CN110515223B - Vanadium dioxide-based terahertz dynamic phase modulator - Google Patents
Vanadium dioxide-based terahertz dynamic phase modulator Download PDFInfo
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- CN110515223B CN110515223B CN201910704432.3A CN201910704432A CN110515223B CN 110515223 B CN110515223 B CN 110515223B CN 201910704432 A CN201910704432 A CN 201910704432A CN 110515223 B CN110515223 B CN 110515223B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
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Abstract
A terahertz dynamic phase modulator based on vanadium dioxide belongs to the technical field of electromagnetic functional devices. The phase modulator comprises a dielectric substrate, a metal layer with MXN hollow round holes and a vanadium dioxide-metal mixed control structure, wherein the metal layer is positioned on the dielectric substrate and is provided with the MXN hollow round holes; the vanadium dioxide-metal mixed control structure comprises I-shaped metal and vanadium dioxide arranged at four end points of the I-shaped metal; the conductivity of vanadium dioxide is controlled by externally added laser, so that the resonance frequency change of the phase modulator is realized, and the phase of incident electromagnetic waves is further modulated. According to the terahertz dynamic phase modulator based on vanadium dioxide, the high-transmissivity characteristic of the metal layer supernormal transmission structure with the hollow round holes is utilized, phase modulation larger than 76 degrees/3.2 dB is achieved, meanwhile, the transmissivity can reach about 50%, the phase modulation amplitude is large, and meanwhile, the high transmissivity is guaranteed.
Description
Technical Field
The invention relates to a terahertz phase modulation device, in particular to a dynamic and continuously phase-adjustable super-surface based on vanadium dioxide, and belongs to the technical field of electromagnetic functional devices.
Background
Terahertz waves refer to electromagnetic waves with the frequency within the range of 0.1 THz-10 THz, and the frequency of the electromagnetic waves is between millimeter waves and infrared waves, so far, the terahertz waves are not well developed. The method has potential utilization value in the fields of communication, imaging, life science, space technology, radar technology and the like, and has an extremely important development position.
The terahertz device with dynamic adjustability is a research focus of terahertz functional devices, and the dynamic phase modulation device is an indispensable kind of terahertz dynamic devices. In a communication system, a carrier is usually modulation-coded by phase shift keying, and then information is extracted by coherent demodulation or differential coherent demodulation. The coding mode effectively improves the information transmission rate and has great advantages in noise resistance. In a radar system, a traditional mechanical scanning radar needs a complex feed system and a huge antenna unit, the scanning rate of the traditional mechanical scanning radar is limited by mechanical movement, so that the rate is greatly reduced, and a terahertz radar system has great requirements on small integration and high rate, so that a phased array radar technology needs to be adopted. The phased array radar technology is a technology for shaping and orienting a wave beam by utilizing a dynamic phase modulation device and then scanning in a space, is mainly used for controlling the phase of electromagnetic waves, does not need mechanical movement, meets the requirements of a terahertz radar system, and is a great development direction of modern radar systems.
Aiming at the technical requirements of relevant phase modulation in the field of communication and radar systems, a dynamic phase modulation device with large phase change and small transmission loss becomes a popular research. The dynamically adjustable terahertz device is generally developed based on different super surfaces, and the dynamic change of the terahertz device needs stimulation of external conditions such as a heat source, an electric field, laser and the like. The electromagnetic property variable material in the super surface is controlled by external stimulation, and the electromagnetic properties such as the conductivity, the equivalent dielectric constant or the equivalent magnetic conductivity of the material can be changed, so that the aim of dynamically controlling the static frequency response of the super surface is fulfilled.
The phase change property of vanadium dioxide was discovered in 1959, and the monoclinic crystal phase in the low-temperature state changes from temperature to high-temperature rutile crystal phase, and the phase change temperature is 68 ℃. In the monoclinic phase, vanadium dioxide exhibits an insulator state, whereas in the rutile phase, vanadium dioxide exhibits a metallic state, the conductivity between the two phases varies by about 4 orders of magnitude, and the variation between the two phases is reversible. In addition, the phase change characteristic of vanadium dioxide is also found to occur under electric field stimulation and laser stimulation, and ultrafast modulation (picosecond level) can be realized through laser stimulation phase change, which provides a foundation for terahertz ultrafast functional devices.
Disclosure of Invention
The invention aims to provide a transmission type terahertz phase modulator which is simple in structure, large in phase change per dB, high in phase change linearity and low in loss, aiming at the defects existing in the background technology. The phase modulator combines vanadium dioxide with an artificial super surface, and modulates the phase by using the conductivity change characteristic of the vanadium dioxide.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a terahertz dynamic phase modulator based on vanadium dioxide comprises a dielectric substrate, a metal layer and a vanadium dioxide-metal mixed control structure, wherein the metal layer is positioned on the dielectric substrate and provided with M multiplied by N hollow round holes; the vanadium dioxide-metal mixed control structure comprises I-shaped metal and vanadium dioxide arranged at four end points of the I-shaped metal; the conductivity of vanadium dioxide is controlled by externally added laser, so that the resonance frequency change of the phase modulator is realized, and the phase of incident electromagnetic waves is further modulated.
