CN110362915B - Double-frequency negative group delay circuit based on coupling line and annular microstrip line - Google Patents
Double-frequency negative group delay circuit based on coupling line and annular microstrip line Download PDFInfo
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- CN110362915B CN110362915B CN201910613676.0A CN201910613676A CN110362915B CN 110362915 B CN110362915 B CN 110362915B CN 201910613676 A CN201910613676 A CN 201910613676A CN 110362915 B CN110362915 B CN 110362915B
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Abstract
The invention discloses a double-frequency negative group delay circuit based on a coupling line and an annular microstrip line, which is of a symmetrical structure and comprises a microstrip line IL i I = {1, 2, 3}, a coupled microstrip line composed of three microstrip lines, wherein the microstrip line IL 2 And IL 3 The structure is the same; the microstrip line IL 1 Connected with the connection port 3 and the connection port 4 of the coupling microstrip line to form a loop, and connected with the microstrip line IL 1 The length d of the microstrip connecting line of the ring microstrip line and the coupling microstrip line 1 Is 13.45mm; the microstrip line IL 2 Connected to a connection port 5 of a coupled microstrip line IL 3 Is connected with the connecting port 6 of the coupling microstrip line; and the connection port 1 and the connection port 2 of the coupling microstrip line are an input port and an output port respectively.
Description
Technical Field
The invention belongs to the technical field of microwave engineering, and particularly relates to a double-frequency negative group delay circuit based on a coupling line and an annular microstrip line.
Background
Early in the 20 th century, after american scientists a.sommerfeld and l.brillouin proposed the possibility of group delay being negative, "negative group delay" was controversial for a considerable period of time until Chu and Wong of bell laboratories first had crossed GaP in laser pulses: negative group velocities were observed in the experiments with N samples. Thereafter, in other optical and quantum experiments, it was confirmed that the group velocity is negative or greater than the speed of light many times. After the twentieth century, with the development of novel materials such as left-handed materials and the like and the higher and higher requirements on the performance of communication systems, more researchers begin to research group delay. Especially in recent years, the negative group delay circuit has attracted the attention of researchers in various countries around the world due to its special performance and wide application in the fields of feed forward amplifiers, antenna arrays, etc., and has become another research focus.
In recent years, the negative group delay circuit starts from the simplest RLC resonant unit, but the loss of the basic negative group delay circuit based on the RLC is relatively large, so that the loss of the circuit can be reduced by combining the RLC resonant network and the amplifier. In addition, in addition to the active negative group delay circuit using the RLC and amplifier, recently, a passive negative group delay circuit formed using a microstrip line-related structure has been proposed as a passive structure, which is characterized in that its loss is low and it can be developed to a high frequency. Some of these efforts have been mostly explored by foreign researchers, while in the domestic negative group delay circuits have been rarely explored.
Disclosure of Invention
The invention aims to solve the technical problem that the double-frequency negative group delay circuit based on the coupling line and the annular microstrip line is provided for reducing the loss and the reflection of the negative group delay circuit and improving the group delay based on the microwave engineering theory aiming at the defects of the prior art.
In order to achieve the technical purpose, the technical scheme adopted by the invention is as follows:
a dual-frequency negative group delay circuit based on coupling line and annular microstrip line comprises microstrip line IL i I = {1, 2, 3}, a coupling microstrip line composed of three microstrip lines, wherein the microstrip line IL 2 And II 3 The structure is the same; the microstrip line IL 1 Comprises a semi-ring microstrip line, a left connecting line and a right connecting line, wherein the left connecting line and the right connecting line are symmetrically distributed and have the same size, and the length d of the connecting line 1 The left connecting line is 13.45mm and is connected with a third connecting port of the coupling microstrip line, and the right connecting line is connected with a fourth connecting port of the coupling microstrip line; the microstrip line IL 2 Connected with a connection port five of a coupling microstrip line, the microstrip line IL 3 The six-port connection is connected with the connection port of the coupling microstrip line; the first connecting port and the second connecting port of the coupling microstrip line are an input port and an output port respectively.
In order to optimize the technical scheme, the specific measures adopted further comprise:
the microstrip line IL 1 Diameter D and width w of the annular microstrip line 1 13.85mm and 1.5mm respectively.
The microstrip line IL 2 And IL 3 Length d of 3 And a width w 3 40mm and 1.5mm respectively.
