CN110520974A - 半导体装置以及电力转换装置及半导体装置的制造方法 - Google Patents

半导体装置以及电力转换装置及半导体装置的制造方法 Download PDF

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Publication number
CN110520974A
CN110520974A CN201880021844.0A CN201880021844A CN110520974A CN 110520974 A CN110520974 A CN 110520974A CN 201880021844 A CN201880021844 A CN 201880021844A CN 110520974 A CN110520974 A CN 110520974A
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semiconductor device
grafting material
metal
particle
gap
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CN201880021844.0A
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巽裕章
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Mitsubishi Corp
Mitsubishi Electric Corp
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Mitsubishi Corp
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
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Abstract

向半导体元件或导体部件中的任意一方之上供给包括包含第一金属的第一粒子、包含熔点比所述第一金属低的第二金属的第二粒子和填充树脂的接合材料，在供给的所述接合材料的表面形成空隙。在形成有所述空隙的所述接合材料之上载置并按压所述导体部件或者所述半导体元件中的任意另一方，使偏分布于所述接合材料的表面的所述填充树脂移动至所述空隙，在接合温度下进行加热。据此，能够抑制填充树脂的偏分布，并通过利用包含第一金属和第二金属的金属间化合物使第一粒子彼此结合的连接构造将半导体元件和导体部件可靠地接合，能够得到接合可靠性高的半导体装置。

Description

半导体装置以及电力转换装置及半导体装置的制造方法
技术领域
本发明涉及将半导体元件与导体部件伴随着电导通而连接的半导体装置。
背景技术
在用于马达的逆变器控制等的电力转换用半导体装置搭载有IGBT、二极管、MOSFET等纵型半导体元件。在所述半导体元件的表面及背面形成有通过金属化形成的电极，在一般的半导体装置的情况下，所述半导体元件的背面电极与电路基板经由焊料接合部而连接的情况较多。
用于这样的功率模块的接合材料由于存在半导体元件的发热量增大的倾向而期望具有高耐热性能。即，需要高熔点的接合部。然而，目前还未发现无铅且具有高耐热性能的焊料材料。另外，作为替代手段将银等的超微粒子烧结以完成接合的烧结接合技术的开发正在推进，但是由于在接合工序中需要以将半导体元件向基板按压的方式施加压力，因此存在对元件造成损伤、污染这样的问题，由此在生产率方面存在大的课题就是现状。
在这种情况下，代替上述的焊料接合技术、烧结接合技术，正在研究液相扩散接合(Transient Liquid Phase Bonding，TLP接合)。在该接合技术中，使用了包括在接合温度下熔融的低熔点金属粒子和在所述接合温度下不熔融的高熔点金属粒子的接合材料。当在接合温度下加热上述的接合材料时，低熔点金属粒子熔融而在高熔点金属粒子的表面浸湿展开并接触高熔点金属粒子的表面，从而两者相互进行反应。其结果，形成了具有比接合温度高的熔点的金属间化合物，得到了利用该金属间化合物而高熔点金属粒子彼此结合的构造的接合部。据此，能够得到即使再次暴露于接合温度下也不会再熔融的高熔点的接合部。
在专利文献1中记载有作为低熔点金属粒子以及高熔点金属粒子，分别使用了Sn粒子和Cu粒子的材料。通过在接合温度下进行加热，Sn粒子熔融而在Cu粒子的表面浸湿展开并接触，从而相互反应，形成通过包含Cu6Sn5的金属间化合物而Cu粒子彼此结合的构造。据此，得到了包括高熔点的Cu粒子和包含高熔点的Cu6Sn5的金属间化合物的耐热性高的接合部。然而，在形成通过包含Cu6Sn5的金属间化合物而Cu粒子彼此结合的状态的过程中，以使熔融的Sn在接合层内均匀地流动并完全填埋Cu粒子的间隙的方式进行控制是极为困难的。换言之，在形成通过包含Cu6Sn5的金属间化合物而Cu粒子彼此结合的状态的过程中，在接合层内残留空间(空洞)是无法避免的。该空洞成为起点，可能会因产品的动作时所产生的应力而产生裂纹。
