CN110429099B - Manufacturing method of high-brightness composite substrate - Google Patents
Manufacturing method of high-brightness composite substrate Download PDFInfo
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- CN110429099B CN110429099B CN201910742941.5A CN201910742941A CN110429099B CN 110429099 B CN110429099 B CN 110429099B CN 201910742941 A CN201910742941 A CN 201910742941A CN 110429099 B CN110429099 B CN 110429099B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Abstract
The invention discloses a high brightnessThe manufacturing method of the composite substrate mainly comprises the following steps: depositing a layer of metal coating on the sapphire flat sheet; coating a positive photoresist coating on the metal coating, and selectively removing unnecessary parts by exposure and development to form a group of positive photoresist columns on the metal coating; carrying out ICP etching by taking the positive photoresist column as a barrier layer, and forming a group of mutually independent metal bosses on the sapphire flat sheet; depositing a layer of SiO on the surface of the sapphire flat sheet with the metal boss by using a chemical vapor deposition method2Coating; in SiO2Coating a negative photoresist layer on the coating layer, exposing and developing to selectively remove the undesired portions, thereby forming a SiO layer2Forming a group of negative photoresist columns on the coating; with negative photoresist posts and SiO2And performing ICP etching by using the coating as a barrier layer, thereby obtaining the high-brightness composite substrate. The invention adopts sapphire, metal coating and SiO2The composite substrate is formed, and the brightness of the LED chip can be remarkably improved.
Description
Technical Field
The invention relates to the field of manufacturing of LED substrates, in particular to a manufacturing method of a high-brightness composite substrate.
Background
As is well known, a PSS (patterned sapphire substrate) is located in an upstream process in the LED display industry, plays a crucial role, and can effectively reduce the dislocation density of a GaN epitaxial material, thereby reducing non-radiative recombination in an active region, reducing reverse leakage current, improving the service life of an LED, and other advantages. At present, micro-nano patterned sapphire substrate technology is generally adopted, conical patterns which are arranged periodically are manufactured on the surface of an epitaxial sapphire substrate, and epitaxial growth parameters are controlled to grow GaN with higher quality by utilizing the characteristic of high potential energy of conical inclined planes on the sapphire patterned substrate. However, with the rapid development of the LED display industry, the consumer market has higher and higher requirements for product quality and brightness, and the brightness of the conventional micro-nano patterned sapphire substrate LED chip is a bottleneck in the prior art, which is a revolutionary breakthrough if the brightness can be improved by more than about 2%.
Along with high requirements of the consumer market, the conventional micro-nano patterned sapphire substrate is difficult to meet the requirements, so that a new sapphire substrate preparation method must be adopted to meet the requirements of people from the aspects of materials and structures.
Disclosure of Invention
The invention aims to provide a manufacturing method of a high-brightness composite substrate, which is used for further improving the brightness of a sapphire substrate.
The technical scheme adopted by the invention for solving the technical problems is as follows: a method for manufacturing a high-brightness composite substrate comprises the following steps:
(1) firstly, selecting a flat sapphire sheet with a smooth surface and two polished surfaces, and cleaning to remove impurities on the surface;
(2) a layer of metal coating is vapor-plated on the sapphire flat sheet;
(3) coating a positive photoresist coating on the metal coating, and selectively removing unnecessary parts by exposure and development to form a group of positive photoresist columns on the metal coating;
(4) carrying out ICP etching by taking the positive photoresist column as a barrier layer, and forming a group of mutually independent metal bosses on the sapphire flat sheet;
(5) depositing a layer of SiO on the surface of the sapphire flat sheet with the metal boss by using a chemical vapor deposition method2Coating;
(6) in SiO2Coating a negative photoresist layer on the coating layer, exposing and developing to selectively remove the undesired portions, thereby forming a SiO layer2Forming a group of negative photoresist columns on the coating;
(7) with negative photoresist posts and SiO2The coating is used as a barrier layer to carry out ICP etching, thereby obtaining the high-brightness composite liningAnd (4) bottom.
In order to ensure clean cleaning, the sapphire plain film in the step (1) is firstly scrubbed by acetone for 5-10 minutes and then subjected to concentrated H at 90 DEG C2SO4And H2O2Cleaning for 10-15 minutes in a mixed solution with a volume ratio of 3:1 or 5:2, cleaning for 8-10 minutes by using 80 ℃ deionized water, finally cleaning for 5-10 minutes by using 25 ℃ deionized water, and then spin-drying for 3-10 minutes at a high speed.
