CN110421839A - Diode and its Method of printing based on 3D printing - Google Patents
Diode and its Method of printing based on 3D printing Download PDFInfo
- Publication number
- CN110421839A CN110421839A CN201910683549.8A CN201910683549A CN110421839A CN 110421839 A CN110421839 A CN 110421839A CN 201910683549 A CN201910683549 A CN 201910683549A CN 110421839 A CN110421839 A CN 110421839A
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- China
- Prior art keywords
- printing
- type
- base
- ceramic shell
- diode
- Prior art date
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- Granted
Links
- 238000007639 printing Methods 0.000 title claims abstract description 63
- 238000010146 3D printing Methods 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000000919 ceramic Substances 0.000 claims abstract description 79
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims description 57
- 239000000463 material Substances 0.000 claims description 29
- 230000008018 melting Effects 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 13
- 229910001338 liquidmetal Inorganic materials 0.000 claims description 12
- 239000005416 organic matter Substances 0.000 claims description 10
- 239000002105 nanoparticle Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- 238000007711 solidification Methods 0.000 claims description 4
- 230000008023 solidification Effects 0.000 claims description 4
- 230000003447 ipsilateral effect Effects 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 claims description 2
- UQMRAFJOBWOFNS-UHFFFAOYSA-N butyl 2-(2,4-dichlorophenoxy)acetate Chemical compound CCCCOC(=O)COC1=CC=C(Cl)C=C1Cl UQMRAFJOBWOFNS-UHFFFAOYSA-N 0.000 description 28
- 239000002245 particle Substances 0.000 description 28
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- 239000000203 mixture Substances 0.000 description 13
- 239000000126 substance Substances 0.000 description 11
- 229920000642 polymer Polymers 0.000 description 9
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000011810 insulating material Substances 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005265 energy consumption Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
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- 238000002360 preparation method Methods 0.000 description 5
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000004927 fusion Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 4
- 229930192474 thiophene Natural products 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 239000013049 sediment Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910001152 Bi alloy Inorganic materials 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 2
- 229910001006 Constantan Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 2
- 229910003251 Na K Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 229910000691 Re alloy Inorganic materials 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- NDXSUDIGSOJBLQ-UHFFFAOYSA-N [In][Bi][Zn][Sn] Chemical compound [In][Bi][Zn][Sn] NDXSUDIGSOJBLQ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- OJIJEKBXJYRIBZ-UHFFFAOYSA-N cadmium nickel Chemical compound [Ni].[Cd] OJIJEKBXJYRIBZ-UHFFFAOYSA-N 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 239000011370 conductive nanoparticle Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
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- 238000000465 moulding Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 150000008442 polyphenolic compounds Polymers 0.000 description 2
- 235000013824 polyphenols Nutrition 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- DECCZIUVGMLHKQ-UHFFFAOYSA-N rhenium tungsten Chemical compound [W].[Re] DECCZIUVGMLHKQ-UHFFFAOYSA-N 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229920006305 unsaturated polyester Polymers 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- RHKSESDHCKYTHI-UHFFFAOYSA-N 12006-40-5 Chemical compound [Zn].[As]=[Zn].[As]=[Zn] RHKSESDHCKYTHI-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- QIHHYQWNYKOHEV-UHFFFAOYSA-N 4-tert-butyl-3-nitrobenzoic acid Chemical compound CC(C)(C)C1=CC=C(C(O)=O)C=C1[N+]([O-])=O QIHHYQWNYKOHEV-UHFFFAOYSA-N 0.000 description 1
- -1 FDM printer Substances 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000006011 Zinc phosphide Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- CZJCMXPZSYNVLP-UHFFFAOYSA-N antimony zinc Chemical compound [Zn].[Sb] CZJCMXPZSYNVLP-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- MPZNMEBSWMRGFG-UHFFFAOYSA-N bismuth indium Chemical compound [In].[Bi] MPZNMEBSWMRGFG-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- HOKBIQDJCNTWST-UHFFFAOYSA-N phosphanylidenezinc;zinc Chemical compound [Zn].[Zn]=P.[Zn]=P HOKBIQDJCNTWST-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 1
- 238000000110 selective laser sintering Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- VDNSGQQAZRMTCI-UHFFFAOYSA-N sulfanylidenegermanium Chemical compound [Ge]=S VDNSGQQAZRMTCI-UHFFFAOYSA-N 0.000 description 1
