CN110413224A - Data storage method and device and memory - Google Patents
Data storage method and device and memory Download PDFInfo
- Publication number
- CN110413224A CN110413224A CN201910563601.6A CN201910563601A CN110413224A CN 110413224 A CN110413224 A CN 110413224A CN 201910563601 A CN201910563601 A CN 201910563601A CN 110413224 A CN110413224 A CN 110413224A
- Authority
- CN
- China
- Prior art keywords
- memory block
- memory
- slc
- tlc
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0614—Improving the reliability of storage systems
- G06F3/0616—Improving the reliability of storage systems in relation to life time, e.g. increasing Mean Time Between Failures [MTBF]
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0638—Organizing or formatting or addressing of data
- G06F3/064—Management of blocks
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0638—Organizing or formatting or addressing of data
- G06F3/0644—Management of space entities, e.g. partitions, extents, pools
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0646—Horizontal data movement in storage systems, i.e. moving data in between storage devices or systems
- G06F3/0647—Migration mechanisms
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Abstract
The invention discloses a data storage method, which comprises the following steps: dividing all storage blocks of a memory into SLC storage areas, and writing data in the SLC storage areas; counting the erasing times of each storage block, and determining a reference threshold value for switching the storage mode; and converting the memory block with the erasing times larger than the reference threshold value into a TLC memory area. Meanwhile, the invention also provides a data storage device and a memory. Based on the data storage method, the service life can be ensured while high-efficiency reading and writing of data is ensured.
Description
Technical field
The present invention relates to flash memory technology fields, and in particular to a kind of date storage method, device and memory.
Background technique
Flash memory forms in blocks, includes several pages, every page of data that can store several bytes in each piece.It is right
For the flash memory of TLC type, each individual piece can be appointed as SLC mode or TLC mode, then to therein
Page carries out erasable read operation.When block is with SLC mode operation, there is read or write speed fast, stable storage and with long service life
Advantage, but the storage number of pages of this block can tail off, and cause actual not up to standard using capacity；When a block is with TLC mode operation
When, data cannot be directly written into TLC, it is necessary to after first writing data into SLC, then moved to TLC, therefore for
For TLC, although its reading rate is consistent with SLC, more operating procedures make writing rate ratio SLC mode slow, and its
Service life is shorter, but the number of pages of the storing data of flash memory will increase dramatically under TLC mode, is three times under SLC mode.
FTL is the algorithm for being used in one of storage product and logical address being mapped to physical address, such as traditional
FTL, first by the page under data copy to SLC mode, then passes through GC for SLC mould when operating 3D TLC NandFlash
The data stored under formula are transferred to the page under TLC mode, and the storage logic of this Data Migration mode is relatively fixed, but does not tie
The actual conditions for closing product carry out dynamic adjustment, so will appear two kinds of extreme situations in actual use: storage performance is good,
But hard disk service life is short；Or storage performance is poor, but hard disk long service life.
Summary of the invention
The main object of the present invention is to propose a kind of date storage method, it is intended to solve existing memory FTL manager
The problem of method cannot be according to the service condition dynamic regulation memory module of product.
To achieve the above object, the present invention proposes a kind of date storage method, comprising:
The memory block of memory is all divided into the memory block SLC, and data are written by the memory block SLC；
The erasable number of each memory block is counted, and determines the reference threshold of memory module switching；
The memory block that erasable number is greater than the reference threshold is converted into the memory block TLC.
Preferably, the date storage method further include:
According to the data volume that the memory block SLC is written, part of storage block is converted into TLC storage in the memory block SLC
Area；
By the Data Migration of the memory block SLC to the memory block TLC during read-write operation is idle.
Preferably, described part of storage block is converted into the memory block TLC in the memory block SLC to include:
The erasable number for counting each memory block in the memory block SLC, according to the descending sequence of erasable number from institute
Selected section memory block in the memory block SLC is stated, and is converted to the memory block TLC.
Preferably, the reference threshold of the determining memory module switching includes:
It may be programmed erasable cycle-index P and life ensuring coefficient C according to product type determination；
Determine guarantee service life T1 and life expectancy T2 of product；
Pass through formulaCalculate reference threshold.