另一方面，在专利文献2记载有包含含有Cu以及Sn的合金粒子和有机粘合剂树脂的接合材料。一般认为使用该接合材料形成的接合部具有合金粒子彼此结合的构造，并且成为在合金粒子间的空洞填充有有机粘合剂树脂的构造。
现有技术文献
专利文献
专利文献1：日本特许第3558063号
专利文献2：WO2002-028574
发明内容
一般认为对包含高熔点金属粒子以及低熔点金属粒子的接合材料如专利文献2那样加入有机粘合剂树脂，填充金属粒子间的空洞，从而能够减少以空洞为起点的裂纹。然而，由于金属粒子的比重与有机粘合剂树脂的比重差异大，例如在导体部件上印刷接合材料，在印刷的接合材料上载置半导体元件而进行接合的情况下，存在由于比重差导致金属粒子以及有机粘合剂树脂在接合材料的内部偏分布的情况。这样的不均匀的接合部无法充分地确保半导体元件与导体部件的导通，接合强度也变低，可能导致接合不良。
本发明的目的在于提供一种具备抑制金属粒子以及金属间化合物与填充树脂在接合方向上的偏分布而接合可靠性高的接合部的半导体装置以及半导体装置的制造方法。
本发明的半导体装置的特征在于，具备：
半导体元件；
导体部件；以及
接合部，将所述半导体元件与所述导体部件伴随着电导通而接合，
所述接合部包括：
第一金属粒子，包含第一金属；
金属间化合物，包含所述第一金属以及熔点比所述第一金属低的第二金属，该金属间化合物将所述第一粒子彼此连结；以及
填充树脂，
并且所述接合部在与接合方向平行的任意的剖面内具有：
混合金属区域，包括所述第一粒子以及所述金属间化合物的连结构造从与所述半导体元件的接合面连续地形成直到与所述导体部件的接合面；以及
混合树脂区域，形成于相邻的2个所述混合金属区域之间，所述填充树脂在区域内所占的比例比所述混合金属区域大，所述连结构造与所述半导体元件或者所述导体部件中的至少一方不相接。
另外，该发明的半导体装置的制造方法的特征在于，具备：
接合材料供给工序，向半导体元件或者导体部件中的任意一方之上供给接合材料，在所述接合材料的表面形成空隙，所述接合材料包括包含第一金属的第一粒子、包含熔点比所述第一金属低的第二金属的第二粒子和填充树脂；
载置工序，在形成有所述空隙的所述接合材料之上载置并按压所述导体部件或者所述半导体元件中的任意另一方，使偏分布于所述接合材料的表面的所述填充树脂移动至所述空隙；以及
接合工序，通过在比所述第二金属的熔点高且比所述第一金属的熔点低的温度下加热所述接合材料，形成通过包含所述第一金属以及所述第二金属的金属间化合物而所述第一粒子彼此连结的构造，并形成将所述半导体元件与所述导体部件伴随着电导通而接合的接合部。
发明的效果
根据本发明，能够通过使偏分布在接合材料的表面的填充树脂向设置于接合材料的空隙移动，抑制在接合方向上的填充树脂的偏分布，利用包括金属粒子以及金属间化合物的连结构造将半导体元件与导体部件可靠地接合，能够提供一种接合可靠性高的半导体装置。
附图说明
图1为示出本发明的实施方式1的半导体装置的导体部件与半导体元件的接合部的主要部分立体图。
图2为在图1中不显示半导体元件的图。
图3为示出本发明的实施方式1的半导体装置的导体部件与半导体元件的接合部所使用的接合材料的加热前(a)以及加热后(b)的示意图。
图4为示出本发明的实施方式1的半导体装置的导体部件与半导体元件的接合工序的主要部分立体图。
图5为示意性地示出本发明的实施方式1的半导体装置的导体部件与半导体元件的接合部的制造工序中的变化的主要部分剖视图。
图6为示出本发明的实施方式1的半导体装置的导体部件与半导体元件的接合部的剖视图(a)以及其主要部分放大图(b)。
图7为示出比较例的半导体装置的导体部件与半导体元件的接合部的主要部分剖视图。
图8为示意性地示出本发明的实施方式2的半导体装置的导体部件与半导体元件的接合部的制造工序中的变化的主要部分剖视图。
图9为示出本发明的实施方式3的半导体装置的制造方法的剖视图。
图10为示出本发明的实施方式4的电力转换装置的示意图。
(附图标记说明)
1：半导体装置；2：电路基板；3：半导体元件；4：接合部；5：背面电极；6：高熔点金属粒子；7：金属间化合物；8：填充树脂；9：低熔点金属粒子；10：固化前的填充树脂；11：接合材料；12：网板；13：开口部；14：刮板；15：空隙；16：低熔点金属皮膜；17：注入的填充树脂；18：树脂注入用框；21、23：电路基板的电极；22：电路基板的绝缘基板；41：混合金属区域；42：混合树脂区域；100：电源；200：电力转换装置；201：主转换电路；202：半导体模块；203：控制电路；300：负载。
具体实施方式
实施方式1.
