CN110349975A - 一种显示面板及其制备方法 - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 33
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 17
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- 229920002120 photoresistant polymer Polymers 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 239000012528 membrane Substances 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
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- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract 1
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- 230000000903 blocking effect Effects 0.000 description 5
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- 229910003978 SiClx Inorganic materials 0.000 description 1
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Abstract
本发明公开了一种显示面板及其制备方法,显示面板包括显示区和围绕所述显示区的非显示区,以及阵列基板,设置在显示区和非显示区中;所述阵列基板包括凹槽,设于所述阵列基板中,且位于所述非显示区并围绕所述显示区形成一圈;封装填充层,填充于所述凹槽中,所述封装填充层所用材料为氮化硅。本发明的有益效果在于本发明的显示面板及其制备方法通过在阵列基板对应密封结构处开设凹槽并填充氮化硅从而有效隔绝显示面板边缘处的水氧入侵,同时凹槽设于显示面板的非显示区,氮化硅中的游离态氢离子无法扩散到源漏电极上,不会导致显示面板失效,有效防止显示面板显示不良。
Description
技术领域
本发明涉及显示领域,特别涉及一种显示面板及其制备方法。
背景技术
氧化物TFT(Thin Film Transistor薄膜晶体管)面板因其在低功耗,窄边框方面的优势,市场占有率越来越高。但氧化物TFT对空气中的水汽,氢离子非常敏感,水汽和游离态的氢离子会剥夺氧化物半导体中的氧,使得半导体导体化,TFT失去开关作用。从而造成显示不良。
目前采用的方案主要有两种,一种是用SiNx作为TFT的绝缘层,SiNx绝缘特性较好,膜质致密,有非常优异的阻挡水汽和游离态的Na,K等离子的能力。但SiNx中游离态的H+很多,很容易扩散到TFT器件上,导致TFT器件失效,导致良率下降,另外,采用SiNx作为钝化层,进行过孔刻蚀的时候,SiNx与SiOx同时刻蚀,因为SiNx和SiOx的刻蚀特性差异较大,非常容易产生UnderCut,刻蚀副产物等问题,工艺窗口很小,为此常常需要增加一道绝缘层工艺,严重影响产能和良率。第二种方案是用SiNO或SiOx来作为TFT器件的绝缘层,但SiNO和SiOx膜质疏松,且呈亲水特性,对水汽和游离态的Na,K等离子的阻挡能力很弱。特别对于面板的周边位置,水汽非常容易进入,从而形成面板周边显示不良。
发明内容
为了解决上述问题,本发明提供了一种显示面板及其制备方法,用以解决现有技术中由于氮化硅中游离态的氢离子很多,容易扩散到电元件上,造成器件失效,而氧化硅有无法有效隔绝水氧的问题。
解决上述问题的技术方案是:本发明提供了一种显示面板,包括显示区和围绕所述显示区的非显示区,以及阵列基板,设置在显示区和非显示区中;所述阵列基板包括凹槽,设于所述阵列基板中,且位于所述非显示区并围绕所述显示区形成一圈;封装填充层,填充于所述凹槽中,所述封装填充层所用材料为氮化硅。
