CN110518078A - A kind of solar cell and preparation method thereof with novel grid line structure - Google Patents
A kind of solar cell and preparation method thereof with novel grid line structure Download PDFInfo
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- CN110518078A CN110518078A CN201910924837.8A CN201910924837A CN110518078A CN 110518078 A CN110518078 A CN 110518078A CN 201910924837 A CN201910924837 A CN 201910924837A CN 110518078 A CN110518078 A CN 110518078A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of solar cell and preparation method thereof with novel grid line structure, in the grid line structure of the solar cell, main grid cable architecture uses and is looped around the one week closed loop main grid cable architecture in cell piece edge, and the both ends of all thin grid line structures of connection, it solves when thin grid line structure and main grid cable architecture that individual radicals occur disconnect, the problem of photogenerated current that do not collect with the thin grid line structure of main grid cable architecture connection cannot be collected by main grid cable architecture, battery entirety photogenerated current is caused to reduce.
Description
Technical field
The present invention relates to technical field of solar cells, more specifically to a kind of sun with novel grid line structure
Battery and preparation method thereof.
Background technique
The layout of battery main gate line is arranged using main gate line in main electrode side in industry at present, and with all thin grid lines
One end is attached.
But chip technology, when making grid line, cell piece surface locally has dirty, unclean and development size of developing
It is less than normal equal abnormal, it will cause thin grid line and disconnect, and then prevent electric current from being transported to main gate line, affect solar cell entirety
Electric current collection and performance.
Also, the grid line of current solar cell is all made of cube structure, comprehensively considers electric current collection and metal shading etc.
Test is optimized in factor, the width and concentration of grid line, still, the grid line upper and lower surface width one of cube structure
It causes, the incident light on grid line surface is reflected back, and cannot increase the light for being incident on solar cell epitaxial layer, to the photoproduction electricity of battery
Stream and battery performance do not improve.
With reference to Fig. 1, Fig. 1 is a kind of grid line structure in the prior art, is the master of battery gate line electrode in current industry
It is laid out, main electrode 2-3, main gate line is not broken to blocking and reflecting for battery effective coverage light is incident in thin grid line
In the case where opening, the photogenerated current on cell piece surface can be effectively collected.
But in chip fabrication processes, because of the exception in terms of process detail, it may appear that the thin grid line of individual radicals and master
Grid line disconnects, and as shown in figure 1 shown in a-quadrant, just will affect the collection of disconnected gate region photogenerated current and the performance of cell piece.
With reference to Fig. 2, Fig. 2 is another grid line structure in the prior art, for the W type of the Azur Space release of Germany
Main grid cable architecture, by main gate line setting in battery effective coverage, electric current collection is caused to thin grid line disconnection is reduced in non-edge position
Missing has some improvement, but it is also only connected to one end of thin grid line, when the thin grid line other end far from main gate line such as
The case where fruit disconnects still will affect the collection of cell piece full wafer photogenerated current.
Also, by main gate line setting in battery effective coverage, and non-edge, it can reflect and block and be incident to battery
The light on piece surface decreases the generation of photogenerated current, influences the performance of solar cell.
Further, it is above-mentioned two in the prior art, with reference to Fig. 3, Fig. 3 be in the prior art a kind of structure of thin grid line show
It is intended to, what thin grid line structure was all made of is cube structure, and upper and lower surface equivalent width is incident to thin grid line surface too
Sunlight is all blocked and is reflected back, and thin grid region fails to contribute photogenerated current.
Summary of the invention
In view of this, to solve the above problems, the present invention provide a kind of solar cell with novel grid line structure and its
Production method, technical solution are as follows:
A kind of solar cell with novel grid line structure, the solar cell include:
Substrate；
Epitaxial layer over the substrate is set；
The closed loop main grid cable architecture in the front edge region of the epitaxial layer is set；
A plurality of thin grid line structure in the closed loop main gate line structural region is set, between a plurality of described thin grid line structure etc.
Every arrangement；
Multiple center electrode structures of epitaxial layer front edge side are set；
Wherein, the closed loop main grid cable architecture is connect with the center electrode structure, the both ends of each thin grid line structure
It is connect respectively with the main grid cable architecture.
Preferably, in above-mentioned solar cell, the upper surface width of the thin grid line structure is less than lower surface width.
Preferably, in above-mentioned solar cell, the thin grid line structure is in the cross sectional shape perpendicular to its extending direction
Trapezoid.