以下，基于附图对本发明的实施方式1进行说明。此外，在各附图中，相同附图标记表示相同或者相当部分。
如图1、2所示，本发明的半导体装置1具有如下构造：在绝缘层22的两侧形成有电极21、23的电路基板2(导体部件)的表面，经由包括后述的接合材料的接合部4而接合了半导体元件3。接合部4如后述那样具有混合金属区域41以及混合树脂区域42。
电路基板2的绝缘层22能够使用氮化硅、氧化铝、氮化铝等陶瓷板。从发热量大的电力用半导体装置整体的放热的观点出发，优选使用导热系数20W/m·K以上的材料，更加优选使用导热系数70W/m·K上的材料。设置于所述绝缘层22的表面及背面的电极21、23的材质使用了Cu。此外，电极21、23不限于Cu，只要在最表面设置有能够良好地接合的、由Au、Pt、Pd、Ag、Cu、Ni中的任意材料或者它们的合金构成的金属化层，则也可以使用Al、Ni的电极材料。
半导体元件3由硅(Si)、碳化硅(SiC)、氮化镓(GaN)、砷化镓(GaAs)、金刚石(C)等半导体材料形成。在本发明的半导体装置1所使用的半导体元件3的与电路基板2对置的面设置有金属化层以确保与接合部4的接合性，最表面为由Au、Pt、Pd、Ag、Cu、Ni中的任意材料或者它们的合金构成的金属化层。使用了这些材料的半导体元件3为IGBT(绝缘栅双极型晶体管，Insulated Gate Bipolar Transistor)、二极管、MOSFET(metal-oxide-semiconductor field-effect transistor，金属氧化物半导体场效应晶体管)等纵型半导体元件。
使用图3对用于本发明的半导体装置1的接合材料进行说明。图3(a)为示出用于本发明的半导体装置1的接合材料的加热前的状态的图。接合材料为包含以在接合温度下熔融的Sn为主的焊料粒子(低熔点金属粒子9)、在上述接合温度下不熔融的Cu粒子(高熔点金属粒子6)和作为固化前的填充树脂10的聚酰亚胺类树脂的糊状的接合材料。优选上述接合材料包含金属粒子6、9以及用于被接合面的清洁化的助焊剂成分。另外，能够适当附加用于调整接合材料糊的粘度等特性的溶剂成分。从图中省略记载了上述助焊剂成分、溶剂。图3(b)为示出接合材料11的加热后的状态的图。当加热上述的接合材料时，焊料粒子熔融而浸湿展开并与Cu粒子的表面接触，从而两者相互进行反应。其结果，形成了包含具有比接合温度高的熔点的Cu6Sn5的金属间化合物7，形成了通过该金属间化合物7而Cu粒子彼此结合的连结构造。焊料粒子通过该反应被消耗，能够得到即使再次暴露于接合温度下也不再熔融的高熔点的接合部4。另外，以填埋这些金属成分的间隙的方式配置固化的填充树脂8。如后述那样在混合金属区域41内，使固化的填充树脂8在Cu粒子(高熔点金属粒子6)与金属间化合物7之间微细地分散，这对于缓和施加于接合部的热应力并提高可靠性是重要的。
高熔点金属粒子6并非必须是球状，例如也可以为鳞片状、棒状、树状或者表面的凹凸非常大的形状。优选为相邻的高熔点金属粒子6彼此能够相互地接触的形状。此外，在考虑到接合材料的印刷性的情况下，最优选为球状。优选低熔点金属粒子9以均匀地结合高熔点金属粒子6之间的方式配置。因此，优选低熔点金属粒子9的粒径比高熔点金属粒子6的粒径小且为球状。但是，考虑到当极端地进行粒径的微细化时由于低熔点金属粒子9的表面积过大而需要大量的助焊剂成分，低熔点金属粒子9的粒径为1～5μm程度，高熔点金属粒子6的粒径为10～50μm程度比较好。在使用焊料粒子作为低熔点金属粒子9、使用Cu粒子作为高熔点金属粒子6的情况下，低熔点金属粒子9的量与高熔点金属粒子6的量的质量比为1/3～1/2比较好。据此，能够结合高熔点金属粒子6且将低熔点金属粒子9的残留抑制为最低限度。
