CN110459669B - Quasi-one-dimensional nano-structure thermoelectric material, device and preparation method thereof - Google Patents
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Abstract
The invention relates to the field of thermoelectric materials, in particular to a quasi-one-dimensional nano-structure thermoelectric material, a device and a preparation method thereof, wherein the thermoelectric material comprises an insulating substrate, at least two thermoelectric material layers and at least two phonon scattering layers; the surface of the insulating substrate is fully distributed with parallel nano grooves which are periodically arranged, and the cross section of each groove presents a T-shaped undulating structure; the T-shaped undulating structure is used for connecting the thermoelectric material with the insulating substrate, so that the tensile property between the thermoelectric material and the insulating substrate can be increased, the thermoelectric device prepared from the thermoelectric material can be stably used in an environment with high vibration amplitude, the thermoelectric conversion efficiency is high, the thermal stability is good, the thermoelectric material can be popularized and applied on a large scale, and the thermoelectric material is fast to prepare, controllable in structure and convenient for mass production.
Description
Technical Field
The invention relates to the field of thermoelectric materials, in particular to a quasi-one-dimensional nano-structure thermoelectric material, a quasi-one-dimensional nano-structure thermoelectric device and a preparation method of the quasi-one-dimensional nano-structure thermoelectric material.
Background
Thermoelectric materials and devices are materials and devices capable of converting heat and energy, and electricity and heat directly, and it has been a central task in this field to increase thermoelectric material conversion efficiency, namely to determine the increase in the dimensionless performance index ZT value of the conversion efficiency (zt=a2σt/k, where a is the Seebeck coefficient, σ is the electrical conductivity, k is the thermal conductivity, and T is the absolute temperature, where thermal conductivity includes both the electronic thermal conductivity and the lattice thermal conductivity). The higher the ZT value, the better the material properties and the higher the energy conversion efficiency. However, the ZT value of the thermoelectric material is difficult to increase due to the correlation among a, σ and k, and the ZT value of the practical thermoelectric material is only about 1.
Existing theoretical and experimental studies have demonstrated that nanostructures are an effective means of improving thermoelectric material conversion performance. The thermoelectric material with the nano structure can greatly reduce the thermal conductivity (lattice thermal conductivity) by scattering phonons more than electrons through a large number of interfaces in the thermoelectric material, and has little or no influence on the electrical conductivity, so that the ZT value is improved. At present, various thermoelectric materials with nano structures, such as thermoelectric materials doped with nano particles, such as nanowires, nano films, nano multi-layer films and the like, optimize the figure of merit of the materials. Therefore, the difference of scattering wavelengths of phonons and electrons is utilized, and the doping and low-dimension means are used for reducing the thermal conductivity of the material, so that a higher ZT value is obtained, and the method is an important point of research in the field of thermoelectric materials at present. In addition, from the application point of view, the low-dimensional thermoelectric material can realize local spot-cooling (spot-cooling), and if the low-dimensional thermoelectric material and the device to be cooled are integrated together through a semiconductor process, the refrigeration of a single transistor or other elements can be realized, the refrigeration efficiency is improved, the refrigeration power consumption is reduced, and the running speed of the device is improved. Therefore, in recent years, research on the mechanism, material preparation and device aspects of low-dimensional thermoelectric materials has become a hot spot for the development of thermoelectric materials, and the development is rapid.
In its review, m.s. dreschauls et al mentions nanoparticle doped nanocomposites that can reduce thermal conductivity by scattering phonons at interfaces, and increase seebeck coefficient by quantum confinement effect, thereby achieving an increase in ZT value.
A quasi-one-dimensional nano-structure thermoelectric material and a device disclosed in Chinese patent application with publication number of CN101969095A and a preparation method thereof. The thermoelectric material comprises an insulating substrate, at least two thermoelectric material layers and at least two phonon scattering layers; the surface of the insulating substrate is fully distributed with parallel nano grooves which are periodically arranged, and the cross section of each groove presents a rectangular undulating structure; the thermoelectric material layer covers the surface of the substrate, and the cross section of the thermoelectric material layer presents a rectangular undulating periodic structure; the phonon scattering layer covers the surface of the thermoelectric material layer, and the cross section presents a rectangular undulating periodic structure; the thermoelectric material layers and the phonon-scattering layers are alternately covered in a rectangular undulating periodic structure.
