CN110391591A - Integrated waveform variable pulse source and operating method - Google Patents
Integrated waveform variable pulse source and operating method Download PDFInfo
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- CN110391591A CN110391591A CN201910686766.2A CN201910686766A CN110391591A CN 110391591 A CN110391591 A CN 110391591A CN 201910686766 A CN201910686766 A CN 201910686766A CN 110391591 A CN110391591 A CN 110391591A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0121—Operation of devices; Circuit arrangements, not otherwise provided for in this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
A kind of integrated waveform variable pulse source and operating method, device includes silicon-based substrates and control module, tunable laser is prepared in the silicon-based substrates, first connection waveguide, double parallel intensity modulator, output waveguide, laser electrical interface, double parallel intensity modulator electrical interface, laser outbound course along the tunable laser is successively the first connection waveguide, double parallel intensity modulator and output waveguide, the control module passes through laser electrical interface respectively and is connected with the tunable laser, it is connected by double parallel intensity modulator electrical interface with double parallel intensity modulator.The present invention can generate a variety of time domain impulses such as triangular wave, square wave, Gaussian pulse, half cosine impulse, square-topped pulse, and repetition rate has the characteristics that central wavelength is adjustable, supports multi-wavelength work, time jitter low between 1GHz-30GHz.
Description
Technical field
The present invention relates to waveform variable pulse source, especially a kind of integrated waveform variable pulse generating device and operation side
Method.
Background technique
Microwave variable pulse source is including radar system, RF communication system, the numerous areas such as full light microwave signal process
It has a wide range of applications.Traditional microwave waveform variable pulse be generated by electronic device, and the low frequency of electronic device,
Small band width limits the repetition rate of waveform variable pulse generation.Optical waveform variable pulse can produce high repetition frequency
Waveform, and have wider frequency spectrum opereating specification, do not influenced by electromagnetic interference, can be with existing fibre-optic transmission system (FOTS) phase
Hold.Integrated waveform variable pulse source is also equipped with the advantages such as size is small, low energy consumption on the basis of waveform variable pulse occurs.
The scheme in reported optical waveform variable pulse source mainly include the following types:
Method 1: it is mapped based on frequency-time.Using mode-locked laser as light source, it is whole that ultrashort light pulse sequence is subjected to spectrum
After shape, frequency-time mapping is carried out by dispersive optical fiber and photodetector.By changing light spectrum shaping device, which can
Multiple waveforms are generated, but its repetition rate is limited (usually nanosecond rank), and since the technology needs big chromatic dispersion quantity,
Loss is big and system bulk is big, and hardly possible is integrated.
Method 2: it is based on Fourier's synthetic method.The input signal of this method is ultrashort pulse sequence, passes through Dispersive Devices
Each frequency comb is separated afterwards, the latter modulation array the amplitude and phase of each frequency component are modulated, finally with one
Reverse dispersion device gets up each frequency component combination, realizes that waveform variable pulse occurs.This method can use discrete device reality
It is existing, obtain frequency resolution, bandwidth, modulation rate preferable waveform variable pulse source, but experimental implementation difficulty it is big, to surrounding
Environment sensitive, and it is bulky, and power consumption is big.The program can also be realized with integrated device, but it is difficult to collect divider part technique
Degree is big, and frequency dividing device has larger impact to the loss of the quality and integrated device that generate waveform.Existing scheme is mostly indium phosphide
Integrated, size is larger and cannot be compatible with CMOS.
Method 3: it is based on time history synthesis method.The input signal of this method is ultrashort pulse sequence, ultrashort pulse sequence quilt
Respectively to after multichannel, respectively by amplitude modulation and phase-modulation, using combining after different delays.For more multiple
Miscellaneous waveform, device needs multiple-channel output, complex.
In short, above several method or being difficult to integrated alternatively, needing a kind of high performance integrated waveform variable pulse
Source scheme can take into account weight simple process, easily operated, waveform is had excellent performance.
Summary of the invention
The technical problem to be solved by the present invention is to overcome above-mentioned the deficiencies in the prior art, it is variable to provide a kind of integrated waveform
Clock and operating method, the device can generate triangular wave, square wave, Gaussian pulse, half cosine impulse, square-topped pulse etc. it is a variety of when
Domain pulse, repetition rate have adjustable central wavelength, the work of support multi-wavelength, time jitter low between 1GHz-30GHz
Feature.
