected for parametric representation.
(3d) According to the analysis of the structural features of the left half side of the gold belt interconnection, a Cartesian rectangular coordinate system is established, and the gold belt interconnection structure is divided into 5 sections: respectively carrying out piecewise function representation on an AB arc segment, a BC straight-line segment, a CD upper parabolic segment, a DE lower parabolic segment and an EF straight-line segment;
(3e) according to the characteristic analysis of the gold ribbon interconnection structure, the gold ribbon interconnection structure is divided into 5 sections for performing piecewise function representation, wherein the piecewise function representation comprises an AB circular arc section representation function of gold ribbon coaxial bonding, a BC straight section representation function of the upper part of a gold ribbon left non-bonding area, a CD upper parabolic section representation function of the gold ribbon left non-bonding area, a DE lower parabolic section representation function of the gold ribbon left non-bonding area and an EF straight section representation function of a gold ribbon micro-strip bonding area.
Further, in the step (4), according to the gold ribbon interconnection geometric parameters and physical parameters in the microwave assembly determined in the step (1), the gold ribbon interconnection electromagnetic transmission parameters in the microwave assembly determined in the step (2), the process variation parameters and variation intervals determined in the step (3) and the parametric representation of the gold ribbon interconnection structure considering the process variation, a gold ribbon interconnection structure-electromagnetic analysis model is established in three-dimensional electromagnetic full-wave simulation analysis software, and the established model is composed of components such as an insulating medium, an inner conductor, a gold ribbon, a micro-strip conductor, a dielectric substrate and the like.
Further, in the step (5), determining factors, levels and indexes, and designing an orthogonal test of the process variation parameters and the electrical performance indexes of the gold-tape interconnection structure according to the following steps:
(5a) selecting a horizontal numerical value of 6 factors and 7 factors at equal intervals for the gold strip interconnection structure considering the process change according to the process change parameters and the change interval of the gold strip interconnection structure;
(5b) determining gold-strip interconnection electromagnetic transmission performance indexes as return loss and insertion loss according to the microwave assembly gold-strip interconnection electromagnetic transmission parameters determined in the step (2);
(5c) design 6-factor 7 horizontal orthography L49(78) Analyzing and designing an orthogonal test of the process variation parameters and the electrical performance indexes of the gold strip interconnection structure by combining three-dimensional electromagnetic full-wave simulation software;
further, in the step (6), preferably, the leveling of the process variation parameter of the gold strip interconnection structure is performed according to the following steps:
(6a) performing range analysis on the orthogonal test result in the step (5), and respectively calculating electrical property extreme values and corresponding levels under all interconnected structure parameters facing return loss RL and insertion loss IL;
(6b) carrying out first level optimization on the process variable parameters of the gold strip interconnection structure, selecting a return loss RL minimum value and an insertion loss IL maximum value as a level optimization single target of the gold strip interconnection signal transmission performance, and determining a total level optimization target function;
(6c) and performing second level optimization on the process variable parameters of the gold strip interconnection structure, selecting the maximum value of return loss RL and the minimum value of insertion loss IL as the optimization target of the transmission performance of the gold strip interconnection signal, and determining a total optimization target function.
Further, in the step (7), designing an orthogonal test considering the process variation parameters and the electrical performance indexes of the gold strip interconnection structure with the interaction is performed according to the following steps:
(7a) selecting single-factor action and first-level interaction between the factors, neglecting the high-level interaction, and determining the effect to be inspected as
And (4) seed preparation.
(7b) Designing a 6-factor 2 horizontal orthogonal table L considering interaction according to the optimized gold strip interconnection structure process variation parameter level in the step (6) and the number of effects to be considered32(231) And designing an orthogonal test considering interactive process variation parameters and electrical performance indexes of the gold belt interconnection structure by combining three-dimensional electromagnetic full-wave simulation software analysis.
Further, in the step (8), the identification of the process variation key parameters and the calculation of the criticality of the gold strip interconnection structure are performed according to the following steps:
(8a) determining a standard for identifying gold belt interconnection structure parameters as key parameters according to an orthogonal test variance analysis result considering interaction;
(8b) according to the standard that the gold belt interconnection structure parameters are identified as key parameters, a certain interaction is specified as the key parameters, and two factors related to the interaction are both the key parameters;
(8c) determining key parameters of the interconnection structure according to the single-factor action and the interaction key parameter identification standard of the gold belt interconnection structure;
(8d) calculating the key degree of parameters of the interconnection structure according to the range analysis result;
(8e) and (4) determining the key parameters and the criticality thereof according to the key parameters determined in the step (8c) and the key criticality of the parameters calculated in the step (8 d).
