CN110416334A - One kind being based on hetero-epitaxy Ga2O3The preparation method of film deep ultraviolet light electric explorer - Google Patents
One kind being based on hetero-epitaxy Ga2O3The preparation method of film deep ultraviolet light electric explorer Download PDFInfo
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- CN110416334A CN110416334A CN201910634459.XA CN201910634459A CN110416334A CN 110416334 A CN110416334 A CN 110416334A CN 201910634459 A CN201910634459 A CN 201910634459A CN 110416334 A CN110416334 A CN 110416334A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 6
- 238000001534 heteroepitaxy Methods 0.000 title claims description 3
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims abstract description 76
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 28
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 16
- 239000010980 sapphire Substances 0.000 claims abstract description 16
- 239000002243 precursor Substances 0.000 claims abstract description 14
- 239000007864 aqueous solution Substances 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 17
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 16
- 239000000243 solution Substances 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 13
- 239000008367 deionised water Substances 0.000 claims description 13
- 229910021641 deionized water Inorganic materials 0.000 claims description 13
- 238000000889 atomisation Methods 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 8
- 238000002604 ultrasonography Methods 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000012159 carrier gas Substances 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 230000035484 reaction time Effects 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 41
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 239000010409 thin film Substances 0.000 abstract description 6
- 230000004044 response Effects 0.000 abstract description 4
- 238000012360 testing method Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005336 cracking Methods 0.000 abstract 1
- 230000005622 photoelectricity Effects 0.000 abstract 1
- 230000004043 responsiveness Effects 0.000 abstract 1
- 238000003786 synthesis reaction Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 239000010931 gold Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 239000003570 air Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000011953 bioanalysis Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 210000003739 neck Anatomy 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a kind of Ga2O3The preparation method of deep ultraviolet detector mainly solves the problems, such as that prior art reaction temperature is high, apparatus and process is complicated.Its implementation is: 1. prepare precursor acetylacetone,2,4-pentanedione gallium aqueous solution；2. cleaning Sapphire Substrate；3. by precursor acetylacetone,2,4-pentanedione gallium aqueous solution ultrasonic atomizatio, and in Sapphire Substrate after cleaning, heat growth is Ga by Mist-Cvd equipment2O3Film；4. grown Ga by photoetching process2O3Electrode pattern is made on the sample of film；5. in the Ga for having electrode pattern2O3Metal electrode is made on film, completes Ga2O3The production of deep ultraviolet detector.Present invention process is simple, it is easy to accomplish, i.e., only need lower synthesis temperature that can obtain high-quality thin film in a short time.Photoelectricity test shows there is very high responsiveness and cracking response time with the deep ultraviolet light electric explorer that the present invention makes, and can be used for the preparation of detector.
Description
Technical field
The invention belongs to technical field of semiconductor device, and in particular to a kind of preparation method of photodetector can be used for
To Ga2O3It is prepared by the deep ultraviolet detector of film.
Background technique
With the continuous development of modern semiconductors detecting technique, the ultraviolet light especially day of 200-280nm is blind ultraviolet
It being absorbed when entering atmosphere by ozone layer, day, blind ultraviolet detection can eliminate the misgivings of interference, and realization efficiently accurately detects,
Solar day blind photodetector has more and more military and civilian supervision applications, as guided missile tracking, secure communication, fire are visited
Survey, Ozone hole monitoring, chemistry, bioanalysis and corona detection etc..Ga2O3It is a kind of wide bandgap compound semiconductor material.Its
Forbidden bandwidth is only second to diamond between 4.5~4.9eV, and the corresponding cut-off side that absorbs is located at 254nm, does not have to visible wavelength
There is response, other than excellent photoelectric characteristic, Ga2O3Material also has good thermal stability and chemical stability.Ga2O3Film
Transparent in deep ultraviolet region height, transmitance can reach 80% or more, have and prepare the natural of deep-ultraviolet transparent conductive film
Advantage.Ga2O3Material day blind detector, deep-ultraviolet transparent conductive film, multiple necks such as gas sensor and thin film transistor (TFT)
Domain suffers from broad application prospect, therefore has become one of the research hotspot in current oxide semiconductor field.It realizes
Ga2O3It is the Ga for obtaining high quality in the premise of the application in these fields2O3Film.Prepare Ga2O3The method of film has very much, main
It to include molecular beam epitaxy, magnetron sputtering method, pulsed laser deposition and metal-organic chemical vapor deposition equipment method etc..But this
A little methods have the shortcomings that different, in which:
Although molecular beam epitaxy can obtain the Ga of high quality2O3Monocrystal thin films, but equipment needs high vacuum environment, and
Maintenance period length, somewhat expensive, high production cost are not easy to the production of large area film.