此外，在本实施方式1中，作为低熔点金属粒子9使用以Sn为主的焊料粒子，但是只要为在低于接合温度下熔融的金属类即可。考虑到进行半导体装置的接合的温度为低于300℃的温度，能够使用Sn、In或者含有其他的元素的Sn合金、In合金或者它们的混合物。另外，作为高熔点金属粒子6，不限于Cu粒子，只要是能够在与熔融的低熔点金属粒子9之间生成金属间化合物而确保高熔点金属粒子6彼此的连接的材料即可。例如能够使用Cu、Ag、Ni、Al、Zn、Au、Pt、Pd、以它们为主成分的合金或者它们的混合物。
作为填充树脂8能够利用热固化树脂，不仅能够使用聚酰亚胺类树脂，还能够使用例如环氧类树脂、酚醛类树脂、聚氨酯类树脂、三聚氰胺类树脂以及尿素类树脂等。填充树脂8的量优选为相对于接合部4整体的体积比为5～40％。在填充树脂的量比该范围少的情况下，可能无法确保填充树脂8填充高熔点金属粒子6与金属间化合物7的间隙所需的充分的量。另一方面，在填充树脂8的量比该范围多的情况下，由于大大超过了高熔点金属粒子6与金属间化合物7之间的间隙的体积，存在填充树脂8会偏分布而接合可靠性下降的情况。
使用附图对本发明的半导体装置的制造方法进行说明。
图4为示出作为本发明的实施方式1的半导体装置的导体部件与半导体元件的接合工序的主要部分立体图。首先如图4(a)那样，在电路基板2的上表面配备具有网格状的开口部13的网板12。以使用刮板14将被供给到上述网板12上的接合材料11填充于网格状的开口部13的方式进行扫描，从而在电路基板2的接合半导体元件3的区域，一边转印网格状的开口部13的形状一边供给接合材料11。据此，如图4(b)所示，接合材料11以具备格子状的空隙15的状态配置于电路基板2上。之后，在供给的接合材料11上载置半导体元件3并向所述接合材料11按压，在接合温度下加热，从而如图4(c)所示完成接合。
此外，接合部4的厚度能够与半导体装置1的要求规格相匹配地适当选择，但是从印刷性和经济性以及可靠性的观点出发，可以从50～200μm的范围中适当选择。另外，构成上述的网板12的材质可以考虑印刷时所需的柔软性及与接合材料的脱模性来选择。例如，可以使用聚酯纤维、尼龙、聚芳酯、不锈钢等纤维。所述纤维的线径根据预定的印刷厚度而决定，在将本发明的半导体装置1的接合部4的厚度设为50～200μm的范围的情况下，所述纤维的线径优选设为20～100μm，纤维与纤维的间距优选设为200～500μm程度。
接下来，使用图5对上述接合工序中的接合部的变化进行说明。在图5(a)中示出刚印刷后的情形。为在存在网格的区域形成了空隙15的状态。在图5(b)中示出在印刷后经过了时间时的情形。高熔点金属粒子6以及低熔点金属粒子9的比重比固化前的填充树脂10大了大约10倍。因此，随着时间的经过，高熔点金属粒子6以及低熔点金属粒子9沉降，填充树脂10会偏分布于接合材料的表面。之后，通过载置如图5(c)所示的半导体元件3并向接合材料11按压，偏分布于接合材料11的表面的具有流动性的填充树脂10优先地移动至空隙15，从而高熔点金属粒子6以及低熔点金属粒子9能够与半导体元件3的背面电极5可靠地接触。通过在该状态下加热到接合温度，如图5(d)所示，形成了包括高熔点金属粒子6以及金属间化合物7的连结构造与半导体元件3可靠地接合的良好的接合部4。此外，在实施方式1的包含Cu粒子和焊料粒子以及聚酰亚胺类树脂的接合材料的情况下，接合加热时的温度条件能够从作为超过焊料粒子的熔点的温度的250℃～300℃程度中适当选择。
