CN110453283A - A kind of mold and method of the EFG technique growth sealing sapphire pipe of sealing cover type seeding - Google Patents
A kind of mold and method of the EFG technique growth sealing sapphire pipe of sealing cover type seeding Download PDFInfo
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- CN110453283A CN110453283A CN201910859058.4A CN201910859058A CN110453283A CN 110453283 A CN110453283 A CN 110453283A CN 201910859058 A CN201910859058 A CN 201910859058A CN 110453283 A CN110453283 A CN 110453283A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to molds and method that a kind of EFG technique of sealing cover type seeding grows sealing sapphire pipe, including smelting furnace, seed crystal (1), crucible (5), and raw material (6) and mold in crucible (5), the mold is the long brilliant mold of combined type molybdenum matter, including outer cylinder (3) and inner core (4), it is annular feed seam between outer cylinder (3) and inner core (4), wherein inner core (4) top is equipped with groove (41).Method includes: that thermal field is installed, fed intake, vacuumizing, fills protection gas, temperature increasing for melting materials, rising crucible feed, seeding, pulling growth, drop crucible stopping feed and lift the processes such as crystal break away from moulds, cooling annealing.Compared with prior art, the present invention can effectively control the uniformity of entire transistor or more and wall thickness, the control of crucible wicking height can be calculated by raw material weight volume and mold height position etc. needed for long brilliant length, and growth course is visible controllable, and crystal quality is high.
Description
Technical field
The invention belongs to crystalline material preparation technical field, be related to a kind of EFG technique growth sealing sapphire pipe mold and
Growth technique technology.
Background technique
Sapphire (Sapphire) is a kind of aluminium oxide (α-Al2O3) monocrystalline, also known as corundum, be it is a kind of have collect excellent
The unique combination body of optics, physical and chemical properties.As most hard oxide crystal, synthetic sapphire is due to its optics and object
Reason characteristic and be employed for the field of various requirement harshness, its high intensity, excellent hot attribute and transmission can be kept at high temperature
Rate has good thermal characteristics, fabulous electrical characteristic and dielectric property, and anti-chemical corrosion.With science and technology it is swift and violent
Development, synthetic sapphire crystal have become modern industry, especially microelectronics and the particularly important basic material of photoelectronic industry,
It is widely used in the window material of infrared military installation, satellite spatial technology, high intensity laser beam, in space flight, military project, lining
Using very extensive, market is broken out rapidly in the fields such as bottom, medical instrument, precision machinery, luxury goods.
Synthetic sapphire growing method mainly uses KY method (Kyropoulos method, kyropoulos), HEM method
(Heat Exchanger Method, heat-exchanging method), EFG method (Edge-defined Film-fed Growth, EFG technique),
CZ method (Czochralski method, czochralski method) etc., technology has many decades history more mature.Wherein EFG technique is from molten
One of the method that body manually produces monocrystal material, i.e. " Edge-Defined Film fed growth " technology, abbreviation EFG method are mainly used for
The crystal of specific shape is grown, actually a kind of its deformation for being czochralski method.The working principle of EFG technique is that raw material is put into earthenware
Heating and melting in crucible, melt rise to die tip along a mold under capillary action, connect seed crystal on die top liquid level and mention
Melt is drawn, makes constantly to carry out rearranging for atom or molecule on the interface of seed crystal and melt, gradually solidifies and give birth to cooling
Grow monocrystal identical with die edge shape.
EFG technique has the advantages such as growth time is short, power consumption is low, orientable/shape growing, crystal pro cessing are simple, will be by
Gradually become the mainstream growth pattern of shaped sapphire crystal.
For sapphire special-shaped product, especially sealing pipe, conventional method is that growing large-size crystal ingot is added by shape
Work and internal digging technology production, or realized by pipe and capping using laser welding technology, due to sapphire high hard
The degree wearability machining cost high period is long, and laser processing is at high cost, and processing yield is low, and lacks targetedly abnormity processing
Equipment, greatly limits sapphire application and popularization.
