CN110444889B - Terahertz electric control resonance switching type super-surface phase shift device - Google Patents
Terahertz electric control resonance switching type super-surface phase shift device Download PDFInfo
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- CN110444889B CN110444889B CN201910568565.2A CN201910568565A CN110444889B CN 110444889 B CN110444889 B CN 110444889B CN 201910568565 A CN201910568565 A CN 201910568565A CN 110444889 B CN110444889 B CN 110444889B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
- H01Q3/34—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means
- H01Q3/36—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means with variable phase-shifters
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Abstract
A terahertz electric control resonance switching type super-surface phase shift device relates to the field of metamaterials and electromagnetic functional devices. The phase shift structure layer comprises phase shift units arranged in an M multiplied by N orthogonal array mode, each phase shift unit comprises a rectangular open resonance ring, an opening of the resonance ring is positioned at the midpoint of the side of the resonance ring, two end points of the resonance ring are respectively connected with a rectangular metal strip at the opening of the resonance ring, a connection point is positioned at the center of the long side of the rectangular metal strip, and the long side of the rectangular metal strip is perpendicular to the side of the resonance ring where the opening is positioned; and an ohmic patch is arranged on the upper surface of the dielectric substrate between the two rectangular metal strips at the opening. The phase shift range of the invention is expanded to 330 degrees, and the integration level of the device and the control precision of the array are further improved.
Description
Technical Field
The invention relates to the field of metamaterials and electromagnetic functional devices.
Technical Field
Terahertz (THz) waves are a new type of electromagnetic spectrum to be developed, and generally refer to electromagnetic waves with frequencies in the range of 0.1 to 10 THz. The frequency range is between millimeter wave and infrared, light, with many unique electromagnetic properties. Therefore, the method has extremely important potential utilization value in the fields of physics, chemistry, electronic information, imaging, life science, material science, astronomy, atmospheric and environmental monitoring, national security and anti-terrorism, communication, radar and the like.
The phased array antenna has the advantages of more flexible wave scanning, stronger anti-interference performance and the like. The phase shifter is used as a key component of the phased array, and the performance of the phase shifter directly determines the performance of the phased array, so that the research on the high-performance phase shifter has extremely important practical significance for the research on the low-loss high-performance terahertz waveband phased array. Conventional phase shifters are typically implemented based on switching arrays of ferrite materials, positive-intrinsic-negative diodes, field effect transistors, etc. Ferrite materials are large in size, high in cost and not easy to integrate, and the problems of large loss, poor linearity and the like of semiconductor switches hinder the application of phase shifters in terahertz wave bands. The artificial microstructure combined with the phase change material is a novel sub-wavelength periodic artificial structure material, has the characteristics of designability and controllability, and can regulate and control the response intensity and the spectrum range of the phase change material to electromagnetic waves by changing the state characteristic of the phase change material.
In recent years, with the development of semiconductor materials and technologies, electronically controlled transistors have shown excellent performance, and become the core of the present microelectronic industry. The microstructure array is an artificial electromagnetic periodic array structure formed by periodically or non-periodically arranging a macroscopic basic unit resonance structure with a specific geometric shape, the response characteristic and the electromagnetic characteristic of the resonance structure to an externally applied electromagnetic field can be controlled by artificially designing the resonance unit, and the artificial microstructure currently comprises a frequency selective surface structure (FSS), an artificial metamaterial (metamaterial) and the like. With the development of recent micro-machining technology, the artificial microstructure plays a great role in promoting the development of passive functional devices, and various related functional devices are developed in microwave millimeter wave bands, terahertz wave bands and optical wave bands.
Aiming at the defects and requirements of the prior art, the unit phase modulation is realized based on the HEMT transistor-super surface microstructure composite array, the electronic gas characteristic and the resonance mode of the composite super surface microstructure array are controlled by an external electric control means to carry out phase control on terahertz waves, and the method is one of the leading researches in the current international direction and is a brand new way for realizing an advanced scanning technology.
Disclosure of Invention
The technical problem to be solved by the invention is to provide an adjustable phase shift array which is simple in structure, easy to process and small in loss.
