CN110455572B - Ceramic electronic component metallographic section and preparation method thereof - Google Patents
Ceramic electronic component metallographic section and preparation method thereof Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/003—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring position, not involving coordinate determination
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/26—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring depth
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/02—Devices for withdrawing samples
- G01N1/04—Devices for withdrawing samples in the solid state, e.g. by cutting
- G01N1/06—Devices for withdrawing samples in the solid state, e.g. by cutting providing a thin slice, e.g. microtome
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
- G01N2001/2866—Grinding or homogeneising
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Abstract
The invention discloses a preparation method of a ceramic electronic component microsection, which comprises the following steps: (1) adhering a sample to be detected, a single-layer ceramic dielectric capacitor and two filling blocks on a substrate in parallel, wherein the two filling blocks are respectively adhered to two sides of the single-layer ceramic dielectric capacitor; (2) adhering a mold to a substrate, wherein the mold surrounds a sample to be detected, a single-layer ceramic dielectric capacitor and a filling block, then injecting a colloid into the mold, and obtaining a colloid block after the colloid is solidified; (3) removing the filling blocks from the rubber blocks, so that two sides of the single-layer ceramic dielectric capacitor form a cavity respectively; (4) and grinding and polishing the rubber block. The preparation method of the ceramic electronic component microsection enables an inspector to know the grinding depth of the current section and the specific position of the current section in the ceramic electronic component in the grinding process, and can improve the quality and the efficiency of the microsection inspection and analysis of the ceramic electronic component.
Description
Technical Field
The invention relates to the field of component measurement and analysis, in particular to a ceramic electronic component microsection and a preparation method thereof.
Background
When a ceramic electronic component or a semi-finished product thereof such as a sintered ceramic body is generally subjected to a metallographic section examination analysis, a sample to be examined is arranged in a mold and filled with resin to prepare a resin block, then the sample fixed in the resin block is ground and polished, and finally the resin block is placed under a microscope to observe the sample. Sometimes, an inspector needs to know the specific position of the current section in the sample and the grinding depth of the current section, for example, when the sample is found to have an internal defect, the inspector needs to know the specific position and the approximate size of the defect in the sample so as to analyze the nature and the generation cause of the defect; or, in order to control the polishing progress more accurately so as not to excessively polish and miss the concerned cross-sectional position, particularly, ceramic electronic components having extremely small peripheral dimensions such as 0201 standard, 01005 standard, 008004 standard, etc., it is necessary to control the polishing progress more carefully. However, in the conventional preparation method of the ceramic electronic component microsection, an inspector cannot obtain the information in the grinding process, so that the quality of inspection and analysis is poor and the efficiency is low.
Disclosure of Invention
Based on the above, the invention aims to overcome the defects of the prior art and provide a preparation method of a ceramic electronic component microsection. The ceramic electronic component microsection prepared by the method enables an inspector to know the grinding depth of the current section and the specific position of the current section in the ceramic electronic component in the grinding process, and the quality and the efficiency of the microsection inspection and analysis of the ceramic electronic component can be improved.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows: a preparation method of a ceramic electronic component microsection comprises the following steps:
(1) adhering a sample to be detected, a single-layer ceramic dielectric capacitor and two filling blocks on a substrate in parallel, wherein the two filling blocks are respectively adhered to two sides of the single-layer ceramic dielectric capacitor;
(2) adhering a mold to a substrate, wherein the mold surrounds a sample to be detected, a single-layer ceramic dielectric capacitor and a filling block, then injecting a colloid into the mold, and obtaining a colloid block after the colloid is solidified;
(3) removing the filling blocks from the rubber blocks, so that two sides of the single-layer ceramic dielectric capacitor form a cavity respectively;
(4) and grinding and polishing the rubber block to finish the preparation of the ceramic electronic component metallographic section.
