CN110488140A - A kind of electromagnet fault detection circuit device and its detection method - Google Patents
A kind of electromagnet fault detection circuit device and its detection method Download PDFInfo
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- CN110488140A CN110488140A CN201910890892.XA CN201910890892A CN110488140A CN 110488140 A CN110488140 A CN 110488140A CN 201910890892 A CN201910890892 A CN 201910890892A CN 110488140 A CN110488140 A CN 110488140A
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- 238000001514 detection method Methods 0.000 title claims abstract description 48
- 239000004065 semiconductor Substances 0.000 claims abstract description 74
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- 150000004706 metal oxides Chemical class 0.000 claims abstract description 57
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- 230000001629 suppression Effects 0.000 claims abstract description 8
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/04—Programme control other than numerical control, i.e. in sequence controllers or logic controllers
- G05B19/042—Programme control other than numerical control, i.e. in sequence controllers or logic controllers using digital processors
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
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Abstract
A kind of electromagnet fault detection circuit device and its detection method, its structure designs advantages of simple, additional power consumption can be reduced, reduce input cost, it is applied widely, the accurate detection of electromagnet open circuit or short trouble can be achieved, it includes Micro-processor MCV, Micro-processor MCV passes through driving circuit respectively, current detection circuit is connect with electromagnet coil, current detection circuit includes resistance R2, operational amplifier U2, driving circuit includes metal-oxide-semiconductor drive module U1, metal oxide semiconductor field effect tube M1, bilateral transient voltage suppression diode TV1, it includes working condition that specific detection method, which includes: electromagnet coil L1, idle state, the starting of S1 Micro-processor MCV, S2 controls electromagnet coil L1 energization and is attracted or disconnects, electromagnet coil L1 is set to be respectively at work State or idle state, S3 judge whether electromagnet coil L1 has short circuit or open-circuit fault.
Description
Technical field
The present invention relates to electromagnet technical field, specially a kind of electromagnet fault detection circuit device and its detection side
Method.
Background technique
Electromagnet is that a kind of be powered generates the device of electromagnetism, is widely used in modern vehicle system, such as in vehicle
Anti-lock, controller is controlled in pull-in control system electromagnet, the electromagnetism of liquid reflux is controlled in exhaust gas aftertreatment system
The solenoid valve of iron and suspension control torsion bar.
These electromagnet carry out control using electronic controller and realize energy converting between mechanical, and electromagnet is generally in iron core
It is externally wrapped with the conductive winding to match with its power, winding coil has magnetic as magnet when conductive winding is alived
Property.Electronic controller passes through the movement to the voltage on-off control realization mechanical device being added on winding coil.It is actually using
In the process, electromagnet causes electromagnetic coil short circuit or opens easily because of durability heat resistance or assembly is lack of standardization etc. is damaged
Road is powered, huge electric current flows through electronic control at this time in electromagnetic coil short circuit if controlling electromagnet by electronic controller
Device, more than electronic controller power limit and damage controller；In electromagnetic coil open circuit, electromagnet is reactionless, can not
Specified target action is completed, because tandem effects may cause the damage of other devices in entire vehicle control system.
Circuit checker is generallyd use in the prior art to detect electromagnet open circuit or short trouble, but at present
The sensor devices such as microswitch are generally connected in common solenoid circuit detection device, the use of sensor device is not only
The complexity of entire circuit structure is increased, and increases additional power consumption, greatly improves input cost, and micro-
Dynamic switch has the characteristics that high sensitivity, and contact spacing is smaller, is generally suitable for Small current control system, and for high-power
The circuit control system of high current is then not suitable for, narrow scope of application, and due to its contact spacing is smaller, operating current also compared with
It is small, therefore when electromagnet breaks down, easily cause fault detection inaccurate because of microswitch misoperation or punch through damage
The problem of occur, therefore, invent the detection that a kind of scope of application is relatively wide, can accurately detect electromagnet coil open circuit or open circuit fault
Device becomes those skilled in the art's urgent problem to be solved.