In addition, the present invention also proposes a kind of data storage device, comprising:
First memory block division module, for the memory block of memory to be all divided into the memory block SLC；
Data write. module, for data to be written by the memory block SLC；
Statistical module, for counting the erasable number of each memory block；
Threshold determination module, for determining the reference threshold of memory module switching；
Conversion module, the memory block for erasable number to be greater than the reference threshold are converted to the memory block TLC.
Preferably, the data storage device further include:
Second memory block division module, the data volume for being written according to the memory block SLC will in the memory block SLC
Part of storage block is converted to the memory block TLC；
Data Migration module, for during read-write operation is idle by the Data Migration of the memory block SLC to the memory block TLC.
Preferably, second memory block division module includes:
Statistic unit, for counting the erasable number of each memory block in the memory block SLC；
Division unit, for selected section to store from the memory block SLC according to the descending sequence of erasable number
Block, and be converted to the memory block TLC.
Preferably, the threshold determination module includes:
Parameter determination unit, for may be programmed erasable cycle-index P and life ensuring coefficient according to product type determination
C；
Service life determination unit, for determining guarantee service life T1 and life expectancy T2 of product；
Threshold computation unit, for passing through formulaCalculate reference threshold.
In addition, the present invention also proposes a kind of memory, including controller and memory block, the controller is used for:
The memory block of memory is all divided into the memory block SLC, and data are written by the memory block SLC；
The erasable number of each memory block is counted, and according to the reference threshold for determining memory module switching；
The memory block that erasable number is greater than the reference threshold is converted into the memory block TLC.
Preferably, the controller is also used to:
According to the data volume that the memory block SLC is written, part of storage block is converted into TLC storage in the memory block SLC
Area；
By the Data Migration of the memory block SLC to the memory block TLC during read-write operation is idle.
Date storage method provided by the present invention, memory are all SLC mode at the beginning, and during use,
The memory block that erasable number is greater than reference threshold is converted to TLC storage by the erasable number for counting each memory block in SLC area
Area, until most of memory block switchs to the memory block TLC in memory.Early period is being used, the memory block SLC occupies the majority, reading and writing data
Speed is fast, guarantees the superior function of product；Phase after use, the memory block TLC occupy the majority, read or write speed decline, but extend production
The service life of product guarantees that the use of product is stablized.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of one embodiment of memory of the invention；
Fig. 2 is the flow diagram of one embodiment of date storage method of the invention；
Fig. 3 is the flow diagram of another embodiment of date storage method of the invention；
Fig. 4 is the schematic diagram of Data Migration in one embodiment of memory of the invention；
Fig. 5 is the functional block diagram of one embodiment of data storage device of the invention.
Specific embodiment
The embodiment of the present invention is described more fully below, the example of embodiment is shown in the accompanying drawings, wherein phase from beginning to end
Identical element or element with the same function are indicated with label.Embodiment below with reference to attached drawing description is exemplary
, it is intended to it is used to explain the present invention, and is not considered as limiting the invention, based on the embodiments of the present invention, this field
Those of ordinary skill's every other embodiment obtained without making creative work, belongs to protection of the present invention
Range.
In order to solve the above technical problems, the present invention proposes a kind of date storage method, realized using this method to memory
Management, can guarantee high efficiency read-write data while guarantee service life.Memory is all SLC mode at the beginning,
And erasable number is greater than the memory block of reference threshold by the erasable number for during use, counting each memory block in SLC area
The memory block TLC is converted to, until most of memory block switchs to the memory block TLC in memory.Therefore, by the erasable number of memory block
As the condition for judging memory module conversion, balance can be obtained between performance and used life.Meanwhile it also providing realization and being somebody's turn to do
Date storage method realizes the hardware foundation of process, i.e. the present invention also proposes a kind of memory, and the type of the memory can be
EMMC (Embedded Multi Media Card), this embedded storage solution is more applicable for portable mobile product,
Such as mobile phone, tablet computer etc.；In addition, the type of the memory can also be solid state hard disk.Regardless of which kind of class memory uses
The construction of type is suitable for date storage method proposed by the present invention, achievees the purpose that efficiently to manage storaging medium.
