CN110380708A - A kind of ultra wide band width mutually compensates digital switch attenuator circuit - Google Patents
A kind of ultra wide band width mutually compensates digital switch attenuator circuit Download PDFInfo
- Publication number
- CN110380708A CN110380708A CN201910496739.9A CN201910496739A CN110380708A CN 110380708 A CN110380708 A CN 110380708A CN 201910496739 A CN201910496739 A CN 201910496739A CN 110380708 A CN110380708 A CN 110380708A
- Authority
- CN
- China
- Prior art keywords
- resistance
- transistor
- port
- connects
- grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/24—Frequency-independent attenuators
- H03H11/245—Frequency-independent attenuators using field-effect transistor
Landscapes
- Networks Using Active Elements (AREA)
Abstract
The present invention discloses a kind of ultra wide band width and mutually compensates digital pad circuit, circuit is cascaded by n attenuation units by inductance matching, and the n attenuation units are using any one or more in the T-type circuit, the bridge-T topological structure with collocation structure and the π type topological structure with phase compensation structure that simplify structure.This circuit topological structure is simple, can realize ultra wide band working range with phase compensation structure, has the characteristics that low phase error, low insertion loss, attenuation accuracy are high, can be produced in enormous quantities using microwave monolithic integrated circuit technology.
Description
Technical field
The present invention relates to field of radio frequency integrated circuits, and in particular to a kind of ultra wide band width mutually compensates digital switch attenuator electricity
Road.
Background technique
Attenuator is the key that one of wireless communication, phased-array radar and instrument system comprising modules, main function
Amplitude control, the gain of Lai Shixian Serial regulation, the purpose for increasing dynamic range can be to provide.In the prior art, most of steps
Three kinds of basic topology types: π type attenuator, T-type attenuator, bridge-T type attenuator are depended on into attenuator.It sets at these
In meter, determine that signal is bypass or decays by the switching transistor working condition of attenuation units, therefore these types
Attenuator is highly dependent on the performance of switching transistor, but the parasitic parameter of transistor usually makes adding under attenuation state
Phase shift becomes larger, and attenuator is caused to introduce unnecessary phase fluctuation in use.
Summary of the invention
In view of the deficiencies of the prior art, the present invention proposes that a kind of ultra wide band width mutually compensates digital switch attenuator circuit, can
To effectively reduce transistor parasitic bring added phase shift, broadened bandwidth promotes precision.
The purpose of the present invention is realized by following technical solution:
A kind of ultra wide band width mutually compensates digital pad circuit, which is characterized in that the circuit is led to by n attenuation units
It crosses inductance matching to cascade, the n attenuation units are using T-type circuit, the bridge- with collocation structure for simplifying structure
Any one or more in T topological structure and π type topological structure with collocation structure；The T-type circuit of the simplification structure
It is made of resistance Rb1, Rb2, transistor Mb1, and there are two port Pb1, Pb2, wherein port Pb2 is connected to radio-frequency signal path
Upper as bypass, Pb1 is control signal input, connects one end of resistance Rb1, the grid of the other end connection transistor Mb1 of Rb1
Pole, one end of the source electrode connection resistance Rb2 of drain electrode the connectivity port Pb2, Mb1 of Mb1, the other end ground connection of resistance Rb2；
The bridge-T topological structure with collocation structure by resistance Ra1, Ra2, Ra3, Ra4, Ra5, Ra6, Ra7,
Ra8, transistor Ma1, Ma2, Ma3, capacitor Ca1 composition, and there are five port, are IN, OUT, Pa1, Pa2, Pa3 respectively, wherein
Radiofrequency signal input enters from the port IN, exports from OUT terminal mouth, and Pa1, Pa2, Pa3 are the control signal input mouth of transistor；
The port IN connects with the drain electrode of one end of resistance Ra2, Ra5, transistor Ma2, the other end of resistance Ra2 and one end of capacitor Ca1
And one end of Ra3 connects, the drain electrode of the other end and Ma1 of capacitor Ca1 connects, and the grid and resistance Ra1 of Ma1 connects, crystal
The source electrode of pipe Ma1 is grounded.The other end and control port Pa1 of resistance Ra1 connects, one end of the resistance Ra3 other end and Ra6 and
The source electrode of transistor Ma2 all connects with OUT terminal mouth, and the grid of transistor Ma2 is connected by resistance Ra4 and control port Pa2.Electricity
