CN110491784B - Method for manufacturing chip - Google Patents

Method for manufacturing chip Download PDF

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Publication number
CN110491784B
CN110491784B CN201910349136.6A CN201910349136A CN110491784B CN 110491784 B CN110491784 B CN 110491784B CN 201910349136 A CN201910349136 A CN 201910349136A CN 110491784 B CN110491784 B CN 110491784B
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Prior art keywords
workpiece
modified layer
chip
region
laser processing
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CN110491784A (en
Inventor
淀良彰
赵金艳
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Disco Corp
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Disco Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/782—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Provided is a method for manufacturing chips, which can manufacture a plurality of chips by dividing a plate-shaped workpiece without using an extension piece. The manufacturing method of the chip comprises the following steps: a 1 st laser processing step of irradiating only the chip region with a laser beam having a wavelength that is transparent to the workpiece along a predetermined line of division to form a 1 st modified layer along the predetermined line of division of the chip region; a 2 nd laser processing step of irradiating a laser beam having a wavelength that is transparent to the workpiece along a boundary between the chip region and the peripheral residual region to form a 2 nd modified layer along the boundary; and a dividing step of dividing the work into individual chips by applying a force to the work, wherein the work is divided into individual chips by applying a force by one-time cooling or heating.

Description

Method for manufacturing chip
Technical Field
The present invention relates to a method for manufacturing chips, which divides a plate-like workpiece to manufacture a plurality of chips.
Background
In order to divide a plate-like workpiece (workpiece) represented by a wafer into a plurality of chips, the following methods are known: a modified layer (modified region) modified by multiphoton absorption is formed by condensing a laser beam having a permeability inside a workpiece (for example, see patent document 1). Since the modified layer is brittle as compared with other regions, the object to be processed can be divided into a plurality of chips starting from the modified layer by applying a force to the object to be processed after forming the modified layer along the lines (streets) to divide.
When a force is applied to a workpiece on which a modified layer is formed, for example, a method of adhering an extensible sheet (an extensible tape) to the workpiece and extending the same is adopted (for example, refer to patent document 2). In this method, generally, before a laser beam is irradiated to form a modified layer in a workpiece, an extension sheet is attached to the workpiece, and after the modified layer is formed, the extension sheet is extended to divide the workpiece into a plurality of chips.
Patent document 1: japanese patent laid-open No. 2002-192370
Patent document 2: japanese patent application laid-open No. 2010-206136
However, in the method of expanding the expansion sheet as described above, the expansion sheet after use cannot be reused, and therefore the cost required for manufacturing the chip is also liable to increase. In particular, since the high-performance extension sheet, which is not easily left on the chip as an adhesive material, is expensive, the cost required for manufacturing the chip is increased when such an extension sheet is used.
Disclosure of Invention
The present invention has been made in view of the above-described problems, and an object thereof is to provide a method for manufacturing chips, which can divide a plate-like workpiece into a plurality of chips without using an extension piece.
According to one aspect of the present invention, there is provided a method for manufacturing a chip, including manufacturing a plurality of chips from a workpiece having a chip region and a peripheral remaining region surrounding the chip region, the chip region being divided into a plurality of regions to be the chips by a plurality of intersecting lines, the method comprising: a holding step of directly holding the workpiece by using a holding table; a 1 st laser processing step of irradiating only the chip region of the workpiece along the predetermined dividing line so as to position a converging point of a laser beam having a wavelength that is transparent to the workpiece inside the workpiece held by the holding table after the holding step is performed, forming a 1 st modified layer along the predetermined dividing line of the chip region, and forming the outer peripheral residual region as a reinforcing portion where the 1 st modified layer is not formed; a 2 nd laser processing step of irradiating the laser beam along a boundary between the chip region and the outer peripheral residual region so as to position a converging point of the laser beam having a wavelength transparent to the object to be processed inside the object to be processed held by the holding table, and thereafter forming a 2 nd modified layer along the boundary; a carrying-out step of carrying out the object to be processed from the holding table after the 1 st laser processing step and the 2 nd laser processing step are performed; and a dividing step of dividing the work into the chips by applying a force to the work after the carrying-out step is performed, wherein the work is divided into the chips by applying the force by one cooling or heating.
In one embodiment of the present invention, the method may further include a reinforcement removing step of: the reinforcement portion is removed after the 1 st laser processing step and the 2 nd laser processing step are performed and before the dividing step is performed. In one embodiment of the present invention, the upper surface of the holding table may be made of a soft material, and the front surface side of the workpiece may be held by the soft material in the holding step.
In the method for manufacturing chips according to one embodiment of the present invention, the laser beam is irradiated only to the chip region of the workpiece in a state in which the workpiece is directly held by the holding table to form the 1 st modified layer along the dividing line, the laser beam is irradiated to the boundary between the chip region and the outer peripheral residual region to form the 2 nd modified layer along the boundary, and then the workpiece is divided into the chips by applying a force by one cooling or heating, so that the workpiece is divided into the chips without applying a force to the workpiece by using the expansion sheet. As described above, according to the method for manufacturing chips of one embodiment of the present invention, a plurality of chips can be manufactured by dividing a work as a plate-shaped work without using an extension piece.