Referring to Fig. 1, in one embodiment, memory 20 includes controller 21 and storage region 22, and flash memory is all to be with block
Unit composition, therefore storage region 22 is substantially to be made of several memory blocks, each memory block includes several pages, often
One page can store the data of several bytes.The memory 20 of the embodiment of the present invention is the flash memory of TLC type, each individual
Memory block can be appointed as SLC mode or the reading and writing of TLC mode and erasing data.Controller 21 is configured with to storage region 22
It is managed, realizes data from external write-in and the control program read from inside, i.e. FTL management program.For example, in response to
Data are temporarily stored into controller 21 by the write request from electronic equipment 10 first, under the control of FTL, for the number of write-in
According to distribution storage address, position corresponding with the storage address in storage region 22 is then write data into.For another example, it responds
In the read requests from electronic equipment 10, under the control of FTL, controller 21 is read data to from storage region 22, then
The data in controller 21 are transferred to electronic equipment 10 again.
So far, the application environment of each embodiment of the present invention and the hardware configuration and function of relevant device have been described in detail
Energy.In the following, above-mentioned application environment and relevant device will be based on, each embodiment of the invention is proposed.
Referring to fig. 2, the present invention provides a kind of date storage method comprising:
The memory block of memory is all divided into the memory block SLC, and data is written by the memory block SLC by step S10.
Specifically, at the beginning of use, the memory block of memory 20 is all divided into the memory block SLC, and such benefit is to deposit
Reservoir 20 has most fast read or write speed when reading and writing data.At this point, the read-write of all data is completed in the memory block SLC.
Here when generally referring to memory 20 " at the beginning of use " and be delivered for use, for example its memory block is complete when leaving the factory for memory 20
Portion is divided into the memory block SLC.
Step S20 counts the erasable number of each memory block, and determines the reference threshold of memory module switching.
In this step, in order to realize the control to 20 service life of memory, respectively depositing to memory 20 at the very start
The erasable number of storage block is counted.For flash memory, the memory capacity under TLC mode is three times under SLC mode, such as one
Part data need to store using 3 SLC blocks, and the number of pages of TLC block is three times of SLC block, therefore the data of 3 SLC blocks are rigid
It can be received by 1 TLC block well.For an independent block, if keeping certain data volume, erasable number in slc mode can
Can service life be reduced, and deposit if flash memory persistently keeps SLC mode to use with three times be considered under TLC mode
Storage capacity also will receive limitation.In view of this, in the present embodiment, it is also necessary to determine the reference threshold of memory module switching, it should
Reference threshold represents flash memory collateral security service performance to the transformation node for guaranteeing service life.In a preferred embodiment, join
Examine the calculating process of threshold value specifically:
A: erasable cycle-index P and life ensuring coefficient C may be programmed according to product type determination；
B: guarantee service life T1 and life expectancy T2 of product are determined；
C: pass through formulaCalculate reference threshold.
In above-mentioned steps, per a flash memory products there is it specifically may be programmed erasable cycle-index (P/E), such as with depth
For the solid state hard disk of the dimension storage of ditch between fields one hundred Science and Technology Co., Ltd. design production, may be programmed erasable cycle-index is 3000, together
When, in order to guarantee the stability of service life, choosing life assurance coefficient is 90%, and with guarantee service life for 3 years, in advance
Service life phase is 2 years.By the parameter value assumed at this, reference threshold can be calculatedIn other embodiments, it is contemplated that the difference of flash memory products, it can be according to reality
Situation selects parameter value involved in above-mentioned steps.It should be noted that above-mentioned P, T1 and T2 are dimensionless positive integer, and C
For the percentage greater than 0 and less than 100.
The memory block that erasable number is greater than reference threshold is converted to the memory block TLC by step S30.
