CN110396664A - Ground loop, chamber and Pvd equipment - Google Patents
Ground loop, chamber and Pvd equipment Download PDFInfo
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- CN110396664A CN110396664A CN201810374628.6A CN201810374628A CN110396664A CN 110396664 A CN110396664 A CN 110396664A CN 201810374628 A CN201810374628 A CN 201810374628A CN 110396664 A CN110396664 A CN 110396664A
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- conducting ring
- ring
- ground loop
- conducting
- shielding part
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
Abstract
The disclosure provides a kind of ground loop, chamber and Pvd equipment.Ground loop includes: the first conducting ring, the second conducting ring and the multiple elastic devices for being electrically connected the first conducting ring and the second conducting ring, wherein, first central axis of the first conducting ring and the second centerline axis parallel of the second conducting ring are overlapped, and multiple elastic devices are configured such that the first conducting ring and the second conducting ring can be along the direction relative motions of the first central axis.Elastic device in the ground loop can increase the adjustable range between the first conducting ring and the second conducting ring.
Description
Technical field
Embodiment of the disclosure is related to a kind of ground loop, chamber and Pvd equipment.
Background technique
In integrated circuit fabrication process, physical vapour deposition (PVD) (Physical Vapor Deposition, PVD) mode
Due to film uniformity, uniformity is more excellent and process window is wider, is able to achieve the techniques such as the higher through-hole filling of depth-to-width ratio, wide
It is general to be used to deposit the associated materials layers such as many kinds of different metal layers, hard exposure mask.But physical vapour deposition (PVD) sputtering equipment is to reality
The deposition of existing high density TiN, other metals and metallic compound high-density film then need to carry out technological parameter various
Adjustment, needs to increase hardware configuration also when necessary to realize process goal to meet the need of more advanced integrated circuit technology
It asks.
Conventional DC sputtering equipment is difficult meet the needs of more advanced process, and therefore, radio frequency and DC sputturing method splash
The system of penetrating starts to be widely used in advanced manufacturing process.Radio frequency has more compared with the equipment of DC sputturing method is compared with DC equipment
High plasma density, lower sputtering particle energy, in not damaged technique, the preparation of high-density film, film performance
Improve etc. has more advantages.
Summary of the invention
A kind of ground loop chamber and Pvd equipment are provided according to one embodiment of the disclosure.The ground loop
It include: the first conducting ring, the second conducting ring and the multiple bullets for being electrically connected first conducting ring and second conducting ring
Property device, wherein the second centerline axis parallel of the first central axis of first conducting ring and second conducting ring or
It is overlapped, the multiple elastic device is configured such that first conducting ring and second conducting ring can be along described first
The direction relative motion of mandrel line.
In some instances, along the direction of first central axis, first conducting ring and second conducting ring
Between the distance that can be movable relatively be 1-30mm.
In some instances, each of the multiple elastic device includes: connecting rod, is configured as limiting described first
The direction of relative movement of conducting ring and second conducting ring is along the direction of first central axis；And it is set in described
Elastomeric element in connecting rod, the elastomeric element is configured as by the way that deformation occurs so that first conducting ring and described
Direction relative motion of two conducting rings along first central axis.
In some instances, one end of the elastomeric element and first conducting ring are relatively fixed, the elastomeric element
The other end and second conducting ring it is relatively fixed.
In some instances, at least one of first conducting ring and second conducting ring and the elastic device
Junction is provided with first and lures electric coil, with enhance at least one of first conducting ring and second conducting ring with it is described
Electric conductivity between elastic device.
In some instances, the multiple elastic device is uniformly distributed along the circumferential direction of first conducting ring.
In some instances, the quantity of the multiple elastic device is no less than 8.
In some instances, along the direction of first central axis, first conducting ring and second conducting ring
Part is overlapping, and the elastomeric element is between first conducting ring and the overlapping part of second conducting ring.
In some instances, the internal diameter of first conducting ring is less than the internal diameter of second conducting ring, and described first leads
Electric ring includes first annular side wall, and the first annular side wall is in the section in the radial direction of first conducting ring along described
The direction of first central axis extends, and the medial end of second conducting ring along first conducting ring radial direction with
The distance between described first annular side wall is no more than 5mm.
In some instances, the internal diameter of first conducting ring is less than the internal diameter of second conducting ring, and described second leads
Electric ring includes the second annular sidewall, and second annular sidewall is in the section in the radial direction of second conducting ring along described
The direction of second central axis extends, and the outboard end of first conducting ring along second conducting ring radial direction with
The distance between described second annular sidewall is no more than 5mm.
A kind of chamber is provided according to one embodiment of the disclosure, comprising: cavity；Shielding part, the inner wall with the cavity
Connection；Pedestal including conductive shell and is used to support the supporting surface of workpiece to be processed；And described in any of the above-described example
Ground loop, wherein the supporting surface is connected on the shell perpendicular to first central axis, first conducting ring,
Second conducting ring is configured as abutting on the shielding part.
In some instances, support the second conducting ring holding when the elastic device is configured in deformed state
Connect the state on the shielding part.
In some instances, the junction of the shell of first conducting ring and the pedestal is provided with second and lures electric coil
To increase the electric conductivity between first conducting ring and the shell of the pedestal.
In some instances, along the radial direction of first conducting ring, the close shielding of first conducting ring
The distance between the end of part and the shielding part are no more than 5mm.
In some instances, second conducting ring includes elastic electrical connector, and second conducting ring passes through the bullet
Property electrical connector is connected on the shielding part.
In some instances, the shell of the pedestal, the ground loop and the shielding part are configured as being grounded.
A kind of Pvd equipment is provided according to one embodiment of the disclosure, including described in any of the above-described example
Chamber.
For the ground loop of the embodiment of the present disclosure, pass through adjustable first conducting ring of elastic device and the second conducting ring edge
The distance of the relative motion in the direction of the first central axis.In the Pvd equipment for including above-mentioned ground loop, pass through
Ground loop is designed as include the first conducting ring, elastic device and the second conducting ring structure, on the one hand, can guarantee pedestal
Shell and shielding part between it is good be electrically connected so that between base shell, ground loop and shielding part three formed etc.
Current potential；On the other hand, uniformity and the process deposition rate etc. that the adjustable range of target base spacing can be increased to adjust film
Important parameter increases the process window of equipment, avoids damaging equipment body in debugging process and when maloperation
Hardware.
Detailed description of the invention
In order to illustrate more clearly of the technical solution of the embodiment of the present disclosure, the attached drawing to embodiment is simply situated between below
It continues, it should be apparent that, the accompanying drawings in the following description merely relates to some embodiments of the present disclosure, rather than the limitation to the disclosure.