Summary of the invention
It is an object of the present invention to overcome the above-mentioned drawbacks of the prior art and provide a kind of easy to operate, effective
Controllably, seed crystal inoculation and entire growth course are as it can be seen that the sealing cover type seeding of the production of high-quality sapphire pipe can be realized effectively
EFG technique growth sealing sapphire pipe mold and method.
The purpose of the present invention can be achieved through the following technical solutions: a kind of EFG technique growth sealing of sealing cover type seeding
The mold of sapphire pipe, including smelting furnace, seed crystal, crucible, and raw material and mold in crucible, which is characterized in that described
Mold be the long brilliant mold of combined type molybdenum matter, including outer cylinder and inner core, be annular feed seam between outer cylinder and inner core, wherein inner core
Top is equipped with groove.
The material of the mold is High-Purity Molybdenum, total height 50-55mm, the slit width of annular feed seam between outer cylinder and inner core
0.3-0.5mm is connected and fixed between outer cylinder and inner core by pin.
The outer cylinder top is the slope mouthful at 120 ° of the outer elevation angle, and the slope mouthful bottom is equipped with the outer step of outwardly convex,
For with the pocket matches that are arranged in crucible cover.
The depth of the inner core top groove is 5-10mm, and groove internal diameter is identical as grown transistor internal diameter, outer cylinder top
End is outer diametrically identical as grown transistor outer diameter.
The seed crystal, the kyropoulos crystal for the high-quality that has drawn from, it is desirable that without cracking, without crystal boundary, bubble-free, seed crystal is plate
Shape, draw crystal plane direction be C to.
The method that EFG technique growth sealing cover type seeding is carried out using the device, which is characterized in that this method is capping
The sapphire pipe EFG technique crystal growing technology of formula seeding, specifically includes the following steps:
The installation of S1 thermal field: induction heating mode is used, the thermal field component of smelting furnace is installed；
S2 charging: mold being placed in crucible, crucible is placed in smelting furnace, raw material and mold are placed in crucible, is adjusted
The distance between edge and the distance between mold bottom and raw material charge level in crucible on seed crystal and mold mouth, and on mold
Place the fritter Al of observation temperature in port2O3Material is as with reference to material；
S3: will vacuumize and be filled with protective gas in smelting furnace, persistently increase heating power by 25kW/h rate, until mold
Until mouth observation material fusing, constant 30-45min guarantees that the raw material whole in crucible melts, then increases crucible until observing
Be fed to sew on after melting material occurs in end outside mold and stop, constant 30min, increase distance according to crucible it is initial until, feed intake meter
Melt liquid level height, crucible depth and the mold height COMPREHENSIVE CALCULATING of calculation obtain, and guarantee mold lower end during entire long brilliant
Always it is immersed in melt liquid level or less；Begin to decline seed crystal after observing feed seam feed, rate 5mm/min, until seed crystal away from
From mold mouth 1-3mm, seed crystal 5-10min is then baked；
S4 seeding: seed crystal is stopped with 1mm/min rate decline seed crystal until touching edge on mold mouth after toasting, seed
Crystalline substance covers entire mold mouth surrounding, then starts seeding operation, with reference to the variation of lifting rod weighing-up wave, with 0.1-0.2mm/
Min gradually declines seed crystal, and until the melting raw material that seed crystal contacts feed seam left and right ends, seed crystal seeding dropping distance can join
Examine the depth of mold V-type mouth；
The S5 isodiametric growth stage: lifting seed rod after seeding with 0.1-0.3mm/min, starts isometrical round tube growth, gradually
The rate of pulling is improved to 0.6-0.8mm/min, until growing into enough length dimensions；
S6 drop crucible stops being fed and lifts crystal break away from moulds: after isodiametric growth, decline crucible to initial position,
Crucible melt liquid level declines break away from moulds lower end inlet, stops feed, is lifted along with the entire pipe of the lifting of seed rod
Break away from moulds, until pipe lower end terminates lifting process apart from mold mouth 5-10mm, long crystalline substance terminates；
S7 cooling annealing: enter cooling annealing process after long crystalline substance, temperature-fall period continues 5h, to reduce the growth of pipe
Stress.