Furthermore, the dielectric substrate is made of semiconductor materials such as sapphire, silicon, high-resistance silicon, GaAs or silicon carbide.
Furthermore, the I-shaped metal material is Au, Ag, Cu or Al.
Further, the M >2 and the N > 2.
Further, the area of the vanadium dioxide-metal mixed control structure accounts for 1/4-4/5 of the area of the hollow circular hole.
Further, the length a of the vanadium dioxide is 1/8 b-1/2 b, wherein b is the length of the I-shaped metal.
Furthermore, the I-shaped metal is positioned in the center of the hollowed circular hole.
Furthermore, the size of the hollowed-out circular hole can be regulated and controlled according to the required frequency.
Compared with the prior art, the invention has the beneficial effects that:
1. the terahertz dynamic phase modulator based on vanadium dioxide provided by the invention combines a metal layer supernormal transmission structure with a hollow circular hole and a vanadium dioxide-metal mixed control structure, adjusts the high-speed phase change of the vanadium dioxide through laser stimulation, and finally realizes the high-speed phase modulation of terahertz waves.
2. According to the vanadium dioxide-based terahertz dynamic phase modulator, the high-transmissivity characteristic of the metal layer supernormal transmission structure with the hollow round holes is utilized, phase modulation larger than 76 degrees/3.2 dB is achieved, meanwhile, the transmissivity can reach about 50%, the phase modulation amplitude is large, and meanwhile, the large transmissivity is guaranteed.
3. According to the terahertz dynamic phase modulator based on vanadium dioxide, when the vanadium dioxide is stimulated by lasers with different power levels, the conductivity of the vanadium dioxide is changed regularly, and the linear modulation of the phase can be realized.
4. The terahertz dynamic phase modulator based on vanadium dioxide is simple in structure, can be realized by laser etching and fine processing means, is mature in processing technology and is convenient to manufacture.
Drawings
Fig. 1 is a schematic structural diagram of a terahertz dynamic phase modulator based on vanadium dioxide according to the present invention; the composite material comprises a substrate 1, a metal layer 2, an I-shaped metal 3 and vanadium dioxide 4, wherein the substrate 1 is a dielectric substrate, the metal layer 2 is a metal layer with hollow round holes, the metal layer 3 is an I-shaped metal in a hybrid control structure, and the vanadium dioxide 4 is vanadium dioxide in the hybrid control structure;
FIG. 2 is a schematic diagram of a unit structure of a vanadium dioxide-based terahertz dynamic phase modulator provided by the invention;
fig. 3 is a transmission coefficient curve (a) and a transmission phase curve (b) of a unit structure in the terahertz dynamic phase modulator based on vanadium dioxide according to the embodiment of the present invention.
Detailed Description
The technical scheme of the invention is detailed below by combining the accompanying drawings and the embodiment.
The invention provides a vanadium dioxide-based terahertz dynamic phase modulator, which is characterized in that a metal surface (a metal layer with a hollowed circular hole) based on an Extraordinary Transmission (Extraordinary Optical Transmission) principle is designed, then a mixed control structure of metal and vanadium dioxide is designed, the electric conductivity of the vanadium dioxide is changed by adding laser modulation signals with different powers, and finally the change of the scattering property of electromagnetic waves is realized by changing the resonance property of the Extraordinary Transmission, so that the continuous change control of a Transmission phase is realized. The phase shift principle is as follows: after laser signals are incident, vanadium dioxide changes between an insulation state and a metal state through phase change, so that capacitance generated between the hybrid control structure and the extraordinary transmission structure is changed, resonance characteristics of the whole extraordinary transmission structure are changed through the change of capacitance values, and finally large-phase linear modulation of high transmissivity is achieved.
As shown in fig. 1, the structure of the terahertz dynamic phase modulator based on vanadium dioxide is schematically illustrated in the figure; the vanadium dioxide-metal hybrid control structure is positioned in the hollow round hole, wherein the metal structure is in an I shape, and small vanadium dioxide blocks are arranged on four end points of the I-shaped metal; the conductivity of vanadium dioxide is controlled by externally added laser, so that the resonance frequency change of the phase modulator is realized, and the phase of incident electromagnetic waves is further modulated.
As shown in fig. 2, the structure of the terahertz dynamic phase modulator unit based on vanadium dioxide is schematically illustrated in the figure; a vanadium dioxide-metal mixed control structure is arranged in the super-normal transmission hollow circular hole, the metal part of the control structure is in an I shape, and small vanadium dioxide blocks are arranged at four end positions of the I shape and are tightly connected with metal to form an I-shaped integral structure. The processing process comprises the following steps: firstly, etching vanadium dioxide into small blocks by adopting a laser etching method, and then plating a metal part of the control structure and a metal layer with a hollow round hole on the dielectric substrate. When terahertz waves are incident to the unit surface, the long rod part of the control structure forms an inductor L, a capacitor C is formed in a gap between the control structure and the hollow round hole, LC resonance is generated on the surface of the unit structure, and meanwhile the control structure can form dipole resonance. The LC resonance, dipole resonance and extraordinary transmission phenomenon combine to form a high transmission peak on the transmission curve. The frequency point of the high transmission peak is determined by the radius of the hollow round hole with extraordinary transmission, the dimension of the I-shaped metal structure of the control structure and the length and width of the vanadium dioxide, and the highest transmittance is obtained by setting a proper dimension.
