CN110518784A - Power MOSFET parallel current-equalizing circuit in a kind of inverter - Google Patents
Power MOSFET parallel current-equalizing circuit in a kind of inverter Download PDFInfo
- Publication number
- CN110518784A CN110518784A CN201910654830.9A CN201910654830A CN110518784A CN 110518784 A CN110518784 A CN 110518784A CN 201910654830 A CN201910654830 A CN 201910654830A CN 110518784 A CN110518784 A CN 110518784A
- Authority
- CN
- China
- Prior art keywords
- power mosfet
- branch
- current
- mosfet
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The present invention provides power MOSFET parallel current-equalizing circuit in a kind of inverter, and the circuit includes: control module, for controlling the work of entire circuit；Drive module, including M intelligent drives chip, for each intelligent drives chip for driving corresponding bridge arm in inverter, each intelligent drives chip exports the adjustable driving signal in the road N to respectively drive N number of paralleling MOS FET branch；MOSFET module, including power mosfet switch device and RCD absorbing circuit, the RCD absorbing circuit is for absorbing the inverse peak voltage that the power mosfet switch device generates in operating circuit；Detection module, including Hall sensor and temperature sensor, each MOSFET branch seals in a Hall sensor to detect each branch by the electric current between the power mosfet switch device drain and source electrode, and the temperature sensor is used to detect the temperature of each power mosfet switch device.Each MOSFET branch of the present invention has respective driving signal and current sensing device, and the electric current that each MOSFET branch may be implemented flows and over-current detection.
Description
Technical field
The present invention relates to power MOSFET parallel current-sharing electricity in AC-DC conversion technical field more particularly to a kind of inverter
Road.
Background technique
Under the premise of China advocates protection environment energetically, new-energy automobile obtains development and popularization energetically.It is wherein new
Energy automobile includes pure electric automobile, fuel cell car etc..Most important in new-energy automobile is exactly its three electric systems, electricity
Pond, automatically controlled and motor.Motor is as energy conversion elements, and battery provides energy, and automatically controlled responsible control motor operates, by inverse
Become device for DC conversion as alternating current.Inverter generally uses power electronic devices as switching device, as power MOSFET,
IGBT, SiC etc..These electronic power switches, due to the difference of device and PCB, flow through each in turning on and off the time
The electric current on road can not be identical, will lead to that device heating is uneven in this way, reduces the service life and reliability of device.
Technical solution general at present is inherent characteristic (positive temperature characterisitic of MOSFET drain-source conduction impedance) Lai Shixian with device,
However this scheme not can solve the non-uniform problem of device heating.
Summary of the invention
In order to solve the above-mentioned technical problem, the invention proposes power MOSFET parallel current-equalizing circuits in a kind of inverter.
Power MOSFET parallel current-equalizing circuit in a kind of inverter, the circuit include: control module, drive module,
MOSFET module and detection module；
The control module controls the work of entire circuit；
The drive module includes M intelligent drives chip, each intelligent drives chip is right in inverter for driving
The bridge arm answered, each intelligent drives chip export the adjustable driving signal in the road N to respectively drive N number of paralleling MOS FET branch；
The MOSFET module includes power mosfet switch device and RCD absorbing circuit, and the RCD absorbing circuit is used for
Absorb the inverse peak voltage that the power mosfet switch device generates in operating circuit；
The detection module includes Hall sensor and temperature sensor, and each MOSFET branch seals in a hall sensing
Device passes through the electric current between the power mosfet switch device drain and source electrode, the temperature sensor to detect each branch
For detecting the temperature of each power mosfet switch device.
Further, each bridge arm includes N number of paralleling MOS FET branch, and N number of paralleling MOS FET branch and the inspection
The Hall sensor for surveying module is arranged in series, each bridge arm is equipped with a temperature sensor to detect power in the bridge arm
The temperature of switch mosfet device.
Further, 3 RCD absorbing circuits are arranged in each MOSFET branch, open for absorbing the power MOSFET
Close the inverse peak voltage that device generates in operating circuit.
Further, the detection module is connect with the drive module and the control module respectively, the control mould
The block output road M PWM is connected with M intelligent drives chip in the drive module.