The utilization rate of magnetron sputtering method target is not high, and generally below 40%, plasma unstable can not achieve ferromagnetism
The low-temperature and high-speed of material sputters and is difficult to obtain high quality monocrystalline film.
There are surface particles in the film of pulsed laser deposition growth, be difficult to carry out the uniform heavy of large area film
Product.
Metal-organic chemical vapor deposition equipment method deposition rate is less high, generally in several~several hundred nm/min, participates in deposition
Reaction source and reaction after residual air it is inflammable, explosive or toxic, it is therefore desirable to take antipollution measure, matrix needs
Part or when some surface deposition film, are highly difficult, and workpiece temperature when forming a film is high, therefore by certain in application
Limitation.
Summary of the invention
It is an object of the invention to propose a kind of production Ga2O3The method of deep ultraviolet light electric explorer, to solve the prior art
Film growth is uneven, and utilization rate of raw materials is low, and the high process complicated difficult of reaction temperature realizes the uniform of large area film in control
Growth.
To achieve the above object, technical solution of the present invention includes the following:
(1) acetylacetone,2,4-pentanedione gallium is dissolved in deionized water, adding volume ratio is centesimal hydrochloric acid, and concentration, which is made, is
0.02-0.8mol/L acetylacetone,2,4-pentanedione gallium precursor aqueous solution；
(2) face C (0001) crystal orientation sapphire is selected to clean as substrate, and to it；
(3) acetylacetone,2,4-pentanedione gallium precursor aqueous solution is added in the ultrasonic atomizer of frequency 1.7MHz and is atomized as gas, and led to
It crosses air, oxygen, nitrogen the gas that atomization generates is transported in reacting furnace, carrier gas rate is 0.1-8L/min, and reacting furnace is set
300 DEG C -800 DEG C of reaction temperature, reaction time 10min-2h are set, atomization gas is sent out in the face C (0001) crystal orientation Sapphire Substrate
Solution estranged, oxidation reaction, grow into the Ga of 50nm-2000nm thickness2O3Film sample；
(4) by photoetching process in Ga2O3Detector finger-inserting type metal electrode figure is produced on film sample；
(5) electron beam evaporation technique is used, refers to deposit metal electrodes on metal electrode pattern specimens inserting, and soaked with acetone
The sample 30min for steeping deposit metal electrodes, peels off excess metal, completes the production of entire device.
Further, Sapphire Substrate is cleaned in above-mentioned steps (2), is that successively ultrasound impregnates 10min in acetone solution, in second
Ultrasound impregnates 10min in alcohol liquid, and ultrasound impregnates 10min in deionized water.
Further, above-mentioned steps (4) are that photoresist is first spun on Ga2O3On film sample, then pass through setting baking-glue machine
100 DEG C to Ga2O3Film sample heats 90s；Again by the Ga after heating2O3Film sample exposes 5s under litho machine, and is developing
Liquid impregnates 40s, forms electrode pattern, and electrode pattern spacing is 3 μm or 5 μm or 10 μm.
Further, in above-mentioned steps (5) insert refer to metal electrode pattern specimens on deposit metal electrodes, be using Ti, Al,
The metal electrode that Ni, Au metal are produced with a thickness of 100nm.