The invention provides a vanadium dioxide-based terahertz dynamic phase modulator, which changes the phase of a terahertz transmission wave by changing the conductivity of vanadium dioxide through laser incidence, wherein the change of the conductivity of vanadium dioxide corresponds to different laser incidence powers. The method specifically comprises the following steps: when laser is incident on the vanadium dioxide small block, the vanadium dioxide generates a photoinduced phase change phenomenon, the electric conductivity of the vanadium dioxide is changed within picosecond-level time, namely, the values of inductance L and capacitance C of LC resonance in the unit structure are changed, wherein the main influence is the change of the capacitance C, meanwhile, the resonance characteristic of dipole resonance is changed due to the change of the electric conductivity of the vanadium dioxide, the changes jointly influence the frequency point of the unit structure with the abnormal transmission phenomenon, so that the high transmission peak frequency is blue-shifted, and the transmission wave phase is changed due to the movement of the transmission peak frequency due to the K-K relation, thereby realizing the regulation and control of the phase. Therefore, the conductivity of the vanadium dioxide can be quickly adjusted by externally adding a laser modulation signal, and further the transmission phase can be quickly regulated and controlled.
After the terahertz dynamic phase modulator based on vanadium dioxide is simulated, the effect is obvious, and the feasibility is extremely high. As shown in fig. 3, as the conductivity of vanadium dioxide increases, the frequency of the transmission peak shows a blue shift, the corresponding phase change is greater than 76 °, the corresponding insertion loss is about 3dB, i.e., the transmittance is about 50%, and the phase changes linearly with the conductivity change. Therefore, the phase modulator has the characteristics of high transmissivity and large phase change, and can be applied to a phase shift keying communication system and a phased array radar system.
Although the foregoing material has described in detail embodiments of the present invention, it will be understood that the above embodiments are exemplary and are not to be construed as limiting the present invention, and that modifications and embellishments may be made by those skilled in the art without departing from the principle of the present invention, and that such modifications and embellishments should also be construed as the scope of the present invention.
Claims (6)
1. A terahertz dynamic phase modulator based on vanadium dioxide comprises a dielectric substrate, and is characterized by further comprising a metal layer and a vanadium dioxide-metal mixed control structure, wherein the metal layer is located on the dielectric substrate and provided with hollow round holes; the vanadium dioxide-metal mixed control structure comprises I-shaped metal and vanadium dioxide arranged at four end points of the I-shaped metal; the conductivity of vanadium dioxide is controlled by externally added laser, so that the resonance frequency change of the phase modulator is realized, and the phase of incident electromagnetic waves is further modulated.
2. The vanadium dioxide based terahertz dynamic phase modulator of claim 1, wherein the dielectric substrate is sapphire, silicon, high-resistance silicon, GaAs, or silicon carbide.
3. The vanadium dioxide-based terahertz dynamic phase modulator of claim 1, wherein the "I" shaped metal material is Au, Ag, Cu or Al.
4. The vanadium dioxide-based terahertz dynamic phase modulator of claim 1, wherein the area of the vanadium dioxide-metal mixed control structure accounts for 1/4-4/5 of the area of the hollowed circular hole.
5. The vanadium dioxide-based terahertz dynamic phase modulator according to claim 1, wherein the length a of vanadium dioxide is 1/8 b-1/2 b, wherein b is the length of the I-shaped metal.
6. The vanadium dioxide-based terahertz dynamic phase modulator according to claim 1, wherein the I-shaped metal is located at the center of the hollowed circular hole.
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| CN111367096B (en) * | 2020-03-05 | 2021-09-24 | 电子科技大学 | Terahertz amplitude modulator based on flexible metamaterial |
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| CN112490678B (en) * | 2020-11-12 | 2022-11-01 | 云南师范大学 | VO-based2Broadband terahertz super-surface absorption unit and super-surface absorber |
| CN113437527B (en) * | 2021-07-02 | 2022-06-03 | 浙江工业大学 | All-dielectric tunable electromagnetic induction transparent metamaterial based on quarter-cylinder structure |
| CN113782938B (en) * | 2021-09-15 | 2022-05-27 | 哈尔滨学院 | Annular dipole resonance resonator |
| CN114280725B (en) * | 2021-12-06 | 2023-07-04 | 电子科技大学长三角研究院(湖州) | Terahertz on-chip dynamic transmission structure based on coupling type surface plasmon imitation |
| CN114914670A (en) * | 2022-06-29 | 2022-08-16 | 四川太赫兹通信有限公司 | Terahertz electronic control coding antenna unit and terahertz electronic control coding antenna |
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