Preferably, the thickness of the metal coating in the step (2) is 5-1000 nm, and the metal is one or a mixture of Au, Ag, Ni, Co, Fe, Cu, Pt, Pd and Al.
Preferably, the film thickness of the positive photoresist coating in the step (3) is 0.5-3.0 μm, and the exposure time is 50-400 ms.
Specifically, in the step (4), ICP etching is to send the developed sapphire flat sheet into an etching machine for plasma dry etching, the power of an upper electrode of the etching machine is set to be 100-2000W, the power of a lower electrode of the etching machine is set to be 100-1500W, and BCL (bulk continuous plasma etching) is set3Flow rate of 50-200 sccm, CHF3The flow is 0-20 sccm, the etching temperature is 10-50 ℃, the helium pressure is 1-10 mTorr, and the time is 100-1000 s.
Preferably, SiO in the step (5)2The thickness is 0.5-2.0 μm, and the temperature of the chemical vapor deposition chamber is 100-500 ℃.
Preferably, in the step (6), the thickness of the negative photoresist coating is 0.5-3.0 μm, the sapphire plain film is exposed from the other surface of the sapphire plain film opposite to the surface with the metal boss, the metal boss replaces a photoetching plate to be used as a shield for exposure, the exposure time is 3-20 s, and the photoresist at the position where the metal boss is not shielded is removed during development.
Specifically, in the step (7), ICP etching is to send the developed sapphire flat sheet into an etching machine for plasma dry etching, the power of an upper electrode of the etching machine is set to be 100-2000W, the power of a lower electrode of the etching machine is set to be 100-1500W, and BCL (bulk continuous plasma etching) is set3Flow rate of 50-200 sccm, CHF3The flow is 0-20 sccm, the etching temperature is 10-50 ℃, the helium pressure is 1-10 mTorr, and the time is 100-3000 s.
The invention has the beneficial effects that: the invention adopts sapphire, metal coating and SiO2The composite substrate is formed, and the brightness of the chip can be remarkably improved. Because the chemical property stability of the metal is relatively poor, a layer of SiO is wrapped on the metal2The coating can effectively avoid the defect that metal is easy to oxidize. The bottom metal coating effectively reduces light refraction and increases light reflection efficiency, and SiO2The refractive index of 1.45 is less than that of 1.76 of sapphire, so that the scattering effect of the substrate on light can be effectively improved, and the luminous efficiency of the LED chip is further improved. Compared with the LED chip using the traditional patterned sapphire substrate, the brightness of the LED chip is improved by more than 5 percent.
The invention will be explained in more detail below with reference to the drawings and examples.
Drawings
FIG. 1 is a process flow diagram of the present invention.
FIG. 2 is a schematic cross-sectional view of a sapphire flat sheet after deposition of a metal coating in accordance with the present invention.
FIG. 3 is a schematic cross-sectional view of a positive photoresist coating applied over a metal coating in accordance with the present invention.
FIG. 4 is a schematic cross-sectional view of a positive photoresist column formed on a metal coating according to the present invention.
FIG. 5 is a schematic cross-sectional view of a metal mesa formed by ICP etching according to the present invention.
FIG. 6 shows the deposition of a layer of SiO on a metal bump according to the present invention2Schematic cross-sectional view of the coating.
FIG. 7 shows the present invention on SiO2A cross-sectional view of a negative photoresist coating applied over the coating.
Figure 8 is a schematic cross-sectional view of the present invention exposing and developing a negative photoresist coating.
FIG. 9 shows the present invention on SiO2A cross-sectional view of a set of negative photoresist pillars formed on the coating.
Fig. 10 is a schematic cross-sectional view of a high-brightness composite substrate of the present invention.
Detailed Description
An embodiment is a manufacturing method of a high-brightness composite substrate, a process flow is shown in fig. 1, and the specific manufacturing method comprises the following steps:
(1) firstly, a flat sapphire sheet 1 with a flat surface is provided, and the back surface of the flat sapphire sheet is light-permeable after double-sided polishing treatment. The sapphire plain film 1 is firstly scrubbed by acetone for 5-10 minutes and then subjected to concentrated H at 90 DEG C2SO4And H2O2Cleaning for 10-15 minutes in a mixed solution with a volume ratio of 3:1 or 5:2, cleaning for 8-10 minutes by using 80 ℃ deionized water, finally cleaning for 5-10 minutes by using 25 ℃ deionized water, and then spin-drying for 3-10 minutes at a high speed.
