CN110444478A - Manufacturing method of thin film transistor, atomic layer deposition device and display panel - Google Patents
Manufacturing method of thin film transistor, atomic layer deposition device and display panel Download PDFInfo
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- CN110444478A CN110444478A CN201910564637.6A CN201910564637A CN110444478A CN 110444478 A CN110444478 A CN 110444478A CN 201910564637 A CN201910564637 A CN 201910564637A CN 110444478 A CN110444478 A CN 110444478A
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- presoma
- metal layer
- thin film
- film transistor
- tft
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- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 45
- 239000010409 thin film Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 111
- 239000002184 metal Substances 0.000 claims abstract description 111
- 238000006243 chemical reaction Methods 0.000 claims abstract description 32
- 239000011261 inert gas Substances 0.000 claims abstract description 19
- 238000010926 purge Methods 0.000 claims abstract description 16
- 239000010410 layer Substances 0.000 claims description 149
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 44
- 229910052750 molybdenum Inorganic materials 0.000 claims description 30
- 229910052782 aluminium Inorganic materials 0.000 claims description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 29
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 28
- 239000004411 aluminium Substances 0.000 claims description 26
- 239000011733 molybdenum Substances 0.000 claims description 25
- 229910052757 nitrogen Inorganic materials 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- 238000009434 installation Methods 0.000 claims description 13
- 239000011241 protective layer Substances 0.000 claims description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- LNDHQUDDOUZKQV-UHFFFAOYSA-J molybdenum tetrafluoride Chemical compound F[Mo](F)(F)F LNDHQUDDOUZKQV-UHFFFAOYSA-J 0.000 claims description 3
- PDKHNCYLMVRIFV-UHFFFAOYSA-H molybdenum;hexachloride Chemical compound [Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[Mo] PDKHNCYLMVRIFV-UHFFFAOYSA-H 0.000 claims description 3
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 claims description 3
- 239000002243 precursor Substances 0.000 abstract description 6
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 12
- 238000002161 passivation Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910014299 N-Si Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- -1 nitric acid Metal oxide Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002633 protecting effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 230000001755 vocal effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
Abstract
The application discloses a manufacturing method of a thin film transistor, an atomic layer deposition device and a display panel. The thin film transistor comprises a metal layer, and the processing step of the metal layer comprises the step of placing the metal layer in a reaction chamber of the atomic layer deposition device; continuously introducing a first precursor for a preset time into the atomic layer deposition device for reaction, staying for a preset time after the introduction, introducing inert gas for purging, and repeating the first preset times; continuously introducing a second precursor for a preset time into the atomic layer deposition device for reaction, staying for a preset time after the introduction, introducing inert gas for purging, and repeating for a second preset time; continuously introducing a third precursor for a preset time into the atomic layer deposition device for reaction, staying for a preset time after the introduction, introducing inert gas for purging, and repeating for a third preset time; and repeating the steps for a fourth preset number of times. The metal layer is processed to prevent oxidation of the metal layer.
Description
Technical field
This application involves field of display technology more particularly to a kind of production methods of thin film transistor (TFT), atomic layer deposition dress
It sets and display panel.
Background technique
(Thin Film Transistor-Liquid Crystal Display, tft liquid crystal are aobvious by TFT-LCD
Display screen) be microelectric technique Yu the ingenious combination of LCD Technology a kind of technology, wherein TFT (Thin Film
Transistor, thin film transistor (TFT)) switch as pixel, when thin film transistor (TFT) is opened, pixel electrode generates voltage, so that liquid
Brilliant molecule deflects, and shows picture.
The metal layer surface layer of thin film transistor (TFT) is easy to be oxidized by oxygen in the fabrication process, when will cause subsequent be etched
Residual is generated, short circuit is caused, seriously affects display performance.
Summary of the invention
The purpose of the application is to provide production method, apparatus for atomic layer deposition and the display panel of a kind of thin film transistor (TFT),
The metal layer surface layer of thin film transistor (TFT) is prevented to be oxidized.