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229940048462 zinc phosphide Drugs 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
- B29C64/10—Processes of additive manufacturing
- B29C64/106—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material
- B29C64/112—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using individual droplets, e.g. from jetting heads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
- B29C64/10—Processes of additive manufacturing
- B29C64/106—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material
- B29C64/118—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using filamentary material being melted, e.g. fused deposition modelling [FDM]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
- B29C64/20—Apparatus for additive manufacturing; Details thereof or accessories therefor
- B29C64/245—Platforms or substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
- B29C64/30—Auxiliary operations or equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y10/00—Processes of additive manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y30/00—Apparatus for additive manufacturing; Details thereof or accessories therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Abstract
The present invention discloses a kind of diode based on 3D printing, is related to 3D printing technique field, and be cascading the first base, the second base and third base in ceramic shell including ceramic shell and by 3D printing；Wherein, the second base includes the p type island region connecting with anode tap and the N-type region that connect with cathode leg；The p type island region and N-type region form the PN junction with unilateral conduction.The present invention also provides a kind of diode Method of printings in 3D printing, effectively solution production stage, save the production time.
Description
Technical field
The present invention relates to 3D printing techniques, and in particular to a kind of 3D printing method for printing diode.
Background technique
3D printing technique, including selective laser sintering, direct metal laser sintering, fused glass pellet, three-dimensional lithographic plate
Printing, digital light processing, fuse manufacture, electron-beam melting molding, selective thermal sintering, powder bed spray head 3 D-printing etc..
Wherein, fused glass pellet is one of current most popular 3D printing technique.
Fused glass pellet, also known as fusion sediment model (FDM).When in use, it is added into FDM printer and is used as former material
Thermoplastic threads are heated to fusing point by the thermoplastic threads of material, FDM printer, and solid state feed stock is become liquid starting material, FDM
Liquid starting material is successively squeezed out the product for stacking and forming 3D shape by printing head by printer.
Diode is common semiconductor devices, including anode, cathode and setting have list between the anode and cathode
To the PN junction of electric conductivity.So far, the processing of semiconductor devices is continued to use always sufficiently complex manufacturing process and is carried out, and needs in silicon wafer
Upper addition p type impurity and N-type impurity, make it mix, spread, and form PN junction, and program is considerably complicated, and energy consumption is high, seriously polluted, clearly
Clean processing cost is high.
In order to simplify the production stage of the semi-conductor electronic devices such as diode, someone expects directly being modeled with fusion sediment
(FDM) semi-conductor electronic device structure is printed on pcb board.However, can be caused due to the stress accumulated in print procedure
The bending of pcb board can not print diode on pcb board at present.
Summary of the invention
It is present to solve by changing the structure of diode the invention is intended to provide a kind of diode based on 3D printing
It cannot be with the mode of 3D printing come the problem of producing diode.
In order to solve the above problem, following scheme is provided:
Based on the diode of 3D printing in this programme, including ceramic shell and being cascading by 3D printing is being made pottery
The first base, the second base and third base in ceramic shell；Second base includes p type island region and the N-type region of printing shaping；
The p type island region and N-type region form the PN junction with unilateral conduction.
The advantages of this programme, is:
The problem of compared to directly semi-conductor electronic device is printed upon on PCB, causes stress etc. now.This programme
The problem of directly each base is printed upon on ceramic shell, not only effectively reduces pcb board stress, moreover it is possible to utilize ceramic shell
The performance of itself radiates, and so that the diode formed after printing is reduced in time after the completion of printing warm inside diode
Degree, avoids damaging diode.