According to the quasi-one-dimensional nano-structure thermoelectric material, the device and the preparation method thereof disclosed by the prior art, the thermal conductivity of the material can be reduced, and the thermoelectric conversion efficiency of the material is improved; the thermoelectric conversion efficiency of the prepared device is high; however, in the technical scheme, the connection mode adopted between the thermoelectric material layer and the insulating substrate is alternately covered by the rectangular undulating periodic structure, the adhesion force between the thermoelectric material layer and the insulating substrate is lower, and when the thermoelectric material layer and the insulating substrate are used in an environment with high vibration frequency, the thermoelectric material layer and the insulating substrate are easily separated, so that the thermoelectric device is damaged, the use environment of the thermoelectric device is greatly limited, and the large-scale popularization and application of the thermoelectric device are not facilitated.
Disclosure of Invention
The invention aims to provide a quasi-one-dimensional nano-structure thermoelectric material, a device and a preparation method thereof, so as to solve the problems.
In order to achieve the above purpose, the present invention provides the following technical solutions:
the invention provides a quasi-one-dimensional nano-structure thermoelectric material, which comprises an insulating substrate, at least two thermoelectric material layers and at least two phonon scattering layers; the surface of the insulating substrate is fully distributed with parallel nano grooves which are periodically arranged, and the cross section of each groove presents a T-shaped undulating structure; the thermoelectric material layer covers the surface of the insulating substrate, and the transverse section of the thermoelectric material layer presents a T-shaped undulating periodic structure matched with the groove; the phonon scattering layer covers the surface of the thermoelectric material layer, and the cross section presents a rectangular undulating periodic structure; the thermoelectric material layers and the insulating layers are alternately covered by a T-shaped undulating periodic structure; the width and depth of the nano groove are 14 nm-140 nm; the thickness of the single-layer thermoelectric material layer is 14 nm-140 nm; the thickness of the single-layer phonon scattering layer is 2 nm-50 nm.
Preferably, the number of the thermoelectric material layers is 2-5000; the number of the phonon scattering layers is 2-5000; the insulating substrate is silicon dioxide, aluminum oxide, aluminum nitride, magnesium oxide, mica, polyamide, polybutylene terephthalate, polyethylene naphthalate, polycarbonate, polyamide 6, polyaramid MXD6, polyphenylene sulfide or copolyamide 6-X, wherein x=a natural number between 6 and 12; the thermoelectric material layer is an elemental thermoelectric material or a compound thermoelectric material; the phonon scattering layer is a nanoparticle layer or a continuous insulating material layer.
Preferably, the simple substance thermoelectric material is Bi or Si; the compound thermoelectric material is Bi2Te3 series alloy, coSb3 series alloy, siGe series alloy, biSb series alloy, pbTe series alloy, zn4Sb3 series alloy or MgSi series alloy; the nanoparticle phonon scattering layer is a nanoparticle layer or a nano insulating particle layer, wherein metal particles in the nanoparticle layer are not contacted with each other.
Preferably, the thermoelectric material layer is a p-type thermoelectric material, and the phonon scattering layer is a doped p-type thermoelectric material layer, so as to obtain a p-type quasi-one-dimensional nano-structure thermoelectric material; the thermoelectric material layer is an n-type thermoelectric material, and the phonon scattering layer is a doped n-type thermoelectric material layer, so that the n-type quasi-one-dimensional nano-structure thermoelectric material is obtained.