Preferably, in above-mentioned solar cell, the side wall slope of the trapezoid is 60 ° -85 °, including endpoint value.
Preferably, in above-mentioned solar cell, the quantity of the center electrode structure is 2-3, including endpoint value.
Preferably, in above-mentioned solar cell, the solar cell further include:
Cover the antireflective coating of the closed loop main grid structure and the thin grid line structure.
Preferably, in above-mentioned solar cell, the solar cell further include:
The back electrode structure that the substrate deviates from the epitaxial layer side is set.
A kind of production method of the solar cell with novel grid line structure, the production method include:
One substrate is provided；
Epitaxial layer is formed over the substrate；
Closed loop main grid cable architecture, a plurality of thin grid line structure arranged at equal interval and multiple are formed in the front of the epitaxial layer
Center electrode structure, wherein the closed loop main gate line structure is located at fringe region, and the thin grid line structure is located at the closed loop main grid
In the region of cable architecture, multiple center electrode structures are respectively positioned on the side of fringe region；
Wherein, the closed loop main grid cable architecture is connect with the center electrode structure, the both ends of each thin grid line structure
It is connect respectively with the main grid cable architecture.
Preferably, in above-mentioned production method, the epitaxial layer that formed over the substrate includes:
The first sub- battery, the first tunnel junctions, the reflecting layer DBR, the second son are sequentially formed with first direction over the substrate
Battery, the second tunnel junctions, the sub- battery of third and ohmic contact layer；
Wherein, the first direction is directed toward the first sub- battery perpendicular to the substrate, and by the substrate.
Preferably, in above-mentioned production method, the front in the epitaxial layer forms closed loop main grid cable architecture, a plurality of
Thin grid line structure arranged at equal interval and multiple center electrode structures, comprising:
Negative photoresist is coated away from the surface of the sub- battery of the third in the ohmic contact layer；
Processing is exposed to negative photoresist by the way of exposure, to make closed loop main gate line structure graph, more by lithography
Item thin grid line structure figure arranged at equal interval and multiple center electrode structure figures；
Evaporation metal material forms closed loop main grid cable architecture, a plurality of thin grid line structure arranged at equal interval and multiple main electricity
Pole structure, and remove remaining negative photoresist.
Preferably, described that processing is exposed to negative photoresist by the way of exposure in above-mentioned production method, with
Make closed loop main gate line structure graph, a plurality of thin grid line structure figure arranged at equal interval and multiple center electrode structure figures by lithography,
Include:
In the thin grid line structure region, processing is exposed using the exposure light intensity of gradual change degression type；
Wherein, rate of regression 0-10mJ/cm2/s。
Preferably, in above-mentioned production method, the production method further include:
Processing is performed etching to the two side walls of the thin grid line structure, so that the thin grid line structure prolongs perpendicular to it
The cross sectional shape for stretching direction is trapezoid.
Preferably, in above-mentioned production method, the production method further include:
Processing is performed etching to the ohmic contact layer for being exposed to outer, it is outer below the ohmic contact layer to expose
Prolong layer.
Preferably, in above-mentioned production method, the production method further include:
Antireflective coating is deposited in the closed loop main grid structure and the thin grid line structure.
Preferably, in above-mentioned production method, the production method further include:
Back electrode structure is formed away from the side of the epitaxial layer in the substrate.
