CN110365359A - Radio frequency front-end device and electronic equipment - Google Patents
Radio frequency front-end device and electronic equipment Download PDFInfo
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- CN110365359A CN110365359A CN201910656441.XA CN201910656441A CN110365359A CN 110365359 A CN110365359 A CN 110365359A CN 201910656441 A CN201910656441 A CN 201910656441A CN 110365359 A CN110365359 A CN 110365359A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/401—Circuits for selecting or indicating operating mode
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- Computer Networks & Wireless Communication (AREA)
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Abstract
This application discloses a kind of radio frequency front-end device and electronic equipment, device includes: the first radio frequency path；Second radio frequency path；First radio-frequency module, first radio-frequency module includes the first 5G amplification mould group, medium-high frequency amplification mould group and first switch mould group, first 5G amplifies mould group and connects the second radio frequency path, and medium-high frequency amplifies mould group and connects the first radio frequency path and the second radio frequency path by first switch mould group；Second radio-frequency module, second radio-frequency module includes the 2nd 5G amplification mould group, low frequency amplification mould group and second switch mould group, 2nd 5G amplifies mould group and connects the second radio frequency path, and low frequency amplifies mould group and connects the first radio frequency path and the second radio frequency path by second switch mould group.Difference EN-DC combination configuration between 4G and 5G refarming frequency range can be realized in the case where not increasing radio-frequency channel quantity as a result,.
Description
Technical field
This application involves field of communication technology more particularly to a kind of radio frequency front-end devices and electronic equipment.
Background technique
It is defined as within 2019 the 5G communication first year, the major common carrier in the whole world also formally pulls open 5G mobile communication in this year
The construction of network, due to consideration that 5G SA (stand alone, independence networking) cost is too high, domestic and international overwhelming majority operator
Select use NSA (Non-standalone, dependent networking) namely EN-DC (E-UTRA and New radio early period
The dual link that Dual Connectivity, 4G wireless access network and 5G newly eat dishes without rice or wine) form.Before EN-DC means entire radio frequency
End-rack structure will become more complicated, at the same some operators propose to the frequency range of traditional 600MHz~2700MHz frequency band into
Row refarming, the design difficulty of mobile terminal radio frequency front end structure will be further increased in this.
Summary of the invention
The purpose of the application is to propose that a kind of radio frequency front-end device, low frequency amplify mould group and medium-high frequency amplification mould group
Different radio frequency paths may be selected by switching molding group, so that the different EN- between 4G and 5G refarming frequency range can be realized
DC combination configuration.
Further object is to propose a kind of electronic equipment.
In order to achieve the above object, the application first aspect embodiment proposes a kind of radio frequency front-end device, comprising: the first radio frequency is logical
Road；Second radio frequency path；First radio-frequency module, first radio-frequency module include the first 5G amplification mould group, medium-high frequency amplification mould
Group and first switch mould group, wherein the first 5G amplification mould group connects second radio frequency path, and the medium-high frequency amplifies mould
Group connects first radio frequency path and second radio frequency path, the first switch mould group by the first switch mould group
First radio frequency path or second radio frequency path are connected for controlling the medium-high frequency amplification mould group；Second radio frequency mould
Block, second radio-frequency module include the 2nd 5G amplification mould group, low frequency amplification mould group and second switch mould group, wherein described the
Two 5G amplify mould group and connect second radio frequency path, and the low frequency amplification mould group passes through described in second switch mould group connection
First radio frequency path and second radio frequency path, the second switch mould group connect institute for controlling the low frequency amplification mould group
State the first radio frequency path or second radio frequency path.
According to the embodiment of the present application propose radio frequency front-end device, the first radio-frequency module include the first 5G amplification mould group, in
High frequency amplification mould group and first switch mould group, wherein the first 5G amplifies mould group and connects the second radio frequency path, and medium-high frequency amplifies mould group
The first radio frequency path and the second radio frequency path are connected by first switch mould group, first switch mould group is for controlling medium-high frequency amplification
Mould group connects the first radio frequency path or the second radio frequency path, and the second radio-frequency module includes the 2nd 5G amplification mould group, low frequency amplification mould
Group and second switch mould group, wherein the 2nd 5G amplifies mould group and connects the second radio frequency path, and low frequency amplification mould group passes through second switch
Mould group connects the first radio frequency path and the second radio frequency path, and second switch mould group is penetrated for controlling low frequency amplification mould group connection first
Frequency access or the second radio frequency path.The radio frequency front-end device of the embodiment of the present application as a result, by the way that low frequency is amplified mould group and middle height
Frequency amplification mould splits from, and low frequency amplification mould group and medium-high frequency amplification Mo Zu pass through second switch mould group and first switch respectively
Mould group connects different radio frequency paths, and two groups of 5G are arranged and amplify mould group, and 5G amplifies mould group and connects the second radio frequency path, thus,
It can realize that the different EN-DC combination between 4G and 5G refarming frequency range is matched in the case where not increasing radio-frequency channel quantity
It sets, also, under every kind of EN-DC combination, radio-frequency transmissions access, which is separated from each other, to come, so that two kinds of frequency ranges being capable of work simultaneously
Make, and does not conflict mutually.