Compared with the prior art, the present invention has the following advantages:
1. the present invention can get due to forming uniform precursor solution using acetylacetone,2,4-pentanedione gallium to be dissolved in deionized water
The thin-film material of high quality；
2. the present invention due to being formed a film under atmospheric pressure using ultrasonic atomizer, so not needing vacuum plant and maintaining reaction
The equipment that room is in vacuum, so that entire Mist-CVD device simple, reduces production cost；
3. the present invention due to being atomized material solution using ultrasonic wave, can be used and a variety of cannot be used up to now
Raw material；
It, can be with 4. source of the present invention due to being all used as oxygen element using the oxygen element of oxygen and material solution in atmosphere
Aoxidize raw material adequately, suitable for preparing large-area high-quality monocrystal thin films.
Detailed description of the invention
Fig. 1 is existing Ga2O3The structural schematic diagram of deep ultraviolet light electric explorer；
Fig. 2 is present invention production Ga2O3The process flow chart of deep ultraviolet light electric explorer；
Fig. 3 is the Ga that the present invention makes2O3Deep ultraviolet light electric explorer, respectively under dark condition, 254nm ultraviolet lighting
Under, the detector photoelectric respone figure under 365nm illumination condition；
Fig. 4 is the Ga that the present invention makes2O3Deep ultraviolet light electric explorer, the time domain response figure under 254nm ultraviolet lighting.
Specific embodiment
Referring to Fig.1, existing Ga2O3Deep ultraviolet light electric explorer, including substrate, active layer and finger-inserting type metal electrode,
Middle substrate is the face C (0001) crystal orientation sapphire；Active layer is Ga2O3Thin film semiconductive layer is located on substrate；Finger-inserting type metal electricity
Pole is located at active layer.
Referring to Fig. 2, the present invention provides Ga shown in production Fig. 12O3Following three kinds of embodiments of deep ultraviolet light electric explorer:
Embodiment 1 makes the Ga with a thickness of 50nm under 300 DEG C of growth conditions2O3Deep ultraviolet light electric explorer.
Step 1, precursor aqueous solution is prepared.
Acetylacetone,2,4-pentanedione gallium solid powder 0.592g, deionized water 80mL are taken, and hydrochloric acid 0.8ml is added and is dissolved in deionized water
In, acetylacetone,2,4-pentanedione gallium solid powder is dissolved in deionized water hydrochloric acid solution, the acetylacetone,2,4-pentanedione gallium that concentration is 0.02mol/L is made
Precursor aqueous solution.
Step 2, Sapphire Substrate is cleaned, such as Fig. 2 (a).
It selects to contain the face C (0001) sapphire and be cleaned as follows as substrate, and to it:
10min first is impregnated with acetone solution ultrasound, then impregnates 10min with ethanol ultrasound, is finally soaked with deionized water ultrasound
10min is steeped, the cleaning to Sapphire Substrate is completed.
Step 3, Ga is grown2O3Film, such as Fig. 2 (b).
Acetylacetone,2,4-pentanedione gallium precursor aqueous solution is added in the ultrasonic atomizer of frequency 1.7MHz and is atomized as gas, air is passed through
The gas that atomization generates is transported in reacting furnace, carrier gas rate is 0.1L/min, and the reaction temperature that reacting furnace is arranged is 300
DEG C, reaction time 10min makes atomization gas decompose in the face C (0001) crystal orientation Sapphire Substrate, oxidation reaction, raw
Grow up to the gallium oxide film sample of 50nm thickness.
Step 4, photoetching making electrode pattern.
Photoresist is spun on Ga2O3On film sample, then by the temperature setting of baking-glue machine be 100 DEG C to Ga2O3Film sample
Product heat 90s, then by the Ga after heating2O3Film sample exposes 5s under litho machine, and impregnates 40s in developer solution, forms electricity
Pole figure shape, electrode spacing are 3 μm.
Step 5, in Ga2O3Metal electrode is made on film sample, completes Ga2O3The production of deep ultraviolet light electric explorer, such as
Fig. 2 (c).