It is counted by the erasable number to memory block, it can be estimated that the service life of memory block, to guarantee memory
20 excellent performance.As the erasable number of memory block is continuously increased, if being always maintained at the use of SLC mode, will accelerate to store
Block approaches the speed of service life, to be unfavorable for being kept for overall performance and the service life of memory 20.For some erasable numbers
Greater than the memory block of reference threshold, it is converted into the memory block TLC, for example the statistics of erasable number is to complete primary erasable behaviour
As when carry out, it is therefore to be understood that the memory block remains empty state, tool after the data in memory block are wiped free of
For the condition of conversion memory module, storage region 22 contains the memory block SLC and the memory block TLC, initialization phase, SLC at this time
The quantity of memory block possessed by memory block be also much larger than with the memory block TLC, therefore the readwrite performance of data will not be caused
It influences, meanwhile, because the memory block of part SLC mode is converted to the memory block of TLC mode, considerably increase memory 20
Memory capacity, adapted to memory 20 long-time service requirement.Later period, the storage of the memory block SLC are used in memory 20
Number of blocks gradually decreases, until most of memory block is converted to the memory block TLC.
Further, referring to fig. 4, by carrying out mode conversion to the part of storage block in storage region 22, so that storage
Region 22 includes the memory block SLC 221 and the memory block TLC 222, as an example, the quantity of memory block shared by the memory block SLC 221 is big
In the memory block TLC 222.After memory module conversion, in order to guarantee the storage performance of memory 20, SLC can be stored
On the Data Migration saved in area 221 to the memory block TLC 222, the operation of Data Migration be can choose when memory 20 is idle
Between carry out, when specifically controller 21 is idle, i.e., no user data read-write operation when.It is all written to since data being written every time
In the memory block SLC 221, so writing speed has very big promotion.
Referring to Fig. 3 and Fig. 4, in another embodiment of the invention, the date storage method further include:
Part of storage block is converted to TLC in the memory block SLC according to the data volume that the memory block SLC is written by step S40
Memory block.
In the present embodiment, it is contemplated that the quantity of the included memory block in the memory block SLC 221 and the memory block TLC 222 exist compared with
Big difference, it is understood that there may be the current memory block SLC 221 is not enough to continue the case where write-in data.Therefore, in addition to above-described embodiment
In using reference threshold and erasable number as the standard for judging memory module switching, the present embodiment is write also according to the memory block SLC 221
The quantity of memory block in the memory block SLC 221 is adjusted flexibly in the data volume entered, turns part of storage block in the memory block SLC 221
It is changed to the memory block TLC 222, to adapt to the write-in requirement of big data quantity.
Also, in a kind of possible preferred embodiment, the erasable number of each memory block in the memory block SLC 221 is counted,
According to the descending sequence of erasable number from the memory block SLC 221 selected section memory block, and be converted to the memory block TLC
222.It here, is the reference converted using erasable number as mode, the memory block for preferentially selecting erasable number big is as conversion pair
As, it is possible to reduce the erasable number in subsequent use process is put down so that the service life of each memory block is realized in a certain range
Weighing apparatus.
Step S50, by the Data Migration of the memory block SLC to the memory block TLC during read-write operation is idle.
In the present embodiment, similar with the data migration process of above-mentioned elaboration, the operation of Data Migration can choose
20 free time of memory carries out, when specifically controller 21 is idle, i.e., no user data read-write operation when.Due to being written every time
Data are all written in the memory block SLC 221, so writing speed has very big promotion.
In addition, referring to Fig. 5, which includes: the present invention also provides a kind of data storage device
First memory block division module 31, for the memory block of memory to be all divided into the memory block SLC；
Data write. module 32, for data to be written by the memory block SLC；
Statistical module 33, for counting the erasable number of each memory block；
Threshold determination module 34, for determining the reference threshold of memory module switching；
Conversion module 35, the memory block for erasable number to be greater than reference threshold are converted to the memory block TLC.
Specifically, at the beginning of use, the first memory block division module 31 is used to all divide the memory block of memory 20
For the memory block SLC, such benefit is that memory 20 has most fast read or write speed when reading and writing data.At this point, all numbers
According to read-write be the memory block SLC complete.Here when generally referring to memory 20 " at the beginning of use " and be delivered for use, than
As its memory block is all divided into the memory block SLC to memory 20 when leaving the factory.