Compared to the prior art, what the present invention realized has the beneficial effect that
In the grid line structure of the solar cell, main grid cable architecture uses and is looped around the one week closed loop main gate line in cell piece edge
Structure, and the both ends of all thin grid line structures are connected, it solves when the thin grid line structure and main grid cable architecture for individual radicals occur
When disconnection, the photogenerated current that do not collect with the thin grid line structure of main grid cable architecture connection cannot be collected by main grid cable architecture, cause
The problem of battery entirety photogenerated current is reduced.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of grid line structure schematic diagram in the prior art；
Fig. 2 is another grid line structure schematic diagram in the prior art；
Fig. 3 is a kind of structural schematic diagram of thin grid line in the prior art；
Fig. 4 is a kind of structural schematic diagram of the solar cell with novel grid line structure provided in an embodiment of the present invention；
Fig. 5 is a kind of schematic top plan view of the solar cell with novel grid line structure provided in an embodiment of the present invention；
Fig. 6 is a kind of schematic diagram of thin grid line structure provided in an embodiment of the present invention；
Fig. 7 is the structural schematic diagram of another solar cell with novel grid line structure provided in an embodiment of the present invention；
Fig. 8 is a kind of process of the production method of the solar cell with novel grid line structure provided in an embodiment of the present invention
Schematic diagram；
Fig. 9 is a kind of structural schematic diagram of epitaxial layer provided in an embodiment of the present invention；
Figure 10 is that a kind of front in the epitaxial layer provided in an embodiment of the present invention forms closed loop main grid cable architecture, a plurality of
The flow diagram of thin grid line structure and multiple center electrode structures arranged at equal interval；
Figure 11 is the production method of another solar cell with novel grid line structure provided in an embodiment of the present invention
Flow diagram；
Figure 12 is the production method of another solar cell with novel grid line structure provided in an embodiment of the present invention
Flow diagram；
Figure 13 is the production method of another solar cell with novel grid line structure provided in an embodiment of the present invention
Flow diagram；
Figure 14 is the production method of another solar cell with novel grid line structure provided in an embodiment of the present invention
Flow diagram.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
With reference to Fig. 4, Fig. 4 is that a kind of structure of the solar cell with novel grid line structure provided in an embodiment of the present invention is shown
It is intended to.With reference to Fig. 5, Fig. 5 is a kind of vertical view signal of solar cell with novel grid line structure provided in an embodiment of the present invention
Figure.
The solar cell includes:
Substrate；
Epitaxial layer over the substrate is set；
The closed loop main grid cable architecture in the front edge region of the epitaxial layer is set；
A plurality of thin grid line structure in the closed loop main gate line structural region is set, between a plurality of described thin grid line structure etc.
Every arrangement；
Multiple center electrode structures of epitaxial layer front edge side are set；
Wherein, the closed loop main grid cable architecture is connect with the center electrode structure, the both ends of each thin grid line structure
It is connect respectively with the main grid cable architecture.
In this embodiment, main grid cable architecture, which uses, is looped around the one week closed loop main grid cable architecture in cell piece edge, and even
The both ends for connecing all thin grid line structures are solved when thin grid line structure and main grid cable architecture that individual radicals occur disconnect, not
The photogenerated current collected with the thin grid line structure of main grid cable architecture connection cannot be collected by main grid cable architecture, lead to battery entirety light
The problem of raw electric current is reduced.
Also, it can be obtained by experimental verification, the electrode shading ratio of the closed loop main grid cable architecture is 3.597%, conventional main grid
The electrode shading ratio of cable architecture is 3.23%, and shading ratio only increases 0.367%.
Further, it is based on the above embodiment of the present invention, it is wide that the upper surface width of the thin grid line structure is less than lower surface
Degree.
Further, it is based on the above embodiment of the present invention, with reference to Fig. 6, Fig. 6 is a kind of thin grid provided in an embodiment of the present invention
The schematic diagram of cable architecture.
The thin grid line structure is trapezoid in the cross sectional shape perpendicular to its extending direction.
The side wall slope of the trapezoid is 60 ° -85 °, including endpoint value.
In this embodiment, when sunlight is radiated on thin grid line structure, the light in addition to being irradiated to electrode surface is hung down
Outside directly reflecting back, the reflection for exposing to thin grid line structure flat inclined light is increased, light is being incident to solar cell just after reflection
The epitaxial layer in face, increases the absorption of incident light, and then improves the performance of photogenerated current and cell piece.
Further, the above embodiment of the present invention, the solar cell are based on further include:
Cover the antireflective coating of the closed loop main grid structure and the thin grid line structure.
In this embodiment, it can equally increase the absorption of incident light by the way that antireflective coating is arranged, and then improve photoproduction
The performance of electric current and cell piece.
Further, it is based on the above embodiment of the present invention, with reference to Fig. 7, Fig. 7 is another tool provided in an embodiment of the present invention
There is the structural schematic diagram of the solar cell of novel grid line structure.
The solar cell further include:
The back electrode structure that the substrate deviates from the epitaxial layer side is set.
Based on the above-mentioned whole embodiments of the present invention, additionally provide in an alternative embodiment of the invention a kind of with novel grid line
The production method of the solar cell of structure, with reference to Fig. 8, Fig. 8 is provided in an embodiment of the present invention a kind of with novel grid line structure
Solar cell production method flow diagram.
The production method includes:
S101: a substrate is provided.