In the method for manufacturing a chip according to one embodiment of the present invention, since only the chip region of the workpiece is irradiated with the laser beam to form the 1 st modified layer along the line to be divided and the peripheral residual region is used as the reinforcing portion where the 1 st modified layer is not formed, the chip region is reinforced by the reinforcing portion. Thus, the workpiece is not divided into individual chips by the force applied during conveyance or the like, and the silicon wafer can be appropriately conveyed.
Drawings
Fig. 1 is a perspective view schematically showing a configuration example of a workpiece.
Fig. 2 is a perspective view schematically showing a configuration example of the laser processing apparatus.
Fig. 3 (a) is a cross-sectional view for explaining the holding step, and fig. 3 (B) is a cross-sectional view for explaining the laser processing step.
Fig. 4 is a cross-sectional view for explaining the 2 nd laser processing step.
Fig. 5 (a) is a plan view schematically showing a state of a workpiece after forming a modified layer, and fig. 5 (B) is a cross-sectional view schematically showing a state of the modified layer.
Fig. 6 is a sectional view for explaining the reinforcement portion removal step.
Fig. 7 is a sectional view for explaining the dividing step.
Fig. 8 is a cross-sectional view for explaining a holding step of the modification.
Fig. 9 (a) is a cross-sectional view for explaining the dividing step of the modification, and fig. 9 (B) is a plan view schematically showing a state of the workpiece before the chip region is divided by the dividing step of the modification.
Description of the reference numerals
11: a workpiece (work); 11a: a front face; 11b: a back surface; 11c: a chip region; 11d: a peripheral remainder region; 13: dividing the predetermined line (spacer); 15: a region; 17: a laser beam; 19. 19a, 19b, 19c, 19d: a modified layer; 21: a fluid; 23: cracking; 25: a chip; 2: a laser processing device; 4: a base station; 6: chuck table (holding table); 6a: a holding surface; 6b: an absorption path; 8: a horizontal movement mechanism; 10: an X-axis guide rail; 12: an X-axis movable workbench; 14: an X-axis ball screw; 16: an X-axis pulse motor; 18: an X-axis scale; 20: a Y-axis guide rail; 22: y-axis moving workbench; 24: a Y-axis ball screw; 26: a Y-axis pulse motor; 28: a Y-axis scale; 30: a support table; 32: a valve; 34: a suction source; 36: a support structure; 38: a support arm; 40: a laser irradiation unit; 42: a camera; 44: sheet (porous sheet); 44a: an upper surface; 52: a dividing device; 54: chuck table (holding table); 54a: a holding surface; 54b: an absorption path; 56: a valve; 58: a suction source; 60: a spray nozzle (temperature difference forming unit); 62: a cutting unit; 64: a cutting tool.
Detailed Description
An embodiment of the present invention will be described with reference to the drawings. The method for manufacturing a chip according to the present embodiment includes: a holding step (see fig. 3 a), a 1 st laser processing step (see fig. 3B) and the like), a 2 nd laser processing step (see fig. 4 and the like), a carrying-out step, a reinforcement portion removing step (see fig. 6), and a dividing step (see fig. 7).
In the holding step, a workpiece (workpiece) having a chip region divided into a plurality of regions by a dividing line and a remaining region around the periphery of the chip region is directly held by a chuck table (holding table). In the 1 st laser processing step, a laser beam having a wavelength that is transparent to the workpiece is irradiated, a modified layer (1 st modified layer) is formed along a predetermined division line of the chip region, and the outer peripheral residual region is used as a reinforcing portion where the modified layer is not formed.
In the 2 nd laser processing step, a laser beam having a wavelength that is transparent to the workpiece is irradiated, and a modified layer (2 nd modified layer) is formed along the boundary between the chip region and the outer peripheral residual region. In the carrying-out step, the workpiece is carried out from the holding table. In the reinforcement removing step, the reinforcement is removed from the work. In the dividing step, the workpiece is divided into a plurality of chips by applying a force by one-time cooling or heating. Hereinafter, a method for manufacturing a chip according to the present embodiment will be described in detail.
Fig. 1 is a perspective view schematically showing a configuration example of a workpiece (workpiece) 11 used in the present embodiment. As shown in fig. 1, the workpiece 11 is made of, for example, a semiconductor such as silicon (Si), gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN), or silicon carbide (SiC); sapphire (Al) 2 O 3 ) Dielectrics (insulators) such as soda lime glass, borosilicate glass, and quartz glass; or lithium tantalate (LiTaO) 3 ) Lithium niobate (LiNbO) 3 ) A disk-shaped wafer (substrate) formed of an equal ferroelectric material (ferroelectric crystal).
The front surface 11a side of the workpiece 11 is divided into a plurality of regions 15 to be chips by a plurality of intersecting lines (streets) 13 for dividing. Hereinafter, a substantially circular region including all the plurality of regions 15 to be chips is referred to as a chip region 11c, and a ring-shaped region surrounding the chip region 11c is referred to as an outer peripheral surplus region 11d.