The drain electrode of the resistance other end of Ra5, the other end of resistance Ra6, transistor Ma3 links together, and the grid of transistor Ma3 passes through electricity
Resistance Ra7 and control port Pa3 links together.The source electrode of transistor Ma3 is grounded by resistance Ra8；
The π type topological structure with collocation structure is by resistance Rc1, Rc2, Rc3, Rc4, Rc5, Rc6, Rc7, Rc8, electricity
Hold Cc1, transistor Mc1, Mc2, Mc3, Mc4 composition, and be IN, OUT, Pc1, Pc2, Pc3 respectively there are five port, wherein penetrates
The input of frequency signal enters from the port IN, exports from OUT terminal mouth, and Pc1, Pc2, Pc3 are the control signal input mouth of transistor, IN
Port is connected with one end of resistance Rc2, the drain electrode of transistor Mc2 and the drain electrode of transistor Mc3, the other end of resistance Rc2 with
One end of capacitor Cc1 and one end of Rc3 connect, and the drain electrode of the other end and Mc1 of capacitor Cc1 connects, the grid and resistance of Mc1
One end of Rc1 connects, the source electrode ground connection of transistor Mc1；The other end and control port Pc3 of resistance Rc1 connects, OUT terminal mouth with
The drain electrode of the other end of resistance Rc3, the source electrode of transistor Mc2 and transistor Mc4 is connected, the grid and resistance of transistor Mc2
One end of Rc4 is connected, and the other end of resistance Rc4 is connected with control terminal Pc2, one end phase of the grid and resistance Rc5 of transistor Mc3
Even, the grid of transistor Mc4 is connected with one end of resistance Rc6, and the other end of resistance Rc5 is connected simultaneously with the other end of resistance Rc6
It is connected to control port Pc1, one end of resistance Rc7 is connected with the source electrode of transistor Mc3, the other end ground connection of resistance Rc7, resistance
One end of Rc8 is connected with the source electrode of transistor Mc4, the other end ground connection of resistance Rc8.
Further, the transistor in the circuit is N-type Metal-Oxide Semiconductor field effect transistor.
Beneficial effects of the present invention are as follows:
Ultra wide band width of the invention mutually compensates digital switch attenuator circuit and cascades multiple attenuation units by inductance matching,
Highly attenuating unit and the staggered matching performance that can effectively improve attenuator of low attenuation units, compared with prior art,
Additional phase shift is small, attenuation accuracy is high, working band is wide, input and output match.
Detailed description of the invention
Fig. 1 is the overall structure block diagram that ultra wide band width of the invention mutually compensates digital switch attenuator circuit.
Fig. 2 opens up for the circuit that ultra wide band width of the invention mutually compensates Bridge-T type attenuation units in digital switch attenuator
Flutter structure chart.
Fig. 3 opens up for the circuit that ultra wide band width of the invention mutually compensates simplified style T-type attenuation units in digital switch attenuator
Flutter structure chart.
Fig. 4 is the circuit topological structure that ultra wide band width of the invention mutually compensates π type attenuation units in digital switch attenuator
Figure.
Fig. 5 is that ultra wide band width of the invention mutually compensates digital switch attenuator integrated circuit specific implementation figure.
Fig. 6 is the decaying simulation result diagram that ultra wide band width of the invention mutually compensates digital switch attenuator.
Fig. 7 is the additional phase shift simulation result diagram that ultra wide band width of the invention mutually compensates digital switch attenuator.
Specific embodiment
Below according to attached drawing and preferred embodiment the present invention is described in detail, the objects and effects of the present invention will become brighter
White, below in conjunction with drawings and examples, the present invention will be described in further detail.It should be appreciated that described herein specific
Embodiment is only used to explain the present invention, is not intended to limit the present invention.
As shown in Figure 1, ultra wide band width of the invention, which mutually compensates digital switch attenuator circuit, passes through electricity by n attenuation units
Sense matching cascades, and n attenuation units are using T-type circuit, the bridge-T topological structure with collocation structure for simplifying structure
With any one or more in the π type topological structure with collocation structure.Wherein the structure benefit of low attenuation units is using simplified knot
The T-type circuit of structure, in low attenuation units benefit use the bridge-T topological structure with collocation structure, highly attenuating unit benefit use band
The π type topological structure of collocation structure.