In this step, the substrate includes but is not limited to Ge substrate.
S102: epitaxial layer is formed over the substrate；
S103: closed loop main grid cable architecture, a plurality of thin grid line structure arranged at equal interval are formed in the front of the epitaxial layer
With multiple center electrode structures, wherein the closed loop main gate line structure is located at fringe region, and the thin grid line structure is located at described close
In the region of ring main grid cable architecture, multiple center electrode structures are respectively positioned on the side of fringe region；
Wherein, the closed loop main grid cable architecture is connect with the center electrode structure, the both ends of each thin grid line structure
It is connect respectively with the main grid cable architecture.
In this embodiment, main grid cable architecture, which uses, is looped around the one week closed loop main grid cable architecture in cell piece edge, and even
The both ends for connecing all thin grid line structures are solved when thin grid line structure and main grid cable architecture that individual radicals occur disconnect, not
The photogenerated current collected with the thin grid line structure of main grid cable architecture connection cannot be collected by main grid cable architecture, lead to battery entirety light
The problem of raw electric current is reduced.
Also, it can be obtained by experimental verification, the electrode shading ratio of the closed loop main grid cable architecture is 3.597%, conventional main grid
The electrode shading ratio of cable architecture is 3.23%, and shading ratio only increases 0.367%.
Further, the above embodiment of the present invention, step S102 are based on specifically:
With reference to Fig. 9, Fig. 9 is a kind of structural schematic diagram of epitaxial layer provided in an embodiment of the present invention.
The first sub- battery, the first tunnel junctions, the reflecting layer DBR, the second son are sequentially formed with first direction over the substrate
Battery, the second tunnel junctions, the sub- battery of third and ohmic contact layer；
Wherein, the first direction is directed toward the first sub- battery perpendicular to the substrate, and by the substrate.
In this embodiment, the epitaxial layer structure mainly includes the first sub- battery, the first tunnel junctions, the reflecting layer DBR,
Two sub- batteries, the second tunnel junctions, the sub- battery of third and ohmic contact layer, can also have other functional layer structures, in this hair
It is only illustrated by way of example in bright embodiment.
Further, the above embodiment of the present invention, step S103 are based on specifically:
With reference to Figure 10, Figure 10 is that a kind of front in the epitaxial layer provided in an embodiment of the present invention forms closed loop main gate line
The flow diagram of structure, a plurality of thin grid line structure and multiple center electrode structures arranged at equal interval.
S1031: negative photoresist is coated away from the surface of the sub- battery of the third in the ohmic contact layer.
In this step, first using acetone and other organic solvent cleaning cell piece front, secondly, there is light-exposed guarantor in coating
The negative photoresist stayed.
S1032: processing is exposed to negative photoresist by the way of exposure, to make closed loop main gate line structure chart by lithography
Shape, a plurality of thin grid line structure figure arranged at equal interval and multiple center electrode structure figures.
S1033: evaporation metal material forms closed loop main grid cable architecture, a plurality of thin grid line structure arranged at equal interval and more
A center electrode structure, and remove remaining negative photoresist.
In this step, using the one or more of them gold of the metals such as electron beam evaporation plating Pd, Ti, Cr, Ag, Au and Al
Belong to, after the negative photoresist for removing reservation, obtains the closed loop main gate line structure and be located at fringe region, the thin grid line structure position
In in the region of the closed loop main grid cable architecture, multiple center electrode structures are respectively positioned on the side of fringe region；
Wherein, the closed loop main grid cable architecture is connect with the center electrode structure, the both ends of each thin grid line structure
It is connect respectively with the main grid cable architecture.
Further, it is based on the above embodiment of the present invention, is carried out in the negative photoresist to the thin grid line structure region
When exposure, processing is exposed using the exposure light intensity of gradual change degression type；
Wherein, rate of regression 0-10mJ/cm2/s。
In this embodiment, negative photoresist uses the light intensity of degression type gradual change, and ultraviolet light is being irradiated to negative photoresist
When, with going deep into for penetration range, light intensity is gradually reduced, and the negative photoresist of light-exposed reservation is not retained originally, to be formed
Up-narrow and down-wide structure can make the thin grid line structure in the section perpendicular to its extending direction by optimizing rate of regression
Shape is trapezoid.The side wall slope of the trapezoid is 60 ° -85 °, including endpoint value.