这样，在实施方式1的半导体装置1中，通过在接合材料设置空隙15，使容易偏分布的多余的填充树脂10流动至空隙15，从而能够得到半导体元件3与导体部件2通过包括高熔点金属粒子6以及金属间化合物7的连结构造而可靠地接合的半导体装置1。据此，能够充分地确保半导体元件3与导体部件2的导通并且得到高的接合强度。另外，由于金属粒子间的空洞被固化的填充树脂8填充，因此能够抑制以空洞为起点的裂纹的产生。
如以上那样，根据本实施方式1，能够提高半导体装置的接合可靠性。
此外，空隙15的配置不限于格子状，例如也可以为条纹状、点状等其他的图案。另外，不限于规则的配置，也可以为随机的配置。为了接合部的均匀性，优选在供给的接合材料11的表面整体分散地、均等地、等间隔地配置空隙。经由具备与想要形成的空隙15的配置对应的开口部的印刷板来供给接合材料11，从而能够同时进行接合材料11的供给和空隙15的形成。
另外，在本实施方式1中，在供给接合材料的同时形成了空隙，但是不限于此，也可以在供给接合材料之后进行空隙的形成。在这种情况下，作为在供给的接合材料形成空隙的方法，例如可以考虑按压图案模具、刮成槽状等方法。
另外，在电路基板2上供给接合材料并载置了半导体元件3，但是不限于此，也可以在半导体元件3上供给接合材料11并载置电路基板2。
接下来，对本发明的半导体装置1的构造进行说明。在图6(a)中示出将利用上述的制造方法制造出的半导体装置1通过与接合方向平行的剖面切断而得到的剖视图。另外，在图6(b)中示出图6(a)中的接合部4的混合树脂区域42周边的放大图。如图6(b)所示，在接合部4的剖面存在混合金属区域41以及混合树脂区域42，混合树脂区域42位于相邻的2个混合金属区域41之间。混合树脂区域42为填充树脂10流动至上述的空隙15而形成的区域，与空隙15的配置对应地被配置为格子状。
在混合金属区域41中，包括高熔点金属粒子6以及金属间化合物7的连结构造从半导体元件3的接合面被连续地形成直到电路基板2的接合面。另一方面，在混合树脂区域42中，所述连结构造不与半导体元件3相接。由于混合树脂区域42为固化前的填充树脂10流入至存在空隙15的部位而形成的区域，因此与混合金属区域41相比，填充树脂8在区域内所占的比例更大。典型地，填充树脂8在混合金属区域41中所占的量为小于50体积％，填充树脂8在混合树脂区域42中所占的量为50体积％以上。
此外，与空隙15同样地，混合树脂区域42的配置不限于格子状，例如也可以为条纹状、点状等其他的图案。另外，不限于规则的配置，也可以为随机的配置。为了接合部4的均匀性，优选在接合部4整体分散地、均等地、等间隔地配置。另外，在本发明的半导体装置的半导体元件的内部一般地设置有对电气、热的导通做出贡献的重要的有效电路区域和不需要得到电气的、热的导通的外周部等无效电路区域。因此，与半导体元件3的电路构造对应地，将混合树脂区域42配置于无效区域，并降低接合部的刚性，这对提高接合可靠性是有效的。
另一方面，图7示出了作为比较例的现有技术的半导体装置的导体部件与半导体元件的接合部的主要部分剖视图。在现有技术的半导体装置中，在接合工序中在接合材料没有设置空隙15。因此，在接合工序中由于与金属粒子的比重的不同，在固化前的填充树脂10偏分布于接合材料11的表面的状态下载置半导体元件3。其结果，如图7所示，填充树脂8偏分布于接合部4的上部，半导体元件3无法与高熔点金属粒子6以及金属间化合物7充分地接触，无法实现半导体元件3与电路基板2的导通从而无法满足作为半导体装置的导通性能。另外可能在接合强度的方面也无法得到充分的强度。
