CN110401343A - The parallel booster circuit of dual charge pump - Google Patents
The parallel booster circuit of dual charge pump Download PDFInfo
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- CN110401343A CN110401343A CN201910601897.6A CN201910601897A CN110401343A CN 110401343 A CN110401343 A CN 110401343A CN 201910601897 A CN201910601897 A CN 201910601897A CN 110401343 A CN110401343 A CN 110401343A
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- switching tube
- charge pump
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- pump circuit
- switch pipe
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- 230000009977 dual effect Effects 0.000 title claims abstract description 22
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- 230000005611 electricity Effects 0.000 claims description 10
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- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000000087 stabilizing effect Effects 0.000 claims description 2
- 230000000994 depressogenic effect Effects 0.000 claims 1
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- 240000002853 Nelumbo nucifera Species 0.000 description 2
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- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
- H02M3/077—Charge pumps of the Schenkel-type with parallel connected charge pump stages
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention discloses a kind of booster circuits that dual charge pump is parallel, including two cascade first charge pump circuits, the input terminal of first charge pump circuit is equipped with the second charge pump circuit, second charge pump circuit includes four switching tube M5-M8, switching tube M5 is through capacitor C2P connection switch pipe M6, the common end connection switch pipe M7 of switching tube M5 and capacitor C2P, the common end connection switch pipe M8 of switching tube M6 and capacitor C2P, switching tube M6 and M7 are all connected with level VCI, switching tube M5 connection level VSSA, switching tube M8 output end connects electric capacity of voltage regulation C2, electric capacity of voltage regulation C2 exports boost voltage to first charge pump circuit.The present invention structure parallel using dual charge pump, can also be raised to relatively high voltage without cascading more charge pump circuit.
Description
Technical field
The present invention relates to charge pump circuit fields, particularly relate to a kind of booster circuit that dual charge pump is parallel.
Background technique
Charge pump circuit is applied to the driving circuit of liquid crystal display due to having the characteristics that boost and be depressured extensively
In.Generally in order to save chip cost, chip only can an external 3v or so main power source.And the driving circuit of display screen, by
In TFT to be driven (thin film transistor (TFT)) grid and carry out data transmission, need gate driving circuit (gate circuit) and source electrode
Driving circuit (source and gamma circuit), in order to guarantee preferably to show picture, the range of general data can be wider, 3v
Power supply be inadequate.So needing charge pump circuit, to the supply voltage of gate circuit offer ± 12V or so, give simultaneously
The supply voltage of source and gamma circuit offer ± 6V or so.And in order to continue to reduce the charge and discharge of cost or even charge pump
Capacitor (fly cap) and electric capacity of voltage regulation, all meeting are built-in in the chips.
For above application environment, for the charge pump of built-in capacitance, not due to fly cap capacitor and electric capacity of voltage regulation
It may be made big, while in order to further save area, for the charge pump construction of high pressure, not will use high-voltage tube generally,
Therefore the efficiency of charge pump how is improved, and how the power range of clock control signal is handled, and is just avoided that without high pressure
Level conversion, become particularly significant.
This charge pump is by a kind of structure of N grades of CELL1 cascades to the main frame of previous charge pump as shown in Figure 1:.Figure
In give a kind of circuit diagram that three-level cascade boosts to 4 times of VCI.In CELL1 clock control export signal CK1P with
CK1N is the signal of a pair of of reverse phase, as shown in Figure 2.The level of signal switches between 0~3v (VCI level), is a square wave.
Capacitor C1P and C1N is charge and discharge capacitance, and capacitor C1 is electric capacity of voltage regulation.NMOS tube M1 and M2, PMOS tube M3 and M4 are switching tubes.
