CN110416334B - 一种基于异质外延Ga2O3薄膜深紫外光电探测器的制备方法 - Google Patents
一种基于异质外延Ga2O3薄膜深紫外光电探测器的制备方法 Download PDFInfo
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Abstract
本发明公开了一种Ga2O3深紫外探测器的制备方法,主要解决现有技术反应温度高、设备工艺复杂的问题。其实现方案是:1.配制前体乙酰丙酮镓水溶液;2.清洗蓝宝石衬底;3.通过Mist‑Cvd设备,将前体乙酰丙酮镓水溶液超声雾化,并在清洗后的蓝宝石衬底上加热生长为Ga2O3薄膜;4.通过光刻工艺在生长了Ga2O3薄膜的样品上制作电极图形;5.在带有电极图形的Ga2O3薄膜上制作金属电极,完成Ga2O3深紫外探测器的制作。本发明工艺简单,易于实现,即仅需要较低的合成温度就能在短时间内获得高质量薄膜。光电测试表明,用本发明制作的深紫外光电探测器具有很高的响应度和很快的响应时间,可用于探测器的制备。
Description
技术领域
本发明属于半导体器件技术领域,具体涉及一种光电探测器的制备方法,可用于对Ga2O3薄膜的深紫外探测器制备。
背景技术
随着现代半导体光电探测技术的不断发展,紫外线尤其是200-280nm的日盲紫外在进入大气层时被臭氧层吸收,日盲紫外探测可以消除干扰的顾虑,实现高效精准的探测,太阳日盲光电探测器有越来越多的军事和民用监视应用,如导弹跟踪、安全通信、火灾探测、臭氧空洞监测、化学、生物分析和日冕探测等。Ga2O3是一种宽禁带化合物半导体材料。其禁带宽度在4.5~4.9eV之间,仅次于金刚石,对应吸收截止边位于254nm,对可见光波长没有响应,除了优异光电特性外,Ga2O3材料还具有良好的热稳定性和化学稳定性。Ga2O3薄膜在深紫外区域高度透明,其透过率能达到80%以上,具有制备深紫外透明导电薄膜的天然优势。Ga2O3材料在日盲探测器、深紫外透明导电薄膜、气敏传感器以及薄膜晶体管等多个领域都有着广泛的应用前景,因此日益成为当前氧化物半导体领域的研究热点之一。实现Ga2O3在这些领域的应用的前提是获得高质量的Ga2O3薄膜。制备Ga2O3薄膜的方法有很多,主要包括分子束外延、磁控溅射法、脉冲激光沉积法及金属有机物化学气相沉积法等。但是这些方法存在不同的缺点,其中:
分子束外延虽然可以获得高质量的Ga2O3单晶薄膜,但是设备需要高真空环境,且维护周期长、费用昂贵,生产成本高,不易于大面积薄膜的生产。
磁控溅射法靶材的利用率不高,一般低于40%,等离子体不稳定,不能实现强磁性材料的低温高速溅射且难以获得高质量单晶薄膜。
脉冲激光沉积法生长的薄膜存在表面颗粒问题,很难进行大面积薄膜的均匀沉积。
金属有机物化学气相沉积法沉积速率不太高,一般在几~几百nm/min,参加沉积的反应源和反应后的余气易燃、易爆或有毒,因此需要采取防止环境污染的措施,基体需要局部或某一个表面沉积薄膜时很困难,并且成膜时的工件温度高,因此应用上受到一定的限制。
发明内容
本发明的目的在于提出一种制作Ga2O3深紫外光电探测器的方法,以解决现有技术薄膜生长不均匀,原材料利用率低,反应温度高过程复杂难于控制,实现大面积薄膜的均匀生长。
为实现上述目的,本发明的技术方案包括如下:
(1)将乙酰丙酮镓溶于去离子水中,再加入体积比为百分之一的盐酸,制成浓度为0.02-0.8mol/L乙酰丙酮镓前体水溶液;
(2)选择C面(0001)晶向蓝宝石作为衬底,并对其进行清洗;
(3)将乙酰丙酮镓前体水溶液加入频率1.7MHz的超声雾化器中雾化为气体,并通过空气、氧气、氮气将雾化生成的气体输送到反应炉中,载气速率为0.1-8L/min,反应炉设置反应温度300℃-800℃,反应时间10min-2h,雾化气体在C面(0001)晶向蓝宝石衬底上发生分解、氧化反应,生长成50nm-2000nm厚的Ga2O3薄膜样品;
(4)通过光刻工艺在Ga2O3薄膜样品上制作出探测器插指型金属电极图形;
(5)使用电子束蒸发技术,在插指金属电极图形样品上沉积金属电极,并用丙酮浸泡沉积金属电极的样品30min,剥离掉多余金属,完成整个器件的制作。
进一步,上述步骤(2)中清洗蓝宝石衬底,是依次在丙酮液中超声浸泡10min,在乙醇液中超声浸泡10min,在去离子水中超声浸泡10min。
