CN110459956B - Narrow linewidth tunable laser - Google Patents
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- CN110459956B CN110459956B CN201910785255.6A CN201910785255A CN110459956B CN 110459956 B CN110459956 B CN 110459956B CN 201910785255 A CN201910785255 A CN 201910785255A CN 110459956 B CN110459956 B CN 110459956B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4207—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback
- G02B6/4208—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback using non-reciprocal elements or birefringent plates, i.e. quasi-isolators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/40—Transceivers
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Abstract
The application provides a narrow linewidth tunable laser, relates to tunable laser technical field, includes: the device comprises a wavelength locking device, a first semiconductor optical amplifier, a laser silicon-based external cavity, a communication optical chip, a second semiconductor optical amplifier and an optical fiber coupling output device; light beams generated by the laser silicon-based external cavity are reflected back to the laser silicon-based external cavity through the first semiconductor optical amplifier to form light beam oscillation; the light beam generated by the silicon-based external cavity of the laser is subjected to wavelength locking through a wavelength locking device; and the light beam with the locked wavelength is output to the second semiconductor optical amplifier through the communication optical chip, amplified and output by the optical fiber coupling output device. The laser linewidth is controlled to a small level.
Description
Technical Field
The invention relates to the technical field of tunable lasers, in particular to a narrow linewidth tunable laser.
Background
The tunable laser is one of four core devices of a coherent communication optical module, and has irreplaceability, and the performance, cost and integration level of the tunable laser have important influence on the coherent optical module. At present, in the field of silicon optical coherent optical communication, the line width of signal light is required to be less than 100 KHz; the silicon optical chip is required to have an input optical power of about 18dBm due to a large insertion loss.
The design principle of a narrow linewidth tunable laser is shown in fig. 1. 101, 114 are feedback detectors; 102 is an etalon; 103 is a light splitter; 104 is a reflector; 105. 106 is a filter; 107. 109 is a focusing lens; 108 is a gain material; 110 is an optical isolator; 111 is an output fiber; 112. 113 is a resistance. The light generated by the stimulated radiation of the gain area is continuously oscillated and amplified at the end faces of 104 and 108 to generate laser; the line width of the output laser is reduced by using two filters 105 and 106 through a vernier caliper effect, and the output wavelength of the laser can be changed by changing the filter characteristics of the two filters 105 and 106 through controlling the heating power of two resistors 112 and 113.
The narrow linewidth lasers commonly available in the market at present are divided into two main categories, i.e., an internal cavity type and an external cavity type. The inner cavity type means that a reflector forming an optical cavity, a filtering structure and a gain interval are integrated on a III-V chip, and the commonly used filtering and reflecting structure on the III-V chip is a Bragg grating. The inner cavity type narrow linewidth laser has the advantages of high process difficulty, complex feedback control, low output power and wide linewidth. The external cavity type refers to that a reflector, a filter structure and a gain medium are independent parts, laser output is achieved in a coupling packaging mode, the output linewidth of an external cavity type narrow linewidth laser in the current market is generally smaller than that of an internal cavity type laser, in addition, the process requirement of the external cavity type narrow linewidth laser on the gain medium is low, and the external cavity type narrow linewidth laser can be manufactured only by a semiconductor optical amplifier chip. The traditional manufacturing method of the external cavity type narrow linewidth laser is realized by attaching a reflector, a lens and a grating to the outside of a semiconductor amplifier chip, and the laser manufactured by the method has larger volume and is not beneficial to chip integration. The silicon-based external cavity laser can integrate devices for realizing reflection, filtering and wavelength adjustment on a silicon chip, so that the volume of the external cavity laser is greatly reduced, and the silicon-based external cavity laser can be further integrated with a silicon optical chip by benefiting from the development of a silicon optical technology.
A silicon-based external cavity narrow linewidth tunable laser uses a semiconductor optical amplifier for amplifying laser in order to increase the output laser power, but because the end face of the semiconductor optical amplifier has reflection, and the reflected light can be continuously amplified and coupled into a laser optical cavity when reversely propagating, the linewidth of the laser can be widened.