Further,
For the heater that induction type heating method uses in step S1 for high purity hard graphite, thermal insulation material is graphite felt；
Raw material selects the flame method Al of high-purity in step S22O3Crystallization material；Seed crystal is on mold mouth along 20-30mm, mould
Has raw material charge level 5-10mm in distance from bottom crucible；
Molten furnace pressure is evacuated in step S3 lower than 8Pa, it is protective atmosphere that the protective gas, which selects high-purity Ar gas,
Inflation rate 1000-1500ml/min, until furnace pressure reaches 90000Pa or so.
Settable more molds in the crucible realize more transistor synchronous growths.
Compared with prior art, the invention has the following advantages:
1. the present invention provides a kind of unique long brilliant die design schemes, and forms standard set crystal growing technology process skill
Art route, technology include: knockdown molybdenum die, and preferably, the EFG technique of seed crystal sealing cover type sealing is long for high-quality seed crystal orientation
Crystal technique；According to the specification requirement of the technical principle of EFG technique growing sapphire and growth product, design growing die feed seam
Wide 0.3-0.5mm, growth pipe wall thickness dimension is fed seam top outer cylinder slope by mold and inner core groove wall thickness dimension synthesis limits
It is fixed；
2. choosing the kyropoulos crystal of high-quality as seed crystal, seed crystal is tabular, and seeding face is the face C；This plate seed
The long brilliant advantage of brilliant sealing cover type: 1) seed crystal directly covers entire mold and is grown, and seed crystal is directly as sealing pipe；2) seed crystal
Sealing cover type, seed size are greater than mold and the pipe caliber size that is grown, are directly entered the isodiametric growth stage after seeding, directly
Across shouldering process, polycrystalline defect of the shouldering in the process because of crystal orientation deflection induction can be effectively avoided.
3. entire growth technique process includes: that thermal field is installed, fed intake, vacuumizing, fills protection gas, temperature increasing for melting materials, rises crucible
Processes, the crucibles such as feed, seeding, pulling growth, drop crucible stop feed and lift crystal break away from moulds, cooling is annealed increase high
Degree control can be obtained by COMPREHENSIVE CALCULATINGs such as inventory, long brilliant length, mold heights, and growth course is visible controllable, crystal quality
It is high.
4. in general, the device and method are easy to operate, effectively controllable, seed crystal inoculation and entire growth course as it can be seen that
It can effectively realize the production of high-quality sapphire pipe.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the mold of the EFG technique growth sealing sapphire pipe of sealing cover type seeding；
Fig. 2 is the cross-sectional view of inventive die.
It is identified in figure are as follows: 1. seed crystals；2. growing crystal；3. outer cylinder；4. inner core；41. groove；5. crucible；6. raw material；7. pin
Nail.
Specific embodiment
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings.
Embodiment 1
The mold of the EFG technique growth sealing sapphire pipe of sealing cover type seeding, including vacuum furnace chamber, the upper lifting with weighing
Support device under grower, crucible lifting function vacuumizes and aerating and exhaust device, mid-frequency induction heating and attemperator etc.,
Induction coil is placed among furnace chamber, and inside is followed successively by insulating layer and heater, and heater is high purity hard graphite, thermal insulation material
For graphite felt, inside furnace is equipped with crucible 5, is equipped with raw material 6 and mold in crucible 5.