Three microstrip lines of the coupled microstrip lines are arranged in parallel, and the length d of the coupled microstrip lines 2 And width w 2 13.85mm and 1.5mm respectively, and the distance S between the coupled microstrip lines from top to bottom 1 And S 2 Are all 1.55mm.
The connecting lines at the two ends of the first coupling microstrip line connecting port and the second coupling microstrip line connecting port are symmetrically distributed and have the same size, and the length d of the connecting lines 4 And width w 2 8.45mm and 1.5mm respectively.
The circuit works in an S frequency band, and when the central frequency is 2.55GHz and 2.61GHz, the group delay of the circuit is-2.8 ns and-0.6 ns respectively; loss S of circuit 21 Respectively-3.8 dB and-1.4 dB; reflection S of the circuit 11 Respectively-10 dB and-20 dB.
The invention has the beneficial effects that:
in order to realize the miniaturization of the circuit, reduce the loss and reflection of the circuit, improve the group delay bandwidth and time delay, a double-frequency negative group delay circuit based on a coupling line and an annular microstrip line and a design method thereof are designed, the designed circuit is optimally designed, and finally, the following steps are obtained: the circuit works in an S frequency band and can realize double-frequency negative group time delay; when the central frequency is 2.55GHz and 2.61GHz, the group delay of the circuit is-2.8 ns and-0.6 ns respectively; loss S of circuit 21 Respectively-3.8 dB and-1.4 dB; reflection S of the circuit 11 Respectively-10 dB and-20 dB. The circuit can be used in a microwave circuit to solve the distortion problem caused by signal time delay.
Drawings
FIG. 1 is a circuit schematic of the present invention;
FIG. 2 is a schematic diagram of the circuit structure of the present invention;
FIG. 3 is a diagram of the ADS model of the circuit of the present invention;
FIG. 4 is a diagram illustrating a simulation result of group delay of the circuit of the present invention;
FIG. 5 shows S of the circuit of the present invention 21 A simulation result schematic diagram;
FIG. 6 shows S of the circuit of the present invention 11 And (5) a simulation result schematic diagram.
Detailed Description
Embodiments of the present invention are described in further detail below with reference to the accompanying drawings.
As shown in fig. 1, 2 and 3, the present invention is a dual-frequency negative group delay circuit based on a coupled line and a ring microstrip line, which includes a microstrip line IL i I = {1, 2, 3}, a coupled microstrip line composed of three microstrip lines, wherein the microstrip line IL 2 And IL 3 The structures are the same; the microstrip line IL 1 Comprises a semi-ring microstrip line, a left connecting line and a right connecting line, wherein the left connecting line and the right connecting line are symmetrically distributed and have the same size, and the length d of the connecting line 1 The thickness of the left connecting line is 13.45mm, the left connecting line is connected with a third connecting port of the coupling microstrip line, and the right connecting line is connected with a fourth connecting port of the coupling microstrip line; the microstrip line IL 2 Connected with a connection port five of a coupled microstrip line, the microstrip line IL 3 The six-port connection is connected with the connection port of the coupling microstrip line; the first connecting port and the second connecting port of the coupling microstrip line are an input port and an output port respectively.
The optimization results of ADS for this circuit size are shown in the following table:
TABLE 1 basic circuit parameter size
Microstrip line IL 1 Diameter D and width w of the semi-annular microstrip line 1 13.85mm and 1.5mm, respectively, a microstrip line IL 2 And IL 3 Length d of 3 And width w 3 40mm and 1.5mm, respectively, microstrip line IL 1 Length d of the left and right connecting lines 1 13.45mm, microstrip line IL 2 And IL 3 Length d of 3 And width w 3 40mm and 1.5mm respectively, length d of the coupling microstrip line 2 And width w 2 13.85mm and 1.5mm respectively, and the distance S between the coupled microstrip lines from top to bottom 1 And S 2 Are all 1.55mm.
In this example, the circuit ADS model used an FR4 board with a thickness of 1.6mm, a dielectric constant of 4.4, a tangent loss angle of 0.02, and a copper thickness of 0.035mm.
Simulation design optimization is carried out on the proposed circuit at 2.4-2.75 GHz by using simulation software ADS, and the basic parameter size of the circuit shown in the table 1 can be obtained.
As can be seen from fig. 4, 5 and 6, the circuit operates in the S-band, and can implement the dual-frequency negative group delay; when the central frequency is 2.55GHz and 2.61GHz, the group delay of the circuit is-2.8 ns and-0.6 ns respectively; loss S of circuit 21 Respectively-3.8 dB and-1.4 dB; reflection S of the circuit 11 Respectively-10 dB and-20 dB.