According to one embodiment of the application, the radio frequency front-end device, further includes: the first supply access, described
One supply access is connected with first radio-frequency module, to power to first radio-frequency module；Second supply access, described
Two supply accesses are connected with second radio-frequency module, to power to second radio-frequency module.
According to one embodiment of the application, the first 5G amplification mould group includes the 2nd 5G amplification module, and described second
5G amplification module connects second radio frequency path, and the 2nd 5G amplification mould group includes that the first 5G amplification module and the 3rd 5G are put
Big module, the first 5G amplification module and the 3rd 5G amplification module are all connected with second radio frequency path, wherein described first
5G amplification module and the 2nd 5G amplification module support same 5G frequency range.
According to one embodiment of the application, the first 5G amplification module and the 2nd 5G amplification module support N78
Frequency range or N77 frequency range or N79 frequency range, the 3rd 5G amplification module support N41 frequency range.
According to one embodiment of the application, under independence networking mode, the 2nd 5G amplification module connection described the
Two radio frequency paths or the first 5G amplification module be connected to second radio frequency path with carry out N78 frequency range or N77 frequency range or
The 5G of N79 frequency range is communicated, while the 3rd 5G amplification module is connected to second radio frequency path or passes through the first switch
Mould group controls the medium-high frequency amplification mould group and connects second radio frequency path, to carry out the 5G communication of N41 frequency range.
According to one embodiment of the application, medium-high frequency amplification mould group includes intermediate frequency amplifier and high-frequency amplifier,
The first switch mould group includes first switch and the second switch, wherein the first contact of the first switch and the intermediate frequency
Amplifier is connected, and the second contact of the first switch connects first radio frequency path, the third contact of the first switch
Second radio frequency path is connected, the first switch controls the intermediate frequency amplifier and connects first radio frequency path or described
First contact of the second radio frequency path, the second switch is connected with the high-frequency amplifier, the second touching of the second switch
Point connects first radio frequency path, and the third contact of the second switch connects second radio frequency path, and described second opens
It closes and controls high-frequency amplifier connection first radio frequency path or second radio frequency path；The low frequency amplifies mould group packet
Include low-frequency amplifier, the second switch mould group includes third switch, wherein the first contact of the third switch with it is described low
Audio amplifier is connected, and the second contact of the third switch connects first radio frequency path, the third touching of the third switch
Point connects second radio frequency path, and low-frequency amplifier described in the third switch control connects first radio frequency path or institute
State the second radio frequency path.
According to one embodiment of the application, under dependent networking model, institute is controlled by the second switch mould group
It states low frequency amplification mould group and connects first radio frequency path, and the medium-high frequency is controlled by the first switch mould group and amplifies mould
Group connects second radio frequency path, so that low frequency amplification mould group and medium-high frequency amplification mould group work simultaneously,
First radio frequency path is connected alternatively, controlling the medium-high frequency by the first switch mould group and amplifying mould group, and passes through institute
State second switch mould group and control low frequency amplification mould group and connect second radio frequency path so that low frequency amplification mould group and
The medium-high frequency amplification mould group works simultaneously, wherein the low frequency amplification mould group or medium-high frequency amplification mould group are used
In progress 5G communication.
According to one embodiment of the application, under dependent networking model, institute is controlled by the first switch mould group
It states medium-high frequency amplification mould group and connects first radio frequency path, and the 2nd 5G amplification mould group connection second radio frequency is logical
Road, so that medium-high frequency amplification mould group and the 2nd 5G amplification mould group work simultaneously, wherein the 2nd 5G amplification
Mould group is for carrying out 5G communication.
According to one embodiment of the application, under dependent networking model, institute is controlled by the second switch mould group
It states low frequency amplification mould group and connects first radio frequency path, and the first 5G amplification mould group connects second radio frequency path,
So that the low frequency amplification mould group and the first 5G amplification mould group work simultaneously, wherein the first 5G amplifies mould group
For carrying out 5G communication.
In order to achieve the above object, the application second aspect embodiment proposes a kind of electronic equipment, including the application first aspect
Radio frequency front-end device described in embodiment.
According to the electronic equipment that the embodiment of the present application proposes, by the radio frequency front-end device of setting, low frequency is amplified into mould group
With medium-high frequency amplification mould splits from, and low frequency amplification mould group and medium-high frequency amplification mould group can respectively by second switch mould group and
First switch mould group connects different radio frequency paths, and two groups of 5G are arranged and amplify mould group, and it is logical that 5G amplifies mould group the second radio frequency of connection
Road, thus, the different EN- between 4G and 5G refarming frequency range can be realized in the case where not increasing radio-frequency channel quantity
DC combination configuration, also, under every kind of EN-DC combination, radio-frequency transmissions access, which is separated from each other, to come, so that two kinds of frequency ranges can
It works at the same time, and does not conflict mutually.