The invention also provides a preparation method of the quasi-one-dimensional nano-structure thermoelectric material, which comprises the following steps:
1) Cleaning the substrate;
2) Preparing a substrate with rectangular sawtooth-shaped nano grooves: preparing the cleaned substrate into a substrate with rectangular grooves by adopting a traditional photoetching technology, nanoimprint or a method of forming a periodic strip-shaped structure by self when the inside of the polymer film is broken; the width and depth of the rectangular serrated nano grooves are 14 nm-140 nm;
3) Depositing a thermoelectric material layer in the rectangular sawtooth-shaped nano groove by using a physical vapor deposition method or a chemical vapor deposition method on the substrate with the rectangular sawtooth-shaped nano groove; the thickness of the thermoelectric material layer is smaller than the depth of the groove;
4) Filling nano powder which is the same as the insulating substrate material in the rectangular serrated nano groove, and sintering and solidifying the nano powder on the inner wall of the rectangular serrated nano groove by adopting an electron beam sintering method to form a whole with the rectangular serrated nano groove;
5) Etching a rectangular groove on the nano powder sintering and curing layer by adopting a traditional photoetching technology, wherein the width of the rectangular groove is smaller than that of the rectangular sawtooth-shaped nano groove, so that the cross section of the rectangular sawtooth-shaped nano groove presents a T-shaped structure;
6) Depositing a thermoelectric material layer on the substrate with the T-shaped structure sawtooth-shaped nano grooves by using a physical vapor deposition method or a chemical vapor deposition method, and sintering the thermoelectric material layer and the thermoelectric material layer in the T-shaped structure sawtooth-shaped nano grooves into a whole by using an electron beam sintering method;
7) Sputtering a phonon scattering layer on the thermoelectric material layer, wherein the thickness of the phonon scattering layer is smaller than the depth of the thermoelectric material layer; the phonon scattering layer is a nanoparticle layer or a continuous insulating material layer; the thickness of the phonon scattering layer is 2 nm-50 nm; the thickness of the phonon scattering layer is smaller than the depth of the groove;
8) Repeating the operation steps 3) to 7) to obtain the quasi-one-dimensional nano-structure thermoelectric material.
In the step 1), firstly, ultrasonic cleaning is carried out on the cleaning substrate by using a weak base solution to remove oil stains on the surface of the substrate, then ultrasonic cleaning is carried out on the cleaning substrate by using a weak acid solution, and finally, ultrasonic cleaning is carried out on the cleaning substrate by using alcohol and deionized water sequentially; the substrate is glass, polymer, mica, ceramic or silicon wafer with a layer of silicon oxide covered on the surface after heat treatment
The quasi-one-dimensional nano-structure thermoelectric material is applied to preparing thermoelectric devices.
The thermoelectric device is prepared according to the following operation steps: depositing p-type quasi-one-dimensional nano-structure thermoelectric materials and n-type quasi-one-dimensional nano-structure thermoelectric materials into strips by using a shielding method or a photoetching method to obtain p-type strip materials and n-type strip materials which are arranged in parallel at intervals; plating a blocking layer and a connecting electrode at the junction of the two ends of the p-type strip material and the n-type strip material to form a thermoelectric pair; the barrier layer is tungsten, molybdenum, nickel, titanium or alloys thereof; the connecting electrode is copper, gold, nickel, aluminum or alloys thereof; and connecting a plurality of thermoelectric pairs in parallel or in series to obtain the thermoelectric device.
The invention applies the most mature physical vapor coating technology in the industry at present, combines the substrate with special nano structure, the sputtering technology and the material combination to prepare the quasi-one-dimensional nanowire thermoelectric material, and prepares the material into thermoelectric devices, and the prepared devices have the characteristics of rapid preparation process, low cost, controllable structure and good thermal stability.
Compared with the prior art, the invention has the beneficial effects that: according to the invention, the T-shaped undulating structure is used for connecting the thermoelectric material with the insulating substrate, so that the tensile property between the thermoelectric material and the insulating substrate can be increased, the thermoelectric device prepared from the thermoelectric material can be stably used in an environment with high vibration amplitude, the thermoelectric conversion efficiency is high, the thermal stability is good, the large-scale popularization and application can be realized, and when the thermoelectric material is prepared by the preparation method, the preparation is quick, the structure is controllable, and the large-scale mass production is convenient.
Drawings
FIG. 1 is a schematic diagram of a quasi-one-dimensional nanostructured thermoelectric material according to the present invention;
FIG. 2 is a schematic structural diagram of a substrate with rectangular sawtooth-shaped nano grooves prepared in step 2) in a method for preparing a quasi-one-dimensional nano-structured thermoelectric material according to the present invention;
FIG. 3 is a schematic structural diagram of a substrate prepared after the operation step 3) in the preparation method of a quasi-one-dimensional nano-structured thermoelectric material according to the present invention;
FIG. 4 is a schematic structural diagram of a substrate prepared after operation 4) in the preparation method of a quasi-one-dimensional nano-structured thermoelectric material according to the present invention;
FIG. 5 is a schematic structural diagram of a substrate prepared after operation 5) in a method for preparing a quasi-one-dimensional nanostructured thermoelectric material according to the present invention;
FIG. 6 is a schematic structural diagram of a substrate prepared after operation 6) in a method for preparing a quasi-one-dimensional nanostructured thermoelectric material according to the present invention;
FIG. 7 is a schematic structural diagram of a substrate prepared after the operation step 7) in the preparation method of a quasi-one-dimensional nano-structured thermoelectric material according to the present invention;
in the figure: an insulating substrate 1, a trench 2, a thermoelectric material 3, and a phonon scattering layer 4.