The Ga of metal electrode figure will be had2O3Film sample is placed in electron beam evaporation equipment, and metal deposition rates are arranged
0.1nm/s, carries out the deposition of metal Al electrode, and the metal Al thickness of electrode of deposition is 100nm；It deposited gold with acetone soak again
The sample 30min for belonging to electrode, peels off metal extra other than electrode pattern, completes the production of entire device.
Embodiment 2 makes the Ga with a thickness of 500nm under 550 DEG C of growth conditions2O3Deep ultraviolet light electric explorer.
Step 1 takes acetylacetone,2,4-pentanedione gallium solid powder 1.48g, deionized water 80mL, and be added hydrochloric acid 0.8ml be dissolved in from
In sub- water, acetylacetone,2,4-pentanedione gallium solid powder is dissolved in deionized water hydrochloric acid solution, the levulinic that concentration is 0.05mol/L is made
Ketone gallium precursor aqueous solution.
The specific implementation of step 2, this step is identical as the step 2 of embodiment 1, such as Fig. 2 (a).
Acetylacetone,2,4-pentanedione gallium precursor aqueous solution is added in the ultrasonic atomizer of frequency 1.7MHz and is atomized as gas by step 3,
The gas that atomization generates is transported in reacting furnace by nitrogen, carrier gas rate is 4L/min, and reaction temperature 550 is arranged in reacting furnace
DEG C, reaction time 50min, atomization gas decomposes in the face C (0001) crystal orientation Sapphire Substrate, oxidation reaction, grows into
The gallium oxide film sample of 500nm thickness, such as Fig. 2 (b).
Photoresist is spun on Ga by step 42O3On film sample, then the temperature setting of baking-glue machine is right for 100 DEG C
Ga2O3Film sample heats 90s, then by the Ga after heating2O3Film sample exposes 5s under litho machine, and soaks in developer solution
40s is steeped, electrode pattern is formed, electrode spacing is 5 μm.
Step 5 will have the Ga of metal electrode figure2O3Film sample is placed in electron beam evaporation equipment, and metal is arranged
Deposition rate 0.1nm/s, carries out the deposition of metal Ti/Au electrode, and the metal electrode thickness Ti of deposition is 20nm, Au 80nm,
The sample 30min that deposited metal electrode with acetone soak again, peels off metal extra other than electrode pattern, completes entire device
The production of part, such as Fig. 2 (c).
Embodiment 3 makes the Ga with a thickness of 2000nm under 800 DEG C of growth conditions2O3Deep ultraviolet light electric explorer.
Step A takes acetylacetone,2,4-pentanedione gallium solid powder 5.92g, deionized water 80mL, and be added hydrochloric acid 0.8ml be dissolved in from
In sub- water, acetylacetone,2,4-pentanedione gallium solid powder is dissolved in deionized water hydrochloric acid solution, the levulinic that concentration is 0.2mol/L is made
Ketone gallium precursor aqueous solution.
Step B, clean Sapphire Substrate: the specific implementation of this step is identical as the step 2 of embodiment 1, such as Fig. 2 (a).
Acetylacetone,2,4-pentanedione gallium precursor aqueous solution is added in the ultrasonic atomizer of frequency 1.7MHz and be atomized as gas by step C, logical
It crosses oxygen the gas that atomization generates is transported in reacting furnace, carrier gas rate is 8L/min, and reaction temperature 800 is arranged in reacting furnace
DEG C, reaction time 2h, atomization gas decomposes in the face C (0001) crystal orientation Sapphire Substrate, oxidation reaction, grows into
The gallium oxide film sample of 2000nm thickness.Such as Fig. 2 (b).
Photoresist is spun on Ga by step D2O3On film sample, then by the temperature setting of baking-glue machine be 100 DEG C to Ga2O3
Film sample heats 90s, then by the Ga after heating2O3Film sample exposes 5s under litho machine, and impregnates 40s in developer solution,
Electrode pattern is formed, electrode spacing is 10 μm.