Detailed description of the invention
Fig. 1 is the block diagram according to the radio frequency front-end device of the embodiment of the present application；
Fig. 2 is the block diagram according to the radio frequency front-end device of the application one embodiment；
Fig. 3 is the block diagram according to the radio frequency front-end device of the application another embodiment.
Specific embodiment
Embodiments herein is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to for explaining the application, and should not be understood as the limitation to the application.
The application is proposed low frequency PAMID (low frequency amplifies mould group) and medium-high frequency PAMID (medium-high frequency amplifies mould group) respectively
It hangs on different ET (Envelop tracking, envelope tracking) supply access, while low frequency PAMID and medium-high frequency PAMID
Different transmitting paths can be selected by RF switch, also (5G new radio, 5G is newly empty by two groups of 5G amplification mould group NR
Mouthful) in PA one group hang over same ET supply access, another group and medium-high frequency in two groups of 5G amplification mould group NR PA with low frequency PAMID
PAMID hangs over another ET supply access, thus, 4G and 5G can be realized in the case where not increasing radio-frequency channel quantity
Different EN-DC between refarming frequency range combine configuration, and under every kind of EN-DC combination, radio-frequency transmissions access is separated from each other
Come, two kinds of frequency ranges is worked at the same time, and do not conflict mutually.
Below with reference to the accompanying drawings the radio frequency front-end device and electronic equipment of the embodiment of the present application is described in detail.
Fig. 1 is the block diagram according to the radio frequency front-end device of the embodiment of the present application.As shown in Figure 1, the application is implemented
The radio frequency front-end device 100 of example includes the first radio frequency path 10, the second radio frequency path 20, the first radio-frequency module 30 and the second radio frequency
Module 40.
Wherein, the first radio-frequency module 30 includes the first 5G amplification mould group 31, medium-high frequency amplification mould group 32 and first switch mould
Group 33, wherein the first 5G amplifies mould group 31 and connects the second radio frequency path 20, and medium-high frequency amplifies mould group 32 and passes through first switch mould group
33 the first radio frequency paths 10 of connection and the second radio frequency path 20, first switch mould group 33 connect for controlling medium-high frequency amplification mould group 32
Logical first radio frequency path 10 or the second radio frequency path 20；Second radio-frequency module 40 includes the 2nd 5G amplification mould group 41, low frequency amplification
Mould group 42 and second switch mould group 43, wherein the 2nd 5G amplifies mould group 41 and connects the second radio frequency path 20, and low frequency amplifies mould group 42
The first radio frequency path 10 and the second radio frequency path 20 are connected by second switch mould group 43, second switch mould group 43 is low for controlling
Frequency amplification mould group 42 connects the first radio frequency path 10 or the second radio frequency path 20.
It is understood that the first 5G amplification mould group 31 can transmit 5G signal by the second radio frequency path 20, medium-high frequency amplifies mould group
32 can transmit medium-high frequency letter by the first radio frequency path 10 or the second radio frequency path 20 under the control of first switch mould group 33
The high frequency signal of number such as LTE frequency range, the 2nd 5G, which amplifies mould group 41 and can pass through the second radio frequency path 20, transmits 5G signal, low frequency
Amplifying mould group 42 can be transmitted under the control of second switch mould group 43 by the first radio frequency path 10 or the second radio frequency path 20
The low frequency signal of low frequency signal such as LTE frequency range.
Further, according to one embodiment of the application, as Figure 2-3, radio frequency front-end device 100 further include: the
One supply access 50 and the second supply access 60, the first supply access 50 are connected with the first radio-frequency module 30, to give the first radio frequency
Module 30 is powered；Second supply access 60 is connected with the second radio-frequency module 40, to power to the second radio-frequency module 40.
Wherein, the first supply access 50 and the second supply access 60 are operable with ET mode, that is to say, that the first power supply is logical
Road 50 and the second supply access 60 can be ET supply access.
It should be noted that may include power management chip on the first supply access 50 and the second supply access 60, first
The operating mode of supply access 50 and the second supply access 60 includes that (Average power tracking is put down by ET mode and APT
Equal powerinjected method) mode, wherein ET mode power saving the most, APT mode takes second place.First supply access 50 and the second supply access 60
It can work in ET mode, can also work in APT mode, exist in the first supply access 50 or the work of the second supply access 60
Connection digital analog converter is needed when ET mode, on supply access, also to realize that envelope is tracked.
As a result, by separating the supply access that low frequency amplifies mould group 42 with medium-high frequency amplifies mould group 32, i.e., the first power supply
Access 50 is powered to medium-high frequency amplification mould group 32, and the second supply access 60 is powered to low frequency amplification mould group 42, meanwhile, low frequency amplification
Mould group 42 connects different radio frequencies by second switch mould group 43 and first switch mould group 33 respectively from medium-high frequency amplification mould group 32
Access, also, the 2nd 5G amplification mould group 41 and low frequency amplification mould group 42 hang over same ET supply access i.e. the first supply access 50,
It powers that is, the first supply access 50 returns the 2nd 5G amplification mould group 41, the first 5G amplifies mould group 31 and medium-high frequency is amplified
Mould group 32 hangs over another ET supply access i.e. the second supply access 60, that is to say, that the second supply access 60 is returned the first 5G and put
Big mould group 31 is powered, thus, 4G and 5G can be realized in the case where not increasing radio-frequency channel quantity and supply access
Different EN-DC between refarming frequency range combine configuration, and under every kind of EN-DC combination, radio-frequency transmissions access is separated from each other
Come, two kinds of frequency ranges is worked at the same time, and do not conflict mutually.