Below for a specific embodiment, which is illustrated.
As one of embodiment, as shown in figure 5, the circuit is decayed by 0.25dB, 0.5dB, 1dB, 2dB, 4dB, 8dB
Unit is cascaded by inductance L1, L2, L3, L4, L5, L6 matching.Wherein 0.25dB, will using the T-type circuit for simplifying structure
Signal port Pb2 in this circuit structure is linked into signal path and is connected with inductance L1.0.5dB, 1dB, 2dB, 4dB use band
The bridge-T topological structure of collocation structure, by this circuit structure the end input signal IN and input signal OUT terminal access electricity
It is connected in road and respectively with inductance.8dB uses the π type topological structure with collocation structure, by the input signal in this circuit structure
It is connected in the end IN and input signal OUT terminal access circuit and with inductance respectively.Attenuation units waterfall sequence be 0.25dB, 0.5dB,
8dB,2dB,4dB,1dB.Highly attenuating unit and low attenuation units are staggered in attenuator of the invention, can effectively improve and decline
Subtract the matching performance of device.The operating frequency range of the attenuator is dc~20GHz, and using 0.25dB as step value, attenuation range exists
0dB~15.75dB realizes 64 kinds of attenuation states.
The bridge-T topological structure with collocation structure is used in conjunction with Fig. 2,0.5dB, 1dB, 2dB, 4dB, the structure is by electricity
Hinder Ra1, Ra2, Ra3, Ra4, Ra5, Ra6, Ra7, Ra8, N-type Metal-Oxide Semiconductor field effect transistor M a1, Ma2,
Ma3, capacitor Ca1 composition.It is IN, OUT, Pa1, Pa2, Pa3 respectively there are five port.Wherein radiofrequency signal input from the port IN into
Enter, is exported from OUT terminal mouth.Pa1, Pa2, Pa3 are the control signal input mouth of transistor.The port IN and resistance Ra2, Ra5
One end, transistor Ma2 drain terminal connect, the other end of resistance Ra2 connects with one end of one end of capacitor Ca1 and Ra3, capacitor
The drain electrode of the other end and Ma1 of Ca1 connects, and the grid and resistance Ra1 of Ma1 connects, the source electrode ground connection of transistor Ma1.Resistance Ra1
The other end and control port Pa1 connect, the source electrode of one end and transistor Ma2 of the resistance Ra3 other end and Ra6 is all and OUT
Port connects, and transistor Ma2 is connected by resistance Ra4 and control port Pa2.The other end of resistance Ra5, resistance Ra6 it is another
The drain electrode at end, transistor Ma3 links together, and the grid of transistor Ma3 is connected to one by resistance Ra7 and control port Pa3
It rises.The source electrode of transistor Ma3 is connected to ground by resistance Ra8.The attenuator includes two kinds of working conditions, and one is bypasses
State, wherein control terminal Pa1 and Pa3 input control signal make transistor Ma1 and Ma3 in an off state, and control terminal Pa2 is defeated
Entering to control signal makes transistor Ma2 in the conductive state.Another state is attenuation state, control terminal Pa1 and Pa3 input control
Signal processed makes transistor Ma1 and Ma3 in the conductive state, and control terminal Pa2 input control signal makes transistor Ma2 be in pass
Disconnected state.Under two states, radio frequency output signal amplitude differs the fixed values such as 0.5dB/1dB/2dB/4dB, phase of output signal
It is almost unchanged.
In conjunction with Fig. 3,0.25dB is using simplified T-type circuit, and the structure is by resistance Rb1, Rb2 and N-type metal-oxide
Object semiconductor field effect transistor Mb1 composition, is Pb1 and Pb2 respectively there are two port, middle port Pb2 is connected to radiofrequency signal
As bypass on access, Pb1 is control signal input, connects resistance Rb1, the grid of the other end connection transistor Mb1 of Rb1
End, the source electrode of drain electrode the connectivity port Pb2, Mb1 of Mb1 connect resistance Rb2, and the other end of resistance Rb2 is connected with ground.Described declines
Subtracting device includes two kinds of working conditions, and one is bypass conditions, at this point, being in transistor Mb1 in port Pb1 input control signal
Off state.Another state is attenuation state, and control terminal Pb1 input control signal keeps transistor Mb1 in the conductive state.Two
Under kind state, radio frequency output signal amplitude differs 0.25dB fixed value, and phase of output signal is almost unchanged.
