CN110416355B - Process for preparing crystalline silicon solar cell by solution method - Google Patents

Process for preparing crystalline silicon solar cell by solution method Download PDF

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CN110416355B
CN110416355B CN201910614954.4A CN201910614954A CN110416355B CN 110416355 B CN110416355 B CN 110416355B CN 201910614954 A CN201910614954 A CN 201910614954A CN 110416355 B CN110416355 B CN 110416355B
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silicon wafer
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phosphorus
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黄仕华
张美影
陈达
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Zhejiang Normal University CJNU
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a process for preparing a crystalline silicon solar cell by a solution method, which comprises the steps of adding ethanol, polyethylene glycol, vinyl trimethoxy silane and the like into a phosphoric acid solution as a phosphorus diffusion solution source, uniformly coating diffusion solution on the surface of a silicon wafer by adopting an ultrasonic atomization spraying method, and then diffusing phosphorus at high temperature to obtain uniform doping concentration on the surface. According to the invention, a solution spraying method is adopted to prepare the titanium dioxide anti-reflection film to replace a silicon nitride anti-reflection film prepared by a PECVD method, and a microemulsion consisting of Anionic Polyacrylamide (APAM), isopropanol and the like is added into a titanium tetrachloride solution to serve as a precursor solution of a titanium dioxide film, so that the passivation function of the film on the silicon surface is improved.

Description

Process for preparing crystalline silicon solar cell by solution method
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a process for preparing a crystalline silicon solar cell by a solution method.
Background
At present, crystalline silicon solar cells occupy more than 90% of the photovoltaic market, and the mainstream crystalline silicon cell preparation process mainly comprises the following steps: cleaning and texturing, diffusing, removing phosphorosilicate glass, depositing a silicon nitride anti-reflection film, printing an electrode, sintering at high temperature and the like. The diffusion is the most critical process, and a p-n junction is formed by diffusion to generate a built-in electric field and separate photon-generated carriers (electrons and holes), so that the photon-generated carriers are finally collected by two electrodes on the front surface and the back surface of a silicon wafer respectively. At present, a mainstream crystalline silicon cell mainly uses a p-type crystalline silicon chip, and a phosphorus oxychloride liquid source is adopted to diffuse to form a p-n junction in the existing industrial production. Phosphorus oxychloride is the most used doping source in the solar cell industry at present, is a colorless and transparent toxic liquid with asphyxiating smell, is extremely easy to volatilize and hydrolyze, and therefore has high requirement on the sealing property of a diffusion system. Phosphorus oxychloride is decomposed at the temperature of more than 600 ℃ to generate phosphorus pentachloride and phosphorus pentoxide, the generated phosphorus pentoxide reacts with silicon at the diffusion temperature (usually 900 ℃) to generate silicon dioxide and phosphorus atoms, phosphorus silicate glass is formed on the surface of a silicon wafer, and then the phosphorus atoms are diffused into the silicon to form a p-n junction. When the phosphorus oxychloride is decomposed thermally, the decomposition is not sufficient without oxygen, the generated phosphorus pentachloride is not easy to decompose, and the phosphorus pentachloride has corrosion effect on silicon and can damage the surface state of a silicon wafer. However, in the presence of oxygen, phosphorus pentachloride is further decomposed into phosphorus pentoxide and gives off chlorine, which is a highly toxic gas with a strong pungent odor. At present, the anti-reflection layer-silicon nitride of the crystalline silicon cell is prepared by using a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, which is the most expensive equipment required in the process of preparing the cell, and the used reaction gas silane is toxic, flammable and explosive.