This application discloses a kind of production method of thin film transistor (TFT), the thin film transistor (TFT) includes metal layer, to described
The procedure of processing of metal layer includes:
Metal layer is placed in the reaction chamber of apparatus for atomic layer deposition；
The first presoma that preset time is continually fed into apparatus for atomic layer deposition is reacted, and completion stops after being passed through
The preset time, it is passed through inert gas purge, repeats the first preset times；
The second presoma that preset time is continually fed into apparatus for atomic layer deposition is reacted, and completion stops after being passed through
The preset time, it is passed through inert gas purge, repeats the second preset times；
The third presoma that preset time is continually fed into apparatus for atomic layer deposition is reacted, and completion stops after being passed through
The preset time, it is passed through inert gas purge, repeats third preset times；
Above-mentioned steps are repeated into the 4th preset times and form protective layer.
Optionally, first presoma is molybdenum presoma, material include hexacarbonylmolybdenum, molybdenum chloride, in molybdenum fluoride extremely
Few one kind；Second presoma is aluminium presoma, and material includes trimethyl aluminium, triethyl aluminum, at least one in tert-butyl alcohol aluminium
Kind；The third presoma is nitrogen presoma, and material includes at least one of nitrogen, ammonia, hydrazine；The inert gas packet
Include at least one of argon gas and helium.
Optionally, the molybdenum presoma, aluminium presoma and nitrogen presoma be continually fed into preset time at 0.01 second extremely
Between 0.2 second, the molybdenum presoma and aluminium presoma be passed through preset time than the nitrogen presoma to be passed through preset time long；
The rate that the molybdenum presoma, aluminium presoma and nitrogen presoma are passed through is in 5 ml/mins between 30 ml/mins.
Optionally, the stop preset time of the molybdenum presoma, aluminium presoma and nitrogen presoma 2 seconds to 20 seconds it
Between.
Optionally, the metal layer includes top metal layer, intermediate metal layer and bottom metal layer, the top metal layer, centre
Metal layer and bottom metal layer are to be stacked, and the top metal layer is one layer that metal layer is finally arranged, the atomic layer deposition
Device processes the top metal layer.
Optionally, before the molybdenum presoma, aluminium presoma and the nitrogen that are passed through in the reaction chamber of the apparatus for atomic layer deposition
Drive the ratio of molybdenum atom (Mo) in body, aluminium atom (Al) and nitrogen-atoms (N) are as follows: Mo:Al:N=1:0.5:0.2.
Optionally, the thickness range for the protective layer that the apparatus for atomic layer deposition is formed on the metal layer is 200-
800am。
Optionally, first preset times are 17-23 times, and second preset times are 8-13 times, and the third is pre-
If number is 2-8 times, the 4th preset times are 17-23 times.
Disclosed herein as well is a kind of apparatus for atomic layer deposition, for implementing the production side of thin film transistor (TFT) as described above
Method, the reaction chamber including placing the metal layer；First presoma, the second presoma or third presoma are conveyed described in
Presoma conveying device in reaction chamber；The blowning installation that blowout inert gas purges the metal layer after reaction；
Control the control device of the presoma conveying device and the blowning installation cycle operation.
Disclosed herein as well is a kind of display panel, the display panel includes thin film transistor (TFT), the thin film transistor (TFT)
It is made of the production method of thin film transistor (TFT) recited above.
For scheme of the metal layer of the thin film transistor (TFT) without processing, the application is filled with atomic layer deposition
It sets and metal layer is processed, layer on surface of metal is reacted with the first presoma, the second presoma and third presoma, shape
At protective layer required for one layer, the metal layer under protective layer is separated with air, metal layer is prevented to be oxidized, then will it is each before
The step of driving precursor reactant repeats, and finally again repeats Overall Steps, makes atom doped needed for each presoma
Must be more uniform, it more efficiently prevents from metal layer and is oxidized.