Summary of the invention
For the apparatus structure existing in the prior art for electromagnet open circuit or short trouble detection, complicated, power disappears
The narrow scope of application of consumption is big, input cost is high problem and the existing electromagnet fault detection with microswitch, event
Hinder the lower problem of detection accuracy, the present invention provides a kind of electromagnet fault detection circuit device, structure design is simple
Rationally, additional power consumption can be reduced, input cost is reduced, it is applied widely, it can be achieved that electromagnet open circuit or short trouble
Accurate detection.
A kind of electromagnet fault detection circuit device comprising Micro-processor MCV, the Micro-processor MCV pass through respectively
Driving circuit, current detection circuit and electromagnet coil connect, which is characterized in that the current detection circuit include resistance R2,
Operational amplifier U2, the driving circuit includes metal-oxide-semiconductor drive module U1, metal oxide semiconductor field effect tube M1, two-way
The pwm signal output port of transient voltage suppressor diode TV1, the Micro-processor MCV connect the metal-oxide-semiconductor drive module U1
One end, the other end of the metal-oxide-semiconductor drive module U1 is separately connected the grid of the metal oxide semiconductor field effect tube M1
Pole, resistance R1 one end, the source electrode of the metal oxide semiconductor field effect tube M1 be separately connected the resistance R2 one end,
The noninverting input of operational amplifier U2, the output end of the operational amplifier U2 connect the ADC sampling of the Micro-processor MCV
Port, the other end of described resistance R1, R2, the reverse input end mouth of operational amplifier U2 are grounded, the metal oxide half
The drain electrode of conductor field-effect tube M1 is separately connected one end of the bilateral transient voltage suppression diode TV1, electromagnet coil L1
One end, the other end of the bilateral transient voltage suppression diode TV1, electromagnet coil L1 the other end connect vpp voltage
Source.
It is further characterized by,
The resistance R1 is current sampling resistor；
A method of electromagnet failure being detected based on foregoing circuit device, electromagnet coil L1 includes two kinds of working conditions: work
Make state, idle state, working condition refers to electromagnet coil L1 with fixed frequency energization excitation to be attracted or release magnet
State, idle state refer to that electromagnet coil L1 and electromagnet disconnect attonity, specifically include following detecting step: S1, Wei Chu
Manage device MCU starting；
S2, control electromagnet coil L1, which are powered, to be attracted or disconnects, and electromagnet coil L1 is made to be respectively at working condition or idle shape
State；S3, judge whether electromagnet coil L1 has short circuit or open-circuit fault；
It is characterized in that, step S2 specifically includes the following steps:
S21, the turn-on and turn-off that metal oxide semiconductor field effect tube M1 is controlled by controller U, pass through metal oxide
The turn-on and turn-off of the turn-on and turn-off control electromagnet coil L1 of semiconductor field M1, are respectively at electromagnet coil
Working condition or idle state；
S22, respectively under working condition or idle state, the modulation time of output pwm signal is controlled by Micro-processor MCV,
By the duty ratio of setting modulation time, the time of metal oxide semiconductor field effect tube M1 turn-on and turn-off is controlled, in turn
The make-and-break time for controlling electromagnet coil L1, specifically includes following two situation:
S221, when electromagnet coil L1 is in running order, flow through electromagnet coil L1 electric current be I；
S222, when electromagnet coil L1 is in idle condition, flow through electromagnet coil L1 electric current be i；
In above-mentioned S221, S222, metal oxide semiconductor field effect tube M1 when electromagnet coil L1 is in running order
Turn-on time, the turn-on time of metal oxide semiconductor field effect tube M1 when being in idle condition greater than electromagnet coil L1,
The size of the electric current of electromagnet coil L1 is flowed through in turn-on time control by controlling electromagnet coil L1, as electromagnet coil L1
The electric current that electromagnet coil L1 is flowed through when in running order is I, is flowed through greater than when electromagnet coil L1 is in idle condition
The electric current of electromagnet coil L1 is i, i.e. I > i；
In step s3, judge electromagnet coil L1 with the presence or absence of short circuit or open-circuit fault, electricity by flowing through the electric current of resistance R1
Stream I or i is delivered in Micro-processor MCV after being amplified by operational amplifier U2 and is compared processing, by electric current I or i with micro-
Preset current threshold is compared in processor MCU, by comparing result judge electromagnetic coil L1 whether have short circuit or
Open-circuit fault.