Devices such as an IC (Integrated Circuit: integrated circuit), MEMS (Micro Electro Mechanical Systems: microelectromechanical system), LED (Light Emitting Diode: light emitting Diode), LD (Laser Diode: laser Diode), photodiode (photo Diode), SAW (Surface Acoustic Wave: surface acoustic wave) filter, and BAW (Bulk Acoustic Wave: bulk acoustic wave) filter are formed as necessary in each region 15 in the chip region 11c.
The workpiece 11 is divided along the lines 13 to obtain a plurality of chips. Specifically, when the workpiece 11 is a silicon wafer, a chip functioning as a memory, a sensor, or the like is obtained, for example. In the case where the workpiece 11 is a gallium arsenide substrate, an indium phosphide substrate, or a gallium nitride substrate, a chip functioning as a light emitting element, a light receiving element, or the like is obtained, for example.
When the workpiece 11 is a silicon carbide substrate, a chip functioning as a power device or the like is obtained, for example. When the workpiece 11 is a sapphire substrate, a chip functioning as a light emitting element or the like is obtained, for example. When the workpiece 11 is a glass substrate made of soda lime glass, borosilicate glass, quartz glass, or the like, a chip functioning as an optical member or a cover member (glass cover) is obtained, for example.
When the workpiece 11 is a ferroelectric substrate (ferroelectric crystal substrate) formed of a ferroelectric material such as lithium tantalate or lithium niobate, a chip functioning as a filter, an actuator, or the like is obtained. The material, shape, structure, size, thickness, and the like of the workpiece 11 are not limited. Likewise, the kind, number, shape, configuration, size, arrangement, and the like of devices formed in the region 15 to be the chip are also not limited. It is also possible not to form the device in the area 15 to be the chip.
In the method for manufacturing chips according to the present embodiment, a plurality of chips are manufactured using a disk-shaped silicon wafer as the workpiece 11. Specifically, first, a holding step is performed, and the workpiece 11 is directly held by a chuck table. Fig. 2 is a perspective view schematically showing a configuration example of a laser processing apparatus used in the present embodiment.
As shown in fig. 2, the laser processing apparatus 2 includes a base 4 on which each component is mounted. A horizontal movement mechanism 8 is provided on the upper surface of the base 4, and the horizontal movement mechanism 8 moves a chuck table (holding table) 6 for sucking and holding the workpiece 11 in the X-axis direction (machining feed direction) and the Y-axis direction (index feed direction). The horizontal movement mechanism 8 has a pair of X-axis guide rails 10 fixed to the upper surface of the base 4 substantially parallel to the X-axis direction.
An X-axis moving table 12 is slidably mounted on the X-axis guide rail 10. A nut portion (not shown) is provided on the rear surface side (lower surface side) of the X-axis moving table 12, and an X-axis ball screw 14 substantially parallel to the X-axis guide rail 10 is screwed into the nut portion.
An X-axis pulse motor 16 is connected to one end of the X-axis ball screw 14. The X-axis ball screw 14 is rotated by the X-axis pulse motor 16, so that the X-axis moving table 12 moves along the X-axis guide rail 10 in the X-axis direction. An X-axis scale 18 is provided at a position adjacent to the X-axis guide rail 10, and the X-axis scale 18 is used to detect the position of the X-axis moving table 12 in the X-axis direction.
A pair of Y-axis guide rails 20 substantially parallel to the Y-axis direction are fixed to the front surface (upper surface) of the X-axis moving table 12. A Y-axis moving table 22 is slidably mounted on the Y-axis guide rail 20. A nut portion (not shown) is provided on the rear surface side (lower surface side) of the Y-axis moving table 22, and a Y-axis ball screw 24 substantially parallel to the Y-axis guide rail 20 is screwed into the nut portion.
A Y-axis pulse motor 26 is connected to one end of the Y-axis ball screw 24. The Y-axis ball screw 24 is rotated by the Y-axis pulse motor 26, so that the Y-axis moving table 22 moves along the Y-axis guide rail 20 in the Y-axis direction. A Y-axis scale 28 is provided at a position adjacent to the Y-axis guide rail 20, and the Y-axis scale 28 is used to detect the position of the Y-axis moving table 22 in the Y-axis direction.
A support table 30 is provided on the front side (upper surface side) of the Y-axis movement table 22, and the chuck table 6 is disposed above the support table 30. The front surface (upper surface) of the chuck table 6 serves as a holding surface 6a for sucking and holding the rear surface 11b side (or the front surface 11a side) of the workpiece 11. The holding surface 6a is made of a porous material having high hardness such as alumina. However, the holding surface 6a may be made of a soft material typified by polyethylene, epoxy, or the like.
The holding surface 6a is connected to a suction source 34 (see fig. 3 a) via a suction path 6b (see fig. 3 a, etc.) and a valve 32 (see fig. 3 a, etc.) formed in the chuck table 6. A rotation drive source (not shown) is provided below the chuck table 6, and the chuck table 6 is rotated about a rotation axis substantially parallel to the Z-axis direction by the rotation drive source.
