CN110391318B - P-type single crystal PERC battery and manufacturing method thereof - Google Patents
P-type single crystal PERC battery and manufacturing method thereof Download PDFInfo
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Abstract
The invention provides a P-type single crystal PERC battery and a manufacturing method thereof, comprising the following steps: step S1, surface texturing; step S2, high-temperature phosphorus diffusion; step S3, peripheral etching and back polishing; step S4, preparing a back aluminum oxide layer; step S5, preparing a silicon dioxide layer; step S6, preparing a silicon oxynitride layer; step S7, back laser grooving; step S8, front and back electrode preparation. On the premise of ensuring the passivation effect, the invention reduces the hydrogen source sources by changing the structure of the battery film layer, the manufacturing raw materials and the corresponding process optimization method, reduces redundant hydrogen atoms in the solar cell piece and achieves the technical effect of improving the LeTID of the solar cell.
Description
Technical Field
The invention relates to a solar cell and a manufacturing method thereof, in particular to a P-type single crystal PERC cell and a manufacturing method thereof, and belongs to the technical field of solar cell production and manufacturing.
Background
In recent years, the mainstream product in the photovoltaic industry is a boron-doped P-type single crystal PERC (Passivated emitter and reactor Cell, also called Passivated emitter and back Cell) solar Cell, but the mainstream product has different degrees of Light Induced Degradation (LID) and Light and heat Induced Degradation (LeTID) phenomena. The light-induced attenuation and the light-heat attenuation mean that under certain high temperature and illumination conditions, the PERC battery has an obvious efficiency attenuation phenomenon, and the generated energy of the solar battery is seriously influenced. Currently, the LID of the PERC battery is improved mainly by various process optimization methods in the industry; however, the method for improving and optimizing the LeTID is few, so that the LeTID in the boron-doped P-type PERC solar cell can exceed about 10% in some cases, and the development of the P-type single-crystal PERC cell is severely restricted.
The general theory holds that the photothermal attenuation is mainly caused by the combination of several factors such as redundant hydrogen atoms, silicon chip defects, metal impurities and the like in the cell, wherein the redundant hydrogen atoms in the cell are the most important factors. The more hydrogen excess, the more severe the decay, resulting in reduced cell and module efficiency. To ameliorate this problem, there are two current directions of research: one is to adopt a low-defect high-quality silicon chip, but the manufacturing cost is greatly increased, which does not meet the development trend of cost reduction and efficiency improvement in the photovoltaic industry; the other method is to reduce the hydrogen content in the cell as much as possible, but the hydrogen content cannot be reduced in the existing cell manufacturing process, because a large amount of hydrogen sources are introduced when a front-surface SiNx thin film is deposited by a PECVD method and an AlOx/SiNx laminated film is deposited on the back surface, and finally redundant hydrogen atoms appear in the cell, so that a serious LeTID phenomenon is generated.
Disclosure of Invention
Aiming at the defects or improvement requirements in the prior art, the invention provides a P-type single crystal PERC cell and a manufacturing method thereof, which mainly reduce hydrogen source sources and reduce redundant hydrogen atoms in a solar cell piece by changing a cell film layer structure, manufacturing raw materials and a corresponding process optimization method on the premise of ensuring the passivation effect, thereby achieving the technical effect of improving the LeTID of the solar cell.
