CN110344058A - Improve the method and plain conductor etching device of etching liquid service life - Google Patents
Improve the method and plain conductor etching device of etching liquid service life Download PDFInfo
- Publication number
- CN110344058A CN110344058A CN201910610959.XA CN201910610959A CN110344058A CN 110344058 A CN110344058 A CN 110344058A CN 201910610959 A CN201910610959 A CN 201910610959A CN 110344058 A CN110344058 A CN 110344058A
- Authority
- CN
- China
- Prior art keywords
- etching liquid
- etching
- groove
- concentration
- permeable membrane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/46—Regeneration of etching compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
Abstract
A kind of method and plain conductor etching device improving etching liquid service life in plain conductor processing procedure, it include: the etching liquid groove that an etching spray groove is provided and is connected to the etching spray groove, the etching liquid groove is equipped with etching liquid, the etching liquid groove is also connected to a filter device, and the filter device includes a permeable membrane；Metal ion filtering is carried out to the etching liquid in the etching liquid groove using the filter device, makes the concentration of metal ions in the etching liquid in predetermined use scope；The filtered part etching liquid is back to the etching liquid groove.The present invention can adjust the concentration of metal ions in etching liquid, further increase the service life of etching liquid.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of methods and plain conductor for improving etching liquid service life
Etching device.
Background technique
TFT-LCD (thin film transistor-liquid crystal display) is increasingly toward oversize, high-frequency driving and high score at present
How resolution etc. development, it is increasingly important with parasitic capacitance be effectively reduced panel conductor resistance.TFT-LCD is high in production
The conducting wire process technique of quality has become the key for dominating thin-film transistor component and panel characteristics.However, in current gold
Belong in conducting wire etching processing procedure, the etching liquid that generallys use is dioxygen water system, with the increase of the substrate the piece number of etching, in etching liquid
Concentration of metal ions also can constantly rise, and hydrogen peroxide under the action of metal ion can accelerated decomposition release oxygen.
Further, with the continuous progress in plain conductor etching process, the concentration of metal ions in etching liquid also constantly increases, double
The decomposition rate of oxygen water is also getting faster, and is declined so as to cause the stability of etching liquid, can only be discharged and re-replace new quarter
Liquid is lost, considerably increases processing procedure cost in this way.
In conclusion the existing method and plain conductor etching device for improving etching liquid service life, in etching metal
When film layer, the accumulation of the metal ion of dissolution can accelerate the decomposition of etching liquid, and then influence etch effect, can only discharge and again
The etching liquid more renewed finally considerably increases processing procedure cost.
Summary of the invention
The present invention provides a kind of method and plain conductor etching device for improving etching liquid service life, can adjust etching
Concentration of metal ions in liquid is carved with solving the method in etching liquid service life and plain conductor in existing raising plain conductor processing procedure
Device is lost, when etching metallic diaphragm, the accumulation of the metal ion of dissolution can accelerate the decomposition of etching liquid, and then influence etching effect
Fruit, the technical issues of can only discharging and re-replace new etching liquid, finally considerably increase processing procedure cost.
To solve the above problems, technical solution provided by the invention is as follows:
The present invention provides a kind of method and plain conductor etching device for improving etching liquid service life, comprising:
S10, the etching liquid groove for providing an etching spray groove and being connected to the etching spray groove, the etching liquid groove hold
It is equipped with etching liquid, the etching liquid groove is also connected to a filter device, and the filter device includes a permeable membrane；
S20 carries out metal ion filtering to the etching liquid in the etching liquid groove using the filter device, makes institute
The concentration of metal ions in etching liquid is stated in predetermined use scope；
The filtered part etching liquid is back to the etching liquid groove by S30.
According to one preferred embodiment of the present invention, the material of the permeable membrane is cellulose acetate, aromatic polyamides and height
Any one in molecular compound film.
According to one preferred embodiment of the present invention, the pore size filter range of the permeable membrane is between 0.01 nanometer and 1000 nanometers
Between.
