CN110459654A - 紫外led外延结构 - Google Patents
紫外led外延结构 Download PDFInfo
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- 230000004888 barrier function Effects 0.000 claims abstract description 23
- 238000005036 potential barrier Methods 0.000 claims abstract description 10
- 230000000737 periodic effect Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 14
- 230000007547 defect Effects 0.000 abstract description 9
- 239000013078 crystal Substances 0.000 abstract description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 15
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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Abstract
本发明提供了一种紫外LED外延结构,包括:在生长衬底表面依次生长的应力控制层、n型电流扩展层、有源区发光层及p型电流扩展层;其中,有源区发光层为由InaGa1‑aN量子阱层和GaN/InbAl1‑bN超晶格势垒层形成的周期性结构,周期为5~8;GaN/InbAl1‑bN超晶格势垒层为InbAl1‑bN层和GaN层形成的周期性结构,周期为4~8,且0.01<a<0.05,0.16<b<0.18,有效解决现有紫外LED外延结构中出现的界面缺失、AlGaN势垒中存在的晶体缺陷等技术问题。
Description
技术领域
本发明涉及LED技术领域,尤其是一种紫外LED外延结构。
背景技术
在365nm-370nm波长范围的GaN基紫外LED结构中,有源发光区一般采用多量子阱结构,其中,阱层使用InGaN材料,势垒层使用AlGaN材料,且AlGaN势垒层必须有较高的Al组分(>12%)以把载流子限制在量子阱中,提高多量子阱结构的内量子效率。但高Al组分的AlGaN势垒和InGaN量子阱之间存在较明显的晶格失配的情况,导致产生界面缺陷和粗糙的外延表面。另外,为了防止InGaN量子阱在高温下被破坏,AlGaN势垒层的生长温度一般不能太高,而低温下生长的高Al组分的AlGaN势垒中存在大量点缺陷,制约着低波段紫外LED的内量子效率。
发明内容
为了克服以上不足,本发明提供了一种紫外LED外延结构,有效解决现有紫外LED外延结构中出现的界面缺陷、AlGaN势垒中存在的晶体缺陷等技术问题。
本发明提供的技术方案为:
一种紫外LED外延结构,包括:在生长衬底表面依次生长的应力控制层、n型电流扩展层、有源区发光层及p型电流扩展层;其中,有源区发光层为由InaGa1-aN量子阱层和GaN/InbAl1-bN超晶格势垒层形成的周期性结构,周期为5~8;GaN/InbAl1-bN超晶格势垒层为InbAl1-bN层和GaN层形成的周期性结构,周期为4~8,且0.01<a<0.05,0.16<b<0.18。
进一步优选地,InaGa1-aN量子阱层的厚度为1~5nm,GaN/InbAl1-bN超晶格势垒层的厚度为10~20nm。
进一步优选地,GaN/InbAl1-bN超晶格势垒层掺杂有浓度在5×1016~5×1018cm-2之间的硅。
在本发明提供的紫外LED外延结构,以短周期的GaN/InbAl1-bN超晶格结构取代原高Al组分的AlGaN势垒层,在获得高Al组分的准AlGaN势垒的同时,有效解决了高Al组分与界面缺陷、晶体缺陷和表面形貌之间的矛盾,实现了高晶体质量紫外LED多量子阱结构,减少了紫外LED中高Al组分势垒层本身的晶体缺陷及高Al组分势垒层和InGaN量子阱之间界面缺陷的同时,提高了紫外LED的发光效率。
附图说明
图1为本发明中紫外LED外延结构示意图;
图2为一实例中GaN/InbAl1-bN超晶格势垒层结构示意图;
图3为有源区发光层的表面AFM图片。
附图标记:
1-生长衬底层,2-应力控制层,3-n型电流扩展层,4-有源区发光层,5-p型电流扩展层,41-InaGa1-aN量子阱层,42-GaN/InbAl1-bN超晶格势垒层。
具体实施方式
为了更清楚地说明本发明实施案例或现有技术中的技术方案,下面将对照附图说明本发明的具体实施方式。显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图,并获得其他的实施方式。