Detailed description of the invention
Included attached drawing is used to provide that a further understanding of the embodiments of the present application, and which constitute one of specification
Point, for illustrating presently filed embodiment, and with verbal description come together to illustrate the principle of the application.Under it should be evident that
Attached drawing in the description of face is only some embodiments of the present application, for those of ordinary skill in the art, is not paying wound
Under the premise of the property made is laborious, it is also possible to obtain other drawings based on these drawings.In the accompanying drawings:
Fig. 1 is exemplary a kind of schematic diagram of thin film transistor (TFT) etching process；
Fig. 2 is a kind of schematic diagram of thin film transistor (TFT) production process of the embodiment of the application；
Fig. 3 is a kind of schematic diagram of thin-film transistor structure of the embodiment of the application；
Fig. 4 is a kind of schematic diagram of display panel of the embodiment of the application；
Fig. 5 is schematic diagram of the apparatus for atomic layer deposition to the processing flow of metal layer of the embodiment of the application；
Fig. 6 is a kind of schematic diagram of apparatus for atomic layer deposition structure of another embodiment of the application.
Wherein, 100, display panel；200, thin film transistor (TFT)；201, metal residual；202, N+ is remained；203, metal aoxidizes
Object；210, the first substrate；220, the first metal layer；230, insulating layer；240, active layer；250, ohmic contact layer；260, second
Metal layer；261, metal layer is pushed up；262, intermediate metal layer；263, bottom metal layer；270, passivation layer；280, electrode layer；300, former
Sublayer precipitation equipment；310, reaction chamber；320, presoma conveying device；330, blowning installation；340, control device.
Specific embodiment
It is to be appreciated that term used herein above, disclosed specific structure and function details, it is only for description
Specific embodiment is representative, but the application can be implemented by many alternative forms, be not construed as only
It is limited to the embodiments set forth herein.
In the description of the present application, term " first ", " second " are used for description purposes only, and it is opposite to should not be understood as instruction
Importance, or implicitly indicate the quantity of indicated technical characteristic.As a result, unless otherwise indicated, " first ", " are defined
Two " feature can explicitly or implicitly include one or more of the features；The meaning of " plurality " is two or two
More than.Term " includes " and its any deformation, mean and non-exclusive include, it is understood that there may be or addition is one or more that other are special
Sign, integer, step, operation, unit, component and/or combination thereof.
In addition, "center", " transverse direction ", "upper", "lower", "left", "right", "vertical", "horizontal", "top", "bottom", "inner",
The term of the orientation or positional relationship of the instructions such as "outside" is that orientation or relative positional relationship based on the figure describe, only
Be that the application simplifies description for ease of description, rather than indicate signified device or element must have a particular orientation,
It is constructed and operated in a specific orientation, therefore should not be understood as the limitation to the application.
Furthermore unless specifically defined or limited otherwise, term " installation ", " connected ", " connection " shall be understood in a broad sense, example
Such as it may be fixed connection or may be dismantle connection, or integral connection；It can be mechanical connection, be also possible to be electrically connected
It connects；It can be directly connected, it can also indirectly connected through an intermediary or the connection inside two elements.For ability
For the those of ordinary skill in domain, the concrete meaning of above-mentioned term in this application can be understood as the case may be.
The production of thin film transistor (TFT) is the deposition of each layer film, mainly includes gate metal layer, insulating layer, active layer, Europe
Nurse contact layer, Source and drain metal level, passivation layer and pixel electrode, wherein ohmic contact layer is usually the α-Si:H adulterated with PH3, is made
It obtains and forms good Ohmic contact between active layer and metal electrode, reduce the contact resistance between active layer and metal layer, mention
The transmission rate of high electronics, in addition, ohmic contact layer also functions to the effect of hole blocking layer, relative to Fermi level, it
Reduce the position of n+ α-Si:H valence band.