According to one preferred embodiment of the present invention, the step S20 further include:
S201, the metal ion that the etching liquid in the etching liquid groove is measured using the first concentration detection apparatus are dense
Degree, obtains the first test concentration of metal ions；
S202, when the first test concentration of metal ions is less than 500ppm, by the permeable membrane toward the etching
Release metal ions in liquid bath, when the first test concentration of metal ions is greater than 2000ppm, the permeable membrane starts from institute
State and absorb metal ion in etching liquid groove, finally make the concentration of metal ions of the etching liquid in the etching liquid groove between
Between 500ppm to 2000ppm.
According to one preferred embodiment of the present invention, the etching liquid is dioxygen water system etching liquid.
The present invention also provides a kind of plain conductor etching devices, including etch spray groove, etching liquid groove and filter device,
One end of the etching liquid groove is connected to the etching spray groove, the opposite other end of the etching liquid groove and the filter device
Connection；Wherein, the filter device includes a permeable membrane, and the metal ion that the permeable membrane is used to adjust in the etching liquid is dense
Degree.
According to one preferred embodiment of the present invention, when the concentration of metal ions in the etching liquid is less than 500ppm, pass through
Permeable membrane release metal ions in the etching liquid groove, so that concentration of metal ions at this time is greater than 500ppm；Work as institute
When stating the concentration of metal ions in etching liquid greater than 2000ppm, the permeable membrane starts to absorb metal out of described etching liquid groove
Ion, so that concentration of metal ions at this time is less than 2000ppm.
According to one preferred embodiment of the present invention, the material of the permeable membrane is cellulose acetate, aromatic polyamides and height
Any one in molecular compound film.
According to one preferred embodiment of the present invention, the pore size filter range of the permeable membrane is between 0.01 nanometer and 1000 nanometers
Between.
According to one preferred embodiment of the present invention, the metal ion include copper ion, silver ion, molybdenum ion, titanium ion with
And at least one of aluminium ion.
The invention has the benefit that the method provided by the present invention for improving etching liquid service life and plain conductor are carved
Device is lost, by increasing by a permeable membrane in the cyclic process of etching liquid, so that the concentration of metal ions in etching liquid is protected always
The service life for improving etching liquid in reasonable range is held, further reduced production cost.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is the method flow diagram that the present invention improves etching liquid service life.
Fig. 2 is the structural schematic diagram of plain conductor etching device of the present invention.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the present invention
Example.The direction term that the present invention is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.The similar unit of structure is with being given the same reference numerals in the figure.
The present invention is for the existing method and plain conductor etching device for improving etching liquid service life, in etching metal
When film layer, the accumulation of the metal ion of dissolution can accelerate the decomposition of etching liquid, and then influence etch effect, can only discharge and again
The etching liquid more renewed, the technical issues of finally considerably increasing processing procedure cost, the present embodiment is able to solve the defect.
As shown in Figures 1 and 2, the method flow diagram of etching liquid service life is improved for the present invention, comprising the following steps:
S10, the etching liquid groove 22 that an etching spray groove 21 is provided and is connected to the etching spray groove 21, the etching
Liquid bath 22 is equipped with etching liquid, and the etching liquid groove 22 is also connected to a filter device 23, and the filter device 23 includes an infiltration
Film 231.
Specifically, the S10 further include:
Multiple spray heads 211 are provided in the etching spray groove 21, one end of the etching liquid groove 22 and the etching are sprayed
It drenches slot 21 to be connected to, the other end of the etching liquid groove 22 is connected to the filter device 23, and the filter device 23 includes infiltration
Film 231, heater 232, etching liquid pump 233 and a drain pipe 234；Wherein, the etching liquid is dioxygen water system etching liquid；Institute
The material of permeable membrane 231 is stated as any one in cellulose acetate, aromatic polyamides and polymer compound film, the infiltration
The pore size filter range of film 231 is between 0.01 nanometer and 1000 nanometers.
S20 carries out metal ion filtering to the etching liquid in the etching liquid groove 22 using the filter device 23,
Make the concentration of metal ions in the etching liquid in predetermined use scope.