如图1所示为本发明提供的紫外LED(发光波长365-370nm)外延结构示意图,从图中看出,该紫外LED外延结构中包括:在生长衬底(图示中,为硅衬底层1)表面依次生长的应力控制层2、n型电流扩展层3、有源区发光层4及p型电流扩展层5;其中,有源区发光层4为由InaGa1-aN量子阱层41和GaN/InbAl1-bN超晶格势垒层42形成的周期性结构,周期为5~8;GaN/InbAl1-bN超晶格势垒层为InbAl1-bN层和GaN层形成的周期性结构,周期为4~8,且0.01<a<0.05(根据需求的发光波长进行调整),0.16<b<0.18(实现和GaN的晶格匹配)。在该结构中,InaGa1-aN量子阱层41的厚度为1~5nm,GaN/InbAl1-bN超晶格势垒层42的厚度为10~20nm,且GaN/InbAl1-bN超晶格势垒层掺杂有浓度在5×1016~5×1018cm-2之间的硅。在一实例中,如图2所示,GaN/InbAl1-bN超晶格势垒层为由4个周期的InbAl1-bN层和GaN层形成的周期结构。
在一实例中,使用MOCVD生长设备、选用Si(111)衬底为硅衬底层1、非掺杂AlN/AlGaN层为应力控制层2,Si掺杂的AlGaN层作为n型电流扩展层3,InaGa1-aN量子阱层和GaN/InbAl1-bN超晶格势垒层组成的多量子阱结构作为有源区发光层4,Mg掺杂的AlGaN层作为p型电流扩展层5,具体:
首先,将硅衬底层1放置到MOCVD反应室中,升温到1100℃,并通入H2进行高温表面清洁处理。
随后,将反应室温度设定在800~1200℃,往反应室中通入三甲基铝(TMAl)、氨气(NH3),在H2作为载气的条件下生长一层AlN,相同条件下在AlN上通过三甲基铝(TMAl)、三甲基镓(TMGa)、氨气(NH3)生长一层AlGaN,形成应力控制层2。
紧接着,以硅烷(SiH4)作为掺杂剂,掺杂浓度为8×1018cm-3,生长温度在900~1100℃,实现n型电流扩展层3的生长,生长出来的n型电流扩展层3为Al组分7%的n型Al0.07Ga0.93N层,厚度3000nm。
之后,反应室温度为750℃,以氮气(N2)作为载气,通入三甲基铟(TMIn)、三乙基镓(TEGa)、氨气(NH3)生长厚度为3nm的In0.02Ga0.98N量子阱层;接着将反应室温度升高到850℃,通入三甲基铝(TMAl)、三甲基铟(TMIn)、氨气(NH3)生长厚度为1.5nm的In0.17Al0.83N层,之后在相同温度下通入三乙基镓(TEGa)、氨气(NH3)生长1nm的GaN层,In0.17Al0.83N层和GaN层中均通入硅烷(SiH4)进行掺杂,掺杂浓度2×1018cm-3。重复生长6个周期制备得到GaN/In0.17Al0.83N超晶格势垒层,及重复生长5个周期的In0.02Ga0.98N量子阱层和GaN/In0.17Al0.83N超晶格势垒层得到有源区发光层4。该量子阱结构的发光波长365nm,属于近紫外波段。
最后,以H2或者N2作为载气,通入TMAl、TMGa及NH3,且以二茂镁(Cp2Mg)作为掺杂剂在外延生长温度为900℃~1000℃的条件下生长p型电流扩展层5,厚度为80nm。
如图3所示为有源区发光层4的表面AFM图片,其中,图3(a)为本实例中由InaGa1-aN量子阱层和GaN/InbAl1-bN超晶格势垒层形成的有源区发光层的表面AFM图片;图3(b)为现有技术中高组分AlGaN势垒层形成的有源区发光层的表面AFM图片,从图中可以看出,图3(a)相比于图3(b)表面形貌有了很明显的改。
将紫外LED芯片(包括本实例中LED芯片和高Al组分LED芯片)切割成1.125*1.125mm大小,在350mA电流下进行光功率测量,本实例中LED芯片的光功率为422mW,高Al组分LED芯片的光功率为403mW,可见,使用本发明方法制备得到的紫外LED芯片的光功率得到了提升。
应当说明的是,上述实施例均可根据需要自由组合。以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (3)
1.一种紫外LED外延结构,其特征在于,包括:在生长衬底表面依次生长的应力控制层、n型电流扩展层、有源区发光层及p型电流扩展层;其中,有源区发光层为由InaGa1-aN量子阱层和GaN/InbAl1-bN超晶格势垒层形成的周期性结构,周期为5~8;GaN/InbAl1-bN超晶格势垒层为InbAl1-bN层和GaN层形成的周期性结构,周期为4~8,且0.01<a<0.05,0.16<b<0.18。
2.如权利要求1所述的紫外LED外延结构,其特征在于,InaGa1-aN量子阱层的厚度为1~5nm,GaN/InbAl1-bN超晶格势垒层的厚度为10~20nm。
3.如权利要求1或2所述的紫外LED外延结构,其特征在于,GaN/InbAl1-bN超晶格势垒层掺杂有浓度在5×1016~5×1018cm-2之间的硅。
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CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Applicant after: Jingneng optoelectronics Co.,Ltd. Address before: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Applicant before: LATTICE POWER (JIANGXI) Corp. |
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RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191115 |