In order to achieve the purpose, the invention adopts the following technical scheme:
according to one aspect of the present invention, there is provided a method for manufacturing a P-type single crystal PERC cell, comprising the steps of:
step S1, surface texturing: forming a pyramid-shaped surface morphology on the surface of the P-type silicon wafer by using the anisotropic corrosion characteristic that a low-concentration alkali solution has different corrosion rates on the silicon wafer in different crystal orientations, wherein the reaction alkali solution: 1.0-1.5 wt% NaOH, reaction time: 200 and 400s, temperature: 70-90 ℃, reflectance: 11 to 12 percent;
step S2, high temperature phosphorus diffusion: introducing phosphorus oxychloride as a diffusion source into a high-temperature diffusion furnace through a constant-temperature liquid source bottle by using nitrogen, introducing sufficient oxygen, and diffusing phosphorus atoms after reaction into a P-type silicon wafer to form N-type impurity distribution to obtain a PN junction, wherein the nitrogen flow rate is as follows: 500-800sccm, oxygen flow: 600-1000sccm, reaction time: 80-100min, temperature: 700 ℃ and 800 ℃, diffusion sheet resistance: 110-: 90-100 omega/□;
step S3, periphery etching and back polishing: corroding the back and the edge of the diffused silicon wafer by using HF acid liquor, removing N-type silicon at the edge, so that the front surface and the back surface of the silicon wafer are mutually insulated, polishing the back of the silicon wafer by using KOH and a polishing additive, wherein the reflectivity of the back is as follows: 40-45%;
step S4, back side alumina layer preparation: use the thick liquids mixer with alumina thick liquids intensive mixing even, adopt the screen printing mode again with alumina thick liquids printing at the back, wherein, printing pressure: 50-80N, printing speed: 300-400mm/s, plate spacing: 0.5-1.5mm, drying condition: 280 ℃ and 350 ℃ for 5-10 min;
step S5, preparation of a silica layer: depositing a layer of silicon dioxide film on the front surface and the back surface by adopting a thermal oxidation method, wherein the oxygen flow rate is as follows: 1000-: 100-300pa, thermal oxidation temperature: 600 ℃ and 700 ℃, time: 10-30 min;
step S6, preparing a silicon oxynitride layer: depositing silicon oxynitride films on the front surface and the back surface respectively by using a PECVD method, wherein the preparation conditions of the front silicon oxynitride layer of at least one layer of film structure are as follows: deposition temperature: 450 ℃ and 550 ℃, N2O flow rate: 200-800sccm, pressure: 1500-: 500-700 s; the preparation conditions of the back silicon oxynitride layer are as follows: deposition temperature: 500 ℃ C and 550 ℃ C, N2O flow rate: 500-: 1500-: 350-600 s;
step S7, back laser grooving: local grooving of the back laminated passivation film is carried out by utilizing a laser fusion principle, and the parameters of a back laser graph are as follows: the diameter of the light spot: 20-50 μm, laser line spacing: 500-900 μm;
step S8, front and back electrode preparation: and preparing front and back electrodes by a screen printing method, collecting current, and sintering to obtain the P-type single crystal PERC cell.
Further, according to the manufacturing method of the present invention, in step S6, the front surface silicon oxynitride layer has a three-layer film structure, wherein the first layer film is a first layer film contacting the silicon wafer substrate, and the thickness of the first layer film is: 35-45nm, refractive index: 2.15-2.25; the thickness of the second layer: 20-30nm, refractive index: 2.05-2.15; the thickness of the third layer is as follows: 10-15 nm; refractive index: 1.90-2.00.
Further, according to the manufacturing method of the present invention, before step S5, the method further includes the following steps: and (3) carrying out high-temperature annealing treatment on the aluminum oxide layer prepared in the step S4 under an inert atmosphere, wherein the annealing temperature is as follows: 550 ℃ and 600 ℃, annealing time: 10-20 min.
Further, according to the manufacturing method of the present invention, the thickness of the back side alumina layer prepared in step S4 is 100-150 nm.
Further, according to the manufacturing method of the present invention, the thickness of the silicon dioxide layer prepared in step S5 is 2 to 5 nm.
Further, according to the manufacturing method of the present invention, the front-side silicon oxynitride layer prepared in step S6 has a thickness of 75 to 80nm and a refractive index of 2.05 to 2.15.
Further, according to the manufacturing method of the present invention, the back silicon oxynitride layer prepared in step S6 has a thickness of 60 to 70nm and a refractive index of 2.05 to 2.10.
According to another aspect of the invention, a P-type single crystal PERC cell is provided, fabricated using the fabrication method described above.