Further, in the step (9), determining a key parameter value interval of the gold strip interconnection structure is performed according to the following steps:
(9a) according to the determined key parameters and corresponding key degrees of the gold belt interconnection structure, performing electromagnetic full-wave analysis on the process variation of the single key parameter in sequence according to the key degrees;
(9b) according to the analysis in the step (9a), comparing the electromagnetic full wave analysis result of the key parameters of the gold belt interconnection structure in the process variation interval with the performance requirement in engineering, and judging whether the analysis result meets the index requirement;
(9c) and sequentially determining key parameter intervals meeting the index requirements according to the key degree of the interconnection key parameters, wherein the interval is the key parameter value interval of the gold belt interconnection structure.
Compared with the prior art, the invention has the following characteristics:
1. aiming at the gold belt interconnection structure in the microwave assembly, the invention establishes the parameterized representation model of the gold belt interconnection structure for electrical performance considering process variation. Based on the characterization model, the influence relation between the interconnection structure parameter process variation and the interconnection signal transmission performance is researched, the key parameters of the gold-strip interconnection structure are determined, the key degree of the interconnection structure key parameters is calculated, and finally the value range of the interconnection structure key parameters is determined. The difficult problems of interconnection design and optimization of the high-performance microwave assembly under the consideration of process and manufacturing conditions are solved.
2. By using the method for determining the key parameter value interval of the gold-strip interconnection structure facing electromagnetic transmission, parameterized, quantitative and accurate representation of the interconnection structure can be realized in the design, manufacture and use processes of the microwave assembly, the key parameter value interval of the interconnection structure is quickly given, and theoretical guidance is provided for engineering designers in the aspects of module interconnection design and transmission performance regulation and control in the microwave assembly under the condition of considering process variation, so that the working efficiency is improved, the product development cost is reduced, and the service performance of the product is guaranteed.
Drawings
FIG. 1 is a flow chart of a method for determining key parameter value intervals of a gold-strip interconnection structure facing electromagnetic transmission according to the invention;
FIG. 2 is a schematic diagram of a gold strap interconnection parameterized model taking into account process variations;
FIG. 3 is a schematic representation of a golden ribbon interconnected subsegment;
FIG. 4 is a gold ribbon interconnect structure-electromagnetic analysis model with process variation as a parametric variable;
FIG. 5 is a graph of the trend of the process variation 6 factor 7 level and the return loss S11 index for the gold strap interconnect structure;
FIG. 6 is a graph of the trend of the process variation 6 factor 7 level and the insertion loss S21 index for the gold strap interconnect structure;
FIG. 7 is a graph of the trend of the S11 index for the return loss and the factor 2 level of the process variation 21 of the gold strap interconnect structure;
fig. 8 is a graph of the trend of the factor 2 level of process variation 21 and the insertion loss S21 index of the gold strap interconnect structure.
Detailed Description
The invention is further explained below with reference to the drawings and the embodiments.
Referring to fig. 1, the invention relates to a method for determining a key parameter value interval of a gold strip interconnection structure facing electromagnetic transmission, which comprises the following specific steps:
Referring to fig. 2, the gold strap interconnection in the high frequency microwave module includes a ground plate 1, a dielectric substrate 2 connected to an upper layer of the ground plate 1, a conductor strap 3 connected to the dielectric substrate 2 connected to an inner conductor 5 through a gold strap 6, and the inner conductor 5 connected to an insulating dielectric 4. And respectively determining the geometrical parameters and physical parameters of the gold ribbon interconnection in the microwave assembly according to the specific requirements of interconnection in the high-frequency microwave assembly.
Determining the geometric parameter includes: width B of gold belt, thickness T of gold belt and length L of horizontal section of gold belt1Gold belt half span P, gold belt micro-strip bonding length b4The coaxial bonding angle theta of the gold strip, the distance b from the gold strip to the end of the dielectric substrate2Inner conductor diameter d1Distance b from the end of the inner conductor to the gold strip3Head difference g and diameter d of insulating medium2Width W of the conductor stripmThickness H of the conductor strip1Dielectric substrate thickness h2And a module gap S.
Determining the physical property parameter includes: dielectric constant epsilon of dielectric substratesDielectric substrate loss tangent thetasDielectric constant ε of glassgAnd glass dielectric loss tangent thetag。
Determining transmission parameters of a gold-strip interconnection electromagnetic structure in a microwave assembly, specifically comprising: signal transmission frequency f, return loss S11And insertion loss S21And the like.