In addition, diode is convenient for utilizing by being stacked structure as the first base, the second base and third base
Fusion sediment models 3D printing technique as (FDM), completes the printing processing of diode.Compared to present semiconductor electronic device
The procedure of processing of part complexity energy consumption, the diode of this spline structure of this programme are effectively omitted procedure of processing, have saved process time,
Reduce energy consumption and environmental pollution.
Further, first base includes the insulating layer connecting with ceramic shell and the cathode leg that connect with N-type region；
The third base includes the insulating layer connecting with ceramic shell and the anode tap that connect with p type island region；First base and second
Insulating layer in base is identical.
Structure setting up and down in this way facilitates carry out 3D printing, is both provided with and makes pottery in the first base and the second base
The insulating layer of ceramic shell connection, increases the insulating properties and stability of diode.
Further, first base includes the anode tap and cathode leg of protruding ceramic shell respectively；It is described
Third base is insulating layer.
N-type region and p type island region in diode can be set in one layer, and the convenient aperture from ceramic shell two sides is direct
Carry out the printing of N-type region and p type island region.
Further, the p type island region is the blocks formed after p-type semiconductor material solidifies；The N-type region is that N-type is partly led
The blocks formed after body material solidification.
Make to be capable of forming PN junction between p type island region and N-type region.
Further, the anode tap and cathode leg are the strip shape body formed after low melting point liquid metal solidifies.
Low melting point liquid metal ensure that low-temperature melting point, allow to complete 3D printing by FDM printer at normal temperature.
Further, the p-type semiconductor material and N-type semiconductor material include semiconductor nanoparticle and organic matter.
The characteristic that semiconductor can be retained by semiconductor nanoparticle makes the semiconductor material to be formed by organic matter
It can be melted into liquid after FDM printer and carry out deposition stacking.
The present invention also provides a kind of diode Method of printing based on 3D printing, with solve now can not be directly in pcb board
The problem of upper printing diode.
Diode Method of printing based on 3D printing, including the following contents:
Make ceramic shell；It is sequentially depositing from the bottom up in ceramic shell and stacks the first base, the second base and third
Base；Printing simultaneously stacks the N-type region of connection with cathode leg and stacks connection and p type island region, P with anode tap in second base
Type area and N-type region form the PN junction with unilateral conduction.
Advantage of the process is that
Deposition stacks each base in ceramic shell, during 3D printing, reduces the stress for substrate, directly
Connect by ceramic shell as substrate carry out using, reduce stress while, utilize ceramic shell increase heat dissipation.
Diode is produced by way of 3D printing, can effectively shorten and produce and process step, saves process time, is reduced
Energy consumption and pollution.
Further, when making ceramic shell, in advance in the two sides of ceramic shell and top aperture；It will by aperture
Printing head is extend into ceramic shell.
By top aperture, so that the printing head of FDM printer is put in ceramic shell and printed.Pass through two sides
Two printing heads can extend into ceramic shell simultaneously from the two sides of ceramic shell and operate by aperture.
Further, it when printing the second base, is beaten simultaneously by ipsilateral two apertures setting up and down of ceramic shell
Print p type island region and N-type region.
Two printing heads are protruded by the ipsilateral aperture of ceramic shell, keep p type island region and N-type region setting up and down same
When form, so that the coupling part of p type island region and N-type region is closely formed PN junction.
Further, when printing the second base, two apertures being symmetrical set by ceramic shell two sides are same
When printing p type island region and N-type region.
The aperture being symmetrical set by ceramic shell two sides can protrude into two printing heads simultaneously, make left and right settings
P type island region and N-type region can form simultaneously, so that the coupling part of p type island region and N-type region is closely formed PN
Knot.