Preferably, in the step (1), when the single-layer ceramic capacitor is adhered to the substrate, two electrode layers of the single-layer ceramic capacitor are perpendicular to the grinding surface, so that the capacitance of the single-layer ceramic capacitor changes linearly with the grinding depth during grinding, and an inspector can conveniently and accurately calculate the grinding depth according to the capacitance of the single-layer ceramic capacitor.
Preferably, in the step (1), the single-layer ceramic dielectric capacitor is rectangular, and the filling block is rectangular. The selection can be realized by adhering the electrode layer on the substrate firmly and making one edge of the electrode layer flush with the grinding surface, and a linear relation between the edge length of the electrode layer vertical to the grinding surface and the capacitance of the single-layer ceramic dielectric capacitor is established.
Preferably, in the step (1), the length of the edge of the single-layer ceramic dielectric capacitor perpendicular to the grinding surface is greater than the required maximum grinding depth by more than 0.4 mm; the length of the side of the single-layer ceramic dielectric capacitor, which is flush with the grinding surface, is 2-3 mm; the thickness of the single-layer ceramic dielectric capacitor is 1-2 mm.
More preferably, in the step (1), the length of the edge of the single-layer ceramic dielectric capacitor perpendicular to the grinding surface is 0.4-1 mm greater than the required maximum grinding depth. The selection can increase the contact area between the colloid and the single-layer ceramic dielectric capacitor, prevent the single-layer ceramic dielectric capacitor from being separated from the colloid block in the grinding process, provide capacitance information in the whole process, prevent the initial capacitance of the single-layer ceramic dielectric capacitor before grinding from being too large, improve the significance degree of the capacitance change rate in grinding, and enable an inspector to know the grinding depth more accurately.
Preferably, in the step (1), the length of four sides of one surface of the filling block, which is adhered to the substrate, is 1-2 mm; the height of the filling block is more than 0.2mm larger than the required maximum grinding depth, and the height of the filling block is more than 0.2mm smaller than the length of the edge of the single-layer ceramic dielectric capacitor, which is vertical to the grinding surface.
When the height of the filling block is greater than the required maximum grinding depth by more than 0.2mm and is less than the length of the edge of the single-layer ceramic dielectric capacitor perpendicular to the grinding surface by more than 0.2mm, the cavity in the grinding process can be guaranteed to have enough depth so as to be convenient for the test fixture to clamp the single-layer ceramic dielectric capacitor, the contact area between the colloid and the single-layer ceramic dielectric capacitor is increased, and the single-layer ceramic dielectric capacitor is prevented from being separated from the colloid block in the grinding process. The length of four sides of one side of the filling block stuck on the substrate is 1-2 mm, so that the cavity is large, and the end part of the clamp can stretch into the cavity conveniently. The length of the edge which is close to the substrate and the electrode layer in the filling block is smaller than the length of the edge which is flush with the grinding surface of the single-layer ceramic dielectric capacitor by more than 0.4mm, so that the contact area of the colloid and the single-layer ceramic dielectric capacitor can be increased, and the single-layer ceramic dielectric capacitor is prevented from being separated from the colloid block in the grinding process.
Preferably, in the step (1), an auxiliary block is further arranged around the filling block; the auxiliary block and the single-layer ceramic dielectric capacitor are enclosed to form a cavity, and the auxiliary filling block is formed.
Preferably, before the step (4), the following steps are further included: and coating conductive silver paste or conductive silver adhesive on the electrode layer of the single-layer ceramic dielectric capacitor exposed in the cavity, and drying the conductive silver paste or the conductive silver adhesive at the temperature of 80-120 ℃.
When the single-layer ceramic dielectric capacitor and the filling block are not tightly attached, the colloid can penetrate into gaps between the single-layer ceramic dielectric capacitor and the filling block and form colloid block fragments after curing, so that the contact between the test fixture and the electrode of the single-layer ceramic dielectric capacitor is blocked, and the capacitance is difficult to measure. When the situation happens, the conductive silver paste or the conductive silver paste coated on the electrode layer exposed in the cavity has better conductivity after being dried, can be used as an intermediary for electrically connecting the electrode layer with a test fixture, plays a role in auxiliary electrical connection, and has negligible influence on the capacitance of the single-layer ceramic dielectric capacitor.