Fig. 1 is a kind of cross section structure schematic diagram of physical vapour deposition (PVD) (PVD) equipment；
Fig. 2A and Fig. 2 B is the cross section structure schematic diagram for the ground loop that an example of the present embodiment provides；
Fig. 2 C is the floor map of ground loop shown in Fig. 2A；
Fig. 2 D and Fig. 2 E are the cross section structure schematic diagram for the ground loop that another example of the present embodiment provides；
Fig. 2 F and Fig. 2 G are the cross section structure schematic diagram for the ground loop that another example of the present embodiment provides；
Fig. 3 A and Fig. 3 B are the partial cross section's structural schematic diagram for the chamber that an example of the present embodiment provides；
Fig. 3 C is the schematic top plan view of pedestal shown in Fig. 3 A and ground loop；
Fig. 4 A and Fig. 4 B are the partial cross section's structural schematic diagram for the chamber that another example of the present embodiment provides；
Fig. 5 A and Fig. 5 B are the partial cross section's structural schematic diagram for the chamber that another example of the present embodiment provides.
Specific embodiment
To keep the purposes, technical schemes and advantages of the embodiment of the present disclosure clearer, below in conjunction with the embodiment of the present disclosure
Attached drawing, the technical solution of the embodiment of the present disclosure is clearly and completely described.Obviously, described embodiment is this public affairs
The a part of the embodiment opened, instead of all the embodiments.Based on described embodiment of the disclosure, ordinary skill
Personnel's every other embodiment obtained under the premise of being not necessarily to creative work, belongs to the range of disclosure protection.
Unless otherwise defined, the technical term or scientific term that the disclosure uses should be tool in disclosure fields
The ordinary meaning for thering is the personage of general technical ability to be understood." first ", " second " used in the disclosure and similar word are simultaneously
Any sequence, quantity or importance are not indicated, and are used only to distinguish different component parts." comprising " or "comprising" etc.
Similar word means that the element or object before the word occur covers the element or object for appearing in the word presented hereinafter
And its it is equivalent, and it is not excluded for other elements or object.
Fig. 1 is a kind of cross section structure schematic diagram of physical vapour deposition (PVD) (PVD) equipment (for example, magnetron sputtering apparatus).Such as
Shown in Fig. 1, the magnetron sputtering apparatus for having radio frequency and DC sputturing method includes cavity 1, i.e. reaction cavity, and cavity 1 is configured
For ground connection.The magnetron sputtering apparatus further includes vacuum pump system 2, can be evacuated to reaction cavity 1 so as to reach high in cavity 1
In 10-6The vacuum degree of Torr；The gas source 4 of cavity 1 is connected to by flowmeter 3, gas source 4 is configured as setting to magnetron sputtering
It is standby that sputtering reaction gas is provided, for example, argon gas, nitrogen etc.；And it is sealed in the target 6 on cavity 1, for example, target 6 can be with
It is metal or metallic compound.The magnetron sputtering apparatus can apply electricity to target 6 by radio-frequency power supply 18 and DC power supply 19
Pressure, for example, radio-frequency power supply frequency can be 2MHz, 13.56MHz, 40MHz, 60MHz etc..Radio-frequency power supply 18 and DC power supply 19
The cyclic currents expansion electrode 21 of 6 top of target is introduced to by each self-electrode.Include in side of the target 6 far from cavity 1
Insulating materials 7 is filled with the deionized water 8 for cooling down target 6 between insulating materials 7 and target 6.
As shown in Figure 1, including the pedestal 5 of bearing wafer 11 in cavity 1, pedestal 5 has heating or refrigerating function, example
Such as, pedestal 5 can carry out high temperature setting and heat to chip 11 disposed thereon.When sputtering, DC power supply can be biased to
Target 6 makes it become negative pressure relative to the cavity 1 of ground connection, so that argon gas discharging generates plasma, by positively charged argon ion
It is attracted to the target 6 of back bias voltage.When the energy of argon ion is sufficiently high, the surface of metallic atom evolution target 6 and deposition can be made
On chip 11.The side of the separate cavity 1 of target 6 is provided with magnetron 9 and motor 12.Magnetron 9 includes having phase
The sputter deposition rate of magnetron sputtering apparatus can be greatly improved in the interior outer magnetic pole of reversed polarity, magnetron 9.Motor 12 can drive
The stainless steel flat plate of fixed magnetic pole along the axis of centres rotate, in this way can in all angles the equal magnetizing field of generation time, to reach more
Uniform target as sputter form, to realize the uniformity of film deposition.
As shown in Figure 1, the cavity 1 of side of the pedestal 5 far from target 6 outside be provided with regulating mechanism of capacitor (ACT) 16 and partially
Set radio frequency (Bias RF) power supply 17.When carrying out thin film sputtering, regulating mechanism of capacitor 16 and biasing radio-frequency power supply 17 are configured as
The bias on 11 surface of chip is adjusted, thus change the particle energy and plasma sheath thickness on 11 surface of chip, so as to improve
The stress and density of film.For example, biasing rf frequency is generally 2MHz or 13.56MHz.
As shown in Figure 1, further including the stainless steel pressure ring 23 and cavity shielding part 22 with constant weight in cavity 1.Pressure
Ring 23 is configured as that chip 11 being pressed on pedestal 5 in sputtering, is passed through the argon of certain pressure between pedestal 5 and chip 11 at this time
Gas (generally 1~5Torr) is, it can be achieved that heating of the pedestal 5 to chip 11, for example, 11 heating temperature highest of chip can achieve
About 400 DEG C.Chip 11 is heated by pedestal 5, it is ensured that chip 11 is the condition of high temperature in sputtering, and film can be improved
Density and adjust the stress of film.One end of pressure ring 23 is pressed on pedestal 5, and the other end is shelved on shielding part 22, shielding part
22 effect is that the plasma 10 for generating argon gas is kept apart with cavity 1, and pressure ring 23 is mainly used for preventing plasma diffusion
To the cavity bottom in 22 outside of shielding part, cavity is polluted.