The technical scheme adopted by the invention for solving the technical problems is that the terahertz electronic control resonance switching type super-surface phase shift device is characterized by comprising a metal bottom plate, a dielectric substrate and a phase shift structure layer which are arranged layer by layer from bottom to top,
the phase shift structure layer comprises phase shift units arranged in an MXN orthogonal array mode, each phase shift unit comprises a rectangular open resonant ring, the opening of each resonant ring is located at the midpoint of the side where the resonant ring is located, two end points of each resonant ring are respectively connected with a rectangular metal strip at the opening of each resonant ring, the connection point is located in the center of the long side of each rectangular metal strip, and the long side of each rectangular metal strip is perpendicular to the side of the resonant ring where the opening is located; an ohmic patch is arranged on the upper surface of the dielectric substrate between the two rectangular metal strips at the opening, a doped heterogeneous line is arranged above the ohmic patch, the doped heterogeneous line is parallel to and equidistant from the two rectangular metal strips, and M, N are integers which are larger than 2;
in the phase shift unit array, two sides of each row of phase shift units are respectively provided with a cathode outgoing line and an anode outgoing line along the row line direction, and each row of phase shift units is positioned between the cathode outgoing line and the anode outgoing line corresponding to the row;
in each row, the doped heterogeneous line of the phase shift unit is connected to the anode lead wire of the row, and the split resonant ring is connected to the cathode lead wire of the row;
each cathode lead-out wire is connected with the same cathode bus, and the cathode bus is provided with an external cathode connecting end; the anode lead wires are independent of each other.
The material of the doped heterogeneous line is any one of the following materials: AlGaN, GaN, InGaN, GaN, AlGaAs, GaAs.
The material of the medium substrate is any one of the following materials: sapphire, high-resistivity silicon, InP, GaAs, and silicon carbide.
The invention has the beneficial effects that:
(1) the transistor has a fast modulation function, so that the transistor can be used as a core dynamic functional material of the invention to realize high-speed phase shift characteristics.
(2) The terahertz wave phase modulation device adopts the two-dimensional plane artificial microstructure, realizes the phase modulation of terahertz waves through the single-layer array, has a simple structure, can be realized through a micro-machining means, and is mature in process and easy to manufacture.
(3) The invention works through electric control, thereby realizing dynamic broadband regulation and control of the phase. And other complicated excitation modes such as external light excitation, temperature excitation and the like are not needed, so that the device has great advantages in the aspects of miniaturization, practicability and yield.
(4) According to the invention, the equivalent circuit of the whole structure is changed by adjusting the size of the resonance ring and the concentration of the HEMT two-dimensional electron gas, compared with a dipole oscillation structure, the equivalent resonance length is increased in a unit distance, the size of the unit structure is reduced to about one third, and meanwhile, the phase shift range is expanded to 330 degrees, so that the integration level of the device and the control precision of the array are further improved.
(5) According to the invention, the dipole resonance and LC resonance modes are realized through the rapid change of the HEMT two-dimensional electron gas concentration. Since the cell has two resonances when in either the off or on state. Compared with a traditional phase delay line structure, the array is sensitive to the concentration change of HEMT two-dimensional electron gas and has the working characteristic of low on-off ratio.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a schematic diagram of a phase shift unit structure.
Fig. 3 is a graph of the phase shift of the cell structure in the ON and OFF states.
Fig. 4 is a graph of amplitude characteristics of a cell structure in ON and OFF states.
Fig. 5 is a graph of insertion loss of a cell structure with different voltages applied.
FIG. 6 is a graph of phase shift of a cell structure with different voltages applied.
Detailed Description
According to the terahertz electronic control resonance switching type super-surface phase shift array, an artificial microstructure and a transistor are combined to form the terahertz electronic control resonance switching type super-surface phase shift array, a composite array reflecting surface is formed by two-dimensional plane arrangement, and the resonance mode is changed by controlling the on-off of the transistor, so that the large phase control capacity of terahertz waves is realized.
The invention provides an artificial microstructure reflection array with frequency response to terahertz electromagnetic waves in a specific frequency band, and then a microelectronic processing technology is utilized to combine an array structure with a transistor, the on-off of the transistor is controlled by an external voltage, and finally the large phase control capability of the terahertz waves is realized by electrically controlling the resonance mode of the artificial microstructure of the structure.
Referring to fig. 1 and 2, the present invention includes: the phase shift array comprises a metal bottom plate, a dielectric substrate positioned on the metal bottom plate and a phase shift array (phase shift structure layer) positioned on the dielectric substrate, wherein the dielectric substrate is made of a semiconductor material; arranging a phase shift structure layer on the upper surface of the substrate in a metal coating mode; a vertical negative metal feeder is arranged for each row of unit antennas, and all the negative metal feeders in the array are connected with the same external negative electrode; for each phase shift unit, the negative metal feeder extends out of the open resonant ring relatively, two opposite T-shaped branches are formed at the opening by two rectangular metal strips, the top of each T-shaped branch (namely the rectangular metal strip) is arranged on an ohmic patch, the ohmic patch is arranged on a dielectric substrate, and each ohmic patch is provided with a doped heterogeneous line; a vertical anode outgoing line (anode feeder) is arranged for each row of unit antennas and is positioned on the right side of the unit, the anode outgoing line is connected with the doped heterogeneous materials among the tops of all T-shaped branches of the row, and the anode of each row of anode feeders can be independently controlled in a single row. The carrier concentration of the doped heterogeneous material between the tops of the T-shaped branches is controlled by the voltage difference between the external positive electrode and the external negative electrode, on-off regulation is realized, and therefore phase regulation is carried out on incident electromagnetic waves.