To solve the above-mentioned problems, technical solution of the invention is as follows:
A kind of integrated waveform variable pulse source, it is characterized in that including silicon-based substrates and control module, in the silicon substrate
Tunable laser, the first connection waveguide, double parallel intensity modulator, output waveguide, laser electrical interface, double is prepared on substrate
Parallel intensity modulator electrical interface, the laser outbound course along the tunable laser are successively the first connection waves
Lead, double parallel intensity modulator and output waveguide, the control module pass through respectively laser electrical interface and it is described can
Adjusting laser is connected, and is connected by double parallel intensity modulator electrical interface with double parallel intensity modulator；
The double parallel intensity modulator includes upper and lower two-arm, and the both ends of the two-arm are by the first multimode interference and
Two multimode interferences connection composition, upper arm is by the second connection waveguide, the first intensity modulator, third connection waveguide, the successively
One phase shifter and the 4th connection waveguide composition；Lower arm is by the 5th connection waveguide, the second intensity modulator and the 6th connection successively
Waveguide composition；
First intensity modulator also includes upper and lower two-arm, and the both ends of the two-arm are by third multimode interference and
Four multimode interferences connection composition, upper arm is by the 7th connection waveguide, the first PN junction, the 8th connection waveguide, the second phase shift successively
Device, the 9th connection waveguide composition, lower arm by the tenth connection waveguide, the second PN junction device, the 11st connection waveguide, third phase shifter and
11st connection waveguide composition；
The structure of second intensity modulator is identical as the structure of the first intensity modulator, comprising upper and lower
The both ends of two-arm, the two-arm are made of the 5th multimode interference and the connection of the 6th multimode interference, and upper arm is by the 13rd successively
Waveguide, the first PN junction, the 14th connection waveguide, the second phase shifter, the 15th connection waveguide composition are connected, lower arm is connected by the 16th
Connect waveguide, the second PN junction device, the 17th connection waveguide, third phase shifter and the 18th connection waveguide composition；
The double parallel intensity modulator electrical interface is respectively the first PN junction, the second PN junction, third PN junction, the 4th PN
Knot, the first phase shifter, the second phase shifter, third phase shifter, the 4th phase shifter and the power supply of the 5th phase shifter.
The silicon-based substrates include three layers, are successively from bottom to top silicon layer, silicon dioxide layer and monocrystalline silicon layer, bottom is
Certain thickness silicon layer plays a supportive role, and middle layer is silicon dioxide layer, and with a thickness of several microns, top layer is monocrystalline silicon layer,
With a thickness of 200-250nm.
The tunable laser is the integration laser based on Group III-V semiconductor, the tune of the output wavelength of laser
Adjusting range is 1520-1600nm.
The tunable laser is the integration laser based on Group III-V semiconductor, can pass through the work of hybrid integrated
Skill is directly prepared in silicon-based substrates, can also first it is independently prepared, then by way of bonding with silicon-based substrates and subsequent device
Part connection.Laser has adjustable output wavelength.
First connection waveguide, double parallel intensity modulator, output waveguide and the double parallel intensity modulator electricity connects
Mouth is all through the preparation of semiconductor CMOS standard technology in the silicon-based substrates.
The control module can be individual IC chip, be also possible to the circuit that discrete electronic device is constituted
Module.
Tunable laser, the first connection waveguide, double parallel intensity modulator and the output waveguide works in single mode
Transverse electric (TE) mode, or all work in singlemode transverse magnetism (TM) mode.
The first intensity modulator and the second intensity modulator of the double parallel intensity modulator are not two silicon substrate horses
Conspicuous Zeng Deer modulator.
The output waveguide is the drawing cone waveguide or other structures that straight wave guide, width are gradually reduced.