In the environment of radio frequency and DC sputturing method, plasma density is larger, and the introducing of radio frequency is to cavity 1 and shielding
The ground connection environmental requirement of part 22 is very strict.If it is bad that fractional hardware is grounded environment, on the one hand will cause in 1 inner shield of cavity
The case where there is plasma leakage in region outside part 22, and the cavity outside shielding part 22 is lit；On the other hand, it is easy to make
Poor one end of ground connection in coelosis body, for example, spark phenomenon occurs for the joint faces such as the shell of pedestal 5 or pressure ring 23, that is, in reality
In the technical process of border, often since the earthing of casing of pedestal 5 is poor and pedestal 5 is loaded with higher RF energy, pedestal 5 is caused
Shell induce higher bias, in addition the plasma in shielding part 22 passes through the slot leakage of pressure ring 23 and shielding part 22
To outside shielding part 22, the bias accumulated with the shell of pedestal 5 influences each other, and is easy to cause the electricity such as the argon gas outside shielding part 22
From, and starter, when serious spark phenomenon can be caused on other component in the shell and cavity 1 of pedestal 5.This part starter etc.
Gas ions do not have any contribution to technique, but also will cause load radio-frequency power on the base and can not be totally absorbed in chip
On, to cause serious technological problems.
In order to avoid the appearance of the above problem, need to carry out good grounding design to the shell of shielding part 22 and pedestal 5.
In addition, during magnetron sputtering technique is debugged and is applied, often by adjusting (i.e. 6 direction of target of target base spacing 24
Adjust the uniformity and technique of deposition film the distance between surface and 11 surface of chip of chip 11, as shown in fig. 1)
The important parameters such as deposition rate.
Disclosed embodiment provides a kind of ground loop, chamber and Pvd equipment according to the present invention.The ground connection
Ring includes: the first conducting ring, the second conducting ring and the multiple elastic devices for being electrically connected the first conducting ring and the second conducting ring,
Wherein, it the first central axis of the first conducting ring and the second centerline axis parallel of the second conducting ring or is overlapped, multiple elasticity dresses
It sets and is configured such that the first conducting ring and the second conducting ring can be along the direction relative motions of the first central axis.
For the ground loop, by adjustable first conducting ring of elastic device and the second conducting ring along the first central axis
Direction relative motion distance.
Embodiment disclosed by the invention provides a kind of ground loop.Fig. 2A and Fig. 2 B connects for what an example of the present embodiment provided
The cross section structure schematic diagram of ground ring, Fig. 2 C are the floor map of ground loop shown in Fig. 2A.As shown in Figure 2 A and 2 B, it is grounded
Ring 300 includes the first conducting ring 310, the second conducting ring 330 and is electrically connected the first conducting ring 310 and the second conducting ring 330
Multiple elastic devices 320, also, in the first central axis 3001 of the first conducting ring 310 and the second of the second conducting ring 330
Mandrel line 3002 is parallel or is overlapped (Fig. 2A is overlapped as signal with the second central axis 3002 with the first central axis 3001), multiple
Elastic device 320 is configured such that the first conducting ring 310 and the second conducting ring 330 can be along the directions of the first central axis 3001
Relative motion.
Fig. 2A and Fig. 2 B is signal with two elastic devices in ground loop.First central axis 3001 and the second central axis
Line 3002 is respectively the axis perpendicular to the first conducting ring 310 and the annular surface of the second conducting ring 330.In addition, here " first
Central axis 3001 is parallel with the second central axis 3002 " it include strictly parallel and substantially parallel, two centers of substantially parallel finger
Angle between axis is less than 5 °.
In some instances, as shown in Figure 2 A and 2 B, each elastic device 320 includes connecting rod 321, and is set in
Elastomeric element 322 in connecting rod 321.Connecting rod 321 extends along the direction for being parallel to the first central axis 3001, and is configured
To limit the direction of relative movement of the first conducting ring 310 and the second conducting ring 330 as the direction along the first central axis 3001.Bullet
Property component 322 is configured as by the way that deformation occurs so that the first conducting ring 310 and the second conducting ring 330 are along the first central axis
3001 direction relative motion.
For example, elastomeric element 322 can be set in the flexible component in connecting rod 321, and elasticity including spring etc.
After elastic deformation occurs for component 322, the extending direction for being oriented parallel to connecting rod 321 of deformation power.Bullet as shown in Figure 2 A
Property component 322 is in rarefaction, and (rarefaction here is for the state of Fig. 2 B, but according to ground loop application
Demand when Pvd equipment, elastomeric element are still compressive state relative to its original force-free state), such as scheme
Elastomeric element 322 shown in 2B is in compressive state.By taking the second conducting ring 330 is fixed as an example, the first conducting ring 310 passes through
Elasticity of compression component 322 is so that the direction of its arrow meaning relative to the second conducting ring 330 in X direction moves, alternatively, elastic
Component 322 is configured as being changed from compression to rarefaction, so that the first conducting ring 310 is relative to the second conducting ring 330 along the side X
To the opposite direction of arrow move.
In some instances, as shown in Figure 2 A and 2 B, along the direction of the first central axis 3001, the first conducting ring 310
It is 1-30mm at a distance from can be movable relatively between the second conducting ring 330, that is, since elastomeric element 322 can deformation occurs, so that
First conducting ring 310 is between the second conducting ring 330 at a distance from can be movable relatively.Connecting rod 321 is along the first central axis
The length in 3001 direction is greater than 30mm, and the first conducting ring 310 is adjustable at a distance from relative motion between the second conducting ring 330
Adjusting range is 1-30mm.
In some instances, as shown in Figure 2 A and 2 B, one end of elastomeric element 322 and the first conducting ring 310 are relatively solid
It is fixed, that is, one end of close first conducting ring 310 of elastomeric element 322 and the first conducting ring 310 are relatively fixed；Elastomeric element 322
The other end and the second conducting ring 330 it is relatively fixed, that is, elastomeric element 322 close to the second conducting ring 330 one end and second
Conducting ring 330 is relatively fixed, to realize first conducting ring 310 and the second conducting ring 320 when deformation occurs for elastomeric element 322
It can be with relative motion.
For example, as shown in Figure 2 A and 2 B, one end of connecting rod 321 may be coupled to the first conducting ring 310, connecting rod
321 other end can pass through the through-hole that the second conducting ring 330 includes, so that 330 phase of the first conducting ring 310 and the second conducting ring
To movement.
For example, the second conducting ring 330 is fixed in the first conducting ring 310 and the second 330 relative motion of conducting ring,
First conducting ring 310 drive connecting rod 321 can by the through-hole of the second conducting ring 330 relative to the second conducting ring 330 along flat
Row is moved back and forth in the direction of the first central axis 3001.Connecting rod and the connection relationship of the second conducting ring are without being limited thereto, as long as
Connecting rod limits the elastomeric element being arranged on it and moves along the extending direction of connecting rod, so that the first conducting ring and the second conduction
Ring is along the direction relative motion perpendicular to supporting surface.