Further, it is based on the above embodiment of the present invention, with reference to Figure 11, Figure 11 is another kind provided in an embodiment of the present invention
The flow diagram of the production method of solar cell with novel grid line structure.
The production method further include:
S104: performing etching processing to the two side walls of the thin grid line structure, so that the thin grid line structure is vertical
In its extending direction cross sectional shape be trapezoid.
In this embodiment, protection etching processing is carried out to the thin grid line structure of formation, in the middle area of thin grid line structure
Domain is protected, and protection zone is 1/4-3/4 smaller than the surface area of thin grid line structure, including but not limited to uses I2 later
Or the chemical solvents such as KI etch unprotected region, obtain up-narrow and down-wide, and cross section is trapezoid, bevel angle is 60 °-
85 ° of thin gate line electrode.
Further, be based on the above embodiment of the present invention, with reference to Figure 12, Figure 12 be it is provided in an embodiment of the present invention another
The flow diagram of the production method of solar cell with novel grid line structure.
The production method further include:
S105: processing is performed etching to the ohmic contact layer for being exposed to outer, is located under the ohmic contact layer with exposing
The epitaxial layer of side.
In this embodiment, it can absorb due to being exposed to outer ohmic contact layer and be incident to the light of solar cell, it will
It is exposed to outer ohmic contact layer removal, only retains and is located at closed loop main grid cable architecture, a plurality of thin grid line structure arranged at equal interval
With the ohmic contact layer below multiple center electrode structures, and then the electrical property of solar cell can be improved.
Further, be based on the above embodiment of the present invention, with reference to Figure 13, Figure 13 be it is provided in an embodiment of the present invention another
The flow diagram of the production method of solar cell with novel grid line structure.
S106: antireflective coating is deposited in the closed loop main grid structure and the thin grid line structure.
In this embodiment, it can equally increase the absorption of incident light by the way that antireflective coating is arranged, and then improve photoproduction
The performance of electric current and cell piece.
Further, be based on the above embodiment of the present invention, with reference to Figure 14, Figure 14 be it is provided in an embodiment of the present invention another
The flow diagram of the production method of solar cell with novel grid line structure.
S107: back electrode structure is formed away from the side of the epitaxial layer in the substrate.
In this embodiment, after step s 102, before step S103, protection is coated to the epitaxial layer of solar cell
Layer, corrodes the epitaxial growth object of substrate back；
Substrate back is cleaned using acetone and other organic solvent, and uses electron beam and thermal resistance vacuum evaporation back electrode structure.
As can be seen from the above description, the solar cell closed loop main grid cable architecture is other than connecting main electrode, thin grid line knot
The both ends of structure and the two thin grid line at edge are also connected, and the closed loop main grid knot enclosed around chip edge one is formd
Structure is physically seen and forms complete photogenerated current transmission and collection network, solves when the thin grid line for individual radicals occur
When structure and main grid cable architecture disconnect, the photogenerated current that do not collect with the thin grid line structure of main grid cable architecture connection cannot be by main grid
The problem of cable architecture is collected, and battery entirety photogenerated current is caused to reduce.
Also, using trapezoid section thin grid line structure, increase the quantity of illumination for being incident to solar cell, improve into
The absorption of light is penetrated, and then improves the photogenerated current and electrical property of solar cell.
A kind of solar cell with novel grid line structure provided by the present invention and preparation method thereof is carried out above
It is discussed in detail, used herein a specific example illustrates the principle and implementation of the invention, above embodiments
Illustrate to be merely used to help understand method and its core concept of the invention；At the same time, for those skilled in the art, according to
According to thought of the invention, there will be changes in the specific implementation manner and application range, in conclusion the content of the present specification
It should not be construed as limiting the invention.
It should be noted that all the embodiments in this specification are described in a progressive manner, each embodiment weight
Point explanation is the difference from other embodiments, and the same or similar parts between the embodiments can be referred to each other.
For the device disclosed in the embodiment, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, phase
Place is closed referring to method part illustration.