According to the practical research of the interconnection structure engineering in the microwave assembly, the gold strip interconnection structure considering the process variation is parameterized and characterized, and referring to fig. 3, the method comprises the following steps:
(3a) according to the actual research of engineering, 6 main parameters of the gold strip interconnection structure considering process variation are determined as follows: drop g + deltag, distance b from gold strip to end of dielectric substrate2+δb2Distance b from the end of the inner conductor to the gold strip3+δb3Gold strip microstrip bonding length b4+δb4Module gap S + delta S and gold belt half span P + delta P;
(3b) according to the actual engineering investigation, the process variation parameter is set to be delta X, and the process variation interval is set to be
WhereinδXIn order to vary the lower bound of the range,
and if the variation is the upper bound, determining that the variation corresponding to 6 process variation parameters of the gold strip interconnection structure is respectively as follows: drop height variation
Gold band to dielectric substrate end distance variation
Variation of distance from end of inner conductor to gold strip
Gold strip microstrip bond length variation
Module gap variation
Half span variation of gold belt
(3c) According to the characteristic analysis of the gold belt interconnection structure, the interconnection structure is divided into four regions, which are respectively: the gold strip coaxial bonding region, the gold strip micro-strip bonding region, the left non-bonding region and the right non-bonding region. Because the gold strip interconnection has a symmetrical structure, the left half is selected for parametric representation;
(3d) according to the analysis of the structural features of the left half side of the gold belt interconnection, a Cartesian rectangular coordinate system is established, and the gold belt interconnection structure is divided into 5 sections: and respectively carrying out piecewise function representation on the AB circular arc segment, the BC straight-line segment, the CD upper parabolic segment, the DE lower parabolic segment and the EF straight-line segment. Let the intermediate variable:
(3e) according to the characteristic analysis of the gold belt interconnection structure, the gold belt interconnection structure is divided into 5 sections for carrying out piecewise function representation, wherein the gold belt coaxial bonding AB arc section representation function is as follows:
the characterization function of the BC straight line segment at the upper part of the left non-bonding area of the gold strip is as follows:
the characterization function of the parabolic segment on the left non-bonding region CD of the gold band is:
the parabolic section characterization function under the left non-bonding region DE of the gold strip is:
the characterization function of the EF straight line segment of the gold-strip microstrip bonding region is as follows:
And establishing a gold belt interconnection structure-electromagnetic analysis model with process variation as a parameter variable according to the determined geometric parameters, physical parameters and structure parametric representation of the gold belt interconnection structure in the microwave assembly and by referring to fig. 4. Establishing a gold strip interconnection structure-electromagnetic analysis model in three-dimensional electromagnetic full-wave simulation analysis software according to the gold strip interconnection geometric parameters and physical parameters in the microwave assembly determined in the step (1), the gold strip interconnection electromagnetic transmission parameters in the microwave assembly determined in the step (2), the process variation parameters and variation intervals determined in the step (3) and the parameterized representation of the gold strip interconnection structure considering the process variation, wherein the established model comprises components such as an insulating medium, an inner conductor, a gold strip, a micro-strip conductor, a dielectric substrate and the like.
Determining factors, levels and indexes according to gold ribbon interconnection structure parameters and electrical performance evaluation indexes in the microwave assembly, designing an orthogonal test of gold ribbon interconnection structure process variation parameters and electrical performance indexes, and performing the following steps:
(5a) according to the process variation parameters and the variation interval of the gold strip interconnection structure, selecting the level numerical values of 6 factors and 7 factors at equal intervals for the gold strip interconnection structure considering the process variation as follows:
wherein, (g + δ g)v1～(g+δg)v7Taking a value of 7 for the fall, (b)2+δb2)v1～(b2+δb2)v7The distance from the gold strip to the end of the dielectric substrate was taken to be 7 levels, (b)3+δb3)v1～(b3+δb3)v7Taking a value of 7 for the distance from the end of the inner conductor to the gold strip, (b)4+δb4)v1～(b4+δb4)v7The length of the gold-strip microstrip bonding takes 7 horizontal values, (S + delta S)v1～(S+δS)v7Taking 7 horizontal values for module clearance, (P + delta P)v1～(P+δP)v7The value of 7 levels was taken for the gold band half span.
The factor level calculation formula in the table is:
wherein j is a factor number, m is a horizontal number,
for factor j corresponding to the m horizontal parameter value, XjFor the value of the j-th factor parameter, jδXfor the lower bound of the j-th factor parameter value variation,
an upper bound for the jth factor parameter value variation;
(5b) determining gold belt interconnection electromagnetic transmission performance indexes as return loss and insertion loss according to the microwave assembly gold belt interconnection electromagnetic transmission parameters determined in the step (2): i isEP＝[S11 S21]；
(5c) Design 6-factor 7 horizontal orthography L49(78) And analyzing and designing orthogonal tests of the process variation parameters and the electrical performance indexes of the gold strip interconnection structure by combining three-dimensional electromagnetic full-wave simulation software.