Step E will have the Ga of metal electrode figure2O3Film sample is placed in electron beam evaporation equipment, and setting metal is heavy
Product rate 0.1nm/s, carries out W metal/Au electrode deposition, and the metal electrode thickness Ni of deposition is 20nm, Au 80nm, then
The sample 30min that deposited metal electrode with acetone soak, peels off metal extra other than electrode pattern, completes entire device
Production.Such as Fig. 2 (c).
Effect of the invention can be further illustrated by following measured data:
Using Agilent B1500A semi-conductor test instrument and ultraviolet light trichromatic analysis instrument to Ga made of embodiment 22O3It is dark purple
External detector carries out optic test, and resonse characteristic is as shown in figure 3, time domain specification curve is as shown in Figure 4.
From figs. 3 and 4 it can be seen that Ga2O3Deep ultraviolet light electric explorer shows good photoelectric response characteristic.
Claims (4)
1. one kind is based on hetero-epitaxy Ga2O3The preparation method of film deep ultraviolet light electric explorer, comprising:
(1) acetylacetone,2,4-pentanedione gallium is dissolved in deionized water, adding volume ratio is centesimal hydrochloric acid, and concentration, which is made, is
0.02-0.2mol/L acetylacetone,2,4-pentanedione gallium precursor aqueous solution；
(2) face C (0001) crystal orientation sapphire is selected to clean as substrate, and to it；
(3) acetylacetone,2,4-pentanedione gallium precursor aqueous solution is added in the ultrasonic atomizer of frequency 1.7MHz and is atomized as gas, and pass through sky
The gas that atomization generates is transported in reacting furnace by gas, oxygen, nitrogen, and carrier gas rate is 0.1-8L/min, and reacting furnace setting is anti-
300 DEG C -800 DEG C of temperature, reaction time 10min-2h are answered, atomization gas occurs to divide in the face C (0001) crystal orientation Sapphire Substrate
Solution, oxidation reaction, grow into the Ga of 50nm-2000nm thickness2O3Film sample；
(4) by photoetching process in Ga2O3Detector finger-inserting type metal electrode figure is produced on film sample；
(5) electron beam evaporation technique is used, refers to deposit metal electrodes on metal electrode pattern specimens inserting, and heavy with acetone soak
The sample 30min of product metal electrode, peels off excess metal, completes the production of entire device.
2. being successively to surpass in acetone solution according to the method described in claim 1, wherein cleaning Sapphire Substrate in step (2)
Sound impregnates 10min, and ultrasound impregnates 10min in ethanol, and ultrasound impregnates 10min in deionized water.
3. according to the method described in claim 1, wherein the step (4) its be accomplished by
Photoresist is first spun on Ga2O3On film sample, then by 100 DEG C of baking-glue machine of setting to Ga2O3Film sample heating
90s；
Again by the Ga after heating2O3Film sample exposes 5s under litho machine, and impregnates 40s in developer solution, forms electrode pattern,
Electrode pattern spacing is 3 μm or 5 μm or 10 μm.