Compared with the prior art, the P-type single crystal PERC battery prepared by the preparation method has the following beneficial effects:
1. the front surface adopts a silicon dioxide/silicon oxynitride film layer structure, non-hydrogen source reaction gas is added, and the use amount of hydrogen-containing source gas is reduced, so that redundant hydrogen atoms in the battery piece are reduced, and the effect of improving the cell piece LeTID phenomenon is achieved;
2. the refractive index of the silicon dioxide/silicon oxynitride film layer on the front surface can be regulated, more incident light can be absorbed, photo-generated carriers are increased, and the short-circuit current of the battery is improved;
3. the aluminum oxide film layer on the back is prepared in a screen printing mode, a reaction material containing a hydrogen source is not used at all, redundant hydrogen atoms in the battery piece are greatly reduced, and the LeTID phenomenon of the battery piece is further improved;
4. the screen printing alumina film can be compatible with the screen printing equipment of the original production line, no additional equipment is needed, the cost of the alumina slurry is far lower than that of reaction gas of a PECVD/ALD method, and the total manufacturing cost of the cell is greatly reduced;
5. the preparation of the aluminum oxide film does not adopt flammable and explosive reaction gas, and the production safety is improved in the preparation process;
6. the back silicon oxynitride film layer replaces the original silicon nitride film layer, non-hydrogen source reaction gas is introduced, and the using amount of hydrogen-containing source gas is reduced, so that the content of redundant hydrogen atoms in the battery piece is reduced, and the LeTID phenomenon of the battery piece is obviously improved.
Drawings
FIG. 1 is a flow chart of a method of making the present invention;
FIG. 2 is a schematic diagram of the cell structure of the present invention;
wherein the components are described as follows:
1. a front electrode; 2. a front silicon oxynitride layer; 3. a front-side silicon dioxide layer; 4. a silicon wafer substrate; 5. back side alumina layer; 6. a back side silicon dioxide layer; 7. a back silicon oxynitride layer; 8. and a back electrode.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. Examples of the embodiments are illustrated in the accompanying drawings, and specific embodiments described in the following embodiments of the invention are provided as illustrative of the embodiments of the invention only and are not intended to be limiting of the invention.
Example 1
Step S1, forming a surface texture, also called alkaline texturing, by etching the silicon wafer substrate 4 with an alkaline solution, and forming a pyramid-shaped surface topography on the surface of the silicon wafer substrate 4, wherein the reaction alkaline solution: 1.2 wt% NaOH, reaction time: 400s, temperature: reflectance after treatment at 80 ℃: 11 percent;
step S2, phosphorus diffusion, wherein nitrogen flow rate: 700sccm, oxygen flow: 800sccm, reaction time: 88min, temperature: 800 ℃, diffusion sheet resistance: 120 Ω/□; then, a heavily doped region is formed in the region of the front electrode 1 by a laser doping method, and the sheet resistance is as follows: 95 omega/□;
step S3, etching the periphery and polishing the back, corroding the back and the edge of the silicon wafer diffused in the step S2 with 49% HF acid solution, and polishing the back of the silicon wafer with 45% KOH and polishing additives, so as to reduce the weight: 0.25g, back reflectance: 42%;
step S4, back side alumina layer preparation: and printing the alumina paste on the back surface by adopting a screen printing mode, wherein the printing pressure is as follows: 75N, printing speed: 450mm/s, plate spacing (i.e. distance between screen and silicon wafer): 1.2mm, the drying temperature is 320 ℃, and the drying time is 8 min; the thickness of the prepared back alumina layer is 120 nm;
and (3) carrying out high-temperature annealing treatment on the back alumina layer prepared in the step S4 under an inert atmosphere, wherein the annealing temperature is as follows: 600 ℃, annealing time: 15 min;
step S5, depositing a silicon dioxide film on the front and back surfaces respectively by using a thermal oxidation method, wherein the oxygen flow rate is: 2000sccm, pressure: 150pa, thermal oxidation temperature: 650 ℃, time: 20min, wherein the thicknesses of the front silicon dioxide layer and the back silicon dioxide layer are the same and are both 3 nm;
step S6, preparing a silicon oxynitride layer: depositing silicon oxynitride films on the front surface and the back surface respectively by using a PECVD method; the preparation conditions of the front silicon oxynitride layer are as follows: deposition temperature: 450 ℃ N2O flow rate: 900sccm, pressure: 1800pa, deposition time: 650s, for better antireflection effect, positive silicon oxynitride layer adopts three-layer membrane structure, and the direct contact silicon chip base be first layer membrane, thickness: 40nm, refractive index: 2.20; thickness of the second layer film: 25nm, refractive index: 2.08 of; thickness of the third layer film: 15nm, refractive index: 2.00, the equivalent total thickness of the front silicon oxynitride layer is 75-80nm, and the equivalent refractive index is 2.05-2.15; the preparation conditions of the back silicon oxynitride layer are as follows: deposition temperature: 500 ℃ C, N2O flow rate: 800sccm, pressure: 1800pa, deposition time: 500s, the thickness of the back silicon oxynitride layer is 60-70nm, and the refractive index is 2.05-2.10; the equivalent thickness is the thickness directly tested after the three films are deposited together, and the thickness of each film is the thickness tested independently, in the embodiment, the equivalent thickness of the front silicon oxynitride layer is specifically 80nm, and the thickness of the back silicon oxynitride layer is specifically 65 nm;
step S7, back laser grooving: locally grooving the back laminated passivation film by utilizing a laser fusion principle, wherein the parameters of a back laser graph are as follows: the diameter of the light spot: 40 μm, spacing of laser lines: 800 μm;
and step S8, screen printing is adopted for the front electrode 1 and the back electrode 8, current is collected, and the P-type single crystal PERC solar cell is obtained after sintering.