For example, as shown in figures 2 a-c, the first conducting ring 310 includes first annular face 311 and first annular side wall
312, first annular face 311 is perpendicular to the first central axis 3001, radial direction of the first annular side wall 312 in the first conducting ring 310
Section on direction 3003 (Y-direction shown in figure) extends along the direction of the first central axis 3001.
For example, as shown in figures 2 a-c, the second conducting ring 330 includes the second annular surface 331 and the second annular sidewall 333,
Second annular surface 331 is perpendicular to the second central axis 3002, radial direction of second annular sidewall 333 in the second conducting ring 330
Section in 3004 (Y-directions shown in figure) extends along the direction of the second central axis 3002.
In some instances, as shown in figures 2 a-c, one end of connecting rod 321 be fixed on the first conducting ring 310 with bullet
Property the first annular face 311 that connects of device 320 on, the other end of connecting rod 321 pass through the second conducting ring 330 far from the second ring
The through-hole that the end in shape face 331 includes.At this point, first conducting ring 310 and second is conductive along the direction of the first central axis 3001
330 part of ring is overlapping, and elastomeric element 322 is between the first conducting ring 310 and the overlapping part of the second conducting ring 330, that is, edge
The direction of first central axis 3001, the first conducting ring 310, elastomeric element 322 and the second conducting ring 330 have each other
Overlapping part.
In some instances, as shown in figures 2 a-c, the internal diameter of the first conducting ring 310 is less than in the second conducting ring 330
Diameter, the medial end (end close to the first conducting ring of the second conducting ring) of the second conducting ring 330 is along the first conducting ring 310
The distance between radial direction 3003 and first annular side wall 312 301 is no more than 5mm.For example, the inside of the second conducting ring 330
The distance between end and first annular side wall 312 301 is 1-2mm.
In some instances, as shown in figures 2 a-c, the internal diameter of the first conducting ring 310 is less than in the second conducting ring 330
Diameter, the outboard end (end close to the second conducting ring of the first conducting ring) of the first conducting ring 310 is along the second conducting ring 330
The distance between radial direction 3004 and the second annular sidewall 333 302 is no more than 5mm.For example, the outside of the first conducting ring 310
The distance between end and the second annular sidewall 333 302 is 1-2mm.
In some instances, as shown in Figure 2 C, the quantity of elastic device 320 is no less than 8.For example, elastic device 320
Quantity is 8-16.It is to increase between the first conducting ring and the second conducting ring that more elastic device is arranged in the present embodiment
Conductive connection.
In some instances, as shown in Figure 2 C, elastic device 320 is along the circumferential uniformly (for example, waiting of the first conducting ring 310
Spacing) distribution.However, being not particularly limited in accordance with an embodiment of the present disclosure for the specific distribution of connecting rod.
For example, the material of elastomeric element 322 may include the preferable copper material of electric conductivity, the present embodiment includes but is not limited to
This, can also be other materials with preferable electric conductivity.
In some instances, as shown in Figure 2 A, at least one of the first conducting ring 310 and the second conducting ring 330 and elasticity
The junction of device 320 includes first luring electric coil 410, with enhance the first conducting ring 310 and the second conducting ring 330 at least it
Electric conductivity between one and elastic device 320.
For example, the junction of the first conducting ring 310 and the second conducting ring 330 connecting with elastomeric element 322 is provided with
First lures electric coil 410, preferable between the first conducting ring 310, the second conducting ring 330 and elastomeric element 322 to guarantee
It is conductively connected.The present embodiment includes but is not limited to this, at least one of the first conducting ring 310 and the second conducting ring 330 and elasticity
Other components with preferable conductive characteristic can also be arranged in the junction of component 322.
For example, the cross section structure schematic diagram for the ground loop that another example that Fig. 2 D and Fig. 2 E are the present embodiment provides.Such as figure
Shown in 2D and Fig. 2 E, unlike example shown in Fig. 2A: the second conducting ring 330 does not include the second annular sidewall, only includes
Perpendicular to the second annular surface 331 of the second central axis, that is, the cross sectional shape of the second conducting ring 330 in the radial direction thereof is
Linear type.
For example, one end of connecting rod 321 can be fixed on the second conducting ring 330, the other end of connecting rod 321 passes through the
The through-hole for including of one conducting ring 310.
For example, elastomeric element 322 is located at the first of the first conducting ring 310 on the direction for being parallel to the second central axis
Between annular surface 311 and the second annular surface 331 of the second conducting ring 330.
In some instances, as shown in Fig. 2 D and Fig. 2 E, the internal diameter of the first conducting ring 310 is less than the second conducting ring 330
Internal diameter, the medial end (end close to the first conducting ring of the second conducting ring) of the second conducting ring 330 is along the first conducting ring 310
Radial direction 3003 and the distance between first annular side wall 312 301 be no more than 5mm.For example, the second conducting ring 330 is interior
The distance between side end and first annular side wall 312 301 is 1-2mm.
For example, elastomeric element as shown in Figure 2 D is in rarefaction, (rarefaction here is the shape relative to Fig. 2 E
For state, but according to ground loop be applied to Pvd equipment when demand, elastomeric element relative to its it is original it is non-by
Power state is still compressive state), elastomeric element 322 as shown in Figure 2 E is in compressive state.It is solid with the second conducting ring 330
For fixed, the first conducting ring 310 is by elasticity of compression component 322 so that its arrow relative to the second conducting ring 330 in X direction
The signified direction movement of head, alternatively, elastomeric element 322 is configured as being changed from compression to rarefaction, so that the first conducting ring
The 310 direction movements opposite relative to the arrow of the second conducting ring 330 in X direction.
Fig. 2 F and Fig. 2 G are the cross section structure schematic diagram for the ground loop that another example of the present embodiment provides.Such as Fig. 2 F and figure
Shown in 2G, one end of connecting rod 321 is fixed on the second conducting ring 330, and the other end of connecting rod 321 passes through the first conducting ring
310 through-hole for including.Elastomeric element 322 as shown in Figure 2 F is in a greater degree of tensional state (here more
Tensional state be for the state of Fig. 2 G, but according to ground loop be applied to Pvd equipment when need
Ask, elastomeric element is tensional state relative to its original force-free state), elastomeric element 322 as shown in Figure 2 G is in smaller
The tensional state of degree.By taking the second conducting ring 330 is fixed as an example, the first conducting ring 310 by elongated elastomeric member 322 with
Move the direction of its arrow meaning relative to the second conducting ring 330 in X direction, alternatively, elastomeric element 322 be configured as by
Biggish tensional state changes to lesser tensional state, so that the first conducting ring 310 is relative to the second conducting ring 330 along the side X
To the opposite direction of arrow move.