The present invention devises certain moduli lamps structure as described in Fig. 1-2, which is the long brilliant mold of combined type molybdenum matter, material
For High-Purity Molybdenum, total height 50-55mm is designed as interior outer double-layer structure, and main body includes outer cylinder 3 and inner core 4, outer cylinder 3 and inner core 4 it
Between for slit width 0.3-0.5mm annular feed seam, be connected and fixed between outer cylinder 3 and inner core 4 by pin, wherein 4 top of inner core
Equipped with groove 41,3 top of outer cylinder is the slope mouthful 31 at 120 ° of the outer elevation angle, and 31 bottoms of the slope mouthful are equipped with outwardly convex
Outer step 32, for the pocket matches that are arranged in crucible cover.The depth of the 4 top groove 41 of inner core is 5-10mm,
41 internal diameter of groove is identical as 2 internal diameter of grown transistor, diametrically identical as grown transistor outer diameter outside 3 top of outer cylinder.3 He of outer cylinder
It can be fixedly connected by pin 7 between inner core 4.
The seed crystal 1, the kyropoulos crystal for the high-quality that has drawn from, it is desirable that without cracking, without crystal boundary, bubble-free, seed crystal is
Plate, draw crystal plane direction be C to.
The method for carrying out EFG technique growth sealing cover type seeding using the device, this method are that the indigo plant of sealing cover type seeding is precious
Madreporic canal EFG technique crystal growing technology, specifically includes the following steps:
The installation of S1 thermal field: induction heating mode is used, the thermal field component of smelting furnace is installed；The hair that induction type heating method uses
Hot body is high purity hard graphite, and thermal insulation material is graphite felt；
S2 charging: mold being placed in crucible 5, crucible 5 is placed in smelting furnace, raw material 6 and mold are placed in crucible 5,
Adjust on seed crystal 1 and mold mouth along the distance between raw material charge level in 20-30mm and mold bottom and crucible away from
From for 5-10mm, and the fritter Al of observation temperature is placed in mold upper port2O3Material is as with reference to material；Raw material 6 selects high-purity
Flame method Al2O3Crystallization material；
S3: it will be evacuated to molten furnace pressure in smelting furnace lower than 8Pa, and be filled with protective gas, protective gas is selected high-purity
Ar gas is protective atmosphere, inflation rate 1000-1500ml/min, until furnace pressure reaches 90000Pa or so, by 25kW/h speed
Rate persistently increases heating power, and until mold mouth observes material fusing, constant 30-45min guarantees that the raw material in crucible 5 is complete
Portion's fusing, then increases crucible 5 and stops until observing and being fed to sew on after melting material occurs in end outside mold, and constant 30min is increased
Distance is according to crucible until initial, melt liquid level height, crucible depth and the mold height COMPREHENSIVE CALCULATING that inventory calculates obtain,
Guarantee that mold lower end is immersed in melt liquid level or less always during entire long brilliant；Seed is begun to decline after observing feed seam feed
Crystalline substance 1, rate 5mm/min, until seed crystal 1 apart from mold mouth 1-3mm, then bakes seed crystal 5-10min；
S4 seeding: seed crystal 1 is stopped with 1mm/min rate decline seed crystal until touching edge on mold mouth after toasting,
Seed crystal covers entire mold mouth surrounding, then starts seeding operation, with reference to the variation of lifting rod weighing-up wave, with 0.1-0.2mm/
Min gradually declines seed crystal, and until the melting raw material that seed crystal 1 contacts feed seam left and right ends, seed crystal seeding dropping distance can
With reference to the depth of mold V-type mouth；
The S5 isodiametric growth stage: lifting seed rod after seeding with 0.1-0.3mm/min, starts isometrical round tube growth, gradually
The rate of pulling is improved to 0.6-0.8mm/min, until growing into enough length dimensions；
S6 drop crucible stops being fed and lifts crystal break away from moulds: after isodiametric growth, decline crucible to initial position,
Crucible melt liquid level declines break away from moulds lower end inlet, stops feed, is lifted along with the entire pipe of the lifting of seed rod
Break away from moulds, until pipe lower end terminates lifting process apart from mold mouth 5-10mm, long crystalline substance terminates；
S7 cooling annealing: enter cooling annealing process after long crystalline substance, temperature-fall period continues 5h, to reduce the growth of pipe
Stress.