Example 2
Step S1, forming a surface texture, also called alkaline texturing, by etching the silicon wafer substrate 4 with an alkaline solution, and forming a pyramid-shaped surface topography on the surface of the silicon wafer substrate 4, wherein the reaction alkaline solution: 1.2 wt% NaOH, reaction time: 400s, temperature: reflectance after treatment at 80 ℃: 11 percent;
step S2, phosphorus diffusion, wherein nitrogen flow rate: 700sccm, oxygen flow: 800sccm, reaction time: 88min, temperature: 800 ℃, diffusion sheet resistance: 120 Ω/□; then, a heavily doped region is formed in the region of the front electrode 1 by a laser doping method, and the sheet resistance is as follows: 95 omega/□;
step S3, etching the periphery and polishing the back, corroding the back and the edge of the silicon wafer diffused in the step S2 with 49% HF acid solution, and polishing the back of the silicon wafer with 45% KOH and polishing additives, so as to reduce the weight: 0.25g, back reflectance: 42%;
step S4, back surface alumina layer preparation: and printing the alumina paste on the back surface by adopting a screen printing mode, wherein the printing pressure is as follows: 75N, printing speed: 450mm/s, plate spacing: 1.2mm, the drying temperature is 320 ℃, and the drying time is 8 min; the thickness of the prepared back alumina layer is 110 nm;
and (3) carrying out high-temperature annealing treatment on the back alumina layer prepared in the step S4 under an inert atmosphere, wherein the annealing temperature is as follows: 600 ℃, annealing time: 15 min;
step S5, depositing a silicon dioxide film on the front and back surfaces respectively by using a thermal oxidation method, wherein the oxygen flow rate is: 2000sccm, pressure: 150pa, thermal oxidation temperature: 650 ℃, time: 20min, wherein the thicknesses of the front silicon dioxide layer and the back silicon dioxide layer are the same and are both 3 nm;
step S6, preparing a silicon oxynitride layer: depositing silicon oxynitride films on the front surface and the back surface respectively by using a PECVD method; front side nitrogen oxidationThe preparation conditions of the silicon layer are as follows: deposition temperature: 450 ℃ N2O flow rate: 600sccm, pressure: 1900pa, deposition time: 700s, wherein the front silicon oxynitride layer adopts a three-layer film structure, and the silicon wafer substrate 4 is directly contacted with a first layer film, the thickness of which is as follows: 40nm, refractive index: 2.20; thickness of the second layer film: 30nm, refractive index: 2.1; thickness of the third layer film: 15nm, refractive index: 2.00, in this embodiment, the equivalent thickness of the front surface silicon oxynitride layer is specifically 78nm, and the equivalent refractive index is 2.05-2.15; the preparation conditions of the back silicon oxynitride layer are as follows: deposition temperature: 500 ℃ C, N2O flow rate: 900sccm, pressure: 1800pa, deposition time: 550s, the thickness of the back silicon oxynitride layer is 70nm, and the refractive index is 2.05-2.10.
Step S7, back laser grooving: locally grooving the back laminated passivation film by utilizing a laser fusion principle, wherein the parameters of a back laser graph are as follows: the diameter of the light spot: 35 μm, spacing of laser lines: 800 μm.
And step S8, screen printing is adopted for the front electrode 1 and the back electrode 8, current is collected, and the P-type single crystal PERC solar cell is obtained after sintering.