In thin film transistor (TFT), since Al (aluminium) and the expansion coefficient difference of ohmic contact layer and passivation layer are larger, attachment
Property it is poor the problems such as, therefore at present source-drain electrode metal layer generally use three-decker, i.e. Mo/Al/Mo, Mo/Al/MoN, Ti/Al/
Ti etc., to the method that the etching of M2 generally uses wet etching, wet etching medical fluid main component is the acetic acid for being largely, a small amount of
Nitric acid and phosphoric acid and micro additive, middle acetic acid play the role of buffer, for adjusting the concentration of etching agent, nitric acid
Metal oxide is oxidized metal into, phosphoric acid oxidizes metal object dissolution.
Below with reference to the accompanying drawings the application is described further with optional embodiment.
Fig. 1 is exemplary the schematic diagram of etching process, as shown in Figure 1, the processing procedure of thin film transistor (TFT) is using four light shields
Technique uses 2W2D after using HTM (Half Tone Mask, intermediate tone mask) masking techniques and GIN and M2 successive sedimentation
Etch process is etched function film and conductive film, wherein HTM exposure technology, so that 200 channel region of thin film transistor (TFT)
Photoresist (PR) thickness it is not easy to control, if photoresist (PR) is excessively thin, etch away M2 for the first time, surface made to form metal oxygen
Compound 203, such as Al2O3Or MoO3, mixed acid is for surface formation Al2O3Or MoO3Etch-rate is slower, it is possible to create
Metal residual 201, second of etching will continue to etch away the metal residual 201 of residual protrusion, but will form N+ residual 202, make
At partial short-circuit, display performance is seriously affected.
As shown in Figures 2 and 3, the embodiment of the present application discloses a kind of thin film transistor (TFT), including the first substrate 210, first
Metal layer 220, insulating layer 230, active layer 240, ohmic contact layer 250, second metal layer 260, passivation layer 270 and electrode layer
280。
The production method of the thin film transistor (TFT), comprising steps of
S1: the first substrate is provided；
S2: the first metal layer is set on first substrate；
S3: insulating layer is set on the first metal layer；
S4: active layer is set on the insulating layer；
S5: ohmic contact layer is set on the active layer；
S6: second metal layer is set on the ohmic contact layer；
S7: above-mentioned film layer is etched；
S8: passivation layer is set in film layer after the etching；
S9: electrode layer is set on the passivation layer.
Wherein, the second metal layer 260 is composed of TiN (titanium nitride)/Al (aluminium)/TiN (titanium nitride), described
TiN is made of ALD (Atomic Layer Deposition, atomic layer deposition) technology.ALD technique is a kind of special change
Gas phase deposition technology is learned, is inhaled by the way that vaporous precursors pulse to be alternately passed through to reaction chamber and chemistry occurs on depositing base surface
Reaction enclosure forms a kind of method of film, uniformity, compactness, step coverage rate and the thickness control of the film layer of ALD deposition
Etc. all have apparent advantage.Certainly, the second metal layer 260 can also be by MoN (molybdenum nitride)/Al (aluminium)/MoN
(molybdenum nitride) composition, MoN are made of ALD technique.
Specifically, the first metal layer 220 is gate metal layer, the second metal layer 260 is source-drain electrode metal layer.
As shown in figure 4, the embodiment of the present application discloses a kind of display panel 100, the display panel 100 includes that film is brilliant
Body pipe 200, the thin film transistor (TFT) 200 include second metal layer 260.
As shown in Figures 3 to 5, described in step S6 the step of second metal layer is set on ohmic contact layer further include:
S61: metal layer is placed in the reaction chamber of apparatus for atomic layer deposition；
S62: the first presoma that preset time is continually fed into apparatus for atomic layer deposition is reacted, after completion is passed through
The preset time is stopped, inert gas purge is passed through, repeats the first preset times；
S63: the second presoma that preset time is continually fed into apparatus for atomic layer deposition is reacted, after completion is passed through
The preset time is stopped, inert gas purge is passed through, repeats the second preset times；
S64: the third presoma that preset time is continually fed into apparatus for atomic layer deposition is reacted, after completion is passed through
The preset time is stopped, inert gas purge is passed through, repeats third preset times；
S65: above-mentioned steps are repeated into the 4th preset times and form protective layer.