It can increase seed size by increasing die unit, realize the synchronous growth of more transistors.
Claims (8)
1. a kind of mold of the EFG technique growth sealing sapphire pipe of sealing cover type seeding, including smelting furnace, seed crystal (1), crucible (5),
And raw material (6) and mold in crucible (5), which is characterized in that the mold is the long brilliant mold of combined type molybdenum matter, packet
Outer cylinder (3) and inner core (4) are included, is annular feed seam between outer cylinder (3) and inner core (4), wherein inner core (4) top is equipped with groove
(41)。
2. a kind of mold of the EFG technique growth sealing sapphire pipe of sealing cover type seeding according to claim 1, feature
It is, the material of the mold is High-Purity Molybdenum, total height 50-55mm, annular feed seam between outer cylinder (3) and inner core (4)
Slit width 0.3-0.5mm is connected and fixed between outer cylinder (3) and inner core (4) by pin.
3. a kind of mold of the EFG technique growth sealing sapphire pipe of sealing cover type seeding according to claim 1, feature
It is, the outer cylinder (3) top is the slope mouthful at 120 ° of the outer elevation angle, and the slope mouthful bottom is equipped with the outer step of outwardly convex,
For with the pocket matches that are arranged in crucible cover.
4. a kind of mold of the EFG technique growth sealing sapphire pipe of sealing cover type seeding according to claim 3, feature
It is, the depth of the inner core (4) top groove (41) is 5-10mm, groove (41) internal diameter and grown transistor internal diameter phase
Together, diametrically identical as grown transistor outer diameter outside outer cylinder (3) top.
5. a kind of mold of the EFG technique growth sealing sapphire pipe of sealing cover type seeding according to claim 1, feature
Be, the seed crystal (1) be plate, draw crystal plane direction be C to.
6. a kind of method for carrying out EFG technique growth sealing cover type seeding using device described in claim 1, which is characterized in that should
Method is the sapphire pipe EFG technique crystal growing technology of sealing cover type seeding, specifically includes the following steps:
The installation of S1 thermal field: induction heating mode is used, the thermal field component of smelting furnace is installed；
S2 charging: mold being placed in crucible (5), crucible (5) is placed in smelting furnace, is placed with raw material (6) and mould in crucible (5)
Tool, the distance between adjustment seed crystal (1) and raw material charge level in the distance between edge on mold mouth and mold bottom and crucible,
And the fritter Al of observation temperature is placed in mold upper port2O3Material is as with reference to material；
S3: will vacuumize and be filled with protective gas in smelting furnace, persistently increase heating power by 25kW/h rate, until mold mouth is seen
Until examining material fusing, constant 30-45min guarantees that the raw material in crucible (5) all melts, and then increases crucible (5) until observation
It is fed to sew on after melting material occurs in end outside to mold and stop, constant 30min begins to decline seed crystal after observing feed seam feed
(1), rate 5mm/min, until seed crystal (1) apart from mold mouth 1-3mm, then bakes seed crystal 5-10min；
S4 seeding: seed crystal (1) is stopped with 1mm/min rate decline seed crystal until touching edge on mold mouth after toasting, seed
Crystalline substance covers entire mold mouth surrounding, then starts seeding operation, gradually declines seed crystal with 0.1-0.2mm/min, until seed crystal (1)
Until the melting raw material of contact feed seam left and right ends；
The S5 isodiametric growth stage: lifting seed rod after seeding with 0.1-0.3mm/min, starts isometrical round tube growth, is gradually increased
The rate of pulling is to 0.6-0.8mm/min, until growing into enough length dimensions；
S6 drop crucible stops being fed and lifts crystal break away from moulds: after isodiametric growth, decline crucible to initial position, crucible
Melt liquid level declines break away from moulds lower end inlet, stops feed, is detached from along with the entire pipe of the lifting of seed rod by lifting
Mold, until pipe lower end terminates lifting process apart from mold mouth 5-10mm, long crystalline substance terminates；
S7 cooling annealing: entering cooling annealing process after long crystalline substance, temperature-fall period continues 5h, answered with reducing the growth of pipe
Power.