Embodiment of the disclosure also provides a kind of chamber, and Fig. 3 A and Fig. 3 B are the partial structurtes of chamber provided in this embodiment
Schematic diagram, as shown in Figure 3A and Figure 3B, chamber include cavity；The shielding part 200 being connect with the inner wall of cavity；Pedestal 100, including
The shell 110 of conduction and the supporting surface 101 for being used to support workpiece to be processed；And the ground loop 300 in above-described embodiment.Branch
Support face 101 is connected on shell 110 perpendicular to the first central axis, the first conducting ring 310, and the second conducting ring 330 is configured as
It abuts on shielding part 200.First conducting ring 310 therein is the inner ring in ground loop 300, and the second conducting ring 330 is ground connection
Outer ring in ring 300.
In above-mentioned chamber, by the way that ground loop is designed as including the first conducting ring, elastic device and the second conducting ring
Structure, on the one hand, can guarantee between the shell of pedestal and shielding part it is good be electrically connected, make shell, the ground connection of pedestal
Ring and shielding part three form equipotential to avoid radio frequency sparking and plasma leakage problem；On the other hand, can increase
The adjustable range of target base spacing, to increase the process window of equipment, the preferably uniformity of adjustment film and process deposits speed
The important parameters such as rate are to adapt to the demand of different process, avoid in debugging process and maloperation when damages the master of equipment
Body hardware does not need the additional various sizes of ground loop of production and without being adjusted between target base by destroying vacuum condition
Away from.
Just disclosed some embodiments are described in more detail according to the present invention below.In theory disclosed by the invention
In bright book, the supporting surface of pedestal refers on pedestal for carrying the plane of the side of workpiece to be added.Supporting surface is defined as in this way
Plane, be for the positional relationship of plane where other component and the supporting surface is better described and relative to the supporting surface
Motion conditions, but it is not meant to that the side surface of pedestal must be plane.For example, there is protrusion knot in the side surface of pedestal
In the case where structure, the supporting surface as plane can be for positioned at the plane of the bottom of these bulge-structures or by pedestal
The plane of any on the side surface.In addition, the pedestal is can be configured in Pvd equipment along perpendicular to this
The side of supporting surface moves upwards, that is, the first conducting ring and the second conducting ring can be in fortune opposite along the direction perpendicular to supporting surface
It is dynamic.
On the direction perpendicular to supporting surface, it is known as from the opposite side of the supporting surface of pedestal to the direction of supporting surface to "upper"
Direction, the direction of the opposite side of the supporting surface from supporting surface to pedestal is known as the direction to "lower".As a result, using "upper" and
The various positions relationship of "lower" modification has clear meaning.For example, raising and lowering.In addition, being parallel to supporting surface on edge
On direction, it is known as from the direction at the edge direction center of pedestal to the direction of "inner", from the direction of the center points toward edge of pedestal
Referred to as to the direction of "outside".Therefore, there has also been clear meanings for the relative positional relationship modified using "inner" and "outside".For example,
" inner ring " and " outer ring ".In addition, it should be noted that the term in orientation indicated above is only exemplary and indicates each portion
The relative positional relationship of part, in various devices disclosed by the invention or equipment part combination or whole device or equipment can
To rotate a certain angle on the whole.
In addition, workpiece to be added in the present disclosure for example can be used to support chip to be deposited pallet, can also
To be that individual chip to be deposited either chip is attached to the composite structure on pallet, disclosed embodiment pair according to the present invention
This is not particularly limited.
Referring to Fig. 3 A and Fig. 3 B, according to an embodiment of the present disclosure, Fig. 3 A shows the larger position of target base spacing in chamber
The schematic diagram set, after Fig. 3 B shows the rising certain distance of the first conducting ring 310 in pedestal 100 and ground loop 300, target base
The relatively small schematic diagram of spacing；Similarly, relative to position shown in Fig. 3 B, Fig. 3 A can also be considered as pedestal 100 and ground connection
The schematic diagram after the first conducting ring 310 decline certain distance in ring 300.
For example, the cavity can be round reaction cavity, the present embodiment to this with no restriction.Such as ground loop 300 is to enclose
Around the cyclic structure of pedestal 100.For example, the first conducting ring 310 is the circle around pedestal 100 and positioned at 300 inside of ground loop
Cyclic structure, the second conducting ring 330 are the cyclic structure around the peripheral side of the first conducting ring 310, i.e. the second conducting ring 330 is
A loop structure positioned at 300 outside of ground loop.
For example, as shown in Figure 3A and Figure 3B, the medial end of the second conducting ring 330 is along the radial direction side of the first conducting ring 310
It is no more than 5mm to the distance between first annular side wall 301, and/or, the outboard end of the first conducting ring 310 is led along second
The distance between the radial direction of electric ring 330 and the second annular sidewall 302 is no more than 5mm.It is thus possible to prevent from being located at shielding part
Plasma leakage in 200 causes outside shielding part 200.
In some instances, the shell 110 of pedestal 100, ground loop 300, shielding part 200 and cavity are configured as connecing
Ground.It is, the shell 110 of pedestal 100 is connected and is connect with cavity far from the bellows of 101 side of supporting surface by pedestal 100
Ground, shielding part 200 is connected to the side wall of cavity so that shielding part 200 is in ground state, and ground loop 300 is that electric conductivity is preferable
Aluminum or copper annulus, thus ground loop 300 can preferably be electrically connected pedestal 100 shell 110 and shielding part 200 with
Realize that shell 110, ground loop 300 and the shielding part 200 of pedestal 100 are in equipotential state, therefore, good ground connection environment
Both the leakage that plasma can have been prevented in turn ensures that the bias of base shell induction can be guided rapidly, avoids sparking
The generation of phenomenon, and ensure that the stability of technique.
In some instances, as shown in Figure 3A, the second conducting ring 330 includes the elastic electrical connector 332 of a circle, such as beryllium copper
Reed, the second conducting ring 330 pass through elastic electrical connector 332 and are connected on shielding part 200, that is, the second conducting ring 330 passes through bullet
Property electrical connector 332 realization be electrically connected with the good of shielding part 200.
For example, as shown in Figure 3A, elastic electrical connector 332 is located at side of second annular surface towards shielding part 200, and uses
In electrical connection shielding part 200 and the second annular surface, so that elastic electrical connector 332 can be realized electrical connection ground loop 300 and screen
The effect of shield 200.In addition, being not restricted to this in accordance with an embodiment of the present disclosure, other than beryllium copper reed, can also use
Other being capable of the good elastic electrical connector of conductive and elasticity.
For example, shell and the preferable connection characteristic of ground loop in order to realize pedestal, the first conducting ring and pedestal is outer
The junction of shell can also lure the component with preferable conductive characteristic such as electric coil (not shown) including second, to guarantee
Electrical connection properties between the two.