For scheme of the metal layer of the thin film transistor (TFT) without processing, the application is filled with atomic layer deposition
It sets and metal layer is processed, layer on surface of metal is reacted with the first presoma, the second presoma and third presoma, shape
At protective layer required for one layer, the metal layer under protective layer is separated with air, metal layer is prevented to be oxidized, then will it is each before
The step of driving precursor reactant repeats, and finally again repeats Overall Steps, makes atom doped needed for each presoma
Must be more uniform, it more efficiently prevents from metal layer and is oxidized.
Wherein, the second metal layer 260 includes pushing up metal layer 261, intermediate metal layer 262 and bottom metal layer 263, described
Top metal layer 261, intermediate metal layer 262 and bottom metal layer 263 are to be stacked, and the top metal layer 261 is second gold medal
Belong to the top of layer 260, the apparatus for atomic layer deposition processes the top metal layer 261, the thin film transistor (TFT) 200
Including passivation layer 270, the film layer after processing is bonded with the passivation layer 270.The application is using ALD technique to second metal layer
260 surface is processed, and the consistency and flatness of film layer can also be improved, and is improved the interfacial characteristics of passivation layer 270, is being pushed up
The surface of metal layer 261 forms a protective layer, and the metal layer under protective layer is separated with air, metal layer is prevented to be oxidized,
Subsequent etch is set not generate various residuals, to prevent short circuit.Here top metal layer 261 can be molybdenum or titanium, centre
Metal layer 262 can be aluminium, and bottom metal layer 263 can be molybdenum or titanium.It is of course also possible to make each layer gold of other metals
Belong to, can also only push up metal layer 261 and intermediate metal layer 262.
Specifically, the thickness range for the protective layer that the apparatus for atomic layer deposition is formed in the second metal layer 260
For 200-800am.Within this range by the thicknesses of layers processed control, it can preferably prevent under air and protective layer
The metal layer in face contacts, and prevents metal layer, and can also prevent metal layer because of processing becomes too thick, guarantee conductivity compared with
It is good.
As shown in table 1 below, by taking second metal layer is molybdenum/aluminium/molybdenum composition as an example, first presoma is molybdenum forerunner
Body, material include at least one of hexacarbonylmolybdenum, molybdenum chloride, molybdenum fluoride；Second presoma is aluminium presoma, material packet
Include at least one of trimethyl aluminium, triethyl aluminum, tert-butyl alcohol aluminium；The third presoma is nitrogen presoma, and material includes nitrogen
At least one of gas, ammonia, hydrazine；The inert gas includes at least one of argon gas and helium.
Specifically, the molybdenum presoma, aluminium presoma and nitrogen presoma be continually fed into preset time at 0.01 second extremely
Between 0.2 second, the molybdenum presoma and aluminium presoma be passed through preset time than the nitrogen presoma to be passed through preset time long；
The rate that the molybdenum presoma, aluminium presoma and nitrogen presoma are passed through in 5 ml/mins between 30 ml/mins, the molybdenum
Between 2 seconds to 20 seconds, first preset times are the stop preset time of presoma, aluminium presoma and nitrogen presoma
17-23 times, second preset times are 8-13 times, and the third preset times are 2-8 times, and the 4th preset times are
17-23 times.Be passed through time, residence time with this and be passed through rate to deposit each atom, the step of various atomic depositions in all follow
Ring repeatedly, so that each atom is distributed on the face of deposition more uniform, be finally again recycled for all steps repeatedly,
It is equivalent to the film layer of processing being divided into multilayer to deposit, heap in layer comes, so that each atom is in a thickness direction
It is distributed more uniform, the protecting effect for the film layer for generating processing is more preferably.Meanwhile it being mixed using nitrogen atom prepared by this method
Substance MoAlN after miscellaneous can form connecting key as Mo-Al-N-Si with the passivation layer (SiNx) of joint, using containing
Common N atom forms covalent bond structure, improves the interface binding power of metal layer and passivation layer, improves the stability of device.