Using the operating method in above-mentioned integrated waveform variable pulse source, method includes the following steps:
1) control module described in is according to applying required waveform, central wavelength, by the electrical interface of tunable laser,
Control the output power and central wavelength of tunable laser；
2) repetition rate that the control module described in occurs according to the required waveform variable pulse of application is strong by double parallel
Spend the electrical interface of modulator, input high-frequency signal and DC offset voltage, it is ensured that the two-arm of input double parallel intensity modulator
High-frequency signal be no more than modulator bandwidth of operation, two-way high-frequency signal frequency is equal, and the two phase difference keeps constant pass
System, the DC offset voltage for inputting the first intensity modulator and the second intensity modulator make modulator work in linear modulator zone
Domain；
3) amplitude for adjusting the high-frequency signal of first intensity modulator and the second intensity modulator, so that optical signal
After two modulators, the different each rank sideband of power is generated in the two sides of central wavelength；
4) phase relation for adjusting the high-frequency signal of first intensity modulator and the second intensity modulator, make by
Optical signal after first intensity modulator and the second intensity modulator shows as required waveform in the time domain；
5) control module described in inputs the high-frequency signal of the first intensity modulator and the second intensity modulator by changing
Frequency, and ensure that frequency between the two is equal and phase relation determines, with the periodic waveform of time domain required for obtaining
Variable pulse sequence, the adjustable range of pulse train repetition rate be modulator allow input modulated signal low-limit frequency extremely
Highest frequency.
The noise of the pulse train of the generation determines by the noise for applying modulated signal on the modulator, therefore can
To obtain the pulse train of low time jitter by using reduced noise modulation signal.
Compared with prior art, the present invention has the advantage that
The present invention integrate waveform variable pulse source realize repetition rate 1GHz-30GHz is adjustable, central wavelength is adjustable,
The Pulse-width modulation source of low time jitter.Compared to the method 1 (being based on frequency-time mapping method) in background technique, the present invention
Big chromatic dispersion quantity is not needed, is easily integrated, and can produce the pulse of more small pulsewidth.It (is based on compared to the method 2 in background technique
Fourier synthetic method), the present invention can be more stable, is easily integrated, pulse behaviors are good and compatible with CMOS.It compares and background technique
In method 3 (be based on time history synthesis pulse method), it is simpler in structure when the present invention generates complicated time domain waveform.
Apparatus of the present invention can generate the waveform variable pulse in time domain, and (such as sinc type nyquist pulse, triangular pulse are high
This pulse etc.), repetition rate has adjustable central wavelength, the work of support multi-wavelength, time jitter low between 1GHz-30GHz
The characteristics of.
Detailed description of the invention
Fig. 1 is the structure chart in the integrated waveform variable pulse source of the present invention
In figure: 1- silicon-based substrates, 2- tunable laser, the connection waveguide of 3- first, 4- double parallel intensity modulator, 5- output
Waveguide, 6- laser electrical interface, 7- double-parallel modulator electrical interface, 8- control module.
Fig. 2 is the structure chart of double parallel intensity modulator 4 in Fig. 1.
In figure: the first multimode interference of 401-, the connection waveguide of 402- second, the first intensity modulator of 403-, 404- third
Connection waveguide, the first phase shifter of 405-, the connection waveguide of 406- the 4th, the connection waveguide of 407- the 5th, the second intensity modulator of 408-,
The connection waveguide of 409- the 6th, the second multimode interference of 410-.
Fig. 3 is 403 structure chart of the first intensity modulator in Fig. 2.
In figure: 301- third multimode interference, the connection waveguide of 302- the 7th, the first PN junction of 303-, the connection wave of 304- the 8th
It leads, the first phase shifter of 305-, the connection waveguide of 306- the 9th, the connection waveguide of 307- the tenth, the second PN junction of 308-, 309- the 11st
Connect waveguide, the second phase shifter of 310-, the connection waveguide of 311- the 12nd, the 4th multimode interference of 312-.
Fig. 4 is the sinc type nyquist pulse of the output of double-parallel modulator 4,
Fig. 5 is the triangular pulse of the output of double-parallel modulator 4,
Fig. 6 is the Gaussian pulse of the output of double-parallel modulator 4.
Specific embodiment
Present invention will be further explained below with reference to the attached drawings and examples, but protection model of the invention should not be limited with this
It encloses.
Fig. 1 is the structure chart in the integrated waveform variable pulse source of the present invention, as seen from the figure, this integrated waveform variable pulse source packet
Include silicon-based substrates 1, tunable laser 2, first connects waveguide 3, double parallel intensity modulator 4, output waveguide 5, laser electrical
Interface 6, double-parallel modulator electrical interface 7 and control module 8.Specific structure is along 2 outbound course of laser, and optical signal is successively
By the first connection waveguide 3, double parallel intensity modulator 4 and output waveguide 5.Control module 14 passes through laser electrical interface 6
It is connected with tunable laser 2, driving is carried out to laser and wavelength regulation controls.Control module 8 passes through double-parallel modulator
Electrical interface 7 and double parallel intensity modulator 4 carry out high-frequency signal input to modulator and direct current biasings inputs and control.