Detailed Description
The following description of the embodiments of the present invention will be made in detail and with reference to the accompanying drawings, wherein it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, are intended to fall within the scope of the present invention.
The invention provides a quasi-one-dimensional nano-structure thermoelectric material 3, which comprises an insulating substrate 1, at least two thermoelectric material 3 layers and at least two phonon scattering layers 4; the surface of the insulating substrate 1 is fully distributed with parallel nano grooves 2 which are periodically arranged, and the cross section of each groove 2 presents a T-shaped undulating structure; the thermoelectric material 3 layer covers the surface of the insulating substrate 1, and the transverse section presents a T-shaped undulating periodic structure matched with the groove 2; the phonon scattering layer 4 covers the surface of the thermoelectric material 3 layer, and the cross section presents a rectangular undulating periodic structure; the thermoelectric material 3 layers and the insulating layers are alternately covered by a T-shaped undulating periodic structure; the width and depth of the nano groove 2 are 14 nm-140 nm; the thickness of the single-layer thermoelectric material 3 layer is 14 nm-140 nm; the thickness of the single-layer phonon scattering layer 4 is 2 nm-50 nm.
The number of the thermoelectric material 3 layers is 2-5000; the number of the phonon scattering layers 4 is 2-5000; the insulating substrate 1 is silicon dioxide, aluminum oxide, aluminum nitride, magnesium oxide, mica, polyamide, polybutylene terephthalate, polyethylene naphthalate, polycarbonate, polyamide 6, polyaramid MXD6, polyphenylene sulfide or copolyamide 6-X, wherein x=a natural number between 6 and 12; the thermoelectric material 3 layer is an elemental thermoelectric material 3 or a compound thermoelectric material 3; the phonon-scattering layer 4 is a nanoparticle layer or a continuous insulating material layer.
The simple substance thermoelectric material 3 is Bi and Si; the compound thermoelectric material 3 is Bi2Te3 alloy, coSb3 alloy, siGe alloy, biSb alloy, pbTe alloy, zn4Sb3 alloy or MgSi alloy; the nanoparticle phonon scattering layer 4 is a nanoparticle layer or a nano insulating particle layer, wherein metal particles in the nanoparticle layer are not contacted with each other.
The thermoelectric material 3 layer is a p-type thermoelectric material 3, and the phonon scattering layer 4 is a p-type thermoelectric material 3 doped layer, so that the p-type quasi-one-dimensional nano-structure thermoelectric material 3 is obtained; the thermoelectric material 3 layer is an n-type thermoelectric material 3, and the phonon scattering layer 4 is a doped n-type thermoelectric material 3 layer, so that the n-type quasi-one-dimensional nano-structure thermoelectric material 3 is obtained.