The substrate is sapphire, high-resistance silicon, InP, GaAs or silicon carbide.
The feeder line and the unit patches are Au, Ag, Cu or Al.
The material of the ohmic patch is Ti, Al, Ni or Au.
The doped heterostructure material can be AlGaN/GaN, InGaN/GaN or AlGaAs/GaAs.
The polarization deflection reflection array of the artificial microstructure is an M-N array formed by a plurality of units, wherein M is more than 2, and N is more than 2.
Example (b):
the embodiment comprises the following steps:
the metal bottom plate is made of good conductors such as metal aluminum, silver, gold and the like,
a semiconductor substrate made of sapphire, high-resistance silicon, silicon carbide and the like,
and the phase shift units are arranged on the semiconductor substrate in an M multiplied by N orthogonal array mode.
Referring to fig. 2, the phase shift unit includes a resonance ring 3 with an opening and a dipole oscillation structure 4, the dipole oscillation structure 4 is disposed at the opening of the resonance ring, two end points of the resonance ring are respectively connected with a rectangular metal strip, a connection point is located at the center of a long side of the rectangular metal strip, and the long side of the rectangular metal strip is perpendicular to the side of the resonance ring where the opening is located; between two rectangle metal strips at the opening part, the upper surface of medium base plate is provided with the ohm paster, is provided with the doping heterogeneous line above the ohm paster, and the doping heterogeneous line is parallel with two rectangle metal strips and equidistance.
In the phase shift unit array, two sides of each row of phase shift units are respectively provided with a cathode outgoing line 1 and an anode outgoing line 2 along the row line direction, and each row of phase shift units is positioned between the cathode outgoing line and the anode outgoing line corresponding to the row;
in each row, the doped heterogeneous line of the phase shift unit is connected to the anode lead wire of the row, and the split resonant ring is connected to the cathode lead wire of the row;
each cathode lead-out wire is connected with the same cathode bus, and the cathode bus is provided with an external cathode connecting end; the anode lead wires are independent of each other.
The ohmic patch is made of Ti, Al, Ni or Au, and the doped heterojunction line is made of AlGaN/GaN, InGaN/GaN, AlGaAs/GaAs, AlGaAs/InGaAs/InP, etc.
As shown in figures 1 and 2, an anode lead and a cathode lead are respectively arranged at the left side and the right side of each row of units, the anode lead is connected with doped heterogeneous wires between the tops of all T-shaped branches of the row, and all the anode leads are connected with different additional positive electrodes. The carrier concentration of the doped heterogeneous material between the tops of the T-shaped branches is controlled through the voltage difference between the external positive electrode and the external negative electrode, on-off switching is achieved, and then phase regulation and control are carried out on electromagnetic beams.
The terahertz reflected electromagnetic wave phase control circuit realizes phase control of terahertz reflected electromagnetic waves by changing the on-off state of the transistor, and the on-off state of the terahertz reflected electromagnetic wave phase control circuit is controlled by the magnitude of an external voltage. The method specifically comprises the following steps: when the voltage difference loaded by the positive electrode wire and the negative electrode wire which are connected with the electrodes of the transistor in the structure is changed, the transistor is in a cut-off or conducting state.
Simulation results show that the applied voltage changes the cut-off and conduction states of the transistor, and phase control of the terahertz wave beam is achieved. Fig. 3 shows the phase shift characteristics of the phase shift unit at a specific voltage. In the figure, OFF indicates that the transistor under the artificial electromagnetic medium is in a pinch-OFF state at a certain voltage, and ON indicates that the transistor is in a conducting state at no voltage. It can be seen that the reflection phase of the cell structure is obviously changed along with the state of the transistor, at 0.36THz, the cells at ON and OFF have a phase difference of 180 degrees, the maximum phase change of the cells is about 330 degrees, and the adjustable range is large. Fig. 4 shows the amplitude characteristics of the cells, and the insertion loss of the cell structure is small in two states of ON and OFF, so that the dynamically adjustable array can realize high-efficiency modulation of the phase. Fig. 5 and 6 show the response characteristics of the cell structure when different voltages are applied, fig. 5 shows the insertion loss of the phase shift array under different voltages, and fig. 6 shows the phase shift curves of the cells. The voltage change indicates that the concentration of carriers in the HEMT structure is to change. Therefore, the phase shift unit is sensitive to voltage change, when the voltage changes in a small range, the corresponding change of the unit is obvious, the low-switching-ratio work can be realized, and the large-range regulation and control of the phase can be realized at specific voltage. By adjusting the applied voltage, the dynamic regulation and control of the phase can be realized.