Detailed description of the invention
Fig. 1 is the central cross-sectional view of diode embodiment one of the embodiment of the present invention based on 3D printing.
Fig. 2 is the central cross-sectional view of diode embodiment two of the embodiment of the present invention based on 3D printing.
Specific embodiment
It is further described below by specific embodiment:
Appended drawing reference in Figure of description includes: that anode tap 11, p-type are mixed block 12, cathode leg 21, N-type and mixed
Block 22, insulating layer 32, collets 33, ceramic shell 40, the first aperture 41, the second aperture 42.
Embodiment one
As shown in Figure 1, the diode of the present embodiment, including the ceramic shell 40 in hollow cube and passes through 3D printing
The first base, the second base and third base being mounted in ceramic shell 40 are stacked gradually from the bottom up.
Wherein, it is provided on the left side wall of ceramic shell 40 and stretches out ceramic shell 40 for anode tap 11 and cathode leg 21
Hole.Meanwhile the top of ceramic shell 40 is also provided with the first aperture 41 protruded into for 3D printer printing head, ceramic shell 40
Two the second apertures 42 protruded into for 3D printing spray head are provided on left side wall, in the sedimentary pile poststack for completing three bases, then will
Two the second apertures 42 in first aperture 41 on 40 top of ceramic shell and left side wall block, and form complete ceramic shell
40。
First base successively includes insulating layer 32 and the cathode leg 21 with the stacking connection of insulating layer 32 from top to bottom；Second
Base includes that the N-type connecting with cathode leg 21 p-type mixing block 22 and connect with anode tap 11 mixes block 12；Second base
Block 22 is mixed for N-type and p-type mixes block 12 and forms the PN junction with unilateral conduction.It is that p-type mixes substance that p-type, which mixes block 12,
The blocks of formation is solidified after grain and organic matter mixing, equally, it is that N-type mixes material grains and organic matter is mixed that N-type, which mixes block 22,
The blocks of formation is solidified after conjunction.
Third base is the insulating layer 32 and anode tap 11 connected from top to bottom, and anode tap 11 and p-type mix block 12
Connection.Insulating layer 32 is made of the insulating materials filled；Insulating materials includes polymer.Pass through the first base and third base
In insulating layer, the insulating properties of entire diode can be enhanced.
Anode tap 11 and cathode leg 21 use system liquid metal into strips, and liquid metal is gallium, gallium-indium alloy, gallium tin
At least one of alloy, indium stannum alloy, gallium-indium-tin alloy, gallium indium red brass, gallium indium tin zinc bismuth alloy or Na-K alloy.This
It is all a bit low melting point liquid metal, convenient for carrying out 3D printing operation at normal temperature.
Anode tap 11 and cathode leg 21 can also use the mixture of conductive nanoparticle and organic matter, conductive
Property nano particle be the platinum of partial size 1nm~900nm, gold, silver, copper, iron, aluminium, antimony, bismuth, cadmium, germanium, nickel, rhodium, tantalum, lead, tungsten, rhenium,
Constantan, tungsten-rhenium alloy, nickel-cadmium, carbon nanotube or graphene.
Polymer in insulating materials are as follows: polystyrene, polyimides, polyvinyl alcohol, polymethyl methacrylate or poly-
Phenol ethylene.
Ceramic shell 40 uses aluminium nitride ceramics.
The problem of compared to directly semi-conductor electronic device is printed upon on PCB, causes stress etc. now.This programme
The problem of directly each base is printed upon on ceramic shell, not only effectively reduces pcb board stress, moreover it is possible to utilize ceramic shell
The performance of itself radiates, and so that the diode formed after printing is reduced in time after the completion of printing warm inside diode
Degree, avoids damaging diode.Meanwhile by the liquid metal of low melting point, it can either be used as and mix substance, and can make
For conductive materials, 3D printing is enable to carry out at normal temperature.