Specifically, the S20 further include:
Firstly, dense using the metal ion that the first concentration detection apparatus measures the etching liquid in the etching liquid groove 22
Degree, obtains the first test concentration of metal ions, the metal ion includes copper ion, silver ion, molybdenum ion, titanium ion and aluminium
At least one of ion, preferably copper ion；When the first test concentration of metal ions is less than 500ppm, (part per million is dense
Degree) when, the mobile permeable membrane 231, the permeable membrane are controlled by the heater 232 and the etching liquid pump 233
231 in the etching liquid groove 22 release metal ions, so that concentration of metal ions in the etching liquid groove 22 is greater than 500ppm；
When the first test concentration of metal ions is greater than 2000ppm, pass through the heater 232 and the etching liquid pump 233
The permeable membrane 231 is moved to control, the beginning of permeable membrane 231 absorbs metal ion out of described etching liquid groove 22, makes institute
The concentration of metal ions stated in etching liquid groove 22 is less than 2000ppm, finally makes the etching liquid in the etching liquid groove
Concentration of metal ions is between 500ppm to 2000ppm.The permeable membrane 231 makes the concentration of metal ions in etching liquid begin
It is maintained at reasonable range eventually, improves the service life of etching liquid, further reduced production cost.
The filtered part etching liquid is back to the etching liquid groove 22 by S30.
Specifically, the S30 further include:
The filtered part etching liquid is back to the etching liquid groove 22, finally, the plain conductor etching side
Method is used for the preparation of the array substrate using plain conductor interconnection.
As shown in Fig. 2, the present invention also provides a kind of plain conductor etching device, including etching spray groove 21, etching liquid
Slot 22 and filter device 23, one end of the etching liquid groove 22 are connected to the etching spray groove 21, the etching liquid groove 22
Opposite other end be connected to the filter device 23；Wherein, the filter device 23 includes a permeable membrane 231, the infiltration
Film 231 is used to adjust the concentration of metal ions in the etching liquid.
Specifically, when the concentration of metal ions in the etching liquid is less than 500ppm, by the permeable membrane 231 toward institute
Release metal ions in etching liquid groove 22 are stated, so that concentration of metal ions at this time is greater than 500ppm；When in the etching liquid
When concentration of metal ions is greater than 2000ppm, the beginning of permeable membrane 231 absorbs metal ion out of described etching liquid groove 22, makes
The concentration of metal ions obtained at this time is less than 2000ppm.
Specifically, the material of the permeable membrane 231 is in cellulose acetate, aromatic polyamides and polymer compound film
Any one.
Specifically, the pore size filter range of the permeable membrane 231 is between 0.01 nanometer and 1000 nanometers.
Specifically, the metal ion include in copper ion, silver ion, molybdenum ion, titanium ion and aluminium ion at least
It is a kind of.
The invention has the benefit that the method provided by the present invention for improving etching liquid service life and plain conductor are carved
Device is lost, by increasing by a permeable membrane in the cyclic process of etching liquid, so that the concentration of metal ions in etching liquid is protected always
The service life for improving etching liquid in reasonable range is held, further reduced production cost.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of method for improving etching liquid service life characterized by comprising
S10, the etching liquid groove for providing an etching spray groove and being connected to the etching spray groove, the etching liquid groove are equipped with
Etching liquid, the etching liquid groove are also connected to a filter device, and the filter device includes a permeable membrane；
S20 carries out metal ion filtering to the etching liquid in the etching liquid groove using the filter device, makes the quarter
The concentration of metal ions in liquid is lost in predetermined use scope；
The filtered part etching liquid is back to the etching liquid groove by S30.
2. the method according to claim 1 for improving etching liquid service life, which is characterized in that the material of the permeable membrane
For any one in cellulose acetate, aromatic polyamides and polymer compound film.
3. the method according to claim 1 for improving etching liquid service life, which is characterized in that the filtering of the permeable membrane
Pore diameter range is between 0.01 nanometer and 1000 nanometers.
4. the method according to claim 1 for improving etching liquid service life, which is characterized in that the step S20 is also wrapped
It includes:
S201 is measured the concentration of metal ions of the etching liquid in the etching liquid groove using the first concentration detection apparatus, obtained
To the first test concentration of metal ions；
S202, when the first test concentration of metal ions is less than 500ppm, by the permeable membrane toward the etching liquid groove
Interior release metal ions, when the first test concentration of metal ions is greater than 2000ppm, the permeable membrane started from the quarter
Lose liquid bath in absorb metal ion, finally make the concentration of metal ions of the etching liquid in the etching liquid groove between
Between 500ppm to 2000ppm.