Specifically, according to one embodiment of the application, as Figure 2-3, it includes the 2nd 5G that the first 5G, which amplifies mould group 31,
Amplification module NR2, the 2nd the second radio frequency path of 5G amplification module NR2 connection 20, the 2nd 5G amplification mould group 41 include that the first 5G is put
Big module NR1 and the 3rd 5G amplification module NR3, the first 5G amplification module NR1 and the 3rd 5G amplification module NR3 is all connected with second and penetrates
Frequency access 20, wherein the first 5G amplification module NR1 and the 2nd 5G amplification module NR2 supports same 5G frequency range.
It should be noted that the first 5G amplification module NR1 and the 3rd 5G amplification module NR3 are integrally disposed in the 2nd 5G amplification
In mould group 41.
Wherein, the first 5G amplification module NR1 and the 2nd 5G amplification module NR2 supports N78 frequency range or N77 frequency range or N79
Frequency range, the 3rd 5G amplification module NR3 support N41 frequency range.
That is, the first 5G amplification module NR1 and the 2nd 5G amplification module NR2 can be transmitted by the second radio frequency path 20
The 5G signal of N78 frequency range or N77 frequency range or N79 frequency range, the 3rd 5G amplification module NR3 can be transmitted by the second radio frequency path 20
The 5G signal of N41 frequency range.
Further, according to one embodiment of the application, as Figure 2-3, it includes intermediate frequency that medium-high frequency, which amplifies mould group 32,
Amplifier 320 and high-frequency amplifier 321, first switch mould group 33 include first switch 330 and second switch 331, wherein first
First contact of switch 330 is connected with intermediate frequency amplifier 320, and the second contact of first switch 330 connects the first radio frequency path 10,
The third contact of first switch 330 connects the second radio frequency path 20, and first switch 330 controls intermediate frequency amplifier 320 and connects first
Radio frequency path 10 or the second radio frequency path 20, the first contact of second switch 331 are connected with high-frequency amplifier 321, second switch
331 the second contact connects the first radio frequency path 10, and the third contact of second switch 331 connects the second radio frequency path 20, the
Two switches 331 control high-frequency amplifier 321 and connect the first radio frequency path 10 or the second radio frequency path 20；Low frequency amplifies mould group 42 and wraps
Include low-frequency amplifier 420, second switch mould group 43 includes third switch 430, wherein the first contact of third switch 430 with it is low
Audio amplifier 420 is connected, and the second contact of third switch 430 connects the first radio frequency path 10, the third contact of third switch 430
The second radio frequency path 20 is connected, third switch 430 controls the first radio frequency path 10 of connection of low-frequency amplifier 420 or the second radio frequency is logical
Road 20.
It should be noted that first switch 330, second switch 331 and third switch 430 can be single pole multiple throw.
It is understood that intermediate frequency amplifier 320 can pass through the first radio frequency path 10 or the second under the control of first switch 330
20 transmission intermediate frequency signal of radio frequency path, for example, the first radio frequency path 10, intermediate frequency amplification are connected in the second contact of first switch 330
Device 320 connects the second radio frequency path 20 by 10 transmission intermediate frequency signal of the first radio frequency path, the third contact of first switch 330,
Intermediate frequency amplifier 320 passes through 20 transmission intermediate frequency signal of the second radio frequency path, under the control of second switch 331, high-frequency amplifier
321 can transmit high-frequency signal by the first radio frequency path 10 or the second radio frequency path 20, for example, the second of second switch 331 touches
Point connects the first radio frequency path 10, and high-frequency amplifier 321 transmits high-frequency signal, second switch 331 by the first radio frequency path 10
Third contact connect the second radio frequency path 20, high-frequency amplifier 321 transmits high-frequency signal by the second radio frequency path 20, the
Under the control of three switches 430, low-frequency amplifier 420 can transmit low frequency letter by the first radio frequency path 10 or the second radio frequency path 20
Number, for example, the first radio frequency path 10 is connected in the second contact of third switch 430, low-frequency amplifier 420 passes through the first radio frequency path
The second radio frequency path 20 is connected in 10 transmission low frequency signals, the third contact of third switch 430, and low-frequency amplifier 420 passes through second
Radio frequency path 20 transmits low frequency signal.