A columnar support structure 36 is provided behind the horizontal movement mechanism 8. A support arm 38 extending in the Y-axis direction is fixed to an upper portion of the support structure 36, and a laser irradiation unit 40 is provided at a distal end portion of the support arm 38, and the laser irradiation unit 40 pulses a laser beam 17 (see fig. 3B) having a wavelength (a wavelength that is not easily absorbed) that is transparent to the workpiece 11, and irradiates the workpiece 11 on the chuck table 6.
A camera 42 is provided adjacent to the laser irradiation unit 40, and the camera 42 photographs the front surface 11a side or the rear surface 11b side of the workpiece 11. For example, when adjusting the positions of the workpiece 11 and the laser irradiation unit 40, an image formed by capturing the workpiece 11 and the like with the camera 42 is used.
The chuck table 6, the horizontal movement mechanism 8, the laser irradiation unit 40, the camera 42, and other components are connected to a control unit (not shown). The control unit controls the respective components so as to appropriately process the workpiece 11.
Fig. 3 (a) is a cross-sectional view for explaining the holding step. In fig. 3 (a), some of the constituent elements are represented by functional blocks. In the holding step, as shown in fig. 3 (a), for example, the back surface 11b of the workpiece 11 is brought into contact with the holding surface 6a of the chuck table 6. Then, the valve 32 is opened, and the negative pressure of the suction source 34 is applied to the holding surface 6a.
Thus, the workpiece 11 is sucked and held on the chuck table 6 with the front surface 11a exposed upward. In the present embodiment, as shown in fig. 3 (a), the chuck table 6 directly holds the rear surface 11b of the workpiece 11. That is, in the present embodiment, it is not necessary to attach an extension piece to the workpiece 11.
After the holding step, a 1 st laser processing step of forming a modified layer (1 st modified layer) by irradiating the laser beam 17 along the planned dividing line 13 and a 2 nd laser processing step of forming a modified layer (2 nd modified layer) by irradiating the laser beam 17 along the boundary between the chip region 11c and the outer peripheral residual region 11d are performed. In the present embodiment, a case will be described in which the 1 st laser processing step is followed by the 2 nd laser processing step.
Fig. 3 (B) is a cross-sectional view for explaining the 1 st laser processing step, fig. 4 is a cross-sectional view for explaining the 2 nd laser processing step, fig. 5 (a) is a plan view schematically showing a state of the workpiece 11 after the formation of the modified layer 19, and fig. 5 (B) is a cross-sectional view schematically showing a state of the modified layer 19. In fig. 3 (B) and 4, some of the constituent elements are represented by functional blocks.
In the 1 st laser processing step, first, the chuck table 6 is rotated, for example, so that the extending direction of the intended dividing line 13 is parallel to the X-axis direction. Next, the chuck table 6 is moved to align the position of the laser irradiation unit 40 on the extension line of the intended dividing line 13. Then, as shown in fig. 3 (B), the chuck table 6 is moved in the X-axis direction (i.e., the direction in which the intended line of division 13 of the object extends).
Then, at the timing when the laser irradiation unit 40 reaches a position immediately above one of the boundaries of the chip region 11c and the outer peripheral remaining region 11d existing at two positions on the target line of division 13, the laser irradiation unit 40 starts to irradiate the laser beam 17 having a wavelength transparent to the workpiece 11. In the present embodiment, as shown in fig. 3 (B), the laser beam 17 is irradiated from the laser irradiation unit 40 disposed above the workpiece 11 toward the front surface 11a of the workpiece 11.
The irradiation of the laser beam 17 is continued until the laser irradiation unit 40 reaches the position immediately above the other one of the boundaries of the chip region 11c and the outer peripheral residual region 11d existing at the two portions on the target division line 13. That is, here, the laser beam 17 is irradiated only into the chip region 11c along the dividing line 13 of the object.
The laser beam 17 is irradiated so that the light-collecting point is positioned at a predetermined depth from the front surface 11a (or the rear surface 11 b) of the workpiece 11. By converging the laser beam 17 having a wavelength that is transparent to the workpiece 11 into the interior of the workpiece 11 in this way, a part of the workpiece 11 can be modified by multiphoton absorption at and in the vicinity of the converging point, thereby forming a modified layer 19 (modified layer 19a, etc.) that is a starting point for division.
In the 1 st laser processing step of the present embodiment, since the laser beam 17 is irradiated only into the chip region 11c along the intended dividing line 13 of the object, the modified layer 19 is formed only into the chip region 11c along the intended dividing line 13 of the object.
That is, as shown in fig. 5 (B), in the 1 st laser processing step, the modified layer 19 is not formed in the outer peripheral remaining region.
After the modified layer 19 is formed at a predetermined depth along the target line of intended division 13, the modified layer 19 is formed at other depth positions along the target line of intended division 13 in the same manner. In the present embodiment, as shown in fig. 5B, for example, the modified layers 19 (modified layers 19a, 19B, 19 c) are formed at three positions having different depths from the front surface 11a (or the rear surface 11B) of the workpiece 11.