According to the results of orthogonal test range analysis, the process variation parameters of the gold strip interconnection structure are horizontally optimized, and referring to fig. 5 and 6, the method comprises the following steps:
(6a) performing range analysis on the orthogonal test result in the step (5), and respectively calculating electrical property extreme values and corresponding levels under all interconnected structure parameters facing return loss RL and insertion loss IL;
(6b) carrying out first level optimization on the process variable parameters of the gold strip interconnection structure, selecting a return loss RL minimum value and an insertion loss IL maximum value as a level optimization single target of the gold strip interconnection signal transmission performance, and determining a total level optimization target function as follows:
maxφ(Xs1) Xs1∈Q
in the formula, Xs1Preference of parameter combinations for the first level, XdFor designing the parameter combination, Q is preferably horizontalSet of single object parameter sets, wRLIs a return loss weight coefficient, wILIs the insertion loss weight coefficient;
(6c) carrying out second level optimization on the process variable parameters of the gold strip interconnection structure, selecting the maximum value of return loss RL and the minimum value of insertion loss IL as the optimization target of the transmission performance of the gold strip interconnection signal, and determining the overall optimization target function as follows:
minφ(Xs2) Xs2∈Q
in the formula, Xs2A combination of parameters is preferred for the second level.
Designing an orthogonal test considering the process variation parameters and the electrical performance indexes of the gold strip interconnection structure with interaction according to the optimized parameter level, and performing the following steps:
(7a) according to the general rule of the factor action, the single factor action has large influence, the factor interaction has gradually reduced influence along with the increase of the stage number, the single factor action and the first-stage interaction between the factors are selected, and the high-stage interaction is ignored, so that the effect to be investigated is determined to be
Seed growing;
(7b) designing a 6-factor 2 horizontal orthogonal table L considering interaction according to the optimized gold strip interconnection structure process variation parameter level in the step (6) and the number of effects to be considered32(231) And designing an orthogonal test considering interactive process variation parameters and electrical performance indexes of the gold belt interconnection structure by combining three-dimensional electromagnetic full-wave simulation software analysis.
Step 8, identifying key parameters of process change of the gold belt interconnection structure and calculating the key degree
According to the results of the cross-over test variance analysis and range analysis considering the interaction, the key parameter identification and the key degree calculation of the gold strip interconnection structure process variation are carried out, and referring to fig. 7 and 8, the method comprises the following steps:
(8a) according to the analysis result of the variance of the orthogonal test considering the interaction, the standard for identifying the parameters of the gold strip interconnection structure as the key parameters is determined as follows:
in the above formula, the first and second carbon atoms are,
for the j-th parameter facing return loss S11 corresponding to the ratio of the index mean square sum and the error mean square sum,
for the j-th parameter oriented to insertion loss S21 corresponding to the ratio of the index mean square sum and the error mean square sum,
for degree of freedom f according to parameters facing return loss S11jAnd degree of freedom of error feAnd combining the F distribution and the critical value determined by alpha quantile,
according to a parameter, degree of freedom f, for insertion loss S21jAnd degree of freedom of error feAnd combining the F distribution and the alpha quantile, determining a threshold value, w1And w2Respectively corresponding weight coefficients;
(8b) according to the standard that the gold belt interconnection structure parameters are identified as key parameters, a certain interaction is specified as the key parameters, and two factors related to the interaction are both the key parameters;
(8c) determining the key parameters of the interconnection structure as follows according to the single-factor action and the key interaction parameter identification standard of the gold belt interconnection structure:
Parkey＝Parkey(X)∪X1(Parkey(X1X2))∪X2(Parkey(X1X2))
in the above formula, ParkeyAs a single factor key parameter, Parkey(X1X2) For interaction key parameters, X represents a single factor, X1X2Being a factor first order interaction term, X1Being the first factor in the interactive item, X2Is the second factor in the interactive item;
(8d) calculating the key degree of parameters of the interconnection structure according to the range analysis result as follows:
in the above formula, the first and second carbon atoms are,
for the very poor value of the j-th parameter facing return loss S11,
a j-th parameter extreme difference value facing the insertion loss S21, and v is a parameter serial number;
(8e) and (4) determining the key parameters and the criticality thereof according to the key parameters determined in the step (8c) and the key criticality of the parameters calculated in the step (8 d).
Step 9, determining key parameter value intervals of the gold belt interconnection structure
Determining a key parameter value interval of the gold belt interconnection structure according to the determined key parameters and the corresponding criticality of the gold belt interconnection structure, and performing the following steps:
(9a) according to the determined key parameters and corresponding key degrees of the gold belt interconnection structure, performing electromagnetic full-wave analysis on the process variation of the single key parameter in sequence according to the key degrees;
(9b) according to the analysis in the step (9a), comparing the electromagnetic full wave analysis result of the key parameters of the gold belt interconnection structure in the process variation interval with the performance requirement in engineering, and judging whether the analysis result meets the index requirement;
(9c) and sequentially determining key parameter intervals meeting the index requirements according to the key degree of the interconnection key parameters, wherein the interval is the key parameter value interval of the gold belt interconnection structure.