It is further characterized by step S2, when electromagnet coil L1 is in running order, electric current is by vpp voltage
Source stream goes out, successively through electromagnet coil L1, metal oxide semiconductor field effect tube M1, resistance R1, forming circuit, at this time
Loop current is I；When electromagnet coil L1 is in idle condition, electric current is gone out by vpp voltage source stream, successively through electromagnet coil
L1, metal oxide semiconductor field effect tube M1, resistance R1, forming circuit, at this time loop current be i；
In step s3, the fault current highest threshold value that electromagnet coil L1 is preset in Micro-processor MCV is I1, minimum
Threshold value is I2, when the loop current i in the loop current I or step S22 in step S21 is located at highest threshold value I1 and lowest threshold
When between I2, i.e. when I2 < I < I1 or I2 < i < I1, show that short circuit or open circuit fault do not occur for electromagnet coil L1, as I >
When I1 or i > I1, show that short trouble occurs for electromagnet coil L1, as I < I2 or i < I2, shows that electromagnet coil L1 is sent out
Raw open circuit fault.
Using above structure and above-mentioned fault detection method of the invention, without designing complicated detection circuit or setting
Set sensor device, it can realize electromagnet coil L1 short circuit or open circuit fault detection, the reduction of sensor device is so that electricity
Line structure greatly simplifies, while reducing power consumption and input cost；Electricity can be realized by the present apparatus and fault detection method
Magnet coil L1 short circuit or detection respectively of open circuit fault under working condition or idle state two states, compared to existing biography
The mode of sensor detection, the control of the present apparatus is more flexible, and the accuracy of electromagnet coil L1 fault detection can be improved, and reason exists
Mainly pass through Micro-processor MCV and metal oxide semiconductor field effect tube M1 in the actuation and disconnection of present apparatus electromagnet coil
Control is realized, the turn-on time of metal oxide semiconductor field effect tube M1 is controlled by Micro-processor MCV, to accurately control
The electric current in electromagnet coil L1 is flowed through, the failure current thresholds of electromagnet coil L1 can be according to the specified electricity of electromagnet coil L1
Stream and user set, and therefore, can not only be satisfied with the short circuit or open circuit fault detection of low current electromagnetic coil L1,
It can also be used for larger current electromagnetic coil L1 short circuit or open circuit fault detection, micro process passed through by the electric current of electromagnet coil L1
The electricity of electromagnet coil L1 is flowed through in device MCU control by Micro-processor MCV and metal oxide semiconductor field effect tube M1 control
Stream, can be improved the control precision of electric current, so that the fault detection accuracy of electromagnet coil coil L1 can be improved.
Detailed description of the invention
Fig. 1 is circuit diagram of the invention；
Fig. 2 is metal oxide semiconductor field effect tube when keeping electromagnet coil L1 in running order using apparatus of the present invention
The simulation waveform of M1 gate drive signal (pwm signal)；
Fig. 3 is when keeping electromagnet coil L1 in running order using apparatus of the present invention, and the electric current for flowing through electromagnet coil L1 is imitated
True waveform diagram；
Fig. 4 is metal oxide semiconductor field effect tube when being in idle condition electromagnet coil L1 using apparatus of the present invention
The simulation waveform of M1 gate drive signal (pwm signal)；
Fig. 5 is when being in idle condition electromagnet coil L1 using apparatus of the present invention, and the electric current for flowing through electromagnet coil L1 is imitated
True waveform diagram.