Preferably, the filling block is at least one of wax, cocoa butter replacer and sugar; the method for removing the filling block from the rubber block comprises the following steps: and (3) soaking the rubber block in hot water at the temperature of 80-100 ℃ until the filling block is removed.
Meanwhile, the invention also provides a ceramic electronic component microsection prepared by the preparation method.
Compared with the prior art, the invention has the beneficial effects that:
the preparation method of the ceramic electronic component microsection of the invention is characterized in that a sample to be detected and a single-layer ceramic dielectric capacitor are simultaneously embedded into a rubber block, a cavity is respectively formed at two sides of the single-layer ceramic dielectric capacitor, then the sample to be detected and the single-layer ceramic dielectric capacitor are simultaneously ground, the capacitance of the single-layer ceramic dielectric capacitor can be conveniently tested through the cavity in the grinding process, the grinding depth is calculated through the change of the capacitance, so that a tester provides a solution for the grinding depth of the current section and the specific position of the current section in the ceramic electronic component, and the quality and the efficiency of the inspection and analysis are improved.
Drawings
FIG. 1 is a flow chart of a method for preparing a microsection of a ceramic electronic component according to the present invention;
FIG. 2 is a schematic top view of a sample to be tested, a single-layer ceramic dielectric capacitor and a filling block which are attached to a substrate in parallel in example 1;
FIG. 3 is a schematic top view showing a sample to be tested, a single-layer ceramic dielectric capacitor and an auxiliary block attached to a substrate in parallel in example 2;
FIG. 4 is another schematic top view showing a sample to be tested, a single-layer ceramic dielectric capacitor and an auxiliary block attached to a substrate in parallel in example 2;
21, an electrode layer; 1. a sample to be detected; 2. a single layer ceramic dielectric capacitor; 3. filling blocks; 4. a substrate; 5. and an auxiliary block.
Detailed Description
To better illustrate the objects, aspects and advantages of the present invention, the present invention will be further described with reference to the accompanying drawings and specific embodiments.
Example 1
The invention discloses an embodiment of a ceramic electronic component microsection, which is shown in the attached figure 1, and the preparation method comprises the following steps:
Referring to fig. 2, a sample 1 to be tested, a single-layer ceramic dielectric capacitor 2 and a filling block 3 can be attached to a substrate 4 in parallel by using a double-sided adhesive tape. The pasted plane is the grinding surface of the subsequent grinding treatment.
The sample to be detected is a ceramic electronic component.
The single-layer ceramic capacitor 2 is a conventional structure, and two electrode layers 21 completely cover two opposite surfaces of a ceramic via 22, respectively, thereby generating capacitance. The single-layer ceramic dielectric capacitor is rectangular, so that the single-layer ceramic dielectric capacitor can be firmly adhered to the substrate. When the single-layer ceramic capacitor is adhered on the substrate 4, the two electrode layers 21 of the single-layer ceramic capacitor are perpendicular to the grinding surface. One edge of the electrode layer is then flush with the abrasive surface. The electrode layer is rectangular, so that a linear relation between the side length of the electrode layer perpendicular to the grinding surface and the capacitance of the single-layer ceramic dielectric capacitor can be established.
The length of the side of the single-layer ceramic dielectric capacitor, which is vertical to the grinding surface, is more than 0.4mm greater than the required maximum grinding depth, and preferably, is 0.4-1 mm greater than the required maximum grinding depth. The length of the side of the single-layer ceramic dielectric capacitor parallel to the grinding surface can be 2-3 mm, the thickness of the single-layer ceramic dielectric capacitor can be 1-2 mm, so that the single-layer ceramic dielectric capacitor can be stably pasted on the substrate, and the single-layer ceramic dielectric capacitor is easy to prepare.