When CK1P is VCI level, and CK1N is 0 level, the voltage of B point is VCI, and the voltage of A point is 2*VCI.M3 is beaten at this time
It opens, the output of V1 is 2*VCI.In subsequent time, when CK1P is 0 level, and CK1N is VCI level, due to capacitor both sides
The characteristic that remains unchanged of charge, the voltage of B point is 2*VCI, and the voltage of A point is VCI.M4 is opened at this time, and the output of V1 is 2*
The working principle of VCI, each CELL are identical, therefore, to be raised to higher voltage, it is necessary to more CELL1 cascades.
The major defect of this circuit is: if to be raised to relatively high voltage, it is necessary to more CELL1 cascades, because
This efficiency is relatively low, and shared area is also bigger.
Summary of the invention
The present invention proposes a kind of booster circuit that dual charge pump is parallel, solves in the prior art if to be raised to relatively high
Voltage, it is necessary to more CELL1 cascades, therefore efficiency is relatively low, shared area also bigger problem.
The technical scheme of the present invention is realized as follows:
A kind of booster circuit that dual charge pump is parallel, including two cascade first charge pump circuits, first charge
The input terminal of pump circuit is equipped with the second charge pump circuit, and second charge pump circuit includes four switching tube M5-M8, described to open
Common end connection switch pipe M7 of the pipe M5 through capacitor C2P connection switch pipe M6, the switching tube M5 and capacitor C2P is closed, it is described to open
The common end connection switch pipe M8 of pipe M6 and capacitor C2P is closed, the switching tube M6 and M7 is all connected with level VCI, the switching tube
M5 connection level VSSA, the switching tube M8 output end connect electric capacity of voltage regulation C2, and electric capacity of voltage regulation C2 exports boost voltage to one
First charge pump circuit.
As a preferred embodiment of the present invention, the number of second charge pump circuit is 2, two the second charge pumps
Circuit uses mirror image, and the output end of two the second charge pump circuits is all connected with electric capacity of voltage regulation C2.
As a preferred embodiment of the present invention, first charge pump circuit includes switching tube M1-M4, the pressure stabilizing
Capacitor C2 is separately connected the switching tube M1 and switching tube M2, the switching tube M1 connection switch pipe M4 and capacitor C1P, described to open
Pipe M2 connection switch pipe M3 and capacitor C1N, the switching tube M3 connection capacitor C1N, the switching tube M4 connection capacitor C1P are closed,
The input terminal of the capacitor C1P connects control sequential CK2P, and the input terminal of the capacitor C1N connects control sequential CK2N, described
Switching tube M3-M4 output end connects electric capacity of voltage regulation, exports stable boost voltage.
As a preferred embodiment of the present invention, the control sequential CK2N and CK2P is the square wave of two-phase.
A kind of booster circuit that dual charge pump is parallel, including first charge pump circuit and two the second charge pump electricity
Road, second charge pump circuit include switching tube M1-M4, and another second charge pump circuit includes switching tube M5-M8, described to open
It closes pipe M1 to connect through capacitor C1 with switching tube M2, the common end connection switch pipe M3 of the switching tube M1 and capacitor C1 are described to open
The common end connection switch pipe M4 of pipe M2 and capacitor C1 are closed, the switching tube M2 and M3 is all connected with level VCI, the switching tube M1
Level VSSA is connected, the output end of switching tube M4 connects electric capacity of voltage regulation C11, electric capacity of voltage regulation C11 connection switch pipe M7；Switching tube
Common end connection switch pipe M5 of the M7 through capacitor C2 connection switch pipe M8, switching tube M7 and capacitor C2, switching tube M5 connection level
The output end of the common end connection switch pipe M6 of VSSA, switching tube M8 and capacitor C2, switching tube M8 connect electric capacity of voltage regulation C22, surely
The output end of voltage capacitance C22 connects the first charge pump circuit, and the first charge pump circuit exports boost level.
It further include for providing grid control signal to switching tube M6/M8 as a preferred embodiment of the present invention
First charge pump circuit.
As a preferred embodiment of the present invention, first charge pump circuit is that middle pressure metal-oxide-semiconductor rises high voltage electricity pump.