Specific embodiment
See Fig. 1, a kind of electromagnet fault detection circuit device comprising Micro-processor MCV, Micro-processor MCV lead to respectively
Overdrive circuit, current detection circuit and electromagnet coil connect, which is characterized in that current detection circuit includes resistance R2, fortune
Amplifier U2 is calculated, driving circuit includes metal-oxide-semiconductor drive module U1, metal oxide semiconductor field effect tube M1, two-way transient state electricity
Constrain diode TV1 processed, one end of the pwm signal output port connection metal-oxide-semiconductor drive module U1 of Micro-processor MCV, metal-oxide-semiconductor drives
The other end of dynamic model block U1 is separately connected one end of the grid of metal oxide semiconductor field effect tube M1, resistance R1, metal oxygen
The source electrode of compound semiconductor field M1 is separately connected the noninverting input of one end of resistance R2, operational amplifier U2, operation
The ADC sample port of the output end connection Micro-processor MCV of amplifier U2, the other end of resistance R1, R2, operational amplifier U2
Reverse input end mouth is grounded, and the drain electrode of metal oxide semiconductor field effect tube M1 is separately connected bidirectional transient voltage and inhibits two
One end of pole pipe TV1, electromagnet coil L1 one end, the other end, the electromagnet coil of bilateral transient voltage suppression diode TV1
The other end of L1 connects vpp voltage source, and resistance R1 is current sampling resistor；Micro process MCU, operational amplifier in the present embodiment
Existing common technology can be used in U2, metal-oxide-semiconductor drive module U1, controls metal oxygen using the pwm signal of Micro-processor MCV output
The turn-on and turn-off of compound semiconductor field M1, and current signal and threshold current that ADC sample port is inputted are believed
It number is compared and existing common technology can also be used.
The effect of metal-oxide-semiconductor drive module U1 in the present apparatus is to realize the level translation of pwm signal, will be by microprocessor
The level translation of the pwm signal of MCU output is to drive the level signal of metal oxide semiconductor field effect tube M1；Resistance R1 is
Pull down resistor can prevent metal oxide semiconductor field effect tube M1 from misleading；Bilateral transient voltage suppression diode TV1 can be clamped
Position back-emf voltage, acts electromagnetic actuation；Current sampling resistor R2 is current sampling resistor, has the work of series connection partial pressure
With the electric current for then flowing through sampling resistor R2 is identical as the current value for flowing through electromagnet coil L1, according to Ohm's law, for micro-
The current signal of processor MCU samples, and obtains nearly MOS drain terminal voltage, to calculate the electric current for flowing through electromagnet coil L1, In
Electromagnet coil L1 short circuit or open circuit fault additionally use current sampling resistor R2 and operational amplifier U2 when detecting, and pass through operation
Amplifier U2 can amplify the low current signal of the source terminal of metal oxide semiconductor field effect tube M1, and pass through ADC
Sample port is delivered in Micro-processor MCV, carries out digital quantization processing to current analog signal convenient for Micro-processor MCV, because
This can further improve the accuracy of electromagnet coil L1 short circuit or open circuit fault detection data.
Above-mentioned apparatus is applied in Car Electronic Control system, the short circuit of electromagnet coil L1 or open circuit fault detection,
Its detection method is comprising the following specific steps S1, Micro-processor MCV starting；
S2, control electromagnet coil L1, which are powered, to be attracted or disconnects, and electromagnet coil L1 is made to be respectively at working condition or idle shape
State, working condition refer to electromagnet coil L1 with fixed frequency energization excitation to be attracted or the state of release magnet, idle state
Referring to that electromagnet coil L1 and electromagnet disconnect attonity, coil is fully disconnected with electromagnet and will not be attracted when idle state,
And be still powered in idle state with fixed frequency, make between electromagnet coil and electromagnet in the short time tend to be attracted but
Non- attracting state carries out the energization excitation of short time, with reach in the state that coil and electromagnet disconnect detection open circuit or
The purpose of short circuit, specifically includes the following steps:
S21, the turn-on and turn-off that metal oxide semiconductor field effect tube M1 is controlled by controller U, pass through metal oxide
The circulation and cut-off of the turn-on and turn-off control electromagnet coil L1 of semiconductor field M1, makes electromagnet be respectively at work
State or idle state, it is specific: driving signal being sent by Micro-processor MCV and controls metal oxide semiconductor field effect tube
M1 conducting controls electromagnet coil L1 energization by the conducting of metal oxide semiconductor field effect tube M1 and is attracted, makes electromagnet
Coil is in running order, or sends driving signal by Micro-processor MCV and control metal oxide semiconductor field effect tube M1
It is connected in a short time, being connected by the metal oxide semiconductor field effect tube M1 short time, which is in electromagnet coil L1, tends to
It is powered on state, but electromagnet coil L1 is still off-state at this time, so that it is in idle condition electromagnet coil,
S22, respectively under working condition or idle state, the modulation time of output pwm signal is controlled by Micro-processor MCV,
By the duty ratio of setting modulation time, the time of metal oxide semiconductor field effect tube M1 turn-on and turn-off is controlled, in turn
The make-and-break time for controlling electromagnet coil L1, specifically includes following two situation:
S221, when electromagnet coil L1 is in running order, its failure is detected, at this time MOS field
The turn-on time of effect pipe M1 is longer, and the modulation time of output pwm signal is controlled by Micro-processor MCV, is modulated by setting
The duty ratio of time, control metal oxide semiconductor field effect tube M1 is under the on state of long period, and then is controlled
Electromagnet coil L1 is under the working condition of corresponding long period, and the simulation waveform of pwm signal is as shown in Fig. 2, when gold
When belonging to oxide semiconductor field effect pipe M1 conducting, electric current is gone out by vpp voltage source stream, successively through electromagnet coil L1, metal oxygen
Compound semiconductor field M1, resistance R1, be formed into a loop, if loop current is I, electric current I at this time is larger；It is horizontal in Fig. 2
Axis indicates time T, and vertical pivot indicates PWM pulse-width signal, and in the present embodiment, the driving frequency of pwm signal is 25HZ, PWM letter
Number modulation time is set as 40mS, duty ratio 50%, and the time for oxidizing metal object semiconductor field effect transistor M1 conducting is
20ms, as can be seen from Figure 2 the simulation waveform of metal oxide semiconductor field effect tube M1 gate drive signal is square wave；
S31, judge that electromagnet coil L1 passes through with the presence or absence of short circuit or open-circuit fault, electric current I by flowing through the electric current of resistance R1
Be delivered in Micro-processor MCV after operational amplifier U2 amplification and be compared processing, by electric current I in Micro-processor MCV in advance
The current threshold first set is compared, and judges whether electromagnetic coil L1 has short circuit or open-circuit fault by comparing result, if electric
The fault current highest threshold value of magnet coil L1 is I1, lowest threshold I2, when the loop current in step S21 is located at highest threshold
When between value I1 and lowest threshold I2, is i.e. when I2 < I < I1, shows that short circuit or open circuit fault do not occur for electromagnet coil L1, work as I
When > I1, show that short trouble occurs for electromagnet coil L1, as I < I2, shows that open circuit fault, In occur for electromagnet coil L1
Under the fixed frequency of the pwm signal set in step S21, duty ratio and the modulation time conditions that turn on and off, electricity is flowed through
The current simulations waveform diagram of magnet coil L1, can from Fig. 3 as shown in figure 3, horizontal axis indicates that time T, vertical pivot indicate electric current I in Fig. 3
To find out, electric current I is in peaked wave waveform with metal oxide semiconductor field effect tube M1 turn-on and turn-off, with metal oxide
The growth of the turn-on time of semiconductor field M1, the electric current I for flowing through electromagnet coil L1 are gradually increased, until shown in Fig. 3
Peaked wave peak Imax, then as the growth of the turn-off time of metal oxide semiconductor field effect tube M1, flow through electromagnetism
The electric current I of iron coil L1 is gradually reduced, until being zero, metal oxide semiconductor field effect tube M1 is led within the accordingly modulation time
Logical and shutdown, loops back and forth like this.