Fig. 2 is the structure chart of double-parallel modulator 4 in Fig. 1, and as seen from the figure, double-parallel modulator 4 is dry including the first multimode
Relating to device 401, the second connection waveguide 402, the first intensity modulator 403, third connects waveguide 404, the first phase shifter 405, and the 4th
Waveguide 406 is connected, the 5th connects waveguide 407, the second intensity modulator 408, the 6th connection waveguide 409, the second multimode interference
410.Optical signal is divided into identical two parts by the first multimode interference 401, respectively along the upper of double-parallel modulator
Arm and lower arm conduction.Optical signal successively passes through the second connection waveguide 402, the first intensity modulator 403 in upper arm, and third connects wave
404 are led, the first phase shifter 405 and the 4th connects waveguide 406.Optical signal lower arm successively pass through the 5th connection waveguide 407, second
Intensity modulator 408 and the 6th connection waveguide 409.Two ways of optical signals is reconfigured by the second multimode interference 410.
Fig. 3 is the structure chart of the first intensity modulator 403 in Fig. 2, and as seen from the figure, the first intensity modulator 403 includes the
Three multimode interferences 301, the 7th connection waveguide 302, the first PN junction 303, the 8th connection waveguide 304, the first phase shifter 305, the
Nine connection waveguides 306, the tenth connection waveguide 307, the connection waveguide 309 of the second PN junction the 308, the 11st, the second phase shifter 310, the
12 connection waveguides 311, the 4th multimode interference 312.Optical signal is divided into identical by third multimode interference 301
Two parts are conducted along the upper and lower arms of double-parallel modulator respectively.Optical signal successively passes through the 7th connection waveguide in upper arm
302, the first PN junction 303, the 8th connects waveguide 304, the first phase shifter 305 and the 9th connection waveguide 306.Optical signal lower arm according to
Secondary to connect waveguide 307 by the tenth, the second PN junction the 308, the 11st connects waveguide 309, the connection of the second phase shifter 310 and the 12nd
Waveguide 311.Two ways of optical signals is reconfigured by the 4th multimode interference 312.
The bottom of the silicon-based substrates 1 is that certain thickness silicon plays a supportive role, and centre is silica, with a thickness of several
A micron, top layer is monocrystalline silicon, with a thickness of 200-250nm.
Preferred embodiment, the thickness of bottom silicon are 625 microns, and the thickness of intermediate silica is 3 microns, upper layer monocrystalline silicon
Thickness be 220nm.
First connection waveguide 3, double-parallel modulator 4 and the output waveguide 5 is prepared by standard CMOS process
In silicon-based substrates 1.
The tunable laser 2 is the integration laser based on Group III-V semiconductor, can pass through the work of hybrid integrated
Skill is directly prepared in silicon-based substrates, can also first it is independently prepared, then by way of bonding with silicon-based substrates and subsequent device
Part connection.Laser has adjustable output wavelength.
Preferably, the adjustable range of the output wavelength of laser is in 1520-1600nm.
The tunable laser 2, first connects waveguide 3, double-parallel modulator 4 and output waveguide 5 and works in single mode
Mode can all work in single mode transverse electric (TE) mode, or all work in singlemode transverse magnetism (TM) mode.The operating wave appearance of device
Mutually matching.
Preferably, above-mentioned device all works in single mode TE mode.The sectional dimension for connecting waveguide is 400nm x 220nm.
First intensity modulator and the second intensity modulator is silicon substrate MZ Mach-Zehnder, utilizes carrier
Effect of dispersion realizes Electro-optical Modulation, and uses traveling wave electrode to guarantee the efficient modulation of broadband high-frequency signals.
Preferably, modulator work is in push-pull mode, so that the high-frequency modulation signal of single ended input can produce in two-arm
Raw complementary driving signal.
The output waveguide 5 can be straight wave guide according to backend application demand, be also possible to the drawing that width is gradually reduced
Bore waveguide or other structures.
The operating method of above-mentioned frequency comb and pulse source generating device, comprising the following steps:
1) control module 8 passes through the electrical interface 6 of tunable laser 2, control according to required clock central wavelength is applied
The output power and central wavelength of tunable laser 2 processed；
2) control module 8 passes through the electrical interface 7 of double-parallel modulator 4 according to required clock repetition rate is applied
Input high-frequency signal and DC offset voltage.It is no more than the work belt of modulator to the high-frequency signal of two intensity modulators input
Width, two-way high-frequency signal frequency are identical.Modulator is set to work linear the DC offset voltage of two intensity modulators input
Modulation areas.