4. according to the method described in claim 1, wherein deposited metal is electric on inserting finger metal electrode pattern specimens in step (5)
Pole is the metal electrode produced using Ti, Al, Ni, Au metal with a thickness of 100nm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811006933 | 2018-08-31 | ||
| CN2018110069336 | 2018-08-31 |
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| CN110416334A true CN110416334A (en) | 2019-11-05 |
| CN110416334B CN110416334B (en) | 2021-10-29 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854233A (en) * | 2019-11-17 | 2020-02-28 | 金华紫芯科技有限公司 | Ga2O3Film-based solar blind ultraviolet detector, preparation method and application |
| CN111029435A (en) * | 2019-12-11 | 2020-04-17 | 中国科学院长春光学精密机械与物理研究所 | ZnGaO ultraviolet detector and preparation method thereof |
| CN111293181A (en) * | 2020-02-18 | 2020-06-16 | 湖北大学 | MSM type α -Ga2O3Basic solar blind ultraviolet detector |
| CN113088925A (en) * | 2021-03-12 | 2021-07-09 | 江苏师范大学 | Preparation of ZnS doped alpha-Ga by Mist-CVD chemical vapor deposition method2O3Method for making thin film |
| CN113130704A (en) * | 2021-04-07 | 2021-07-16 | 安徽大学 | Based on CrPS4Method for preparing polarization sensitive photoelectric detector |
| CN113969423A (en) * | 2021-10-26 | 2022-01-25 | 西安电子科技大学 | Preparation method of transferable large-size gallium oxide film |
| CN114141909A (en) * | 2021-11-26 | 2022-03-04 | 北京铭镓半导体有限公司 | Method for growing gallium oxide films with different crystal orientations on sapphire substrate and preparation method of ultraviolet light detector based on films |
| CN114566562A (en) * | 2022-03-09 | 2022-05-31 | 浙江理工大学 | Anti-irradiation gallium oxide ultraviolet detector and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014234344A (en) * | 2013-10-10 | 2014-12-15 | 株式会社Flosfia | Production method for oxide crystal thin film |
| CN107946176A (en) * | 2017-11-17 | 2018-04-20 | 西安电子科技大学 | Ga2O3The preparation method of thin film transistor (TFT) |
-
2019
- 2019-07-13 CN CN201910634459.XA patent/CN110416334B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014234344A (en) * | 2013-10-10 | 2014-12-15 | 株式会社Flosfia | Production method for oxide crystal thin film |
| CN107946176A (en) * | 2017-11-17 | 2018-04-20 | 西安电子科技大学 | Ga2O3The preparation method of thin film transistor (TFT) |
Non-Patent Citations (1)
| Title |
|---|
| YU XU 等: "Solar blind deep ultraviolet β-Ga2O3 photodetectors grown on sapphire by the Mist-CVD method", 《 OPTICAL MATERIALS EXPRESS》 * |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110854233A (en) * | 2019-11-17 | 2020-02-28 | 金华紫芯科技有限公司 | Ga2O3Film-based solar blind ultraviolet detector, preparation method and application |
| CN110854233B (en) * | 2019-11-17 | 2021-09-07 | 金华紫芯科技有限公司 | Ga2O3Film-based solar blind ultraviolet detector, preparation method and application |
| CN111029435A (en) * | 2019-12-11 | 2020-04-17 | 中国科学院长春光学精密机械与物理研究所 | ZnGaO ultraviolet detector and preparation method thereof |
| CN111293181A (en) * | 2020-02-18 | 2020-06-16 | 湖北大学 | MSM type α -Ga2O3Basic solar blind ultraviolet detector |
| CN111293181B (en) * | 2020-02-18 | 2021-09-03 | 湖北大学 | MSM type alpha-Ga2O3Basic solar blind ultraviolet detector |
| CN113088925A (en) * | 2021-03-12 | 2021-07-09 | 江苏师范大学 | Preparation of ZnS doped alpha-Ga by Mist-CVD chemical vapor deposition method2O3Method for making thin film |
| CN113088925B (en) * | 2021-03-12 | 2022-03-25 | 江苏师范大学 | Preparation of ZnS doped alpha-Ga by Mist-CVD chemical vapor deposition method2O3Method for making thin film |
| CN113130704A (en) * | 2021-04-07 | 2021-07-16 | 安徽大学 | Based on CrPS4Method for preparing polarization sensitive photoelectric detector |
| CN113969423A (en) * | 2021-10-26 | 2022-01-25 | 西安电子科技大学 | Preparation method of transferable large-size gallium oxide film |
| CN114141909A (en) * | 2021-11-26 | 2022-03-04 | 北京铭镓半导体有限公司 | Method for growing gallium oxide films with different crystal orientations on sapphire substrate and preparation method of ultraviolet light detector based on films |
| CN114141909B (en) * | 2021-11-26 | 2023-09-29 | 北京铭镓半导体有限公司 | Method for growing gallium oxide films with different crystal orientations on sapphire substrate and preparation method of ultraviolet light detector based on film |
| CN114566562A (en) * | 2022-03-09 | 2022-05-31 | 浙江理工大学 | Anti-irradiation gallium oxide ultraviolet detector and preparation method thereof |
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