CN110391190A - 模制化合物和具有模制化合物的半导体封装 - Google Patents
模制化合物和具有模制化合物的半导体封装 Download PDFInfo
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Abstract
公开了一种模制化合物和一种具有模制化合物的半导体装置。模制化合物包括:基质;以及包括填充物颗粒的填充物。填充物颗粒均包括内核和电绝缘封盖,所述内核包括导电或者半导电材料。
Description
技术领域
本公开总体上涉及模制化合物和包括具有模制化合物的封装的半导体装置。
背景技术
模制化合物是用于包封半导体管芯的塑料,其中,例如,将分立的半导体器件或者具有多个集成器件的集成电路加以集成。通常,模制化合物是合成材料,其包括诸如环氧树脂或者硅树脂的基质材料以及作为主成分的诸如二氧化硅的填充物。
能够对模制化合物进行模制,并将其固化为固体形状的封装。在该固体状态下,可以保护包封的半导体以免受到各种潜在的损伤,并且提供了电绝缘。
由固化的模制化合物组成的封装可以包括诸如作为杂质的离子或者带电分子的移动或者固定电荷载流子。这样的杂质可能最初就包括在模制化合物中,可能源于制造过程,或者可能随时间扩散到封装中。这样的杂质的示例包括氢氧离子(OH-)或者钠离子(Na+)。在操作期间,一些类型的半导体管芯可能在封装中产生电场。特别是,其中集成了诸如二极管或者晶体管的功率半导体器件的半导体管芯可能在封装中产生具有高场强的电场。这样的电场可能导致带电杂质进入封装,并且累积在封装内部的某些位置。带电杂质的这种累积可以对集成于管芯中的器件的操作产生负面影响。具体地讲,这样的带电杂质可能降低器件的电压阻断能力,并且增强泄漏电流。
存在着对减小或避免封装中的带电杂质的累积的模制化合物的需求。
发明内容
一个示例涉及模制化合物。模制化合物包括基质和包括填充物颗粒的填充物,其中,填充物颗粒均包括具有导电或者半导电材料的内核以及电绝缘封盖。
另一个示例涉及具有至少一个半导体管芯以及先前所解释类型的模制化合物的半导体装置。
附图说明
以下参照附图解释示例。附图用于示出某些原理,所以仅示出了理解这些原理所需的方面。附图未必是按比例的。在附图中,相同的附图标记表示相似的特征。
图1A和图1B示出了包括基质和具有填充物颗粒的填充物的模制化合物的一个示例;
图2A和图2B示出了包括具有模制化合物的封装的半导体装置的竖直截面图和所述封装的细节的放大视图;
图3示意性地示出了具有粗糙表面的填充物颗粒的一个示例;
图4示出了具有由模制化合物制成的封装的半导体装置的竖直截面图;
图5示出了根据另一个示例的半导体装置的竖直截面图;以及
图6A和图6B示出了包括多个半导体管芯和至少部分填充有模制化合物的外壳的半导体装置的一个示例。
具体实施方式
在以下具体实施方式中,将参照附图。附图形成了描述的一部分,并且出于例示的目的而示出了可以如何使用和实施本发明的示例。应该理解,可以将本文中所描述的各种实施例的特征彼此组合,除非另外明确指出。
图1A和图1B示出了模制化合物的一个示例。图1A示出了模制化合物的一个部分的竖直截面图,并且图1B示出了图1A中所示的模制化合物的放大的细节A。参照图1A和图1B,模制化合物包括基质1和具有嵌入在基质1中并且被基质1包围的多个填充物颗粒2的填充物。参照图1B,填充物颗粒2(以下简称为颗粒2)中的每者包括内核21和包围内核21的封盖22。内核21包括导电或者半导电材料,并且封盖22包括电绝缘材料。