Disclosure of Invention
The invention provides a narrow linewidth tunable laser, which controls the linewidth of laser at a small level.
In order to achieve the purpose of the invention, the technical scheme adopted by the invention is as follows:
in a first aspect, the present invention provides a narrow linewidth tunable laser, comprising: the device comprises a wavelength locking device, a first semiconductor optical amplifier, a laser silicon-based external cavity, a communication optical chip, a second semiconductor optical amplifier and an optical fiber coupling output device;
light beams generated by the laser silicon-based external cavity are reflected back to the laser silicon-based external cavity through the first semiconductor optical amplifier to form light beam oscillation;
the light beam generated by the silicon-based external cavity of the laser is subjected to wavelength locking through a wavelength locking device;
and the light beam with the locked wavelength is output to the second semiconductor optical amplifier through the communication optical chip, amplified and output by the optical fiber coupling output device.
Preferably, the wavelength locker comprises: the device comprises a first detector, an etalon, a first optical splitter, a first focusing lens and a second detector;
the laser device comprises a laser silicon-based external cavity, a first focusing lens, a first detector, a second detector and a second detector, wherein light beams generated by the laser silicon-based external cavity are converged by the first focusing lens and then input into the first optical splitter, the first optical splitting beams transmitted by the first optical splitter are input into the first detector after passing through an etalon, the first detector is used for detecting the optical power of the first optical splitting beams, the second optical splitting beams reflected by the first optical splitter are reflected to the second detector, the second detector is used for detecting the optical power of the second optical splitting beams, and the wavelength is locked by utilizing the photocurrent relation feedback of the first detector and the second detector.
Preferably, the optical fiber coupling-out device includes: the second focusing lens, the second beam splitter, the optical isolator, the third focusing lens, the third detector and the optical fiber;
the light beam amplified by the second semiconductor optical amplifier is input to the second optical splitter after being converged by the second focusing lens, the third light beam transmitted by the second optical splitter is input to the third focusing lens after passing through the optical isolator, and is input to the optical fiber as narrow-linewidth laser output after being converged, and the fourth light beam reflected by the second optical splitter is reflected to the third detector, and the third detector is used for detecting the optical power of the fourth light beam and is used for feedback regulation.
Preferably, the communication optical chip is a silicon-based transceiver chip or a III-V electro-absorption modulator.
Preferably, the silicon-based external cavity of the laser realizes narrow linewidth light beam output and wavelength locking of the laser through two micro-ring filters.
Preferably, the silicon-based external cavity light-transmitting waveguide of the laser is connected with the communication optical chip.
Preferably, the output end of the communication optical chip is attached to the input end of the second semiconductor optical amplifier.
Preferably, the wavelength locking output end of the first semiconductor optical amplifier is coated with an antireflection film, and the micro-ring reflection end of the silicon-based external cavity of the laser is coated with an antireflection film.
Preferably, antireflection films are coated on two end faces of the second semiconductor optical amplifier.
Compared with the prior art, the invention has the following beneficial effects:
1. according to the narrow linewidth tunable laser and the communication optical chip, the silicon-based external cavity is designed on the silicon chip, and due to the fact that the whole insertion loss in the communication optical chip is large, light reflected by the semiconductor optical amplifier at the output end of the communication optical chip can be absorbed in the communication optical chip, normal work of the laser is not affected, and the output linewidth of the laser can be guaranteed to be stable.
2. The silicon-based external cavity is directly connected with the communication optical chip through the waveguide, so that the insertion loss and return loss during coupling are further reduced;
3. according to the invention, the semiconductor optical amplifier is attached to the output end of the communication optical chip and is used for amplifying the optical signal, so that the output power of the communication optical chip can meet the communication requirement; in addition, the line width of the laser is not affected by return loss, and meanwhile, the output optical power of the chip can meet the requirement of coherent optical communication.