Since phosphorus oxychloride liquid and silane gas used in the conventional preparation process of the crystalline silicon solar cell are toxic, flammable and explosive, waste gas needs to be treated before being discharged into the atmosphere, and the cost for depositing silicon nitride by using the PECVD method is high, a simple, environment-friendly and low-cost preparation method of the crystalline silicon cell needs to be developed. The use of spin coating phosphoric acid (H) on silicon wafers has been reported in the literature3PO4) The solution is then annealed at high temperature to achieve the purpose of phosphorus diffusion doping. The phosphorus doping principle is as follows: phosphoric acid loses part of water at 213 ℃ and becomes pyrophosphoric acid (H)4P2O7) At 300 deg.C, a water molecule is lost and becomes metaphosphoric acid (HPO)3) When the temperature continues to rise to 480 ℃, all water molecules lose to form phosphorus pentoxide. Phosphorus pentoxide reacts with silicon at diffusion temperatures to form silicon dioxide and phosphorus atoms. In order to increase the stability of the phosphoric acid spin-coating solution, organic solvents such as ethanol, isopropanol or dibutanol are usually added, but from the existing literature, the wetting property of the phosphoric acid spin-coating solution and the silicon surface is poor, so that the spin-coating solution is difficult to be uniformly spin-coated on the silicon surface, and the uniformity of the phosphorus doping concentration on the silicon surface is poor. In addition, in order to increase the light absorption of the silicon wafer, texturing is usually performed on the surface of the silicon wafer, and spin coating of a phosphoric acid doping solution on the surface of the textured silicon wafer results in that the spin coating solution is difficult to reach the bottom of a pyramid on the surface of the silicon wafer, so that the uniformity of phosphorus doping is also poor.
In order to replace the silicon nitride anti-reflection film deposited by the PECVD method, a silicon dioxide spin coating solution is used to form silicon dioxide at a high temperature or form a silicon dioxide anti-reflection film during high-temperature oxidation, but the Fire-through (Fire-through) capability of silver paste in the silicon dioxide film is very weak, so that the contact performance between a silver electrode and silicon is poor, the contact resistance is increased, and the efficiency of the battery is affected. Because titanium dioxide has a better fire-through function than silicon dioxide when silver paste is sintered at high temperature, silver can penetrate through titanium dioxide to form good electric contact.
In conclusion, the process for preparing the titanium dioxide anti-reflection layer and the phosphorus diffusion layer of the crystalline silicon solar cell with low cost is developed, the uniform distribution of the phosphorus doping concentration on the silicon surface is ensured, the titanium dioxide film and the silver paste have good burn-through function, and the process has important significance for reducing the production cost of the crystalline silicon solar cell and reducing the pollution to the environment.
Disclosure of Invention
The invention aims to provide a process for preparing a solar cell, which has good phosphorus diffusion effect and a titanium dioxide anti-reflection film.
Therefore, the technical scheme adopted by the invention is as follows:
1) taking a p-type monocrystalline silicon wafer with two unpolished sides, firstly heating the p-type monocrystalline silicon wafer in a water bath at 80 ℃ for 20min by using a 20% sodium hydroxide solution to remove a damaged layer on the surface of the silicon wafer, and after washing by using deionized water, removing an oxide layer on the surface of the silicon wafer by using a 1% hydrofluoric acid solution to form a hydrophilic surface; then, texturing the silicon wafer, wherein a texturing solution consists of aqueous solutions of 1.0 wt% of sodium hydroxide, 1.0 wt% of sodium silicate and 8 wt% of isopropanol, and the texturing temperature and time are 80 ℃ and 40 min; polishing the silicon wafer at room temperature by using a mixed solution of hydrofluoric acid, nitric acid and acetic acid with the ratio of 1:3:5, smoothing gullies at the bottom of a pyramid formed by silicon wafer texturing for 30s, and then washing the silicon wafer with deionized water;
2) cleaning the textured silicon wafer by using a mixed solution (concentration ratio is 1:1:6) of hydrochloric acid, hydrogen peroxide and deionized water at 80 ℃ for 15 min; then treating with mixed solution of ammonia water, hydrogen peroxide and deionized water (concentration ratio is 1:1:7) at 80 deg.C for 15 min;
3) taking 350ml of 2-5% phosphoric acid solution, respectively adding 30ml of ethanol, 8ml of polyethylene glycol (molecular weight is 200) and 5ml of vinyl trimethoxy silane, and uniformly mixing to obtain a phosphorus diffusion solution;