根据一个示例,,模制化合物包括至少10重量百分比(wt.%)的填充物、至少30wt.%的填充物、或者至少50wt.%的填充物。即,模制化合物的重量的至少10%、至少30%、或者至少50%源自填充物颗粒2的重量。特别是,模制化合物可以包括至少60wt.%和90wt.%之间的填充物。
根据一个示例,基质1包括环氧树脂。基于包括环氧树脂的模制化合物,通过对模制化合物加热以使环氧树脂流动、将模制化合物引入模具中、固化模制化合物、以及从模具去除由模制化合物制作的封装,能够形成半导体封装。另外,对于基质1和填充物颗粒2,模制化合物可以包括加速模制化合物固化的催化剂和促进固化的模制化合物从模具释放的脱模剂的至少其中之一。根据一个示例,模制化合物中的这些附加成分中的每者的一部分少于3wt.%。
另外,模制化合物可以包括电绝缘且导热的颗粒,例如,由金刚石、碳化钨、其它碳化物、氮化铝、氮化硅或者电绝缘氮化硅(SiC)制成的颗粒。这种颗粒可以帮助减小模制化合物的热电阻。
根据另一个示例,基质1包括硅树脂。可以通过使模制化合物接触空气或者通过采用炉工艺来使基于硅树脂的模制化合物固化。
根据一个示例,内核21包括半导体材料,并且封盖22包括半导体氧化物。半导体材料的示例包括但不限于硅(Si)和碳化硅(SiC)。具有由硅或者碳化硅组成的内核21的颗粒2可以包括由氧化硅(SiO2)组成的封盖22。根据一个示例,内核21包括掺杂的半导体材料,以增强内核的导电性。掺杂类型能够是n-型或者p-型。根据一个示例,掺杂浓度高于1E18cm-3、高于1E19cm-3、或者高于1E21cm-3。
根据一个示例,以上所提到的可以用作电绝缘且导热的颗粒的“电绝缘氮化硅”颗粒是未掺杂的或者具有低于1E14cm-3的掺杂浓度的SiC颗粒。
根据另一个示例,内核21包括金属,并且封盖22包括对应的金属氧化物。金属的示例包括但不限于铝(Al)、镁(Mg)、镍(Ni)、锌(Zn)、或者钛(Ti)。
通过提供半导体颗粒或者金属颗粒、以及通过在温度过程中在氧化气氛中氧化这些颗粒的表面,可以形成填充物颗粒。例如,通过(a)将单晶或者多晶硅研磨成期望尺寸的颗粒、以及(b)在氧化气氛中在温度过程中氧化由研磨过程所得的半导体颗粒的表面,能够形成具有硅内核21和氧化硅封盖22的颗粒。
根据一个示例,填充物颗粒被选择为使其尺寸在10微米(μm)和100微米之间。一个颗粒的“尺寸”是一个颗粒的平均直径d,由以下公式给出:
其中,d是颗粒2的平均直径,并且V是颗粒2的体积。仅出于例示的目的,在图1A和图1B中,颗粒2被描绘为具有球形形状。然而,这仅出于例示的目的。颗粒2也可以被形成为具有任何其它形状。
根据一个示例,颗粒2具有基本相同的尺寸。根据另一个示例,颗粒2包括两组或两组以上的颗粒,其中,一组的颗粒基本上具有相同的尺寸。“相同的尺寸”意味着颗粒的尺寸处于0.9·di和1.1·di的范围内,其中,di是相应组的颗粒的期望尺寸。
根据一个示例,封盖22的厚度处于2纳米(nm)和400纳米之间。封盖的“厚度”是封盖的沿垂直于封盖22的表面或者垂直于封盖22和内核21之间的界面的方向的尺寸。
根据一个示例,封盖22的厚度适应于颗粒的平均直径,以使填充物颗粒的介电强度大于基质的介电强度。以下通过示例的方式对此加以解释。假设基质1是具有大约100kV/cm的介电强度的环氧树脂并且封盖22是具有大约2MV/cm(约为填充物材料的介电强度的20倍)的介电强度的二氧化硅。为了实现填充物颗粒2不降低模制化合物的介电强度,填充物颗粒的直径的大约1/20应该由封盖22形成。该百分比随着封盖材料的介电强度相对于基质的介电强度的减小而增加,反之亦然。