For example, also showing the workpiece to be added on the supporting surface 101 in the sectional view shown in Fig. 3 A and Fig. 3 B
1001, the lining 120 for the pedestal 100 for contacting or connecting with workpiece 1001 (such as chip) to be added is magnetic suspension current potential.Pedestal 100
Shell 110 and lining 120 between be provided with ceramic ring, thus by the shell 110 of pedestal 100 and lining 120 separate to avoid
The two conducting.
It in some instances, as shown in Figure 3A and Figure 3B, further include being located on pedestal 100 in embodiment disclosed by the invention
Pressure ring 500, a part of the pressure ring 500 and workpiece to be added 1001 are exposed in plasma sputtering region 1000.Pressure ring
500 one end is used to for workpiece 1001 to be added being pressed in the supporting surface 101 of pedestal 100, and the other end of pressure ring 500 is shelved on shielding
On part 200, pressure ring 500, ground loop 300 and 200 collective effect of shielding part are with by the chamber other than plasma and shielding part 200
Body is kept apart, and prevents plasma diffusion to cavity bottom.
Therefore, the ground loop that chamber disclosed by the invention includes is in radio frequency, DC sputturing method equipment in use, can be by base
The shell of seat with shielding part is good is attached, form good ground connection environment, thus avoid striking sparks and cavity in plasma
The problems such as body leaks.
For example, further including target in chamber provided in this embodiment (with reference to Fig. 1).In physical gas-phase deposition, example
Such as, it is frequently necessary to substantially adjust target base spacing (with reference to the target base spacing 24 in Fig. 1) in magnetron sputtering technique,
To meet the uniformity of film and the adjusting of sputter deposition rate, pedestal bias (substrate damage situation) etc., to meet
The demand of different manufacturing process.
General shielding part 200 is fixed on the inner wall of cavity, is connected to shielding part in the holding of the second conducting ring 330
When state on 200, due to being shielded the limitation of part 200, the position of the second conducting ring 330 can only generally be finely tuned.For example, the
Elastic electrical connector 332 between two conducting rings 330 and shielding part 200, such as beryllium copper reed have certain elasticity, shrink model
About 1-3mm is enclosed, therefore, in the state that the second conducting ring 330 is connected to shielding part 200, the second conducting ring 330 is along vertical
In distance range adjustable on the direction of supporting surface 101 be 1-3mm.
When adjusting target base spacing, the lifting of ground loop 300 is driven by the lifting of motor control pedestal 100, due to
First conducting ring 310 can be along the direction perpendicular to supporting surface 101 relative to the second conducting ring under the action of elastic device 320
330 movements (Fig. 3 A is that the first conducting ring 310 is located at low-end trim, and Fig. 3 B is that the first conducting ring 310 is located at high-end trim), because
This, the chamber that the embodiment of the present disclosure provides when adjust target base spacing, can non-shielded part limitation, that is, it is conductive including first
The ground loop of ring, the second conducting ring and elastic device plays the role of increasing the adjustable range of target base spacing.Thus, at this
In the chamber that embodiment provides, the important parameters such as uniformity and the process deposition rate of film can be preferably adjusted, are increased
Process window avoids injury device main body hardware in debugging process and when maloperation.In addition, between carrying out target base
When away from adjustment, the additional various sizes of ground loop of production is not needed, and without destroying vacuum environment, thus reduced costs.
In some instances, as shown in Figure 3A and Figure 3B, make second when elastic device 320 is configured in deformation state
Conducting ring 330 keeps the state being connected on shielding part 200.For example, the elastomeric element 322 in elastic device 320 is configured as
In deformation state, so that the second conducting ring 330 be made to keep the state being connected on shielding part 200.
For example, elastomeric element 322 can be set in the flexible component of connecting rod 321, and elastic portion including spring etc.
After elastic deformation occurs for part 322, the extending direction for being oriented parallel to connecting rod 321 of deformation power.Described in Fig. 3 A and Fig. 3 B
Exemplary structure in, elastomeric element 322 is in compressive state, so that the second conducting ring 330 can be closely connected to
On shielding part 200.
For example, in an example of the present embodiment, as shown in Figure 3A and Figure 3B, the second conducting ring 330 and elastic device 320
Vertical range of the part of connection away from 101 place plane of supporting surface is less than the portion that the first conducting ring 310 is connect with elastic device 320
Divide the vertical range away from 101 place plane of supporting surface, and one end of connecting rod 321 is fixed on the first conducting ring 310, connecting rod
321 other end passes through the through-hole for including of the second conducting ring 330.
For example, the rising of ground loop 300 is driven by the rising of motor control pedestal 100 when adjusting target base spacing,
That is, the second conducting ring 330 follows pedestal 100 to rise and has just abutted with shielding part 200, and as shown in Figure 3A, elastomeric element at this time
322 in rarefaction, (rarefaction here is for the state of Fig. 3 B, but due to needing to support the second conducting ring
It connects on shielding part, elastomeric element is still compressive state relative to its original force-free state).It is grounded when pedestal 100 drives
When ring 300 continues to rise, due to the restriction effect of shielding part 200, elastomeric element 322 is in compressive state (as shown in Figure 3B),
Therefore, on the one hand, elastomeric element 322 is applied to the upward power in 330 1 directions of the second conducting ring so that 330 energy of the second conducting ring
The state being connected on shielding part 200 is enough kept, to guarantee that there is good be electrically connected between ground loop 300 and shielding part 200
Connect effect；On the other hand, due to the restriction effect of shielding part 200, the second conducting ring 330 is fixed, and pedestal 100 is able to drive
First conducting ring 310 continues to rise, and the elastomeric element 322 being now placed between the first conducting ring and the second conducting ring is gradually pressed
Contracting, until pedestal 100 also rises to extreme position when elastomeric element 322 is in compression limit state.
In some instances, as shown in Figure 3A and Figure 3B, the main length with connecting rod 321 of the adjustable range of target base spacing
And the elastic range of elastomeric element 322 is related.
For example, length of the connecting rod 321 along the direction perpendicular to supporting surface 101 is greater than 30mm, the first conducting ring 310 and the
The distance of relative motion is 1-30mm between two conducting rings 330, to increase the adjustable extent of the target base spacing of equipment.This
The length of connecting rod 321 in embodiment is not fixed, but is limited by equipment, such as connecting rod 321 is mounted on the first conduction
After on ring 310, connecting rod 321 should be not higher than the height on 110 surface of shell of pedestal 100, in order to avoid manipulator is influenced into cavity
Transmit chip.