进一步,上述步骤(4)是先将光刻胶旋涂于Ga2O3薄膜样品上,再通过设置烘胶机100℃对Ga2O3薄膜样品加热90s;再将加热后的Ga2O3薄膜样品在光刻机下曝光5s,并在显影液浸泡40s,形成电极图形,电极图形间距为3μm或5μm或10μm。
进一步,上述步骤(5)中在插指金属电极图形样品上沉积金属电极,是采用Ti、Al、Ni、 Au金属制作出厚度为100nm的金属电极。
本发明与现有技术相比具有以下优点:
1.本发明由于采用将乙酰丙酮镓溶于去离子水中,形成均匀的前体溶液,可获得高质量的薄膜材料;
2.本发明由于采用超声雾化器在大气压下成膜,所以不需要真空装置及维持反应室处于真空的设备,使得整个Mist-CVD设备简易化,降低了生产成本;
3.本发明由于采用超声波使原料溶液雾化,可以使用多种至今为止不能被使用的原料;
4.本发明由于采用大气中的氧气和原料溶液的氧元素都作为氧元素的来源,可以使原料充分的氧化,适用于制备大面积高质量单晶薄膜。
附图说明
图1是现有Ga2O3深紫外光电探测器的结构示意图;
图2是本发明制作Ga2O3深紫外光电探测器的工艺流程图;
图3是本发明制作的Ga2O3深紫外光电探测器,分别在黑暗条件下、254nm紫外光照下、 365nm光照条件下的探测器光电响应图;
图4是本发明制作的Ga2O3深紫外光电探测器,在254nm紫外光照下的时域响应图。
具体实施方式
参照图1,现有的Ga2O3深紫外光电探测器,包括衬底、有源层及插指型金属电极,其中衬底为C面(0001)晶向蓝宝石;有源层为Ga2O3薄膜半导体层,位于衬底上;插指型金属电极,位于有源层之上。
参照图2,本发明给出制作图1所示Ga2O3深紫外光电探测器的如下三种实施例:
实施例1,在300℃生长条件下,制作厚度为50nm的Ga2O3深紫外光电探测器。
步骤1,配制前体水溶液。
取乙酰丙酮镓固体粉末0.592g,去离子水80mL,并加入盐酸0.8ml溶于去离子水中,将乙酰丙酮镓固体粉末溶于去离子水盐酸溶液中,制成浓度为0.02mol/L的乙酰丙酮镓前体水溶液。
步骤2,清洗蓝宝石衬底,如图2(a)。
选择含有C面(0001)蓝宝石作为衬底,并对其进行如下清洗:
先用丙酮液超声浸泡10min,再用乙醇液超声浸泡10min,最后用去离子水超声浸泡 10min,完成对蓝宝石衬底的清洗。
步骤3,生长Ga2O3薄膜,如图2(b)。
将乙酰丙酮镓前体水溶液加入频率1.7MHz的超声雾化器中雾化为气体,通过空气将雾化生成的气体输送到反应炉中,载气速率为0.1L/min,设置反应炉的反应温度为300℃,反应时间为10min,使雾化气体在C面(0001)晶向蓝宝石衬底上发生分解、氧化反应,生长成50nm 厚的氧化镓薄膜样品。
步骤4,光刻制作电极图形。
将光刻胶旋涂于Ga2O3薄膜样品上,再将烘胶机的温度设置为100℃对Ga2O3薄膜样品加热90s,再将加热后的Ga2O3薄膜样品在光刻机下曝光5s,并在显影液中浸泡40s,形成电极图形,电极间距为3μm。
步骤5,在Ga2O3薄膜样品上制作金属电极,完成Ga2O3深紫外光电探测器的制作,如图2 (c)。
将带有金属电极图形的Ga2O3薄膜样品置于电子束蒸发设备中,设置金属沉积速率0.1nm/s,进行金属Al电极的沉积,沉积的金属Al电极厚度为100nm;再用丙酮浸泡沉积了金属电极的样品30min,剥离掉电极图形以外多余的金属,完成整个器件的制作。
实施例2,在550℃生长条件下制作厚度为500nm的Ga2O3深紫外光电探测器。
步骤一,取乙酰丙酮镓固体粉末1.48g,去离子水80mL,并加入盐酸0.8ml溶于去离子水中,将乙酰丙酮镓固体粉末溶于去离子水盐酸溶液中,制成浓度为0.05mol/L的乙酰丙酮镓前体水溶液。
步骤二,本步骤的具体实施与实施例1的步骤2相同,如图2(a)。
步骤三,将乙酰丙酮镓前体水溶液加入频率1.7MHz的超声雾化器中雾化为气体,通过氮气将雾化生成的气体输送到反应炉中,载气速率为4L/min,反应炉设置反应温度550℃,反应时间50min,雾化气体在C面(0001)晶向蓝宝石衬底上发生分解、氧化反应,生长成500nm 厚的氧化镓薄膜样品,如图2(b)。
步骤四,将光刻胶旋涂于Ga2O3薄膜样品上,再将烘胶机的温度设置为100℃对Ga2O3薄膜样品加热90s,再将加热后的Ga2O3薄膜样品在光刻机下曝光5s,并在显影液中浸泡40s,形成电极图形,电极间距为5μm。