与之相对，在本发明的半导体装置1中，由于多余的填充树脂10被偏于混合树脂区域41，在混合金属区域41中利用包括金属粒子6以及金属间化合物7的连结构造将半导体元件3与导体部件2伴随着电导通而可靠地接合，因此能够得到在导通性能方面、接合强度方面均接合可靠性高的半导体装置。
·实施方式2
图8为示意性地示出作为本发明的实施方式2的半导体装置的导体部件与半导体元件的接合部的制造工序中的变化的主要部分剖视图。在图8中，低熔点金属粒子9、固化前的填充树脂10、电路基板的电极21、空隙15、半导体元件3、背面电极5、金属间化合物7、混合金属区域41、混合树脂区域42是相同的。在以下叙述与作为本发明的实施方式1的半导体装置的导体部件与半导体元件的接合部的制造工序中的变化不同的点。
实施方式2在接合材料11中的高熔点金属粒子6的表面设置有与低熔点金属粒子9相同的成分的低熔点金属皮膜16这一点上与实施方式1不同，除此以外的点与实施方式1相同。通过在高熔点金属粒子6的表面设置低熔点金属皮膜16，具有可靠地使在接合温度下熔融的低熔点金属在高熔点金属粒子6的表面浸湿展开的效果。另外，具有使高熔点金属粒子6均等地分散的效果。此外，具有经由利用低熔点金属皮膜16与高熔点金属粒子6的反应而形成的金属间化合物7而可靠地进行高熔点金属粒子6的连结的效果。
在使用焊料作为低熔点金属粒子9以及低熔点金属皮膜16并且使用Cu粒子作为高熔点金属粒子6的情况下，使低熔点金属皮膜16与低熔点金属粒子9合计的量与高熔点金属粒子6的量的质量比为1/3～1/2比较好。低熔点金属皮膜16简便地通过镀敷而形成。低熔点金属皮膜16的厚度为能够通过镀敷而经济地形成的1～5μm是适当的，但是只要在所述质量比的范围内则能够适当选择。
·实施方式3
实施方式3是在实施方式1的半导体装置的制造方法中进一步加入了树脂注入工序的实施方式。除此以外的点与实施方式1相同。
使用图9对实施方式3进行说明。在与实施方式1同样地将半导体元件3与电路基板2接合后(图9(a))，进行树脂注入工序。
作为树脂注入工序，例如将树脂注入用框18以包围接合部4的方式抵靠于电路基板2上而设置，对该树脂注入用框18的内侧供给填充树脂17(图9(b))。作为树脂注入用框18，例如能够使用表面涂布有氟树脂的由硅树脂构成的框。这种情况下能够确保与电路基板2的紧贴性和与注入的树脂的剥离性，因此是优选的。在供给填充树脂17时，优选以覆盖接合部4的方式供给填充树脂17。另外，在之后设置了连接半导体元件3表面的电极与外部端子的工序的情况下，优选供给不遮盖半导体元件3表面的程度的量的填充树脂17。
在供给填充树脂17之后，利用真空消泡使填充树脂17渗透于接合部4内。之后，利用加热使填充树脂17热固化(图9(c))。在从填充树脂17的供给到热固化为止的工序中，也可以利用使用了重物、弹簧的夹具推压树脂注入用框18，以使得树脂注入用框18总是被抵靠于电路基板2上。填充树脂17固化后，移除树脂注入用框18。这样得到了本实施方式3的半导体装置。
通过在接合后注入填充树脂17，能够可靠地填充在最初的热固化时残留于接合部4内的空洞。另外，当想要提高空洞的填充率而向接合材料添加大量填充树脂时，有时会损害接合材料的印刷容易度、分散容易度。然而，如果在接合工序后注入填充树脂，则不需要在印刷时增加接合材料中的树脂量。据此，能够不损害所述印刷容易度、分散容易度，并提高空洞的填充率。
此外，树脂注入的手段不限于此，只要是能够将树脂注入于残留于接合部4内的空洞的手段，则可以使用任何手段。
·实施方式4.