The beneficial effects of the present invention are: using the parallel structure of dual charge pump, without cascading more charge pump circuit
Relatively high voltage can also be raised to.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention without any creative labor, may be used also for those of ordinary skill in the art
To obtain other drawings based on these drawings.
Fig. 1 is the schematic diagram of charge pump booster circuit in the prior art；
Fig. 2 is the signal timing diagram of charge pump booster circuit；
Fig. 3 is a kind of circuit diagram for the booster circuit embodiment one that dual charge pump is parallel of the present invention；
Fig. 4 is a kind of circuit diagram for the booster circuit embodiment two that dual charge pump is parallel of the present invention；,
Fig. 5 is a kind of circuit diagram for the booster circuit embodiment three that dual charge pump is parallel of the present invention；
Fig. 6 is to provide the circuit diagram of the first charge pump circuit of grid control signal.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Embodiment one
As shown in figure 3, the invention proposes a kind of booster circuit that dual charge pump is parallel, including two cascade first electricity
The input terminal of lotus pump circuit (CELL1), the first charge pump circuit is equipped with the second charge pump circuit (CELL2), the second charge pump electricity
Road includes four switching tube M5-M8, and switching tube M5 is public with capacitor C2P's through capacitor C2P connection switch pipe M6, switching tube M5
The common end connection switch pipe M8 of connection switch pipe M7, switching tube M6 and capacitor C2P are held, switching tube M6 and M7 are all connected with level
VCI, switching tube M5 connection level VSSA, switching tube M8 output end connect electric capacity of voltage regulation C2, and electric capacity of voltage regulation C2 exports boost voltage
To first charge pump circuit.
Clock control signal C2P/C2N is consistent with timing in Fig. 2, and only the range of level is different: assuming that at the TI moment,
M5 and M6 in CELL2 unit are opened, and the voltage at the both ends capacitor C2P is respectively VSSA (0V)/VCI (3V) at this time.In T2
It carves, switching tube M7 and M8 are opened, and M5 and M6 is closed at this time.The voltage on the left side C2P is switched to VCI by VSSA, due to capacitor both sides
The characteristic that remains unchanged of charge, the voltage on the right side of C2P boosts to 2 times of VCI by VCI.When M8 is opened, the electricity of VH1 point
Pressure is 2*VCI.Due to there are electric capacity of voltage regulation C2, thus the voltage of VH1 will not be drawn when CELL1 works it is very low, only
It wants CELL2 that charge can be replenished in time and gives electric capacity of voltage regulation C2, it is ensured that entire charge pump works normally.In order to improve entire electricity
The carrying load ability of lotus pump, CELL2 can also be parallel, and clock is two-phase, that is, guarantees always there is switch conduction in T1 T2
It charges to electric capacity of voltage regulation C2.
Embodiment two
The number of second charge pump circuit is 2, and two the second charge pump circuits use mirror image (ping-pong structure),
The output end of two the second charge pump circuits is all connected with electric capacity of voltage regulation C2.
In the above two embodiments, the circuit structure of the first charge pump is all the same, and the first charge pump circuit includes switch
Pipe M1-M4, electric capacity of voltage regulation C2 are separately connected switching tube M1 and switching tube M2, switching tube M1 connection switch pipe M4 and capacitor C1P,
Switching tube M2 connection switch pipe M3 and capacitor C1N, switching tube M3 connection capacitor C1N, switching tube M4 connection capacitor C1P, capacitor C1P
Input terminal connect control sequential CK2P, the input terminal of capacitor C1N connects control sequential CK2N, and switching tube M3-M4 output end connects
Electric capacity of voltage regulation is connect, stable boost voltage is exported.Control sequential CK2N and CK2P are the square wave of two-phase.