4) atomizing the prepared phosphorus diffusion solution by using an ultrasonic transducer, and carrying the atomized phosphorus diffusion solution to the surface of a silicon wafer by using nitrogen; the heating temperature of the silicon wafer substrate is 50-60 ℃, the atomization amount is 10-15L/min, and the nitrogen pressure is 1.3 atm;
5) after the spraying is finished, the silicon wafer is firstly dried in a drying oven at 150 ℃ for 15min, and then is put into a high-temperature furnace under the nitrogen protection atmosphere for annealing treatment, wherein the annealing temperature is as follows: annealing at 850-900 ℃ for 15-25 min;
6) soaking the silicon wafer obtained in the previous step in 5-10% hydrofluoric acid solution to remove phosphorosilicate glass on the surface, and cleaning the silicon wafer by using a mixed solution of hydrochloric acid, hydrogen peroxide and deionized water (the concentration ratio is 1:1:6), wherein the temperature is 80 ℃, and the time is 15min, so as to remove residual impurities on the surface of the silicon wafer;
7) slowly dropping 1.64ml of titanium tetrachloride solution into 100ml of hydrochloric acid solution (the mass concentration is 3.6 percent), and strongly stirring in a cold water bath to prepare solution A; adding 10g of Anionic Polyacrylamide (APAM) and 15ml of isopropanol into the solution A, and uniformly mixing to obtain a solution B; adding 1.2ml of 25% concentrated ammonia water into the solution B, and stirring for 25min to prepare titanium dioxide precursor microemulsion;
8) atomizing the prepared titanium dioxide precursor microemulsion by using an ultrasonic transducer, and carrying the atomized titanium dioxide precursor microemulsion to the surface of the silicon wafer with the phosphorosilicate glass removed by using nitrogen; the heating temperature of the silicon chip substrate is 150-200 ℃, the nitrogen gas pressure is 1.3atm, and the atomization amount is 30-50L/min;
9) and coating silver paste on the phosphorus diffusion surface of the silicon wafer by adopting screen printing, coating aluminum paste on the non-diffusion surface, then placing the silicon wafer into a drying oven at 150 ℃ for baking for 10min, and finally placing the silicon wafer into a high-temperature furnace at 850-900 ℃ for annealing for 20 min.
In order to improve the uniformity of the phosphorus doping concentration on the surface of the silicon wafer, the invention provides that ethanol, polyethylene glycol, vinyl trimethoxy silane and the like are added into phosphoric acid solution to serve as a phosphorus diffusion solution source, the diffusion solution is uniformly coated on the surface of the silicon wafer by adopting an ultrasonic atomization spraying method, and then phosphorus is diffused at high temperature so as to obtain the uniform doping concentration on the surface. According to the invention, a solution spraying method is adopted to prepare the titanium dioxide anti-reflection film to replace a silicon nitride anti-reflection film prepared by a PECVD method, and a microemulsion consisting of Anionic Polyacrylamide (APAM), isopropanol and the like is added into a titanium tetrachloride solution to serve as a precursor solution of a titanium dioxide film, so that the passivation function of the film on the silicon surface is improved.
Detailed Description
1. Silicon wafer cleaning and texturing
The silicon wafer for experiment is a diamond wire-cut p-type monocrystalline silicon wafer with two unpolished sides and the area of 4 multiplied by 4cm2The thickness is 180 mu m, the crystal orientation is (100), and the resistivity is 2-5 omega-cm. Firstly, a 20% sodium hydroxide solution is heated in a water bath at 80 ℃ for 20min to remove a damaged layer on the surface of a silicon wafer, and after the silicon wafer is washed by deionized water, a 1% hydrofluoric acid solution is adopted to remove an oxide layer on the surface of the silicon wafer to form a hydrophilic surface. Secondly, texturing the silicon wafer, wherein a texturing solution mainly comprises aqueous solutions of 1.0 wt% of sodium hydroxide, 1.0 wt% of sodium silicate and 8 wt% of isopropanol, and the texturing temperature and the texturing time are respectively 80 ℃ and 40 min. Thirdly, smoothing silicon wafer texture making to form pyramid valley bottom gullies at room temperature for 30s by using polishing solution (mixed solution of hydrofluoric acid, nitric acid and acetic acid, concentration ratio is 1:3:5), and then washing with deionized water.
2. Phosphorus diffusion doping by ultrasonic atomization spraying method
Before spraying the phosphorus diffusion solution, firstly, cleaning a textured silicon wafer by using a mixed solution of hydrochloric acid, hydrogen peroxide and deionized water (the concentration ratio is 1:1:6), wherein the temperature is 80 ℃, and the time is 15 min; secondly, in order to make the surface of the silicon wafer hydrophilic, a mixed solution (concentration ratio is 1:1:7) of ammonia water, hydrogen peroxide and deionized water is used for processing, the temperature is 80 ℃, and the time is 15 min.