本实施方式是将上述的实施方式1～3的半导体装置应用于电力转换装置的实施方式。本发明不限于特定的电力转换装置，但是以下作为实施方式4，对将本发明应用于三相逆变器的情况进行说明。
图10为示出应用了本实施方式的电力转换装置的电力转换***的结构的框图。
图10所示的电力转换***包括电源100、电力转换装置200、负载300。电源100为直流电源，向电力转换装置200供给直流电力。电源100能够由各种部件构成，例如能够由直流***、太阳能电池、蓄电池构成，也可以由连接于交流***的整流电路、AC/DC转换器构成。另外，也可以由将从直流***输出的直流电力转换为预定的电力的DC/DC转换器构成电源100。
电力转换装置200为连接于电源100与负载300之间的三相逆变器，将从电源100供给的直流电力转换为交流电力，并向负载300供给交流电力。如图10所示，电力转换装置200具备：主转换电路201，将直流电力转换为交流电力并输出；以及控制电路203，将控制主转换电路201的控制信号输出至主转换电路201。
负载300为由从电力转换装置200供给的交流电力驱动的三相电动机。此外，负载300不限于特定的用途，为搭载于各种电气设备的电动机，例如用作面向混合动力汽车、电动汽车、铁路车辆、电梯或者空调设备的电动机。
以下说明电力转换装置200的详情。主转换电路201具备开关元件和续流二极管(未图示)，通过开关元件开闭，将从电源100供给的直流电力转换为交流电力，并供给到负载300。主转换电路201的具体的电路结构有各种结构，但是本实施方式的主转换电路201为二级三相全桥电路，能够包括6个开关元件和反并联于各个开关元件的6个续流二极管。主转换电路201的各开关元件、各续流二极管由使用了与上述的实施方式1～3中的任意实施方式相当的半导体装置1的半导体模块202构成。6个开关元件中每2个开关元件串联连接并构成上臂和下臂，各上臂和下臂构成全桥电路的各相(U相、V相、W相)。此外，各上臂和下臂的输出端子，即主转换电路201的3个输出端子连接于负载300。
另外，主转换电路201具备驱动各开关元件的驱动电路(未图示)，但驱动电路也可以被内置于半导体模块202，也可以为与半导体模块202分开地具备驱动电路的结构。驱动电路生成驱动主转换电路201的开关元件的驱动信号，并供给到主转换电路201的开关元件的控制电极。具体而言，根据来自后述的控制电路203的控制信号，将使开关元件成为接通(ON)状态的驱动信号和使开关元件成为断开(OFF)状态的驱动信号输出至各开关元件的控制电极。在将开关元件维持为接通状态的情况下，驱动信号为开关元件的阈值电压以上的电压信号(接通信号)，在将开关元件维持为断开状态的情况下，驱动信号为开关元件的阈值电压以下的电压信号(断开信号)。
控制电路203控制主转换电路201的开关元件，以使得期望的电力被供给到负载300。具体而言，基于应供给到负载300的电力来计算主转换电路201的各开关元件应成为接通状态的时间(接通时间)。例如能够通过根据应输出的电压调制开关元件的接通时间的PWM控制来控制主转换电路201。然后，向主转换电路201具备的驱动电路输出控制指令(控制信号)，以使得在各时间点接通信号被输出至应成为接通状态的开关元件，断开信号被输出至应成为断开状态的开关元件。驱动电路根据该控制信号，将接通信号或者断开信号作为驱动信号输出至各开关元件的控制电极。
在本实施方式的电力转换装置中，由于应用使用了实施方式1～3的半导体装置的半导体模块作为主转换电路201的开关元件和续流二极管，因此能够实现可靠性的提高。
在本实施方式中，说明了将本发明应用于二级三相逆变器的示例，但是本发明不限于此，能够应用于各种电力转换装置。在本实施方式中，采用了二级电力转换装置，但是也可以为三级、多级电力转换装置，在将电力供给到单相负载的情况下也可以将本发明应用于单相逆变器。另外，在将电力供给到直流负载等的情况下也能够将本发明应用于DC/DC转换器、AC/DC转换器。
另外，应用了本发明的电力转换装置不限于上述的负载为电动机的情况，例如也能够用作放电加工机、激光加工机、或者感应加热烹饪器、非接触器供电***的电源装置，还能够用作太阳能发电***、蓄电***等的功率调节器。