When M5/M6 is opened, M11 and M12 are opened, above the electric charge transfer to C2 above capacitor C3P.Work as M7/M8
When opening, M9 and M10 are opened and are charged to C3P.At this time above the electric charge transfer to C2 on C2P.The table tennis knot of this CELL2
Structure, it is ensured that the charge of electric capacity of voltage regulation C2 is timely supplemented, so that the input voltage of back CELL1 is high as far as possible, so as to
Charge pump output voltage value can be close to theoretical value, reduce loss of charge to the greatest extent.Due to CELL1 input voltage VH1 theoretically
It can achieve 2*VCI, clock CK2P and CK2N in Fig. 3 and Fig. 4 can become 0 by level conversion (level_shift)
The clock signal of~VH1 voltage range, so can theoretically reach 4*VCI by the voltage VH2 that CELL1 is exported, and the
The output voltage VH3 of second level CELL1 can reach 6*VCI.Compared to the charge pump construction in Fig. 1, with the CELL1 grade of three-level
Connection, output voltage can only achieve 4*VCI.And Fig. 3 and Fig. 4 is only used due to using the parallel structure of CELL1 and CELL2
Three-level can be raised to voltage 6*VCI, and efficiency improves 30%.
Embodiment three
As shown in figure 5, the invention also provides a kind of booster circuit that dual charge pump is parallel, including first charge pump
Circuit and two the second charge pump circuits, second charge pump circuit include switching tube M1-M4, another second charge pump circuit
Including switching tube M5-M8, switching tube M1 is connect through capacitor C1 with switching tube M2, and switching tube M1 is connect with the common end of capacitor C1
The common end connection switch pipe M4 of switching tube M3, switching tube M2 and capacitor C1, switching tube M2 and M3 are all connected with level VCI, switch
The output end of pipe M1 connection level VSSA, switching tube M4 connect electric capacity of voltage regulation C11, electric capacity of voltage regulation C11 connection switch pipe M7；It opens
Close common end connection switch pipe M5 of the pipe M7 through capacitor C2 connection switch pipe M8, switching tube M7 and capacitor C2, switching tube M5 connection
The output end of the common end connection switch pipe M6 of level VSSA, switching tube M8 and capacitor C2, switching tube M8 connect electric capacity of voltage regulation
The output end of C22, electric capacity of voltage regulation C22 connect the first charge pump circuit, and the first charge pump circuit exports boost level.It further include using
In the first charge pump circuit to switching tube M6/M8 offer grid control signal.First charge pump circuit is middle pressure metal-oxide-semiconductor liter
High voltage electricity pump.
In the embodiment, circuit is made of a CELL1 unit and two CELL2 units, the voltage of VH1 in figure
Equal to 2*VCI, the voltage of VH2 is equal to 4*VCI, when the signal level range of CK2P and CK2N in Fig. 5 be 0~VH1 when
It waits, the voltage of VH3 is equal to 6*VCI.Reach identical effect with Fig. 3 Fig. 4.The grid voltage of switching tube M1/M2/M3 in Fig. 5
0~VH1 of gate voltage range of 0~VCI of range, switching tube M4/M5/M7.The gate voltage range of M6 and M8 is in order not to occurring
The problem of over-voltage, can only control between VH1~VH2, so the grid control signal of switching tube M6/M8 cannot pass through level_
Shift is realized.CELL1 unit can serve as the effect of level_shift, VH1 and VH2 in Fig. 6 in VH1 and VH2, with Fig. 5
It is connected.CK2P and CK2N are that level is the signal of 0~VH1 after converting by level_shift, so switching tube M6/M8
The level range of grid control signal CK2P_VH1_VH2 and CK2N_VH1_VH2 are VH1~VH2, and difference only has 2*VCI, no
The problem of will appear over-voltage.
The common techniques feature of one~embodiment of above-described embodiment three is that charge pump circuit is parallel, in embodiment one~implementation
In example two, for the first charge pump circuit cascade, three kinds of embodiment it is cascade be the second charge pump circuit.