(2) The cleaned sapphire flat sheet 1 is placed in a cavity of an electron gun evaporation plating machine, a metal material used for film plating is bombarded by accelerated electrons, kinetic energy of the electrons is converted into heat energy to heat the metal material to 2000-6000 ℃ to evaporate the metal material, and then the metal material is plated on the surface of the sapphire flat sheet to prepare a layer of metal coating 2 with the thickness of 5-2000 nm, as shown in figure 2, wherein the metal coating 2 is made of one or a mixture of several metals of Au, Ag, Ni, Co, Fe, Cu, Pt, Pd and Al. The metal coating 2 may be formed by a plating process such as atomic layer deposition or sputtering.
(3) A positive photoresist coating 3 with the film thickness of 0.5-3.0 mu m is coated on the metal coating 2, as shown in figure 3, and then exposure treatment is carried out for 50-400 ms, the part which does not need to be exposed is shielded by a photoetching plate during exposure, and the positive photoresist coating is exposed from the upper part of the positive photoresist coating. The unwanted portions are then selectively removed by a developing process to form a set of positive photoresist pillars 4 on the metal coating, as shown in fig. 4.
(4) Feeding the developed sapphire flat sheet 1 into an etching machine to carry out plasma dry etching by taking the positive photoresist column 4 as a barrier layer, setting the power of an upper electrode of the etching machine to be 100-2000W, the power of a lower electrode of the etching machine to be 100-1500W, and carrying out BCL (bulk continuous plasma etching)3Flow rate of 50-200 sccm, CHF3The flow is 0-20 sccm, the etching temperature is 10-50 ℃, the helium pressure is 1-10 mTorr, the time is 100-1000 s, and the residual product is purged by argon after etching2、Ar、N2、C2H4And the main etching gas is not fixed as the same gas, and the corresponding main etching gas is used according to different metals, so that a group of mutually independent metal bosses 5 are formed on the sapphire flat sheet, as shown in fig. 5.
(5) Depositing a layer of SiO on the surface of the sapphire flat sheet with the metal boss 5 by using a plasma enhanced chemical vapor deposition method2Coating 6, shown in FIG. 6, SiO in the direction of the arrow2The direction of deposition of the coating 6. The temperature of the chamber used for PECVD (plasma enhanced chemical vapor deposition) is 100-500 ℃, and SiO is2The thickness is 0.5-2.0 μm, and the fluidity is changed according to the size of the metal pattern, and the thickness is changed by SiO2The coating can provide a protective film for the oxidation of metal and is also due to SiO2The refractive index of 1.45 is less than that of 1.76 of sapphire, so that the scattering effect of the substrate on light can be effectively improved, and the luminous efficiency of the LED chip is further improved.
(6) In SiO2A coating 7 of negative photoresist is applied over the coating 6 as shown in figure 7. The thickness of the negative photoresist coating is 0.5-3.0 μm, and the sapphire flat sheet is exposed from the other side of the sapphire flat sheet opposite to the side with the metal boss, as shown in fig. 8, and the direction of the arrow is the exposure direction. Exposing by replacing a photoetching plate with a metal boss as a shield for 3-20 s in a short time, taking the metal coating shielding part with gaps as an unexposed part, then developing, removing the unexposed part by reacting with a developing solution during developing according to the characteristics of the negative photoresist, and removing the unexposed part by reacting with the developing solution in SiO2A negative photoresist column 8 is formed on the coating as shown in fig. 9. The method reduces the cost of designing a mask or a photoetching plate with patterns and saves the cost.
(7) Sending the developed sapphire flat sheet into an etching machine to make the sapphire flat sheet have negative photoresist columns 8 and SiO2The coating 6 is used as a barrier layer to carry out plasma dry etching, the power of an upper electrode of an etching machine is set to be 100-2000W, the power of a lower electrode is set to be 100-1500W, and BCL (binary coded decimal) is adopted3Flow rate of 50-200 sccm, CHF3The flow is 0-20 sccm, the etching temperature is 10-50 ℃, the helium pressure is 1-10 mTorr, and the time is 100-3000 s, and the high-brightness patterned composite substrate is obtained after etching. As shown in fig. 10.