Claims (17)

1.一种半导体装置，具备：
半导体元件；
导体部件；以及
接合部，将所述半导体元件与所述导体部件伴随着电导通而接合，
所述接合部包括：
第一粒子，包含第一金属；
金属间化合物，包含所述第一金属以及熔点比所述第一金属低的第二金属，该金属间化合物将所述第一粒子彼此连结；以及
填充树脂，
并且所述接合部在与接合方向平行的任意的剖面内具有：
混合金属区域，包括所述第一粒子以及所述金属间化合物的连结构造从与所述半导体元件的接合面连续地形成直到与所述导体部件的接合面；以及
混合树脂区域，形成于相邻的2个所述混合金属区域之间，所述填充树脂在区域内所占的比例比所述混合金属区域大，所述连结构造与所述半导体元件或者所述导体部件中的至少一方不相接。
2.根据权利要求1所述的半导体装置，其中，
在所述混合树脂区域中，所述填充树脂在区域内所占的比例为50体积％以上。
3.根据权利要求1或者2所述的半导体装置，其中，
所述混合树脂区域被分散地配置于所述接合部整体。
4.根据权利要求1至3中的任意一项所述的半导体装置，其中，
所述混合树脂区域被等间隔地配置。
5.根据权利要求1至4中的任意一项所述的半导体装置，其中，
所述混合树脂区域被配置为格子状。
6.根据权利要求1至5中的任意一项所述的半导体装置，其中，
所述第一金属包含Cu、Ag、Ni中的任意一个以上，
所述第二金属包含Sn、In中的任意一个以上。
7.根据权利要求6所述的半导体装置，其中，
所述第一金属包含Cu，
所述第二金属包含Sn，
所述金属间化合物包含Cu6Sn5。
8.根据权利要求1至7中的任意一项所述的半导体装置，其中，
填充树脂在所述接合部所占的比例为5体积％以上且40体积％以下。
9.一种电力转换装置，具备：
主转换电路，具有权利要求1至8中的任意一项所述的半导体装置，该主转换电路将输入的电力转换而输出；
驱动电路，将驱动所述半导体装置的驱动信号输出至所述半导体装置；以及
控制电路，将控制所述驱动电路的控制信号输出至所述驱动电路。
10.一种半导体装置的制造方法，具备：
接合材料供给工序，向半导体元件或者导体部件中的任意一方之上供给接合材料，在所述接合材料的表面形成空隙，所述接合材料包括包含第一金属的第一粒子、包含熔点比所述第一金属低的第二金属的第二粒子和填充树脂；
载置工序，在形成有所述空隙的所述接合材料之上载置并按压所述导体部件或者所述半导体元件中的任意另一方，使偏分布于所述接合材料的表面的所述填充树脂移动至所述空隙；以及
接合工序，在比所述第二金属的熔点高且比所述第一金属的熔点低的温度下将所述接合材料加热。
11.根据权利要求10所述的半导体装置的制造方法，其中，
在所述接合材料供给工序中，在所述接合材料的表面整体分散地形成所述空隙。
12.根据权利要求10或者11所述的半导体装置的制造方法，其中，
在所述接合材料供给工序中，等间隔地形成所述空隙。
13.根据权利要求10至12中的任意一项所述的半导体装置的制造方法，其中，
在所述接合材料供给工序中，将所述空隙形成为格子状。
14.根据权利要求10至13中的任意一项所述的半导体装置的制造方法，其中，
在所述接合材料供给工序中，经由具备与想要形成的所述空隙的配置对应的开口部的印刷板供给所述接合材料，从而同时进行所述接合材料的供给和所述空隙的形成。
15.根据权利要求10至13中的任意一项所述的半导体装置的制造方法，其中，
在所述接合材料供给工序中，在供给所述接合材料之后，进行所述空隙的形成。
16.根据权利要求10至15中的任意一项所述的半导体装置的制造方法，其中，
在所述接合材料供给工序中，所述第一粒子在表面具有包含所述第二金属的皮膜。
17.根据权利要求10至16中的任意一项所述的半导体装置的制造方法，其中，
具备树脂注入工序，在所述接合工序之后，所述树脂注入工序还向所述接合部内注入所述填充树脂。
CN201880021844.0A 2017-04-27 2018-04-26 半导体装置以及电力转换装置及半导体装置的制造方法 Withdrawn CN110520974A (zh)

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