由固化的模制化合物构成的封装可以包括诸如离子或者带电分子的电荷载流子作为杂质。这样的电荷载流子可能最初就包括在模制化合物中,或者可能随时间推移而扩散到封装3中。这样的杂质的示例包括氢氧离子(OH-)或者钠离子(Na+)。这样的电荷载流子在电场的影响下能够在模制化合物中移动。在包括诸如熔融的二氧化硅颗粒的电绝缘填充物颗粒的常规模制化合物中,带正电的载流子可以在接近产生电场的负电位的源的位置处累积,并且带负电的载流子可以在接近产生电场的正电位的源的位置处累积。电荷载流子的这种累积可能对由封装包封的半导体管芯中所集成的半导体器件或者集成电路产生负面影响。
当使用参照图1A和图1B所解释的类型的模制化合物(即,包括具有导电或者半导电内核21和封盖22的填充物颗粒2的模制化合物)时,避免或者至少减少了电荷载流子在某些位置处的这种累积。以下参照图2A和图2B对此加以解释。
图2A示意性地示出了包括半导体管芯100和包括参照图1A和图1B所解释的类型的模制化合物的封装3的半导体装置的一个部分的截面图。在图2A中,仅示出了半导体管芯100的一个部分以及具有模制化合物的封装3的一个部分。更具体地讲,图2A示出了在接近半导体管芯的表面101的区域中的半导体管芯100的一个部分以及与该表面相邻的封装3的部分。封装3可以直接邻接半导体管芯100的表面101。可选地,绝缘或者钝化层200被布置在半导体管芯100的表面101和封装3之间。绝缘或者钝化层200可以包括氧化物层、氮化物层、酰亚胺层等中的至少一个。根据一个示例,绝缘或者钝化层200包括具有多个不同电绝缘层的层堆叠体。根据一个示例,布线装置嵌入在绝缘或者钝化层200中。该布线装置可以将集成于半导体管芯100中的半导体器件(未示出)互相连接。另外,布线装置还可以包括绝缘或者钝化层200的表面201处的接触焊盘(未示出),其中,这些接触焊盘能够被用于从外部接触集成于半导体管芯100中的一个或多个半导体器件。这样的布线装置是已知的,因此在这方面不需要做进一步的解释。
在图2A中,附图标记111和112表示在半导体管芯100的操作期间具有不同电位的半导体管芯100的区域。这些区域111、112可以是掺杂的半导体区或者金属化部。这些区域111、112可以是半导体管芯100中的可以具有不同电位的各种区域中的两个区域。这些区域111、112的示例包括但不限于:功率半导体器件的边缘端接的场板;横向功率晶体管器件的源极区和漏极区;竖直功率晶体管器件的源极区和场板等。
由于区域111、112的不同电位,在这些区域111、112之间存在电场,其中,该电场可以延伸到封装3中。仅出于例示的目的,图2中用虚线示出了封装3中的电场的场线。图2B是图2A中所示的封装3的部分B的放大视图。参照图2B,出于例示的目的,其仅示出了电场的一条场线,电场未穿过填充物颗粒2的内核21。这是由于内核21由导电或者半导电材料制成这一事实。由于电场,内核21具有某一电位。该电位在内核21的每一个位置处都相同,并且因此在内核21和绝缘封盖22之间的界面的每一个位置处都相同。参照图2B,由于电场,带电离子可以到达颗粒2。仅出于例示的目的,图2B中示出了一些带正电的载流子P和一些带负电的载流子N。在已经到达颗粒2的表面的情况下,不存在将进一步移动电荷载流子P、N的力。这是由于内核21摆脱了电场这一事实。于是,在带有具有导电或者半导电内核21和绝缘封盖22的颗粒2的模制化合物中,电荷载流子P、N以某中方式在个体颗粒2处被捕获。由于分布在模制化合物之上的大量颗粒2原因,被捕获的电荷载流子也分布在模制化合物之上,并且不在靠近第一和第二区域111、112的位置的模制化合物中累积,以使得局部增强的电场能够出现。