In conjunction with Fig. 4,8dB uses the π type topological structure with collocation structure, by resistance Rc1, Rc2, Rc3, Rc4, Rc5, Rc6,
Rc7, Rc8, capacitor Cc1, N-type Metal-Oxide Semiconductor field effect transistor M c1, Mc2, Mc3, Mc4 composition.The structure has
Five ports are IN, OUT, Pc1, Pc2, Pc3 respectively.Wherein radiofrequency signal input enters from the port IN, exports from OUT terminal mouth.
Pc1, Pc2, Pc3 are the control signal input mouth of transistor.One end of the port IN and resistance Rc2, transistor Mc2 drain electrode with
And the drain electrode of transistor Mc3 is connected, the other end of resistance Rc2 connects with one end of one end of capacitor Cc1 and Rc3, capacitor Cc1
The drain electrode of the other end and Mc1 connect, the grid of Mc1 and one end of resistance Rc1 connect, the source electrode ground connection of transistor Mc1.Resistance
The other end and control port Pc3 of Rc1 connects, OUT terminal mouth and the other end of resistance Rc3, the source electrode and crystal of transistor Mc2
The drain electrode of pipe Mc4 is connected, and the grid of transistor Mc2 is connected with one end of resistance Rc4, the other end and control terminal Pc2 of resistance Rc4
It is connected, the grid of transistor Mc3 is connected with one end of resistance Rc5, and the grid of transistor Mc4 is connected with one end of resistance Rc6, electricity
The other end of resistance Rc5 is connected with the other end of resistance Rc6 and is connected to control port Pc1, one end of resistance Rc7 and transistor
The source electrode of Mc3 is connected, and the other end ground connection of resistance Rc7, one end of resistance Rc8 is connected with the source electrode of transistor Mc4, resistance Rc8
The other end ground connection.The attenuator includes two kinds of working conditions, and one is bypass conditions, and wherein control terminal Pc1, Pc3 is defeated
Entering to control signal makes transistor Mc1, Mc3 and Mc4 in an off state, and control terminal Pc2 input control signal makes transistor
Mc2 is in the conductive state.Another state is attenuation state, and control terminal Pc1 and Pc3 input signal makes transistor Mc1, Mc3
In the conductive state with Mc4, control terminal Pc2 input control signal makes transistor Mc2 in an off state.Under two states,
Radio frequency output signal amplitude differs 8dB fixed value, and phase of output signal is almost unchanged.
A kind of ultra wide band width of the invention mutually compensates the attenuation results of digital switch attenuator as shown in fig. 6, simulation result
Show in dc-20GHz frequency range, the attenuation accuracy of each attenuation state of the invention is ideal.One kind of the invention
The additional phase shift simulation result of each attenuation state of ultra wide band phase compensation digital switch attenuator is as shown in fig. 7, additional phase shift
It is up to -0.65 ° /+0.35 °, so that the phase effect very little that the attenuator introduces when in use.
It will appreciated by the skilled person that being not used to limit the foregoing is merely the preferred embodiment of invention
System invention, although invention is described in detail referring to previous examples, for those skilled in the art, still
It can modify to the technical solution of aforementioned each case history or equivalent replacement of some of the technical features.It is all
Within the spirit and principle of invention, modification, equivalent replacement for being made etc. be should be included within the protection scope of invention.
Claims (2)
1. a kind of ultra wide band width mutually compensates digital pad circuit, which is characterized in that the circuit is passed through by n attenuation units
Inductance matching cascades, and the n attenuation units are using T-type circuit, the bridge-T with collocation structure for simplifying structure
Any one or more in topological structure and π type topological structure with collocation structure；The T-type circuit of the simplification structure by
Resistance Rb1, Rb2, transistor Mb1 composition, and there are two port Pb1, Pb2, wherein port Pb2 is connected on radio-frequency signal path
As bypass, Pb1 is control signal input, connects one end of resistance Rb1, the grid of the other end connection transistor Mb1 of Rb1
Pole, one end of the source electrode connection resistance Rb2 of drain electrode the connectivity port Pb2, Mb1 of Mb1, the other end ground connection of resistance Rb2.