进一步的,所述阵列基板还包括基板;栅极层,设于所述基板上;第一绝缘层,设于所述基板上且覆盖所述栅极层;第二绝缘层,设于所述第一绝缘层上;第一金属层,设于所述第二绝缘层上;源漏电极,设于所述第二绝缘层上且与所述第一金属层电性连接;第一封装层,设于所述第二绝缘层上且覆盖所述源漏电极和所述第一金属层;第二封装层,设于所述第一封装层上;发光层,设于所述第二封装层且穿过所述第一封装层、第二封装层电性连接于所述源漏电极上;其中,所述凹槽至所述第二封装层贯穿至所述第一绝缘层。
进一步的,所述阵列基板还包括第二金属层,设于所述基板上且与所述栅极层高度相同;其中,所述第二金属层对应所述凹槽。
进一步的,所述第一绝缘层的材质为氮化硅;所述第二绝缘层的材质为氧化硅。
进一步的,所述第一封装层的材料为氧化硅;所述第二封装层的材料为氮氧化硅。
进一步的,还包括彩膜基板,与所述阵列基板相对设置;密封结构,密封的设于所述彩膜基板和所述阵列基板之间,且对应于所述凹槽。
本发明还提供了一种显示面板的制备方法,包括显示区和围绕所述显示区的非显示区,包括提供阵列基板,所述阵列基板包括显示区和非显示区;在所述阵列基板的所述非显示区上开设凹槽,所述凹槽围绕所述显示区形成一圈;在所述阵列基板的所述凹槽开口处一侧涂布光刻胶形成光刻胶层;在所述光刻胶层上涂布一层氮化硅,所述氮化硅填充所述凹槽;显影去除所述光刻胶层及所述光刻胶层上的氮化硅;残留于所述凹槽内的所述氮化硅形成封装填充层。
进一步的,所述阵列基板制备步骤包括
S1)提供一基板;
S2)在所述基板上形成栅极层,所述栅极层设于所述显示区中,在所述基板的非显示区中形成第二金属层,所述第二金属层与所述栅极层同高;
S3)在所述栅极层上沉积第一绝缘层,其中,所述第一绝缘层覆盖所述栅极层和所述第二金属层;
S4)在所述第一绝缘层上形成第一金属层,所述第一金属层对应所述栅极层;
S5)在所述第二绝缘层上形成源漏电极,所述源漏电极分散于所述第一金属层两侧且与所述第一金属层电性连接;
S6)在所述第二绝缘层上形成第一封装层,所述第一封装层覆盖所述源漏电极和所述第一金属层;
S7)在所述第一封装层形成第二封装层。
进一步的,在涂布所述氮化硅的过程中,温度小于200℃。
进一步的,还包括提供一彩膜基板;在对应所述凹槽处形成一密封结构,所述密封结构连接所述彩膜基板和所述阵列基板。
本发明的优点是:本发明的显示面板及其制备方法通过在阵列基板对应密封结构处开设凹槽并填充氮化硅从而有效隔绝显示面板边缘处的水氧入侵,同时凹槽设于显示面板的非显示区,氮化硅中的游离态氢离子无法扩散到源漏电极上,不会导致显示面板失效,有效防止显示面板显示不良。
附图说明
下面结合附图和实施例对本发明作进一步解释。
图1是实施例中显示面板示意图。
图2是实施例中显示面板局部示意图。
图3是实施例中显示面板制备方法步骤图。
图4是实施例中阵列基板示意图。
10显示面板; 100阵列基板;
200彩膜基板; 300密封结构;
11显示区; 12非显示区;
110基板; 120栅极层;
130第一绝缘层; 140第二绝缘层;
150第一金属层; 160源漏电极;
170第一封装层; 180第二封装层;
190发光层; 101凹槽;
102封装填充层; 121第二金属层;
181光刻胶层; 182氮化硅层;
具体实施方式
以下实施例的说明是参考附加的图式,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。
实施例
如图1所示,本发明的显示面板10包括相对设置的阵列基板100和彩膜基板200。
所述显示面板10上设有显示区11和围绕所述显示区11的非显示区12。其中,所述阵列基板100包括基板110、栅极层120、第一绝缘层130、第二绝缘层140、第一金属层150、源漏电极160、第一封装层170、第二封装层180和发光层190。
所述基板110为硬质玻璃基板。所述栅极层120设于所述基板110上。
所述第一绝缘层130设于所述基板110上并覆盖所述栅极层120,用于绝缘所述栅极层120,所述第一绝缘层130所用材质为氮化硅,氮化硅的绝缘性能较好,膜质致密,有非常优异的阻挡水汽和游离态的Na,K等离子的能力。