In order to realize the control to 20 service life of memory, by statistical module 33 at the very start to each of memory 20
The erasable number of memory block is counted.For flash memory, the memory capacity under TLC mode is three times under SLC mode, such as
A data need to store using 3 SLC blocks, and the number of pages of TLC block is three times of SLC block, therefore the data of 3 SLC blocks
It can just be received by 1 TLC block.For an independent block, if keeping certain data volume, erasable number in slc mode
It may be considered three times under TLC mode, if flash memory persistently keeps SLC mode to use, can service life be reduced, and
Memory capacity also will receive limitation.In view of this, in the present embodiment, it is also necessary to determine the reference threshold of memory module switching,
The reference threshold represents flash memory collateral security service performance to the transformation node for guaranteeing service life.In a preferred embodiment,
Threshold determination module 34 includes:
Parameter determination unit, for may be programmed erasable cycle-index P and life ensuring coefficient according to product type determination
C；
Service life determination unit, for determining guarantee service life T1 and life expectancy T2 of product；
Threshold computation unit, for passing through formulaCalculate reference threshold.
Per a flash memory products there is it specifically may be programmed erasable cycle-index (P/E), for example is tieed up and stored with Shenzhen one hundred
For the solid state hard disk of Science and Technology Co., Ltd.'s design production, may be programmed erasable cycle-index is 3000, meanwhile, in order to guarantee
The stability of service life, choosing life assurance coefficient are 90%, and to guarantee service life for 3 years, it is contemplated that service life
It is 2 years.By the parameter value assumed at this, reference threshold can be calculatedIn
In other embodiments, it is contemplated that the difference of flash memory products can select ginseng involved in above-mentioned calculating process according to the actual situation
Numerical value.
It is counted by erasable number of the statistical module 33 to memory block, it can be estimated that the service life of memory block, with
Guarantee the excellent performance of memory 20.As the erasable number of memory block is continuously increased, if being always maintained at the use of SLC mode,
It will accelerate memory block and approach the speed of service life, to be unfavorable for being kept for overall performance and the service life of memory 20.For one
A little erasable numbers are greater than the memory block of reference threshold, and conversion module 35 is converted into the memory block TLC, and storage region 22 is wrapped at this time
The memory block SLC and the memory block TLC are contained, the quantity of initialization phase, memory block possessed by the memory block SLC is also much larger than and TLC
Memory block, therefore the readwrite performance of data will not be impacted, meanwhile, because the memory block of part SLC mode is converted to
The memory block of TLC mode has adapted to wanting for the long-time service of memory 20 so considerably increasing the memory capacity of memory 20
It asks.
In addition, the data storage device 30 further include:
Second memory block division module, the data volume for being written according to the memory block SLC, by part in the memory block SLC
Memory block is converted to the memory block TLC；
Specifically, the second memory block division module includes:
Statistic unit, for counting the erasable number of each memory block in the memory block SLC；
Division unit, for according to the descending sequence of erasable number from the memory block SLC selected section memory block, and
Be converted to the memory block TLC.
Data Migration module, for during read-write operation is idle by the Data Migration of the memory block SLC to the memory block TLC.
The working principle and play that each functional module is played the role of in all embodiments of above data storage device 30
It can be found in the realization process of above-mentioned each embodiment of date storage method, therefore not to repeat here.
To sum up, memory is all SLC mode at the beginning, and during use, counts each memory block in SLC area
The memory block that erasable number is greater than reference threshold is converted to the memory block TLC by erasable number, until largely storing in memory
Block switchs to the memory block TLC.Early period is being used, the memory block SLC occupies the majority, and reading and writing data speed is fast, guarantees the superior function of product；
Phase after use, the memory block TLC occupy the majority, read or write speed decline, but extend the service life of product, guarantee the use of product
Stablize.