The bridge-T topological structure with collocation structure by resistance Ra1, Ra2, Ra3, Ra4, Ra5, Ra6, Ra7, Ra8,
Transistor Ma1, Ma2, Ma3, capacitor Ca1 composition, and there are five port, are IN, OUT, Pa1, Pa2, Pa3 respectively, wherein radio frequency
Signal input enters from the port IN, exports from OUT terminal mouth, and Pa1, Pa2, Pa3 are the control signal input mouth of transistor；The end IN
Mouthful connect with the drain electrode of one end of resistance Ra2, Ra5, transistor Ma2, the other end of resistance Ra2 and one end of capacitor Ca1 and
One end of Ra3 connects, and the drain electrode of the other end and Ma1 of capacitor Ca1 connects, and the grid and resistance Ra1 of Ma1 connects, transistor Ma1
Source electrode ground connection.The other end and control port Pa1 of resistance Ra1 connects, one end and crystal of the resistance Ra3 other end and Ra6
The source electrode of pipe Ma2 all connects with OUT terminal mouth, and the grid of transistor Ma2 is connected by resistance Ra4 and control port Pa2.Resistance
The drain electrode of the other end of Ra5, the other end of resistance Ra6, transistor Ma3 links together, and the grid of transistor Ma3 passes through resistance
Ra7 and control port Pa3 link together.The source electrode of transistor Ma3 is grounded by resistance Ra8；
The π type topological structure with collocation structure is by resistance Rc1, Rc2, Rc3, Rc4, Rc5, Rc6, Rc7, Rc8, capacitor
Cc1, transistor Mc1, Mc2, Mc3, Mc4 composition, and be IN, OUT, Pc1, Pc2, Pc3 respectively there are five port, wherein radio frequency
Signal input enters from the port IN, exports from OUT terminal mouth, and Pc1, Pc2, Pc3 are the control signal input mouth of transistor, the end IN
Mouth is connected with one end of resistance Rc2, the drain electrode of transistor Mc2 and the drain electrode of transistor Mc3, the other end and electricity of resistance Rc2
One end of one end and Rc3 for holding Cc1 connects, and the drain electrode of the other end and Mc1 of capacitor Cc1 connects, the grid and resistance of Mc1
One end of Rc1 connects, the source electrode ground connection of transistor Mc1；The other end and control port Pc3 of resistance Rc1 connects, OUT terminal mouth with
The drain electrode of the other end of resistance Rc3, the source electrode of transistor Mc2 and transistor Mc4 is connected, the grid and resistance of transistor Mc2
One end of Rc4 is connected, and the other end of resistance Rc4 is connected with control terminal Pc2, one end phase of the grid and resistance Rc5 of transistor Mc3
Even, the grid of transistor Mc4 is connected with one end of resistance Rc6, and the other end of resistance Rc5 is connected simultaneously with the other end of resistance Rc6
It is connected to control port Pc1, one end of resistance Rc7 is connected with the source electrode of transistor Mc3, the other end ground connection of resistance Rc7, resistance
One end of Rc8 is connected with the source electrode of transistor Mc4, the other end ground connection of resistance Rc8.