Control group:
the steps of the manufacturing process are the same as those of the embodiment of the invention except that the following steps are carried out:
preparation of back side alumina/silicon nitride laminated film: depositing an aluminum oxide film and a silicon nitride film on the back surface by using a PECVD method, wherein the thickness of the aluminum oxide film is 17-20 nm; the process conditions for depositing the silicon nitride are as follows: deposition temperature: 450 ℃ SiH4Flow rate: 700sccm, NH3Flow rate: 6700sccm, pressure: 1800pa, deposition time: 910s, thickness of deposited back silicon oxynitride film: 110-: 2.05-2.10.
Preparing a front silicon nitride layer: depositing a silicon nitride film on the front surface by using a PECVD method, wherein the deposition temperature is as follows: 450 ℃ SiH4Flow rate: 1300 sccm; NH (NH)3Flow rate: 6400sccm, pressure: 1800pa, deposition time: 600s, deposited front side silicon nitride film thickness 85nm, refractive index: 2.07-2.10.
The results of the LeTID test (70-80 ℃) for the P-type single crystal PERC cells prepared in examples 1, 2 and control were as follows:
| group of | 5KWh | 60KWh |
| Example 1 | 1.12％ | 2.09％ |
| Example 2 | 1.32％ | 2.29％ |
| Control group | 1.69％ | 2.71％ |
As can be seen from the above table, the use of raw materials for hydrogen source is significantly reduced in the manufacturing processes of the batteries of examples 1 and 2 compared with the control group, and it is understood from the above table that the let tid attenuation rates of the batteries of examples 1 and 2 at 5KWh and 60KWh are both lower than that of the control group, and it is understood from comparative examples 1 and 2 that the increase of the reaction gas other than the hydrogen source and the reduction of the source of the hydrogen source have a significant improvement effect on the reduction of the let tid attenuation under the same manufacturing process conditions.
The invention also provides a P-type single crystal PERC battery which is manufactured by the manufacturing method, and the structure of the film layer material is different from the prior art and is represented as follows:
1. the front antireflection film is made of a silicon dioxide/silicon oxynitride film layerCompared with the prior single silicon nitride film layer structure, the reaction gas N without hydrogen source is added in the preparation process2O, reduction of reaction gas NH3And SiH4The dosage of the composition is reduced, so that the content of hydrogen atoms in the battery piece is reduced, and the LeTID phenomenon of the battery piece is finally improved; in addition, compared with the conventional silicon nitride film layer, the refractive index of the silicon dioxide/silicon oxynitride film layer can be regulated and controlled according to the proportion of the reaction gas, so that the optical characteristics can be better met, more incident light can be absorbed, and more photon-generated carriers can be generated;
2. the screen printing method is adopted to replace the conventional PECVD/ALD method for preparing the aluminum oxide film layer on the back, and the conventional PECVD method or the ALD method for depositing aluminum oxide needs a reactant Al (CH) containing a large amount of hydrogen source3)3In the reaction process, a large amount of hydrogen atoms are introduced into the silicon chip, and besides some hydrogen atoms are needed for passivation, redundant hydrogen atoms exist in a finished product of the battery chip, so that the LeTID phenomenon of the battery chip is seriously influenced; the preparation of the aluminum oxide film by adopting a screen printing mode can be realized by using a reaction material without a hydrogen source, so that the source of hydrogen atoms is greatly reduced, and the LeTID phenomenon of the cell is effectively improved; in addition, the screen printing of the alumina film can be compatible with the screen printing equipment of the original production line, no additional equipment is needed, the cost of the alumina slurry is far lower than the cost of reaction gas of a PECVD/ALD method, the total manufacturing cost of the cell is greatly reduced, and the development trend of cost reduction and efficiency improvement in the photovoltaic industry is met; in addition, because the aluminum oxide film prepared by screen printing does not adopt flammable and explosive reaction gases, the safety is also improved in the manufacturing process.
It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims. In the claims, the word "comprising" does not exclude the presence of data or steps not listed in a claim.