3) amplitude of the high-frequency signal of above-mentioned two modulators of input is adjusted, so that optical signal is after two modulators,
Each rank sideband is generated in central wavelength；
4) phase relation for adjusting above-mentioned two-way high-frequency signal, so that the optical signal after two modulators is in the time domain
Show as required pulse shape.
5) control module 8, can be corresponding by the frequency of the high-frequency signal of change input double parallel intensity modulator in Fig. 1
Change the repetition rate of time-domain pulse train, the adjustable range of pulse train repetition rate is the modulation letter that modulator allows to input
Number low-limit frequency to highest frequency.
In the preferred embodiment of the present invention, the output wavelength of tunable laser 2 is 1550.0nm, and control module 8 is applied to
Signal frequency in double parallel intensity modulator 4 is 10.0GHz.
Fig. 4 gives in above preferred embodiment, the sinc type Nyquist arteries and veins of the output of double-parallel modulator 4 in Fig. 1
The emulation time domain waveform of punching.As can be seen from Figure, pulse period 100.0ps, corresponding to the repetition rate of 10.0GHz, arteries and veins
Rushing width is 17.8ps.
Fig. 5 gives the emulation time domain waveform of the triangular pulse of the output of double-parallel modulator 4 in above preferred embodiment.
Pulse period is 100.0ps, corresponding to the repetition rate of 10.0GHz, pulse width 50ps.
Fig. 6 gives the emulation time domain waveform of the Gaussian pulse of the output of double-parallel modulator 4 in above preferred embodiment.
Pulse period is 100.0ps, corresponding to the repetition rate of 10.0GHz, pulse width 26.4ps.
Experiment show the present invention can generate triangular wave, square wave, Gaussian pulse, half cosine impulse, square-topped pulse etc. it is a variety of when
Domain pulse, repetition rate have adjustable central wavelength, the work of support multi-wavelength, time jitter low between 1GHz-30GHz
Feature.
Claims (11)
1. a kind of integrated waveform variable pulse source, it is characterised in that including silicon-based substrates and control module, in the silicon substrate base
On piece prepares tunable laser, the first connection waveguide, double parallel intensity modulator, output waveguide, laser electrical interface, double flat
Row intensity modulator electrical interface, the laser outbound course along the tunable laser are successively the first connection waves
Lead, double parallel intensity modulator and output waveguide, the control module pass through respectively laser electrical interface and it is described can
Adjusting laser is connected, and is connected by double parallel intensity modulator electrical interface with double parallel intensity modulator；
The double parallel intensity modulator includes upper and lower two-arm, and the both ends of the two-arm are by more than the first multimode interference and second
Mode interference device connection composition, upper arm is by the second connection waveguide, the first intensity modulator, third connection waveguide, the first shifting successively
Phase device and the 4th connection waveguide composition；Lower arm is by the 5th connection waveguide, the second intensity modulator and the 6th connection waveguide successively
Composition；
First intensity modulator also includes upper and lower two-arm, and the both ends of the two-arm are by more than third multimode interference and the 4th
Mode interference device connection composition, upper arm is by the 7th connection waveguide, the first PN junction, the 8th connection waveguide, the second phase shifter, the successively
Nine connection waveguide compositions, lower arm is by the tenth connection waveguide, the second PN junction device, the 11st connection waveguide, third phase shifter and the tenth
One connection waveguide composition；
The structure of second intensity modulator is identical as the structure of the first intensity modulator, includes upper and lower two-arm,
The both ends of the two-arm are made of the 5th multimode interference and the connection of the 6th multimode interference, and upper arm is by the 13rd connection wave successively
It leads, the first PN junction, the 14th connection waveguide, the second phase shifter, the 15th connection waveguide composition, lower arm is by the 16th connection wave
Lead, the second PN junction device, the 17th connection waveguide, third phase shifter and the 18th connection waveguide composition；
The double parallel intensity modulator electrical interface be respectively the first PN junction, the second PN junction, third PN junction, the 4th PN junction,
First phase shifter, the second phase shifter, third phase shifter, the 4th phase shifter and the power supply of the 5th phase shifter.