Further, the electric current for each MOSFET branch being flowed through in single bridge arm is isolated by the Hall sensor
Detection, and the current signal that will test is sent respectively to drive the intelligent drives chip of the bridge arm and control module.
Further, the grid of each power mosfet switch element seals in a solid relay, and the number can
Resistance is adjusted to be controlled by the control module, the control module is controlled can with the grid number of each power mosfet switch element
Control resistance is connected.
Further, the respective adjustable road the M PWM of output duty cycle of M intelligent drives chip, respectively drives N number of parallel connection
MOSFET branch receives the current signal of the detection module, with each MOSFET branch of determination in dynamic and electric current under static state
Whether overcurrent and flow.
Further, such as each MOSFET branch, electric current is in over-current state under dynamic and static state, then stops exporting PWM
Signal；If electric current is in uneven stream mode to each MOSFET branch under dynamic and static state, each branch PWM duty cycle size is finely tuned
To reach equal stream mode.
Further, the control module is used to realize control to inverter and generates the road M complementary PWM letter two-by-two
Number, the current signal and temperature signal of the detection module are received, the grid string in the power mosfet switch element is controlled
The solid relay entered is to reach the dynamic current equalizing of MOSFET.
Further, M is equal to 6, N and is more than or equal to 2.
Compared with prior art, in inverter of the present invention power MOSFET parallel current-equalizing circuit each branch have it is respective
Driving signal and current sensing device can be very good to realize that the electric current of each branch flows and over-current detection；Inverter three-phase 6
In (bridge) arm, each bridge arm has suitable RCD absorbing circuit, can preferably protect power mosfet switch element to avoid its mistake
Crushing is bad；It is relatively reliable and timely that traditional software scenario is compared with current share scheme using the protection of hardware simultaneously.
The allomeric function of power MOSFET parallel current-equalizing circuit realizes to include hardware handles and software in inverter of the present invention
Processing.Hardware handles realize that the intelligent drives chip receives the power MOSFET of each driving branch by intelligent drives chip
The current value of switch element can set maximum current value with inside and make comparisons, and overcurrent such as occur, then all PWM are automatically closed immediately
Wave output, realizes overcurrent protection；The intelligent drives chip receives the average current signal that control module is sent simultaneously, will be each
The current value of MOSFET branch is made comparisons with average current value, and the PWM wave duty ratio size of exported branch is determined with this,
Realize Current for paralleled.Software processing includes various algorithms to guarantee effective operation of motor control.
Additional aspect and advantage of the invention will provide in following description section, will partially become from the following description
Obviously, or practice through the invention is recognized.
Detailed description of the invention
Fig. 1 shows the functional block diagram of power MOSFET parallel current-equalizing circuit in a kind of inverter of the present invention；
Fig. 2 shows the entire block diagrams of power MOSFET parallel current-equalizing circuit in a kind of inverter of the invention；
Fig. 3 shows the control flow chart of power MOSFET parallel current-equalizing circuit in a kind of inverter of the present invention；
Fig. 4 shows a kind of circuit diagram of control module of the present invention；
Fig. 5 shows a kind of power mosfet switch element of U phase of the present invention and the circuit diagram of detection module；
Fig. 6 shows a kind of circuit diagram of drive module of the present invention；
The present invention that the following detailed description will be further explained with reference to the above drawings.
Specific embodiment
To better understand the objects, features and advantages of the present invention, with reference to the accompanying drawing and specific real
Applying mode, the present invention is further described in detail.It should be noted that in the absence of conflict, the implementation of the application
Feature in example and embodiment can be combined with each other.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, still, the present invention may be used also
To be implemented using other than the one described here other modes, therefore, protection scope of the present invention is not by described below
Specific embodiment limitation.
It should be noted that it can be directly to separately when a component is considered as " connection " another component
One component may be simultaneously present component placed in the middle.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.