2.1 preparation of phosphorus diffusion solution
And taking 350ml of 2-5% phosphoric acid solution, respectively adding 30ml of ethanol, 8ml of polyethylene glycol (molecular weight is 200), 5ml of vinyl trimethoxy silane and other additives, and then uniformly mixing by continuously shaking to obtain the phosphorus diffusion solution source.
2.2 spraying of phosphorus diffusion solution
And atomizing the prepared phosphorus diffusion solution by using an ultrasonic transducer, and carrying the phosphorus diffusion solution to the surface of the silicon wafer by using nitrogen. The spraying amount of the solution can be controlled by adjusting parameters such as the size of the atomization amount, the nitrogen pressure, the spraying time and the like. The heating temperature of the substrate is 50-60 ℃, the atomization amount is 10-15L/min, and the nitrogen pressure is 1.3 atm.
2.3 phosphorus diffusion
After the spraying is finished, the silicon wafer is firstly dried in a drying oven at 150 ℃ for 15min, then is put into a high-temperature furnace under the nitrogen protection atmosphere for annealing treatment, and the square resistance of the silicon wafer and the depth of a p-n junction formed by phosphorus diffusion can be controlled by adjusting the annealing temperature and the annealing time. The annealing temperature is as follows: the annealing time is 15-25 min at 850-900 ℃.
3. Phosphosilicate glass removal
The phosphorus diffusion solution sprayed on the surface of the silicon chip forms a layer of silicon dioxide containing phosphorus element on the surface of the silicon chip after high-temperature diffusion, namely phosphorus-silicon glass. Therefore, the silicon wafer after high-temperature phosphorus diffusion firstly utilizes hydrofluoric acid solution with the concentration of 5-10% to remove phosphorosilicate glass on the surface of the silicon wafer. Secondly, cleaning the silicon wafer by using a mixed solution (concentration ratio is 1:1:6) of hydrochloric acid, hydrogen peroxide and deionized water at 80 ℃ for 15min to remove residual impurities on the surface of the silicon wafer.
4. Preparation of titanium dioxide antireflection film by solution coating method
4.1 preparation of titanium dioxide precursor solution
1.64ml of a titanium tetrachloride solution was slowly dropped into 100ml of a hydrochloric acid solution (hydrochloric acid concentration: 3.6%) and strongly stirred in a cold water bath to prepare a solution A. Adding 10g of Anionic Polyacrylamide (APAM) and 15ml of isopropanol into the solution A, and uniformly mixing to obtain a solution B. And adding 1.2ml of 25% concentrated ammonia water into the solution B, and stirring for 25min to prepare the titanium dioxide precursor microemulsion.
4.2 preparation of titanium dioxide films
And atomizing the prepared titanium dioxide precursor microemulsion by using an ultrasonic transducer, and carrying the titanium dioxide precursor microemulsion to the surface of the silicon wafer with the phosphorosilicate glass removed by using nitrogen. The heating temperature of the substrate is 150-200 ℃, the nitrogen gas pressure is 1.3atm, and the atomization amount is 30-50L/min.
5. Printing electrodes and high temperature sintering
And coating silver paste on the phosphorus diffusion surface of the silicon wafer by adopting screen printing, coating aluminum paste on the non-diffusion surface, then placing the silicon wafer into a drying oven at 150 ℃ for baking for 10min, and finally placing the silicon wafer into a high-temperature furnace at 850-900 ℃ for annealing for 20 min. So far, the process of preparing the crystalline silicon solar cell by the solution method is completely finished.
6. Performance test analysis of crystalline silicon solar cell
Standard test conditions (AM1.5, 100 mW/cm)2At 25 ℃ C, the open-circuit voltage of the battery is 0.575V, and the short-circuit current density is 30.25mA/cm2The fill factor was 69.5%, and the photoelectric conversion efficiency was 12.16%. The efficiency of the crystalline silicon solar prepared by the solution method is much lower than that of a battery prepared by the current industrialized phosphorus oxychloride diffusion method, and test analysis shows that the crystalline silicon solar prepared by the solution method is mainly caused by the reasons of poor passivation performance of the front and rear surfaces, low minority carrier lifetime, high surface reflectivity and the like. However, by optimizing the process parameters, the passivation contact function of the surface of the silicon wafer is enhanced, and the surface reflection of the silicon wafer is reduced, the simple, cheap and nontoxic manufacturing process provided by the invention can realize the efficiency equivalent to that of the industrial production crystalline silicon solar cell of phosphorus oxychloride diffusion and silicon nitride deposition by a PECVD method.