Drawings
FIG. 1 is a schematic diagram of a narrow linewidth tunable laser in the related art;
fig. 2 is a schematic structural diagram of a narrow linewidth tunable laser according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a narrow linewidth tunable laser in the related art;
fig. 4 is a schematic diagram of a narrow linewidth tunable laser according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a narrow linewidth tunable laser according to an embodiment of the present invention;
fig. 6 is a schematic diagram of a narrow linewidth tunable laser according to an embodiment of the present invention;
fig. 7 is a schematic diagram of a narrow linewidth tunable laser according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following description of the embodiments of the present invention with reference to the accompanying drawings is provided, and it should be noted that, in the case of conflict, features in the embodiments and the embodiments in the present application may be arbitrarily combined with each other.
As shown in fig. 2, an embodiment of the present invention provides a narrow linewidth tunable laser, including: the wavelength locking device 10, the first semiconductor optical amplifier 50, the laser silicon-based external cavity 60, the communication optical chip 70, the second semiconductor optical amplifier 80 and the optical fiber coupling output device 90;
a light beam generated by the laser silicon-based external cavity 60 is reflected back to the laser silicon-based external cavity 60 through the first semiconductor optical amplifier 50 to form light beam oscillation;
the light beam generated by the laser silicon-based external cavity 60 is subjected to wavelength locking through the wavelength locking device 10;
the light beam with the locked wavelength is output to the second semiconductor optical amplifier 80 through the communication optical chip 70, amplified and output by the optical fiber coupling output device 90.
In the related art, the design of the silicon-based external cavity narrow linewidth tunable laser is shown in fig. 3, and includes: detectors 201, 213, 214, etalon 202, optical splitters 203, 209, focusing lenses 204, 208, 210, silicon-based external cavity 205, semiconductor optical amplifiers 206, 207, optical fiber 211, optical isolator 212. In the silicon-based external cavity 205 shown in fig. 3, the functions of narrow linewidth output and wavelength adjustment of the laser are realized by two micro-ring filters, and the laser is emitted from the right end face of the semiconductor optical amplifier 206 by controlling the reflectivity of the end faces of the silicon-based external cavity 205 and the semiconductor optical amplifier 206, at this time, the emitted laser power is low and does not meet the requirement of coherent optical communication, the laser needs to be amplified by the semiconductor optical amplifier 207, and the amplified light is focused and output by the focusing lens 208. Wherein each detector is used for feedback control. However, the laser linewidth is broadened due to the reflection at the end face of the semiconductor optical amplifier 206 and the reflected light is further amplified and coupled into the laser cavity when propagating in the reverse direction.
Therefore, the silicon-based external cavity adopted by the embodiment of the invention is integrated with the communication optical chip, and the silicon-based external cavity is designed on the silicon chip, so that the light reflected by the semiconductor optical amplifier at the output end of the communication optical chip can be absorbed in the communication optical chip due to the large integral insertion loss in the communication optical chip, the normal work of the laser is not influenced any more, and the stable output line width of the laser can be ensured.
In an embodiment of the present invention, the wavelength locking device 10 includes: the device comprises a first detector, an etalon, a first optical splitter, a first focusing lens and a second detector;
the laser device comprises a laser silicon-based external cavity, a first focusing lens, a first detector, a second detector and a second detector, wherein light beams generated by the laser silicon-based external cavity are converged by the first focusing lens and then input into the first optical splitter, the first optical splitting beams transmitted by the first optical splitter are input into the first detector after passing through an etalon, the first detector is used for detecting the optical power of the first optical splitting beams, the second optical splitting beams reflected by the first optical splitter are reflected to the second detector, the second detector is used for detecting the optical power of the second optical splitting beams, and the wavelength is locked by utilizing the photocurrent relation feedback of the first detector and the second detector.
In this embodiment of the present invention, the optical fiber coupling and outputting device 90 includes: the second focusing lens, the second beam splitter, the optical isolator, the third focusing lens, the third detector and the optical fiber;
the light beam amplified by the second semiconductor optical amplifier is input to the second optical splitter after being converged by the second focusing lens, the third light beam transmitted by the second optical splitter is input to the third focusing lens after passing through the optical isolator, and is input to the optical fiber as narrow-linewidth laser output after being converged, and the fourth light beam reflected by the second optical splitter is reflected to the third detector, and the third detector is used for detecting the optical power of the fourth light beam and is used for feedback regulation.