然而,由于氮化硅中游离态的H+很多,很容易扩散到所述显示面板10上,使所述显示面板10失效,导致良率下降,故本实施例中,在所述第一绝缘层130上设置所述第二绝缘层140,所述第二绝缘层140为氧化硅,避免水汽入侵。
所述第一金属层150设于所述第二绝缘层140上,其中,所述第一金属层150位于所述显示面板10的显示区11中。
所述源漏电极160设于所述第一金属层150两侧且与所述第一金属层150电性连接。
所述第一封装层170设于所述第二绝缘层140上,且覆盖所述第一金属层150和所述源漏电极160,其中,所述第一封装层170的材料为氧化硅,用以防止水汽入侵,使所述显示面板10显示失效。
所述第二封装层180设于所述第一封装层170上,所述第二封装层180的所用材料为氮氧化硅,进一步隔绝水氧入侵,保护所述第一金属层150和所述源漏电极160。
所述发光层190设于所述第二封装层180上,其贯穿所述第一封装层170和第二封装层180,电性连接于所述源漏电极160上。
由于氧化硅和氮氧化硅的膜质疏松,且呈亲水性,所以对水汽和游离态的Na,K等离子的阻挡能力很弱,特别是所述显示面板10的边缘处,水汽非常容易进入,从而使所述显示面板10周边显示不良。
如图2所示,为了避免这一现象,本实施例中,本发明在所述显示面板10的非显示区12中设有一凹槽101,具体的,所述凹槽101设于所述阵列基板100上,自所述第二封装层180贯穿至所述第一绝缘层130,所述凹槽101位于所述非显示区12中并围绕所述显示区11形成一圈。
所述凹槽101为上宽下窄的类倒梯形,用于填充封装填充层102,所述封装填充层102一端与所述第一绝缘层130相连,一端与所述第二封装层180远离所述第一封装层170的一侧平齐,所述封装填充层102的材料与所述第一绝缘层130的材料相同,均为氮化硅,氮化硅的绝缘性能较好,膜质致密,有非常优异的阻挡水汽和游离态的Na,K等离子的能力,由于所述封装填充层102只设于所述凹槽101内,既可以避免所述显示面板10周围因为采用氧化硅和氮氧化硅等氧化物的所述第一封装层170和所述第二封装层180而导致的水汽入侵,又可以避免采用氮化硅导致的游离态氢离子对所述第一金属层150和所述源漏电极160的损害。
为了减少所述封装填充层102在所述凹槽101内的深度,提高均一性,本实施例中,在所述基板110上设置一第二金属层121,所述第二金属层121与所述栅极层120的材料及高度一致,不同点在于,所述第二金属层121设于所述阵列基板100的非显示区中,对应所述凹槽101的位置。
本实施例中,所述显示面板10还包括一密封结构300,所述密封结构300连接所述阵列基板100和所述彩膜基板200,具体的,所述密封结构300位于所述显示面板10的非显示区12中,且在所述阵列基板100上对应所述凹槽101所在位置,用以对所述显示面板进行密封。
为了更好的解释本发明,本实施提供了一种所述显示面板10的制备方法,其中阵列基板的制备步骤包括S1)~S7)。
S1)提供一基板;
S2)在所述基板110上形成栅极层120,所述栅极层120设于所述显示区11中,在所述基板110的非显示区12中形成第二金属层121,所述第二金属层121与所述栅极层120同高;
S3)在所述栅极层120上沉积第一绝缘层130,其中,所述第一绝缘层130覆盖所述栅极层120和所述第二金属层121;
S4)在所述第一绝缘层130上形成第二绝缘层140;
S5)在所述第二绝缘层140形成第一金属层150,所述第一金属层150对应所述栅极层120;
S6)在所述第二绝缘层140上形成源漏电极160,所述源漏电极160分散于所述第一金属层150两侧且与所述第一金属层150电性连接;
S7)在所述第二绝缘层140上形成第一封装层170,所述第一封装层170覆盖所述源漏电极160和所述第一金属层150;
S8)在所述第一封装层170形成第二封装层180;
S9)在所述阵列基板的所述非显示区即所述第二封装层180上开设凹槽101,所述凹槽101自所述第二封装层180贯穿至所述第一绝缘层130。