步骤五,将带有金属电极图形的Ga2O3薄膜样品置于电子束蒸发设备中,设置金属沉积速率0.1nm/s,进行金属Ti/Au电极的沉积,沉积的金属电极厚度Ti为20nm,Au为80nm,再用丙酮浸泡沉积了金属电极的样品30min,剥离掉电极图形以外多余的金属,完成整个器件的制作,如图2(c)。
实施例3,在800℃生长条件下制作厚度为2000nm的Ga2O3深紫外光电探测器。
步骤A,取乙酰丙酮镓固体粉末5.92g,去离子水80mL,并加入盐酸0.8ml溶于去离子水中,将乙酰丙酮镓固体粉末溶于去离子水盐酸溶液中,制成浓度为0.2mol/L的乙酰丙酮镓前体水溶液。
步骤B,清洗蓝宝石衬底:本步骤的具体实施与实施例1的步骤2相同,如图2(a)。
步骤C,将乙酰丙酮镓前体水溶液加入频率1.7MHz的超声雾化器中雾化为气体,通过氧气将雾化生成的气体输送到反应炉中,载气速率为8L/min,反应炉设置反应温度800℃,反应时间2h,雾化气体在C面(0001)晶向蓝宝石衬底上发生分解、氧化反应,生长成2000nm 厚的氧化镓薄膜样品。如图2(b)。
步骤D,将光刻胶旋涂于Ga2O3薄膜样品上,再将烘胶机的温度设置为100℃对Ga2O3薄膜样品加热90s,再将加热后的Ga2O3薄膜样品在光刻机下曝光5s,并在显影液中浸泡40s,形成电极图形,电极间距为10μm。
步骤E,将带有金属电极图形的Ga2O3薄膜样品置于电子束蒸发设备中,设置金属沉积速率0.1nm/s,进行金属Ni/Au电极的沉积,沉积的金属电极厚度Ni为20nm,Au为80nm,再用丙酮浸泡沉积了金属电极的样品30min,剥离掉电极图形以外多余的金属,完成整个器件的制作。如图2(c)。
本发明的效果可以通过以下实测数据进一步说明:
采用安捷伦B1500A半导体测试仪和紫外光三色分析仪对实施例2制成的Ga2O3深紫外探测器进行光学测试,其响应特性曲线如图3所示,时域特性曲线如图4所示。
从图3和图4可以看出,Ga2O3深紫外光电探测器表现出良好的光电响应特性。
Claims (4)
1.一种基于异质外延的单晶Ga2O3薄膜深紫外光电探测器的制备方法,包括步骤:
(1)将乙酰丙酮镓溶于去离子水中,再加入体积比为百分之一的盐酸,制成浓度为0.02-0.2mol/L乙酰丙酮镓前体水溶液;
(2)选择C面(0001)晶向蓝宝石作为衬底,并对其进行清洗;
(3)将乙酰丙酮镓前体水溶液加入频率1.7MHz的超声雾化器中雾化为气体,并通过空气、氧气、氮气将雾化生成的气体输送到反应炉中,载气速率为0.1-8L/min,反应炉设置反应温度300℃-800℃,反应时间10min-2h,雾化气体在C面(0001)晶向蓝宝石衬底上发生分解、氧化反应,生长成50nm-2000nm厚的Ga2O3薄膜样品;
(4)通过光刻工艺在Ga2O3薄膜样品上制作出探测器插指型金属电极图形;
(5)使用电子束蒸发技术,在插指金属电极图形样品上沉积金属电极,并用丙酮浸泡沉积金属电极的样品30min,剥离掉多余金属,完成整个器件的制作。
2.根据权利要求1所述的方法,其中步骤(2)中清洗蓝宝石衬底,是依次在丙酮液中超声浸泡10min,在乙醇液中超声浸泡10min,在去离子水中超声浸泡10min。
3.根据权利要求1所述的方法,其中所述步骤(4)其实现如下:
先将光刻胶旋涂于Ga2O3薄膜样品上,再通过设置烘胶机100℃对Ga2O3薄膜样品加热90s;
再将加热后的Ga2O3薄膜样品在光刻机下曝光5s,并在显影液浸泡40s,形成电极图形,电极图形间距为3μm或5μm或10μm。
4.根据权利要求1所述的方法,其中步骤(5)中在插指金属电极图形样品上沉积金属电极,是采用Ti、Al、Ni、Au金属制作出厚度为100nm的金属电极。
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Title |
---|
Solar blind deep ultraviolet β-Ga2O3 photodetectors grown on sapphire by the Mist-CVD method;YU XU 等;《 OPTICAL MATERIALS EXPRESS》;20180830;第8卷(第9期);第2941-2948页 * |
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