According to one embodiment of the application, under independence networking mode, the 2nd 5G amplification module NR2 is connected to the second radio frequency
Access 20 or the first 5G amplification module NR1 are connected to the second radio frequency path 20 to carry out N78 frequency range or N77 frequency range or N79 frequency range
5G communication, while the 3rd 5G amplification module NR3 is connected to the second radio frequency path 20 or by high in the control of first switch mould group 33
Frequency amplification mould group 32 connects the second radio frequency path 20, to carry out the 5G communication of N41 frequency range.It is understood that in SA independence networking mode
Lower 5G frequency range can support two-way to emit, i.e., two-way works at the same time, and in other words, can support to carry out N78 frequency range and N41 frequency simultaneously
Section or N77 frequency range communicated with N41 frequency range or N79 frequency range with the 5G of N41 frequency range, that is to say, that the 2nd 5G amplification module NR2 with
One in first 5G amplification module NR1 can be simultaneously with one in the 3rd 5G amplification module NR3 and medium-high frequency amplification mould group 32
Connect the second radio frequency path 20, with carry out simultaneously N78 frequency range and N41 frequency range or N77 frequency range and N41 frequency range or N79 frequency range with
The 5G of N41 frequency range is communicated.
Specifically, the configuration that may be implemented under 5G SA mode (5G independence networking mode) is as shown in table 1 below:
Table 1
Wherein, TX1 indicates to connect the second radio frequency path 20, and X expression is not switched on radio frequency path, and n41 indicates N41 frequency range
5G communication, n78 indicate the 5G communication of N78 or N77 or N79 frequency range.
It is understood that High frequency amplification mould group 32 connects the second radio frequency path 20 in the middle or the 3rd 5G amplification module NR3 is connected
When the second radio frequency path 20, the 5G that medium-high frequency amplification mould group 32 or the 3rd 5G amplification module NR3 can carry out N41 frequency range is logical
Letter.When the 2nd 5G amplification module NR2 is connected to the second radio frequency path 20 or the first 5G amplification module NR1 the second radio frequency path 20 of connection
When, the 2nd 5G amplification module NR2 or the first 5G amplification module NR1 can carry out N78 frequency range or N77 frequency range or N79 frequency range
5G communication.
The N41 frequency under 5G independence networking mode can be realized in the case where not increasing radio frequency path and supply access as a result,
The 5G communication of section and N78 frequency range or N77 frequency range or N79 frequency range.
Further, according to one embodiment of the application, under dependent networking model, pass through second switch mould group 43
It controls low frequency amplification mould group 42 and connects the first radio frequency path 10, and medium-high frequency is controlled by first switch mould group 33 and amplifies mould group 32
The second radio frequency path 20 is connected, so that low frequency amplification mould group 42 and medium-high frequency amplification mould group 32 work simultaneously, alternatively, passing through
First switch mould group 33 controls medium-high frequency amplification mould group 32 and connects the first radio frequency path 10, and is controlled by second switch mould group 43
Low frequency amplifies mould group 42 and connects the second radio frequency path 20, so that low frequency amplification mould group 42 and medium-high frequency amplification mould group 32 carry out simultaneously
Work, wherein low frequency amplification mould group 42 or medium-high frequency amplification mould group 32 are for carrying out 5G communication.
That is, low frequency amplifies mould when low frequency amplifies mould group 42 and medium-high frequency amplification mould group 32 is worked simultaneously
One in group 42 and medium-high frequency amplification mould group 32 is used to carry out 5G communication, another is for carrying out LTE communication.
Further, according to one embodiment of the application, under dependent networking model, pass through first switch mould group 33
It controls medium-high frequency amplification mould group 32 and connects the first radio frequency path 10, and the 2nd 5G amplification mould group 41 connects the second radio frequency path 20,
So that medium-high frequency amplification mould group 32 and the 2nd 5G amplification mould group 41 work simultaneously, wherein the 2nd 5G amplification mould group 41 is used for
Carry out 5G communication.
Specifically, under dependent networking model, medium-high frequency is controlled by first switch mould group 33 and amplifies the connection of mould group 32
First radio frequency path 10, and the first 5G amplification module NR1 connects the second radio frequency path 20, so that medium-high frequency amplification mould group 32 and the
One 5G amplification module NR1 works simultaneously, wherein the first 5G amplification module NR1 for carry out N78 frequency range or N77 frequency range,
Or the 5G communication of N79 frequency range, medium-high frequency amplification mould group 32 is for carrying out LTE communication.
Alternatively, under dependent networking model, medium-high frequency is controlled by first switch mould group 33 amplifies mould group 32 and connect the
One radio frequency path 10, and, the 3rd 5G amplification module NR3 connects the second radio frequency path 20, so that medium-high frequency amplifies 32 He of mould group, the
Three 5G amplification module NR3 work simultaneously, wherein and the 3rd 5G amplification module NR3 is used to carry out the 5G communication of N41 frequency range, in
High frequency amplification mould group 32 is for carrying out LTE communication.
Further, according to one embodiment of the application, under dependent networking model, pass through second switch mould group 43
It controls low frequency amplification mould group 42 and connects the first radio frequency path 10, and the first 5G amplification mould group 31 connects the second radio frequency path 20, with
Make low frequency amplification mould group 42 and the first 5G amplification mould group 31 while working, wherein the first 5G amplification mould group 31 is for carrying out
5G communication.