2. ultra wide band width according to claim 1 mutually compensates digital pad integrated circuit, which is characterized in that the electricity
Transistor in road is N-type Metal-Oxide Semiconductor field effect transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910496739.9A CN110380708B (en) | 2019-06-10 | 2019-06-10 | Ultra-wideband amplitude-phase compensation digital switch attenuator circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910496739.9A CN110380708B (en) | 2019-06-10 | 2019-06-10 | Ultra-wideband amplitude-phase compensation digital switch attenuator circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110380708A true CN110380708A (en) | 2019-10-25 |
| CN110380708B CN110380708B (en) | 2020-08-11 |
Family
ID=68249957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910496739.9A Active CN110380708B (en) | 2019-06-10 | 2019-06-10 | Ultra-wideband amplitude-phase compensation digital switch attenuator circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110380708B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110830001A (en) * | 2019-11-20 | 2020-02-21 | 南京汇君半导体科技有限公司 | Ultra-wideband attenuator |
| CN111404511A (en) * | 2020-05-19 | 2020-07-10 | 成都天锐星通科技有限公司 | Ultra-wideband high-precision differential attenuator |
| CN112350686A (en) * | 2020-10-31 | 2021-02-09 | 拓维电子科技(上海)有限公司 | Differential numerical control attenuator based on inductance compensation |
| CN113114151A (en) * | 2021-04-29 | 2021-07-13 | 成都天锐星通科技有限公司 | Bandwidth reconfigurable radio frequency attenuator and phased array system |
| CN113114162A (en) * | 2021-03-24 | 2021-07-13 | 中国电子科技集团公司第三十八研究所 | Attenuator circuit for CMOS broadband amplitude-phase multifunctional chip |
| CN113114163A (en) * | 2021-05-28 | 2021-07-13 | 东南大学 | Millimeter wave CMOS numerical control attenuator with innovative structure |
| CN113328729A (en) * | 2021-06-21 | 2021-08-31 | 东南大学 | Passive numerical control attenuator with temperature process angle error compensation function |
| CN116248076A (en) * | 2023-02-24 | 2023-06-09 | 电子科技大学 | High-linearity digital step attenuator with low power consumption logic control |
| CN117176106A (en) * | 2023-09-27 | 2023-12-05 | 中国电子科技集团公司第三十八研究所 | Amplitude phase integrated regulation and control circuit based on resistance attenuation network |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103427781A (en) * | 2013-08-31 | 2013-12-04 | 西安电子科技大学 | Silicone substrate high-linearity low-phase-shift ultra-broad-band digital attenuator |
| CN103441747A (en) * | 2013-08-31 | 2013-12-11 | 西安电子科技大学 | Low-differential-loss low-phase-shift high-integration-level five-level marching type ultra-wide-band numerical control attenuator |
-
2019
- 2019-06-10 CN CN201910496739.9A patent/CN110380708B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103427781A (en) * | 2013-08-31 | 2013-12-04 | 西安电子科技大学 | Silicone substrate high-linearity low-phase-shift ultra-broad-band digital attenuator |
| CN103441747A (en) * | 2013-08-31 | 2013-12-11 | 西安电子科技大学 | Low-differential-loss low-phase-shift high-integration-level five-level marching type ultra-wide-band numerical control attenuator |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021098196A1 (en) * | 2019-11-20 | 2021-05-27 | 南京汇君半导体科技有限公司 | Ultra-wideband attenuator |
| CN110830001A (en) * | 2019-11-20 | 2020-02-21 | 南京汇君半导体科技有限公司 | Ultra-wideband attenuator |
| CN111404511A (en) * | 2020-05-19 | 2020-07-10 | 成都天锐星通科技有限公司 | Ultra-wideband high-precision differential attenuator |
| CN112350686B (en) * | 2020-10-31 | 2023-03-24 | 拓维电子科技(上海)有限公司 | Differential numerical control attenuator based on inductance compensation |
| CN112350686A (en) * | 2020-10-31 | 2021-02-09 | 拓维电子科技(上海)有限公司 | Differential numerical control attenuator based on inductance compensation |
| CN113114162A (en) * | 2021-03-24 | 2021-07-13 | 中国电子科技集团公司第三十八研究所 | Attenuator circuit for CMOS broadband amplitude-phase multifunctional chip |
| CN113114151A (en) * | 2021-04-29 | 2021-07-13 | 成都天锐星通科技有限公司 | Bandwidth reconfigurable radio frequency attenuator and phased array system |
| CN113114163A (en) * | 2021-05-28 | 2021-07-13 | 东南大学 | Millimeter wave CMOS numerical control attenuator with innovative structure |
| CN113114163B (en) * | 2021-05-28 | 2023-08-18 | 东南大学 | Millimeter wave CMOS digital control attenuator with innovative structure |