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above-mentioned embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may be made by those skilled in the art without departing from the principle of the invention.
Claims (6)
1. A double-frequency negative group delay circuit based on a coupling line and an annular microstrip line is characterized in that: comprising a microstrip line IL i I =1 or 2 or 3, a coupled microstrip line of three microstrip lines, wherein the microstrip line IL 2 And IL 3 The structure is the same; the microstrip line IL 1 Comprises a semi-ring microstrip line, a left connecting line and a right connecting line, wherein the left connecting line and the right connecting line are symmetrically distributed and have the same size, and the length d of the connecting line 1 The left connecting line is 13.45mm and is connected with a third connecting port of the coupling microstrip line, and the right connecting line is connected with a fourth connecting port of the coupling microstrip line; the microstrip line IL 2 Connected with a connection port five of a coupling microstrip line, the microstrip line IL 3 The six-port connection is connected with the connection port of the coupling microstrip line; the first connecting port and the second connecting port of the coupling microstrip line are an input port and an output port respectively.
2. The dual-frequency negative group delay circuit based on the coupled line and the annular microstrip line according to claim 1, wherein: the microstrip line IL 1 Diameter D and width w of the semi-annular microstrip line 1 13.85mm and 1.5mm respectively.
3. The dual-frequency negative group delay circuit based on the coupled line and the annular microstrip line according to claim 1, wherein: the microstrip line IL 2 And IL 3 Length d of 3 And width w 3 40mm and 1.5mm respectively.
4. The dual-frequency negative group delay circuit based on the coupled line and the annular microstrip line according to claim 1, wherein: three microstrip lines of the coupled microstrip lines are arranged in parallel, and the length d of the coupled microstrip lines 2 And width w 2 13.85mm and 1.5mm respectively, and the distance S between the coupled microstrip lines from top to bottom 1 And S 2 Are all 1.55mm.
5. The dual-frequency negative group delay circuit based on the coupled line and the annular microstrip line according to claim 4, wherein: the first coupling microstrip line connection port and the second coupling microstrip line connection port are symmetrically distributed and have the same size, and the length d of the connection lines 4 And width w 2 8.45mm and 1.5mm respectively.
6. The dual-frequency negative group delay circuit based on the coupled line and the annular microstrip line according to claim 1, wherein: the circuit works in an S frequency band, and when the central frequency is 2.55GHz and 2.61GHz, the group delay of the circuit is respectively 2.8ns and-0.6 ns; loss S of circuit 21 Respectively-3.8 dB and-1.4 dB; reflection S of the circuit 11 Respectively-10 dB and-20 dB.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910613676.0A CN110362915B (en) | 2019-07-08 | 2019-07-08 | Double-frequency negative group delay circuit based on coupling line and annular microstrip line |
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| CN201910613676.0A CN110362915B (en) | 2019-07-08 | 2019-07-08 | Double-frequency negative group delay circuit based on coupling line and annular microstrip line |
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| CN110362915A CN110362915A (en) | 2019-10-22 |
| CN110362915B true CN110362915B (en) | 2023-04-07 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109120238A (en) * | 2018-08-13 | 2019-01-01 | 南京信息工程大学 | A kind of negative group delay circuitry of band logical based on RLC and its design method |
| CN109918864A (en) * | 2019-05-05 | 2019-06-21 | 南京信息工程大学 | Negative group delay circuitry and design method based on fan-shaped stub and coupled microstrip line |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2999337A1 (en) * | 2012-12-12 | 2014-06-13 | Thomson Licensing | TRANSITION CIRCUIT FROM MICRO-RIBBON LINE TO DUAL-BAND SLOT LINE |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109120238A (en) * | 2018-08-13 | 2019-01-01 | 南京信息工程大学 | A kind of negative group delay circuitry of band logical based on RLC and its design method |
| CN109918864A (en) * | 2019-05-05 | 2019-06-21 | 南京信息工程大学 | Negative group delay circuitry and design method based on fan-shaped stub and coupled microstrip line |
Non-Patent Citations (2)
| Title |
|---|
| Theory of Coupled Line Coupler-Based Negative Group Delay Microwave Circuit;Blaise Ravelo 等;《IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES》;20161231;第1页-第8页 * |
| 微带线实现环形交叉耦合带通滤波器的设计;王蒙 等;《泰山学院学报》;20120531;第34卷(第3期);第90页-第93页 * |
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