In the embodiment of the invention, the light reflected by the first optical splitter and the light reflected by the second optical splitter are used for monitoring power by the detector for feedback regulation.
In the embodiment of the present invention, the communication optical chip 70 is a silicon-based transceiver chip or a III-V electro-absorption modulator.
In the embodiment of the present invention, the silicon-based external cavity 60 of the laser implements narrow linewidth light beam output and wavelength locking of the laser through two micro-ring filters.
In the embodiment of the present invention, the optical waveguide of the silicon-based external cavity 60 of the laser is connected to the communication optical chip 70.
In the embodiment of the present invention, the output end of the communication optical chip 70 is attached to the input end of the second semiconductor optical amplifier 80.
In the embodiment of the invention, the wavelength locking output end of the first semiconductor optical amplifier is coated with an antireflection film, and the micro-ring reflection end of the silicon-based external cavity of the laser is coated with an antireflection film.
In the embodiment of the present invention, the left end face of the first semiconductor optical amplifier 50 reflects and the micro-ring filter of the laser silicon-based external cavity 60 reflects, so that a laser optical cavity is formed by the two reflecting surfaces.
In the embodiment of the invention, two end faces of the second semiconductor optical amplifier are coated with antireflection films.
Example 1
As shown in fig. 4, this embodiment illustrates the configuration of a narrow linewidth tunable laser:
in the figure, 301, 314 and 315 are detectors; 302 is an etalon; 303. 310 is a light splitter; 304. 309, 312 are focusing lenses; 305. 308 is a semiconductor optical amplifier; 306 is a laser silicon-based external cavity; 307 is a silicon-based transceiver chip; 311 is an optical isolator; and 313 is an optical fiber.
In this embodiment, the scheme is an integration scheme of the laser silicon-based external cavity 306 and the silicon-based transceiver chip 307, and the reflection and transmission of the semiconductor optical amplifier 305 and the laser silicon-based external cavity 306 are controlled to realize the waveguide output of laser on the right side of the laser silicon-based external cavity 306. In this embodiment, the laser output from the laser silicon-based external cavity 306 is directly input into the silicon-based transceiver chip 307 through the waveguide, and due to the characteristics of large insertion loss, small return loss and the like of the silicon-based transceiver chip 307, the optical power reflected into the laser silicon-based external cavity 306 can be ignored, so the laser is not affected by the reflection return loss.
In addition, since the silicon-based transceiver chip 307 has a requirement on the output optical power, the semiconductor optical amplifier 308 is connected to the output end of the silicon-based transceiver chip 307 for amplifying the output power. At this time, light reflected by the right end face of the semiconductor optical amplifier 308 is also amplified during reverse transmission, but the reflected light is absorbed in the silicon-based transceiver chip 307 after being coupled, and finally the part capable of being coupled into the silicon-based external cavity 306 of the laser can be ignored, so that the reflection of the semiconductor optical amplifier 308 for amplifying an output signal does not affect the line width of the laser.
Through the design, narrow linewidth output of the laser is achieved, high-speed and high-order modulation can be achieved, meanwhile, the output power of the silicon-based transceiver chip 307 is amplified, and transmission requirements are met. In addition, due to the integrated design of the silicon-based external cavity 306 and the silicon-based transceiver chip 307 of the laser, the integral integration level is improved, and the volumes of devices and modules are reduced.
In this embodiment, the silicon-based transceiver chip 307 has a receiving function of receiving the modulated optical signal and converting the modulated optical signal into an electrical signal; the transmitting function is to convert the electric signal into optical signal and transmit;
as shown in fig. 4, light input into the silicon-based transceiver chip 307 from the laser silicon-based external cavity 306 is divided into two paths by a two-in-one coupler, the upper path is a transmitting end and is structured by four MZ-structured modulators, the lower path is a receiving end and is used for demodulating input optical signals, and the structure of the two MZ-structured modulators is two mixers, eight detectors and two TIAs.