However, the number and positions of the modified layers 19 formed along one line of the predetermined dividing lines 13 are not particularly limited. For example, the number of modified layers 19 formed along one predetermined dividing line 13 may be one. It is desirable to form the modified layer 19 under such conditions that the crack reaches the front surface 11a (or the rear surface 11 b). Of course, the modified layer 19 may be formed under the condition that the crack reaches both the front surface 11a and the rear surface 11b. This makes it possible to divide the workpiece 11 more appropriately.
After the desired number of modified layers 19 are formed along the intended dividing line 13 of the object, the above steps are repeated to form modified layers 19 along all other intended dividing lines 13. When the required number of modified layers 19 are formed along all the lines 13 as shown in fig. 5 (a), the 1 st laser processing step ends.
In the 1 st laser processing step, after a desired number of modified layers 19 are formed along one line 13, the same modified layers 19 are formed along the other lines 13, but the order of forming the modified layers 19 is not particularly limited. For example, the modified layer 19 may be formed at the same depth position of all the lines 13 to be divided, and then the modified layer 19 may be formed at other depth positions.
When the workpiece 11 is a silicon wafer, the modified layer 19 is formed under the following conditions, for example.
Processed object: silicon wafer
Wavelength of laser beam: 1340nm
Repetition frequency of laser beam: 90kHz
Output of laser beam: 0.1W to 2W
Movement speed of chuck table (process feed speed): 180mm/s to 1000mm/s, typically 500mm/s
When the workpiece 11 is a gallium arsenide substrate or an indium phosphide substrate, the modified layer 19 is formed under the following conditions, for example.
Processed object: gallium arsenide substrate and indium phosphide substrate
Wavelength of laser beam: 1064nm
Repetition frequency of laser beam: 20kHz
Output of laser beam: 0.1W to 2W
Movement speed of chuck table (process feed speed): 100mm/s to 400mm/s, typically 200mm/s
When the workpiece 11 is a sapphire substrate, the modified layer 19 is formed under the following conditions, for example.
Processed object: sapphire substrate
Wavelength of laser beam: 1045nm
Repetition frequency of laser beam: 100kHz
Output of laser beam: 0.1W to 2W
Movement speed of chuck table (process feed speed): 400mm/s to 800mm/s, typically 500mm/s
When the workpiece 11 is a ferroelectric substrate formed of a ferroelectric material such as lithium tantalate or lithium niobate, the modified layer 19 is formed under the following conditions, for example.
Processed object: lithium tantalate substrate and lithium niobate substrate
Wavelength of laser beam: 532nm
Repetition frequency of laser beam: 15kHz
Output of laser beam: 0.02W to 0.2W
Movement speed of chuck table (process feed speed): 270-420 mm/s, typically 300mm/s
When the workpiece 11 is a glass substrate made of soda lime glass, borosilicate glass, quartz glass, or the like, the modified layer 19 is formed under the following conditions, for example.
Processed object: soda lime glass substrate, borosilicate glass substrate, and quartz glass substrate
Wavelength of laser beam: 532nm
Repetition frequency of laser beam: 50kHz
Output of laser beam: 0.1W to 2W
Movement speed of chuck table (process feed speed): 300mm/s to 600mm/s, typically 400mm/s
When the workpiece 11 is a gallium nitride substrate, the modified layer 19 is formed under the following conditions, for example.
Processed object: gallium nitride substrate
Wavelength of laser beam: 532nm
Repetition frequency of laser beam: 25kHz
Output of laser beam: 0.02W to 0.2W
Movement speed of chuck table (process feed speed): 90 to 600mm/s, typically 150mm/s
When the workpiece 11 is a silicon carbide substrate, the modified layer 19 is formed under the following conditions, for example.
Processed object: silicon carbide substrate
Wavelength of laser beam: 532nm
Repetition frequency of laser beam: 25kHz
Output of laser beam: 0.02W to 0.2W, typically 0.1W
Movement speed of chuck table (process feed speed): 90mm/s to 600mm/s, typically: 90mm/s in the cleavage direction of the silicon carbide substrate and 400mm/s in the non-cleavage direction
In the 1 st laser processing step of the present embodiment, the modified layer 19 (modified layers 19a, 19b, 19 c) is formed only in the chip region 11c along the line to divide 13, and the modified layer 19 is not formed in the outer peripheral residual region 11d, so that the strength of the workpiece 11 is ensured by the outer peripheral residual region 11d. Thus, the workpiece 11 is not divided into individual chips by the force applied during conveyance or the like. In this way, the outer peripheral remaining region 11d after the 1 st laser processing step functions as a reinforcing portion for reinforcing the chip region 11c.
In the 1 st laser processing step of the present embodiment, since the modified layer 19 is not formed in the outer peripheral residual region 11d, for example, even when the crack extending from the modified layer 19 reaches both the front surface 11a and the rear surface 11b and the workpiece 11 is completely divided, each chip does not fall off or scatter. In general, when the modified layer 19 is formed in the workpiece 11, the workpiece 11 expands in the vicinity of the modified layer 19. In the present embodiment, the annular outer peripheral residual region 11d functioning as a reinforcing portion is used to apply an expansion force generated by the formation of the modified layer 19 inward, so that each chip is pressed and prevented from falling off and scattering.