| CN113328729A (en) * | 2021-06-21 | 2021-08-31 | 东南大学 | Passive numerical control attenuator with temperature process angle error compensation function |
| CN113328729B (en) * | 2021-06-21 | 2022-10-25 | 东南大学 | Passive numerical control attenuator with temperature process angle error compensation function |
| CN116248076A (en) * | 2023-02-24 | 2023-06-09 | 电子科技大学 | High-linearity digital step attenuator with low power consumption logic control |
| CN116248076B (en) * | 2023-02-24 | 2024-04-02 | 电子科技大学 | High-linearity digital step attenuator with low power consumption logic control |
| CN117176106A (en) * | 2023-09-27 | 2023-12-05 | 中国电子科技集团公司第三十八研究所 | Amplitude phase integrated regulation and control circuit based on resistance attenuation network |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110380708B (en) | 2020-08-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110380708A (en) | A kind of ultra wide band width mutually compensates digital switch attenuator circuit | |
| KR102244796B1 (en) | Quasi-differential rf power amplifier with high level of harmonics rejection | |
| CN103427781A (en) | Silicone substrate high-linearity low-phase-shift ultra-broad-band digital attenuator | |
| CN107911086A (en) | The radio-frequency power amplifier and radio frequency communication terminal of a kind of high linearity | |
| CN111082765B (en) | Ultra-wideband two-position phase shifter | |
| CN104078736A (en) | Miniaturized wideband power splitter circuit | |
| CN104852706A (en) | Low additional phase shift digital attenuator | |
| CN107707218A (en) | The embedded five-digit number control attenuator of switch based on low-pass filter network | |
| CN103441747A (en) | Low-differential-loss low-phase-shift high-integration-level five-level marching type ultra-wide-band numerical control attenuator | |
| CN110324023A (en) | A kind of low phase error digital pad of ultra wide band based on parallel capacitive compensation | |
| CN113114162A (en) | Attenuator circuit for CMOS broadband amplitude-phase multifunctional chip | |
| CN103066977B (en) | Low-pass high-isolation intelligent radio frequency (RF) switch | |
| CN110445471B (en) | Dual-band reconfigurable radio frequency power amplifier and control method thereof | |
| CN102403973B (en) | Microwave and millimeter wave ultra-wideband low-phase-shift six-digit digital attenuator | |
| CN114337710B (en) | Gain switching circuit for receiving radio frequency signal and radio frequency receiver | |
| Shao et al. | Design of broadband GaN doherty power amplifiers | |
| KR102670636B1 (en) | Power distributors, regulation methods, power distribution methods, storage media and electronic devices | |
| CN108494375A (en) | A kind of distributed power amplifier of integrated reconfigurable notch filter | |
| CN209375595U (en) | The numerical control attenuation circuit of low pass matched Larger Dynamic constant phase | |
| CN102394590B (en) | Program-controlled variable 5-bit reciprocal microwave monolithic integrated attenuator | |
| KR20210073746A (en) | Ultra High Frequency Traveling Wave Switch using GaN Transistor | |
| CN206225505U (en) | A kind of accelerator Stochastic Cooling System wideband digital adjustable phase shifter | |
| CN116707503B (en) | Single-pole double-throw switch circuit, working method and electronic equipment | |
| Bentini et al. | An ultra-broadband 2–8 GHz GaN HEMT MMIC active combiner | |
| Ng-Molina et al. | Band-pass distributed power amplifier in monolithic technology for the LTE band |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230330 Address after: 316000 Room 202, 11 Baichuan Road, Lincheng street, Dinghai District, Zhoushan City, Zhejiang Province (centralized office) Patentee after: ZHEJIANG JISU HEXIN TECHNOLOGY CO.,LTD. Address before: 310058 Yuhang Tang Road, Xihu District, Hangzhou, Zhejiang 866 Patentee before: ZHEJIANG University |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230627 Address after: Plant 1, No. 13, Guiyang Avenue, Yantai Economic and Technological Development Zone, Shandong Province, 264000 Patentee after: Yantai Xin Yang Ju Array Microelectronics Co.,Ltd. Address before: 316000 Room 202, 11 Baichuan Road, Lincheng street, Dinghai District, Zhoushan City, Zhejiang Province (centralized office) Patentee before: ZHEJIANG JISU HEXIN TECHNOLOGY CO.,LTD. |