Please refer to Fig. 1 to Fig. 6, the present invention proposes power MOSFET parallel current-equalizing circuit in a kind of inverter, described
Circuit includes: control module, drive module, MOSFET module and detection module；
The control module controls the work of entire circuit；
The drive module includes M intelligent drives chip, each intelligent drives chip is right in inverter for driving
The bridge arm answered, each intelligent drives chip export the adjustable driving signal in the road N to respectively drive N number of paralleling MOS FET branch；
The MOSFET module includes power mosfet switch device and RCD absorbing circuit, and the RCD absorbing circuit is used for
Absorb the inverse peak voltage that the power mosfet switch device generates in operating circuit；
The detection module includes Hall sensor and temperature sensor, and each MOSFET branch seals in a hall sensing
Device passes through the electric current between the power mosfet switch device drain and source electrode, the temperature sensor to detect each branch
For detecting the temperature of each power mosfet switch device.
It should be noted that M, which is equal to 6, N, is more than or equal to 2, it is preferred that N is equal to 4, but not limited to this.
It should be noted that the RCD absorbing circuit is made of resistance Rs, capacitor Cs and diode VDs.Resistance Rs can be with
It is connected in parallel, can also be connected in parallel with diode VDs with capacitor Cs.RCD absorbing circuit is better than RC to the inhibition of overvoltage
Absorbing circuit, the raised amplitude of Vce is smaller compared with RC circuit.Since the absorption resistance of big resistance value can be taken, to a certain degree
On reduce loss.The realization principle of the RCD absorbing circuit are as follows: if switch disconnects, be accumulated in energy in parasitic inductance and pass through
The parasitic capacitance of switch charges, and switching voltage rises.When its voltage rises to the voltage of Absorption Capacitance, absorption diode conducting,
Switching voltage is absorbed clamped, the about 1V or so of diode.The energy accumulated in parasitic inductance also charges to Absorption Capacitance.It opens
It closes during connecting, Absorption Capacitance passes through conductive discharge.
According to an embodiment of the invention, each bridge arm includes N number of paralleling MOS FET branch, and N number of paralleling MOS FET branch
Road and the Hall sensor of the detection module are arranged in series, each bridge arm is equipped with a temperature sensor to detect the bridge
The temperature of power mosfet switch device in arm.
According to an embodiment of the invention, 3 RCD absorbing circuits are arranged in each MOSFET branch, for absorbing the function
The inverse peak voltage that rate switch mosfet device generates in operating circuit.
According to an embodiment of the invention, the detection module is connect with the drive module and the control module respectively,
The control module output road the M PWM (Pulse width modulation, pulse width modulation) and M in the drive module
A intelligent drives chip is connected.
It should be noted that pulsewidth width modulated (PWM) basic principle are as follows: control mode is exactly to inverter circuit derailing switch
The on-off of part is controlled, and output end is made to obtain a series of equal pulse of amplitudes, and sine wave or institute are replaced with these pulses
The waveform needed.Multiple pulses are namely generated in the half period of output waveform, and the equal threshold voltages of each pulse is made to be positive string
Waveform, output smoothing obtained and low-order harmonic is few.The width of each pulse is modulated by certain rule, both can be changed
Output frequency also can be changed in the size of inverter circuit output voltage.
According to an embodiment of the invention, the electric current for flowing through each MOSFET branch in single bridge arm passes through the hall sensing
Device carries out isolation detection, and the current signal that will test is sent respectively to drive the intelligent drives chip of the bridge arm and control
Module.
According to an embodiment of the invention, the grid of each power mosfet switch element seals in a solid relay,
The solid relay is controlled by the control module, the control module control and each power mosfet switch element
Grid digital controllable resistance is connected.
According to an embodiment of the invention, the respective adjustable road the M PWM of output duty cycle of M intelligent drives chip, respectively drives
N number of paralleling MOS FET branch, receives the current signal of the detection module, with each MOSFET branch of determination in dynamic and static state
Whether lower electric current overcurrent and flows.If electric current is in over-current state to each MOSFET branch under dynamic and static state, then stop defeated
Pwm signal out；If electric current is in uneven stream mode to each MOSFET branch under dynamic and static state, each branch PWM duty is finely tuned
Than size to reach equal stream mode.
According to an embodiment of the invention, the control module is used to realize control to inverter and to generate the road M mutual two-by-two
The pwm signal of benefit receives the current signal and temperature signal of the detection module, controls in the power mosfet switch element
The solid relay that seals in of grid to reach the dynamic current equalizing of MOSFET.