The filling block is preferably a rectangular parallelepiped or a substantially rectangular parallelepiped. The two filling blocks are attached to two sides of the single-layer ceramic dielectric capacitor and are respectively attached to an electrode layer. The length of four sides of one surface of the filling block adhered on the substrate can be 1-2 mm, and preferably, the length of the side close to the substrate and the electrode layer is smaller than the length of the side of the single-layer ceramic dielectric capacitor flush with the grinding surface by more than 0.4 mm. The height of the filling block is larger than the required maximum grinding depth by more than 0.2mm when the filling block is pasted on the substrate, and is preferably smaller than the length of the side of the single-layer ceramic dielectric capacitor vertical to the grinding surface by more than 0.2 mm. The filling block can be rectangular block-shaped wax, cacao butter substitute, sugar, etc.
And 2, sticking the mold on the substrate, wherein the mold surrounds the sample to be detected, the single-layer ceramic dielectric capacitor and the filling block, then injecting the colloid into the mold, and obtaining the colloid block after the colloid is solidified.
The shape of the mold is not particularly limited. The injected colloid wraps the sample to be detected, the single-layer ceramic dielectric capacitor and the filling block, the sample to be detected and the single-layer ceramic dielectric capacitor are firmly embedded in the colloid block after curing, and only one side surface is exposed, namely the grinding surface.
The colloid can be selected from crystal colloid, acrylic resin, etc.
And 3, removing the filling blocks from the rubber blocks, so that two sides of the single-layer ceramic dielectric capacitor form a cavity respectively.
The rubber block can be soaked in hot water, the water temperature is preferably 80-100 ℃, and more preferably, boiling water is adopted. The filling mass dissolves and detaches from the gum mass under the action of hot water. The soaking time is not particularly limited, and it is preferable that the filling block is substantially removed cleanly, and the gum block may be stirred while soaking to accelerate dissolution of the filling block. After the filling blocks are removed, a cuboid cavity is formed on each of two sides of the single-layer ceramic dielectric capacitor.
And 4, grinding and polishing the rubber block to finish the preparation of the ceramic electronic component metallographic section.
The rubber block can be ground by an automatic grinding machine, so that the ground rubber block has uniform thickness. During grinding, the sample to be detected and the single-layer ceramic dielectric capacitor are worn away simultaneously. The optical microscope can be used for inspecting the ceramic electronic element at any time in the grinding process, and the capacitance of the single-layer ceramic dielectric capacitor can be tested, because the side length of the electrode layer perpendicular to the grinding surface and the capacitance of the single-layer ceramic dielectric capacitor have a direct proportion relation, the ground depth of the single-layer ceramic dielectric capacitor, namely the current grinding depth, can be calculated according to the capacitance change rate of the single-layer ceramic dielectric capacitor, and the grinding progress can be adjusted in time. And when the internal defect or other concerned parts of the sample to be detected are found by grinding, the specific position of the current section in the sample to be detected can be known, and the quality and the efficiency of detection and analysis are improved.
When the LCR meter is used for testing the capacitance of the single-layer ceramic dielectric capacitor, a nickel-type clamp, a test probe and other test clamps can be used for clamping the single-layer ceramic dielectric capacitor. Because the cavities are formed on the two sides of the single-layer ceramic dielectric capacitor, the end parts of the clamps can extend into the cavities, so that the single-layer ceramic dielectric capacitor can be stably clamped, the clamps can be well contacted with the electrode layers, and the capacitance can be easily measured.
When the length on the limit of individual layer ceramic dielectric capacitor perpendicular to base plate is 0.4 ~ 1mm bigger than the required biggest grinding degree of depth, can increase the area of contact of colloid and individual layer ceramic dielectric capacitor, prevent that individual layer ceramic dielectric capacitor from deviating from the gluey piece among the grinding process, whole journey provides capacitance information to prevent that individual layer ceramic dielectric capacitor is too big at the initial capacitance before the grinding, improve the apparent degree of capacitance change rate when grinding, let the inspector know the grinding degree more accurately.