The invention also provides a preparation method of the quasi-one-dimensional nano-structure thermoelectric material 3, which comprises the following steps:
1) Cleaning the substrate;
2) Preparing a substrate with rectangular sawtooth-shaped nano grooves: preparing the cleaned substrate into a substrate with rectangular grooves by adopting a traditional photoetching technology, nanoimprint or a method of forming a periodic strip-shaped structure by self when the inside of the polymer film is broken; the width and depth of the rectangular serrated nano grooves are 14 nm-140 nm;
3) Depositing a thermoelectric material layer in the rectangular sawtooth-shaped nano groove by using a physical vapor deposition method or a chemical vapor deposition method on the substrate with the rectangular sawtooth-shaped nano groove; the thickness of the thermoelectric material layer is smaller than the depth of the groove;
4) Filling nano powder which is the same as the insulating substrate material in the rectangular serrated nano groove, and sintering and solidifying the nano powder on the inner wall of the rectangular serrated nano groove by adopting an electron beam sintering method to form a whole with the rectangular serrated nano groove;
5) Etching a rectangular groove on the nano powder sintering and curing layer by adopting a traditional photoetching technology, wherein the width of the rectangular groove is smaller than that of the rectangular sawtooth-shaped nano groove, so that the cross section of the rectangular sawtooth-shaped nano groove presents a T-shaped structure;
6) Depositing a thermoelectric material layer on the substrate with the T-shaped structure sawtooth-shaped nano grooves by using a physical vapor deposition method or a chemical vapor deposition method, and sintering the thermoelectric material layer and the thermoelectric material layer in the T-shaped structure sawtooth-shaped nano grooves into a whole by using an electron beam sintering method;
7) Sputtering a phonon scattering layer on the thermoelectric material layer, wherein the thickness of the phonon scattering layer is smaller than the depth of the thermoelectric material layer; the phonon scattering layer is a nanoparticle layer or a continuous insulating material layer; the thickness of the phonon scattering layer is 2 nm-50 nm; the thickness of the phonon scattering layer is smaller than the depth of the groove;
8) Repeating the operation steps 3) to 7) to obtain the quasi-one-dimensional nano-structure thermoelectric material 3.
In the step 1), firstly, ultrasonic cleaning is carried out on the cleaning substrate by using a weak base solution to remove oil stains on the surface of the substrate, then ultrasonic cleaning is carried out on the cleaning substrate by using a weak acid solution, and finally, ultrasonic cleaning is carried out on the cleaning substrate by using alcohol and deionized water sequentially; the substrate is glass, polymer, mica, ceramic or silicon wafer with a layer of silicon oxide covered on the surface after heat treatment
The quasi-one-dimensional nano-structure thermoelectric material 3 is applied to preparing thermoelectric devices.
The thermoelectric device is prepared according to the following operation steps: a shielding method or a photoetching method is applied, and the p-type quasi-one-dimensional nano-structure thermoelectric material 3 and the n-type quasi-one-dimensional nano-structure thermoelectric material 3 are deposited into strips, so that p-type strip materials and n-type strip materials which are arranged in parallel at intervals are obtained; plating a blocking layer and a connecting electrode at the junction of the two ends of the p-type strip material and the n-type strip material to form a thermoelectric pair; the barrier layer is tungsten, molybdenum, nickel, titanium or alloys thereof; the connecting electrode is copper, gold, nickel, aluminum or alloys thereof; and connecting a plurality of thermoelectric pairs in parallel or in series to obtain the thermoelectric device.
The invention applies the most mature physical vapor coating technology in the industry at present, combines the substrate with special nano structure, the sputtering technology and the material combination to prepare the quasi-one-dimensional nanowire thermoelectric material, and prepares the material into thermoelectric devices, and the prepared devices have the characteristics of rapid preparation process, low cost, controllable structure and good thermal stability.
Although the invention has been described hereinabove with reference to embodiments, various modifications thereof may be made and equivalents may be substituted for elements thereof without departing from the scope of the invention. In particular, the features of the disclosed embodiments may be combined with each other in any manner as long as there is no structural conflict, and the exhaustive description of these combinations is not given in this specification merely for the sake of omitting the descriptions and saving resources. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (7)