The advantages of the present invention can be further illustrated by the following example calculations:
firstly, determining the geometric parameters and physical parameters of gold belt interconnection
In the experiment, a Ku waveband active phased array antenna T/R assembly is taken as an example, the influence of the process variation of the parameters of the interconnection structure on the microwave transmission performance of a circuit is researched when the process variation of the interconnection structure in the T/R assembly is researched, and the method for determining the value interval of the key parameters of the interconnection structure for microwave electrical performance transmission is researched. In order to simplify analysis, a typical coaxial circuit and microstrip circuit conversion structure in the T/R assembly is selected, and a shape correlation mechanism of gold strip interconnection influenced by process variation is explored. The diagram of a parameterized model of the gold ribbon interconnection structure considering process variation is shown in FIG. 2, and the geometric parameters and physical parameters of gold ribbon interconnection are shown in Table 1.
Table 1 geometrical and physical parameters of gold ribbon interconnection
II, carrying out horizontal optimization on process variation parameters of the gold strip interconnection structure
1. Determining gold strip interconnection electromagnetic transmission parameters in microwave assembly
Determining electromagnetic transmission parameters of a gold strip interconnection structure in a microwave assembly, specifically comprising: the central frequency f of signal transmission is 15GHz, and the return loss index requires S11Less than or equal to-15 dB, and the insertion loss index requires S21Not less than-0.2 dB, etc. 2. Establishing a gold belt interconnection structure-electromagnetic analysis model with process variation as parameter variable
According to the actual research of engineering, the following table 2 shows the 6 characteristic parameters and the process variation intervals of the gold strip interconnection structure considering the process variation. According to the gold belt interconnection geometric parameters, physical parameters, electromagnetic transmission parameters and interconnection structure parametric representation considering process variation in the T/R assembly, a gold belt interconnection structure-electromagnetic analysis model taking the process variation parameters as variable regulation and control parameters is established in three-dimensional electromagnetic full-wave simulation analysis software as shown in figure 4, and the established model comprises components such as an insulating medium, an inner conductor, a gold belt, a micro-strip conductor, a dielectric substrate and the like.
TABLE 2 gold strip interconnection Process variation characterization quantity and variation interval
3. Orthogonal test for designing process variation parameters and electrical performance indexes of gold strip interconnection structure
According to the determined actual investigation of the gold strip interconnection process variation, 6 characterization parameters of the process variation are used as design variables, interconnection design values are used as design initial values, a process variation interval is used as a design space, 6-factor 7 horizontal numerical values with equal intervals are selected for a gold strip interconnection structure, and a 6-factor 7 horizontal orthogonal table L is designed49(78). And (3) analyzing and designing an orthogonal test of the gold belt interconnection structure parameters considering process variation and the electromagnetic transmission performance indexes by taking return loss and insertion loss as the electromagnetic transmission performance indexes and combining three-dimensional electromagnetic full-wave simulation software.
4. Carrying out horizontal optimization on process variation parameters of gold strip interconnection structure
And (4) performing range analysis on the orthogonal test result, and respectively calculating electrical property extreme values and corresponding levels under all the interconnected structure parameters facing the return loss RL and the insertion loss IL.
The first level is preferably
Selecting a return loss RL minimum value and an insertion loss IL maximum value as a level optimal single target of the gold strip interconnection signal transmission performance, and determining an overall level optimal target function as follows:
maxφ(Xs1) Xs1∈Q
according to the requirements of microwave field for signal transmission performanceFinding w with equal weight of insertion loss and voltage standing wave ratioRL＝wIL＝1。
Selecting S11 the minimum value corresponding to the parameter level set
Selecting the set of parameter levels corresponding to the maximum value of S21, then
The overall level is preferably compared to the objective function,
then, the overall level is preferably
Parameter level set, Xs1＝[1 1 6 7 1 1]
The second level is preferably
Selecting the maximum value of return loss RL and the minimum value of insertion loss IL as the optimization target of the transmission performance of the gold-strip interconnection signal, and determining the overall optimization target function as follows:
minφ(Xs2) Xs2∈Q
selecting the set of parameter levels corresponding to the maximum value of S11, then
Selecting S21 the minimum value corresponding to the parameter level set
The overall level is preferably compared to the objective function,
the overall level is preferably
Parameter level set, Xs2＝[7 7 3 3 7 6]
The final two levels identified as preferred are shown in table 3 below.
TABLE 3 optimized level of process variation parameters for gold ribbon interconnect structure
Thirdly, determining key parameter value interval of gold belt interconnection structure
1. Orthogonal test for designing process variation parameters and electrical performance indexes of gold strip interconnection structure considering interaction
Selecting single-factor action and first-level interaction among factors, neglecting high-level interaction, and designing a 6-factor 2 horizontal orthogonal table L considering interaction32(231) And designing an orthogonal test considering interactive process variation parameters and electrical performance indexes of the gold belt interconnection structure by combining three-dimensional electromagnetic full-wave simulation software analysis.