Further, during the dynamic switch of the power mosfet switch element, number is controlled by control module
The resistance value of grid resistance realizes the dynamic current equalizing to the power mosfet switch element, effectively avoids because of device heating unevenness
The problem of service life that is even and leading to device and reliability reduce.
Further, in power mosfet switch element static opening process, by the positive temperature of the conducting resistance of its own
Characteristic and driving chip finely tune the duty ratio size of each MOSFET branch, realize equal to the static state of power mosfet switch element
Stream.
Further, the current signal of each MOSFET branch and the temperature of each bridge arm are exported in real time by the detection module
Signal can effectively prevent power mosfet switch element overcurrent damage and thermal breakdown to damage；It is inhaled by the RCD absorbing circuit
Due to voltage spikes of the power mosfet switch element in switching process is received, power mosfet switch element over-voltage is further prevented to hit
Wear damage.
Specifically, the control module is responsible for controlling entire normal operation circuit, comprising three phase alternating current motor control algolithm,
Signal AD gathering algorithm is detected on error running protection algorism and each road.Motor control algorithms using SVPWM duty ratio modulation,
FOC field orientation decoupling control, MTPA maximum torque control realize effective operation of alternating current generator.Error running protection algorism and
Detection signal AD acquisition guarantees that whole system is effectively reliably run.The control module output is mutual through modulated six tunnel of algorithm
It mends PWM wave and gives intelligent drives chip.Exporting each MOSFET grid in power MOFET switch element dynamic changing process simultaneously can
Control resistance signal；When detecting that electric current is greater than the bridge arm average current, then increase grid resistance resistance value, when detecting that electric current is low
When the bridge arm average current, then reduce grid resistance resistance value, is become with this to control each power mosfet switch element in switch
The size of current flowed through during changing is consistent.
In a specific embodiment of the present invention, the control module can be main control singlechip, but not limited to this.
The drive module is responsible for that each power mosfet switch element is driven to complete switch state in acceptable time
Conversion, so the driving chip in the drive module has enough output current capacities to guarantee power mosfet switch element
Normal switch.The driving chip receives the average current signal and each power mosfet switch that the control module is sent simultaneously
The actual current signal of element makes comparisons the current value of each power mosfet switch element with average current value；When detecting
When the electric current of certain MOSFET branch is greater than average current, reduce branch MOSFET grid PWM wave duty ratio size；When detecting
When certain MOSFET branch current is less than average current, increase branch MOSFET grid PWM duty cycle size, keeps each with this
The size of current that MOSFET branch flows through is consistent.
The detection module detects the current value of each MOSFET branch and the temperature value of each bridge arm Converting Unit respectively, and will
It detects obtained current value and temperature value is transmitted to the control module with the work shape of real-time monitoring power mosfet switch element
Condition further enhances the reliability of invertor operation.
Compared with prior art, each MOSFET branch of power MOSFET parallel current-equalizing circuit has in inverter of the present invention
Respective driving signal and current sensing device can be very good to realize that the electric current of each MOSFET branch flows and over-current detection；
In inverter three-phase 6 (bridge) arm, each bridge arm has suitable RCD absorbing circuit, can preferably protect power mosfet switch
Element avoids its excessive pressure damages；Simultaneously using hardware protection compared with current share scheme traditional software scenario it is relatively reliable and and
When.
The allomeric function of power MOSFET parallel current-equalizing circuit realizes to include hardware handles and software in inverter of the present invention
Processing.Hardware handles realize that the intelligent drives chip receives the power MOSFET of each driving branch by intelligent drives chip
The current value of switch element can set maximum current value with inside and make comparisons, and overcurrent such as occur, then all PWM are automatically closed immediately
Wave output, realizes overcurrent protection；The intelligent drives chip receives the average current signal that control module is sent simultaneously, will be each
The current value of MOSFET branch is made comparisons with average current value, and the PWM wave duty ratio size of exported branch is determined with this,
Realize Current for paralleled.Software processing includes various algorithms to guarantee effective operation of motor control.
The present invention is used in parallel suitable for N number of power mosfet switch device, so that a N number of power mosfet switch device
It can be flowed well under dynamic and static state, to improve the functional reliability of power mosfet switch device.