Claims (1)

1. A process for preparing a crystalline silicon solar cell by a solution method is characterized in that: the method comprises the following steps:
1) taking a p-type monocrystalline silicon wafer with two unpolished sides, firstly heating the p-type monocrystalline silicon wafer in a water bath at 80 ℃ for 20min by using a 20% sodium hydroxide solution to remove a damaged layer on the surface of the silicon wafer, and after washing by using deionized water, removing an oxide layer on the surface of the silicon wafer by using a 1% hydrofluoric acid solution to form a hydrophilic surface; then, texturing the silicon wafer, wherein a texturing solution consists of aqueous solutions of 1.0 wt% of sodium hydroxide, 1.0 wt% of sodium silicate and 8 wt% of isopropanol, and the texturing temperature and time are 80 ℃ and 40 min; polishing the silicon wafer at room temperature by using a mixed solution of hydrofluoric acid, nitric acid and acetic acid with the ratio of 1:3:5, smoothing gullies at the bottom of a pyramid formed by silicon wafer texturing for 30s, and then washing the silicon wafer with deionized water;
2) cleaning the textured silicon wafer by using a mixed solution of hydrochloric acid, hydrogen peroxide and deionized water with a concentration ratio of 1:1:6, wherein the temperature is 80 ℃, and the time is 15 min; then treating with a mixed solution of ammonia water, hydrogen peroxide and deionized water with a concentration ratio of 1:1:7 at 80 ℃ for 15 min;
3) taking 350ml of 2-5% phosphoric acid solution, respectively adding 30ml of ethanol, 8ml of polyethylene glycol and 5ml of vinyl trimethoxy silane, and uniformly mixing to obtain a phosphorus diffusion solution;
4) atomizing the prepared phosphorus diffusion solution by using an ultrasonic transducer, and carrying the atomized phosphorus diffusion solution to the surface of a silicon wafer by using nitrogen for spraying; the heating temperature of the silicon wafer substrate is 50-60 ℃, the atomization amount is 10-15L/min, and the nitrogen pressure is 1.3 atm;
5) after the spraying is finished, the silicon wafer is firstly dried in a drying oven at 150 ℃ for 15min, and then is put into a high-temperature furnace under the nitrogen protection atmosphere for annealing treatment, wherein the annealing temperature is as follows: annealing at 850-900 ℃ for 15-25 min;
6) soaking the silicon wafer obtained in the previous step in 5-10% hydrofluoric acid solution to remove phosphorosilicate glass on the surface, cleaning the silicon wafer by using a mixed solution of hydrochloric acid, hydrogen peroxide and deionized water with a concentration ratio of 1:1:6, wherein the temperature is 80 ℃, and the time is 15min to remove residual impurities on the surface of the silicon wafer;
7) slowly dropping 1.64ml of titanium tetrachloride solution into 100ml of hydrochloric acid solution with the mass concentration of 3.6%, and strongly stirring in a cold water bath to prepare solution A; adding 10g of anionic polyacrylamide and 15ml of isopropanol into the solution A, and uniformly mixing to obtain a solution B; adding 1.2ml of 25% concentrated ammonia water into the solution B, and stirring for 25min to prepare titanium dioxide precursor microemulsion;
8) atomizing the prepared titanium dioxide precursor microemulsion by using an ultrasonic transducer, and carrying the atomized titanium dioxide precursor microemulsion to the surface of the silicon wafer with the phosphorosilicate glass removed by using nitrogen; the heating temperature of the silicon chip substrate is 150-200 ℃, the nitrogen gas pressure is 1.3atm, and the atomization amount is 30-50L/min;
9) and coating silver paste on the phosphorus diffusion surface of the silicon wafer by adopting screen printing, coating aluminum paste on the non-diffusion surface, then placing the silicon wafer into a drying oven at 150 ℃ for baking for 10min, and finally placing the silicon wafer into a high-temperature furnace at 850-900 ℃ for annealing for 20 min.
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