Those of ordinary skill in the art may be aware that list described in conjunction with the examples disclosed in the embodiments of the present disclosure
Member and algorithm steps can be realized with the combination of electronic hardware or computer software and electronic hardware.These functions are actually
It is implemented in hardware or software, the specific application and design constraint depending on technical solution.Professional technician
Each specific application can be used different methods to achieve the described function, but this realization is it is not considered that exceed
The scope of the present invention.
Above is only part or preferred embodiment of the invention, therefore either text or attached drawing cannot all limit this
The range of protection is invented to be made under all designs with an entirety of the invention using description of the invention and accompanying drawing content
Equivalent structure transformation, or directly/be used in other related technical areas indirectly and be included in the scope of protection of the invention.
Claims (10)
1. a kind of date storage method characterized by comprising
The memory block of memory is all divided into the memory block SLC, and data are written by the memory block SLC；
The erasable number of each memory block is counted, and determines the reference threshold of memory module switching；
The memory block that erasable number is greater than the reference threshold is converted into the memory block TLC.
2. date storage method according to claim 1, which is characterized in that further include:
According to the data volume that the memory block SLC is written, part of storage block is converted into the memory block TLC in the memory block SLC；
By the Data Migration of the memory block SLC to the memory block TLC during read-write operation is idle.
3. date storage method according to claim 2, which is characterized in that it is described in the memory block SLC by part
Memory block is converted to the memory block TLC
The erasable number for counting each memory block in the memory block SLC, according to the descending sequence of erasable number from the SLC
Selected section memory block in memory block, and be converted to the memory block TLC.
4. date storage method according to claim 1, which is characterized in that the reference threshold of the determining memory module switching
Value includes:
It may be programmed erasable cycle-index P and life ensuring coefficient C according to product type determination；
Determine guarantee service life T1 and life expectancy T2 of product；
Pass through formulaCalculate reference threshold.
5. a kind of data storage device characterized by comprising
First memory block division module, for the memory block of memory to be all divided into the memory block SLC；
Data write. module, for data to be written by the memory block SLC；
Statistical module, for counting the erasable number of each memory block；
Threshold determination module, for determining the reference threshold of memory module switching；
Conversion module, the memory block for erasable number to be greater than the reference threshold are converted to the memory block TLC.
6. data storage device according to claim 5, which is characterized in that further include:
Second memory block division module, the data volume for being written according to the memory block SLC, by part in the memory block SLC
Memory block is converted to the memory block TLC；
Data Migration module, for during read-write operation is idle by the Data Migration of the memory block SLC to the memory block TLC.
7. data storage device according to claim 6, which is characterized in that second memory block division module includes:
Statistic unit, for counting the erasable number of each memory block in the memory block SLC；
Division unit, for according to the descending sequence of erasable number from the memory block SLC selected section memory block, and
Be converted to the memory block TLC.
8. data storage device according to claim 5, which is characterized in that the threshold determination module includes:
Parameter determination unit, for may be programmed erasable cycle-index P and life ensuring coefficient C according to product type determination；
Service life determination unit, for determining guarantee service life T1 and life expectancy T2 of product；
Threshold computation unit, for passing through formulaCalculate reference threshold.
9. a kind of memory, including controller and memory block, which is characterized in that the controller is used for:
The memory block of memory is all divided into the memory block SLC, and data are written by the memory block SLC；
The erasable number of each memory block is counted, and according to the reference threshold for determining memory module switching；
The memory block that erasable number is greater than the reference threshold is converted into the memory block TLC.