The invention is described above with reference to the accompanying drawings. It is to be understood that the specific implementations of the invention are not limited in this respect. Various insubstantial improvements are made by adopting the method conception and the technical scheme of the invention; the present invention is not limited to the above embodiments, and can be modified in various ways.
Claims (8)
1. A method for manufacturing a high-brightness composite substrate comprises the following steps:
(1) firstly, selecting a flat sapphire sheet with a smooth surface and two polished surfaces, and cleaning to remove impurities on the surface;
(2) a layer of metal coating is vapor-plated on the sapphire flat sheet;
(3) coating a positive photoresist coating on the metal coating, and selectively removing unnecessary parts by exposure and development to form a group of positive photoresist columns on the metal coating;
(4) carrying out ICP etching by taking the positive photoresist column as a barrier layer, and forming a group of mutually independent metal bosses on the sapphire flat sheet;
(5) depositing a layer of SiO on the surface of the sapphire flat sheet with the metal boss by using a chemical vapor deposition method2Coating;
(6) in SiO2Coating a negative photoresist layer on the coating layer, exposing and developing to selectively remove the undesired portions, thereby forming a SiO layer2Forming a group of negative photoresist columns on the coating; exposing the sapphire plain film from the other surface of the sapphire plain film with the metal boss, replacing a photoetching plate with the metal boss as a shield for exposure, wherein the exposure time is 3-20 s, and removing photoresist at the position where the metal boss is not shielded during development;
(7) with negative photoresist posts and SiO2And performing ICP etching by using the coating as a barrier layer, thereby obtaining the high-brightness composite substrate.
2. The method for manufacturing a high-luminance composite substrate according to claim 1, wherein: the blue diamond in the step (1)Washing the stone flat sheet with acetone for 5-10 min, and then carrying out concentrated H at 90 DEG C2SO4And H2O2Cleaning for 10-15 minutes in a mixed solution with a volume ratio of 3:1 or 5:2, cleaning for 8-10 minutes by using 80 ℃ deionized water, finally cleaning for 5-10 minutes by using 25 ℃ deionized water, and then spin-drying for 3-10 minutes at a high speed.
3. The method for manufacturing a high-luminance composite substrate according to claim 1, wherein: the thickness of the metal coating in the step (2) is 5-1000 nm, and the metal is one or a mixture of more of Au, Ag, Ni, Co, Fe, Cu, Pt, Pd and Al.
4. The method for manufacturing a high-luminance composite substrate according to claim 1, wherein: the film thickness of the positive photoresist coating in the step (3) is 0.5-3.0 μm, and the exposure time is 50-400 ms.
5. The method for manufacturing a high-luminance composite substrate according to claim 1, wherein: and (4) ICP etching, namely feeding the developed sapphire flat sheet into an etching machine for plasma dry etching, setting the power of an upper electrode of the etching machine to be 100-2000W, the power of a lower electrode of the etching machine to be 100-1500W, and setting BCL3Flow rate of 50-200 sccm, CHF3The flow is 0-20 sccm, the etching temperature is 10-50 ℃, the helium pressure is 1-10 mTorr, and the time is 100-1000 s.
6. The method for manufacturing a high-luminance composite substrate according to claim 1, wherein: SiO in the step (5)2The thickness is 0.5-2.0 μm, and the temperature of the chemical vapor deposition chamber is 100-500 ℃.
7. The method for manufacturing a high-luminance composite substrate according to claim 1, wherein: and (4) in the step (6), the thickness of the negative photoresist coating is 0.5-3.0 μm.
8. Fabrication of the high brightness composite substrate of claim 1The method is characterized in that: and (7) ICP etching, namely feeding the developed sapphire flat sheet into an etching machine for plasma dry etching, setting the power of an upper electrode of the etching machine to be 100-2000W, the power of a lower electrode of the etching machine to be 100-1500W, and setting BCL3Flow rate of 50-200 sccm, CHF3The flow is 0-20 sccm, the etching temperature is 10-50 ℃, the helium pressure is 1-10 mTorr, and the time is 100-3000 s.
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