1. The quasi-one-dimensional nano-structure thermoelectric material is characterized by comprising an insulating substrate, at least two thermoelectric material layers and at least two phonon scattering layers; the surface of the insulating substrate is fully distributed with parallel nano grooves which are periodically arranged, and the cross section of each groove presents a T-shaped undulating structure; the thermoelectric material layer covers the surface of the insulating substrate, and the transverse section of the thermoelectric material layer presents a T-shaped undulating periodic structure matched with the groove; the phonon scattering layer covers the surface of the thermoelectric material layer, and the cross section presents a rectangular undulating periodic structure; the thermoelectric material layer and the phonon scattering layer are alternately covered by a T-shaped undulating periodic structure; the width and depth of the nano groove are 14 nm-140 nm; the thickness of the single-layer thermoelectric material layer is 14 nm-140 nm; the thickness of the single-layer phonon scattering layer is 2 nm-50 nm;
the preparation method of the quasi-one-dimensional nano-structure thermoelectric material comprises the following steps:
1) Cleaning the substrate;
2) Preparing a substrate with rectangular sawtooth-shaped nano grooves: preparing the cleaned substrate into a substrate with rectangular grooves by adopting a photoetching technology, nanoimprint or a method of forming a periodic strip structure by self when the inside of the polymer film is broken; the width and depth of the rectangular serrated nano grooves are 14 nm-140 nm;
3) Depositing a thermoelectric material layer in the rectangular sawtooth-shaped nano groove by using a physical vapor deposition method or a chemical vapor deposition method on the substrate with the rectangular sawtooth-shaped nano groove; the thickness of the thermoelectric material layer is smaller than the depth of the groove;
4) Filling nano powder which is the same as the insulating substrate material in the rectangular serrated nano groove, and sintering and solidifying the nano powder on the inner wall of the rectangular serrated nano groove by adopting an electron beam sintering method to form a whole with the rectangular serrated nano groove;
5) Etching a rectangular groove on the nano powder sintering solidification layer by adopting a photoetching technology, wherein the width of the rectangular groove is smaller than that of the rectangular sawtooth-shaped nano groove, so that the cross section of the rectangular sawtooth-shaped nano groove presents a T-shaped structure;
6) Depositing a thermoelectric material layer on the substrate with the T-shaped structure sawtooth-shaped nano grooves by using a physical vapor deposition method or a chemical vapor deposition method, and sintering the thermoelectric material layer and the thermoelectric material layer in the T-shaped structure sawtooth-shaped nano grooves into a whole by using an electron beam sintering method;
7) Sputtering a phonon scattering layer on the thermoelectric material layer, wherein the thickness of the phonon scattering layer is smaller than that of the thermoelectric material layer; the phonon scattering layer is a nanoparticle layer or a continuous insulating material layer; the thickness of the phonon scattering layer is 2 nm-50 nm; the thickness of the phonon scattering layer is smaller than the depth of the groove;
8) Repeating the operation steps 3) to 7) to obtain the quasi-one-dimensional nano-structure thermoelectric material.
2. The quasi-one-dimensional nano-structured thermoelectric material according to claim 1, wherein the thermoelectric material layer has a number of layers of 2-5000; the number of the phonon scattering layers is 2-5000; the insulating substrate is silicon dioxide, aluminum oxide, aluminum nitride, magnesium oxide, mica, polyamide, polybutylene terephthalate, polyethylene naphthalate, polycarbonate and polyphenylene sulfide; the thermoelectric material layer is an elemental thermoelectric material or a compound thermoelectric material; the phonon scattering layer is a nanoparticle layer or a continuous insulating material layer.
3. The quasi-one-dimensional nano-structured thermoelectric material according to claim 2, wherein the elemental thermoelectric material is Bi, si; the compound thermoelectric material is Bi2Te3 series alloy, coSb3 series alloy, siGe series alloy, biSb series alloy, pbTe series alloy, zn4Sb3 series alloy or MgSi series alloy; the nanoparticle layer is a nanoparticle layer or a nanoparticle insulating layer.
4. The quasi-one-dimensional nano-structured thermoelectric material according to claim 2, wherein the thermoelectric material layer is a p-type thermoelectric material, and the phonon scattering layer is a doped p-type thermoelectric material layer, so as to obtain the p-type quasi-one-dimensional nano-structured thermoelectric material; or the thermoelectric material layer is an n-type thermoelectric material, and the phonon scattering layer is a doped n-type thermoelectric material layer, so that the n-type quasi-one-dimensional nano-structure thermoelectric material is obtained.
5. A quasi-one-dimensional nanostructured thermoelectric material according to claim 1, wherein: in the step 1), firstly, ultrasonic cleaning is carried out on the cleaning substrate by using a weak base solution to remove oil stains on the surface of the substrate, then ultrasonic cleaning is carried out on the cleaning substrate by using a weak acid solution, and finally, ultrasonic cleaning is carried out on the cleaning substrate by using alcohol and deionized water sequentially; the substrate is glass, polymer, mica, ceramic or a silicon wafer with a layer of silicon oxide covered on the surface after heat treatment.
6. The application of a quasi-one-dimensional nano-structured thermoelectric material according to claim 1 in the preparation of thermoelectric devices.