In several embodiments provided herein, it should be understood that disclosed equipment can be by others side
Formula is realized.Apparatus embodiments described above are merely indicative, for example, the division of the unit, only one kind are patrolled
Function division is collected, there may be another division manner in actual implementation, such as: multiple units or components can combine, or can collect
At another system is arrived, or some features can be ignored or not executed.In addition, shown or discussed each component part is mutual
Between coupling direct-coupling or communication connection can be through some interfaces, the INDIRECT COUPLING or communication of equipment or unit
Connection, can be electrical, mechanical or other forms.
Above-mentioned unit as illustrated by the separation member, which can be or may not be, to be physically separated, aobvious as unit
The component shown can be or may not be physical unit；Both it can be located in one place, and may be distributed over multiple network lists
In member；Some or all of units can be selected to achieve the purpose of the solution of this embodiment according to the actual needs.
In addition, each functional unit in various embodiments of the present invention can be fully integrated in one processing unit, it can also
To be each unit individually as a unit, can also be integrated in one unit with two or more units；It is above-mentioned
Integrated unit both can take the form of hardware realization, can also realize in the form of hardware adds SFU software functional unit.
Those of ordinary skill in the art will appreciate that: realize power MOSFETB parallel current-sharing in above-described embodiment inverter
This can be accomplished by hardware associated with program instructions for all or part of the steps of circuit, and program above-mentioned can store in calculating
In machine read/write memory medium, which when being executed, executes step including the steps of the foregoing method embodiments；And storage above-mentioned is situated between
Matter include: movable storage device, read-only memory (ROM, Read-Only Memory), random access memory (RAM,
Random Access Memory), the various media that can store program code such as magnetic or disk.
If alternatively, the above-mentioned integrated unit of the present invention is realized in the form of software function module and as independent product
When selling or using, it also can store in a computer readable storage medium.Based on this understanding, the present invention is implemented
Substantially the part that contributes to existing technology can be embodied in the form of software products the technical solution of example in other words,
The computer software product is stored in a storage medium, including some instructions are used so that computer equipment (can be with
It is personal computer, server or network equipment etc.) execute all or part of each embodiment the method for the present invention.
And storage medium above-mentioned includes: that movable storage device, ROM, RAM, magnetic or disk etc. are various can store program code
Medium.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain
Lid is within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (10)
1. power MOSFET parallel current-equalizing circuit in a kind of inverter, which is characterized in that the circuit includes: control module, drives
Dynamic model block, MOSFET module and detection module；
The control module controls the work of entire circuit；
The drive module includes M intelligent drives chip, each intelligent drives chip is corresponding in inverter for driving
Bridge arm, each intelligent drives chip export the adjustable driving signal in the road N to respectively drive N number of paralleling MOS FET branch；
The MOSFET module includes power mosfet switch device and RCD absorbing circuit, and the RCD absorbing circuit is for absorbing
The inverse peak voltage that the power mosfet switch device generates in operating circuit；
The detection module includes Hall sensor and temperature sensor, each MOSFET branch seal in a Hall sensor with
Each branch is detected by the electric current between the power mosfet switch device drain and source electrode, the temperature sensor is used for
Detect the temperature of each power mosfet switch device.
2. power MOSFET parallel current-equalizing circuit in inverter according to claim 1, which is characterized in that each bridge arm
Hall sensor including N number of paralleling MOS FET branch, and N number of paralleling MOS FET branch and the detection module is arranged in series,
Each bridge arm is equipped with a temperature sensor to detect the temperature of power mosfet switch device in the bridge arm.
3. power MOSFET parallel current-equalizing circuit in inverter according to claim 1, which is characterized in that each
3 RCD absorbing circuits are arranged in MOSFET branch, are generated in operating circuit for absorbing the power mosfet switch device
Inverse peak voltage.
4. power MOSFET parallel current-equalizing circuit in inverter according to claim 1, which is characterized in that the detection mould
Block is connect with the drive module and the control module respectively, in the control module output road the M PWM and the drive module
M intelligent drives chip is connected.
5. power MOSFET parallel current-equalizing circuit in inverter according to claim 1, which is characterized in that in single bridge arm
The electric current for flowing through each MOSFET branch carries out isolation detection, and the current signal that will test by the Hall sensor
It is sent respectively to drive the intelligent drives chip of the bridge arm and control module.