Example 2
As shown in fig. 5, this embodiment illustrates the configuration of a narrow linewidth tunable laser:
in the figure, 405, 408 are semiconductor optical amplifiers; 406 is a laser silicon-based external cavity; 403. 410 is a light splitter; 402 is an etalon; 401. 414, 415 are detectors; 404. 409 and 412 are focusing lenses; 407 is a silicon-based transceiver chip; 411 is an optical isolator; 413 is an optical fiber.
In this embodiment, the laser output from the laser silicon external cavity 406 passes through the coupling beam splitter 303, one part is used for wavelength locking detection, and the other part enters the silicon-based transceiver chip 407. Due to the characteristic of large insertion loss and small reflection of the silicon-based transceiver chip 407, the laser is less affected by return loss, and the output laser can be maintained in a narrow line width. The output signal of the silicon-based transceiver chip 407 is amplified by the semiconductor optical amplifier 408 to improve the power of the output signal, and the light reflected by the semiconductor optical amplifier 408 is absorbed by the internal devices of the silicon-based transceiver chip 407, which does not affect the laser.
In this embodiment, the silicon-based transceiver chip 407 has a receiving function of receiving the modulated optical signal and converting the modulated optical signal into an electrical signal; the transmitting function is to convert the electric signal into optical signal and transmit;
as shown in fig. 5, light input into the silicon-based transceiver chip 407 from the laser silicon-based external cavity 406 is divided into two paths by a two-in-two coupler, where the upper path is a transmitting end and has four MZ modulators, and the lower path is a receiving end and is used to demodulate an input optical signal, and the structure includes two mixers, eight detectors, and two TIAs.
Example 3
As shown in fig. 6, this embodiment illustrates the configuration of a narrow linewidth tunable laser:
in the figure, 501, 514 and 515 are detectors; 502 is an etalon; 503. 510 is a beam splitter; 504. 509, 512 are focusing lenses; 505. 508 is a semiconductor optical amplifier; 506 is a laser silicon-based external cavity; 507 is a III-V electroabsorption modulator (EAM); 511 is an optical isolator; 513 is an optical fiber.
This embodiment is a tunable laser design. The reflectivity and the transmissivity of the two sides of the semiconductor optical amplifier 505 and the laser silicon-based external cavity 506 are controlled to realize light output by waveguide on the right side of the laser silicon-based external cavity 506, the output mode spot is controlled by designing the shape of the waveguide, the output laser can be directly coupled into the EAM507, and the light modulated by the EAM507 is amplified by the semiconductor optical amplifier 508. Also, due to the large loss of devices inside the EAM507, light reflected by the semiconductor optical amplifier 508 at the output end is absorbed inside the EAM507, and thus, the laser linewidth is not widened. The EAM507 may be integrated with the semiconductor optical amplifier 508 on the same III-V chip, which may also improve the overall integration.
Example 4
As shown in fig. 7, this embodiment illustrates the configuration of a narrow linewidth tunable laser:
in the figure, 605 and 608 are semiconductor optical amplifiers; 606 is a laser silicon-based external cavity; 603. 610 is a light splitter; 602 is an etalon; 601. 614 and 615 are detectors; 604. 609, 612 are focusing lenses; 607 is a III-V electroabsorption modulator (EAM); 611 is an optical isolator; 613 is an optical fiber.
This embodiment is a tunable laser design. In this embodiment, laser output from the laser silicon external cavity 606 passes through the coupling beam splitter 603, one part of the laser is used for wavelength stabilization detection, the other part of the laser enters the EAM607, and the light modulated by the EAM607 is amplified by the semiconductor optical amplifier 608. Due to the large loss of devices inside the EAM607, the light reflected by the semiconductor optical amplifier 608 at the output end is absorbed inside the EAM607, so that the laser linewidth is not widened. The EAM607 may be integrated with the semiconductor optical amplifier 608 on the same III-V chip, again to improve overall integration.