More specifically, the preset time that is passed through of the molybdenum hexacarbonyl is set as 0.02 second, and being passed through for the trimethyl aluminium is default
Time is set as 0.02 second, and the preset time that is passed through of the ammonia is set as 0.01 second, the molybdenum hexacarbonyl, trimethyl aluminium and ammonia
Stop preset time be disposed as 5 seconds, the rate that the molybdenum hexacarbonyl, trimethyl aluminium and ammonia are passed through is set as 20 ml/mins
Clock, first preset times are 20 times, and for second preset times to be 10 times secondary, the third preset times are 5 times, described
4th preset times are 20 times.We can prepare the dopant of various atomic quantities by controlling each cycle-index.
Table 1: the program list of apparatus for atomic layer deposition processing
As shown in table 2 below, the molybdenum presoma that is passed through in the reaction chamber of the apparatus for atomic layer deposition, aluminium presoma and
The ratio of molybdenum atom (Mo) in nitrogen presoma, aluminium atom (Al) and nitrogen-atoms (N) are as follows: Mo:Al:N=1:0.5:0.2, at this
When ratio, the conductivity of the metal layer is best.
Table 2: the conductivity under each atomic ratio
| Serial number | Mo:Al:N | Conductivity (10^4s/m) |
| 1 | 1:0.5:1 | 1.6 |
| 2 | 1:0.5:0.5 | 1.2 |
| 3 | 1:0.5:0.2 | 2.6 |
| 4 | 1:0.2:1 | 1.75 |
| 5 | 1:0.2:0.5 | 1.88 |
| 6 | 1:0.2:0.2 | 1.48 |
As shown in figure 5, another embodiment as the application, discloses a kind of apparatus for atomic layer deposition 300, including place
The reaction chamber 310 of the metal layer；First presoma, the second presoma or third presoma are conveyed to the reaction chamber
Presoma conveying device 320 in 310；The blowning installation that blowout inert gas purges the metal layer after reaction
330；Control the control device 340 of 330 cycle operation of the presoma conveying device 320 and the blowning installation.It will need to add
The metal layer of work is put into after reaction chamber 310, is conveyed different presomas by presoma conveying device 320 and is entered reaction chamber
It is reacted in 310, purging cleaning is carried out to residue or residue by blowning installation 330 after reaction, finally pass through control dress again
340 are set to control 330 cycle operation of presoma conveying device 320 and blowning installation.
Specifically, the reaction chamber 310, presoma conveying device 320, blowning installation 330 and control device 340 can be only
There is one, select to input in different presoma a to reaction chamber 310 by the presoma conveying device 320 and react,
Blowning installation 330 can also be passed through different inert gases.Certainly, it the reaction chamber 310, presoma conveying device 320 and blows
Device of air 330 can have multiple, correspond assembly, i.e. 310, presoma conveying devices 320 of a reaction chamber and one
Blowning installation 330, which is assembled together, to work, multiple presoma conveying devices 320 are corresponding convey a variety of presomas to it is each instead
Room 310 is answered, the different reaction material of each step is separated and is reacted in different reaction chambers 310, reaction can be accurately controlled
Atomic weight prevents from mixing.
It should be noted that the restriction for each step being related in this programme, in the premise for not influencing concrete scheme implementation
Under, it does not regard as being can be the step of making restriction to step sequencing, write on front what is first carried out, be also possible to
It executes, is possibly even performed simultaneously afterwards, as long as this programme can be implemented, all shall be regarded as belonging to the protection model of the application
It encloses.
The technical solution of the application can be widely applied to various display panels, such as twisted nematic (Twisted
Nematic, TN) display panel, plane conversion type (In-Plane Switching, IPS) display panel, vertical orientation type
(Vertical Alignment, VA) display panel, more quadrant vertical orientation type (Multi-Domain Vertical
Alignment, MVA) display panel, applicable above scheme.
The above content is combining specific optional embodiment to be further described to made by the application, cannot recognize
The specific implementation for determining the application is only limited to these instructions.For those of ordinary skill in the art to which this application belongs,
Without departing from the concept of this application, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to the application
Protection scope.