7. the method for EFG technique growth sealing sapphire pipe according to claim 6, which is characterized in that
For the heater that induction type heating method uses in step S1 for high purity hard graphite, thermal insulation material is graphite felt；
Raw material (6) selects the flame method Al of high-purity in step S22O3Crystallization material；Seed crystal (1) on mold mouth along 20-30mm,
Mold bottom raw material charge level 5-10mm in crucible；
Molten furnace pressure is evacuated in step S3 lower than 8Pa, it is protective atmosphere, inflation that the protective gas, which selects high-purity Ar gas,
Rate 1000-1500ml/min, until furnace pressure reaches 90000Pa or so.
8. the method for EFG technique growth sealing sapphire pipe according to claim 6, which is characterized in that in the crucible
Settable more molds realize more transistor synchronous growths.
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| CN201910859058.4A CN110453283A (en) | 2019-09-11 | 2019-09-11 | A kind of mold and method of the EFG technique growth sealing sapphire pipe of sealing cover type seeding |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114635183A (en) * | 2022-03-29 | 2022-06-17 | 同济大学 | Directional crystallization device for guided mode method and growth method based on device |
| CN116926669A (en) * | 2022-03-31 | 2023-10-24 | 连城凯克斯科技有限公司 | Sapphire armor plate preparation mold, preparation device and manufacturing process |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3915656A (en) * | 1971-06-01 | 1975-10-28 | Tyco Laboratories Inc | Apparatus for growing crystalline bodies from the melt |
| CN1884635A (en) * | 2006-05-22 | 2006-12-27 | 天津市硅酸盐研究所 | Method for growing high-performance tube type sapphire back cover |
| CN104088011A (en) * | 2014-07-15 | 2014-10-08 | 天津市恒瑜晶体材料制造有限公司 | Preparation method of sapphire micro-capillary and die used in preparation method |
| CN104532341A (en) * | 2014-12-15 | 2015-04-22 | 江苏苏博瑞光电设备科技有限公司 | Crucible structure for growing sapphire test tube and growing method of sapphire test tube |
| CN108411367A (en) * | 2018-03-06 | 2018-08-17 | 同济大学 | Flow atmosphere EFG technique multi-disc sapphire crystallization device and method |
-
2019
- 2019-09-11 CN CN201910859058.4A patent/CN110453283A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3915656A (en) * | 1971-06-01 | 1975-10-28 | Tyco Laboratories Inc | Apparatus for growing crystalline bodies from the melt |
| CN1884635A (en) * | 2006-05-22 | 2006-12-27 | 天津市硅酸盐研究所 | Method for growing high-performance tube type sapphire back cover |
| CN104088011A (en) * | 2014-07-15 | 2014-10-08 | 天津市恒瑜晶体材料制造有限公司 | Preparation method of sapphire micro-capillary and die used in preparation method |
| CN104532341A (en) * | 2014-12-15 | 2015-04-22 | 江苏苏博瑞光电设备科技有限公司 | Crucible structure for growing sapphire test tube and growing method of sapphire test tube |
| CN108411367A (en) * | 2018-03-06 | 2018-08-17 | 同济大学 | Flow atmosphere EFG technique multi-disc sapphire crystallization device and method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114635183A (en) * | 2022-03-29 | 2022-06-17 | 同济大学 | Directional crystallization device for guided mode method and growth method based on device |
| CN114635183B (en) * | 2022-03-29 | 2023-11-24 | 同济大学 | Guide die method oriented crystallization device and growth method based on device |
| CN116926669A (en) * | 2022-03-31 | 2023-10-24 | 连城凯克斯科技有限公司 | Sapphire armor plate preparation mold, preparation device and manufacturing process |
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