S10)如图3所示,在所述阵列基板100的所述第二封装层180上涂布光刻胶;
对所述凹槽101上方的所述光刻胶进行曝光显影,其余部分的光刻胶保留形成光刻胶层181;
S11)在所述光刻胶层181上涂布氮化硅形成氮化硅层182,由于所述凹槽101上方的所述光刻胶被去除,所以所述氮化硅经由所述凹槽101上方开口进入所述凹槽101内部并填充满所述凹槽101,为了避免所述光刻胶在涂布所述氮化硅的过程中被挥发,需要保持温度在200℃以下;
如图4所示,显影去除所述光刻胶层181及所述光刻胶层181上的氮化硅层182,由于所述光刻胶层181上的所述氮化硅会随着下方的所述光刻胶181的显影溶解而自动脱落,避免了通过刻蚀来去除所述氮化硅层182从而导致所述第二封装层180损伤。残留于所述凹槽101内的所述氮化硅形成封装填充层102。
以上仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。
Claims (10)
1.一种显示面板,其特征在于,包括显示区和围绕所述显示区的非显示区,以及
阵列基板,设置在显示区和非显示区中;所述阵列基板包括
凹槽,设于所述阵列基板中,且位于所述非显示区并围绕所述显示区形成一圈;
封装填充层,填充于所述凹槽中,所述封装填充层所用材料为氮化硅。
2.根据权利要求1所述的显示面板,其特征在于,
所述阵列基板还包括
基板;
栅极层,设于所述基板上;
第一绝缘层,设于所述基板上且覆盖所述栅极层;
第二绝缘层,设于所述第一绝缘层上;
第一金属层,设于所述第二绝缘层上;
源漏电极,设于所述第二绝缘层上且与所述第一金属层电性连接;
第一封装层,设于所述第二绝缘层上且覆盖所述源漏电极和所述第一金属层;
第二封装层,设于所述第一封装层上;
发光层,设于所述第二封装层且穿过所述第一封装层、第二封装层电性连接于所述源漏电极上;其中,所述凹槽至所述第二封装层贯穿至所述第一绝缘层。
3.根据权利要求2所述的显示面板,其特征在于,还包括
第二金属层,设于所述基板上且与所述栅极层高度相同;其中,所述第二金属层对应所述凹槽。
4.根据权利要求2所述的显示面板,其特征在于,
所述第一绝缘层的材质为氮化硅;
所述第二绝缘层的材质为氧化硅。
5.根据权利要求2所述的显示面板,其特征在于,
所述第一封装层的材料为氧化硅;
所述第二封装层的材料为氮氧化硅。
6.根据权利要求1所述的显示面板,其特征在于,还包括
彩膜基板,与所述阵列基板相对设置;
密封结构,密封的设于所述彩膜基板和所述阵列基板之间,且对应于所述凹槽。
7.一种显示面板的制备方法,包括显示区和围绕所述显示区的非显示区,其特征在于,包括
提供阵列基板,所述阵列基板包括显示区和非显示区;
在所述阵列基板的所述非显示区上开设凹槽,所述凹槽围绕所述显示区形成一圈;
在所述阵列基板的所述凹槽开口处一侧涂布光刻胶形成光刻胶层;
在所述光刻胶层上涂布一层氮化硅,所述氮化硅填充所述凹槽;
显影去除所述光刻胶层及所述光刻胶层上的氮化硅;残留于所述凹槽内的所述氮化硅形成封装填充层。
8.根据权利要求7所述的显示面板的制备方法,其特征在于,所述阵列基板制备步骤包括
S1)提供一基板;
S2)在所述基板上形成栅极层,所述栅极层设于所述显示区中,在所述基板的非显示区中形成第二金属层,所述第二金属层与所述栅极层同高;
S3)在所述栅极层上沉积第一绝缘层,其中,所述第一绝缘层覆盖所述栅极层和所述第二金属层;
S4)在所述第一绝缘层上形成第一金属层,所述第一金属层对应所述栅极层;
S5)在所述第二绝缘层上形成源漏电极,所述源漏电极分散于所述第一金属层两侧且与所述第一金属层电性连接;
S6)在所述第二绝缘层上形成第一封装层,所述第一封装层覆盖所述源漏电极和所述第一金属层;
S7)在所述第一封装层形成第二封装层。
9.根据权利要求7所述的显示面板的制备方法,其特征在于,
在涂布所述氮化硅的过程中,温度小于200℃。
10.根据权利要求7所述的显示面板的制备方法,其特征在于,还包括提供一彩膜基板;
在对应所述凹槽处形成一密封结构,所述密封结构密封地连接所述彩膜基板和所述阵列基板。
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