Specific implementation process is as follows:
Diode Method of printing based on 3D printing, including the following contents:
Make ceramic shell 40；When making ceramic shell, in advance in the two sides of ceramic shell and top aperture.
By first aperture 41 on top, so that the printing head of FDM printer is put in ceramic shell 40 and beaten
Print.Two the second apertures 42 that N-type mixes block 22 and p-type mixes block 12 are respectively corresponded by left side, block 22 and P are mixed to N-type
Type, which mixes block 12, to be carried out while printing, and when printing N-type mixes block 22 and p-type mixes block 12, keeps two printing heads
Temperature it is identical, the print time is also identical, enables that the p-type to form PN junction mixes block 12 and N-type mixes block 22 and closely connects that
This has partial fusion to form PN junction.Meanwhile it being provided on the right side of ceramic shell 40 for cathode leg 21 and the stretching of anode tap 11
The aperture of ceramic shell 40.
It is sequentially depositing from the bottom up in ceramic shell 40 and stacks the first base, the second base and third base.
When printing the first base, sequence printing insulating layer 32 and cathode leg 21, then pass through two from the bottom up
A 3D printing spray head gos deep into the second aperture 42, while printing that N-type mixes block 22 and p-type mixes block 12, forms PN junction.It is printing
When forming PN junction, maintain two 3D printing spray heads at the same temperature, the same time is by the second aperture 42 to outside ceramics
Injecting p-type ink ductor and N-type semiconductor ink in shell 40, are connecing P-type semiconductor ink and N-type semiconductor ink each other
The part of touching is close-connected simultaneously, and rapid condensation mixes block 12 at p-type and N-type mixes block 22, forms PN junction.
When printing, the close connection of surrounding time sequence makes 21 He of cathode leg in the first base for three bases
Anode tap 11 in third base can mix block 22 with the N-type in the second base respectively and p-type mixes the connection of block 12.
After printed second base, third base is printed according to the method for the first base of printing, first in the P of the second base
Type mixes printing anode tap 11 on block 12, and insulating layer 32 is then printed on anode tap 11.
Wherein, p-type is mixed block 12 and is beaten using connecting P-type semiconductor ink made of four thiophene PQT by poly- 3,3 '-dialkyl group
Print.
N-type mixes block 22 and uses the N-type semiconductor ink printed made of ladder polymer BBL etc..
Cathode leg 21 and anode tap 11 all use the conductive metal ink printed made of 0.5wt% gallium oxide.
The 3D printer Lite 300 of the equal Cai Liantai of 3D printer in the present embodiment is respectively adopted for three bases in a life
Four 3D printers in producing line are successively printed from the bottom up, wherein making printing the second base, are needed with two
Two printing heads on 3D printer carry out simultaneously.
By using P-type semiconductor ink and N-type semiconductor ink in the present embodiment, p-type can be made to mix after printing
Block 12 and N-type mix 22 rapid condensation of block into PN junction, and PN junction could be molding after being sintered annealing compared to traditional PN profile material
Situation, the present embodiment are effectively saved sintering step；Meanwhile marking ink has exactly been used, and it has saved and has mixed step, it is directly logical
It crosses ink printed and comes out that p-type mixes block and N-type mixes block.
Embodiment two
The present embodiment is substantially as shown in Fig. 2: the diode of the present embodiment, the ceramic shell 40 including being in hollow cube
And stack gradually the first base, the second base and third base being mounted in ceramic shell 40 from the bottom up by 3D printing
Layer.
Wherein, it is provided on the left side wall and right side wall of ceramic shell 40 and stretches out ceramics for anode tap 11 and cathode leg 21
The hole of shell 40.Meanwhile it being also provided on the top of ceramic shell 40 and the wall of the left and right sides and being protruded into for 3D printer printing head
Aperture, complete the sedimentary pile poststack of three bases, then the aperture on 40 top of ceramic shell blocked, forming complete ceramics
Shell 40.