通过实施具有包括空穴的粗糙表面的填充物颗粒2,能够改进以上所解释的捕获效果。图3中示意性地示出了具有粗糙表面的填充物颗粒2的一个示例。当在研磨过程中由较大片的导电或者半导电材料产生填充物颗粒2并且对通过研磨过程所获得的颗粒进行氧化时,能够获得这种粗糙的或者不规则形成的表面。
根据一个示例,填充物颗粒2包括与半导体管芯100相同类型的半导体材料。然而这些材料的掺杂水平可能不同。在该情况下,主要由填充物材料组成的模制化合物和半导体管芯100基本上具有相同的热膨胀系数。这有助于减小半导体管芯100和模制化合物之间的界面处的热应力。就此而论,应该加以注意的是,本文中所使用的“半导体管芯”表示包括单晶半导体主体的装置,并且可以另外包括钝化层、钝化层内部的布线装置以及直接位于单晶半导体主体的表面上或者钝化层的表面上的接触焊盘。“半导体管芯的半导体材料”是包括在半导体管芯中的单晶半导体主体的半导体材料。根据一个示例,以上所提到的“相同类型的半导体材料”包括:半导体管芯包括单晶硅(Si)或者碳化硅(SiC)中的至少一个,并且填充物颗粒2的内核21包括Si或者SiC之一,其中,内核21可以包括单晶或者多晶半导体材料。
根据一个其它示例,填充物颗粒2的热膨胀系数可以小于半导体管芯100的热膨胀系数,并且模制化合物的其它材料(例如,基质1)的热膨胀系数可以大于半导体管芯100的热膨胀系数。在该情况下,模制化合物中的填充物颗粒2和基质1的组合可以产生基本上等于半导体管芯100的热膨胀系数的平均热膨胀系数。根据一个示例,填充物颗粒2包括碳化硅(SiC)内核22,并且半导体管芯100包括单晶硅(Si),其中,SiC具有低于Si的导热系数。
以上所解释的模制化合物可以用于形成用于包封至少一个半导体管芯的各种类型的封装。即,图2A中仅示出了其一部分的封装3可以具有不同的形式。以下参照图4、5以及图6A至图6B解释一些示例。
图4示出了包括由之前在本文中解释的类型的模制化合物制成的封装3的半导体装置的竖直截面图。该封装3包封半导体管芯100。另外,半导体装置包括从封装3突出并且电连接到封装3内部的半导体管芯100的腿51、52。腿51、52可以按各种方式连接到半导体管芯100。图4中示出了能够如何将腿51、52连接到半导体管芯100的两个不同示例。在图4中所示的示例中,腿51、52中的一个51连接到半导体管芯100,其中,半导体管芯100的接触表面被安装到布置在封装3内部的腿51的一部分。所述腿中的另一个52使用接合线51连接到半导体管芯100。接合线连接在封装3内部的腿52的接触焊盘和半导体管芯100的接触焊盘之间。图4中未明确示出半导体管芯100的接触焊盘。尽管图4仅示出了半导体装置的两条腿51、52,然而应该加以注意的是,从封装3突出并且连接到半导体管芯100的不同接触焊盘的多个腿可以包括在半导体装置中。
图5示出了具有半导体管芯100和封装3的另一种类型的半导体装置。在该示例中,连接到半导体管芯100的接触焊盘的接触电极53、54在封装3的表面处是可触及的。该类型的装置可以被称为SMD(表面安装器件)。
根据一个示例,图4和图5中所示类型的半导体装置仅包括一个半导体管芯100。然而,这仅为一个示例。根据另一个示例(未示出),由图4和图5中所示类型之一的封装3包封两个或者更多半导体管芯。能够按所谓的逐个芯片配置将这些半导体管芯紧靠彼此布置。根据另一个示例,按所谓的逐个芯片配置将两个或者更多半导体管芯中的一个布置在两个或者更多半导体管芯中的另一个上。例如,根据图4和图5的封装3的基质材料是环氧树脂。