2. integrated waveform variable pulse source according to claim 1, it is characterised in that the silicon-based substrates include three layers,
It is successively from bottom to top silicon layer, silicon dioxide layer and monocrystalline silicon layer, bottom is that certain thickness silicon layer plays a supportive role, middle layer
It is silicon dioxide layer, with a thickness of several microns, top layer is monocrystalline silicon layer, with a thickness of 200-250nm.
3. integrated waveform variable pulse source according to claim 1, it is characterised in that the tunable laser is to be based on
The integration laser of Group III-V semiconductor, the adjustable range of the output wavelength of laser are 1520-1600 nm.
4. integrated waveform variable pulse source according to claim 1, it is characterised in that the tunable laser is to be based on
The integration laser of Group III-V semiconductor can directly be prepared in silicon-based substrates by the technique of hybrid integrated, can also be first
It is independently prepared, then it is connect by way of bonding with silicon-based substrates and subsequent device.Laser has adjustable output wave
It is long.
5. integrated waveform variable pulse source according to claim 1, it is characterised in that the first connection waveguide, double flat
Row intensity modulator, output waveguide and double parallel intensity modulator electrical interface all pass through the preparation of semiconductor CMOS standard technology and exist
In the silicon-based substrates.
6. integrated waveform variable pulse source according to claim 1, it is characterised in that the control module can be list
Only IC chip is also possible to the circuit module that discrete electronic device is constituted.
7. integrated waveform variable pulse source according to claim 1, it is characterised in that the tunable laser, first connect
It connects waveguide, double parallel intensity modulator and output waveguide to work in single mode transverse electric (TE) mode, or all works in singlemode transverse magnetism
(TM) mode.
8. integrated waveform variable pulse source according to claim 1, it is characterised in that the double parallel intensity modulator
The first intensity modulator and the second intensity modulator be not two silicon substrate MZ Mach-Zehnders.
9. integrated waveform variable pulse source according to any one of claims 1 to 8, it is characterised in that the output waveguide
It is the drawing cone waveguide or other structures that straight wave guide, width are gradually reduced.
10. utilizing the operating method in integrated waveform variable pulse source according to claim 1, it is characterised in that this method packet
Include following steps:
1) control module described in passes through the electrical interface of tunable laser, control according to required waveform, central wavelength is applied
The output power and central wavelength of tunable laser；
2) repetition rate that the control module described in occurs according to the required waveform variable pulse of application, passes through double parallel intensity tune
The electrical interface of device processed, input high-frequency signal and DC offset voltage, it is ensured that the height of the two-arm of input double parallel intensity modulator
Frequency signal is no more than the bandwidth of operation of modulator, and two-way high-frequency signal frequency is equal, and the two phase difference keeps constant relationship, defeated
The DC offset voltage for entering the first intensity modulator and the second intensity modulator makes modulator work in linear modulation areas；
3) amplitude of the high-frequency signal of first intensity modulator and the second intensity modulator is adjusted, so that optical signal passes through
After two modulators, the different each rank sideband of power is generated in the two sides of central wavelength；
4) phase relation for adjusting the high-frequency signal of first intensity modulator and the second intensity modulator, makes by first
Optical signal after intensity modulator and the second intensity modulator shows as required waveform in the time domain；
5) control module described in inputs the frequency of the high-frequency signal of the first intensity modulator and the second intensity modulator by changing
Rate, and ensure that frequency between the two is equal determining with phase relation, it is variable with the periodic waveform for obtaining required time domain
Pulse train, the adjustable range of pulse train repetition rate are that modulator allows the low-limit frequency of the modulated signal inputted to highest
Frequency.
11. operating method according to claim 10, it is characterised in that the noise of the pulse train of the generation is by applying
The noise of modulated signal on the modulator is added to determine, therefore can obtain the low time by using reduced noise modulation signal to tremble
Dynamic pulse train.
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| CN114188817A (en) * | 2021-12-06 | 2022-03-15 | 中国电子科技集团公司第十三研究所 | Microwave photon integrated direct modulation laser chip circuit and laser |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114188817A (en) * | 2021-12-06 | 2022-03-15 | 中国电子科技集团公司第十三研究所 | Microwave photon integrated direct modulation laser chip circuit and laser |
| CN114188817B (en) * | 2021-12-06 | 2024-01-30 | 中国电子科技集团公司第十三研究所 | Microwave photon integrated direct-tuning laser chip circuit and laser |
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