2. Key parameter identification and key degree calculation of gold belt interconnection structure process variation
According to the analysis result of the variance of the orthogonal test considering the interaction, the standard for identifying the parameters of the gold strip interconnection structure as the key parameters is determined as follows:
in the above formula, take w1＝w2＝1，
According to the identification standard of the single-factor action and the interaction key parameter of the gold belt interconnection structure, the interconnection structure key parameter is determined to be:
Parkey＝Parkey(X)∪X1(Parkey(X1X2))∪X2(Parkey(X1X2))＝[g b2 S P]
calculating the key degree of key parameters of the interconnection structure according to the range analysis result as follows:
3. determining key parameter value interval of gold belt interconnection structure
(1) According to the result, the key parameters of the interconnection structure are sorted according to the key degree:
b2＞g＞P＞S
(2) and (4) sequentially carrying out electromagnetic full-wave analysis on the process variation of the single key parameter according to the key parameter sequence.
(3) The electromagnetic full wave analysis result of the key parameters of the gold belt interconnection structure in the process variation range and the return loss index S of the performance requirement in the engineering11Less than or equal to-15 dB, insertion loss index S21And comparing the result with more than or equal to-0.2 dB, and judging whether the analysis result meets the index requirement.
(4) Key parameter intervals meeting the index requirements are sequentially determined, and the parameter sweeping results of the key parameters in the process variation range are shown in the following table 4.
TABLE 4 Scan results of key parameters over the process variation range
Finally, the key parameter value interval of the gold strip interconnection structure for the electrical performance of the microwave component is determined as shown in the following table 5.
TABLE 5 gold band interconnection Ku frequency band key parameter value interval
The present invention is not limited to the above-mentioned embodiments, and based on the technical solutions disclosed in the present invention, those skilled in the art can make some substitutions and modifications to some technical features without creative efforts according to the disclosed technical contents, and these substitutions and modifications are all within the protection scope of the present invention.
Claims (9)
1. A gold belt interconnection structure key parameter value interval determination method facing electromagnetic transmission is characterized by comprising the following steps:
(1) determining geometric parameters and physical parameters of a gold strip interconnection structure according to the specific requirements of interconnection in the high-frequency microwave assembly;
(2) determining gold strip interconnection electromagnetic transmission parameters in the microwave assembly according to interconnection working conditions and performance indexes in the microwave assembly;
(3) according to the actual research of the interconnection structure engineering in the microwave assembly, carrying out parameterized representation on the gold strip interconnection structure considering process variation;
the interconnection structure is divided into four regions, which are respectively: the gold strip coaxial bonding region, the gold strip micro-strip bonding region, the left non-bonding region and the right non-bonding region;
dividing the gold strip interconnection structure into 5 sections: respectively carrying out piecewise function representation on an AB arc segment, a BC straight-line segment, a CD upper parabolic segment, a DE lower parabolic segment and an EF straight-line segment;
(4) establishing a gold belt interconnection structure-electromagnetic analysis model with process variation as a parameter variable according to the determined geometric parameters, physical parameters and structural parametric representation of the gold belt interconnection structure in the microwave assembly;
(5) determining factors, levels and indexes according to gold ribbon interconnection structure parameters and electrical performance evaluation indexes in the microwave assembly, and designing an orthogonal test of gold ribbon interconnection structure process variation parameters and electrical performance indexes;
(6) according to the orthogonal test range analysis result, carrying out horizontal optimization on the process variation parameters of the gold strip interconnection structure;
(7) designing an orthogonal test considering the process variation parameters and the electrical performance indexes of the gold belt interconnection structure with interaction according to the optimized parameter level;
(8) identifying key parameters of the process variation of the gold-strip interconnection structure and calculating the key degree according to the results of the analysis of variance and the range of the orthogonal test considering the interaction;
(9) and determining a key parameter value interval of the gold belt interconnection structure according to the determined key parameters and the corresponding key degree of the gold belt interconnection structure.
2. The electromagnetic transmission-oriented gold strip interconnection structure key parameter value interval determination method according to claim 1, wherein in the step (1), determining the gold strip interconnection structure geometric parameters in the microwave component includes: width B of gold belt, thickness T of gold belt and length L of horizontal section of gold belt1Gold belt half span P, gold belt micro-strip bonding length b4The coaxial bonding angle theta of the gold strip, the distance b from the gold strip to the end of the dielectric substrate2Inner conductor diameter d1Distance b from the end of the inner conductor to the gold strip3Head difference g and diameter d of insulating medium2Width W of the conductor stripmThickness H of the conductor strip1Dielectric substrate thickness h2And a module gap S;
determining the physical property parameter includes: dielectric constant epsilon of dielectric substratesDielectric substrate loss tangent thetasDielectric constant ε of glassgAnd glass dielectric loss tangent thetag；
In the step (2), determining electromagnetic transmission parameters of the gold strip interconnection structure in the microwave assembly comprises: signal transmission frequency f, return loss S11, and insertion loss S21.