7. The thermoelectric device prepared from a quasi-one-dimensional nano-structured thermoelectric material according to claim 6, wherein: the thermoelectric device is prepared according to the following operation steps: depositing p-type quasi-one-dimensional nano-structure thermoelectric materials and n-type quasi-one-dimensional nano-structure thermoelectric materials into strips by using a shielding method or a photoetching method to obtain p-type strip materials and n-type strip materials which are arranged in parallel at intervals; plating a blocking layer and a connecting electrode at the junction of the two ends of the p-type strip material and the n-type strip material to form a thermoelectric pair; the barrier layer is tungsten, molybdenum, nickel, titanium or alloys thereof; the connecting electrode is copper, gold, nickel, aluminum or alloys thereof; and connecting a plurality of thermoelectric pairs in parallel or in series to obtain the thermoelectric device.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1237669A (en) * | 1998-05-14 | 1999-12-08 | 稻叶博 | Composite building material and its manufacturing method |
| US6589863B1 (en) * | 1998-12-25 | 2003-07-08 | Nec Electronics Corp. | Semiconductor device and manufacturing method thereof |
| WO2010018976A2 (en) * | 2008-08-11 | 2010-02-18 | Samsung Electronics Co., Ltd. | Anisotropically elongated thermoelectric material, process for preparing the same, and device comprising the material |
| CN101969095A (en) * | 2010-08-26 | 2011-02-09 | 中山大学 | Quasi one-dimensional nano structural thermoelectric material, device and preparation method thereof |
| JP2013211290A (en) * | 2012-03-30 | 2013-10-10 | Olympus Corp | Jointing device and jointing method |
| CN105633263A (en) * | 2014-11-30 | 2016-06-01 | 中国科学院金属研究所 | Carbon nanofiber/diamond composite thin-film material and application thereof as thermal battery energy conversion device |
| CN205376560U (en) * | 2016-01-19 | 2016-07-06 | 福建晶安光电有限公司 | Sapphire substrate that fixity is good |
| CN205839131U (en) * | 2016-07-04 | 2016-12-28 | 深圳市常润五金有限公司 | One has ultra-fine crystal surface new A BS frosting coating structure |
| CN107946452A (en) * | 2017-11-08 | 2018-04-20 | 南方科技大学 | A kind of high-performance thermo-electric device and its supper-fast preparation method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1397679B1 (en) * | 2009-12-15 | 2013-01-18 | Univ Milano Bicocca | THERMO-ELECTRIC CONVERSION ELEMENT SEEBECK / PELTIER INCLUDING PARALLEL NANOFILES OF CONDUCTOR OR SEMICONDUCTOR MATERIALS ORGANIZED IN FILE AND COLUMNS THROUGH AN INSULATING BODY AND PROCEDURE |
-
2019
- 2019-09-02 CN CN201910821391.6A patent/CN110459669B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1237669A (en) * | 1998-05-14 | 1999-12-08 | 稻叶博 | Composite building material and its manufacturing method |
| US6589863B1 (en) * | 1998-12-25 | 2003-07-08 | Nec Electronics Corp. | Semiconductor device and manufacturing method thereof |
| WO2010018976A2 (en) * | 2008-08-11 | 2010-02-18 | Samsung Electronics Co., Ltd. | Anisotropically elongated thermoelectric material, process for preparing the same, and device comprising the material |
| CN101969095A (en) * | 2010-08-26 | 2011-02-09 | 中山大学 | Quasi one-dimensional nano structural thermoelectric material, device and preparation method thereof |
| JP2013211290A (en) * | 2012-03-30 | 2013-10-10 | Olympus Corp | Jointing device and jointing method |
| CN105633263A (en) * | 2014-11-30 | 2016-06-01 | 中国科学院金属研究所 | Carbon nanofiber/diamond composite thin-film material and application thereof as thermal battery energy conversion device |
| CN205376560U (en) * | 2016-01-19 | 2016-07-06 | 福建晶安光电有限公司 | Sapphire substrate that fixity is good |
| CN205839131U (en) * | 2016-07-04 | 2016-12-28 | 深圳市常润五金有限公司 | One has ultra-fine crystal surface new A BS frosting coating structure |
| CN107946452A (en) * | 2017-11-08 | 2018-04-20 | 南方科技大学 | A kind of high-performance thermo-electric device and its supper-fast preparation method |
Non-Patent Citations (1)
| Title |
|---|
| Measuring methods for thermoelectric properties of one-dimensional nanostructural materials;Yang Liu等;《RSC Advances》;20160418;第6卷;全文 * |
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