10. memory according to claim 9, which is characterized in that the controller is also used to:
According to the data volume that the memory block SLC is written, part of storage block is converted into the memory block TLC in the memory block SLC；
By the Data Migration of the memory block SLC to the memory block TLC during read-write operation is idle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910563601.6A CN110413224A (en) | 2019-06-26 | 2019-06-26 | Data storage method and device and memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910563601.6A CN110413224A (en) | 2019-06-26 | 2019-06-26 | Data storage method and device and memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110413224A true CN110413224A (en) | 2019-11-05 |
Family
ID=68359892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910563601.6A Pending CN110413224A (en) | 2019-06-26 | 2019-06-26 | Data storage method and device and memory |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110413224A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110968524A (en) * | 2019-12-09 | 2020-04-07 | Oppo广东移动通信有限公司 | Data storage control method, device, storage medium and electronic device |
| CN111159058A (en) * | 2019-12-27 | 2020-05-15 | 深圳大普微电子科技有限公司 | Wear leveling method and device and nonvolatile storage equipment |
| CN113392036A (en) * | 2020-03-11 | 2021-09-14 | 深圳星火半导体科技有限公司 | Solid-state memory and data writing method and device thereof |
| WO2023035120A1 (en) * | 2021-09-07 | 2023-03-16 | 华为技术有限公司 | Method and apparatus for managing data |
| CN115909544A (en) * | 2022-12-13 | 2023-04-04 | 江苏都万电子科技有限公司 | Memory and storage method |
| CN116884464A (en) * | 2023-09-06 | 2023-10-13 | 上海芯存天下电子科技有限公司 | flash chip erasing method and device and flash chip |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004110436A (en) * | 2002-09-18 | 2004-04-08 | Koatsu Gas Kogyo Co Ltd | Read/write control circuit for memory, non-contact memory card, read/write device, and read/write system for non-contact memory card |
| CN102591593A (en) * | 2011-12-28 | 2012-07-18 | 华为技术有限公司 | Method for switching hybrid storage modes, device and system |
| CN103116550A (en) * | 2013-01-11 | 2013-05-22 | 深圳市硅格半导体有限公司 | Method and device for switching physical block work mode in flash memory |
| CN106843762A (en) * | 2017-01-17 | 2017-06-13 | 北京联想核芯科技有限公司 | The method and solid state hard disc of managing storage area |
| CN107291626A (en) * | 2017-06-19 | 2017-10-24 | 北京小米移动软件有限公司 | Date storage method and device |
| CN107357534A (en) * | 2017-07-18 | 2017-11-17 | 深圳市德名利电子有限公司 | A kind of dynamic switching method and system of flash block pattern |
| CN108255419A (en) * | 2017-12-19 | 2018-07-06 | 深圳忆联信息***有限公司 | A kind of abrasion equilibrium method and SSD for TLC types SSD |
| US20190103163A1 (en) * | 2017-09-29 | 2019-04-04 | Phison Electronics Corp. | Memory management method, memory control circuit unit and memory storage device |
-
2019
- 2019-06-26 CN CN201910563601.6A patent/CN110413224A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004110436A (en) * | 2002-09-18 | 2004-04-08 | Koatsu Gas Kogyo Co Ltd | Read/write control circuit for memory, non-contact memory card, read/write device, and read/write system for non-contact memory card |
| CN102591593A (en) * | 2011-12-28 | 2012-07-18 | 华为技术有限公司 | Method for switching hybrid storage modes, device and system |
| CN103116550A (en) * | 2013-01-11 | 2013-05-22 | 深圳市硅格半导体有限公司 | Method and device for switching physical block work mode in flash memory |
| CN106843762A (en) * | 2017-01-17 | 2017-06-13 | 北京联想核芯科技有限公司 | The method and solid state hard disc of managing storage area |
| CN107291626A (en) * | 2017-06-19 | 2017-10-24 | 北京小米移动软件有限公司 | Date storage method and device |
| CN107357534A (en) * | 2017-07-18 | 2017-11-17 | 深圳市德名利电子有限公司 | A kind of dynamic switching method and system of flash block pattern |
| US20190103163A1 (en) * | 2017-09-29 | 2019-04-04 | Phison Electronics Corp. | Memory management method, memory control circuit unit and memory storage device |
| CN108255419A (en) * | 2017-12-19 | 2018-07-06 | 深圳忆联信息***有限公司 | A kind of abrasion equilibrium method and SSD for TLC types SSD |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110968524A (en) * | 2019-12-09 | 2020-04-07 | Oppo广东移动通信有限公司 | Data storage control method, device, storage medium and electronic device |