S222, when electromagnet coil L1 is in idle condition, its failure is detected, it is specific: when electromagnetism iron wire
Circle L1 detects its failure when being in the state of release magnet, at this time metal oxide semiconductor field effect tube M1
Turn-on time is shorter, and the modulation time of output pwm signal is controlled by Micro-processor MCV, passes through the duty of setting modulation time
Than control metal oxide semiconductor field effect tube M1 is under the on state of short period, in metal-oxide semiconductor (MOS)
Under field-effect tube M1 short time conducting effect, electromagnet coil L1 is in the state for tending to conducting, at this time the emulation wave of pwm signal
As shown in figure 4, when metal oxide semiconductor field effect tube M1 is when being connected the short time, electric current is gone out shape figure by vpp voltage source stream,
Successively through electromagnet coil L1, metal oxide semiconductor field effect tube M1, resistance R1, be formed into a loop, if loop current is
I, the value of electric current i are far smaller than the value of electric current I, and horizontal axis indicates that time T, vertical pivot indicate PWM pulse-width signal, this reality in Fig. 4
It applies in example, the driving frequency of pwm signal is 25HZ, and the pwm signal modulation time is set as 40mS, and duty ratio 3% can control gold
The time for belonging to oxide semiconductor field effect transistor M1 conducting is 1.2ms, as can be seen from Figure 2 metal-oxide semiconductor (MOS)
The simulation waveform of field-effect tube M1 gate drive signal is square wave；
S32, judge that electromagnet coil L1 passes through with the presence or absence of short circuit or open-circuit fault, electric current i by flowing through the electric current of resistance R1
Be delivered in Micro-processor MCV after operational amplifier U2 amplification and be compared processing, by electric current i in Micro-processor MCV in advance
The current threshold first set is compared, and judges whether electromagnetic coil L1 has short circuit or open-circuit fault by comparing result, if electric
The fault current highest threshold value of magnet coil L1 is I1, lowest threshold I2, when the loop current i in step S21 is located at highest
When between threshold value I1 and lowest threshold I2, i.e. when I2 < i < I1, show that short circuit or open circuit fault do not occur for electromagnet coil L1,
As i > I1, show that short trouble occurs for electromagnet coil L1, as i < I2, shows that open circuit event occurs for electromagnet coil L1
Barrier, under the fixed frequency of the pwm signal set in step S22, duty ratio and the modulation time conditions that turn on and off, stream
The current simulations waveform diagram of electromagnet coil L1 is crossed as shown in figure 5, horizontal axis indicates time T in Fig. 5, vertical pivot indicates electric current I, from figure
5 can be seen that electric current i with metal oxide semiconductor field effect tube M1 turn-on and turn-off in peaked wave waveform, with metal oxygen
The growth of the turn-on time of compound semiconductor field M1, the electric current i for flowing through electromagnet coil L1 are gradually increased, until Fig. 5
Shown in peaked wave peak value imax, then as the growth of the turn-off time of metal oxide semiconductor field effect tube M1, flow through
The electric current i of electromagnet coil L1 is gradually reduced, until being zero, metal oxide semiconductor field effect tube M1 is in the accordingly modulation time
Interior turn-on and turn-off, loop back and forth like this, thus reach the turn-on and turn-off control of metal oxide semiconductor field effect tube M1,
And then achieve the purpose that the control that electromagnet coil L1 is attracted with the energization of electromagnet or power-off is isolated, pass through Micro-processor MCV
Controllable on or off of the metal oxide semiconductor field effect tube M1 under larger current, therefore the electricity of high current can be met
The requirement of the fault detection of magnet coil L1, and can be according to the big of the rated current of electromagnet coil L1 by Micro-processor MCV
It is small that threshold current is adjusted, so as to meet different electric currents electromagnet coil L1 fault detection, make
Good with flexibility, use scope is wide.
Claims (5)
1. a kind of electromagnet fault detection circuit device comprising Micro-processor MCV, the Micro-processor MCV pass through drive respectively
Dynamic circuit, current detection circuit and electromagnet coil connect, which is characterized in that the current detection circuit includes resistance R2, fortune
Amplifier U2 is calculated, the driving circuit includes metal-oxide-semiconductor drive module U1, metal oxide semiconductor field effect tube M1, two-way wink
State voltage suppression diode TV1, the pwm signal output port of the Micro-processor MCV connect the metal-oxide-semiconductor drive module U1's
One end, the other end of the metal-oxide-semiconductor drive module U1 be separately connected the grid of the metal oxide semiconductor field effect tube M1,
One end of resistance R1, the source electrode of the metal oxide semiconductor field effect tube M1 are separately connected one end of the resistance R2, fortune
The noninverting input of amplifier U2 is calculated, the output end of the operational amplifier U2 connects the ADC sampling end of the Micro-processor MCV
Mouthful, the other end of described resistance R1, R2, the reverse input end mouth of operational amplifier U2 are grounded, and the metal oxide is partly led
The drain electrode of body field-effect tube M1 is separately connected one end of the bilateral transient voltage suppression diode TV1, electromagnet coil L1
One end, the other end of the bilateral transient voltage suppression diode TV1, the other end of electromagnet coil L1 connect vpp voltage source.