Claims (10)
1. a kind of production method of thin film transistor (TFT), which is characterized in that the thin film transistor (TFT) includes metal layer, to the metal
Layer procedure of processing include:
Metal layer is placed in the reaction chamber of apparatus for atomic layer deposition；
The first presoma that preset time is continually fed into apparatus for atomic layer deposition is reacted, and completion stops default after being passed through
Time, be passed through inert gas purge, repeat the first preset times；
The second presoma that preset time is continually fed into apparatus for atomic layer deposition is reacted, and completion stops default after being passed through
Time, be passed through inert gas purge, repeat the second preset times；
The third presoma that preset time is continually fed into apparatus for atomic layer deposition is reacted, and completion stops default after being passed through
Time, be passed through inert gas purge, repeat third preset times；And
Above-mentioned steps are repeated into the 4th preset times and form protective layer.
2. a kind of production method of thin film transistor (TFT) as described in claim 1, which is characterized in that first presoma is molybdenum
Presoma, material include at least one of hexacarbonylmolybdenum, molybdenum chloride, molybdenum fluoride；
Second presoma is aluminium presoma, and material includes at least one of trimethyl aluminium, triethyl aluminum, tert-butyl alcohol aluminium；
The third presoma is nitrogen presoma, and material includes at least one of nitrogen, ammonia, hydrazine；
The inert gas includes at least one of argon gas and helium.
3. a kind of production method of thin film transistor (TFT) as claimed in claim 2, which is characterized in that before the molybdenum presoma, aluminium
That drives body and nitrogen presoma is continually fed into preset time between 0.01 second to 0.2 second, the molybdenum presoma and aluminium presoma
Be passed through preset time than the nitrogen presoma to be passed through preset time long；The molybdenum presoma, aluminium presoma and nitrogen presoma
The rate being passed through is in 5 ml/mins between 30 ml/mins.
4. a kind of production method of thin film transistor (TFT) as claimed in claim 2, which is characterized in that before the molybdenum presoma, aluminium
The stop preset time of drive body and nitrogen presoma is between 2 seconds to 20 seconds.
5. a kind of production method of thin film transistor (TFT) as described in claim 1, which is characterized in that the metal layer includes top gold
Belong to layer, intermediate metal layer and bottom metal layer, the top metal layer, intermediate metal layer and bottom metal layer are to be stacked, the top
Metal layer is one layer that metal layer is finally arranged, and the apparatus for atomic layer deposition processes the top metal layer.
6. a kind of production method of thin film transistor (TFT) as claimed in claim 2, which is characterized in that the apparatus for atomic layer deposition
Reaction chamber in the molybdenum presoma, aluminium presoma and the nitrogen presoma that are passed through molybdenum atom (Mo), aluminium atom (Al) and nitrogen it is former
The ratio of sub (N) are as follows: Mo:Al:N=1:0.5:0.2.
7. a kind of production method of thin film transistor (TFT) as described in claim 1, which is characterized in that the apparatus for atomic layer deposition
The thickness range of the protective layer formed on the metal layer is 200-800am.
8. a kind of production method of thin film transistor (TFT) as described in claim 1, which is characterized in that first preset times are
17-23 times, second preset times are 8-13 times, and the third preset times are 2-8 times, and the 4th preset times are
17-23 times.
9. a kind of apparatus for atomic layer deposition, for implementing the production of the thin film transistor (TFT) as described in claim 1 to 8 any one
Method characterized by comprising
Reaction chamber places the metal layer；
Presoma conveying device conveys first presoma, the second presoma or third presoma into the reaction chamber；
Blowning installation, blowout inert gas purge the metal layer after reaction；And
Control device controls the presoma conveying device and the blowning installation cycle operation.
10. a kind of display panel, which is characterized in that including thin film transistor (TFT), the thin film transistor (TFT) is claim 1 to 8 times
The production method of thin film transistor (TFT) described in meaning one is made.
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