First base includes the pole lead 11, collets 33 and cathode leg 21 of positive strip from left to right；Second base packet
The N-type region for including the p type island region connecting with anode tap and being connect with cathode leg；P type island region and N-type region, which are formed, has unilateral conduction
PN junction.Second base is followed successively by that p-type mixes block 12 and N-type mixes block 22 from left to right.It is that p-type mixes object that p-type, which mixes block 12,
The blocks of formation is solidified after matter particle and organic matter mixing, equally, it is that N-type mixes material grains and organic that N-type, which mixes block 22,
The blocks of formation is solidified after object mixing.
Third base is insulating layer, is filled with insulating materials；The insulating materials includes polymer.Pass through insulating materials
The insulating layer formed, i.e. third base are filled, the PN junction formed in ceramic shell can be protected, further enhance insulating properties.
Anode tap 11 and cathode leg 21 use system liquid metal into strips, and liquid metal is gallium, gallium-indium alloy, gallium tin
At least one of alloy, indium stannum alloy, gallium-indium-tin alloy, gallium indium red brass, gallium indium tin zinc bismuth alloy or Na-K alloy.This
It is all a bit low melting point liquid metal, convenient for carrying out 3D printing operation at normal temperature.
Anode tap 11 and cathode leg 21 can also use the mixture of conductive nanoparticle and organic matter, conductive
Property nano particle be the platinum of partial size 1nm~900nm, gold, silver, copper, iron, aluminium, antimony, bismuth, cadmium, germanium, nickel, rhodium, tantalum, lead, tungsten, rhenium,
Constantan, tungsten-rhenium alloy, nickel-cadmium, carbon nanotube or graphene.
P-type mixes material grains and N-type is mixed material grains and can also be added directly into semiconductor nanoparticle, is formed
P-type marking ink or N-type marking ink.Wherein, semiconductor nanoparticle include partial size 1nm~900nm germanium sulfide particle,
Germanium selenide particle, telluride germanium particle, bismuth indium particle, indium arsenide particle, indium antimonide particle, indium oxide particles, indium phosphide particle,
GaAs particle, gallium phosphide particle, indium sulfide particle, indium selenide particle, indium tin oxide particles, telluride indium particle, lead oxide
Grain, vulcanized lead particle, lead selenide particle, lead telluride particle, silication magnesium granules, granules of stannic oxide, chlorination tin particles, artificial gold
Grain, selenizing tin particles, telluride tin particles, vulcanization Argent grain, selenizing Argent grain, telluride Argent grain, tellurium oxide particle, zinc oxide
Grain, zinc arsenide particle, zinc antimonide particle, zinc phosphide particle, zns particle, cadmium sulfide particle, boron oxide granule, zinc selenide
One or more of grain or zinc telluridse particle.Organic matter in semiconductor material are as follows: rubrene or pentacene.
Polymer can also be added in semiconductor material to replace organic matter, the polymer half of semiconductor material are as follows: poly- 3-
Hexyl thiophene, poly- 3,3 '-dialkyl group connect four thiophene, poly- 3 arylamine.
These are all common semiconductor nanoparticles, and semiconductor material includes these semiconductor nanoparticles and organic
Object is printed after so that the semiconductor material to be formed is melted by FDM printer.
Polymer in insulating materials are as follows: polystyrene, polyimides, polyvinyl alcohol, polymethyl methacrylate or poly-
Phenol ethylene.
Ceramic shell 40 uses aluminium nitride ceramics.
The problem of compared to directly semi-conductor electronic device is printed upon on PCB, causes stress etc. now.This programme
The problem of directly each base is printed upon on ceramic shell, not only effectively reduces pcb board stress, moreover it is possible to utilize ceramic shell
The performance of itself radiates, and so that the diode formed after printing is reduced in time after the completion of printing warm inside diode
Degree, avoids damaging diode.Meanwhile by the liquid metal of low melting point, it can either be used as and mix substance, and can make
For conductive materials, 3D printing is enable to carry out at normal temperature.