| CN110968524B (en) * | 2019-12-09 | 2022-04-12 | Oppo广东移动通信有限公司 | Data storage control method, device, storage medium and electronic device |
| CN111159058A (en) * | 2019-12-27 | 2020-05-15 | 深圳大普微电子科技有限公司 | Wear leveling method and device and nonvolatile storage equipment |
| CN111159058B (en) * | 2019-12-27 | 2022-03-04 | 深圳大普微电子科技有限公司 | Wear leveling method and device and nonvolatile storage equipment |
| CN113392036A (en) * | 2020-03-11 | 2021-09-14 | 深圳星火半导体科技有限公司 | Solid-state memory and data writing method and device thereof |
| CN113392036B (en) * | 2020-03-11 | 2024-02-02 | 深圳星火半导体科技有限公司 | Solid-state memory and data writing method and device thereof |
| WO2023035120A1 (en) * | 2021-09-07 | 2023-03-16 | 华为技术有限公司 | Method and apparatus for managing data |
| CN115909544A (en) * | 2022-12-13 | 2023-04-04 | 江苏都万电子科技有限公司 | Memory and storage method |
| CN116884464A (en) * | 2023-09-06 | 2023-10-13 | 上海芯存天下电子科技有限公司 | flash chip erasing method and device and flash chip |
| CN116884464B (en) * | 2023-09-06 | 2023-12-05 | 上海芯存天下电子科技有限公司 | flash chip erasing method and device and flash chip |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110413224A (en) | Data storage method and device and memory | |
| US11880602B2 (en) | Data writing method and storage device | |
| US10387062B2 (en) | Storage system with cells changeable between two different level cell modes based on predicted lifetime | |
| US11704239B2 (en) | Garbage collection method for storage medium, storage medium, and program product | |
| CN103019970B (en) | Memory storage and control method thereof | |
| CN101673245B (en) | Comprise signal conditioning package and the storage management method of memory management unit | |
| CN102841851B (en) | Flash memory management method and flash memory device | |
| TWI630540B (en) | Data storage device and method for operating non-volatile memory | |
| EP2915051B1 (en) | Memory device and host device | |
| CN104423894B (en) | Data memory device and method for controlling flash memory | |
| CN103608782A (en) | Selective data storage in LSB and MSB pages | |
| CN102541602A (en) | Interface preloading device and interface preloading method | |
| CN105808156A (en) | Method for writing data into solid state drive and solid state drive | |
| CN102981971B (en) | A kind of phase transition storage loss equalizing method of quick response | |
| CN113093993B (en) | Flash memory space dynamic allocation method and solid state disk | |
| CN108108128A (en) | A kind of abrasion equilibrium method and SSD for mixing SSD | |
| TW200928735A (en) | System, method, and computer program product for increasing spare space in memory to extend a lifetime of the memory | |
| CN102880556A (en) | Wear leveling method and system of Nand Flash | |
| JP2009099149A (en) | Control method of adaptive hybrid density memory storage device, and adaptive hybrid density memory storage device | |
| CN101499315B (en) | Average abrasion method of flash memory and its controller | |
| CN109032517A (en) | A kind of method, apparatus and computer readable storage medium of data rule | |
| CN106951186B (en) | Data programming method, memory storage device and memory control circuit unit | |
| CN103885724A (en) | Memory system structure based on phase change memorizers and loss balancing algorithm of memory system structure | |
| CN102981972A (en) | Wear-leveling method for phase change memory | |
| CN109240615A (en) | Data reading method, device and equipment of solid state disk |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 518000 floors 1-3 and 4 of buildings 4 and 8, zone 2, Zhongguan honghualing Industrial South Zone, No. 1213 Liuxian Avenue, Pingshan community, Taoyuan Street, Nanshan District, Shenzhen, Guangdong Applicant after: BIWIN STORAGE TECHNOLOGY Co.,Ltd. Address before: 518000 1st, 2nd, 4th and 5th floors of No.4 factory building, tongfuyu industrial town, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Applicant before: BIWIN STORAGE TECHNOLOGY Co.,Ltd. |
|
| CB02 | Change of applicant information |