图6A和图6B示出了根据另一个示例的半导体装置。在该示例中,半导体装置包括其中布置了多个半导体管芯1001-1003的外壳6、7。之前在本文中所解释的类型的模制化合物1、2至少部分地填充了半导体管芯1001-1003和外壳7之间的空间。根据一个示例,在该示例中基质材料是硅树脂。在图6A和图6B中所示出的示例中,外壳包括衬底6和封盖7。图6A和图6B中未示从外壳6、7突出并且连接到外壳内部的管芯1001-1003的接触引脚。在该示例中,由外壳6、7和外壳6、7内部的模制化合物形成半导体装置的封装。
参照图6A和图6B,半导体管芯1001-1003安装到衬底6的第一接触焊盘63。根据一个示例,衬底6是DCB(直接铜焊接合)衬底,并且包括电绝缘载体61和载体61上的若干接触焊盘62、63、64(在图6A和图6B中所示的示例中为三个)。根据一个示例,载体61由陶瓷制成,并且接触焊盘包括铜。根据一个示例,半导体管芯1001-1003不仅安装到第一接触焊盘63,而且还电连接到接触焊盘63。
参照图6A和图6B,在管芯1001-1003的背离第一接触焊盘61的相应表面处,半导体管芯1001-1003还可以包括接触焊盘1211-1213、1221-1223。管芯1001-1003的这些其它接触焊盘1211-1213、1221-1223可以通过接合线431-433、421-423(如所示)、平面导体等连接到衬底6的第二和第三接触焊盘62、64。
根据一个示例,竖直功率晶体管集成在半导体管芯1001-1003中,其中,相应功率晶体管的漏极节点形成在连接到第一接触焊盘63的半导体管芯1001-1003的那些表面处,由接触焊盘1211-1223形成源极节点,并且由其它接触焊盘1211-1213形成栅极节点。
在图6A和图6B中所示出的示例中,衬底6形成外壳的一部分。然而,这仅为示例。根据另一个示例(未示出),具有管芯的衬底嵌入在外壳中。
尽管本公开未被如此限制,以下编号的示例展示了本公开的一个或多个方面。
示例1。一种模制化合物,包括:基质;以及包括填充物颗粒(2)的填充物,其中,填充物颗粒均包括内核以及电绝缘封盖,内核包括导电或者半导电材料。
示例2。示例1的模制化合物,其中,内核包括硅和碳化硅之一,并且其中,封盖包括氧化硅。
示例3。示例1至2的任何组合的模制化合物,其中,半导电材料为掺杂的半导电材料。
示例4。示例1至3的任何组合的模制化合物,其中,掺杂的半导电材料的掺杂浓度大于1E18cm-3。
示例5。示例1至4的任何组合的模制化合物,其中,内核包括金属,并且其中,封盖包括金属氧化物。
示例6。示例1至5的任何组合的模制化合物,其中,模制化合物包括至少10wt.%的填充物。
示例7。示例1至6的任何组合的模制化合物,其中,模制化合物包括60wt.%和90wt.%之间的填充物。
示例8。示例1至7的任何组合的模制化合物,其中,填充物颗粒的颗粒尺寸处于10微米和100微米之间。
示例9。示例1至8的任何组合的模制化合物,其中,封盖的厚度处于2纳米和400纳米之间。
示例10。示例1至9的任何组合的模制化合物,其中,封盖具有粗糙的表面。
示例11。示例1至10的任何组合的模制化合物,其中,基质包括环氧树脂和硅树脂之一。
示例12。示例1至11的任何组合的模制化合物,还包括催化剂、脱模剂材料、以及着色剂中的至少一个。