3. The method for determining key parameter value intervals of the gold strip interconnection structure facing electromagnetic transmission according to claim 2, wherein the step (3) is performed according to the following process:
(3a) according to the actual research of engineering, 6 main parameters of the gold strip interconnection structure considering process variation are determined as follows: drop g + deltag, distance b from gold strip to end of dielectric substrate2+δb2Distance b from the end of the inner conductor to the gold strip3+δb3Gold strip microstrip bonding length b4+δb4Module gap S + delta S and gold belt half span P + delta P;
(3b) according to the actual engineering investigation, the process variation parameter is set to be delta X, and the process variation interval is set to be
Determining that the corresponding variation amounts of 6 process variation parameters of the gold strip interconnection structure are respectively as follows: drop height variation
Gold band to dielectric substrate end distance variation
Variation of distance from end of inner conductor to gold strip
Gold strip microstrip bond length variation
Module gap variation
Half span variation of gold belt
(3c) According to the characteristic analysis of the gold belt interconnection structure, the interconnection structure is divided into four regions, which are respectively: the gold strip coaxial bonding region, the gold strip micro-strip bonding region, the left non-bonding region and the right non-bonding region; because the gold strip interconnection has a symmetrical structure, the left half is selected for parametric representation;
(3d) according to the analysis of the structural features of the left half side of the gold belt interconnection, a Cartesian rectangular coordinate system is established, and the gold belt interconnection structure is divided into 5 sections: respectively carrying out piecewise function representation on an AB arc segment, a BC straight-line segment, a CD upper parabolic segment, a DE lower parabolic segment and an EF straight-line segment; let the intermediate variable:
(3e) according to the characteristic analysis of the gold belt interconnection structure, the gold belt interconnection structure is divided into 5 sections for carrying out piecewise function representation, wherein the gold belt coaxial bonding AB arc section representation function is as follows:
the characterization function of the BC straight line segment at the upper part of the left non-bonding area of the gold strip is as follows:
the characterization function of the parabolic segment on the left non-bonding region CD of the gold band is:
the parabolic section characterization function under the left non-bonding region DE of the gold strip is:
the characterization function of the EF straight line segment of the gold-strip microstrip bonding region is as follows:
4. the method for determining the key parameter value interval of the gold ribbon interconnection structure facing electromagnetic transmission according to claim 1, wherein in the step (4), a gold ribbon interconnection structure-electromagnetic analysis model is established in three-dimensional electromagnetic full-wave simulation analysis software according to the gold ribbon interconnection geometric parameters and physical parameters in the microwave assembly determined in the step (1), the gold ribbon interconnection electromagnetic transmission parameters in the microwave assembly determined in the step (2), the process variation parameters and variation intervals determined in the step (3) and the parameterized characterization of the gold ribbon interconnection structure considering process variation, wherein the established model comprises an insulating medium, an inner conductor, a gold ribbon, a microstrip conductor and a dielectric substrate.
5. The method for determining key parameter value intervals of the gold strip interconnection structure facing electromagnetic transmission according to claim 1, wherein the step (5) is performed according to the following process:
(5a) according to the process variation parameters and the variation interval of the gold strip interconnection structure, selecting the level numerical values of 6 factors and 7 factors at equal intervals for the gold strip interconnection structure considering the process variation as follows:
wherein, (g + δ g)v1～(g+δg)v7Taking a value of 7 for the fall, (b)2+δb2)v1～(b2+δb2)v7The distance from the gold strip to the end of the dielectric substrate was taken to be 7 levels, (b)3+δb3)v1～(b3+δb3)v7Taking a value of 7 for the distance from the end of the inner conductor to the gold strip, (b)4+δb4)v1～(b4+δb4)v7The length of the gold-strip microstrip bonding takes 7 horizontal values, (S + delta S)v1～(S+δS)v7Taking 7 horizontal values for module clearance, (P + delta P)v1～(P+δP)v7Taking a horizontal value of 7 for the half span of the gold belt;
the factor level calculation formula in the table is:
wherein j is a factor number, m is a horizontal number,
for factor j corresponding to the m horizontal parameter value, XjFor the value of the j-th factor parameter, jδXfor the lower bound of the j-th factor parameter value variation,
an upper bound for the jth factor parameter value variation;
(5b) determining gold belt interconnection electromagnetic transmission performance indexes as return loss and insertion loss according to the microwave assembly gold belt interconnection electromagnetic transmission parameters determined in the step (2): i isEP＝[S11 S21]；
(5c) Design 6-factor 7 horizontal orthography L49(78) And analyzing and designing orthogonal tests of the process variation parameters and the electrical performance indexes of the gold strip interconnection structure by combining three-dimensional electromagnetic full-wave simulation software.