6. power MOSFET parallel current-equalizing circuit in inverter according to claim 1, which is characterized in that each power
The grid of switch mosfet element seals in a solid relay, and the solid relay is controlled by the control module,
The control module control is connected with the grid digital controllable resistance of each power mosfet switch element.
7. power MOSFET parallel current-equalizing circuit in inverter according to claim 6, which is characterized in that M intelligence is driven
The chip respectively adjustable road the M PWM of output duty cycle is moved, N number of paralleling MOS FET branch is respectively driven, receives the detection module
Current signal, with each MOSFET branch of determination dynamic and it is static under electric current whether overcurrent and flow.
8. power MOSFET parallel current-equalizing circuit in inverter according to claim 7, which is characterized in that such as each
MOSFET branch electric current under dynamic and static state is in over-current state, then stops output pwm signal；As each MOSFET branch exists
Dynamic and static lower electric current are in uneven stream mode, finely tune each branch PWM duty cycle size to reach equal stream mode.
9. power MOSFET parallel current-equalizing circuit in inverter according to claim 8, which is characterized in that the control mould
Block is used to realize control to inverter and generate the road M complementary pwm signal two-by-two, receives the current signal of the detection module
And temperature signal, the solid relay that seals in of grid in the power mosfet switch element is controlled to reach MOSFET's
Dynamic current equalizing.
10. into inverter described in 9 any one, power MOSFET parallel current-equalizing circuit, feature exist according to claim 1
In M is equal to 6, N and is more than or equal to 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910654830.9A CN110518784A (en) | 2019-07-19 | 2019-07-19 | Power MOSFET parallel current-equalizing circuit in a kind of inverter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910654830.9A CN110518784A (en) | 2019-07-19 | 2019-07-19 | Power MOSFET parallel current-equalizing circuit in a kind of inverter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110518784A true CN110518784A (en) | 2019-11-29 |
Family
ID=68622674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910654830.9A Pending CN110518784A (en) | 2019-07-19 | 2019-07-19 | Power MOSFET parallel current-equalizing circuit in a kind of inverter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110518784A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111200390A (en) * | 2020-02-25 | 2020-05-26 | 中国第一汽车股份有限公司 | High-power inverter control method and device |
| CN112003460A (en) * | 2020-09-07 | 2020-11-27 | 苏州乾能电气有限公司 | Current equalizing method of IGBT parallel circuit and IGBT parallel circuit |
| CN112260523A (en) * | 2020-09-17 | 2021-01-22 | 深圳市禾望电气股份有限公司 | Parallel current sharing system and method of SiC power device and power electronic equipment |
| WO2021109591A1 (en) * | 2019-12-06 | 2021-06-10 | 苏州浪潮智能科技有限公司 | Power source circuit and current-equalizing method |
| CN112964952A (en) * | 2021-02-19 | 2021-06-15 | 山东英信计算机技术有限公司 | Server test system |
| CN113608097A (en) * | 2021-08-03 | 2021-11-05 | 深圳市时代速信科技有限公司 | Device performance detection device and system |
| WO2023087427A1 (en) * | 2021-11-19 | 2023-05-25 | 广东福德电子有限公司 | Switching transistor parallel current sharing verification device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0923664A (en) * | 1995-07-07 | 1997-01-21 | Nippondenso Co Ltd | Inverter device |
| US6201723B1 (en) * | 1999-10-29 | 2001-03-13 | Ericsson Inc. | Simplified current share circuit |
| CN201328073Y (en) * | 2008-11-28 | 2009-10-14 | 深圳市易驱变频技术有限公司 | Frequency converter circuit and frequency converter utilizing same |
| CN103633820A (en) * | 2013-11-28 | 2014-03-12 | 电子科技大学 | IGBT (insulated gate bipolar transistor) parallel current sharing circuit |
| CN107565802A (en) * | 2017-08-25 | 2018-01-09 | 北京精密机电控制设备研究所 | A kind of flow equalizing circuit for high-power parallel IGBT module |