示例13。一种半导体装置,包括:至少一个半导体管芯;以及根据数量1到示例12的任何组合的模制化合物。
示例14。示例13的半导体装置,其中,半导体管芯包括单晶硅(Si)和单晶碳化硅(SiC)中的至少一个。
示例15。示例12至14的任何组合的半导体装置,还包括:载体,其中,至少一个半导体管芯安装到载体。
示例16。示例12至15的任何组合的半导体装置,其中,半导体装置包括安装到载体的多个半导体管芯。
示例17。示例12至16的任何组合的半导体装置,其中,模制化合物形成半导体装置的封装。
示例18。示例12至17的任何组合的半导体装置,还包括:外壳,其中,模制化合物至少部分地填充外壳。
尽管已经参照例示性示例描述了本发明,然而该描述并不旨在被解释为限制性意义。当参照所述描述时,本领域技术人员将会明显意识到,可以对这些例示性示例以及本发明的其它示例进行修改和组合。因此,旨在使所附权利要求包括任何这种修改或者示例。
Claims (18)
1.一种模制化合物,包括:
基质(1);以及
包括填充物颗粒(2)的填充物,
其中,所述填充物颗粒均包括内核(21)和电绝缘封盖(22),所述内核包括半导电材料。
2.根据权利要求1所述的模制化合物,
其中,所述内核(21)包括硅和碳化硅之一,并且
其中,所述封盖(22)包括氧化硅。
3.根据权利要求1或2所述的模制化合物,
其中,所述半导电材料为掺杂的半导电材料。
4.根据权利要求3所述的模制化合物,
其中,所述掺杂的半导电材料的掺杂浓度大于1E18cm-3。
5.根据上述权利要求中的任一项所述的模制化合物,
其中,所述模制化合物包括至少10wt.%的所述填充物。
6.根据权利要求5所述的模制化合物,
其中,所述模制化合物包括60wt.%和90wt.%之间的所述填充物。
7.根据上述权利要求中的任一项所述的模制化合物,
其中,所述填充物颗粒的颗粒尺寸处于10微米和100微米之间。
8.根据权利要求6所述的模制化合物,
其中,所述封盖的厚度处于2纳米和400纳米之间。
9.根据上述权利要求中的任一项所述的模制化合物,其中,所述封盖具有粗糙的表面。
10.根据上述权利要求中的任一项所述的模制化合物,其中,所述基质包括环氧树脂和硅树脂之一。
11.根据上述权利要求中的任一项所述的模制化合物,还包括催化剂、脱模剂材料、以及着色剂中的至少一个。
12.一种半导体装置,包括:
至少一个半导体管芯(100;1001-1003),其包括半导体材料;以及
根据权利要求1至11中的任一项所述的模制化合物。
13.根据权利要求12所述的半导体装置,
其中,所述填充物颗粒(2)包括与所述半导体管芯(100)相同类型的半导体材料。
14.根据权利要求13所述的半导体装置,
其中,所述半导体管芯(100;1001-1003)中的至少一个包括单晶硅(Si)和单晶碳化硅(SiC)中的至少一个。
15.根据权利要求13或者14所述的半导体装置,还包括:
载体(61),
其中,所述至少一个半导体管芯(100;1001-1003)安装到所述载体(61)。
16.根据权利要求15所述的半导体装置,
其中,所述半导体装置包括安装到所述载体(61)的多个半导体管芯(100;1001-1003)。
17.根据权利要求12至16中的任一项所述的半导体装置,
其中,模制化合物(1)形成所述半导体装置的封装。
18.根据权利要求12至16中的任一项所述的半导体装置,还包括:
外壳,
其中,所述模制化合物(1)至少部分地填充所述外壳。
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