5. the method according to claim 1 for improving etching liquid service life, which is characterized in that the etching liquid is dioxygen
Water system etching liquid.
6. a kind of plain conductor etching device, which is characterized in that including etching spray groove, etching liquid groove and filter device, institute
The one end for stating etching liquid groove is connected to the etching spray groove, and the opposite other end of the etching liquid groove and the filter device connect
It is logical；Wherein, the filter device includes a permeable membrane, and the metal ion that the permeable membrane is used to adjust in the etching liquid is dense
Degree.
7. plain conductor etching device according to claim 6, which is characterized in that the metal ion in the etching liquid
When concentration is less than 500ppm, by the permeable membrane in the etching liquid groove release metal ions so that metal at this time from
Sub- concentration is greater than 500ppm；When the concentration of metal ions in the etching liquid is greater than 2000ppm, the permeable membrane starts from institute
It states and absorbs metal ion in etching liquid groove, so that concentration of metal ions at this time is less than 2000ppm.
8. plain conductor etching device according to claim 6, which is characterized in that the material of the permeable membrane is that acetic acid is fine
Tie up any one in element, aromatic polyamides and polymer compound film.
9. plain conductor etching device according to claim 6, which is characterized in that the pore size filter range of the permeable membrane
Between 0.01 nanometer and 1000 nanometers.
10. plain conductor etching device according to claim 6, which is characterized in that the metal ion include copper ion,
At least one of silver ion, molybdenum ion, titanium ion and aluminium ion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910610959.XA CN110344058A (en) | 2019-07-08 | 2019-07-08 | Improve the method and plain conductor etching device of etching liquid service life |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910610959.XA CN110344058A (en) | 2019-07-08 | 2019-07-08 | Improve the method and plain conductor etching device of etching liquid service life |
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| Publication Number | Publication Date |
|---|---|
| CN110344058A true CN110344058A (en) | 2019-10-18 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910610959.XA Withdrawn CN110344058A (en) | 2019-07-08 | 2019-07-08 | Improve the method and plain conductor etching device of etching liquid service life |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993614A (en) * | 2019-11-27 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | Display panel preparation device and method |
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|---|---|---|---|---|
| CN1278564A (en) * | 1999-04-07 | 2001-01-03 | 希普雷公司 | Method and system for recovering and removing copper from fluid |
| CN104538335A (en) * | 2014-12-18 | 2015-04-22 | 深圳市华星光电技术有限公司 | Method for prolonging service life of etching solution and increasing yield in copper wire manufacture procedure and copper wire etching device |
| CN206955811U (en) * | 2017-05-25 | 2018-02-02 | 苏州利比奥环保科技有限公司 | A kind of effluent containing heavy metal ions processing system |
-
2019
- 2019-07-08 CN CN201910610959.XA patent/CN110344058A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1278564A (en) * | 1999-04-07 | 2001-01-03 | 希普雷公司 | Method and system for recovering and removing copper from fluid |
| CN104538335A (en) * | 2014-12-18 | 2015-04-22 | 深圳市华星光电技术有限公司 | Method for prolonging service life of etching solution and increasing yield in copper wire manufacture procedure and copper wire etching device |
| CN206955811U (en) * | 2017-05-25 | 2018-02-02 | 苏州利比奥环保科技有限公司 | A kind of effluent containing heavy metal ions processing system |
Non-Patent Citations (2)
| Title |
|---|
| 郭宇杰等: "《普通高等教育"十三五"规划教材 工业废水处理工程》", 31 October 2016, 华东理工大学出版社 * |
| 黄占斌: "《普通高等教育"十三五"规划教材 环境材料学》", 30 November 2017, 冶金工业出版社 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993614A (en) * | 2019-11-27 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | Display panel preparation device and method |
| CN110993614B (en) * | 2019-11-27 | 2022-06-10 | 深圳市华星光电半导体显示技术有限公司 | Display panel preparation device and method |
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| CB02 | Change of applicant information |
Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant after: TCL Huaxing Photoelectric Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
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Application publication date: 20191018 |
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