After the 1 st laser processing step, a 2 nd laser processing step is performed. In this 2 nd laser processing step, first, the chuck table 6 is moved so that the position of the laser irradiation unit 40 is aligned on the boundary line between the chip region 11c and the outer peripheral residual region 11d. Then, as shown in fig. 4, the chuck table 6 is rotated while the laser beam 17 having a wavelength that is transparent to the workpiece 11 is irradiated from the laser irradiation unit 40. That is, in the present embodiment, the laser beam 17 is irradiated from the laser irradiation unit 40 disposed above the workpiece 11 toward the front surface 11a of the workpiece 11.
The laser beam 17 is irradiated so that the condensed point is positioned at a predetermined depth from the front surface 11a (or the rear surface 11 b) of the object 11. By converging the laser beam 17 having a wavelength that is transparent to the workpiece 11 into the interior of the workpiece 11 in this way, a part of the workpiece 11 can be modified by multiphoton absorption at and around the converging point, and a modified layer 19 (modified layer 19 d) that is a starting point for division can be formed.
In the 2 nd laser processing step of the present embodiment, the laser beam 17 is irradiated along the boundary between the chip region 11c and the outer peripheral residual region 11d, and thus the modified layer 19 is formed along the boundary. The number and positions of the modified layers 19 formed along the boundary between the chip region 11c and the outer peripheral residual region 11d are not particularly limited. For example, the number of modified layers 19 formed along the boundary may be two or more.
In addition, it is desirable to form the modified layer 19 along the boundary under the condition that the crack reaches the front surface 11a (or the rear surface 11 b). Of course, the modified layer 19 along the boundary may be formed under the condition that the crack reaches both the front surface 11a and the rear surface 11b. This makes it possible to divide the workpiece 11 more appropriately and separate the outer peripheral residual region 11d from the chip region 11c.
The specific conditions and the like for forming the modified layer 19 in the 2 nd laser processing step are not particularly limited. For example, the modified layer 19 along the boundary may be formed under the same conditions as those used for forming the modified layer 19 in the 1 st laser processing step. Of course, the modified layer 19 along the boundary may be formed under different conditions from those used for forming the modified layer 19 in the 1 st laser processing step.
As shown in fig. 5 a and 5B, when the annular modified layer 19 (modified layer 19 d) is formed along the boundary between the chip region 11c and the outer peripheral residual region 11d, the 2 nd laser processing step ends. In the present embodiment, the modified layer 19 (modified layer 19 d) is formed at a position having the same depth as the modified layer 19 (modified layer 19 b) formed in the 1 st laser processing step, and cracks are caused to reach the front surface 11a and the rear surface 11b from the modified layer 19 (modified layer 19 d).
After the 1 st laser processing step and the 2 nd laser processing step, a carry-out step is performed to carry out the workpiece 11 from the chuck table 6. Specifically, for example, the entire front surface 11a of the workpiece 11 is sucked and held by a conveying means (not shown) capable of sucking and holding the entire front surface 11a (or the rear surface 11 b) of the workpiece 11, and then the valve 32 is closed to shut off the negative pressure of the suction source 34, thereby discharging the workpiece 11. In the present embodiment, since the outer peripheral remaining region 11d functions as the reinforcement portion as described above, the workpiece 11 is not divided into individual chips by the force applied during conveyance or the like, and the workpiece 11 can be appropriately conveyed.
After the carry-out step, a reinforcement removing step is performed to remove the reinforcement from the work 11. Fig. 6 is a sectional view for explaining the reinforcement portion removal step. In fig. 6, some of the constituent elements are represented by functional blocks. The reinforcement removing step is performed using, for example, the dividing device 52 shown in fig. 6.
The dividing device 52 has a chuck table (holding table) 54 for sucking and holding the workpiece 11. A part of the upper surface of the chuck table 54 serves as a holding surface 54a for sucking and holding the chip region 11c of the workpiece 11. The holding surface 54a is connected to a suction source 58 via a suction path 54b and a valve 56 formed inside the chuck table 54.
The chuck table 54 is coupled to a rotation driving source (not shown) such as a motor, and rotates about a rotation axis substantially parallel to the vertical direction. The chuck table 54 is supported by a moving mechanism (not shown) and moves in a direction substantially parallel to the holding surface 54a.
In the reinforcement removing step, first, the rear surface 11b of the workpiece 11 is brought into contact with the holding surface 54a of the chuck table 54. Then, the valve 56 is opened, and the negative pressure of the suction source 58 is applied to the holding surface 54a. Thus, the workpiece 11 is sucked and held by the chuck table 54 in a state where the front surface 11a is exposed upward. In the present embodiment, as shown in fig. 6, the chuck table 54 directly holds the rear surface 11b side of the workpiece 11. That is, there is no need to attach an extension piece to the workpiece 11.