The height ratio required biggest grinding degree of depth of filling block is more than 0.2mm to more than the length on the limit of the perpendicular to grinding surface of individual layer ceramic dielectric capacitor 0.2mm less, can guarantee that grinding process cavity has sufficient degree of depth so that test fixture centre gripping individual layer ceramic dielectric capacitor, and increase the area of contact of colloid and individual layer ceramic dielectric capacitor, prevent that the individual layer ceramic dielectric capacitor from deviating from gluing the piece among the grinding process.
The length of four sides of one side of the filling block stuck on the substrate is 1-2 mm, so that the cavity is large, and the end part of the clamp can stretch into the cavity conveniently. The length of the edge which is close to the substrate and the electrode layer in the filling block is smaller than the length of the edge which is flush with the grinding surface of the single-layer ceramic dielectric capacitor by more than 0.4mm, so that the contact area of the colloid and the single-layer ceramic dielectric capacitor can be increased, and the single-layer ceramic dielectric capacitor is prevented from being separated from the colloid block in the grinding process.
Preferably, a step of coating conductive silver paste or conductive silver paste on the electrode layer of the single-layer ceramic dielectric capacitor exposed in the cavity and drying the conductive silver paste at the temperature of 80-120 ℃ is added before the step 4. When the single-layer ceramic dielectric capacitor and the filling block are not tightly attached, the colloid can penetrate into gaps between the single-layer ceramic dielectric capacitor and the filling block and form colloid block fragments after curing, so that the contact between the test fixture and the electrode of the single-layer ceramic dielectric capacitor is blocked, and the capacitance is difficult to measure. When the situation happens, the conductive silver paste or the conductive silver paste coated on the electrode layer exposed in the cavity has better conductivity after being dried, can be used as an intermediary for electrically connecting the electrode layer with a test fixture, plays a role in auxiliary electrical connection, and has negligible influence on the capacitance of the single-layer ceramic dielectric capacitor.
In other embodiments, the electrode layer may only partially cover the ceramic via layer, as long as one edge of the electrode layer is flush with the grinding surface.
Example 2
The invention discloses an embodiment of a ceramic electronic component microsection, which is prepared by the following steps:
Two sides of the single-layer ceramic dielectric capacitor 2 can be respectively enclosed with an approximately U-shaped block-shaped auxiliary block 5 to form a cavity, as shown in fig. 3; or respectively form a cavity with the three rectangular auxiliary blocks 5, as shown in fig. 4; or respectively form a cavity together with a specific number of auxiliary blocks with other shapes. The cavity is preferably a cuboid. The material of the auxiliary block can be ceramic, glass, metal, plastic and the like. The sample to be examined can be used as an auxiliary block.
And 2, putting broken wax into the cavity, heating the broken wax to melt the wax and fill the cavity, and obtaining a wax block after the wax liquid is solidified.
The wax can be melted by heating the broken wax with hot air with a small air speed by a hot air gun and preventing the wax block from blowing away, and the substrate can also be placed on a heating table or placed in a heating box to be heated so as to melt the wax. The auxiliary block and the single-layer ceramic dielectric capacitor enclose a cavity to play a role in assisting the wax block in forming.
And 3, sticking the mold on the substrate, wherein the mold surrounds the sample to be detected, the single-layer ceramic dielectric capacitor, the auxiliary block and the wax block, then injecting the colloid into the mold, and obtaining the colloid block after the colloid is solidified.
And 4, removing the wax block from the rubber block, so that cavities are formed on two sides of the single-layer ceramic dielectric capacitor.
The method of removing the wax lumps was the same as in example 1.