-
2019
- 2019-07-19 CN CN201910654830.9A patent/CN110518784A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0923664A (en) * | 1995-07-07 | 1997-01-21 | Nippondenso Co Ltd | Inverter device |
| US6201723B1 (en) * | 1999-10-29 | 2001-03-13 | Ericsson Inc. | Simplified current share circuit |
| CN201328073Y (en) * | 2008-11-28 | 2009-10-14 | 深圳市易驱变频技术有限公司 | Frequency converter circuit and frequency converter utilizing same |
| CN103633820A (en) * | 2013-11-28 | 2014-03-12 | 电子科技大学 | IGBT (insulated gate bipolar transistor) parallel current sharing circuit |
| CN107565802A (en) * | 2017-08-25 | 2018-01-09 | 北京精密机电控制设备研究所 | A kind of flow equalizing circuit for high-power parallel IGBT module |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021109591A1 (en) * | 2019-12-06 | 2021-06-10 | 苏州浪潮智能科技有限公司 | Power source circuit and current-equalizing method |
| CN111200390A (en) * | 2020-02-25 | 2020-05-26 | 中国第一汽车股份有限公司 | High-power inverter control method and device |
| CN112003460A (en) * | 2020-09-07 | 2020-11-27 | 苏州乾能电气有限公司 | Current equalizing method of IGBT parallel circuit and IGBT parallel circuit |
| CN112260523A (en) * | 2020-09-17 | 2021-01-22 | 深圳市禾望电气股份有限公司 | Parallel current sharing system and method of SiC power device and power electronic equipment |
| CN112260523B (en) * | 2020-09-17 | 2021-08-17 | 深圳市禾望电气股份有限公司 | Parallel current sharing system and method of SiC power device and power electronic equipment |
| CN112964952A (en) * | 2021-02-19 | 2021-06-15 | 山东英信计算机技术有限公司 | Server test system |
| CN113608097A (en) * | 2021-08-03 | 2021-11-05 | 深圳市时代速信科技有限公司 | Device performance detection device and system |
| WO2023087427A1 (en) * | 2021-11-19 | 2023-05-25 | 广东福德电子有限公司 | Switching transistor parallel current sharing verification device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110518784A (en) | Power MOSFET parallel current-equalizing circuit in a kind of inverter | |
| CN203690884U (en) | Overvoltage protection circuit, driver and power supply comprising the same | |
| KR100541724B1 (en) | power supply apparatus for motor and controlling method thereof | |
| WO2022011904A1 (en) | Energy storage system | |
| CN102195506B (en) | The system and method for inactive matrix converter | |
| CN100574063C (en) | The method of crowbar circuit, inverter protector, control and protection inverter bridge | |
| US9705396B2 (en) | Electronic converter circuit system and control method for the electronic converter circuit system | |
| CN105103427A (en) | Insulated gate semiconductor device | |
| CN108322128A (en) | A kind of motor driving protective device, over-voltage protection method, device and air conditioner | |
| CN103956924B (en) | The photovoltaic miniature inverter of double flyback resonance | |
| CN111244992B (en) | Hybrid energy storage unit, cascade type variable current system and charge and discharge control method thereof | |
| CN103493354A (en) | System and method for off-line ups | |
| EP4148964A1 (en) | A method and a device for compensating a faulty switch in a multi-level flying capacitor converter | |
| CN107154726B (en) | Equipment for discharging high-voltage bus | |
| CN101686006A (en) | Device for protection of power factor correction in three phase power supply and control method thereof | |
| CN107425811B (en) | The monitoring device and photovoltaic generating system of photovoltaic module | |
| CN102769336B (en) | Single-phase inverter for emergency power supply | |
| CN110011559A (en) | Isolated inverter | |
| Al-Sheikh et al. | Study on power converters used in hybrid vehicles with monitoring and diagnostics techniques | |
| CN105322773B (en) | Soft-start circuit and its operating method | |
| CN104821627A (en) | Charging and discharging circuit | |
| CN103166199B (en) | A kind of Switching Power Supply and voltage protection method thereof | |
| CN207150418U (en) | Current foldback circuit and motor driver | |
| CN105027376A (en) | Rectifier with indicator switch | |
| CN206977133U (en) | Charging rectifier apparatus and system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191129 |