In embodiment of the disclosure, on the one hand, can when carrying out the adjusting of film thickness, uniformity and pedestal bias
The adjustment that position by changing pedestal easily carries out target base spacing increases the window of apparatus and process to reach process goal.
On the other hand, the ground loop is to the adjustment mode of target base spacing suitable for adjusting in real time to target base spacing technical process
It is whole, so that equipment be made to adapt to the demand changed greatly during the thin film preparation process of part to target base spacing, increase equipment
Therefore the flexibility ratio of technique when carrying out the adjustment of target base spacing, does not need the additional different size ground loops of production, and be not necessarily to
Vacuum environment is destroyed, to save cost.
For example, Fig. 3 C is the schematic top plan view of pedestal shown in Fig. 3 A and ground loop, as shown in Figure 3 C, the bullet in chamber
Property device 320 along pedestal 100 the circumferential uniformly distribution (for example, equally spacedly).However, in accordance with an embodiment of the present disclosure for even
The specific distribution of extension bar is not particularly limited.
Fig. 4 A and Fig. 4 B are the partial cross section's structural schematic diagram for the chamber that another example of the present embodiment provides.Such as Fig. 4 A and
Shown in Fig. 4 B, unlike example shown in Fig. 3 A: the part that the second conducting ring 330 is connect with elastic device 320 is away from support
The vertical range of 101 place plane of face is greater than the part that connect with elastic device 320 of the first conducting ring 310 away from 101 institute of supporting surface
It can be fixed on the second conducting ring 330 in one end of the vertical range of plane, and connecting rod 321, the other end of connecting rod 321
The through-hole for including of the first conducting ring 310 can be passed through.
In some instances, as shown in Figure 4 B, on the direction for being parallel to supporting surface 101, the outside of the first conducting ring 310
The distance between end (end of the close shielding part of the first conducting ring) and shielding part 200 303 is no more than 5mm.The present embodiment
In, the distance between the outboard end in the first annular face of the first conducting ring 310 and shielding part 200 303 is no more than 5mm, to prevent
Stop bit causes outside shielding part 200 in the plasma leakage in shielding part 200.For example, on the direction for being parallel to supporting surface 101,
The distance between the outboard end of first conducting ring 310 and shielding part 200 303 is 1-2mm.
For example, the rising of ground loop 300 is driven by the rising of motor control pedestal 100 when adjusting target base spacing,
That is, the second conducting ring 330 follows pedestal 100 to rise and has just abutted with shielding part 200, and as shown in Figure 4 A, elastomeric element at this time
322 in lesser degree of tensional state (for the state shown in Fig. 4 B), so that the second conducting ring 330
It is connected on shielding part 200.When pedestal 100 drives ground loop 300 to continue to rise, due to the restriction effect of shielding part 200, the
The position of two conducting rings 330 is held essentially constant, and the first conducting ring 310 is transported by through-hole thereon relative to connecting rod 321
Dynamic, at the same time, one end of elastomeric element 322 is driven to continue to rise for the first conducting ring 310 so that elastomeric element 322 is in bigger
The tensional state (as shown in Figure 4 B) of degree, therefore, on the one hand, elastomeric element 322 is applied to 330 1 directions of the second conducting ring
Upward pulling force so that the second conducting ring 330 is able to maintain the state for being connected to shielding part 200, thus guarantee ground loop 300 with
There is good electrical connection effect between shielding part 200；On the other hand, when the second conducting ring 330 is fixed, 100 band of pedestal
When dynamic first conducting ring 310 continues to rise, the elastomeric element 322 between the first conducting ring and the second conducting ring is gradually drawn
It stretches, until pedestal 100 also rises to extreme position when elastomeric element 322 is in limit of stretch state.
Fig. 5 A and Fig. 5 B are the partial cross section's structural schematic diagram for the chamber that another example of the present embodiment provides.Such as Fig. 5 A and
Shown in Fig. 5 B, unlike example shown in Fig. 2A: the cross sectional shape of the second conducting ring 330 is linear type, the second conducting ring
330 include being parallel to the second annular surfaces of supporting surface 101, i.e., relative to the second conducting ring shown in Fig. 2A, in this example the
Two conducting rings 330 only include the second annular surface for being parallel to supporting surface 101.
For example, as fig. 5 a and fig. 5b, on the direction perpendicular to supporting surface 101, elastomeric element 322, which is located at first, is led
Between the first annular face of electric ring 310 and the second annular surface of the second conducting ring 330.For example, one end of connecting rod 321 is fixed on
On second conducting ring 330, the other end of connecting rod 321 passes through the through-hole for including of the first conducting ring 310.
For example, as fig. 5 a and fig. 5b, two circle elasticity being provided between the second conducting ring 330 and shielding part 200 and are electrically connected
Fitting 332, the present embodiment include but is not limited to this, for example, it is also possible to which a circle elasticity electrical connector or more multi-turn is arranged.
In some instances, as shown in Figure 5A, on the direction for being parallel to supporting surface 101, the inside of the second conducting ring 330
The distance between first annular side wall of end and the first conducting ring 310 301 is no more than 5mm, to prevent stop bit in shielding part 200
Plasma leakage to shielding part 200 outside.For example, on the direction for being parallel to supporting surface 101, the second conducting ring 330 it is interior
The distance between first annular side wall of side end and the first conducting ring 310 301 is 1-2mm.
For example, the rising of ground loop 300 is driven by the rising of motor control pedestal 100 when adjusting target base spacing,
That is, the second conducting ring 330 follows pedestal 100 to rise and has just abutted with shielding part 200, and as shown in Figure 5A, elastomeric element at this time
322 in rarefaction, (rarefaction here is for the state of Fig. 5 B, but due to needing the second conducting ring
It is connected on shielding part, elastomeric element is still compressive state relative to its original force-free state).When the drive of pedestal 100 connects
When ground ring 300 continues to rise, due to the restriction effect of shielding part 200, the position of the second conducting ring 330 is held essentially constant, and
First conducting ring 310 is moved by through-hole thereon relative to connecting rod 321, and at the same time, the first conducting ring 310 is with dynamic elasticity
Continue to rise so that elastomeric element 322 is in compressive state (as shown in Figure 5 B), therefore in one end of component 322, on the one hand, elasticity
Component 322 is applied to the upward power in 330 1 directions of the second conducting ring and connects shielding so that the second conducting ring 330 is able to maintain to be against
State on part 200, to guarantee to be electrically connected effect with good between ground loop 300 and shielding part 200；On the other hand,
When the second conducting ring 330 is fixed, when pedestal 100 drives the first conducting ring 310 to continue to rise, it is located at the first conducting ring and the
Elastomeric element 322 between two conducting rings is gradually compressed, until when elastomeric element 322 is in compression limit state, pedestal 100
Also extreme position is risen to.