6. The method for determining key parameter value intervals of the gold strip interconnection structure facing electromagnetic transmission according to claim 1, wherein the step (6) is performed according to the following process:
(6a) performing range analysis on the orthogonal test result in the step (5), and respectively calculating electrical property extreme values and corresponding levels under all interconnected structure parameters facing return loss RL and insertion loss IL;
(6b) carrying out first level optimization on the process variable parameters of the gold strip interconnection structure, selecting a return loss RL minimum value and an insertion loss IL maximum value as a level optimization single target of the gold strip interconnection signal transmission performance, and determining a total level optimization target function as follows:
maxφ(Xs1)Xs1∈Q
in the formula, Xs1Preference of parameter combinations for the first level, XdFor designing a parameter combination, Q is a horizontal preferred set of single target parameters, wRLIs a return loss weight coefficient, wILIs the insertion loss weight coefficient;
(6c) carrying out second level optimization on the process variable parameters of the gold strip interconnection structure, selecting the maximum value of return loss RL and the minimum value of insertion loss IL as the optimization target of the transmission performance of the gold strip interconnection signal, and determining the overall optimization target function as follows:
minφ(Xs2)Xs2∈Q
in the formula, Xs2A combination of parameters is preferred for the second level.
7. The method for determining key parameter value intervals of the gold strip interconnection structure facing electromagnetic transmission according to claim 1, wherein the step (7) is performed according to the following process:
(7a) selecting single-factor action and first-level interaction between the factors, neglecting the high-level interaction, and determining the effect to be inspected as
Seed growing;
(7b) designing a 6-factor 2 horizontal orthogonal table L considering interaction according to the optimized gold strip interconnection structure process variation parameter level in the step (6) and the number of effects to be considered32(231) And designing an orthogonal test considering interactive process variation parameters and electrical performance indexes of the gold belt interconnection structure by combining three-dimensional electromagnetic full-wave simulation software analysis.
8. The method for determining key parameter value intervals of the gold strip interconnection structure facing electromagnetic transmission according to claim 1, wherein the step (8) is performed according to the following process:
(8a) according to the analysis result of the variance of the orthogonal test considering the interaction, the standard for identifying the parameters of the gold strip interconnection structure as the key parameters is determined as follows:
in the above formula, the first and second carbon atoms are,
for the j-th parameter facing return loss S11 corresponding to the ratio of the index mean square sum and the error mean square sum,
for the j-th parameter oriented to insertion loss S21 corresponding to the ratio of the index mean square sum and the error mean square sum,
for degree of freedom f according to parameters facing return loss S11jAnd degree of freedom of error feAnd combining the F distribution and the critical value determined by alpha quantile,
according to a parameter, degree of freedom f, for insertion loss S21jAnd degree of freedom of error feIn combination with F distribution and alpha quantileNumber, determined critical value, w1And w2Respectively corresponding weight coefficients;
(8b) according to the standard that the gold belt interconnection structure parameters are identified as key parameters, a certain interaction is specified as the key parameters, and two factors related to the interaction are both the key parameters;
(8c) determining the key parameters of the interconnection structure as follows according to the single-factor action and the key interaction parameter identification standard of the gold belt interconnection structure:
Parkey＝Parkey(X)∪X1(Parkey(X1X2))∪X2(Parkey(X1X2))
in the above formula, ParkeyAs a single factor key parameter, Parkey(X1X2) For interaction key parameters, X represents a single factor, X1X2Being a factor first order interaction term, X1Being the first factor in the interactive item, X2Is the second factor in the interactive item;
(8d) calculating the key degree of parameters of the interconnection structure according to the range analysis result as follows:
in the above formula, the first and second carbon atoms are,
for the very poor value of the j-th parameter facing return loss S11,
a j-th parameter extreme difference value facing the insertion loss S21, and v is a parameter serial number;
(8e) and (4) determining the key parameters and the criticality thereof according to the key parameters determined in the step (8c) and the key criticality of the parameters calculated in the step (8 d).
9. The method for determining key parameter value intervals of the gold strip interconnection structure facing electromagnetic transmission according to claim 1, wherein the step (9) is performed according to the following process:
(9a) according to the determined key parameters and corresponding key degrees of the gold belt interconnection structure, performing electromagnetic full-wave analysis on the process variation of the single key parameter in sequence according to the key degrees;
(9b) according to the analysis in the step (9a), comparing the electromagnetic full wave analysis result of the key parameters of the gold belt interconnection structure in the process variation interval with the performance requirement in engineering, and judging whether the analysis result meets the index requirement;
(9c) and sequentially determining key parameter intervals meeting the index requirements according to the key degree of the interconnection key parameters, wherein the interval is the key parameter value interval of the gold belt interconnection structure.
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