It should also be noted that, herein, relational terms such as first and second and the like are used merely to one
Entity or operation are distinguished with another entity or operation, without necessarily requiring or implying between these entities or operation
There are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant are intended to contain
Lid non-exclusive inclusion, so that the element that the process, method, article or equipment including a series of elements is intrinsic,
It further include either the element intrinsic for these process, method, article or equipments.In the absence of more restrictions,
The element limited by sentence "including a ...", it is not excluded that in the process, method, article or equipment including the element
In there is also other identical elements.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (15)
1. a kind of solar cell with novel grid line structure, which is characterized in that the solar cell includes:
Substrate；
Epitaxial layer over the substrate is set；
The closed loop main grid cable architecture in the front edge region of the epitaxial layer is set；
A plurality of thin grid line structure in the closed loop main gate line structural region is set, and a plurality of thin grid line structure is arranged at equal intervals
Column；
Multiple center electrode structures of epitaxial layer front edge side are set；
Wherein, the closed loop main grid cable architecture is connect with the center electrode structure, the both ends difference of each thin grid line structure
It is connect with the main grid cable architecture.
2. solar cell according to claim 1, which is characterized in that under the upper surface width of the thin grid line structure is less than
Face width.
3. solar cell according to claim 1, which is characterized in that the thin grid line structure is perpendicular to its extending direction
Cross sectional shape be trapezoid.
4. solar cell according to claim 3, which is characterized in that the side wall slope of the trapezoid is 60 ° -85 °, packet
Include endpoint value.
5. solar cell according to claim 1, which is characterized in that the quantity of the center electrode structure is 2-3, including
Endpoint value.
6. solar cell according to claim 1, which is characterized in that the solar cell further include:
Cover the antireflective coating of the closed loop main grid structure and the thin grid line structure.
7. solar cell according to claim 1, which is characterized in that the solar cell further include:
The back electrode structure that the substrate deviates from the epitaxial layer side is set.
8. a kind of production method of the solar cell with novel grid line structure, which is characterized in that the production method includes:
One substrate is provided；
Epitaxial layer is formed over the substrate；
Closed loop main grid cable architecture, a plurality of thin grid line structure arranged at equal interval and multiple main electricity are formed in the front of the epitaxial layer
Pole structure, wherein the closed loop main gate line structure is located at fringe region, and the thin grid line structure is located at the closed loop main grid knot
In the region of structure, multiple center electrode structures are respectively positioned on the side of fringe region；
Wherein, the closed loop main grid cable architecture is connect with the center electrode structure, the both ends difference of each thin grid line structure
It is connect with the main grid cable architecture.
9. production method according to claim 8, which is characterized in that it is described over the substrate formed epitaxial layer include:
Over the substrate with first direction sequentially form the first sub- battery, the first tunnel junctions, the reflecting layer DBR, the second sub- battery,
The sub- battery of second tunnel junctions, third and ohmic contact layer；
Wherein, the first direction is directed toward the first sub- battery perpendicular to the substrate, and by the substrate.
10. manufacturing method according to claim 9, which is characterized in that the front in the epitaxial layer forms closed loop
Main grid cable architecture, a plurality of thin grid line structure arranged at equal interval and multiple center electrode structures, comprising:
Negative photoresist is coated away from the surface of the sub- battery of the third in the ohmic contact layer；
Processing is exposed to negative photoresist by the way of exposure, to make closed loop main gate line structure graph, a plurality of etc. by lithography
Spaced thin grid line structure figure and multiple center electrode structure figures；
Evaporation metal material forms closed loop main grid cable architecture, a plurality of thin grid line structure arranged at equal interval and multiple main electrode knots
Structure, and remove remaining negative photoresist.
11. manufacturing method according to claim 10, which is characterized in that it is described using exposure by the way of to negative photoresist
It is exposed processing, to make closed loop main gate line structure graph, a plurality of thin grid line structure figure arranged at equal interval and multiple by lithography
Center electrode structure figure, comprising:
In the thin grid line structure region, processing is exposed using the exposure light intensity of gradual change degression type；
Wherein, rate of regression 0-10mJ/cm2/s。
12. manufacturing method according to claim 10, which is characterized in that the production method further include:
Processing is performed etching to the two side walls of the thin grid line structure, so that the thin grid line structure is perpendicular to its extension side
To cross sectional shape be trapezoid.
13. production method according to claim 12, which is characterized in that the production method further include:
Processing is performed etching to the ohmic contact layer for being exposed to outer, to expose the extension being located at below the ohmic contact layer
Layer.
14. production method according to claim 13, which is characterized in that the production method further include:
Antireflective coating is deposited in the closed loop main grid structure and the thin grid line structure.
15. manufacturing method according to claim 10, which is characterized in that the production method further include:
Back electrode structure is formed away from the side of the epitaxial layer in the substrate.
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Application publication date: 20191129 |