The present invention using the parallel structure of dual charge pump, without cascade more charge pump circuit can also be raised to it is relatively high
Voltage.
The above is merely preferred embodiments of the present invention, be not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (7)
1. a kind of booster circuit that dual charge pump is parallel, it is characterised in that: described including two cascade first charge pump circuits
The input terminal of first charge pump circuit is equipped with the second charge pump circuit, and second charge pump circuit includes four switching tube M5-
The common end connection switch pipe of M8, the switching tube M5 through capacitor C2P connection switch pipe M6, the switching tube M5 and capacitor C2P
The common end connection switch pipe M8 of M7, the switching tube M6 and capacitor C2P, the switching tube M6 and M7 are all connected with level VCI, institute
Switching tube M5 connection level VSSA is stated, the switching tube M8 output end connects electric capacity of voltage regulation C2, electric capacity of voltage regulation C2 output boosting electricity
It is depressed into first charge pump circuit.
2. the parallel booster circuit of dual charge pump according to claim 1, it is characterised in that: second charge pump circuit
Number be 2, two the second charge pump circuits use mirror image, and the output end of two the second charge pump circuits is all connected with
Electric capacity of voltage regulation C2.
3. the parallel booster circuit of dual charge pump according to claim 1, it is characterised in that: first charge pump circuit
Including switching tube M1-M4, the electric capacity of voltage regulation C2 is separately connected the switching tube M1 and switching tube M2, the switching tube M1 connection
Switching tube M4 and capacitor C1P, the switching tube M2 connection switch pipe M3 and capacitor C1N, the switching tube M3 connection capacitor C1N,
The input terminal of the switching tube M4 connection capacitor C1P, the capacitor C1P connect control sequential CK2P, the input of the capacitor C1N
End connection control sequential CK2N, the switching tube M3-M4 output end connect electric capacity of voltage regulation, export stable boost voltage.
4. the parallel booster circuit of dual charge pump according to claim 3, it is characterised in that: the control sequential CK2N and
CK2P is the square wave of two-phase.
5. a kind of booster circuit that dual charge pump is parallel, it is characterised in that: including first charge pump circuit and two second
Charge pump circuit, second charge pump circuit include switching tube M1-M4, and another second charge pump circuit includes switching tube M5-
M8, the switching tube M1 are connect through capacitor C1 with switching tube M2, the common end connection switch pipe of the switching tube M1 and capacitor C1
The common end connection switch pipe M4 of M3, the switching tube M2 and capacitor C1, the switching tube M2 and M3 are all connected with level VCI, institute
State the output end connection electric capacity of voltage regulation C11 of switching tube M1 connection level VSSA, switching tube M4, electric capacity of voltage regulation C11 connection switch pipe
M7；Switching tube M7 the common end connection switch pipe M5 through capacitor C2 connection switch pipe M8, switching tube M7 and capacitor C2, switching tube M5
Connect the common end connection switch pipe M6 of level VSSA, switching tube M8 and capacitor C2, the output end connection pressure stabilizing electricity of switching tube M8
Hold C22, the output end of electric capacity of voltage regulation C22 connects the first charge pump circuit, and the first charge pump circuit exports boost level.
6. the parallel booster circuit of dual charge pump according to claim 5, it is characterised in that: further include for switching tube
First charge pump circuit of M6/M8 offer grid control signal.
7. the parallel booster circuit of dual charge pump according to claim 6, it is characterised in that: first charge pump circuit
High voltage electricity pump is risen for middle pressure metal-oxide-semiconductor.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910601897.6A CN110401343B (en) | 2019-07-05 | 2019-07-05 | Dual charge pump parallel boost circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910601897.6A CN110401343B (en) | 2019-07-05 | 2019-07-05 | Dual charge pump parallel boost circuit |
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| CN110401343A true CN110401343A (en) | 2019-11-01 |
| CN110401343B CN110401343B (en) | 2024-04-02 |
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| CN110401343B (en) | 2024-04-02 |
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