2. a kind of electromagnet fault detection circuit device according to claim 1, which is characterized in that the resistance R1 is electricity
Flow sampling resistor.
3. a kind of method based on foregoing circuit device detection electromagnet failure, electromagnet coil L1 includes two kinds of working conditions:
Working condition, idle state, working condition refer to electromagnet coil L1 with fixed frequency energization excitation to be attracted or release magnet
State, idle state refers to that electromagnet coil L1 and electromagnet disconnect attonity, specifically includes following detecting step: S1, micro-
Processor MCU starting；
S2, control electromagnet coil L1, which are powered, to be attracted or disconnects, and electromagnet coil L1 is made to be respectively at working condition or idle shape
State；S3, judge whether electromagnet coil L1 has short circuit or open-circuit fault；
It is characterized in that, step S2 specifically includes the following steps:
S21, the turn-on and turn-off that metal oxide semiconductor field effect tube M1 is controlled by controller U, pass through metal oxide
The turn-on and turn-off of the turn-on and turn-off control electromagnet coil L1 of semiconductor field M1, are respectively at electromagnet coil
Working condition or idle state；
S22, respectively under working condition or idle state, the modulation time of output pwm signal is controlled by Micro-processor MCV,
By the duty ratio of setting modulation time, the time of metal oxide semiconductor field effect tube M1 turn-on and turn-off is controlled, in turn
The make-and-break time for controlling electromagnet coil L1, specifically includes following two situation:
S221, when electromagnet coil L1 is in running order, flow through electromagnet coil L1 electric current be I；
S222, when electromagnet coil L1 is in idle condition, flow through electromagnet coil L1 electric current be i；
In above-mentioned S221, S222, metal oxide semiconductor field effect tube M1 when electromagnet coil L1 is in running order
Turn-on time, the turn-on time of metal oxide semiconductor field effect tube M1 when being in idle condition greater than electromagnet coil L1,
The size of the electric current of electromagnet coil L1 is flowed through in turn-on time control by controlling electromagnet coil L1, as electromagnet coil L1
The electric current that electromagnet coil L1 is flowed through when in running order is I, is flowed through greater than when electromagnet coil L1 is in idle condition
The electric current of electromagnet coil L1 is i, i.e. I > i；
In step s3, judge electromagnet coil L1 with the presence or absence of short circuit or open-circuit fault, electricity by flowing through the electric current of resistance R1
Stream I or i is delivered in Micro-processor MCV after being amplified by operational amplifier U2 and is compared processing, by electric current I or i with micro-
Preset current threshold is compared in processor MCU, by comparing result judge electromagnetic coil L1 whether have short circuit or
Open-circuit fault.
4. the method for detection electromagnet failure according to claim 3, which is characterized in that in step S2, when electromagnetism iron wire
When circle L1 is in running order, electric current is gone out by vpp voltage source stream, successively through electromagnet coil L1, MOS field
Effect pipe M1, resistance R1, forming circuit, at this time loop current be I；When electromagnet coil L1 is in idle condition, electric current
Gone out by vpp voltage source stream, successively through electromagnet coil L1, metal oxide semiconductor field effect tube M1, resistance R1, formed
Circuit, loop current is i at this time.
5. the method for detection electromagnet failure according to claim 3, which is characterized in that in step s3, in micro process
The fault current highest threshold value that electromagnet coil L1 is preset in device MCU is I1, lowest threshold I2, when in step S21
When loop current i in loop current I or step S22 is between highest threshold value I1 and lowest threshold I2, i.e. I2 < I < I1 or
When I2 < i < I1, show that short circuit does not occur for electromagnet coil L1 or open circuit fault shows electromagnet as I > I1 or i > I1
Short trouble occurs for coil L1, as I < I2 or i < I2, shows that open circuit fault occurs for electromagnet coil L1.
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