Specifically, under dependent networking model, low frequency is controlled by second switch mould group 43 amplify mould group 42 and connect the
One radio frequency path 10, and the 2nd 5G amplification module NR2 connects the second radio frequency path 20, so that low frequency amplification mould group 42 and the 2nd 5G
Amplification module NR2 works simultaneously, wherein the 2nd 5G amplification module NR2 is for carrying out N78 frequency range or N77 frequency range or N79
The 5G of frequency range is communicated, and low frequency amplification mould group 42 is for carrying out LTE communication.
Specifically, the configuration that may be implemented under 5G NSA mode (5G dependent networking model) is as shown in table 2 below:
Table 2
Wherein, TX1 indicates to connect the second radio frequency path 20, and TX0 indicates to connect the first radio frequency path 10, and X expression does not connect
Logical radio frequency path, MHB+LB (NR) ENDC indicate that medium-high frequency amplification mould group 32 is worked at the same time with low frequency amplification mould group 42, wherein in
High frequency amplification mould group 32 is indicated for carrying out LET communication, low frequency amplification mould group 42 for carrying out 5G communication, LB+MHB (NR) ENDC
Medium-high frequency is amplified mould group 32 and is worked at the same time with low frequency amplification mould group 42, wherein and low frequency amplification mould group 42 is used to carry out LET communication,
Medium-high frequency amplification mould group 32 indicates low frequency amplification mould group 42 and the 2nd 5G amplification module NR2 for carrying out 5G communication, DC_LB-n78
Work at the same time, wherein low frequency amplification mould group 42 for carrying out LET communication, the 2nd 5G amplification module NR2 for carry out N78 frequency range,
Or the 5G communication of N77 frequency range or N79 frequency range, DC_MHB-n78 indicate medium-high frequency amplification mould group 32 and the first 5G amplification module NR1
It works at the same time, wherein medium-high frequency amplification mould group 32 is for carrying out LET communication, and the first 5G amplification module NR1 is for carrying out N78 frequency
The 5G of section or N77 frequency range or N79 frequency range communication, DC_MHB-n41 indicate medium-high frequency amplification mould group 32 and the 3rd 5G amplification module
NR3 is worked at the same time, wherein medium-high frequency amplification mould group 32 is for carrying out LET communication, and the 3rd 5G amplification module NR3 is for carrying out N41
The 5G of frequency range is communicated.
It is understood that when low frequency amplification mould group 42 connects the first radio frequency path 10, medium-high frequency amplification mould group 32 is connected second and is penetrated
When frequency access 20, low frequency amplification mould group 42 and medium-high frequency amplification mould group 32 can work simultaneously, wherein medium-high frequency amplifies mould group
32 can be used for carrying out LET communication, low frequency amplification mould group 42 can be used for carrying out 5G communication or medium-high frequency amplification mould group 32 be used for into
Row 5G communication, low frequency amplification mould group 42 is for carrying out LET communication, that is to say, that low frequency amplifies mould group 42 and medium-high frequency amplifies mould
One in group 32 is used to carry out 5G communication, another is for carrying out LET communication.
When low frequency amplification mould group 42 connects the second radio frequency path 20, medium-high frequency amplifies mould group 32 and connects the first radio frequency path 10
When, low frequency amplification mould group 42 and medium-high frequency amplification mould group 32 can work simultaneously, wherein medium-high frequency amplification mould group 32 can be used for
LET communication is carried out, low frequency amplification mould group 42 can be used for carrying out 5G communication or medium-high frequency amplification mould group 32 is logical for carrying out 5G
Letter, low frequency amplification mould group 42 is for carrying out LET communication, that is to say, that low frequency amplifies in mould group 42 and medium-high frequency amplification mould group 32
One for carrying out 5G communication, another is for carrying out LET communication.
When low frequency amplification mould group 42 connects the first radio frequency path 10, the 2nd 5G amplification module NR2 connects the second radio frequency path
When 20, low frequency amplification mould group 42 and the 2nd 5G amplification module NR2 work simultaneously, wherein low frequency amplify mould group 42 for into
Row LET communication, the 2nd 5G amplification module NR2 are used to carry out the 5G communication of N78 frequency range or N77 frequency range or N79 frequency range.
High frequency amplification mould group 32 connects the first radio frequency path 10 in the middle, and it is logical that the first 5G amplification module NR1 connects the second radio frequency
When road 20, medium-high frequency amplification mould group 32 and the first 5G amplification module NR1 works simultaneously, wherein medium-high frequency amplifies mould group 32
For carrying out LET communication, the first 5G amplification module NR1 is used to carry out the 5G communication of N78 frequency range or N77 frequency range or N79 frequency range.
High frequency amplification mould group 32 connects the first radio frequency path 10 in the middle, and it is logical that the 3rd 5G amplification module NR3 connects the second radio frequency
When road 20, medium-high frequency amplification mould group 32 and the 3rd 5G amplification module NR3 works simultaneously, wherein medium-high frequency amplifies mould group 32
For carrying out LET communication, the 3rd 5G amplification module NR3 is used to carry out the 5G communication of N41 frequency range.