Then, an upward force (a force directed away from the holding surface 54 a) acts on the outer peripheral remaining region 11d. As described above, the modified layer 19 (modified layer 19 d) serving as a start point of division is formed at the boundary between the chip region 11c and the outer peripheral residual region 11d. Therefore, by applying an upward force to the outer peripheral residual region 11d, the outer peripheral residual region 11d can be lifted from the chuck table 54 as shown in fig. 6. Thus, only the chip region 11c of the workpiece 11 remains on the chuck table 54.
After the reinforcement portion removing step, a dividing step is performed to divide the work 11 into individual chips. Specifically, for example, a large temperature difference is formed in the workpiece 11 (between the front surface 11a and the rear surface 11 b), and the workpiece 11 is divided by applying a force by thermal shock (thermal shock). Fig. 7 is a sectional view for explaining the dividing step. In fig. 7, some of the constituent elements are represented by functional blocks.
The dividing step continues using the dividing means 52. As shown in fig. 7, the dividing device 52 further has an injection nozzle (temperature difference forming means) 60 disposed above the chuck table 54. In the dividing step of the present embodiment, the cooling fluid 21 is blown from the injection nozzle 60 toward the front surface 11a of the workpiece 11, thereby forming a temperature difference required for generating thermal shock. However, the temperature difference required to generate thermal shock may be formed by blowing the heating fluid 21.
As the cooling fluid 21, for example, a low-temperature liquid such as liquid nitrogen that can absorb heat further by vaporization can be used. Thus, the front surface 11a side of the workpiece 11 is rapidly cooled, and a desired temperature difference is easily formed. Here, the required temperature difference is a temperature difference at which thermal shock exceeding the stress required to fracture the workpiece 11 along the modified layers 19 (modified layers 19a, 19b, 19 c) can be obtained. The temperature difference is determined, for example, by the material and thickness of the workpiece 11, the state of the modified layer 19 (modified layers 19a, 19b, 19 c), and the like.
However, the type, flow rate, and the like of the fluid 21 are not particularly limited. For example, a gas such as air or a liquid such as water which is sufficiently cooled may be used. In the case of using a liquid as the fluid 21, the liquid may be cooled to a low temperature (for example, a temperature about 0.1 to 10 ℃ higher than the freezing point) in advance to such an extent that the liquid is not frozen.
When the workpiece 11 is cooled to form a sufficient temperature difference, the crack 23 extends from the modified layer 19 (modified layers 19a, 19b, 19 c) due to thermal shock, and the workpiece 11 is divided into a plurality of chips 25 along the line 13. As described above, in the present embodiment, the workpiece 11 can be divided into the chips 25 by applying a necessary force by one cooling. In the present embodiment, the thermal shock is generated by rapidly cooling the workpiece 11, but the thermal shock may be generated by rapidly heating the workpiece 11.
As described above, in the method of manufacturing chips according to the present embodiment, in a state in which the workpiece (workpiece) 11 is directly held by the chuck table (holding table) 6, the modified layers 19 (modified layers 19a, 19b, 19 c) along the lines of division 13 are formed by irradiating the laser beam 17 only to the chip region 11c of the workpiece 11, the modified layers 19 (modified layers 19 d) along the boundaries between the chip region 11c and the outer peripheral residual region 11d are formed by irradiating the laser beam 17 to the boundaries, and then the workpiece 11 is divided into the chips 25 by applying a force by one cooling, so that it is not necessary to use an extension sheet for dividing the respective chips 25 in order to apply a force to the workpiece 11. As described above, according to the method of manufacturing chips of the present embodiment, a plurality of chips 25 can be manufactured by dividing a silicon wafer, which is a plate-shaped workpiece 11, without using an extension piece.
In the method of manufacturing a chip according to the present embodiment, only the chip region 11c of the workpiece 11 is irradiated with the laser beam 17 to form the modified layers 19 (modified layers 19a, 19b, 19 c) along the lines to be divided 13, and the outer peripheral residual region 11d is used as a reinforcing portion where the modified layers 19 (modified layers 19a, 19b, 19 c) are not formed, so that the chip region 11c is reinforced by the reinforcing portion. Thus, the workpiece 11 is not divided into the chips 25 by the force applied during conveyance, and the workpiece 11 can be appropriately conveyed.
The present invention is not limited to the description of the above embodiments and the like, and may be variously modified and implemented. For example, in the above embodiment, the 1 st laser processing step is followed by the 2 nd laser processing step, but the 1 st laser processing step may be followed by the 2 nd laser processing step. The 2 nd laser processing step may be performed in the middle of the 1 st laser processing step.
In the above embodiment, the chuck table 6 is used to directly hold the rear surface 11b of the workpiece 11 and the laser beam 17 is irradiated from the front surface 11a side, but the chuck table 6 may be used to directly hold the front surface 11a of the workpiece 11 and the laser beam 17 is irradiated from the rear surface 11b side.
Fig. 8 is a cross-sectional view for explaining a holding step of the modification. In the holding step of this modification, as shown in fig. 8, for example, a chuck table (holding table) 6 having an upper surface formed of a porous sheet (porous sheet) 44 formed of a soft material typified by polyethylene, epoxy, or the like may be used.