Claims (8)
1. A manufacturing method of a P-type single crystal PERC battery is characterized by comprising the following steps:
step S1, surface texturing: forming a pyramid-shaped surface morphology on the surface of the P-type silicon wafer by using the anisotropic corrosion characteristic that a low-concentration alkali solution has different corrosion rates on the silicon wafer in different crystal orientations, wherein the reaction alkali solution: 1.0-1.5 wt% NaOH, reaction time: 200 and 400s, temperature: 70-90 ℃, reflectance: 11 to 12 percent;
step S2, high temperature phosphorus diffusion: introducing phosphorus oxychloride as a diffusion source into a high-temperature diffusion furnace through a constant-temperature liquid source bottle by using nitrogen, introducing sufficient oxygen, and diffusing phosphorus atoms after reaction into a P-type silicon wafer to form N-type impurity distribution to obtain a PN junction, wherein the nitrogen flow rate is as follows: 500-800sccm, oxygen flow: 600-1000sccm, reaction time: 80-100min, temperature: 700 ℃ and 800 ℃, diffusion sheet resistance: 110-: 90-100 omega/□;
step S3, periphery etching and back polishing: corroding the back and the edge of the diffused silicon wafer by using HF acid liquor, removing N-type silicon at the edge, so that the front surface and the back surface of the silicon wafer are mutually insulated, polishing the back of the silicon wafer by using KOH and a polishing additive, wherein the reflectivity of the back is as follows: 40-45%;
step S4, back side alumina layer preparation: use the thick liquids mixer with alumina thick liquids intensive mixing even, adopt the screen printing mode again with alumina thick liquids printing at the silicon chip back, wherein, printing pressure: 50-80N, printing speed: 300-400mm/s, plate spacing: 0.5-1.5mm, drying condition: 280 ℃ and 350 ℃ for 5-10 min;
step S5, preparation of a silica layer: depositing a layer of silicon dioxide film on the front surface and the back surface by adopting a thermal oxidation method, wherein the oxygen flow rate is as follows: 1000-: 100-300pa, thermal oxidation temperature: 600 ℃ and 700 ℃, time: 10-30 min;
step S6, preparing a silicon oxynitride layer: depositing silicon oxynitride films on the front surface and the back surface respectively by using a PECVD method, wherein the preparation conditions of the front silicon oxynitride layer of at least one layer of film structure are as follows: deposition temperature: 450 ℃ and 550 ℃, N2O flow rate: 200-800sccm, pressure: 1500-: 500-700 s; back side of the panelThe preparation conditions of the silicon oxynitride layer are as follows: deposition temperature: 500 ℃ C and 550 ℃ C, N2O flow rate: 500-: 1500-: 350-600 s;
step S7, back laser grooving: local grooving of the back laminated passivation film is carried out by utilizing a laser fusion principle, and the parameters of a back laser graph are as follows: the diameter of the light spot: 20-50 μm, laser line spacing: 500-900 μm;
step S8, front and back electrode preparation: and preparing front and back electrodes by a screen printing method, collecting current, and sintering to obtain the P-type single crystal PERC cell.
2. The method of claim 1, wherein: in the step S6, the front surface silicon oxynitride layer has a three-layer film structure, wherein the first layer film is in contact with the silicon wafer substrate, and the first layer film is thick: 35-45nm, refractive index: 2.15-2.25; the thickness of the second layer: 20-30nm, refractive index: 2.05-2.15; the thickness of the third layer is as follows: 10-15 nm; refractive index: 1.90-2.00.
3. The method of claim 1, wherein: before step S5, the method further includes the following steps: and (3) carrying out high-temperature annealing treatment on the aluminum oxide layer prepared in the step S4 under an inert atmosphere, wherein the annealing temperature is as follows: 550 ℃ and 600 ℃, annealing time: 10-20 min.
4. The method of claim 1, wherein: the thickness of the back side alumina layer prepared in step S4 is 100-150 nm.
5. The method of claim 1, wherein: the thickness of the silicon dioxide layer prepared in step S5 is 2-5 nm.
6. The method of manufacturing a P-type single crystal PERC cell of claim 1 or 2, wherein: the front-side silicon oxynitride layer prepared in step S6 has a thickness of 75 to 80nm and a refractive index of 2.05 to 2.15.
7. The method of claim 6, wherein: the back silicon oxynitride layer prepared in step S6 has a thickness of 60 to 70nm and a refractive index of 2.05 to 2.10.
8. A P-type single crystal PERC cell produced by the production method according to any one of claims 1 to 7.
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