As a result, in the case where not increasing radio frequency path and supply access realize dependent networking model under 4G and
Different EN-DC between 5Grefarming frequency range combine configuration.
To sum up, the radio frequency front-end device proposed according to the embodiment of the present application, the first radio-frequency module include that the first 5G amplifies mould
Group, medium-high frequency amplification mould group and first switch mould group, wherein the first 5G amplifies mould group and connects the second radio frequency path, and medium-high frequency is put
Big mould group connects the first radio frequency path and the second radio frequency path by first switch mould group, and first switch mould group is for high in controlling
Frequency amplification mould group connects the first radio frequency path or the second radio frequency path, and the second radio-frequency module includes that the 2nd 5G amplifies mould group, low frequency
Amplify mould group and second switch mould group, wherein the 2nd 5G amplifies mould group and connects the second radio frequency path, and low frequency amplifies mould group by the
Two switching molding groups connect the first radio frequency path and the second radio frequency path, and second switch mould group is connected for controlling low frequency amplification mould group
First radio frequency path or the second radio frequency path.The radio frequency front-end device of the embodiment of the present application as a result, by the way that low frequency is amplified mould group
With medium-high frequency amplification mould splits from and low frequency amplification mould group and medium-high frequency amplification Mo Zu pass through second switch mould group and the respectively
One switching molding group connects different radio frequency paths, and two groups of 5G are arranged and amplify mould group, and 5G amplifies mould group and connects the second radio frequency path,
To realize the different EN-DC groups between 4G and 5G refarming frequency range in the case where not increasing radio-frequency channel quantity
Configuration is closed, also, under every kind of EN-DC combination, radio-frequency transmissions access, which is separated from each other, to come, so that two kinds of frequency ranges can be simultaneously
Work, and do not conflict mutually.
Radio frequency front-end device based on the above embodiment, the embodiment of the present application also proposed a kind of electronic equipment, including preceding
The radio frequency front-end device stated.
According to the electronic equipment that the embodiment of the present application proposes, by the radio frequency front-end device of setting, low frequency is amplified into mould group
With medium-high frequency amplification mould splits from, and low frequency amplification mould group and medium-high frequency amplification mould group can respectively by second switch mould group and
First switch mould group connects different radio frequency paths, and two groups of 5G are arranged and amplify mould group, and it is logical that 5G amplifies mould group the second radio frequency of connection
Road, thus, the different EN- between 4G and 5G refarming frequency range can be realized in the case where not increasing radio-frequency channel quantity
DC combination configuration, also, under every kind of EN-DC combination, radio-frequency transmissions access, which is separated from each other, to come, so that two kinds of frequency ranges can
It works at the same time, and does not conflict mutually.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise ", " axial direction ", " radial direction ", " circumferential direction " be orientation based on the figure or
Positional relationship is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must
There must be specific orientation, be constructed and operated in a specific orientation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include at least one this feature.In the description of the present invention, the meaning of " plurality " is at least two, such as two, three
It is a etc., unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；It can be mechanical connect
It connects, is also possible to be electrically connected；It can be directly connected, can also can be in two elements indirectly connected through an intermediary
The interaction relationship of the connection in portion or two elements, unless otherwise restricted clearly.For those of ordinary skill in the art
For, the specific meanings of the above terms in the present invention can be understood according to specific conditions.
In the present invention unless specifically defined or limited otherwise, fisrt feature in the second feature " on " or " down " can be with
It is that the first and second features directly contact or the first and second features pass through intermediary mediate contact.Moreover, fisrt feature exists
Second feature " on ", " top " and " above " but fisrt feature be directly above or diagonally above the second feature, or be merely representative of
First feature horizontal height is higher than second feature.Fisrt feature can be under the second feature " below ", " below " and " below "
One feature is directly under or diagonally below the second feature, or is merely representative of first feature horizontal height less than second feature.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office
It can be combined in any suitable manner in one or more embodiment or examples.In addition, without conflicting with each other, the skill of this field
Art personnel can tie the feature of different embodiments or examples described in this specification and different embodiments or examples
It closes and combines.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, modifies, replacement and variant.
Claims (10)
1. a kind of radio frequency front-end device characterized by comprising
First radio frequency path；
Second radio frequency path；
First radio-frequency module, first radio-frequency module include the first 5G amplification mould group, medium-high frequency amplification mould group and first switch
Mould group, wherein the first 5G amplification mould group connects second radio frequency path, and the medium-high frequency amplification mould group passes through described the
One switching molding group connects first radio frequency path and second radio frequency path, and the first switch mould group is described for controlling
Medium-high frequency amplifies mould group and connects first radio frequency path or second radio frequency path；
Second radio-frequency module, second radio-frequency module include the 2nd 5G amplification mould group, low frequency amplification mould group and second switch mould
Group, wherein the 2nd 5G amplification mould group connects second radio frequency path, and the low frequency amplification mould group is opened by described second
Guan Mo group connects first radio frequency path and second radio frequency path, and the second switch mould group is for controlling the low frequency
Amplify mould group and connects first radio frequency path or second radio frequency path.