Specific implementation process is as follows:
Diode Method of printing based on 3D printing, including the following contents:
Make ceramic shell 40；When making ceramic shell, in advance in the two sides of ceramic shell and top aperture.
By top aperture, so that the printing head of FDM printer is put in ceramic shell 40 and printed.Pass through two
The mounting hole that side is opened enables cathode leg 21 and anode tap 11 to stretch out ceramic shell 40.Simultaneously by above mounting hole
Two side opening enable two printing heads be extend into ceramic shell 40 simultaneously and print p type island region and N-type region, make rapid condensation
Block 12 is mixed at p-type and while N-type mixes block 22, is made closely to connect between the two, is formed PN junction.
It is sequentially depositing from the bottom up in ceramic shell 40 and stacks the first base, the second base and third base；Wherein
Cathode leg 21 and anode tap 11 separated from each other are formed in one base stretches out ceramic shell 40.
When printing the first base, sequence direction successively prints cathode leg 21, collets 33 and anode tap 11.
Collets 33 between cathode leg 21 and anode tap 11, for separating cathode leg and anode tap, in this way
Sequence prints, and facilitates operation.
Second base connects N-type region and p type island region, p type island region with the stacked on top of anode tap 11 in cathode leg 21 respectively
The PN junction with unilateral conduction is formed with N-type region.
When printing the second base, sequence prints P-type semiconductor block and N-type semiconductor block.
P-type semiconductor block is the blocks formed after p-type semiconductor material solidifies, and same n type semiconductor piece is that N-type is partly led
The blocks formed after body material solidification.P-type semiconductor and N-type semiconductor are directly printed, is avoided and existing mixed and spread
Step.
When printing P-type semiconductor block and N-type semiconductor block, successively prints p-type and mix block, semiconductor piece and N-type
Mix block.
P-type semiconductor block is to joined p-type in a semiconductor material to mix substance, and same n type semiconductor piece is partly to lead
It joined N-type in body material and mix substance, p-type is mixed into substance, semiconductor material and N-type directly by way of 3D printing and is joined
Miscellaneous material is all successively printed after melting, neither influences the formation of PN junction, and can be further simplified operation step
Suddenly.
P-type mix substance and N-type to mix substance be low melting point.
Step is mixed in order to save, P-type semiconductor is partly led using connecting p-type made of four thiophene PQT by poly- 3,3 '-dialkyl group
Body ink printed；N-type semiconductor uses the N-type semiconductor ink printed made of ladder polymer BBL etc.；Cathode line and anode
Line all uses the conductive metal ink printed made of 0.5wt% gallium oxide.
The 3D printer Lite 300 of same Cai Liantai in the present embodiment, for P-type semiconductor, N-type semiconductor and electrode
Line (cathode leg, anode tap), be respectively adopted three 3D printers on a production line carried out from the bottom up according to
Secondary printing.
In printing, it gets out the conductive metal ink made of 0.5wt% gallium oxide first, by poly- 3,3 '-dioxanes
Base connects P-type semiconductor ink made of four thiophene PQT, the N-type semiconductor ink made of ladder polymer BBL etc., Yi Jiyou
Then insulation inks made of polystyrene are successively printed according to three bases of progress the step of being previously mentioned.
As liquid metal, p-type mix substance and N-type to mix substance be equally low melting point, it is convenient at normal temperature
By FDM printer by each substance and material liquefaction, enables printers to come out the file printing after melting, pass through deposition
It stacks and forms the diode that 3D printing comes out.
The preparation process of conventional diode generally comprises the steps such as thermal oxide, doping, alloy, cleaning, test, welding encapsulation
Suddenly, wherein use high temperature thermal diffusion or ion implantation technique as doping step 1, in order to control doped region, which is also needed
It repeatedly to carry out photoresist, photoetching, remove the processes such as photoresist, the equipment of process and needs is all extremely complex.It is beaten by 3D
The mode of print produces diode, can effectively shorten and produce and process step, saves process time, reduces energy consumption and pollution.