Claims (3)
1. The terahertz electric control resonance switching type super-surface phase shift device is characterized by comprising a metal bottom plate, a dielectric substrate and a phase shift structure layer which are arranged layer by layer from bottom to top,
the phase shift structure layer comprises phase shift units arranged in an MXN orthogonal array mode, each phase shift unit comprises a rectangular open resonant ring, the opening of each resonant ring is located at the midpoint of the side where the resonant ring is located, two end points of each resonant ring are respectively connected with a rectangular metal strip at the opening of each resonant ring, the connection point is located in the center of the long side of each rectangular metal strip, and the long side of each rectangular metal strip is perpendicular to the side of the resonant ring where the opening is located; an ohmic patch is arranged on the upper surface of the dielectric substrate between the two rectangular metal strips at the opening, a doped heterogeneous line is arranged above the ohmic patch, the doped heterogeneous line is parallel to and equidistant from the two rectangular metal strips, and M, N are integers which are larger than 2;
in the phase shift unit array, two sides of each row of phase shift units are respectively provided with a cathode outgoing line and an anode outgoing line along the row line direction, and each row of phase shift units is positioned between the cathode outgoing line and the anode outgoing line corresponding to the row;
in each row, the doped heterogeneous line of the phase shift unit is connected to the anode lead wire of the row, and the split resonant ring is connected to the cathode lead wire of the row;
each cathode lead-out wire is connected with the same cathode bus, and the cathode bus is provided with an external cathode connecting end; the anode lead wires are independent of each other.
2. The terahertz electrically controlled resonant switching type super-surface phase shift device as claimed in claim 1, wherein the material of the doped hetero-line is any one of the following materials: AlGaN, GaN, InGaN, GaN, AlGaAs, GaAs.
3. The terahertz electrically controlled resonant switching type super-surface phase shift device as claimed in claim 1, wherein the dielectric substrate is made of any one of the following materials: sapphire, high-resistivity silicon, InP, GaAs, and silicon carbide.
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| CN113036460B (en) * | 2021-02-25 | 2022-10-25 | 联想(北京)有限公司 | Programmable large-scale antenna |
| WO2023286132A1 (en) * | 2021-07-12 | 2023-01-19 | Nippon Telegraph And Telephone Corporation | Beamformer |
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| CN114142898B (en) * | 2021-12-03 | 2022-09-20 | 深圳市大数据研究院 | Intelligent reflecting surface phase shift control method and device and storage medium |
| CN117254262A (en) * | 2023-11-17 | 2023-12-19 | 南京数捷电子科技有限公司 | Coding regulation and control structure of three-dimensional direction far-field wave beam of terahertz wave |
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| CN107275805A (en) * | 2017-04-27 | 2017-10-20 | 北京华镁钛科技有限公司 | A kind of phased array antenna based on Meta Materials electromagnetic property |
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| CN105337033B (en) * | 2015-12-07 | 2017-11-17 | 电子科技大学 | A kind of reflecting antenna of terahertz wave band based on artificial micro-structure binding crystal pipe |
| US9865692B2 (en) * | 2017-05-04 | 2018-01-09 | University Of Electronic Science And Technology Of China | Spatial terahertz wave phase modulator based on high electron mobility transistor |
| CN109814283B (en) * | 2019-03-27 | 2020-08-28 | 电子科技大学 | Low-voltage-driven normally-open terahertz super-surface modulator and preparation method thereof |
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| CN107275805A (en) * | 2017-04-27 | 2017-10-20 | 北京华镁钛科技有限公司 | A kind of phased array antenna based on Meta Materials electromagnetic property |
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| (((metasurface+ or (meta d surface+) or metamaterial+ or (meta d material+) or fss or (frequen+ s select+ s surface+))) and phase+) and (((positive 5d (pole+ or electrode+)) or anod+ or cathod+) and ((negative 5d (pole+ or electrode+)) or cathod+ or anod+);苏晓强;《中国博士学位论文全文数据库 基础科学辑》;20170715;全文 * |
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