Although the embodiments of the present invention have been described above, the contents thereof are merely embodiments adopted to facilitate understanding of the technical aspects of the present invention, and are not intended to limit the present invention. It will be apparent to persons skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (9)
1. A narrow linewidth tunable laser, comprising: the device comprises a wavelength locking device, a first semiconductor optical amplifier, a laser silicon-based external cavity, a communication optical chip, a second semiconductor optical amplifier and an optical fiber coupling output device;
light beams generated by the laser silicon-based external cavity are reflected back to the laser silicon-based external cavity through the first semiconductor optical amplifier to form light beam oscillation;
the wavelength locking device is used for splitting a light beam generated by the silicon-based external cavity of the laser to obtain a first split light beam and a second split light beam, and locking the wavelength of the light beam generated by the silicon-based external cavity of the laser according to the optical power relationship of the first split light beam and the second split light beam;
and the light beam with the locked wavelength is output to the second semiconductor optical amplifier through the communication optical chip, amplified and output by the optical fiber coupling output device.
2. The tunable laser of claim 1, wherein the wavelength locking device comprises: the device comprises a first detector, an etalon, a first optical splitter, a first focusing lens and a second detector;
the laser device comprises a laser silicon-based external cavity, a first focusing lens, a first detector, a second detector and a second detector, wherein light beams generated by the laser silicon-based external cavity are converged by the first focusing lens and then input into the first optical splitter, the first optical splitting beams transmitted by the first optical splitter are input into the first detector after passing through an etalon, the first detector is used for detecting the optical power of the first optical splitting beams, the second optical splitting beams reflected by the first optical splitter are reflected to the second detector, the second detector is used for detecting the optical power of the second optical splitting beams, and the wavelength is locked by utilizing the photocurrent relation feedback of the first detector and the second detector.
3. The tunable laser of claim 1, wherein the fiber out-coupling means comprises: the second focusing lens, the second beam splitter, the optical isolator, the third focusing lens, the third detector and the optical fiber;
the light beam amplified by the second semiconductor optical amplifier is input to the second optical splitter after being converged by the second focusing lens, the third light beam transmitted by the second optical splitter is input to the third focusing lens after passing through the optical isolator, and is input to the optical fiber as narrow-linewidth laser output after being converged, and the fourth light beam reflected by the second optical splitter is reflected to the third detector, and the third detector is used for detecting the optical power of the fourth light beam and is used for feedback regulation.
4. The tunable laser of claim 1, wherein the communication optical chip is a silicon-based transceiver chip or a III-V electro-absorption modulator.
5. The tunable laser of claim 1, wherein the laser silicon external cavity achieves laser narrow linewidth beam output and wavelength locking through two micro-ring filters.
6. The tunable laser of claim 1, wherein the laser silicon-based external cavity-pass optical waveguide is connected to a communication optical chip.
7. The tunable laser of claim 1, wherein the output of the communication optical chip is attached to the input of the second semiconductor optical amplifier.
8. The tunable laser of claim 1, wherein the wavelength-locked output of the first semiconductor optical amplifier is coated with an anti-reflection film, and the micro-ring reflective end of the silicon-based external cavity of the laser is coated with an anti-reflection film.
9. The tunable laser of claim 1, wherein both end faces of the second semiconductor optical amplifier are coated with antireflection coatings.
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| CN110932789A (en) * | 2019-12-20 | 2020-03-27 | 武汉光迅科技股份有限公司 | Wavelength tunable device packaging structure |
| US11929592B2 (en) * | 2020-09-17 | 2024-03-12 | Marvell Asia Pte Ltd. | Silicon-photonics-based semiconductor optical amplifier with N-doped active layer |
| CN114894227A (en) * | 2022-07-15 | 2022-08-12 | 安徽至博光电科技股份有限公司 | Optical fiber sensing integrated optical chip and system thereof |
| WO2024103573A1 (en) * | 2022-11-18 | 2024-05-23 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN116577870A (en) * | 2023-05-18 | 2023-08-11 | 希烽光电科技(南京)有限公司 | Wavelength locker on non-thermosensitive chip and method for locking wavelength of laser |
| CN116995526B (en) * | 2023-08-08 | 2024-04-09 | 芯联新(河北雄安)科技有限公司 | Space coupling narrow linewidth semiconductor external cavity laser |
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