Block 12 and cathode leg 21 are mixed in order to increase the connectivity of each base, especially anode tap 11 and p-type
And N-type mixes the connection between block 22, can solidify glue sticking by UV.Wherein, UV solidification glue is UV epoxy acrylate, UV
One of urethane acrylate, UV polyether acrylate, UV polyester acrylate and UV unsaturated polyester (UP) are a variety of.
Diode preparation method provided by the present invention can significantly simplify doping and alloy extremely complex in traditional handicraft
Step does not have lithography step in entire preparation method, does not need special diffusion or ion implantation device, considerably reduce two
The equipment requirement of pole pipe preparation, can be effectively reduced its production cost；
The diode structure and performance that diode preparation method provided by the present invention is prepared are stablized, and cost is lower,
It has a extensive future, theoretical and practical significance is great.
Embodiment described in this description belongs to preferred embodiment, related movement not necessarily this hair
Necessary to bright embodiment.Above with a general description of the specific embodiments the present invention is made to retouch in detail
It states, but on the basis of the present invention, it can be made some modifications or improvements, this is apparent to those skilled in the art
's.Therefore, these modifications or improvements without departing from theon the basis of the spirit of the present invention, belong to claimed
Range.
The records such as the specific embodiment in above instructions can be used for explaining the content of claim.
Claims (10)
1. the diode based on 3D printing, it is characterised in that: be cascading including ceramic shell and by 3D printing
The first base, the second base and third base in ceramic shell；Second base includes p type island region and the N-type of printing shaping
Area；The p type island region and N-type region form the PN junction with unilateral conduction.
2. the diode according to claim 1 based on 3D printing, it is characterised in that: first base includes and ceramics
The insulating layer of cage connection and the cathode leg being connect with N-type region；The third base includes the insulation connecting with ceramic shell
Layer and the anode tap being connect with p type island region；First base is identical with the insulating layer in the second base.
3. the diode according to claim 1 based on 3D printing, it is characterised in that: first base include respectively to
The outer anode tap and cathode leg for stretching out ceramic shell；The third base is insulating layer.
4. the diode according to claim 1 based on 3D printing, it is characterised in that: the p type island region is P-type semiconductor material
The blocks formed after material solidification；The N-type region is the blocks formed after N-type semiconductor material solidifies.
5. the diode according to claim 2 or 3 based on 3D printing, it is characterised in that: the anode tap and cathode
Lead is the strip shape body formed after low melting point liquid metal solidifies.
6. the diode according to claim 4 based on 3D printing, it is characterised in that: the p-type semiconductor material and N-type
Semiconductor material includes semiconductor nanoparticle and organic matter.
7. the diode Method of printing based on 3D printing, it is characterised in that: including the following contents:
Make ceramic shell；It is sequentially depositing from the bottom up in ceramic shell and stacks the first base, the second base and third base；
Printing simultaneously stacks the N-type region of connection with cathode leg and stacks connection and p type island region, p type island region with anode tap in second base
The PN junction with unilateral conduction is formed with N-type region.
8. the diode Method of printing according to claim 7 based on 3D printing, it is characterised in that: in production ceramic shell
When, in advance in the two sides of ceramic shell and top aperture；Printing head is extend into ceramic shell by aperture.
9. the diode Method of printing according to claim 8 based on 3D printing, it is characterised in that: printing the second base
When, p type island region and N-type region are printed simultaneously by ipsilateral two apertures setting up and down of ceramic shell.
10. the diode Method of printing according to claim 8 based on 3D printing, it is characterised in that: printing the second base
When layer, two apertures being symmetrical set by ceramic shell two sides while p type island region and N-type region are printed.
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