For example, the length of connecting rod 321 is unfixed in this example, for example, the length of connecting rod 321 is greater than 30mm.
Due to being limited by equipment, such as after connecting rod 321 is mounted on the second conducting ring 330 of ground loop 300, in pedestal 100
It should ensure that connecting rod 321 is not contacted or connected with cavity lower wall when being reduced to lowest order, to avoid ground loop 300 from pedestal
It falls off on 100.
The example for the ground loop specific structure that embodiment disclosed by the invention includes is not limited to the case where diagram, can also be
Other structures, and the first conducting ring is also not necessarily limited to the relative positional relationship of the second conducting ring, the specific structure of elastic device
The description above, as long as elastic device connects the first conducting ring and the second conducting ring to realize the first conducting ring and second
Direction relative motion of the edge of conducting ring perpendicular to supporting surface.
The embodiment of the present disclosure also provides a kind of Pvd equipment comprising any of the above-described kind of chamber.
For example, the Pvd equipment can set for sputtering equipment, magnetron sputtering apparatus, arc plasma deposition
It is standby etc..
Pvd equipment provided in this embodiment including above-mentioned chamber can preferably adjust the uniform of film
Property and the important parameters such as process deposition rate, increase process window, avoid in debugging process and when maloperation
Injury device main body hardware.In addition, the additional various sizes of ground loop of production is not needed when carrying out the adjustment of target base spacing,
And without destroying vacuum environment, thus reduce costs.
There is the following to need to illustrate:
(1) present invention discloses in embodiment attached drawing, relates only to the structure being related to the embodiment of the present disclosure, other structures
It can refer to and be commonly designed.
(2) in the absence of conflict, the feature that the present invention discloses in the same embodiment and different embodiments can be mutual
Combination.
The above is only exemplary embodiment of the invention, protection scope and is not intended to limit the present invention, this hair
Bright protection scope is determined by the attached claims.
Claims (17)
1. a kind of ground loop, comprising:
First conducting ring, the second conducting ring and the multiple elasticity for being electrically connected first conducting ring and second conducting ring
Device,
Wherein, the second centerline axis parallel of the first central axis of first conducting ring and second conducting ring or again
It closes, the multiple elastic device is configured such that first conducting ring and second conducting ring can be along first centers
The direction relative motion of axis.
2. ground loop according to claim 1, wherein along the direction of first central axis, first conducting ring
It is 1-30mm at a distance from can be movable relatively between second conducting ring.
3. ground loop according to claim 1, wherein each of the multiple elastic device includes:
Connecting rod is configured as limiting the direction of relative movement of first conducting ring and second conducting ring as along described
The direction of one central axis；And
The elastomeric element being set in the connecting rod, the elastomeric element are configured as by the way that deformation occurs so that described first
The direction relative motion of conducting ring and second conducting ring along first central axis.
4. ground loop according to claim 3, wherein one end of the elastomeric element and first conducting ring are opposite solid
Fixed, the other end of the elastomeric element and second conducting ring are relatively fixed.
5. ground loop according to claim 3 or 4, wherein first conducting ring and second conducting ring are at least
One of the junction of the elastic device be provided with first lure electric coil, led with enhancing first conducting ring and described second
Electric conductivity between at least one of electric ring and the elastic device.
6. ground loop according to claim 3 or 4, wherein week of the multiple elastic device along first conducting ring
To being uniformly distributed.
7. ground loop according to claim 3 or 4, wherein the quantity of the multiple elastic device is no less than 8.
8. ground loop according to claim 3 or 4, wherein along the direction of first central axis, described first is conductive
Ring and the second conductive loop section are overlapping, and the elastomeric element is located at the friendship of first conducting ring and second conducting ring
Between folded part.
9. ground loop according to claim 3 or 4, wherein it is conductive that the internal diameter of first conducting ring is less than described second
The internal diameter of ring, first conducting ring include first annular side wall, diameter of the first annular side wall in first conducting ring
Section on direction extends along the direction of first central axis, and the medial end of second conducting ring is along described the
The distance between the radial direction of one conducting ring and the first annular side wall are no more than 5mm.
10. ground loop according to claim 3 or 4, wherein it is conductive that the internal diameter of first conducting ring is less than described second
The internal diameter of ring, second conducting ring include the second annular sidewall, diameter of second annular sidewall in second conducting ring
Section on direction extends along the direction of second central axis, and the outboard end of first conducting ring is along described the
The distance between the radial direction of two conducting rings and second annular sidewall are no more than 5mm.
11. a kind of chamber, comprising:
Cavity；
Shielding part is connect with the inner wall of the cavity；
Pedestal including conductive shell and is used to support the supporting surface of workpiece to be processed；And
The described in any item ground loops of claim 1-10,
Wherein, perpendicular to first central axis, first conducting ring is connected on the shell supporting surface, described
Second conducting ring is configured as abutting on the shielding part.
12. chamber according to claim 11, wherein the elastic device makes described when being configured in deformed state
Second conducting ring keeps the state being connected on the shielding part.
13. chamber according to claim 11, wherein the junction of first conducting ring and the shell of the pedestal is set
It is equipped with second and lures electric coil to increase the electric conductivity between first conducting ring and the shell of the pedestal.
14. chamber according to claim 11, wherein along the radial direction of first conducting ring, described first is conductive
Ring is no more than 5mm close to the distance between the end of the shielding part and the shielding part.
15. the described in any item chambers of 1-14 according to claim 1, wherein second conducting ring includes elastic electrical connector,
Second conducting ring is connected on the shielding part by the elastic electrical connector.
16. the described in any item chambers of 1-14 according to claim 1, wherein the shell of the pedestal, the ground loop and institute
Shielding part is stated to be configured as being grounded.
17. a kind of Pvd equipment, including the described in any item chambers of claim 11-16.
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| TWI767874B (en) * | 2020-12-22 | 2022-06-11 | 大陸商北京北方華創微電子裝備有限公司 | Magnetron Sputtering Equipment |
| WO2022135366A1 (en) * | 2020-12-22 | 2022-06-30 | 北京北方华创微电子装备有限公司 | Magnetron sputtering device |
| KR20230113597A (en) * | 2020-12-22 | 2023-07-31 | 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. | Magnetron Sputtering Equipment |
| KR102620632B1 (en) * | 2020-12-22 | 2024-01-03 | 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. | Magnetron Sputtering Equipment |
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| CN110396664B (en) | 2020-10-13 |
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