In the chuck table 6, the front surface 11a side of the workpiece 11 is sucked and held by the upper surface 44a of the sheet 44. This can prevent breakage of devices and the like formed on the front surface 11a side. The sheet 44 is a part of the chuck table 6, and is reused together with the main body of the chuck table 6 and the like.
However, the upper surface of the chuck table 6 need not be made of the porous sheet 44 described above, but may be made of a soft material at least to such an extent that the devices and the like formed on the front surface 11a side of the workpiece 11 are not damaged. It is desirable that the sheet 44 is detachable from the main body of the chuck table 6, and can be replaced when breakage occurs.
In the above embodiment, the reinforcement removing step is performed after the carry-out step and before the dividing step, but for example, the reinforcement removing step may be performed before the carry-out step after the 1 st laser processing step and the 2 nd laser processing step. In addition, in the case where the reinforcement removing step is performed after the carrying-out step and before the dividing step, there is no need to carry the work 11 after the reinforcement removing step, and thus, it is easy to avoid a problem that the work 11 or the like cannot be properly carried.
Similarly, the reinforcement removing step may be performed after the dividing step. In this case, the chip region 11c and the outer peripheral remaining region 11d are more reliably divided by the thermal shock imparted in the dividing step, so that the reinforcement portion can be more easily removed in the subsequent reinforcement portion removing step.
In addition, the reinforcement removing step may be omitted. In this case, for example, the range in which the modified layer 19 is formed in the 1 st laser processing step and the 2 nd laser processing step may be adjusted so that the width of the reinforcing portion is about 2mm to 3mm from the outer peripheral edge of the workpiece 11. In addition, for example, a groove may be formed in the reinforcement portion as a start point of the division before the chip region 11c is divided in the dividing step.
Fig. 9 (a) is a cross-sectional view for explaining the dividing step of the modification, and fig. 9 (B) is a plan view schematically showing the state of the workpiece 11 before the chip region 11c is divided by the dividing step of the modification. In the dividing step of the modification, before the workpiece 11 is divided into the chips by the dividing device 52, for example, grooves as the start points of the division are formed in the reinforcement portions by the cutting means 62 provided in the dividing device 52.
The cutting unit 62 has a spindle (not shown) as a rotation axis substantially parallel to the holding surface 54a. An annular cutting tool 64 having abrasive grains dispersed in a binder is attached to one end side of the spindle. A rotary drive source (not shown) such as a motor is connected to the other end side of the spindle, and the cutting tool 64 attached to the one end side of the spindle is rotated by a force transmitted from the rotary drive source. The cutting unit 62 is supported by, for example, a lifting mechanism (not shown), and the cutting tool 64 is moved in the vertical direction by the lifting mechanism.
As shown in fig. 9a and 9B, when forming the grooves as the start points of the division, for example, the cutting tool 64 is rotated to cut into the outer peripheral remaining region 11d (i.e., the reinforcing portion). Thereby, the groove 11e as the start point of the division can be formed in the reinforcement portion. It is desirable that the groove 11e be formed along the line 13 for dividing, for example. By forming such grooves 11e, the chip region 11c of the workpiece 11 can be divided together with the outer peripheral surplus region 11d.
In addition, the structures, methods, and the like of the above-described embodiments and modifications may be appropriately modified and implemented as long as they do not depart from the scope of the object of the present invention.

Claims (2)

1. A method for manufacturing a chip, wherein a plurality of chips are manufactured from a workpiece having a chip region and a peripheral remaining region surrounding the chip region, the chip region being divided into a plurality of regions to be the chips by a plurality of intersecting predetermined dividing lines,
the method for manufacturing the chip is characterized by comprising the following steps:
a holding step of directly holding the workpiece by using a holding table;
a 1 st laser processing step of irradiating only the chip region of the workpiece along the predetermined dividing line so as to position a converging point of a laser beam having a wavelength that is transparent to the workpiece inside the workpiece held by the holding table after the holding step is performed, forming a 1 st modified layer along the predetermined dividing line of the chip region, and forming the outer peripheral residual region as a reinforcing portion where the 1 st modified layer is not formed;
a 2 nd laser processing step of irradiating the laser beam along a boundary between the chip region and the outer peripheral residual region so as to position a converging point of the laser beam having a wavelength transparent to the object to be processed inside the object to be processed held by the holding table, and thereafter forming a 2 nd modified layer along the boundary;
a carrying-out step of carrying out the object to be processed from the holding table after the 1 st laser processing step and the 2 nd laser processing step are performed; and
a dividing step of dividing the workpiece into the chips by applying a force to the workpiece after the carrying-out step is performed,
in the dividing step, the workpiece is divided into the chips by applying the force by one-time cooling or heating,
the method for manufacturing the chip further comprises the following reinforcement part removing step: after the 1 st laser processing step and the 2 nd laser processing step are performed and before the dividing step is performed, the reinforcement portion is removed with the 2 nd modified layer as a boundary.
2. The method of manufacturing a chip according to claim 1, wherein,
the upper surface of the holding table is composed of a soft material,
in the holding step, the front side of the workpiece is held by the soft material.
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