2. radio frequency front-end device according to claim 1, which is characterized in that further include:
First supply access, first supply access are connected with first radio-frequency module, to give first radio-frequency module
Power supply；
Second supply access, second supply access are connected with second radio-frequency module, to give second radio-frequency module
Power supply.
3. radio frequency front-end device according to claim 1, which is characterized in that the first 5G amplification mould group includes the 2nd 5G
Amplification module, the 2nd 5G amplification module connect second radio frequency path, and the 2nd 5G amplification mould group includes the first 5G
Amplification module and the 3rd 5G amplification module, the first 5G amplification module and the 3rd 5G amplification module are all connected with second radio frequency
Access, wherein the first 5G amplification module and the 2nd 5G amplification module support same 5G frequency range.
4. radio frequency front-end device according to claim 3, which is characterized in that the first 5G amplification module and described second
5G amplification module supports N78 frequency range or N77 frequency range or N79 frequency range, and the 3rd 5G amplification module supports N41 frequency range.
5. radio frequency front-end device according to claim 4, which is characterized in that under independence networking mode, the 2nd 5G
Amplification module is connected to second radio frequency path or the first 5G amplification module is connected to second radio frequency path to carry out N78
The 5G of frequency range or N77 frequency range or N79 frequency range communication, at the same the 3rd 5G amplification module be connected to second radio frequency path or
The medium-high frequency is controlled by the first switch mould group and amplifies mould group connection second radio frequency path, to carry out N41 frequency range
5G communication.
6. radio frequency front-end device according to claim 1, which is characterized in that
The medium-high frequency amplification mould group includes intermediate frequency amplifier and high-frequency amplifier, and the first switch mould group includes first switch
And second switch, wherein the first contact of the first switch is connected with the intermediate frequency amplifier, and the second of the first switch
Contact connection first radio frequency path, third contact connection second radio frequency path of the first switch, described first
Intermediate frequency amplifier described in switch control connects first radio frequency path or second radio frequency path, and the of the second switch
One contact is connected with the high-frequency amplifier, and the second contact of the second switch connects first radio frequency path, and described the
The third contacts of two switches connect second radio frequency paths, and the second switch controls the high-frequency amplifier and connects described the
One radio frequency path or second radio frequency path；
The low frequency amplification mould group includes low-frequency amplifier, and the second switch mould group includes third switch, wherein the third
First contact of switch is connected with the low-frequency amplifier, and it is logical that the second contact of the third switch connects first radio frequency
The third contact on road, the third switch connects second radio frequency path, low-frequency amplifier described in the third switch control
Connect first radio frequency path or second radio frequency path.
7. radio frequency front-end device according to claim 1 to 6, which is characterized in that in dependent networking model
Under, the low frequency is controlled by the second switch mould group amplify mould group and connect first radio frequency path, and passes through described the
One switching molding group controls the medium-high frequency amplification mould group and connects second radio frequency path, so that low frequency amplification mould group and institute
It states medium-high frequency amplification mould group while working, alternatively, controlling the medium-high frequency by the first switch mould group amplifies mould group
First radio frequency path is connected, and the low frequency amplification mould group connection described second is controlled by the second switch mould group and is penetrated
Frequency access, so that low frequency amplification mould group and medium-high frequency amplification mould group work simultaneously, wherein the low frequency amplification
Mould group or medium-high frequency amplification mould group are for carrying out 5G communication.
8. radio frequency front-end device according to claim 1 to 6, which is characterized in that in dependent networking model
Under, the medium-high frequency is controlled by the first switch mould group and amplifies mould group connection first radio frequency path, and described second
5G amplifies mould group and connects second radio frequency path, so that medium-high frequency amplification mould group and the 2nd 5G amplification mould group are simultaneously
It works, wherein the 2nd 5G amplification mould group is for carrying out 5G communication.
9. radio frequency front-end device according to claim 1 to 6, which is characterized in that in dependent networking model
Under, the low frequency is controlled by the second switch mould group and amplifies mould group connection first radio frequency path, and the first 5G
Amplify mould group and connect second radio frequency path, so that low frequency amplification mould group and the first 5G amplification mould group carry out simultaneously
Work, wherein the first 5G amplification mould group is for carrying out 5G communication.
10. a kind of electronic equipment, which is characterized in that including radio frequency front-end device according to claim 1 to 9.
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| CN201910656441.XA CN110365359B (en) | 2019-07-19 | 2019-07-19 | Radio frequency front-end device and electronic equipment |
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| CN201910656441.XA CN110365359B (en) | 2019-07-19 | 2019-07-19 | Radio frequency front-end device and electronic equipment |
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| CN113676214A (en) * | 2021-08-12 | 2021-11-19 | Oppo广东移动通信有限公司 | Amplifier module, radio frequency system and communication equipment |
| WO2023016198A1 (en) * | 2021-08-12 | 2023-02-16 | Oppo广东移动通信有限公司 | Radio frequency system and communication device |
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| CN110365359B (en) | 2021-06-04 |
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