The melted wax has fluidity and can fill the cavities and gaps between the auxiliary blocks and the single-layer ceramic dielectric capacitor, so that the wax blocks obtained after the wax liquid is solidified are tightly attached to the single-layer ceramic dielectric capacitor, and the colloid cannot penetrate between the wax blocks and the single-layer ceramic dielectric capacitor, so that no colloid block chips exist in the cavities in the step 4, the test fixture is in good contact with the electrode of the single-layer ceramic dielectric capacitor more easily, and the capacitance is measured easily.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the protection scope of the present invention, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (9)
1. The preparation method of the ceramic electronic component microsection is characterized by comprising the following steps of:
(1) the method comprises the following steps that a sample to be detected, a single-layer ceramic dielectric capacitor and two filling blocks are pasted on a substrate in parallel, the two filling blocks are respectively pasted on two sides of the single-layer ceramic dielectric capacitor, when the single-layer ceramic dielectric capacitor is pasted on the substrate, two electrode layers of the single-layer ceramic dielectric capacitor are perpendicular to a grinding surface, and the single-layer ceramic dielectric capacitor is rectangular;
(2) adhering a mold to a substrate, wherein the mold surrounds a sample to be detected, a single-layer ceramic dielectric capacitor and a filling block, then injecting a colloid into the mold, and obtaining a colloid block after the colloid is solidified;
(3) removing the filling blocks from the rubber blocks, so that two sides of the single-layer ceramic dielectric capacitor form a cavity respectively;
(4) and grinding and polishing the rubber block to finish the preparation of the ceramic electronic component metallographic section.
2. The method for preparing a microsection of a ceramic electronic component according to claim 1, wherein in step (1), the filling block is rectangular.
3. The method for preparing a microsection of a ceramic electronic component according to claim 1, wherein in the step (1), the length of the edge of the single-layer ceramic dielectric capacitor, which is perpendicular to the grinding surface, is more than 0.4mm greater than the required maximum grinding depth; the length of the side of the single-layer ceramic dielectric capacitor, which is flush with the grinding surface, is 2-3 mm; the thickness of the single-layer ceramic dielectric capacitor is 1-2 mm.
4. The method for preparing the microsection of the ceramic electronic component according to the claim 3, wherein in the step (1), the length of the edge of the single-layer ceramic dielectric capacitor, which is perpendicular to the grinding surface, is 0.4-1 mm greater than the required maximum grinding depth.
5. The method for preparing the microsection of the ceramic electronic component according to claim 1, wherein in the step (1), the length of four sides of one surface of the filling block, which is adhered to the substrate, is 1-2 mm; the height of the filling block is more than 0.2mm larger than the required maximum grinding depth, and the height of the filling block is more than 0.2mm smaller than the length of the edge of the single-layer ceramic dielectric capacitor, which is vertical to the grinding surface.
6. The method for preparing a microsection of a ceramic electronic component according to claim 1, wherein in the step (1), an auxiliary block is further arranged around the filling block; the auxiliary block and the single-layer ceramic dielectric capacitor are enclosed to form a cavity, and the auxiliary filling block is formed.
7. The method for preparing a microsection of a ceramic electronic component according to claim 1, further comprising the following steps before the step (4): and coating conductive silver paste or conductive silver adhesive on the electrode layer of the single-layer ceramic dielectric capacitor exposed in the cavity, and drying the conductive silver paste or the conductive silver adhesive at the temperature of 80-120 ℃.
8. The method for preparing a microsection of a ceramic electronic component according to claim 1, wherein the filler block is at least one of wax, cocoa butter substitutes, and sugar; the method for removing the filling block from the rubber block comprises the following steps: and (3) soaking the rubber block in hot water at the temperature of 80-100 ℃ until the filling block is removed.
9. A ceramic electronic component microsection prepared by the preparation method of any one of claims 1 to 8.
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| CN109870336A (en) * | 2019-01-31 | 2019-06-11 | 长江存储科技有限责任公司 | Semiconductor test system and its test method |
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